LIGHT EMITTING DEVICE ARRAY

Abstract

A light emitting device array is provided. The light emitting device array comprises a light emitting stack, a first electrical contact layer, an array of second electrical contacts, and an anti-reflection layer. The light emitting stack has a light emitting surface and a contact surface. The light emitting surface and the contact surface define opposing sides of the light emitting stack. The light emitting stack comprises a plurality of Group III-nitride layers including a first semiconducting layer provided towards the light emitting surface of the light emitting stack, a second semiconducting layer provided towards the contact surface, and an active layer arranged between the first semiconducting layer and the second semiconducting layer, the active layer configured to generate light having a first wavelength. The light emitting surface and the contact surface are parallel to each other and aligned with the plurality of Group III-nitride layers. The first electrical contact layer is provided on the light emitting stack and is configured to be in electrical contact with the first semiconducting layer. The array of second electrical contacts is provided on the contact surface of the light emitting stack. Each second electrical contact defines a light emitting device between the first semiconducting layer and the second electrical contact. Each of the second electrical contacts is spaced apart from the other second electrical contacts to form a two-dimensional array of light emitting devices. The anti-reflection layer is provided on the light emitting surface. The anti-reflection layer is configured to increase a light extraction efficiency of the light generated by the light emitting stack.

Claims

1. A light emitting device array comprising: a light emitting stack having a light emitting surface and a contact surface, the light emitting surface and the contact surface defining opposing sides of the light emitting stack, the light emitting stack comprising a plurality of Group III-nitride layers including a first semiconducting layer provided towards the light emitting surface of the light emitting stack, a second semiconducting layer provided towards the contact surface, and an active layer arranged between the first semiconducting layer and the second semiconducting layer, the active layer configured to generate light having a first wavelength, wherein the light emitting surface and the contact surface are parallel to each other and aligned with the plurality of Group III-nitride layers; a first electrical contact layer provided on the light emitting stack and configured to be in electrical contact with the first semiconducting layer; an array of second electrical contacts provided on the contact surface of the light emitting stack, each second electrical contact defining a light emitting device between the first semiconducting layer and the second electrical contact, wherein each of the second electrical contacts is spaced apart from the other second electrical contacts to form a two-dimensional array of the light emitting devices; and an anti-reflection layer provided on the light emitting surface, the anti-reflection layer configured to increase a light extraction efficiency of light generated by the light emitting device layer.

2. A light emitting device array according to claim 1, further comprising an absorbing layer configured to absorb light of the first wavelength generated by the active layer; the absorbing layer provided on at least a portion of the light emitting stack.

3. A light emitting device array according to claim 2, wherein the absorbing layer is provided on at least one sidewall surface of the light emitting stack extending between the light emitting surface and the contact surface.

4. A light emitting device array according to claim 2 , wherein the absorbing layer is provided on the light emitting surface, wherein the absorbing layer comprises a plurality of openings on the light emitting surface, each opening aligned with a second electrical contact such that light from each light emitting device is transmitted through a respective opening.

5. A light emitting device array according to 4 claim 2, wherein the absorbing layer is provided in regions of the contact surface between adjacent second electrical contacts of the array of second electrical contacts.

6. A light emitting device array according to claim 1, wherein the anti-reflection layer comprises a porous semiconducting layer having an areal porosity of at least 30%.

7. A light emitting device array according to claim 1, wherein the anti-reflection layer comprises a plurality of porous semiconducting sublayers, wherein the areal porosity of at least two of the plurality of porous semiconducting sublayer is different.

8. A light emitting device array according to claim 1, wherein a pitch of each second electrical contact in the light emitting device array is no greater than 5 .Math.m, or 2 .Math.m.

9. A light emitting device array according to claim 1, wherein the first electrical contact layer comprises a transparent conductive oxide provided on the light emitting surface.

10. A light emitting device array according to claim 9, wherein the anti-reflection layer is arranged between the first electrical contact layer and the light emitting surface.

11. A light emitting device array according to claim 9, wherein the first electrical contact layer is arranged between the anti-reflection layer and the light emitting surface.

12. A light emitting device array according to claim 1, wherein the anti-reflection layer and the first electrical contact layer are configured to form a graded refractive index (GRIN) structure having both anti-reflection and electrical contact functionality.

13. A light emitting device array according to claim 1, wherein the light emitting stack further comprises: a via semiconducting portion provided in the light emitting stack extending through the active layer between the first semiconducting layer and the contact surface, and the first electrical contact layer is provided on contact surface in electrical contact with the via semiconducting portion.

14. A light emitting device array according to claim 1, wherein the first semiconducting layer comprises a n-type doped Group III-nitride; and/or the second semiconducting layer comprises a p-type doped Group III-nitride; and/or the active layer comprises multiple quantum well layers comprising Group III-nitrides.

15. A light emitting device array according to claim 1, wherein the active layer extends as a continuous layer between at least two adjacent light emitting devices of the light emitting device array.

16. A method of forming a light emitting device array comprising: forming a light emitting stack on a substrate surface of a substrate, the light emitting stack having a light emitting surface orientated towards the substrate surface and a contact surface on an opposing side of the light emitting stack, forming the light emitting stack comprising forming a plurality of Group III-nitride layers including: a first semiconducting layer provided towards the substrate surface; a second semiconducting layer provided towards a contact surface of the light emitting stack; and an active layer provided between the first semiconducting layer and the second semiconducting layer, the active layer configured to generate light having a first wavelength; wherein the light emitting surface and the contact surface of the light emitting stack are formed parallel to each other and aligned with the plurality of Group III-nitride layers; forming an array of second electrical contacts on the contact surface of the light emitting stack, each second electrical contact defining a light emitting device between the first semiconducting layer and the second electrical contact, wherein each of the second electrical contacts are spaced apart from the other second electrical contacts to form a two-dimensional array of the light emitting devices; removing the substrate from the light emitting stack; forming a first electrical contact layer on the light emitting stack, the first contact layer configured to be in electrical contact with the first semiconducting layer; and forming an anti-reflection layer on the light emitting surface, the anti-reflection layer configured to increase a light extraction efficiency of light generated by the light emitting device layer.

17. A method according to claim 16, further comprising forming an absorbing layer on at least a portion of the light emitting stack, the absorbing configured to absorb light of the first wavelength generated by the active layer.

18. A method according to claim 16, wherein forming the anti-reflection layer comprises: forming a third semiconducting layer comprising a Group III-nitride and a donor density of at least 1 × 10.sup.18 cm.sup.-3 on the light emitting surface; and subjecting the third semiconducting layer to a porosity treatment process to increase an areal porosity of the third semiconducting layer to at least 30%.

19. A method according to claim 16, wherein a pitch of each second electrical contact formed in the light emitting device array is no greater than 5 .Math.m, or 2 .Math.m.

20. A method according to claim 16, wherein forming the first electrical contact layer comprises forming a transparent conductive oxide on the light emitting surface.

21. A method according to claim 20, wherein the anti-reflection layer is formed on the light emitting surface, followed by forming the first electrical contact layer on the anti-reflection layer.

22. A method according to claim 20, wherein the first electrical contact layer is formed on the light emitting surface, following by forming the anti-reflection layer on the first electrical contact layer.

23. A method according to claim 16, wherein forming the first electrical contact layer comprises: forming a via semiconducting portion in the light emitting stack extending through the active layer between the first semiconducting layer and the contact surface, and forming a first electrical contact layer on the contact surface on the via semiconducting portion.

24. A method according to claim 16, wherein forming the first semiconducting layer comprises a forming n-type doped Group III-nitride; and/or forming the second semiconducting layer comprises forming a p-type doped Group III-nitride; and/or forming the active layer comprises forming multiple quantum well layers comprising Group III-nitrides.

25. A method according to claim 16, wherein the active layer is formed as a continuous layer extending between at least two adjacent light emitting devices of the light emitting device array.

Description

BRIEF DESCRIPTION OF THE FIGURES

[0040] FIG. 1 shows a cross-sectional diagram of a light emitting device array according to an embodiment of the disclosure;

[0041] FIG. 2 shows an annotated cross-sectional diagram of the light emitting device array shown in FIG. 1;

[0042] FIG. 3 shows a graph of the absorptance of 50 nm of titanium on GaN;

[0043] FIG. 4 shows a graph of the absorptance of 50 nm of nickel on GaN;

[0044] FIG. 5a shows a diagram of a light emitting stack without an anti-reflection layer;

[0045] FIG. 5b shows a graph of the reflectance at the light emitting interface between the light emitting stack and air for different angles of incidence;

[0046] FIG. 6a shows a diagram of a light emitting stack and an anti-reflection layer;

[0047] FIG. 6b shows a graph of the reflectance of the light emitting stack and anti-reflection layer of 6a at different angles of incidence;

[0048] FIG. 7 shows a diagram of a light emitting stack with two layers formed on the light emitting surface;

[0049] FIG. 8 shows a diagram of a light emitting stack with an anti-reflection layer and a transparent conductive oxide common contact layer;

[0050] FIG. 9 shows a graph of the reflectance of the structure shown in FIG. 8;

[0051] FIG. 10 shows a diagram of a light emitting stack with a SiO.sub.2 anti-reflection layer and a transparent conductive oxide common contact layer;

[0052] FIG. 11 shows a graph of the reflectance of the structure shown in FIG. 10;

[0053] FIG. 12 shows a diagram of a light emitting stack with an anti-reflection layer comprising a plurality of sublayers and a transparent conductive oxide common contact layer;

[0054] FIG. 13 shows a graph of the reflectance of the structure shown in FIG. 12;

[0055] FIG. 14 shows a diagram of a light emitting stack with an anti-reflection layer and a transparent conductive oxide common contact layer arranged to provide a graded refractive index interface;

[0056] FIG. 15 shows a cross-sectional diagram of a light emitting device array according to a second embodiment of the disclosure;

[0057] FIG. 16 shows a cross-sectional diagram of a light emitting device array according to a third embodiment of the disclosure;

[0058] FIGS. 17a, 17b, 17c, 17d, and 17e show cross-sectional diagrams of a process flow for forming a light emitting device array according to a fourth embodiment of the disclosure;

[0059] FIG. 18 shows a plan view of a contact surface of a light emitting device array.

DETAILED DESCRIPTION

[0060] According to a first embodiment of the disclosure, a light emitting device array 1 is provided. The light emitting device array 1 comprises a light emitting stack 10, a common first contact layer 40, an array of second electrical contacts 30, an anti-reflection layer 20, and an absorbing layer 50. A cross-section of the light emitting device array 1 according to the first embodiment is shown in FIG. 1.

[0061] As shown in FIG. 1, the light emitting stack 10 has a contact surface 11 and a light emitting surface 12. The light emitting surface 12 and the contact surface 11 are (opposing) major surfaces of the light emitting stack 10. The light emitting stack 10 also includes sidewall surfaces 16 which extend from the contact surface 11 to the light emitting surface 12. The cross-section shown in FIG. 1 shows a portion of the light emitting device array 1 in a central region of the light emitting device array and a portion of the light emitting device array towards one of the sidewall surfaces 16. The light emitting surface 12 and the contact surface 11 of the light emitting stack 10 are parallel to each other. As such, the light emitting surface 12 and the contact surface 11 are substantially continuous surfaces which extend in planes parallel to each other. The parallel nature of the light emitting surface 12 and the contact surface 11 allows for light generated within the light emitting stack 10 to be totally internally reflected between the light emitting surface 12 and the contact surface 11 if the angle of incidence of the light on either the light emitting surface 12 or the contact surface 11 is greater than the critical angle.

[0062] The light emitting stack 10 comprises a plurality of Group III-nitride layers. The plurality of Group-III nitride layers are configured to provide a light emitting region within the light emitting stack 10. As shown in FIG. 1, the light emitting stack 10 comprises a first semiconducting layer 13, an active layer 14, and a second semiconducting layer 15. The active layer 14 is arranged between the first semiconducting layer 13 and the second semiconducting layer 15. As shown in the embodiment of FIG. 1, the first semiconducting layer 13, the active layer 14, and the second semiconducting layer 15 are all substantially continuous layers which are formed on top of each other. As such, the layers of the light emitting stack are generally co-planar.

[0063] In the embodiment of FIG. 1, the first semiconducting layer 13 comprises a Group III-nitride. In some embodiments, the first semiconducting layer 13 comprises GaN. In some embodiments, the first semiconducting layer 13 comprises a Group III-nitride which is doped with an n-type dopant. For example, the first semiconducting layer 13 may comprise n-type doped GaN. Any suitable n-type dopant may be used to dope the first semiconducting layer n-type, for example Si, or Ge.

[0064] The active layer 14 is configured to generate light having a first wavelength. As such, the active layer 14 is configured to provide a light generating region of the light emitting stack 10. In some embodiments, the active layer may comprise a plurality of quantum well layers. Accordingly, the active layer 14 may be configured to generate light of the first wavelength which is a wavelength of at least 400 nm. In some embodiments, the light of the first wavelength may have a wavelength of no greater than 650 nm, or no greater than 500 nm. As such, the active layer 14 of the first embodiment may be configured to generate substantially visible light.

[0065] The active layer 14 may comprise one or more quantum wells for the generation of photons. The quantum wells may be formed from a plurality of layers of Group III-nitrides with different bandgaps. In some embodiments, a Group III-nitride alloy including In may be used to form a quantum well. Multiple quantum well active layers for LEDs comprising Group-III nitrides are known to the skilled person. In some embodiments, an active layer 14 comprising alternating layers of GaN and InGaN may be provided.

[0066] The second semiconducting layer 15 may be p-type doped. As such, the second semiconducting layer 15 may comprise a p-type dopant, for example, Mg. For example, in the embodiment of FIG. 1, the second semiconducting layer comprises GaN which is p-type doped with Mg.

[0067] The first semiconducting layer 13, the active layer 14, and the second semiconducting layer 15 may be formed by any suitable process for the formation of Group III-nitrides. For example, in some embodiments the layers of the light emitting stack 10 may be formed using a metal organo chemical vapour deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, or any other suitable method. In some embodiments, for example the embodiment of FIG. 1, the layers of the light emitting stack 1 may be formed in a single deposition process as a monolithic structure. The layers of the light emitting stack 10 may be formed on a substrate (not shown). The light emitting device stack 10 may be formed on a substrate with the first semiconducting layer 13 formed first followed afterwards by the formation of the active layer 14 and subsequently the second semiconducting layer 15. Other electronics layers may also be included in the light emitting device stack (not shown). For example, an electron blocking layer or a third semiconducting layer (discussed below) may also be formed as part of the process for forming the light emitting stack 10.

[0068] As shown in FIG. 1, an anti-reflection layer 20 is formed on the light emitting surface 12 of the light emitting stack 10. The anti-reflection layer 20 is configured to reduce reflection of the light of the first wavelength at the interface between the light emitting device array and the surrounding air at the light emitting surface 12. The anti-reflection layer 20 may be provided using any suitable anti-reflection layer known to the skilled person. For example, in the embodiment of FIG. 1, the anti-reflection layer 20 comprises a material having a refractive index of no greater than the refractive index the second semiconducting layer 15 and more than the refractive index of air. The anti-reflection also has a thickness in a direction normal to the light emitting surface 12 of around one quarter of the thickness of the first wavelength.

[0069] In the embodiment of FIG. 1, the antireflection layer 20 comprises a porous semiconducting layer. The porous semiconducting layer is discussed in more detail below. The anti-reflection layer 20 is provided at the light emitting surface 12 in order to increase the light extraction efficiency of light which is incident on the light emitting surface 12 at an angle of incidence which is less than the critical angle (θ.sub.c).

[0070] As shown in FIG. 1 the light emitting device array 1 comprises an array of second electrical contacts 30. The array of second electrical contacts 30 are provided on the contact surface 11 of the light emitting stack 10. Each second electrical contact 30 defines a light emitting device between the first semiconducting layer 13 and the respective second electrical contact 30. As shown in FIG. 1, the second electrical contacts 30 are spaced apart from each other in order to form an array of second electrical contacts 30. Consequently, as each second electrical contact 30 defines a light emitting device, the array of second electrical contacts 30 defines the arrangement of the light emitting devices in the light emitting device array. Each second electrical contact 30 allows the respective light emitting device to be controlled independently of the other light emitting devices. Application of a voltage to the second electrical contacts provides a localised electrical field between the third electrical contact and the first semiconducting layer 13 which causes the active layer 14 to generate light.

[0071] The generation of light in the active layer 14 is localised in regions of the active layer which overlap with the second electrical contacts 30. As such, the active layer 14 comprises a plurality of light generating regions. Each light generating region is aligned with a respective second electrical contact. Each light generating region is generally of a similar cross sectional area in a plane parallel to the light emitting surface 12 as the respective second electrical contact 30.

[0072] Each light generating region of the active layer 14 generates light which is emitted in all directions. A portion of the light generated by each light generating region will be transmitted in a direction normal to the active layer 14 towards the light emitting surface 12. As shown in FIG. 2, light which is incident on the light emitting surface 12 at an angle to the normal of less than the critical angle (θ.sub.1 < θ.sub.c) will be at least partially transmitted through the light emitting surface 12. For example, light generated by the active layer 14 in a direction normal to the active layer 14 will be generally transmitted through the light emitting surface 12. Light which is incident on the light emitting surface 12 at an angle greater than or equal to the critical angle θ.sub.c will be totally internally reflected within the light emitting stack 10. As such, light which is incident on the light emitting surface 12 at an angle to the normal of at least the critical angle will not be transmitted through the light emitting surface 12. Accordingly, total internal reflection and the critical angle are used in the light emitting device array 1 to restrict the light emitted from the light emitting device to a subset of angles of emission.

[0073] The second electrical contacts 30 may comprise any suitable material for forming an Ohmic contact to the second semiconducting layer 15. For example, in some embodiments the second electrical contacts 30 may comprise one or more metal layers, for example gold, nickel, or titanium. The second electrical contacts 30 may be arranged on the contact surface 11 as a two-dimensional array. In some embodiments, the second electrical contacts 30 may be arranged as a square-packed array, or as a hexagonally-packed array. In the first embodiment, the second electrical contacts 30 are regularly spaced apart from each other in order to define an array of light emitting devices. The second electrical contacts 30 are spaced apart from each other in order to allow the individual light emitting devices to be controlled independently from each other.

[0074] In embodiments of this disclosure, the second electrical contacts 30 are spaced apart from each in order to provide an array of light emitting devices having a pitch. The pitch of the light emitting device array 1 in this disclosure refers to the centre-to-centre spacing of adjacent second electrical contacts 30. Moreover, the pitch refers to the smallest value for the centre-to-centre spacing between adjacent second electrical contacts in the array of second electrical contacts 30. That is to say, for example in a square-packed array, the pitch refers to the centre-to-centre spacing between adjacent second electrical contacts in the rows and/or columns, rather than along a diagonal direction. In some embodiments, a pitch of each second electrical contact in the light emitting device array may be no greater than 5 .Math.m, or no greater than 2 .Math.m. Accordingly, the pitches of each second electrical contact may define an array of micro light emitting devices wherein the pitch of each microlight emitting device is no greater than 5 .Math.m or 2 .Math.m.

[0075] For a given light emitting device pitch, a first portion of the light emitting device pitch may be taken up by the second electrical contacts 30. A second portion of the light emitting device pitch may be dedicated to the spacing between adjacent second electrical contacts 30. In some embodiments, the spacing to be provided between adjacent second electrical contacts may be at least 500 nm. The amount of spacing provided between adjacent second electrical contacts 30 may not significantly vary as the size of the light emitting device pitch is increased. Thus, as the device size increases, the fraction of the light emitting device pitch which is used for device spacing, rather than the second electrical contact may decrease.

[0076] As shown in FIG. 1, a common first contact layer 40 is provided on the light emitting surface 12. In the embodiment of FIG. 1, the common first contact layer 40 is provided covering the light emitting surface 12 of the light emitting stack 10 and the anti-reflection layer 20. As such, the anti-reflection layer 20 is provided between the light emitting stack 10 and the common first contact layer 40. In some embodiments, the anti-reflection layer 20 and the common first contact layer may be provided in the opposite arrangement (i.e. the common first contact layer 40 provided between the light emitting stack 10 and the anti-reflection layer 20).

[0077] In the embodiment of FIG. 1, the common first contact layer 40 comprises a transparent conductive oxide. The transparent conductive oxide is configured to be generally transparent to the first wavelength, and also to form an Ohmic contact to the first semiconducting layer 13 via the anti-reflection layer 20. For example, in some embodiments, the transparent conductive oxide may have a transmittance of at least 90% for light of the first wavelength.

[0078] As shown in FIG. 1, the common first contact layer 40 is provided as a substantially continuous layer across the light emitting surface 12. The common first contact layer 40 provides a first contact for each of the light emitting devices of the light emitting device array 1. As such, the light emitting device array 1 of the first embodiment efficiently provides a common first contact layer for the devices of the light emitting device array in a self-aligned processing step.

[0079] As shown in FIG. 2, as light from the active layer travels from the light emitting stack through the light emitting surface 12 to the surrounding environment, the light is refracted. The refraction of light at the causes the angle of emission to the normal (θ.sub.2 in FIG. 2) to increase as it is output from the device. Such refraction further reduces the appearance of cross-talk between adjacent light emitting devices. A person observing the light emitting device array 1 (e.g. as indicated in FIG. 2) receives light from each light emitting device in a relatively narrow viewing angle. Light which is generated at angles of incidence approaching the critical angle is refracted such that a viewer may not observe this light. As such, the appearance of cross-talk between light emitting devices is reduced or eliminated.

[0080] The light emitting device array 1 of the first embodiment also comprises an absorbing layer 50. The absorbing layer 50 is configured to absorb light of the first wavelength generated by the active layer 14. The absorbing layer 50 may be provided on the light emitting stack 10 to cover regions of the light emitting stack where emission of the light of the first wavelength is undesirable. The absorbing layer 50 also to provide a means for absorbing light within the light emitting stack 10 which is totally internally reflected.

[0081] In the embodiment of FIG. 1, the absorbing layer 50 is provided on at least one of the sidewall surfaces 16 of the light emitting stack 10. The absorbing layer 50 may be provided as a substantially continuous layer on the sidewall surface 16. As shown in FIG. 1, a first portion of the absorbing layer 51 covers substantially the entire sidewall surface 16 of the light emitting stack 10.

[0082] The absorbing layer 50 may also be provided on other surfaces of the light emitting stack 10, for example around the perimeter of the light emitting surface 12. As shown in FIG. 1, a second portion of the absorbing layer 52 is provided around a perimeter of the light emitting surface 12 in order to define an edge region of the light emitting surface 12. The second portion of the absorbing layer 52 provided on the perimeter of the light emitting surface 12 may help reduce to eliminate unwanted optical effects due to the presence of the sidewall surfaces of the light emitting stack 10.

[0083] The absorbing layer 50 may comprise any suitable material configured to absorb light of the first wavelength. In the embodiment of FIG. 1 where the active layer 14 is configured to emit light having a first wavelength of between 440 nm and 500 nm, the absorbing layer 50 may comprise a layer of a metal such as Ni or Ti. FIG. 3a shows an absorptance plot for an absorbing layer comprising a 50 nm layer of Ti on a GaN substrate (a diagram of which is shown in FIG. 3b). FIG. 3 shows absorptance graph for a 50 nm layer of Ni on a GaN substrate. As such, it will be appreciated that metallic thin films (e.g. having a thickness of less than 500 nm) may be used to provide a suitable absorbing layer.

[0084] As discussed above, the anti-reflection layer 20 may comprise a porous semiconducting layer. The porous semiconducting layer will now be discussed with reference to FIGS. 5a, 5b, 6a and 6b.

[0085] FIG. 5a shows a schematic diagram of a light emitting stack 10 without an anti-reflection layer provided on the light emitting surface 12. As such, the light emitting surface 12 is an interface between the first semiconducting layer 13, which comprises n-type doped GaN, and air. As shown in FIG. 5a, light, which is incident on the light emitting surface 12 from the active layer 14, is either partially transmitted through the light emitting surface 12 if the angle of incidence is less than the critical angle (i.e. some of the light may be reflected), or totally internally reflected if the angle of the incidence is greater than the critical angle.

[0086] FIG. 5b shows a plot of the reflectance for light of different wavelengths at the interface between the first semiconducting layer 13 and air. FIG. 5b shows the reflectance for light which is incident on the light emitting surface at an angle a) normal to the light emitting surface 12, b) incident at 20 degrees to the normal, and c) incident at 24 degrees to the normal. It will be appreciated from FIG. 5b, that the interface between the light emitting stack 10 and air may be highly reflective for light which is normally incident to the light emitting surface or angles close to the normal incidents. The reflectance for light having a wavelength of around 450 nm increases from just below 0.2 to 1.0 as the angle of incidence approaches the critical angle. For n-type doped GaN, the critical angle is around 24 degrees. Angles of incidence above 24 degrees will result in total internal reflection of the light.

[0087] FIG. 6a shows a schematic diagram for a light emitting stack 10 with an anti-reflection layer 20 provided on the light emitting surface 12. The anti-reflection layer 20 comprises n-type doped GaN which has been subjected to a porosity treatment process in order to increase the areal porosity of the GaN to at least 30%. The porosity treatment process is discussed in more detail below. In the schematic diagram of FIG. 6a, the areal porosity of the GaN is around 70%.

[0088] FIG. 6b shows a graph of the reflectance between the light emitting stack and air for the structure of FIG. 6a including the porous semiconducting layer. As shown in FIG. 6b, for light which is incident at the light emitting surface 12 in a direction generally normal to the light emitting surface 12 the reflectance for all wavelengths within the range 400 nm to 700 nm is less than 0.1. As the angle of incidence increases to 20 degrees, the reflectance remains less than 0.1. Thus, the anti-reflection layer 20 may be used to significantly reduce the reflection of light at angles of incidence which will be emitted from the light emitting device array at an emission angle suitable for observation by a viewer. As shown in FIG. 6b as the angle of incidence is increased to 24 degrees, the reflectance at the interface increases significantly to above 0.8. Of course, it will be appreciated from the information accompanying FIG. 2 that wider angles of incidence are unlikely to result in the emission of observable light due to the refraction occurring at the light emitting surface 12. Thus, the reflection at angles of incidence above 20° does not impact on the output of observable light by the light emitting device array 1.

[0089] As shown in FIG. 6a, the thickness of the anti-reflection layer 20 is selected in order to provide a quarter wavelength anti-reflection layer 20. As such, the thickness of the anti-reflection layer is selected to be λ.sub.0 /4 n.sub.p, where n.sub.p is the refractive index of the anti-reflection layer 20 at λ.sub.0. In embodiments where the anti-reflection layer 20 is provided by a porous semiconducting layer, the refractive index of the porous semiconducting layer n.sub.p, may depend upon the porosity of the porous semiconducting layer. In general, as the porosity of the porous semiconducting layer is increased, the refractive index of the porous semiconducting layer may be reduced. For example, in some embodiments where the porous semiconducting layer comprises GaN the following relationship between the areal porosity and the refractive index may be found in Table 1 below.

TABLE-US-00001 Porosity n.sub.p@ 450 nm 0% 2.44 10.0% 2.34 20.0% 2.23 30.0% 2.12 40.0% 2.00 50.0% 1.87 60.0% 1.73 70.0% 1.58 80.0% 1.41 90.0% 1.22

[0090] As such, the thickness of the porous semiconducting layer acting as an anti-reflection layer 20 will be dependent on the wavelength of the first wavelength, and also the porosity of the semiconducting layer. In some embodiments, a porous semiconducting layer having an areal porosity of at least 60% and/or no greater than an areal porosity of 80% may be selected such that the refractive index is around x-y. In the embodiment shown in FIG. 6a the porous semiconducting layer has an areal porosity of 70%.

[0091] In some embodiments, the anti-reflection layer may 20 be provided by a stack of porous semiconducting sublayers. The stack of porous semiconducting sublayers may have different porosities, such that the refractive index through the anti-reflection layer 20 varies. Each porous semiconducting sublayer is formed form a corresponding third semiconducting sublayer by subject the semiconducting sublayer to a porosity treatment process. The (areal) porosity of a semiconducting sublayer may be controlled through control of the doping density of the respective third semiconducting sublayer, as discussed in more detail below. The porosity of each porous semiconducting sublayer may be selected to provide each porous semiconducting sublayer with a desired refractive index. Further, the thickness (in a direction normal to the light emitting surface 12) of each porous semiconducting sublayer, and the number of porous semiconducting sublayers, may each be selected to provide an antireflection layer 20 with the desired optical properties.

[0092] By forming the anti-reflection layer 20 from a porous semiconducting layer it is possible to form the precursor material to the porous semiconducting layer as part of the process of forming the light emitting stack 10. As such, a method of forming the light emitting device array 1 may include forming a third semiconducting layer on the light emitting surface 12. The third semiconducting layer comprises a Group-III nitride and has a donor density of at least 1 × 10.sup.18 cm.sup.-3. As such, the third semiconducting layer is a relatively highly doped Group-III nitride semiconductor. The third semiconducting layer may be doped to have a higher doping concentration than the first semiconducting layer such that a subsequent porosity treatment process selectively affects the third semiconducting layer and not the first semiconducting layer 13 in order to provide a distinct boundary between the anti-reflection layer 20 and the first semiconducting layer 13. For example, in the first embodiment, the first semiconducting layer 13 has a n-type doping density of at least 1 × 10.sup.17 cm.sup.-3 and no greater than 1 × 10.sup.18 cm.sup.-3, and the third semiconducting layer is formed with a n-type doping density of at least 1 × 10.sup.18 cm.sup.-3, preferably at least 5 × 10.sup.18 cm.sup.-3.

[0093] In the embodiment of FIG. 1, the anti-reflection layer 20 is configured to account for the presence of the common first contact layer 40, which in FIG. 1 is provided by a transparent conductive oxide layer. FIG. 7 shows a diagram of a light emitting stack with 10 with two layers provided on the light emitting surface 12. For example, in accordance with the first embodiment of the disclosure, the two layers may be the anti-reflection layer 20 and the common first contact layer 40 which comprises a transparent conductive oxide.

[0094] Next, the design of the antireflection layer 20 will be discussed for embodiments where two layer are present on the light emitting surface (such as in the first embodiment). As shown in FIG. 7, a third refractive index of the first semiconducting layer 13 is n.sub.3, a second refractive index of the first layer provided on the light emitting surface 12 (e.g. the anti-reflection layer 20) is n.sub.2, and a first refractive index of the second layer (e.g. the transparent conductive oxide layer) provided on the first layer is n.sub.1. The first layer (e.g. the antireflection layer 20) has a thickness in the direction normal to the light emitting surface 12 of t.sub.2. The second layer (e.g. the transparent conductive oxide layer) has a thickness t.sub.1 in the direction normal to the light emitting surface 12.

[0095] Given the arrangement shown in FIG. 7, the following parameters may be defined, where λ is the wavelength of light emitted by the active layer 14:

[00001] $r_{1} = \frac{n_{0} - n_{1}}{n_{0} + n_{1}}$

[00002] $r_{2} = \frac{n_{1} - n_{2}}{n_{1} + n_{2}}$

[00003] $r_{3} = \frac{n_{2} - n_{3}}{n_{2} + n_{3}}$

[00004] $θ_{1} = \frac{2 π n_{1} t_{1}}{λ}$

[00005] $θ_{2} = \frac{2 π n_{2} t_{2}}{λ}$

[0096] Accordingly, the reflectivity (R) of the two-layer coating on the light emitting surface 12 for light of a wavelength λat normal incidence to the light emitting surface may be calculated as:

[00006] $R = |r^{2}| = \frac{M}{N}$

Where:

[00007] $\begin{array}{l} {M=r}_{1}^{2} + r_{2}^{2} + r_{3}^{2} + r_{1}^{2} r_{2}^{2} r_{3}^{2} + 2 r_{1} r_{2} (1 + r_{3}^{2}) \cos 2 θ_{1} - \\ 2 r_{2} r_{3} (1 + r_{1}^{2}) \cos 2 θ_{2} + 2 r_{2} r_{3} \cos 2 (θ_{1} - θ_{2}) - 2 r_{1} r_{2}^{2} r_{3} \cos 2 (θ_{1} - θ_{2}) \end{array}$

[00008] $\begin{array}{l} {N=1+r}_{1}^{2} r_{2}^{2} + r_{1}^{2} r_{3}^{2} + r_{2}^{2} r_{3}^{2} + 2 r_{1} r_{2} (1 + r_{3}^{2}) \cos 2 θ_{1} - \\ 2 r_{2} r_{3} (1 + r_{1}^{2}) \cos 2 θ + 2 r_{1} r_{3} \cos 2 (θ_{1} - θ_{2}) - 2 r_{1} r_{2}^{2} r_{3} \cos 2 (θ_{1} - θ_{2}) \end{array}$

Using the above equation, the anti-reflection layer 20 may be configured to reduce reflection of light of the first wavelength at the interface between the light emitting surface 12 light emitting stack 10 and the surroundings (i.e. air).

[0097] Some possible examples of the anti-reflection layer 20 and the common first contact layer 40 will now be described with reference to FIGS. 8 to 13. In FIG. 8, a diagram of a light emitting stack 10 with an anti-reflection layer 20 and a common first contact layer 40 comprising ITO is shown. In the example of FIG. 8, the ITO layer has a thickness t.sub.1 of 210 nm and a refractive index n.sub.1 of 2.03 at 455 nm. In accordance with the calculation set out above, the anti-reflection layer 20 is provided by a 70 % areal porosity porous semiconducting layer (n.sub.2 = 1.58 at 450 nm) having a thickness t.sub.2 of 100 nm. Such an anti-reflection layer 20 provides a reflectance R of about 0 for light of a wavelength λ= 455 nm. A graph of the reflectance of the structure shown in FIG. 8 is shown in FIG. 9.

[0098] As discussed above, the anti-reflection layer 20 and the common first contact layer 40 may both be provided on the light emitting surface 12. In the first embodiment, the anti-reflection layer 20 is provided directly in contact with the light emitting surface 12 of the light emitting stack 12, such that the anti-reflection layer 20 is provided between the light emitting stack 10 and the common first contact layer 40. In some embodiments, the common first contact layer 40 and the anti-reflection layer 20 may be provided in the opposite arrangement. For example, as shown in FIG. 10, the common first contact layer 40 is provided directly in contact with the light emitting surface 12 of the light emitting stack 10. The anti-reflection layer 20 is provided on the first contact layer 40. As such, the first contact layer 40 is provided between the light emitting stack 10 and the anti-reflection layer 20.

[0099] In the example of FIG. 10, the ITO layer has a thickness t.sub.2 of 250 nm and a refractive index n.sub.2 of 2.03 at 455 nm. In accordance with the calculation set out above, the anti-reflection layer 20 is provided by a SiO.sub.2 layer (n.sub.1 = 1.47 at 455 nm) having a thickness t.sub.1 of 65 nm. Such an anti-reflection layer 20 provides a reflectance R of about 0 for light of a wavelength λ= 455 nm. A graph of the reflectance of the structure shown in FIG. 10 is shown in FIG. 11.

[0100] In some embodiments, the anti-reflection layer 20 may comprise a plurality of anti-reflection sublayers 22, 24, 26. An example of such an anti-reflection layer 20 is shown in FIG. 12. As shown in FIG. 12, the anti-reflection layer 20 comprises a first anti-reflection sublayer 22, a second anti-reflection sublayer 24, and a third anti-reflection sublayer 26. The anti-reflection sublayers are arranged sequentially from the light emitting surface 12. The plurality of anti-reflection sublayers 22, 24, 26, provide an anti-reflection layer 20 with a graded refractive index. As such, the refractive index of the anti-reflection layer 20 is graded such that it decreases in the direction normal to the light emitting surface 12. The decrease in refractive index is achieved by varying the porosity of the anti-reflection sublayers. In the embodiment of FIG. 12, the refractive index decreases from 2.23 (20% porosity) to 1.58 (70% porosity). The refractive index decreases in a step-wise manner due to the plurality of anti-reflection sublayers 22, 24, 26. In other embodiments, a graded refractive index may be provided by smoothly varying the porosity of the anti-reflection layer 20. Other possible variations in refractive index may also be provided, for example an increase in refractive index, alternating values of refractive index or any combination of increases and decreases.

[0101] In the example of FIG. 12, the ITO layer has a thickness t.sub.1 of 210 nm and a refractive index n.sub.1 of 2.03 at 455 nm The first anti-reflection sublayer 22 is a porous semiconducting layer having an areal porosity of 20% (n = 2.23) and a thickness of 50 nm. The second anti-reflection sublayer 24 is a porous semiconducting layer having an areal porosity of 40 % (n = 2.00) and a thickness of 50 nm, The third anti-reflection sublayer 26 is a porous semiconducting layer having an areal porosity of 70 % (n = 2.23) and a thickness of 60 nm. Such an anti-reflection layer 20 provides a reflectance R of about 0 for light of a wavelength λ= 455 nm. A graph of the reflectance of the structure shown in FIG. 12 is shown in FIG. 13.

[0102] It will be appreciated from the examples of FIG. 8 and FIG. 10 that the relative positions of the anti-reflection layer 20 and the common first contact layer 40 may be swapped. It will also be appreciated from the example of FIG. 12 that a layer having a graded refractive index may be provided on the light emitting surface 12 in order to provide the desired optical properties. Following on from these concepts, FIG. 14 shows an example where the anti-reflection layer 20 and the common first contact layer 40 form a graded refractive index (GRIN) structure 28 having both anti-reflection and electrical contact functionality. In the example of FIG. 14, the GRIN structure 28 comprises a plurality of layers. At least one of the plurality of layers provides the common first contact layer 40, whilst at least one other layer provides the anti-reflection layer 20. In the GRIN structure 28, each of the plurality of layers comprises the same transparent conductive oxide, for example ITO. The plurality of layers are formed in order to provide a graded refractive index, similar to the example of FIG. 12. As such, the plurality of layers are formed in order to provide a variable refractive index which decreases towards 1 in a direction normal to the light emitting surface.

[0103] The refractive index of the transparent conductive oxide may be varied through variation in the porosity of the transparent conductive oxide. One known method for varying the porosity of a transparent conductive oxide, such as ITO, is oblique-angle deposition using electron-beam evaporation. By varying the angle of the deposition surface relative to the vapour flu deposition, the amount of shadow cast by as-deposited material may be controlled, thereby controlling the porosity of the as-formed layer. Further explanation of oblique angle deposition for ITO may be found in at least “Light-Extraction Enhancement of GaInN Light Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact”, Jong Kyu Kim et. al., Advanced Materials, 0000, 00, 1-5.

[0104] In the example of FIG. 14 the GRIN structure 28 comprises 6 different layers. Each layer comprises ITO having a different refractive index. The refractive index of the 6 layers may vary from around 2.2 at the light emitting surface, to around 1.2 at the interface with free space. For example, the refractive index of the 6 different layers may be selected to be 2.2, 2.0, 1.8, 1.5, 1.3 and 1.2. Of course, the thicknesses and the refractive index of the GRIN structure 28 may be varied depending on the first wavelength of light emitting by the active region 14.

[0105] Next, a method of forming a light emitting device array 1 according to the first embodiment will be described. The method comprises forming a light emitting stack 10 on a substrate surface of a substrate. The substrate may be any substrate suitable for the formation of Group-III nitrides. For example, the substrate may comprise a Si wafer, or a Sapphire wafer.

[0106] The light emitting stack 10 is formed such that a light emitting surface 12 of the light emitting stack 10 is orientated towards the substrate surface. A contact surface 11 of the light emitting stack 10 is provided on an opposing side of the light emitting stack 10. As such, the contact surface 11 is orientated away from the substrate surface (relative to the light emitting surface 12).

[0107] Forming the light emitting stack 10 comprises forming a plurality of Group-III nitride layers on the substrate surface. The layers of the light emitting stack 10 include a first semiconducting layer 13, an active layer 14, and a second semiconducting layer 15. The first semiconducting layer 13, the active layer 14 and the second semiconducting layer 15 are formed sequentially such that the active layer 14 is provided between the first semiconducting layer 13 and the second semiconducting layer 15. As discussed above, the first semiconducting layer 13, the second semiconducting layer 15 and the active layer 14 may be formed using an MOCVD process or a MBE process as discussed above. As discussed in relation to the first embodiment and FIG. 1 above, the light emitting surface and the contact surface 11 of the light emitting stack 10 are formed such that they are parallel to each other and aligned with the plurality of Group-III nitride layers.

[0108] Following the formation of the light emitting stack 10, an array of second electrical contacts 30 are formed on the contact surface 11 of the light emitting stack 10. Each second electrical contact 30 defines a light emitting device between the first semiconducting layer 13 and the second electrical contact 30. Each of the second electrical contacts 30 are spaced apart from the other second electrical contacts 30 to form a two-dimensional array of light emitting devices. The second electrical contacts 30 may be formed as discussed in more detail above.

[0109] Following the formation of the second electrical contacts 30 the substrate may be removed from the light emitting stack. Following the removal of the substrate, a common first contact layer 40 may then be formed on the light emitting stack 10. For example, in the first embodiment, the common first contact layer 40 may be formed as a transparent conductive oxide over the light emitting surface 12 of the light emitting stack 10. The common first contact layer 40 is configured to be in electrical contact with the first semiconducting layer 13 of the light emitting stack 10.

[0110] An anti-reflection layer 20 is also formed on the light emitting surface 12. The anti-reflection layer 20 may, in some embodiments, be formed on the light emitting surface 12 following the removal of the substrate. The anti-reflection layer 20 may be formed on the light emitting surface 12 prior to the formation of the common first contact layer 40. In other embodiments, for example as shown in FIG. 10, the anti-reflection layer 20 may be formed on the common first contact layer 40. In some embodiments, the anti-reflection layer 20 may comprise a porous semiconducting layer. In other embodiments, the anti-reflection layer may comprise SiO.sub.2, or ITO, or any other material with a suitable refractive index.

[0111] In some embodiments the anti-reflection layer comprises a porous semiconducting layer. Such an anti-reflection layer 20 may be formed by forming a third semiconducting layer on the substrate surface of the substrate prior to the formation of the light emitting stack 10. The third semiconducting layer may comprise a Group III-nitride, for example GaN, which is doped with an n-type dopant. In some embodiments, the third semiconducting layer is formed from the same Group III-nitride as the first semiconducting layer 13, wherein the doping density of the third semiconducting layer is varied relative to the first semiconducting layer 13. The light emitting stack 10 is then formed on the exposed surface of the third semiconducting layer as described above. Following the removal of the substrate as part of the method of forming the light emitting device array 1, the third semiconducting layer may then be subjected to a porosity treatment process in order to form the anti-reflection layer 20 as a porous semiconducting layer. As such, it will be appreciated that the formation of the anti-reflection layer 20 may be integrated into the process for forming the Group-III nitride layers forming the light emitting stack 10. As such, the formation of the anti-reflection layer 20 may be integrated as part of an alignment-free process for forming the Group-III nitride layers of the light emitting device array 1.

[0112] As discussed above, the anti-reflection layer 20 may be provided by a porous semiconducting layer. The porous semiconducting layer may be formed by subjecting a third semiconducting layer to a porosity treatment process. The porosity treatment process may be performed following the formation of the light emitting stack 10. The porosity treatment process is configured to increase the porosity (areal porosity) of the third semiconducting layer. Methods for increasing the porosity of a Group III-nitride layer are known to the skilled person. For example, “In-plane bandgap control in porous GaN through electroless wet chemical etching”, Xiuling Li, Young Woon-Kim et al., Applied Physics Letters, Vol. 8, no. 6, 11 Feb. 2002, describes several processes for increasing the porosity of an n-type doped Group III-nitride layer.

[0113] For example, the porosity treatment process may comprise subjecting the third semiconducting layer (and the layers of the light emitting stack 10) to an electrochemical treatment process. The electrochemical treatment process may comprise submerging the third semiconducting layer in a bath of oxalic acid. Electrical connections are made between the bath of oxalic acid and the third semiconducting layer. An electric current is passed between the electrical contacts of the oxalic acid bath and the third semiconducting layer in order to electrochemically form pores within the third semiconducting layer. In some embodiments, the oxalic acid baths comprises an oxalic acid solution having a concentration of between 0.03 M and 0.3 M. In other embodiments, the oxalic acid bath may be substituted for other electrolytes such as KOH or HCl. The level of electrical bias applied to the electrochemical process will depend on the electrochemical solution used and the relative dimensions of the bath and the third semiconducting layer/light emitting stack 10. Further examples of porosity treatments are described in ACS Applied Nano Materials, 2020, 3, 399-402 and US 2017/0237234.

[0114] The porosity treatment process results in the formation, or an increase in the size of, pores present in the third semiconducting layer. The porosity of the third semiconducting layer may be characterised by an areal porosity. Areal porosity is the area fraction of pores present in a cross-section through the material (i.e. through the third semiconducting layer). In some embodiments, the porous semiconducting layer has an areal porosity of at least 30%. In some embodiments, the porous semiconducting layer has an areal porosity of at least 40%. In some embodiments, the porous semiconducting layer 14′ has an areal porosity of no greater than 80%. By providing the porous semiconducting layer with such an areal porosity, the third semiconducting have a refractive index which is suitable for forming an antireflection layer 20.

[0115] In some embodiments, the method may also further comprise forming an absorbing layer 50 on at least a portion of the light emitting stack 10. The absorbing layer 50 may be formed on the sidewall surfaces of the light emitting stack.

[0116] Accordingly, it will be appreciated that the method described above may be used to provide a light emitting device array 1 in accordance with the first embodiment of the disclosure.

[0117] Next, a light emitting device array 2 according to a second embodiment of the disclosure will be described.

[0118] The light emitting device array 2 according to the second embodiment of the disclosure comprises a light emitting stack 10, an anti-reflection layer 20, an array of second electrical contacts 30, and a common first contact layer 40. These features are similar to the features described above in relation to the first embodiment. An example of a cross-section of a light emitting device array 2 according to a second embodiment of the disclosure is shown in FIG. 15.

[0119] As shown in FIG. 15, the light emitting device array 2 comprises an absorbing layer 50. The absorbing layer 50 comprises a first portion 51 which covers substantially the entire sidewall surface 16 of the light emitting stack 10 in a manner similar to that described for the first embodiment. A second portion of the absorbing layer 52 may also be provided around the perimeter of the light emitting surface 12 in a manner similar to the first embodiment.

[0120] In the second embodiment of the disclosure, a third portion of the absorbing layer 53 is provided on the contact surface 11. The third portion of the absorbing layer 53 is provided in regions of the contact surface 11 between adjacent second electrical contacts of the array of second electrical contacts 30. As shown in FIG. 15, the third portion of the absorbing layer 53 may be spaced apart from the second electrical contacts 30 in order to prevent shorting between the second electrical contacts 30. The third portions of the absorbing layer 53 provide additional absorbing regions for light generated in the active layer. The third portions of the absorbing layer 53 may be provided to absorb light which has been reflected from the light emitting surface 12 at an angle less than the critical angle or light which has been generated in the active layer 14 which is directly incident on the contact surface 11. By absorbing such stray light, the possibility of the stray light being reflected towards the light emitting surface 12 and possibly emitted is reduced, thereby further reducing any appearance of cross talk between adjacent light emitting devices 1.

[0121] The third portions 53 of the absorbing layer 50 may be formed in a similar manner to the first and second portions of the absorbing layer 50. The third portions of the absorbing layer 53 may be formed using any suitable patenting technique such as lithography. The third portions of the absorbing layer may be formed either before the formation of the second electrical contacts 30 or after the formation of the second electrical contacts 30. In some embodiments, the third portions of the absorbing layer 53 effectively define a grid comprising a plurality of openings in which the second electrical contacts 30 are provided. As the formation of such a grid may require an additional patenting step in some embodiments, the third portions of the absorbing layer 53 may not be provided.

[0122] Next, a third embodiment of the light emitting device array 3 will be described. A cross-sectional diagram of a third embodiment of the light emitting device array 3 is shown in FIG. 16. As shown in FIG. 16, the light emitting device array 3 comprises a light emitting stack 10, an anti-reflection layer 20, an array of second electrical contacts 30, a common first contact layer 40, and an absorbing layer 50. Similar to the second embodiment, the absorbing layer 50 comprises a first portion 51, a second portion 52, and a third portion 53.

[0123] In the third embodiment of the light emitting device array 3, the absorbing layer 50 also comprises a fourth portion 54. The fourth portion of the absorbing layer 54 is provided on the light emitting surface 12 as a generally continuous layer comprising a plurality of openings through a thickness of the fourth portion of the absorbing layer 54. Each opening through the fourth portion of the absorbing layer 54 is aligned with a second electrical contact such that light from each light emitting device travelling in a direction generally normal to the light emitting surface can travel through a respective opening. As shown in FIG. 16, the fourth portions of the absorbing layer 54 on the light emitting surface 12 are generally aligned with the third portions 53 of the absorbing layer provided on the contact surface 11. As such, the openings provided by the fourth portion of the absorbing layer 54 may be similar to the openings provided by the grid of the third portions of the absorbing layer 53 for the second electrical contacts 30. In some embodiments, the grid formed by the third portions of the absorbing layer 53 may be the same as the grid formed by the fourth portions of the absorbing layer 54. That is to say, in some embodiments the same mask pattern may be used to form the third and fourth portions 53, 54 of the absorbing layer 50. Of course, in other embodiments the third portion of the absorbing layer 53 and the fourth portion of the absorbing layer 54 may be formed using different patterns.

[0124] The fourth portion of the absorbing layer 54 is provided on the light emitting surface 12 in order to define a plurality of openings through which light may be emitted. Light is not emitting from the light emitting surface 12 in regions covered by the fourth portions of the absorbing layer 54. As such, the fourth portions of the absorbing layer 54 may be provided to further reduce and/or eliminate cross talk between adjacent light emitting devices.

[0125] As discussed above, the second and third embodiments of the disclosure have absorbing layers 20 and common first contact layers 40 which are similar to those described for the first embodiment. It will be appreciated that in other embodiments of the disclosure, other absorbing layers 20 and other first electrical contact layers may be provided. For example, the skilled person will appreciate that the second and third embodiments may be combined with any of the absorbing layers 20 and common first contact layers 40 discussed above in relation to FIGS. 7 to 14.

[0126] Next, a fourth embodiment of the light emitting device array 4 will be described with reference to FIGS. 17a, 17b, 9c, 17d and 17e. In the first, second and third embodiments of the disclosure, the common first contact layer 40 is provided using a transparent conductive oxide, provided on the light emitting surface 12 of the light emitting stack 10. According to the fourth embodiment of the disclosure the common first contact layer 40 may also be provided using an electrical contact located from the contact surface side of the light emitting stack 10. Such a process allows both the first and second electrical contacts for the light emitting device array 4 to be located on the same surface (i.e. the contact surface 11) such that the light emitting device array 4 may be more easily connected to control electronics. For example, the light emitting device array 4 of the fourth embodiment may be bonded to a back plane electronics array using a suitable bonding technology.

[0127] FIGS. 17a through 17e shown a process for forming a common first electrical contact on the contact surface 11 of the light emitting stack 10. For simplicity, the other layers of the light emitting device array 4 are not shown, but it will be appreciated that they may be formed by any of the methods described above in relation to the first, second and third embodiments of the disclosure.

[0128] As shown in FIG. 17a, a light emitting stack 10 is provided. The light emitting stack 10 may be formed on a substrate in a manner similar to the embodiments described above. The light emitting stack 10 comprises a first semiconducting layer 13, an active layer 14, and a second semiconducting layer 15. In order to form an electrical connection between the contact surface 11 and the first semiconducting layer 13, a via semiconducting portion 61 is provided in the light emitting stack 10 which extends through the active layer 14 between the first semiconducting layer 13 and the contact surface 11. A first electrical contact portion 41 is then provided on the contact surface 11 which is aligned with the via semiconducting portion 61 in order to make an electrical connection to the first semiconducting layer 13. An example of such a via semiconducting portion 61 is shown in FIG. 17e.

[0129] As shown in FIGS. 17b and 17c, a via semiconducting portion may be formed by selectively removing a portion of the light emitting stack 10 from the contact surface through to the first semiconducting layer 13. The selective removal process may be performed following the formation of the light emitting stack 10, and preferably prior to removal of the substrate (not shown). The selective removal process may include the patterning of the contact surface 11 using a masking layer 62. The masking layer may define one or more openings which define regions of the light emitting stack 10 to be selectively removed. The masking layer 62 may comprise any material suitable for use as a mask for a selective removal process. For example, in the embodiment of FIGS. 17a-17e, the masking layer 62 comprises SiO.sub.2. The masking layer may be formed by any suitable method, for example Chemical Vapour Deposition. The masking layer may be patterned using any suitable technique, for example lithography.

[0130] Following the formation of the masking layer 62, the light emitting stack 10 may be subjected to a selective removal process, for example etching, to form a void in which the via semiconducting portion 61 is to be formed. An example of such a void is shown in FIG. 17b.

[0131] The via semiconducting portion 61 may then be formed within the void, for example as shown in FIG. 17c. In the embodiment of FIG. 17c, the via semiconducting portion 61 comprises the same material as the first semiconducting layer 13, which in FIG. 17c is n-type doped GaN. As such, the via semiconducting portion 61 is regrown on the first semiconducting layer 13 to provide a n-type doped semiconducting region on the contact surface 11.

[0132] Following the formation of the via semiconducting portion 61, the masking layer 62 is removed and the second electrical contacts 30 are formed on the contact surface 11. As shown in FIG. 17d, the second electrical contacts 30 are formed on the regions of the contact surface 11 provided by the second semiconducting layer 15, and not on the via semiconducting portions 61.

[0133] First electrical contacts 41 are formed on the via semiconducting portions 61 to provide contacts to the first semiconducting layer 13. An example of the first electrical contacts is shown in FIG. 17e. As such, according to the fourth embodiment the first and second electrical contacts 41, 30 may be provided on the same surface (the contact surface 11) of the light emitting stack 10. The first electrical contacts 41 may comprise any suitable material for forming an Ohmic contact to the (n-type) via semiconducting portions 61.

[0134] Following the formation of the first electrical contacts 61, the contact surface 11 may be subjected to an ion implantation process. The ion implantation process may affect the exposed regions of the second semiconducting layer 15 between the first and second electrical contacts 41, 30. The ion implantation process may disrupt the crystal structure of the light emitting stack 10 in these regions to improve electrical isolation between the via semiconducting portions 61 and the light emitting devices. As such, the light emitting stack 10, for example as shown in FIG. 17e may comprise ion implanted regions 63 between the via semiconducting portions 61 and the light emitting devices. As such, the ion implanted regions 63 may effectively encircle the via semiconducting portions 61 in the light emitting device stack 10.

[0135] Thus, the fourth embodiment provides a light emitting device array 4 with first and second electrical contacts 41, 30 provided on a contact surface 11. The skilled person will appreciate that the embodiment shown in FIGS. 17a-17e is only one possible arrangement for the first and second electrical contacts 41, 30. The skilled person will appreciate that the layout of the contacts may be adjusted depending on the device size, device arrangement and so on.

[0136] As an example, FIG. 18 provides a further example of one possible arrangement of a common first electrical contact and an array of second electrical contacts 30 according to embodiments of this disclosure. As shown in FIG. 18, the common first electrical contact is provided as a perimeter first electrical contact 42. The perimeter first electrical contact 42 surrounds all of the second electrical contacts 30. The perimeter first electrical contact can be provided on the contact surface 11 of the light emitting stack 10, aligned with a corresponding via semiconducting portion 61. In some embodiments, the perimeter first electrical contact 42 could be provided on the light emitting surface 12, as an alternative to a transparent electrical contact. A perimeter first electrical contact 42 may particularly be used in embodiments where the number of light emitting devices in the array is no greater than 1000 in each dimension. As such, for light emitting device arrays having no greater than 1000 x 1000 light emitting devices, the surface area of the light emitting device array is such that a perimeter contact can deliver sufficient current to all of the light emitting devices in the array. In particular, for arrays where the pitch is no greater than 5 .Math.m, it will be appreciated that such an array having no greater than 1000 light emitting devices has a light emitting surface of no greater than about 5 mm. In some embodiments, where a light emitting array has around 400 x 600 light emitting devices with a pixel pitch of 1 .Math.m, a light emitting device array of around 0.4 mm × 0.6 mm may be provided.

[0137] In the diagram of FIG. 18, the perimeter first electrical contact 42 is shown extending around the perimeter as a continuous loop. Of course, in other embodiments, the perimeter first electrical contact 42 may not be a continuous loop. For example, a c-shaped perimeter first electrical contact 42 may be suitable. Effectively, the perimeter electrical contact 42 defines an opening on the light emitting surface 12, wherein the opening is aligned with the array of second electrical contacts 30.

[0138] In FIG. 18, the second electrical contacts 30 are shown as circular contacts. Of course, other shapes for the second electrical contacts may also be suitable.

[0139] Thus, according to embodiments of this disclosure a light emitting device array and a method of forming a light emitting device array are provided. The light emitting device arrays of this disclosure may be formed using minimal patterning steps, thereby reducing or eliminating the alignment steps during the formation of the light emitting device array. Reducing, or eliminating alignment steps is particularly advantageous for small pitch devices (e.g. devices having a pitch of no greater than 5 .Math.m) as it increases the area available for forming the light emitting device.

[0140] The light emitting area for each device is also increased by using the array of second electrical contacts on the contact surface to define each light emitting device. As such, embodiments of the present disclosure seek to increase the size of the active region for each light emitting device relative to the overall light emitting device pitch.

[0141] Although embodiments of the disclosure have been described herein in detail, it will be understood by those skilled in the art that variations may be made thereto without departing from the scope of the invention defined by the appended claims.

LIGHT EMITTING DEVICE ARRAY

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