Abstract
A wiring board includes a base board and a plurality of wiring layers formed of a resin insulating film on the base board, wherein at least one of the wiring layers includes a fine wiring, a barrier film, which is not in contact with the fine wiring, is formed at a more outer side than the base board than the wiring layer including the fine wiring, and different types of resin insulating films are used for a wiring layer at an inner side of the barrier film close to the base board and a wiring layer at an outer side of the barrier film, respectively.
Claims
1. A wiring board comprising: a base board; and a plurality of wiring layers formed of a resin insulating film on the base board, wherein at least one of the wiring layers includes a fine wiring, a barrier film, which is not in contact with the fine wiring, is formed at a more outer side than the base board than the wiring layer including the fine wiring, and different types of resin insulating films are used for a wiring layer at an inner side of the barrier film close to the base board and a wiring layer at an outer side of the barrier film, respectively.
2. The wiring board according to claim 1, wherein, as the different types of resin wiring insulating films, a resin, which is more easily oxidized than a resin used for the wiring layer at the inner side of the barrier film, is used as a resin used for the wiring layer at the outer side of the barrier film.
3. The wiring board according to claim 2, wherein when easiness of oxidation is high in the order of a phenol resin, an epoxy resin, a cycloolefin resin, a polybenzoxazole resin, and a polyimide resin, the resin of the resin insulating film of the wiring layer at the outer side of the barrier film is selected from the resins except for the polyimide resin, and the resin of the resin insulating film of the wiring layer at the inner side of the barrier film is selected from the resins lower than the selected resin in terms of the easiness of oxidation.
4. The wiring board according to claim 3, wherein when a polyimide resin is selected as the resin of the resin insulating film of the wiring layer at the inner side of the barrier film, any one of a phenol resin, an epoxy resin, a cycloolefin resin, and a polybenzoxazole resin is selected as the resin of the resin insulating film of the wiring layer at the outer side of the barrier film, when a polybenzoxazole resin is selected as the resin of the resin insulating film of the wiring layer at the inner side of the barrier film, any one of a phenol resin, an epoxy resin, and a cycloolefin resin is selected as the resin of the resin insulating film of the wiring layer of the outer side of the barrier film, when a cycloolefin resin is selected as the resin of the resin insulating film of the wiring layer of the inner side of the barrier film, a phenol resin or an epoxy resin is selected as the resin of the resin insulating film of the wiring layer at the outer side of the barrier film, and when an epoxy resin is selected as the resin of the resin insulating film of the wiring layer at the inner side of the barrier film, a phenol resin is selected as the resin of the resin insulating film of the wiring layer at the outer side of the barrier film.
5. The wiring board according to claim 1, wherein the barrier film is an inorganic barrier film.
6. The wiring board according to claim 5, wherein the inorganic barrier film is a metal oxide film or a nitride film of SiO2, SiN, SiON, or alumina, which has a film thickness less than of 50 nm.
7. The wiring board according to claim 1, wherein two wiring layers are formed at the outer side of the barrier film, and a resin, which is more easily oxidized than the resin that forms the wiring layer at the inner side of the barrier film, is used as a resin that forms the two wiring layers.
8. The wiring board according to claim 1, wherein, among a phenol resin, an epoxy resin, a cycloolefin resin, a polybenzoxazole resin, and a polyimide resin, different types of resins are used for the resin insulating films.
9. The wiring board according to claim 1, wherein the wiring board is an interposer board.
10. The wiring board according to claim 1, wherein the wiring board is a fan-out type WLP.
Description
BRIEF DESCRIPTION OF DRAWINGS
[0021] FIG. 1 is an explanatory view illustrating a structure of an interposer board in which a semiconductor chip is mounted to a PCB as a cross-sectional view;
[0022] FIG. 2A is a cross-sectional view illustrating a comparative technology of a Cu wiring using a resin insulating film;
[0023] FIG. 2B is a cross-sectional view illustrating a comparative technology in which a barrier film is formed in the outer circumference of the Cu fine wiring illustrated in FIG. 2A;
[0024] FIG. 2C is a cross-sectional view illustrating a wiring structure of a comparative technology in which a barrier layer is formed on an upper portion of the Cu fine wiring formed by using a damascene method;
[0025] FIG. 2D is a cross-sectional view illustrating a comparative technology in which an inorganic barrier film is disposed at a portion that is not in contact with the Cu fine wiring;
[0026] FIG. 3A is a cross-sectional view illustrating a structure of a wiring board of the disclosure;
[0027] FIG. 3B is a cross-sectional view illustrating a structure of a wiring board in which, among the wiring layers in the structure of the wiring board illustrated in FIG. 3A, the resins of the second and third wiring layers are reversely disposed;
[0028] FIG. 4 is a graphs illustrating resistance change rate of high-temperature test using the wiring boards illustrated in FIGS. 2A, 2B, 2D, 3A and 3B;
[0029] FIG. 5A is a partially enlarged cross-sectional view of the fine wiring in which a result of an oxidation test using the wiring board of the disclosure is illustrated;
[0030] FIG. 5B is a partially enlarged cross-sectional view of the fine wiring in which a result of an oxidation test using the wiring board of the comparative technology is illustrated;
[0031] FIG. 6 is a graph illustrating an example of a quantitative determination method of an oxidation velocity of resin;
[0032] FIG. 7A is a combination view illustrating types of resins that may be used as a resin B when a polyimide resin is used as a resin A;
[0033] FIG. 7B is a combination view illustrating types of resins that may be used as the resin B when a polybenzoxazole resin is used as the resin A;
[0034] FIG. 7C is a combination view illustrating types of resins that may be used as the resin B when a cycloolefin resin is used as the resin A;
[0035] FIG. 7D is a combination view illustrating types of resins that may be used as the resin B when an epoxy resin is used as the resin A; and
[0036] FIG. 8 is a cross-sectional view illustrating a structure of a modified example of the wiring board of the disclosure.
DESCRIPTION OF EMBODIMENTS
[0037] Hereinafter, embodiments of the present application will be described in detail based on specific examples with reference to the accompanying drawings. Further, a structure of a wiring board to be described below is a structure of a portion indicated by symbol A, of the interposer board 1 described in FIG. 1. Further, the members of the interposer board 1 of which the structures are not changed, such as, for example, the base board 2, the via 6, and the Cu fine wiring 11, are denoted by the same reference numerals as those used in FIG. 1. However, because a structure of the portion of the interposer board 1, which is indicated by symbol A, is a new structure, the following description will be made assuming that the interposer board 1 having a wiring structure to be disclosed below is a wiring board 20.
[0038] FIG. 3A is a cross-sectional view illustrating a structure of the wiring board 20 of the disclosure. A base board 2 formed of resin or Si (silicon) is present in the wiring board 20, and a plurality of wiring layers (three wiring layers in this embodiment) are present on the base board 2. The wiring layer 21, which is the first layer from the base board 2, may be formed using the same resin insulating film as that of the comparative technology. The wiring layer 22, which is the second layer from the base board 2, and the wiring layer 23, which is the third layer from the base board 2, are formed of resin insulating films using resins having different oxidation easiness. Further, an inorganic barrier film 24 is formed between the second wiring layer 22 and the third wiring layer 23. As in the comparative technology described in FIGS. 2A to 2D, the Cu fine wiring 11 is positioned on the second wiring layer 22, and the electrode 12, which is connected to the Cu fine wiring 11 through the via 6, is positioned on the third wiring layer 23.
[0039] Here, an insulating layer, which is in contact with the Cu fine wiring 11 and is positioned at a side closer to the base board 2 than the inorganic barrier film 24 (hereinafter, referred to as an inner side of the inorganic barrier film 24), is referred to as a first insulating layer F, and an insulating layer, which is positioned at a more outer side than the inorganic barrier film 24, is referred to as a second insulating layer S. In this embodiment, the first insulating layer F is formed by the first wiring layer 21 and the second wiring layer 22, and the second insulating layer S is formed only by the third wiring layer 23. Further, the first insulating layer F may be formed only by the second wiring layer 22, and another wiring layer may be added to the second insulating layer S in addition to the third wiring layer 23.
[0040] In the wiring board 20 of the disclosure, the first insulating layer F and the second insulating layer S are formed of resin insulating films using different types of resins. In more detail, a resin, which is more easily oxidized (has a high oxidation velocity) than a resin of the first insulating layer F, is used for the resin insulating film that forms the second insulating layer S. Therefore, the second insulating layer S may act as an oxidation sacrificial layer to delay the reaching of oxidation promoting materials in the environment, such as oxygen, the first insulating layer F.
[0041] Here, when the resin A is a resin used for the first insulating layer F and the resin B is a resin used for the second insulating layer S, the resins A and B may be determined by a quantitative determination method of an oxidation velocity of the resin illustrated in FIG. 6. FIG. 6 illustrates an example of a thermal analysis (TG-DTA) of a phenol-based resin, in which the TG measures a weight of the resin while raising a temperature, and the DTA measures heat generated from the resin while raising a temperature. In the case of the resin, the oxidation is an exothermic reaction, and a reaction in which a weight is typically reduced. Thus, it may be determined from FIG. 6 that the oxidation initiation temperature of the resin A is 130° C., and the oxidation initiation temperature of the resin B is 150° C. It may be said that the higher the oxidation initiation temperature of the resin, the lower the oxidation velocity and the more difficult the oxidation, and the lower the oxidation initiation temperature of the resin, the higher the influence velocity and the easier the oxidation. Therefore, the oxidation velocities of the resin A used for the first insulating layer F and the resin B used for the second insulating layer S may be measured and determined by this method.
[0042] The resin, which may be used for the resin insulating film, is mainly a phenol resin, an epoxy resin, a cycloolefin resin, a polybenzoxazole resin, a polyimide resin, or the like. It may be seen that the order of these resins in respect to the easiness of oxidation is phenol resin>epoxy resin>cycloolefin resin>polybenzoxazole resin>polyimide resin. Therefore, based on this order, a resin, which is more easily oxidized than a resin of the first insulating layer F, may be used for the second insulating layer S.
[0043] FIGS. 7A to 7D illustrate examples of combinations of the resin A used for the first insulating layer F and the resin B used for the second insulating layer S. As illustrated in FIG. 7A, when a polyimide resin, which is most difficult to be oxidized, is used as the resin A, any one of a polybenzoxazole resin, a cycloolefin resin, an epoxy resin, and a phenol resin, which is more easily oxidized than a polyimide resin, may be used as the resin B. As illustrated in FIG. 7B, when a polybenzoxazole resin is used as the resin A, any one of a cycloolefin resin, an epoxy resin, and a phenol resin, which is more easily oxidized than a polybenzoxazole resin, may be used as the resin B. As illustrated in FIG. 7C, when a cycloolefin resin is used as the resin A, an epoxy resin or a phenol resin, which is more easily oxidized than a cycloolefin resin, may be used as the resin B. In addition, as illustrated in FIG. 7D, when an epoxy resin is used as the resin A, a phenol resin, which is more easily oxidized than an epoxy resin, may be used as the resin B.
[0044] FIG. 3B is a cross-sectional view illustrating a structure of a wiring board 20A in which the types of resins of the second wiring layer 22 and the third wiring layer 23, among the wiring layers according to a structure of the wiring board 20 illustrated in FIG. 3A, are reversely disposed. That is, in the wiring board 20A illustrated in FIG. 3B, a resin, which is easily oxidized, is used for the first insulating layer F positioned at a side closer to (an inner side) the base board 2 than the inorganic barrier film 24. Further, a resin, which is more difficult to be oxidized than the resin used for the first insulating layer F, is used for the second insulating layer S positioned at a more outer side than the inorganic barrier film 24.
[0045] FIG. 4 illustrates corrosion degrees of the Cu fine wirings 11 of the wiring board 20 illustrated in FIG. 3A, and the wiring boards 1 illustrated in FIGS. 2A, 2B, and 2D, and the wiring board 20A illustrated in FIG. 3B in comparison, after performing a high-temperature test. It may be determined that the corrosion degree of the Cu fine wiring 11 is high when the resistance change rate of the Cu fine wiring 11 increases. In this high-temperature test, the wiring resistance change rates were measured for 24 hours in a state in which the wiring width of each Cu fine wiring 11 was 1.0 pm, both of a thickness of the first wiring layer F at the inner side of the inorganic barrier film 24 and a thickness of the second wiring layer S at the outer side of the inorganic barrier film 24 were 15 μm, and a temperature was 200° C.
[0046] A graph (a) of FIG. 4 illustrates a resistance change rate of the wiring board 1 illustrated in FIG. 2A, a graph (b) of FIG. 4 illustrates a resistance change rate of the wiring board 1 illustrated in FIG. 2B, a graph (c) of FIG. 4 illustrates a resistance change rate of the wiring board 1 illustrated in FIG. 2D, a graph (d) of FIG. 4 illustrates a resistance change rate of the wiring board 20 illustrated in FIG. 3A, and a graph (e) of FIG. 4 illustrates a resistance change rate of the wiring board 20A illustrated in FIG. 3B, according to the high-temperature test. As indicated by broken line B in FIG. 4, while the wiring board 20 of the disclosure illustrated in FIG. 4 has almost no resistance change rate of the Cu fine wiring 11, the other wiring boards illustrated in FIG. 4 have high the resistance change rate of the Cu fine wiring 11. Therefore, it may be seen from FIG. 4 that in the wiring board 20 of the disclosure illustrated in FIG. 3A, the Cu fine wiring 11 is not affected by oxidation.
[0047] FIG. 5A is a view illustrating a state of the Cu fine wiring 11 which illustrates a result of a high-temperature test (oxidation test) using the wiring board 20 of the disclosure, and FIG. 5B is a view illustrating a state of the Cu fine wiring 11 which illustrates a result of a high-temperature test using a wiring board of the comparative technology (e.g., the wiring board illustrated in FIG. 2B). Further, because FIGS. 5A and 5B are views obtained by tracing out photographs of cross sections of the wiring board 20 of the disclosure after the high-temperature test and the wiring board 1 illustrated in FIG. 2B, a degree of deformation may be seen even though a shape of each Cu fine wiring 11 is not accurate. From the comparison of FIG. 5A and FIG. 5B, it may be seen that the Cu fine wiring 11 according to the wiring board 20 of the disclosure is hardly oxidized, while the Cu fine wiring 11 according to the comparative technology is considerably oxidized.
[0048] As described above, the wiring board 20 having the structure illustrated in FIG. 3A may improve reliability when the Cu fine wiring is used over a long period of time, and further, using the wiring board 20 having the structure illustrated in FIG. 3A enables the quality of a device product to be improved.
[0049] In the aforementioned example, of the wiring layers 21 and 22 between the inorganic barrier layer 24 and the base board 2, only the second wiring layer 22 is provided with the Cu fine wiring 11, but the Cu fine wiring 11 may also be provided on the first wiring layer 21.
[0050] In the aforementioned example, the second insulating layer S is formed only by the third wiring layer 23, but as illustrated in FIG. 8, a wiring board 20B, in which the second insulating layer S is formed by the third wiring layer 23, and the fourth wiring layer 25, is enabled. In the wiring board 20B, different types of resins, which are easily oxidized, may be used as the resins used for the third wiring layer 23 and the fourth wiring layer 25. The degree of easiness of oxidation of the used resin of the third wiring layer 23 may be high, or the degree of easiness of oxidation of the used resin of the fourth wiring layer 25 may be high. However, both of the resins used for the third wiring layer 23 and the fourth wiring layer 25 are selected to be more easily oxidized than a resin used for the first insulating layer F.
[0051] All examples and conditional language recited herein are intended for pedagogical purposes to aid the reader in understanding the invention and the concepts contributed by the inventor to furthering the art, and are to be construed as being without limitation to such specifically recited examples and conditions, nor does the organization of such examples in the specification relate to an illustrating of the superiority and inferiority of the invention. Although the embodiments of the present invention have been described in detail, it should be understood that the various changes, substitutions, and alterations could be made hereto without departing from the spirit and scope of the invention.
