TUNABLE LASER SOURCE

Abstract

The invention relates to a tunable laser source, and the reduction in the loss and the size can both be achieved in a tunable laser source having a power monitor and a wavelength locker function. A tunable laser is formed of a semiconductor optical amplifier and a resonator, and one of the two output light beams split from part of the light within the tunable laser by a 2×2 type optical splitter is incident into a light intensity monitor, and the other is incident into a wavelength locker.

Claims

1. A tunable laser source, comprising: a semiconductor optical amplifier; a resonator that forms a tunable laser together with the semiconductor optical amplifier; a 2×2 type optical splitter that is optically coupled with the semiconductor optical amplifier and the resonator and that splits part of the light within the tunable laser into two output light beams; a light intensity monitor into which one output light beam from among the two output light beams split by the optical splitter enters; and a wavelength locker into which the other output light beam from among the two output light beams split by the optical splitter enters.

2. The tunable laser source according to claim 1, wherein the output light beam that is incident into the light intensity monitor is the output light beam outputted from the resonator side from among the two output light beams split by the optical splitter, and the output light beam that is incident into the wavelength locker is the output light beam outputted from the semiconductor optical amplifier side from among the two output light beams split by the optical splitter.

3. The tunable laser source according to claim 2, wherein the optical splitter is a directional coupler.

4. The tunable laser source according to claim 2, wherein the optical splitter is a multimode interference coupler.

5. The tunable laser source according to claim 2, wherein the optical splitter is crossing waveguides.

6. The tunable laser source according to claim 2, wherein the resonator is formed of a silicon photonic wire.

7. The tunable laser source according to claim 6, wherein the light intensity monitor has a germanium layer layered on top of a silicon layer.

8. The tunable laser source according to claim 2, wherein at least the semiconductor optical amplifier, the resonator, the optical splitter and the light intensity monitor are formed of a III-V compound semiconductor in a monolithic manner.

9. The tunable laser source according to claim 1, wherein the optical splitter is a directional coupler.

10. The tunable laser source according to claim 1, wherein the optical splitter is a multimode interference coupler.

11. The tunable laser source according to claim 1, wherein the optical splitter is crossing waveguides.

12. The tunable laser source according to claim 1, wherein the resonator is formed of a silicon photonic wire.

13. The tunable laser source according to claim 12, wherein the light intensity monitor has a germanium layer layered on top of a silicon layer.

14. The tunable laser source according to claim 1, wherein at least the semiconductor optical amplifier, the resonator, the optical splitter and the light intensity monitor are formed of a III-V compound semiconductor in a monolithic manner.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0019] FIG. 1 is a schematic diagram illustrating the configuration of the tunable laser source according to the embodiment of the present invention.

[0020] FIG. 2 is a schematic diagram illustrating the structure of the tunable laser source according to Example 1 of the present invention.

[0021] FIG. 3 is a diagram illustrating the resonator formed on the Si photonic platform.

[0022] FIG. 4 is a schematic perspective diagram illustrating an example of an SOA that is used for the tunable laser source according to Example 1 of the present invention.

[0023] FIG. 5 is a schematic diagram illustrating the configuration of an example of a wavelength locker that is used for the tunable laser source according to Example 1 of the present invention.

[0024] FIG. 6 is a schematic diagram illustrating the configuration of the tunable laser source according to Example 2 of the present invention.

[0025] FIG. 7 is a schematic diagram illustrating the configuration of the tunable laser source according to Example 3 of the present invention.

[0026] FIG. 8 is a schematic diagram illustrating the configuration of the tunable laser source according to Example 4 of the present invention.

[0027] FIG. 9 is a schematic diagram illustrating the configuration of the tunable laser source according to Example 5 of the present invention.

[0028] FIG. 10 is a schematic diagram illustrating the configuration of a conventional tunable laser source.

[0029] FIG. 11 is a schematic diagram illustrating the configuration of a tunable laser source in the case where the components are integrated.

[0030] FIG. 12 is a schematic diagram illustrating the configuration of a tunable laser source in the case where Y-shaped branches are used as optical splitters.

DESCRIPTION OF EMBODIMENTS

[0031] In reference to FIG. 1, the tunable laser source according to an embodiment of the present invention is described. FIG. 1 is a schematic diagram illustrating the configuration of the tunable laser source according to the embodiment of the present invention. The tunable laser source according to the embodiment of the present invention has a semiconductor optical amplifier 2 and a resonator 3 that forms a tunable laser 1 with the semiconductor optical amplifier 2. In addition, the tunable laser source has a 2×2 type optical splitter 4 that splits part of the light outputted from the tunable laser 1, a light intensity monitor 5 into which one of the two beams that has been split from the outputted light by the optical splitter 4 is incident, and a wavelength locker 6 into which the other of the two beams that has been split from the outputted light by the optical splitter 4 is incident. The use of the 2×2 (two inputs, two outputs) type optical splitter 4 makes it possible for an optical splitter in only one stage to input light into the power monitor and the wavelength locker, and therefore, it is possible to reduce the loss in and the size of the system.

[0032] The wavelength locker 6 is formed of a waveguide that has an interferometer, and therefore has a loss to a certain degree, and thus, it is desirable for the input into the wavelength locker 6 to be greater than the input into the light intensity monitor 5. Meanwhile, the resonator 3 also has a loss of light, and therefore, the power incident into the optical splitter 4 from the semiconductor optical amplifier 2 side is greater than the power incident into the optical splitter 4 from the resonator 3 side. Accordingly, it is desirable for the outputted light that is incident into the light intensity monitor 5 to be the outputted light from the resonator 3 side split by the optical splitter 4, and for the outputted light that is incident into the wavelength locker 6 to be the outputted light from the semiconductor optical amplifier 2 side split by the optical splitter 4.

[0033] The optical splitter may be a directional coupler, a multimode interference (MMI) coupler or a crossing waveguide. In the case where a directional coupler is used, it is possible to reduce the loss, and in the case where a multimode interference (MMI) coupler is used, the split ratio of the wavelength characteristics can be reduced.

[0034] It is desirable for the resonator 3 to be a resonator that is formed of a silicon photonic wire using an SOI substrate for the purpose of miniaturization. In this case, a germanium photodiode that is formed in a germanium layer that is layered on top of a silicon layer may be used as the light intensity monitor. In the case where an SOI substrate is used, the semiconductor optical amplifier 2 made of a compound semiconductor is mounted in a region that is provided in a portion of the single crystal silicon substrate in the SOI substrate that has been dug down.

[0035] Alternatively, at least the semiconductor optical amplifier 2, the resonator 3, the optical splitter 4 and the light intensity monitor 5 may be formed of a III-V compound semiconductor such as an InGaAsP/InP-based semiconductor in a monolithic manner, which can reduce the costs for mounting.

[0036] Though the resonator 3 may have any structure, the resonator 3 may be formed of three optical waveguides, ring resonators that are provided between them as a wavelength adjusting means, and a loop mirror that is provided in the optical waveguide in the final stage as a light reflecting means. In this case, it is desirable to provide a heater for adjusting the resonating wavelength or the phase to a ring resonator or an optical waveguide.

[0037] In addition, the wavelength locker 6 may have any structure, and one example is one that splits the monitor output from the optical splitter 4 by a half mirror or a beam splitter so that the output in one direction is monitored by a photodiode and the output in the other direction is received by another photodiode through an etalon. The outputs detected by the two photodiodes are compared to detect a fluctuation in the wavelength.

[0038] According to the embodiment of the present invention, the use of the 2×2 type optical splitter 4 as an optical splitter can allow one optical splitter 4 to gain light to be incident into the light intensity monitor 5 and light to be incident into the wavelength locker 6. As a result, both a miniaturization of the tunable laser source and a reduction in the loss can be achieved.

Example 1

[0039] Next, the tunable laser source according to Example 1 of the present invention is described in reference to FIGS. 2 through 5. FIG. 2 is a schematic diagram illustrating the structure of the tunable laser source according to Example 1 of the present invention, where a tunable laser is formed of a resonator 20 that is formed on an Si photonic platform 10 using an SOI substrate and an SOA 40 that is provided with an MQW active layer that works as a gain waveguide. A power monitor 50 and a wavelength locker 60 are provided on the Si photonic platform 10 and optically coupled with the tunable laser through a directional coupler 30, and all of these form a TLS chip.

[0040] FIG. 3 is a diagram illustrating the resonator formed on the Si photonic platform, which is provided with optical waveguides 21, 23 and 25 formed of an Si photonic wire sandwiched between a BOX layer made of SiO.sub.2 and an upper clad layer made of SiO.sub.2, and two ring resonators 22 and 24 having different curvature radiuses in order to gain the Vernier effect for selecting a wavelength. In addition, a loop mirror 26 is provided at the end portion of the optical waveguide 25 as a total reflection mirror. Though the size of the Si photonic wire is not particularly defined, here, the thickness is 250 nm and the width is 500 nm.

[0041] The two ring resonators 22 and 24 are provided with heaters 27 and 28 in order to carry out wavelength tuning by changing the refractive index, and a heater 29 for adjusting the phase is provided along the optical waveguide 25 in a location directly in front of the loop mirror 26. In addition, a directional coupler 30 is formed along the optical waveguide 21 with a coupling waveguide 31 arranged in proximity.

[0042] FIG. 4 is a schematic perspective diagram illustrating an example of an SOA that is used for the tunable laser source according to Example 1 of the present invention, where an n type InP clad layer 42, an MQW active layer 43, a p type InP clad layer 44 and a p type InGaAs contact layer 45 are sequentially deposited on an n type InP substrate 41. Next, a portion of the multilayer from the p type InGaAs contact layer 45 through the n type InP substrate 41 is etched in a striped form so as to form a mesa structure, and this mesa structure in a striped form is buried with an Fe-doped InP burying layer 46. An n side electrode 47 is formed on the rear surface of the n type InP substrate 41, and a p side electrode 48 is provided on the p type InGaAs contact layer 45. The MQW active layer 43 is formed of, for example, six GaInAsP well layers having a thickness of 5.1 nm and seven GaInAsP barrier layers having a thickness of 10 nm, which are layered alternately.

[0043] Though not shown, an anti-reflecting coating is provided on the entrance plane of the SOA 40 in such a manner that the cleavage plane, which is the output plane of the SOA 40, and the loop mirror 26 form a resonator for a tunable laser. The SOA 40 is mounted in a region that has been dug out of a portion of the single crystal silicon substrate in an SOI substrate.

[0044] FIG. 5 is a schematic diagram illustrating the configuration of an example of a wavelength locker that is used for the tunable laser source according to Example 1 of the present invention. A wavelength locker 60 is formed of a half mirror 61, a photodiode 62 for monitoring the light output, an etalon filter 63, and a photodiode 64 for monitoring the wavelength. The monitoring light that has been incident through the coupling waveguide 31 from the directional coupler 30 is split in two by the half mirror 61. One of them enters into the photodiode 62 so as to monitor the light output. The other transmits through the etalon filter 63, and then enters into the photodiode 64. The wavelength transmission properties of the etalon filter 63 have periodicity, and therefore, in the case where the wavelength of the light outputted from the tunable laser fluctuates due to deterioration over time, the change in the wavelength is detected by the photodiode 64.

[0045] A photodiode made of a compound semiconductor is used for the power monitor 50, which is mounted in a region that has been dug out of a portion of the single crystal silicon substrate in an SOI substrate. Here, the width of the single crystal silicon layer in a portion that has extended from the coupling waveguide 31 made of an Si photonic wire may be widened, and a germanium layer may be grown on top of that so as to form a germanium photodiode, which may be used as the power monitor 50. The Si photonic platform 10 is mounted on a TEC (thermo-electric cooler) for stabilizing the temperature of the element.

[0046] In Example 1 of the present invention, a directional coupler, which is a 2×2 type optical splitter, is used as the optical splitter, and therefore, only one optical splitter needs to be used in order to achieve both the miniaturization of the tunable laser source and the reduction in the loss. Furthermore, a directional coupler has a smaller loss as compared to a Y-shaped branch, and therefore, it is possible to reduce the loss as compared to the prior art.

Example 2

[0047] Next, the tunable laser source according to Example 2 of the present invention is described in reference to FIG. 6, wherein the reflection between the above-described SOA and the resonator in Example 1 is prevented. FIG. 6 is a schematic diagram illustrating the configuration of the tunable laser source according to Example 2 of the present invention. In Example 2, an inclined portion 21.sub.10 is provided on the output end side of the optical waveguide 21, and at the same time, the MQW active layer 43 in the SOA 40 is formed of an inclined waveguide 43.sub.1 that is inclined by an angle of 7° relative to the normal of the end surface, a bent waveguide 43.sub.2 and a linear waveguide 43.sub.3. As a result, the reflection between the end surface on the incident side of the SOA 40 and the output end of the optical waveguide 21 can be prevented.

Example 3

[0048] Next, the tunable laser source according to Example 3 of the present invention is described in reference to FIG. 7, wherein the above-described Si photonic platform in Example 1 is replaced with a compound semiconductor substrate 10.sub.1. FIG. 7 is a schematic diagram illustrating the configuration of the tunable laser source according to Example 2 of the present invention. In Example 3, the multilayer structure for forming the SOA 40.sub.1 is used to form a resonator 20.sub.1, a power monitor 50.sub.1 and a wavelength locker 60.sub.1 in a butt joint structure.

[0049] In Example 3, only the etalon filter needs to be mounted in a hybrid manner, and therefore, the mounting costs can be reduced. In Example 3 as well, the SOA 40.sub.1 and the optical waveguide 21.sub.1 may have an inclined structure in the same manner as in Example 2.

Example 4

[0050] Next, the tunable laser source according to Example 4 of the present invention is described in reference to FIG. 8, wherein the above-described directional coupler in Example 1 is replaced with a 2×2 MMI coupler 32. FIG. 8 is a schematic diagram illustrating the configuration of the tunable laser source according to Example 4 of the present invention. In Example 4, a 2×2 MMI coupler 32 is provided along the optical waveguide 21 in such a manner that the power monitor 50 is connected to one output port 33, and the wavelength locker 60 is connected to the other output port 34.

[0051] In Example 4, the 2×2 MMI coupler 32 is used as the optical splitter, and therefore, the split ratio can be made smaller in terms of the wavelength properties. In Example 4, the SOA 40 and the optical waveguide 21 may have an inclined structure in the same manner as in Example 2, or the entirety may be made of a compound semiconductor as in Example 3.

Example 5

[0052] Next, the tunable laser source according to Example 5 of the present invention is described in reference to FIG. 9, wherein the above-described directional coupler in Example 1 is replaced with crossing waveguides 35. FIG. 9 is a schematic diagram illustrating the configuration of the tunable laser source according to Example 5 of the present invention. In Example 5, an optical waveguide 36 that crosses the optical waveguide 21 is provided as the crossing waveguides 35, which work as an optical splitter. The power monitor 50 is connected to one end portion of the optical waveguide 36, and the wavelength locker 60 is connected to the other end portion.

[0053] In Example 5 as well, the SOA 40 and the optical waveguide 21 may have an inclined structure in the same manner as in Example 2, or the entirety may be made of a compound semiconductor as in Example 3.

[0054] All examples and conditional language provided herein are intended for the pedagogical purposes of aiding the reader in understanding the invention and the concepts contributed by the inventor to further the art, and are not to be construed as limitations to such specifically recited examples and conditions, nor does the organization of such examples in the specification relate to a showing of the superiority and inferiority of the invention. Although one or more embodiments of the present invention have been described in detail, it should be understood that the various changes, substitutions, and alterations could be made hereto without departing from the spirit and scope of the invention.