SOLID-STATE HYPERFREQUENCY AMPLIFIER AND POWER COMBINER COMPRISING FOUR SUCH SOLID-STATE AMPLIFIERS

Abstract

A solidstate amplifier includes at least one interconnection, between a microstrip and a linearized impedance matching waveguide ridge, the interconnection being provided with a clamping device.

Claims

1. A solid state power amplifier comprising at least one interconnection, between a propagation line and a linearized impedance matching waveguide ridge , said interconnection being provided with a clamping device that guarantees direct contact between the ridge and the propagation line .

2. The solid state power amplifier as claimed in claim 1, wherein the clamping device comprises at least one pressure screw .

3. The solid state power amplifier as claimed in claim 2, wherein the pressure screw comprises a spherical end or a flat end.

4. The solid state power amplifier as claimed in claim 1, wherein the clamping device comprises a pressure support stiffener .

5. A power combiner device comprising four solid state power amplifiers as claimed in claim 1, which are connected in an H configuration by a magic T device .

6. The power combiner device as claimed in claim 5, wherein the elements are mounted flat.

7. The power combiner device as claimed in claim 5, wherein the magic T device is in one piece.

8. The power combiner device as claimed in claim 7, wherein the onepiece magic T device comprises an S-flange, a bidirectional coupler, three two-to-one basic magic Ts, line-to-guide transitions and guide-to-coaxial links transitions.

Description

[0028] The invention will be better understood from studying a number of embodiments described by way of entirely non-limiting examples and illustrated by the attached drawing in which:

[0029] FIG. 1 schematically illustrates a solid state power amplifier according to the prior art;

[0030] FIG. 2 schematically illustrates a solid state power amplifier according to one aspect of the invention;

[0031] FIG. 3 schematically illustrates a solid state power amplifier according to one aspect of the invention;

[0032] FIG. 4 schematically illustrates a solid state power amplifier according to another aspect of the invention;

[0033] FIG. 5 schematically illustrates a solid state power amplifier according to another aspect of the invention;

[0034] FIG. 6 schematically illustrates a solid state power amplifier according to another aspect of the invention;

[0035] FIG. 7 schematically illustrates a power combiner according to another aspect of the invention.

[0036] In all of the figures, elements having identical references are similar.

[0037] A solid state power amplifier according to one aspect of the invention is illustrated in FIG. 2.

[0038] By contrast to the principle of transition between a strip acting as propagation line and the waveguide ridge as described in the prior art of FIG. 1, said transition being implemented by a micro-ribbon link between the ridge of the guide and the microstrip, the present invention implements this transition by direct contact between the ridge and the propagation line, which is ensured by a clamping device comprising, for example, at least one pressure screw.

[0039] The solid state power amplifier comprises an upper part 0 of a waveguide, a linearized impedance matching ridge 1, and a lower part 2 of the waveguide, which lower part may, in certain cases, itself also have a linearized impedance matching ridge.

[0040] The solid state amplifier comprises a printed circuit 3 provided with a propagation line or microstrip 6, at least one pressure screw 4, and a pressure support stiffener 5. The amplifier also comprises a support base 7 and a cavity 8 of the guide. In the figures, only a device with a pressure screw 4 is shown, but in a non-limiting manner.

[0041] The solid state amplifiers of the prior art all use wired (ribbon link), connectorized (coaxial link) or radiated (antennae) interconnections.

[0042] FIGS. 3 and 4 show sectional views of a solid state amplifier according to one aspect of the invention, in a front view and side view, respectively.

[0043] The object of the solid state amplifier of the invention is to transmit an electromagnetic signal from a propagation line or microstrip 6 to a guide section or section of the cavity 8 of the guide.

[0044] This transmission may be implemented as a narrowband transmission by means of a single ridge 1. In order to widen the bandwidth to 6-18 GHz, it is necessary to utilize a double-ridge linearized impedance matching system 3, 6 as illustrated in FIGS. 3 and 4. In order for this transmission to be effective, it is necessary to guarantee electrical contact between the ridge 1 and the microstrip 6.

[0045] However, due to production and assembly tolerances of the mechanical components and of the printed circuit 3 mounted on its printed circuit base 7 (there is therefore a printed circuit 3 mounted on a metallic base), a thin residual space separating the two transmission lines or ridges (ridge 1 and microstrip 6) remains which has to be bridged.

[0046] In order to ensure electrical contact over the entire temperature range (taking account of expansion effects) and during any intended use (requirements of resistance to vibrations and ability to withstand knocks), at least one pressure screw 4 is anchored in a pressure support stiffener 5 and deforms the cavity 8 by pressing on the ridge 1 while remaining in the elastic domain.

[0047] The pressing on the ridge 1 makes it possible to establish contact between its lower end and the propagation line or microstrip 6.

[0048] Proper operation of the amplifier is conditional on: [0049] the pressing on the ridge 1, which has to be controlled, and the deformation, which has to be limited so as to not notably modify the dimensions of the cavity 8 (impact on the quality of the propagation); [0050] the printed circuit with which the ridge 1 is in contact has to be tough and has to have a line or microstrip width that is compatible with the width of the ridge at its end; the type of printed circuit has to be able to reach the expected power (50W CW) over the entire range of temperatures, ranging from -40° to +85° C.; [0051] the operating time of the solid state amplifier should not lead to degradation of the printed circuit, such that it remains in the elastic domain; [0052] the link has to be able to be mounted and removed by simple screwing and unscrewing without altering the performance.

[0053] Preferably, the substrate is resistant to deformations below a minimum pressure of 500 MPa, and is made of Al.sub.2O.sub.3 or duroid (registered trademark) of the RO4350 or RO4003 type, and the tightening torque of the screw should not lead to irreversible deformation by remaining within the limits of the elastic domain.

[0054] In a preferred embodiment, the mechanical tolerances and assembly tolerances are compatible with the type of substrate used and therefore with its dielectric permittivity er. Consequently, the maximum permissible dimension of the gap G1, as illustrated in FIGS. 5 and 6, is 0.1 mm in order to make sure to remain within the elastic domain of the clamping device or clamp. The tolerances Tx and Tz are then smaller than 0.1 mm. The architecture illustrated in FIG. 7 allows the printed circuit to be brought into abutment against the lower part 2 of the guide, thus resulting in G2=0, a crucial element for proper microwave operation. Thus: G1, Tx, Tz and Ty < 0.1 mm and G2 = 0.

[0055] As shown in FIG. 5, the tolerance Tz of the Z alignment between the lower guide 2 and the support base 7 remains much smaller than the thickness H of the substrate, with

[00001]$\frac{H}{T}>5.$

[0056] Equally, it is important that the bearing zone of the ridge 1 is aligned with the microstrip, as shown in FIG. 6. Also, preferably, the tolerance Tx of the x alignment between the ridge 1 and the microstrip 6 remains much smaller than the width Wr of the ridge 1 at the contact zone with the printed circuit, or the width Wl of the microstrip 6 is larger than Wr to which the assembly tolerance of 0.1 mm is added. Simulations therefore imply that is necessary to have:

[00002]$\frac{Wr}{Tx}<4orWl>Wr+0.1mm$

[0057] Thus, the target value er of the substrate of the printed circuit is given by the following relationship:

[00003]$\begin{array}{c}for\frac{W}{h}<1Z_0=\frac{60}{\sqrt{{\epsilon }_{eff}}}ln\left(\frac{8h}{W}+\frac{W}{4h}\right)\\ \text{with}{\epsilon }_{eff}=\frac{{\epsilon }_r+1}{2}+\frac{{\epsilon }_r-1}{2}\left[{\left(1+12\frac{h}{W}\right)}^{-\frac{1}{2}}+0.04{\left(1-\frac{W}{h}\right)}^2\right]\end{array}$

[0058] The substrate is preferably also a low-loss substrate, that is to say it has to offer the lowest possible tan delta (tan δ) (conventionally <0.001) in order to limit heating by linear losses and to offer excellent thermal conductivity.

[0059] As illustrated in FIG. 7, there is also proposed a power combiner comprising four solid state power amplifiers 10 as described above, which are connected in an H configuration by a magic T 11, referred to as four-to-one with H topology which has the particular feature that one half is fused with a frame 12 and the other half is assembled by screw fastening 13. The combiner comprises a bidirectional coupler 14. Furthermore, the upper part of the combiner device covers both the lower part of the combiner that is fused with the frame and the four solid state amplifier modules.

[0060] The pressure screws 4 make it possible to guarantee contact between the amplifiers 10 and the entries of the magic T 11.

[0061] The H configuration of the combiner makes it possible to optimize the footprint and the distribution of hot points. The four-to-one magic T is in one piece (S-flange and bidirectional coupler 14 are machined integrally) and incorporates microstrip-to-double-ridge guide transitions with non-standard impedance matching which allow optimal compactness without transition. The losses are therefore minimal and the efficiency is maximized.

[0062] The power amplifiers 10, the magic T device 11 and the bidirectional coupler 14 are assembled and removed very easily by simple screw fastening. Maintenance and repairability are thus greatly facilitated.

[0063] The interconnections of the combiner device are not hyperstatic.

[0064] The combiner device also comprises a conductor module or “driver” 18 to pre-amplify the signal.

[0065] The “flat” mounting configuration of the elements of the combiner device allows thermal factors to be managed easily. The modular design permits low-cost upgradability in addition to easy maintenance.

[0066] The combiner device offers isolation between channels which makes it possible to implement graceful degradation.

[0067] In this example, the substrate used is an alumina of thickness H=0.6 mm and the line thickness of which is WI=0.6 mm for a characteristic impedance of 50 ohms. On the side of the abutting ridge, the width is Wr=0.4 mm and the length of overlap is S=0.8 mm.