Workpiece retainer, wire electric discharge machining device, thin-plate manufacturing method, and semiconductor-wafer manufacturing method
09833854 · 2017-12-05
Assignee
Inventors
- Takashi Yuzawa (Tokyo, JP)
- Hidetaka Miyake (Tokyo, JP)
- Tatsushi Sato (Tokyo, JP)
- Atsushi ITOKAZU (Tokyo, JP)
Cpc classification
B23H9/00
PERFORMING OPERATIONS; TRANSPORTING
B23H11/003
PERFORMING OPERATIONS; TRANSPORTING
International classification
B23H1/02
PERFORMING OPERATIONS; TRANSPORTING
B23H11/00
PERFORMING OPERATIONS; TRANSPORTING
B23H9/00
PERFORMING OPERATIONS; TRANSPORTING
B23H7/00
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A workpiece retainer retains a workpiece at a time of a cutting process by a wire electric discharge machining device that cuts a workpiece by electric discharge from wire electrodes that are spaced from each other and are arranged in parallel. The workpiece retainer is formed with a fitting portion, into which the workpiece is fitted substantially without any gap, and has an external shape such that at a time of cutting the workpiece retainer together with the workpiece fitted in the fitting portion, a length along the wire electrodes of a portion where the workpiece retainer and the workpiece face the wire electrodes becomes substantially constant during the cutting process of the workpiece.
Claims
1. A thin-plate manufacturing method comprising: fixing a workpiece to a workpiece retainer formed of a material having electric discharge machining characteristics different from those of the material of the workpiece, wherein a length of a portion where the workpiece faces the wire electrodes, such that the wire electrodes extending in a cutting direction are able to cut the facing portion of the workpiece, changes with progress of a cutting process of the workpiece; cutting the facing portion of the workpiece and the workpiece retainer using a wire electric discharge machining device that cuts by electric discharge from wire electrodes that are spaced from each other and are arranged in parallel, and by applying a pulsed machining voltage between the wire electrodes and the workpiece retainer to each of the wire electrodes, and supplying machining fluid to a machining groove using a machining fluid nozzle, wherein the workpiece retainer is formed with a fitting portion comprising a cavity into which the workpiece is fitted, a cross sectional shape of the workpiece and a cross sectional shape of the cavity of the fitting portion in the retainer, both cross sectional shapes being viewed perpendicular to a plane containing the cutting direction, are substantially the same, and the workpiece retainer has an external shape such that at a time of cutting the workpiece fitted in the fitting portion together with the workpiece retainer a length along the wire electrodes of a portion where the workpiece retainer and the workpiece face the wire electrodes is substantially constant during a cutting process of the workpiece; changing a pulse frequency of the pulsed machining voltage during the cutting process according to the length of the portion of the workpiece where the workpiece faces the wire electrodes, such that an electric discharge machining gap is maintained constant during the cutting process; and gradually increasing the pulse frequency and a feed rate of wire electrodes in a section from a start of a cutting process until machining is stabilized, in a state where a ratio between the pulse frequency and the feed rate of the wire electrodes is maintained.
2. The thin-plate manufacturing method according to claim 1, further comprising: increasing the pulse frequency of the pulsed machining voltage when the length of the portion where the workpiece faces the wire electrodes increases.
3. The thin-plate manufacturing method according to claim 2, wherein the material of the workpiece retainer has better electric discharge machining characteristics than those of the material of the workpiece.
Description
BRIEF DESCRIPTION OF DRAWINGS
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DESCRIPTION OF EMBODIMENTS
(19) Exemplary embodiments of a workpiece retainer, a wire electric discharge machining device, a thin-plate manufacturing method, and a semiconductor-wafer manufacturing method according to the present invention will be explained below in detail with reference to the accompanying drawings. The present invention is not limited to the embodiments.
First Embodiment
(20)
(21) A workpiece retainer 10 that retains a workpiece 8 is arranged opposite to the cutting wire portion 2a and away from the cutting wire portion 2a by a minute distance by a position controller (not shown). As shown in
(22) The cutting wire portion 2a is constituted by wires laid across between the guide rollers 3a and 3b in a tensioned state parallel to each other. The machining power supply 6 is formed of a plurality of machining power-supply units 61 insulated from each other. The power feed contacts 7A and 7B are also formed of a plurality of power feed contact units 71 insulated from each other. Power is fed to each cutting wire portion 2a from each corresponding machining power-supply unit 61 via each power feed contact unit 71 to form a state where a voltage can be applied to each cutting wire independently. The polarity of applying a voltage by the machining power supply 6 can be appropriately reversed as required, as in the conventional wire electric discharge machining device.
(23) As described above, because the position of the workpiece retainer 10 that retains the workpiece 8 is always controlled by a position controller (not shown) with a minute gap to maintain appropriate electric discharge gap with the cutting wire portion 2a, the workpiece 8 is gradually fed in a direction of the cutting wire portion 2a and the machined groove becomes deep as the machined groove is formed by electric discharge, and is eventually cut in a thin plate shape.
(24) The workpiece 8 needs to be sliced into a plurality of thin plates, and for example, includes metals such as tungsten and molybdenum as a sputtering target, ceramics such as multicrystalline silicon carbide used as various structural members, semiconductor materials such as monocrystalline silicon and monocrystalline silicon carbide as a semiconductor device wafer, and solar battery materials such as monocrystalline and multicrystalline silicon as a solar battery wafer. Metals of the materials mentioned above have a sufficiently low specific resistance, and there is no problem in application of electric discharge machining. The semiconductor materials and the solar battery materials that can be subjected to electric discharge machining are materials having a specific resistance of about 100 Ωcm or less, preferably 10 Ωcm or less.
(25) Therefore, as the workpiece 8 according to the present invention, a metal or a material having a specific resistance in a range from an equivalent value of the metal to 100 Ωcm or less, preferably, 10 Ωcm or less, and particularly, the semiconductor material and the solar battery material having a specific resistance in the above range are preferable. In the example in
(26) The power feed contacts can be installed slightly away from the cutting wire portions 2a via the guide roller 3b as in the power feed contact 7A, or can be installed between the workpiece 8 and the guide roller 3a and near the workpiece 8 as in the power feed contact 7B.
(27) The workpiece retainer 10 that retains the workpiece 8 is explained next.
(28) When the workpiece 8 is a semiconductor material, a cylindrical ingot as shown in
(29) A fitting portion 102 for inserting the workpiece 8 is formed in the workpiece retainer 10. A workpiece in a cylindrical shape in cross section having the notch 8a can be fitted in the fitting portion 102 substantially without any gap. That is, a cross-sectional shape of the workpiece 8 and a cross-sectional shape of the fitting portion 102 are substantially the same. An example in which the notch 8a is arranged at the lowest end of the fitting portion 102 is shown in
(30) The workpiece retainer 10 is cut together with the workpiece 8 by the wire electric discharge machining device in a state of retaining the workpiece 8. That is, the workpiece retainer 10 is also made of a metal or a material having a specific resistance in a range from an equivalent value of the metal to 100 Ωcm or less, preferably, 10 Ωcm or less, as in the workpiece 8. While the material of the workpiece retainer 10 preferably has the same composition as that of the workpiece 8, a generally used structural material such as brass or an iron material can be used without any problem, taking economic efficiency into consideration.
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(32)
(33) In the wire electric discharge machining device described in the first embodiment, the workpiece 8 is fitted in the fitting portion 102 of the workpiece retainer 10, a pulsed machining voltage is applied to the wire electrode 2 via the power feed contact unit 71, and the workpiece retainer 10 that retains the workpiece 8 is fed toward the wire electrode 2, thereby cutting the workpiece 8 to manufacture thin plates. As the workpiece 8, a semiconductor wafer can be manufactured by using a semiconductor material.
(34) As explained above, when the workpiece retainer 10 according to the present invention is used, the facing length WJ 21 between the wire electrode 2 and the workpiece 8 during the cutting process becomes substantially constant even when the cutting process progresses. Therefore, setting of machining conditions becomes easy, and conditions that can satisfy both of improvement of the machining speed and machining stability are easily determined. Furthermore, as shown in
(35) As shown in
(36) As described above, because the facing length WJ 21 is substantially constant during the cutting process, even in a complicated machining system that simultaneously performs discharge machining in a plurality of parallel wires, a machining state of the wires can be stabilized. Because the machining conditions during steady machining can be maintained constant, the machining gap becomes constant, and a plurality of narrow slits can be simultaneously machined highly accurately.
(37) Because the workpiece 8 fitted in the fitting portion 102 is fixed by the fixing screw 101, positional deviation of the workpiece 8 can be suppressed and destabilization of machining can be suppressed.
(38) The facing length WJ 21 during the cutting process needs only to be substantially constant while the workpiece 8 is actually cut, and the facing length WJ 21 can be changed since start of cutting of the workpiece retainer 10 until reaching the workpiece 8 or after the workpiece 8 has been cut. That is, areas putting the workpiece 8 therebetween in a direction along the wire electrode 2, of the area constituting the external shape of the workpiece retainer 10, can be formed substantially in parallel.
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Second Embodiment
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Third Embodiment
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(46) When the materials of the workpiece 8 and the workpiece retainer 10 are the same and the facing length WJ 21 during machining is constant, a machining gap between the wire electrode 2 and the workpiece 8 becomes substantially constant, and highly accurate machining can be realized. However, in practice the material of the workpiece 8 is a processing resistant material, and it is general to select an easily obtainable material for the workpiece retainer 10 from a viewpoint of decreasing the production cost.
(47) As a basis of selection of the material of the workpiece retainer 10, it is important to select a material preferably having the same electric discharge machining characteristics (a machining speed) as those of the material of the workpiece 8. However, because the same material cannot be selected, it is difficult to have the same electric discharge machining characteristics.
(48) For example, when the material of the workpiece retainer 10 has better electric discharge machining characteristics than those of the material of the workpiece 8, a change in the facing length W 22 of the remaining workpiece 8 becomes dominant with respect to a machining result. When the shape of the workpiece 8 is cylindrical as shown in the drawings, the facing length W 22 changes according to a machining depth. By increasing the pulse frequency of the machining power supply 6 as the facing length W 22 increases, a constant machining amount is maintained, and the machining gap can be maintained constant.
(49) On the other hand, when the material of the workpiece 8 has better electric discharge machining characteristics than those of the material of the workpiece retainer 10, a change in a facing length J 23 of the remaining workpiece retainer 10 is dominant with respect to the machining result. In this case, when the shape of the workpiece 8 is cylindrical, by decreasing the pulse frequency of the machining power supply 6 as the facing length W 22 increases, the machining gap can be maintained constant.
(50) Generally, however, the easily obtainable material has better electric discharge machining characteristics than those of the material of the workpiece 8, and thus by increasing the pulse frequency of the machining power supply 6 as the facing length W 22 increases, a constant machining amount is maintained and the machining gap can be maintained constant.
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(52) As the cause of the shape error, it is conceivable that the machining efficiency decreases as the facing length W 22 between the workpiece 8 and the wire electrode increases, in the facing length WJ 21 between the workpiece retainer 10 including the workpiece 8 and the wire electrode 2, thereby decreasing a substantial machining allowance. Therefore, in the shape of the machining groove 81, the groove width decreases at a position where the facing length W 22 between the workpiece 8 and the wire electrode is large, and the machining efficiency relatively increases and the groove width increases at a position where the facing length W 22 of the workpiece 8 and the wire electrode is small.
(53)
(54) When the material of the workpiece 8 has better electric discharge machining characteristics (a machining speed than those of the material of the workpiece retainer 10, the tendency of the groove shape shown in
(55)
(56) It is assumed that a maximum value A and a minimum value B of the pulse frequency have been acquired in advance by basic experiments. When the facing length W 22 between the workpiece 8 and the wire electrode 2 at the time of machining the workpiece 8 is the largest, the largest pulse frequency that does not cause wire breakage is generally selected for the frequency A. The machining gap at that time is assumed to be “a”.
(57) Such a frequency that the machining gap becomes “a” at the time of machining the workpiece retainer 10 is selected for the pulse frequency B. Under the same machining conditions, the machining gap at the time of machining the workpiece retainer 10 is larger than that at the time of machining the workpiece 8, and thus the pulse frequency B generally needs to be set smaller than the pulse frequency A.
(58) The facing length W 22 between the workpiece 8 and the wire electrode 2 changes according to the machining progressing position. However, when the cross sectional shape of the workpiece 8 is ascertained, the facing length W 22 can be calculated in advance. When it is assumed that the maximum value of the facing length W 22 between the workpiece 8 and the wire electrode 2 is Lmax, the pulse frequency corresponding to the facing length L is calculated based on the following equation (1).
Pulse frequency=B+(A−B)L/Lmax (1)
(59) The pulse frequency can be calculated before machining, or calculated during machining. For example, the calculated pulse frequency is stored in a storage unit 50 shown in
(60) The configuration can be such that in a section from start of a cutting process until machining is stabilized, the control unit 51 gradually increases the pulse frequency and the feed rate of the wire electrode 2 in a state where a ratio between the pulse frequency and the feed rate of the wire electrode 2 is maintained. In this case, the control unit 51 functions as an increasing unit that increases the pulse frequency and the feed rate of the wire electrode 2.
(61)
INDUSTRIAL APPLICABILITY
(62) As described above, the workpiece retainer, the wire electric discharge machining device, the thin-plate manufacturing method, and the semiconductor-wafer manufacturing method according to the present invention are useful for realizing highly accurate groove machining in a multi-parallel manner.
REFERENCE SIGNS LIST
(63) 1 wire bobbin
(64) 2 wire electrode
(65) 2a cutting wire portion
(66) 3a to 3d guide roller
(67) 5 wire discharge roller
(68) 6 machining power supply
(69) 7A, 7B power feed contact
(70) 8 workpiece
(71) 8a notch
(72) 10 workpiece retainer
(73) 21 facing length WJ
(74) 22 facing length W
(75) 23 facing length J
(76) 50 storage unit
(77) 51 control unit
(78) 61 machining power-supply unit
(79) 71 power feed contact unit
(80) 80 machining fluid nozzle
(81) 81 machining groove
(82) 82 machining pitch width
(83) 101 fixing screw
(84) 102 fitting portion
(85) 104 divided surface
(86) 105 lid
(87) 110 workpiece retainer
(88) A pulse frequency
(89) B pulse frequency
(90) Lmax facing length