RESISTANCE CHANGE ELEMENT AND METHOD FOR MANUFACTURING SAME

Abstract

The forming voltage of a resistance change element used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film 12 is sandwiched between a lower electrode 11 and an upper electrode 14, an island/particle-like region of amorphous aluminum oxide or aluminum oxycarbide 13 is formed on the metal oxide film 12. Because an oxide deficiency, serving as the nucleus of a filament for implementing an on/off operation of the resistance change element, is formed from the beginning under the island- or particle-like aluminum oxide or the like, the conventional creation of an oxide deficiency by high-voltage application in the initial period of forming can be eliminated. Such a region can be fabricated using a small number of cycles of an ALD process.

Claims

1. A variable resistance device, comprising: a film of metal oxide disposed between a first electrode and a second electrode, wherein island-shaped or particulate objects of amorphous aluminum oxide or aluminum oxycarbide are distributed between the first electrode and the metal oxide film.

2. The variable resistance device according to claim 1, wherein an average particle size of each of the island-shaped or particulate objects is from 0.1 nm to 0.6 nm.

3. The variable resistance device according to claim 1, wherein an absolute value of free energy for formation of oxides of at least one element included in the metal oxide is smaller than an absolute value of free energy for formation of oxides of aluminum oxide in at least a partial range of a temperature range from 0° C. to 400° C.

4. The variable resistance device according to claim 1, wherein the metal oxide includes at least one element selected from the group consisting of titanium (Ti), tantalum (Ta), niobium (Nb), zirconium (Zr), and hafnium (Hf).

5. A method for manufacturing a variable resistance device, comprising: forming a first electrode; forming a layer of metal oxide on the first electrode; forming island-shaped or particulate objects of amorphous aluminum oxide or aluminum oxycarbide on the layer of metal oxide, the island-shaped or particulate objects being formed by starting deposition of amorphous aluminum oxide or aluminum oxycarbide on the layer of metal oxide and ceasing the deposition before mutually isolated regions formed at an early stage of the deposition extend laterally during the deposition to merge into a form of a continuous film; and forming a second electrode on the layer of metal oxide and the island-shaped or particulate objects.

6. The method for manufacturing the variable resistance device according to claim 5, wherein the deposition is carried out by atomic layer deposition (ALD).

7. The method for manufacturing the variable resistance device according to claim 6, wherein the number of ALD cycles carried out in the deposition by the ALD is equal to or smaller than three cycles.

8. The method for manufacturing the variable resistance device according to claim 6, wherein the deposition by the ALD is carried out with trim ethyl aluminum.

9. The method for manufacturing the variable resistance device according to claim 8, wherein the deposition by the ALD is carried out at a temperature from 0° C. to 400° C.

10. The method for manufacturing the variable resistance device according to claim 9, wherein the deposition by the ALD is carried out at a temperature from 22° C. to 300° C.

11. The method for manufacturing the variable resistance device according to claim 5 wherein the metal oxide includes at least one element selected from the group consisting of titanium (Ti), tantalum (Ta), niobium (Nb), zirconium (Zr), and hafnium (Hf).

Description

BRIEF DESCRIPTION OF DRAWINGS

[0027] FIG. 1 is a schematic cross-sectional view of a variable resistance device according to an embodiment of the present invention.

[0028] FIG. 2 is a schematic cross-sectional view of a variable resistance device of type 1T-1R according to the embodiment of the present invention.

[0029] FIG. 3 illustrates manufacturing steps of the variable resistance device according to the embodiment of the present invention.

[0030] FIG. 4 illustrates results of changes in resistivity of TiO.sub.2 film relative to film forming temperatures of ALD according to the embodiment of the present invention.

[0031] FIG. 5 illustrates results of changes in resistivity of the TiO.sub.2 film relative to the number of ALD cycles according to the embodiment of the present invention.

[0032] FIG. 6 is a schematic diagram for explaining a difference in mechanism for oxygen vacancy and electron generation between three cycles or less and four cycles or more of ALD according to the embodiment of the present invention.

[0033] FIG. 7 is schematic diagrams of forming filaments with amorphous aluminum oxide according to the embodiment of the present invention.

[0034] FIG. 8 illustrates a variation characteristic of forming voltage among elements according to the embodiment of the present invention.

[0035] FIG. 9 illustrates reliability of a resistive random access memory that does not include amorphous aluminum oxide relative to the number of voltage cycles according to the embodiment of the present invention.

DESCRIPTION OF EMBODIMENTS

[0036] A variable resistance device and a method for manufacturing a variable resistance device according to an embodiment of the present invention will be described below by referring to the accompanying drawings. For convenience of viewing, sizes and ratios of constituent components are changed appropriately in the drawings. The following description mainly relates to a resistive random access memory, as it is a representative use of the variable resistance device, but as a matter of course, the variable resistance device can be applied to other uses without losing generality.

[0037] FIG. 1 is a schematic cross-sectional view of a resistive random access memory 10 according to an embodiment of the present invention. The resistive random access memory 10 includes a metal oxide film 12 provided between an upper electrode 14 and a lower electrode 11. Amorphous aluminum oxide or aluminum oxycarbide 13 is distributed in an island-shaped or particle-shaped formation having an average particle size from 0.1 nm to 0.6 nm between the upper electrode 14 and the metal oxide film 12.

[0038] FIG. 2 is a schematic cross-sectional view of a resistive random access memory 10 of type 1T-1R according to the embodiment of the present invention. A transistor 17 is formed on a silicon substrate 15 that is divided by electrical isolation 16. The transistor 17 includes a source (S) and a drain (D) formed by a generally COMS process. A ground line 20 is formed on a contact plug 19 formed in an interlayer insulating film 18 on the source (S). An interconnect line 21 is formed on another contact plug 19 formed in the interlayer insulating film 18 on the drain (D). A contact plug 23 is formed in an interlayer insulating film 22 on the interconnect line 21. The lower electrode 11 of the resistive random access memory 10 is then formed on the contact plug 23. A contact plug 25 is formed penetrating through the upper electrode 14 of the resistive random access memory 10 having been formed as described above. A bit line 26 is formed on the contact plug 25 through the interlayer insulating film 24.

[0039] FIG. 3 illustrates manufacturing steps of the resistive random access memory. In A of FIG. 3, the lower electrode 11 is formed on the contact plug 23 that has been formed in the interlayer insulating film 22. The lower electrode 11 is formed by stacking an adhesion layer and a conductive layer. The adhesion layer is made of Ti or chromium (Cr). The conductive layer can be made of a material ordinarily known in the art. Examples of the material for forming the conductive layer include metal materials, such as aluminum (Al), Pt, gold (Au), silver (Ag), Cu, nickel (Ni), molybdenum (Mo), Ta, tungsten (W), or alloys of these metal materials, or conductive oxides, such as indium tin oxide (ITO) or zinc oxide (ZnO). The conductive layer may be formed by stacking two or more layers, for example, by plating the surface of the conductive layer with a metal material.

[0040] The metal oxide film 12 is formed as illustrated in B of FIG. 3. The metal oxide film 12 is made of a material in which at least an element included in the metal oxide film has free energy for formation of oxides larger than free energy for formation of oxides of Al.sub.2O.sub.3, at least in a partial range of a temperature range from 0° C. to 400° C. (see TABLE 1). Naturally, the forming is carried out in a temperature range that satisfies the magnitude relationship mentioned above, that is, [free energy for generating metal oxide (at least an element in the metal oxide film 12)]>[free energy for generating metal oxide (Al.sub.2O.sub.3)] (or in the temperature range in which oxygen vacancy is generated on the metal oxide film 12).

[0041] The metal oxide film 12 may be made of a material that includes at least an element selected from the group consisting of Ti, Ta, Nb, Zr, and Hf Such a metal oxide film 12 exhibits an excellent insulating characteristic in some manufacturing conditions, so that oxygen vacancy cannot easily be formed in the metal oxide film 12. Therefore, a high forming voltage needs to be applied to establish forming by the oxygen vacancy. In addition, forming is established randomly at various locations with large variations among memories.

[0042] The inventors of the present application have repeatedly examined to solve this problem to find that a TiO.sub.2 film changes from insulator to conductor at a relatively early stage of an aluminum oxide film deposition by ALD with TMA precursor and a H.sub.2O gas on a TiO.sub.2 film that is in rutile structure and has a film thickness of 10 nm formed on a glass substrate. FIG. 4 illustrates changes in resistivity of TiO.sub.2 film, which is in the rutile structure, relative to ALD deposition temperature. The number of ALD cycles is fixed to 50 cycles. The resistivity is determined by a Hall measurement. The resistivity value decreases in the order from 10.sup.−2 to 10.sup.−1 Ωcm over the entire temperature range. This represents the change of TiO.sub.2 from the insulator to the conductor. FIG. 5 illustrates changes in resistivity of the TiO.sub.2 film relative to the number of ALD cycles with the ALD deposition temperature fixed at 300° C. Up to three ALD cycles, the resistivity value exhibits a measurement-limit insulating characteristic, but at four ALD cycles, the resistivity value sharply drops to 10.sup.−1 Ωcm, representing conversion to the conductor. The resistivity value is in the order of 10.sup.−2 to 10.sup.−1 Ωcm after three cycles, representing that the TiO.sub.2 film remains as the conductor.

[0043] A difference between three cycles and four cycles or more is described by referring to FIG. 6. The ALD controls a film thickness of Al.sub.2O.sub.3 film by changing the number of cycles for alternately supplying the TMA precursor, and the H.sub.2O gas. The film forming speed is from 0.08 to 0.15 nm/cycle, and the formation is in the island-shaped and particulate formation and in a distributed manner up to three cycles, as illustrated in A of FIG. 6, but changes to a film after three cycles, as illustrated in B of FIG. 6. Even in the island-shaped and particulate regions, electrons are generated by introducing oxygen vacancy to the TiO.sub.2 film. This is supposedly carried out in accordance with the following mechanism. When the raw material, TMA, adheres to the surface of the TiO.sub.2 film, oxygen on the top surface of the TiO.sub.2 film reacts with Al element and CH.sub.3 group of the raw material, TMA, to generate Al.sub.2O.sub.3 and CO.sub.2 gas. Along with the generation, oxygen vacancy occurs in the TiO.sub.2 film. Formula 1 represents this reaction. This reaction is also disclosed in NON-PATENT LITERATURE 3.

2Al(CH.sub.3).sub.3+10TiO.sub.2.fwdarw.Al.sub.2O.sub.3+5Ti.sub.2O.sub.3+3CH.sub.4(g)+C.sub.2H.sub.4(g)+CO.sub.2(g)+H.sub.2(g)   [Formula 1]

[0044] Electrons do not flow up to three cycles due to a distance between adjacent oxygen vacancy locations. After three cycles, electrons begin to flow because the distance between the oxygen vacancy locations approaches to a range in which electrons can flow. Formula 1 resembles oxygen movement caused by a difference in free energy for formation of oxides when two kinds of metal oxides come to touch each other. In a temperature range from 0° C. to 400° C. of ALD deposition, the free energy for formation of oxides of Al.sub.2O.sub.3, for example, at 22° C. is −1060 kJ/mol, which is smaller than that of TiO.sub.2 in the rutile structure, −888 kJ/mol, facilitating oxygen vacancy of TiO.sub.2. As illustrated in TABLE 1 that lists the free energy of metal oxides for oxide generation, a similar phenomenon as in the case of TiO.sub.2 film occurs in terms of oxygen vacancy when the film of hafnium oxide (HfO.sub.2), zirconium oxide (ZrO.sub.2), niobium oxide (NbO), or tantalum oxide (Ta.sub.2O.sub.5) is formed by ALD.

TABLE-US-00001 TABLE 1 FREE ENERGY FOR TEMPERATURE GENERATING OXIDE OXIDE (° C.) (kJ/mol) Al.sub.2O.sub.3 0 −1065 22 −1060 300 −999 400 −977 HfO.sub.2 0 −1014 22 −1010 300 −962 400 −946 ZrO.sub.2 0 −975 22 −1039 300 −989 400 −971 TiO.sub.2 0 −892 (Rutile) 22 −888 300 −838 400 −820 NbO 0 −779 22 −775 300 −728 400 −670 Ta.sub.2O.sub.5 0 −764 22 −760 300 −713 400 −696

[0045] In a temperature range from 0° C. to 400° C., amorphous Al.sub.2O.sub.3 is formed by ALD. It is generally known to persons in the art that thermal treatment at 900° C. or more is required for crystallization. In particular, low defect and high quality Al.sub.2O.sub.3 can preferably be formed in a stable manner in a film forming temperature range from 22° C. to 300° C. by ALD. If this condition is not satisfied, aluminum oxide including an impurity would be formed. Even when the H.sub.2O gas supply is insufficient or not present, amorphous aluminum oxycarbide is formed similarly in the island-shaped or particulate formation up to three cycles.

[0046] Preferably, the amorphous aluminum oxide or aluminum oxycarbide has an average particle size from 0.1 nm to 0.6 nm. If roughness becomes too large, insufficient contact with the upper electrode would occur.

[0047] According to the operation principle of the resistive random access memory, the oxide film 12 sandwiched between the lower electrode 11 and the upper electrode 14 should be an insulator, so that the metal oxide film that has turned to a conductor cannot be used. However, as described above, at the early stage of deposition of aluminum oxide or aluminum oxycarbide, the metal oxide film maintains its insulating characteristic although oxygen vacancy is present under the deposition. By using this characteristic, a resistive random access memory capable of using the oxygen vacancy formed under the above-described aluminum oxide or aluminum oxycarbide as nuclei for growing filaments for the forming can be implemented. This is an underlying idea of the inventors to allow them to conceive the present invention.

[0048] To satisfy the above condition in accordance with such an idea, the island-shaped or particulate aluminum oxide 13 is formed by up to three cycles of ALD on the metal oxide film 12, as illustrated in C of FIG. 3. The upper electrode 14 is formed as illustrated in FIG. 3D. The upper electrode 14 can be made of a material ordinarily known in the art. Examples of materials for forming such an electrode include a metal material, such as Al, Pt, Au, Ag, Cu, Ni, Mo, Ta, W, or alloys of these metal materials, or a conductive oxide, such as ITO or ZnO. These electrodes may be formed by stacking two or more layers, for example, by plating the surface of the electrodes with a metal material.

[0049] As illustrated in E of FIG. 3, a resist pattern 27 in a size of a memory is formed by an ordinary photolithography process. After etching down to the lower electrode 11 by an etching process, the resist film is peeled off to complete a resistive random access memory, as illustrated in F of FIG. 3.

[0050] FIG. 7 is a schematic cross-sectional view illustrating formation of filaments by oxygen vacancy when amorphous aluminum oxide is present (A) and not present (B). In the case of B, a large forming voltage is applied to introduce oxygen vacancy. The oxygen vacancy occurs randomly and the filaments are formed from such oxygen vacancy. As a result, a large variation occurs among memories. Specifically, the forming voltage is high in the structure of B because a high voltage is necessary for forming oxygen vacancy that serves as nuclei of the filaments on the surface of the oxide layer in the initial step of forming. In addition, the voltage necessary for forming the oxygen vacancy changes according to the film quality of the surface, that is, only a small difference in manufacturing conditions. Thus, large variations occur among chips. On the other hand, in the case of A, the oxygen vacancy is formed on the surface of the TiO.sub.2 film facing the aluminum oxide in a distributed manner. It has been found, therefore, a low forming voltage is necessary and a variation among memories is small. In other words, in the structure of A, the oxygen vacancy already exists when aluminum oxide is formed on the surface of the oxide layer. A high forming voltage is not necessary in the initial step of the forming on the contrary to the conventional structure. In addition, the variation decreases because the influence of the forming voltage on the film quality is eliminated.

[0051] The ALD has been described as a method for forming the island-shaped or particulate aluminum oxide or aluminum oxycarbide, but the method is not limited to ALD. Any method can be adopted so long as the method can control the formation of the island-shaped or particulate regions of aluminum oxide or aluminum oxycarbide in such a manner to cease the growth process before such regions extend laterally and connect with each other to form a continuous film. For example, a MOCVD method used with a supply of TMA gas can be used for growth control.

EXAMPLES

[0052] Examples of the present invention will be described below, but these examples do not limit the scope of the present invention in any way. It is, therefore, apparent to persons in the art that various changes and corrections are possible within the scope of the present invention and the range of the appended claims.

[0053] In the example, the structure similar to the resistive random access memory 10 illustrated in FIG. 1 was formed on silicon oxide (SiO.sub.2) (100 nm).

[0054] The resistive random access memory of the present example was made with an Si substrate by forming an SiO.sub.2 layer having a thickness of 100 nm by surface oxidization of an Si substrate, followed by forming a Ti film, as an adhesion layer, having a film thickness of 10 nm by DC sputtering at room temperature with Ar gas at 0.1 Pa and sputtering power of 200 W. The lower electrode 11 was formed by forming a Pt film having a film thickness of 100 nm as a conductive film on the Ti film by DC sputtering at room temperature with Ar gas at 0.1 Pa and sputtering power of 200 W.

[0055] Subsequently, a TiO.sub.2 film having a thickness of about 10 nm was formed as the metal oxide film 12 on the Pt film by an ALD apparatus at a temperature in a TDMAT raw material container of 100° C., a temperature of an H.sub.2O container of 20° C., a degree of vacuum at 10 Pa, and a growth temperature of 300° C. in 200 cycles. Each cycle consists of a supply sequence of raw material: tetrakis-dimethlamido-titanium (TDMAT).fwdarw.Ar purge gas.fwdarw.H.sub.2O oxide gas.fwdarw.Ar purge gas. The TiO.sub.2 film was in the amorphous structure. Such amorphous films were treated with heat at 500° C. in an oxygen atmosphere and at 800° C. in a nitrogen atmosphere, respectively, to form anatase and rutile structures. An example of the TiO.sub.2 film in the rutile structure is described below.

[0056] Subsequently, the amorphous aluminum oxide 13 was formed on the TiO.sub.2 film in the rutile structure by an ALD apparatus at a temperature in TMA raw material container from 0° C. to 20° C., a temperature of H.sub.2O container from 0° C. to 20° C., a degree of vacuum at 10 Pa, and a growth temperature from 0° C. to 400° C. in 1 to 100 cycles. Each cycle consists of a supply sequence of raw material, TMA.fwdarw.Ar purge gas.fwdarw.H.sub.2O oxide gas.fwdarw.Ar purge gas. An example described below was made at a film forming temperature of 300° C. in three cycles.

[0057] Subsequently, the upper electrode 14 having a film thickness of 100 nm was made by depositing a Pt film through a stencil mask that includes pores each having a diameter of 100 μm by DC sputtering at room temperature, at Ar gas of 0.1 Pa, and sputtering power of 200 W.

[0058] Thus, the resistive random access memory 10 was manufactured and its characteristics were measured in an evaluation circumstance at a temperature of 25° C. in a dark place in vacuum. FIGS. 8 and 9 are graphs illustrating results of measurement of the characteristics of the resistive random access memory 10, in which FIG. 8 illustrates a variation characteristic of forming voltage between different elements and FIG. 9 illustrates a reliability characteristic.

[0059] FIG. 8 is a bar graph illustrating the variation characteristic in forming voltage among elements. Bars with relatively small checkerboard pattern represent measurement results of the resistive random access memory 10 of the present example, while bars with distributed pattern of small dots represent data of a comparative example in which no amorphous aluminum oxide is provided. The resistive random access memory that does not include the amorphous aluminum oxide exhibited a wide distribution range of the forming voltage from 1.8 to 4.5 V. To securely establish forming in the element, the forming voltage needed to be applied even in a high voltage region. On the other hand, the resistive random access memory that includes the amorphous aluminum oxide according to the present example exhibited that about 75% of the memories was concentrated at the forming voltage of 2.5 V and the distribution range of the forming voltage was much narrower than that of the comparative example data. Namely, the present example exhibited an effect of decreasing the variation of the forming voltage.

[0060] FIG. 9 illustrates the reliability characteristic of the resistive random access memory that includes amorphous aluminum oxide after the forming relative to the number of voltage cycles. A rectangular-wave voltage having an absolute value of 0.3 V and inverted polarities for every 10 msec was applied for 100 cycles. From the beginning of the repetition test until the repetition of 100 cycles was finished, a resistance difference (ratio of high resistance to low resistance), which was the important characteristic of the resistance change memory, exhibited favorable results of five-order difference with the order of 1E+3 in the low resistance region and the order of 1E+8 in the high resistance region. The five-order results were maintained after 100 cycles, representing a high reliability. On the other hand, the same cycle test was executed for the conventional capacitor that does not include aluminum oxide illustrated in FIG. 8. The result exhibited a gradual increase of low resistance values after the number of cycles exceeded 60 cycles, representing a trend that the ratio of high resistance value to low resistance value decreased to below the five-order values. In some cases, breaking a capacitor in which the high resistance value was equal to the low resistance value was recognized.

[0061] As a result, the operation of the resistive random access memory of the present invention was confirmed and the usefulness of the present invention was proved.

INDUSTRIAL APPLICABILITY

[0062] As described above, the present invention can largely contribute to improvement of the performance of the variable resistance device which is typically represented by the resistive random access memory.

REFERENCE SIGNS LIST

[0063] 10 Resistive random access memory [0064] 11 Lower electrode [0065] 12 Metal oxide film [0066] 13 Amorphous aluminum oxide or aluminum oxycarbide [0067] 14 Upper electrode [0068] 15 Silicon substrate [0069] 16 Electrical isolation [0070] 17 Transistor [0071] 18, 22, 24 Interlayer insulating film [0072] 19, 23, 25 Contact plug [0073] 20 Ground line [0074] 21 Interconnect line [0075] 26 Bit line