Method for forming doped epitaxial layer of contact image sensor

Abstract

The disclosure discloses a method for forming a doped epitaxial layer of contact image sensor. Epitaxial growth is performed in times. After each time of epitaxial growth, trench isolation and ion implantation are performed to form deep and shallow trench isolation running through a large-thickness doped epitaxial layer. Through cyclic operation of epitaxial growth, trench isolation and ion implantation, the photoresist and hard mask required at each time do not need to be too thick. In the process of trench isolation and ion implantation, the photoresist and etching morphologies are good, such that the lag problem of the prepared contact image sensor is improved. By forming the large-thickness doped epitaxial layer by adopting the method for forming the doped epitaxial layer of the contact image sensor, a high-performance contact image sensor applicable to high quantum efficiency, small pixel size and near infrared/infrared can be prepared.

Claims

1. A method for forming a doped epitaxial layer of a contact image sensor, wherein the method comprises the following steps: step 1: performing first epitaxial growth on a wafer to form a first epitaxial layer; step 2: forming first epitaxial trench isolation running through the first epitaxial layer on the first epitaxial layer; step 3: performing first ion implantation to the epitaxial layer; step 4: performing second epitaxial growth on the first epitaxial layer of the wafer to form a second epitaxial layer; step 5: forming second epitaxial trench isolation in the second epitaxial layer, the second epitaxial trench isolation running through the second epitaxial layer and connected with the first epitaxial trench isolation; step 6: performing second ion implantation to the epitaxial layer; and step 7: forming the doped epitaxial layer of the contact image sensor.

2. The method for forming the doped epitaxial layer of the contact image sensor according to claim 1, wherein after step 6, (1) third epitaxial growth is performed on the second epitaxial layer of the wafer to form a third epitaxial layer, (2) forming third epitaxial trench isolation in the third epitaxial layer, the third epitaxial trench isolation running through the third epitaxial layer and connected with the second epitaxial trench isolation, and (3) third ion implantation is performed to the epitaxial layer; then step 7 is performed.

3. The method for forming the doped epitaxial layer of the contact image sensor according to claim 1, wherein after step 6, (1) third epitaxial growth is performed on the second epitaxial layer of the wafer to form a third epitaxial layer, (2) forming third epitaxial trench isolation in the third epitaxial layer, the third epitaxial trench isolation running through the third epitaxial layer and connected with the second epitaxial trench isolation, (3) third ion implantation is performed to the epitaxial layer, (4) fourth epitaxial growth is performed on the third epitaxial layer of the wafer to form a fourth epitaxial layer, (5) forming fourth epitaxial trench isolation in the fourth epitaxial layer, the fourth epitaxial trench isolation running through the fourth epitaxial layer and connected with the third epitaxial trench isolation, (6) fourth ion implantation is performed to the epitaxial layer; then step 7 is performed.

4. The method for forming the doped epitaxial layer of the contact image sensor according to claim 1, wherein the thickness of the epitaxial layer grown at each time is smaller than 3.6 um.

5. The method for forming the doped epitaxial layer of the contact image sensor according to claim 1, wherein the dose of next ion implantation is greater than the dose of previous ion implantation.

6. The method for forming the doped epitaxial layer of the contact image sensor according to claim 1, wherein the energy of next ion implantation is greater than the energy of previous ion implantation.

7. The method for forming the doped epitaxial layer of the contact image sensor according to claim 1, wherein the dose of ion implantation at each time is within 1e12-5e13.

8. The method for forming the doped epitaxial layer of the contact image sensor according to claim 1, wherein the energy of ion implantation at each time is within 500 kev-2500 kev.

9. The method for forming the doped epitaxial layer of the contact image sensor according to claim 1, wherein the total thickness of the doped epitaxial layer of the contact image sensor formed in step 7 is greater than or equal to 5 um.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) In order to more clearly describe the technical solution of the disclosure, the drawings which need be used in the disclosure will be briefly introduced below. Apparently, the drawings described below are just some embodiments of the disclosure. Those skilled in the art may obtain other drawings according to these drawings without contributing any inventive labor.

(2) FIG. 1 is a schematic diagram of an existing method for forming a doped epitaxial layer of a contact image sensor.

(3) FIG. 2 is a schematic diagram of a method for forming a doped epitaxial layer of a contact image sensor according to one embodiment of the disclosure.

DETAILED DESCRIPTION OF THE DISCLOSURE

(4) The technical solution of the disclosure will be described below clearly and completely with reference to the drawings. Apparently, the described embodiments are partial embodiments of the disclosure, instead of all embodiments. Based on the embodiments of the disclosure, all other embodiments obtained by those skilled in the art without contributing any inventive labor shall fall into the scope of protection of the disclosure.

Embodiment 1

(5) Referring to FIG. 2, a method for forming a doped epitaxial layer of contact image sensor includes the following steps:

(6) step 1: performing first epitaxial growth on a wafer to form a first epitaxial layer;

(7) step 2: forming first epitaxial trench isolation running through the first epitaxial layer on the first epitaxial layer;

(8) step 3: performing first ion implantation to the epitaxial layer;

(9) step 4: performing second epitaxial growth on the first epitaxial layer of the wafer to form a second epitaxial layer;

(10) step 5: forming second epitaxial trench isolation in the second epitaxial layer, the second epitaxial trench isolation running through the second epitaxial layer and connected with the first epitaxial trench isolation;

(11) step 6: performing second ion implantation to the epitaxial layer;

(12) step 7: forming the doped epitaxial layer of the contact image sensor.

(13) In the method for forming the doped epitaxial layer of contact image sensor provided by embodiment 1, epitaxial growth is performed in times. After each time of epitaxial growth, trench isolation and ion implantation are performed to form deep and shallow trench isolation running through a large-thickness doped epitaxial layer (with thickness generally more than 7 um). Through cyclic operation of epitaxial growth, trench isolation and ion implantation, the photoresist and hard mask required at each time do not need to be too thick. In the process of trench isolation and ion implantation, the photoresist and etching morphologies are good, avoiding the situation that the morphologies are poor due to high depth-to-width ratio of deep trench isolation directly formed in the photolithography and etching process, such that the lag problem of the prepared contact image sensor (CIS) is improved. By forming the large-thickness doped epitaxial layer (with thickness generally more than 7 um) by adopting the method for forming the doped epitaxial layer of the contact image sensor, a high-performance contact image sensor (CIS) applicable to high quantum efficiency (QE), small pixel size (smaller than 1.0 um) and near infrared/infrared (NIR/IR) can be prepared.

Embodiment 2

(14) Based on the method for forming the doped epitaxial layer of contact image sensor provided by embodiment 1, after step 6, (1) third epitaxial growth is performed on the second epitaxial layer of the wafer to form a third epitaxial layer, (2) forming third epitaxial trench isolation in the third epitaxial layer, the third epitaxial trench isolation running through the third epitaxial layer and connected with the second epitaxial trench isolation, and (3) third ion implantation is performed to the epitaxial layer;

(15) then step 7 is performed.

Embodiment 3

(16) Based on the method for forming the doped epitaxial layer of contact image sensor provided by embodiment 1, after step 6, (1) third epitaxial growth is performed on the second epitaxial layer of the wafer to form a third epitaxial layer, (2) forming third epitaxial trench isolation in the third epitaxial layer, the third epitaxial trench isolation running through the third epitaxial layer and connected with the second epitaxial trench isolation, (3) third ion implantation is performed to the epitaxial layer, (4) fourth epitaxial growth is performed on the third epitaxial layer of the wafer to form a fourth epitaxial layer, (5) forming fourth epitaxial trench isolation in the fourth epitaxial layer, the fourth epitaxial trench isolation running through the fourth epitaxial layer and connected with the third epitaxial trench isolation, (6) fourth ion implantation is performed to the epitaxial layer;

(17) then step 7 is performed.

Embodiment 4

(18) Based on the method for forming the doped epitaxial layer of contact image sensor provided by embodiment 1 to embodiment 3, the thickness of the epitaxial layer grown at each time is smaller than 3.6 um.

(19) Preferably, the dose of next ion implantation is greater than the dose of previous ion implantation.

(20) Preferably, the energy of next ion implantation is greater than the energy of previous ion implantation.

(21) Preferably, the dose of ion implantation at each time is within 1e12-5e13.

(22) Preferably, the energy of ion implantation at each time is within 500 kev-2500 kev.

(23) Preferably, the total thickness of the doped epitaxial layer of the contact image sensor formed in step 7 is greater than or equal to 5 um.

(24) What are described above are just exemplary embodiments of the disclosure, which are not used to limit the disclosure. Any modification, equivalent replacement, improvement and the like made within the spirit and rule of the disclosure shall be included in the scope of protection of the disclosure.