Converting large input analog signals in an analog-to-digital converter without input attenuation
09831889 · 2017-11-28
Assignee
Inventors
Cpc classification
H03M1/68
ELECTRICITY
H03K5/08
ELECTRICITY
International classification
H03K5/08
ELECTRICITY
H03M1/46
ELECTRICITY
Abstract
In an example embodiment, an apparatus includes: a first sampling capacitor and a comparator to compare a sum voltage at a first input terminal to a voltage level at a second input terminal according to a thermometer cycle. The sum voltage is based at least in part on an analog input voltage and a divided reference voltage, where the analog input voltage and the reference voltage (V.sub.REF) are of a first voltage range and the divided reference voltage is according to
to enable the comparator to operate at a second voltage range, the second voltage range less than
and M is a number of bits of a digital output to be decided in the thermometer cycle and is greater than one.
Claims
1. An apparatus comprising: a first sampling capacitor; a comparator to compare a sum voltage at a first input terminal to a voltage level at a second input terminal according to a thermometer cycle, the sum voltage based at least in part on an analog input voltage and a divided reference voltage, wherein the analog input voltage and the reference voltage (V.sub.REF) are of a first voltage range and the divided reference voltage is according to
2. The apparatus of claim 1, wherein the apparatus is to add a common mode voltage to the first input terminal and the second input terminal of the comparator.
3. The apparatus of claim 2, further comprising: a buffer to output the common mode voltage; a first switch coupled to an output of the buffer to couple the common mode voltage to the first input terminal; and a second switch coupled to the output of the buffer to couple the common mode voltage to the second input terminal.
4. The apparatus of claim 1, further comprising a second clamp circuit coupled to the second input terminal of the comparator, the second clamp circuit to match the first clamp circuit.
5. The apparatus of claim 4, wherein the first clamp circuit comprises a transistor having a first terminal coupled to the first input terminal of the comparator, a second terminal coupled to the first sampling capacitor, and a gate terminal biased to a voltage level to set a voltage limit of the first input terminal of the comparator, the voltage level commonly coupled with a gate terminal of a second transistor of the second clamp circuit.
6. The apparatus of claim 5, wherein the first and second transistors have a first breakdown voltage.
7. The apparatus of claim 6, wherein transistors of the comparator have a second breakdown voltage, the second breakdown voltage less than the first breakdown voltage.
8. The apparatus of claim 1, wherein the first sampling capacitor comprises: a plurality of first capacitors to switchably couple between the first input terminal and a selected one or more of an input node to couple to the incoming analog voltage, a reference voltage node and a ground voltage node.
9. The apparatus of claim 8, further comprising a second sampling capacitor coupled to the second input terminal of the comparator.
10. The apparatus of claim 9, wherein the first sampling capacitor is associated with at least a plurality of most significant bits (MSBs) of the digital output, and the second sampling capacitor is associated with at least a least significant bit of the digital output.
11. The apparatus of claim 9, wherein the second sampling capacitor comprises: a plurality of second capacitors to switchably couple between the second input terminal and a selected one or more of the reference voltage node and the ground voltage node.
12. A method comprising: sampling an input analog signal to obtain a sum voltage corresponding to a difference between a common mode voltage and the input analog signal; adding a portion of a reference voltage (V.sub.REF) to the sum voltage to obtain an updated sum voltage, the portion of the reference voltage according to
13. The method of claim 12, further comprising: outputting the at least one bit of the digital output having a first value if the final sum voltage exceeds the common mode voltage; and outputting the at least one bit of the digital output having a second value if the final sum voltage is less than the common mode voltage.
14. The method of claim 12, further comprising adding ((2.sup.M−1)×V.sub.REF)/2.sup.M before adding one or more other reference voltage portions of V.sub.REF/2.sup.Bit to the sum voltage before clamping, wherein M is a number of bits of the digital output to be decided in a thermometer cycle and is greater than 1.
15. The method of claim 14, further comprising if the final sum voltage exceeds the common mode voltage, reducing the final sum voltage by V.sub.REF/2.sup.M.
16. The method of claim 15, further comprising iteratively reducing the final sum voltage by V.sub.REF/2.sup.M until a second incrementing variable at least equals 2.sup.M−1.
17. The method of claim 14, further comprising sampling the incoming analog signal having a first voltage range and comparing the final sum voltage to the common mode voltage at a second voltage range, the second voltage range less than or equal to ½.sup.M of the first voltage range, wherein M is a number of bits of the digital output.
18. The method of claim 14, further comprising: sampling the incoming analog signal via a first sampling capacitor associated with a plurality of most significant bits of the digital output; and adding the portion of the reference voltage via a second sampling capacitor associated with at least one least significant bit of the digital output.
19. The method of claim 12, further comprising clamping the updated sum voltage to the clamp voltage via a clamp circuit coupled between a first sampling capacitor and a comparator, the first sampling capacitor to sample the incoming analog signal and the comparator to compare the final sum voltage to the common mode voltage.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
(8) Referring now to
(9) As illustrated in
(10) The voltage level stored on the capacitors of CDAC 110 is provided to first input terminal I.sub.1 via a clamp circuit 115 implemented by a pair of MOSFETs M1 and M2, which may be implemented as N-channel MOSFET (NMOS) devices. In different embodiments, other clamp circuits may be used to limit the clamped voltage without consuming current/charge. For example, a buffer circuit with a maximum output/supply may be used. Note that while clamp circuit 115 is provided to limit the incoming voltage to no more than a predetermined level (namely a clamp voltage level that depends on the gate voltage and the threshold voltage of the NMOS devices), understand that such voltage limiting is not an input attenuation, as would be effected by providing resistors or other controllable impedances to attenuate the incoming analog signal, since the input signal is still fully stored in CDAC 110, and no attenuation or loss of charge happens due to the clamping. In addition, the incoming analog signal is not reduced by other means before being provided to ADC 100. Note that clamp circuit 115 only limits the voltage level to a maximum clamp level. Clamp circuit 115 normally passes low voltage input levels exactly with the same value. If the input signal exceeds the clamping limit, the clamp limits the signal on the other side to the clamp level. There is no reduction on the input signal, only limiting which occurs for high voltage levels. If there was any reduction, that would be considered as attenuation.
(11) As illustrated, NMOS M1 has a drain terminal coupled to CDAC 110 and a source terminal coupled to first input node I.sub.1, and a gate terminal commonly coupled with NMOS M2, which couples between a dummy capacitor Cx and second input terminal I.sub.2. Note that M2 is optional. Since this side is never switched to anything other than a common mode voltage (V.sub.CM), if V.sub.CM is less than the comparator input breakdown voltage, no clamping is needed. Yet it may be included to match both branches. As further illustrated, ADC 100 further includes a buffer 120 configured to provide the common mode voltage (V.sub.CM) via controllable switching of switches S.sub.A and S.sub.B (which in an embodiment may be implemented as MOSFETs). Up until now, the Cx is not used for any reference switching. If the LSB switching is not done on this side as embodiments detail later, Cx can be sized at any random value. However, it may be sized to be equal to total capacitance of CDAC 110, to cancel the effect of charge sharing due to S.sub.A and S.sub.B switches (any charge leaked by these two switches, should produce an equal voltage on I.sub.1 and I.sub.2 if both have same capacitance). Another option to reduce area would be to size S.sub.A, M2 and Cx to be exact same ratio smaller than S.sub.B, M1 and CDAC. However because of process variations, this may add additional random error.
(12) To clarify, comparator 130, S.sub.A, S.sub.B and buffer 120 are implemented using lower voltage breakdown transistors, and M1, M2 and switches S.sub.0-S.sub.n-1 are implemented using higher voltage breakdown transistors. That is, in embodiments described herein, CDAC 110 and clamp circuit 115 are implemented using transistors having a high breakdown voltage, e.g., of 5.5 volts, that is higher than or equal to the maximum input analog and reference voltages. Instead, the remaining transistors of ADC 100 may be implemented using transistors that have a much smaller breakdown voltage, e.g., 3.6 volts (or even 1.2 volts if MSB thermo switching described in later embodiments is used), which may significantly reduce both area and circuit delay. This is the case, as using embodiments described herein, voltage levels, both of the incoming analog signal and reference voltages, are limited to proportionally lower values before being provided to the remaining circuitry of the ADC to enable this low voltage operation. Note that these different transistors may be of different sizes and breakdown levels depending on process technology (process allow smaller transistor to be used for lower breakdown levels). With embodiments described herein, understand that transistors having a larger breakdown voltage may be fabricated with thicker oxide layers which increase minimum size of the transistor allowed in the design. As such, by reducing the number of transistors that interact with higher voltages, smaller area and faster circuit (or smaller circuit delay) is realized.
(13) As comparator 130 may be configured to switch at a voltage around the common mode voltage, using a common mode voltage that is smaller than the breakdown voltage of the comparator (plus some margin to account for variations like common mode voltage variations, clamping variations described next, comparator offset and sensitivity variations) and clamping the DAC voltage to that level plus enough margin, reduces the maximum voltage seen by the comparator, e.g., by approximately one half (plus the margin mentioned before). In this way, comparator 130 may use lower breakdown transistors, e.g., 3.6 volts instead of 5.5 volts (thinner transistor which are allowed to be smaller in size) options to realize a smaller comparator area.
(14) Given that CDAC 110 is charge based, clamping can be controlled to be non-leaky for the input, otherwise information stored on CDAC 110 will be lost. Note that because there is no DC path to a supply through transistors M1 and M2 drain and source terminals, no current (or charge) will flow from CDAC 110 (other than possible minor undesired parasitic charge distribution, which can be taken care of by design to be considerably smaller than ADC error). At the same time, transistors M1 and M2 clamp their source voltage (coupled to the comparator input nodes) to their gate voltage minus its V.sub.GS (˜V.sub.TH as I.sub.D=0A), when the input voltage is higher than this limit. Note that the clamp gate voltage (V.sub.CLAMP+V.sub.TH) is designed to be higher than the common mode voltage but lower than the breakdown voltage of thinner transistors of comparator 130, to enable use of thinner transistors in comparator 130. In an embodiment, a maximum common mode voltage can be set at 5.5V/2=2.75V (using a thick clamp transistor with a breakdown voltage of 5.5V). With a thin transistor that has a breakdown voltage of 3.8V, a clamping limit may be set in between these two voltages. Also notice that transistors M1 and M2 may see the largest voltage difference during the conversion process, so their breakdown voltages are as high as the largest input or reference voltage (so usually a thick transistor is used to implement M1 and M2).
(15) Notice that placement of a common mode circuit implemented as buffer 120 and associated switches S.sub.A and S.sub.B at an output of clamp circuit 115 (as they generate a level at common mode only) reduces the SAR area even further, because it allows the use of thin transistors to design the buffer. The common mode buffer may also be placed before M1 and M2 (at the capacitor side), but this will cause the parasitic at the comparator side to have larger effects, and thinner transistors then cannot be used for the design of the common mode buffer, making it larger in area.
(16) Referring now to
(17)
is added.
(18) Control next passes to diamond 220 to determine whether the resulting sum voltage is greater than a clamp voltage (V.sub.CLAMP). Note that this determination may occur by application of the sum voltage to the drain terminal of the clamp circuit. Based on the comparison, a clamp sum voltage (V.sub.CLMPSUM) is either set to the sum voltage value or the clamp voltage value (in a given one of blocks 222 and 224). In an embodiment, the clamp voltage may be set to 3.3 volts (thus higher than 5.5V/2=2.75V with some margins). Thus the clamp circuit provides an output via its source terminal that is limited to the clamp voltage value.
(19) In any event, control passes next to diamond 275 to determine whether the clamp sum voltage is greater than the common mode voltage. In an embodiment, this comparison may be performed by the comparator, which thus receives the sum voltage (namely the clamp sum voltage) via a first input terminal and the common mode voltage via a second input terminal. If the clamp sum voltage does not exceed the common mode voltage, control passes to block 280 where a given bit element of the comparator decision, namely D.sub.N-Bit, is set equal to one. As an example, this element may be set in a temporary storage such as a comparator register coupled to an output of the comparator. In one embodiment, such register may be implemented as a shift register to receive, store and shift incoming bits as the comparator determines the different bits of the decision. Note that in an embodiment, in this first iteration where the bit value equals 1, this decision bit corresponds to the most significant bit (MSB) of the comparator decision. Next the bit value is incremented (block 290) and the operations proceed for a next bit of another binary cycle, until the bit value reaches N+1 (as determined at diamond 295), at which point the N-bit decision is completed.
(20) Note further with regard to
(21)
from this value. Then the given decision bit (D.sub.N-Bit) is set equal to zero (at block 286). In this way, method 200 proceeds to generate an N-bit decision in N binary cycles, while ensuring that the voltage provided to the comparator is not greater than the clamp voltage value, enabling smaller-sized transistors to be used within the ADC.
(22) The common mode voltage may be controlled to be substantially at mid-range to ensure that the CDAC voltage even after a maximum step addition
(23)
always stays within the supply range. Where a maximum step is reduced, the common mode voltage (which is the maximum voltage after clamping seen by comparator 130) may be reduced also, thus allowing the use of a smaller clamp limit and thus the comparator and common mode circuit to be designed with even thinner transistors (e.g., transistors that break down at 1.4 volts instead of 3.6 volts).
(24) In some embodiments, ADC 100 is controlled to operate in thermo steps as opposed to traditional binary steps for, at least, MSB bits conversion. Instead of covering the reference range by dividing it by two
(25)
in a first cycle, CDAC 110 divides the reference range by a larger number (2.sup.M, where M is the number of MSB bits in thermo cycle) and uses proper divided steps
(26)
to scan the reference range.
(27) More specifically, in an embodiment operation begins by adding
(28)
to the sampled value (A.sub.IN−V.sub.CM), and during each thermo cycle CDAC 110 removes a divided step
(29)
until comparator 13U toggles. In an embodiment in which thermo conversion cycles are used, CDAC 100 may be implemented with unit capacitors having substantially equally sizes, rather than other weighting schemes such as binary or radix schemes (for, at least, MSB bits conversion). In a particular embodiment, the unit capacitance of each of the capacitors of CDAC 100 may be between approximately 1.25 and 2 picoFarads with M=2.
(30) In an embodiment, note that in a thermo cycle M bits are decided (as opposed to one bit in binary cycle); and a number between 1 and 2.sup.M−1 cycles (as opposed to M cycles) are performed until the conversion is made, as shown in Table 1, which compares the maximum number of cycles for a conversion to finish according to an embodiment to the number of cycles required by a conventional SAR ADC to convert the same number of bits.
(31) TABLE-US-00001 TABLE 1 Number of MSB SAR EMBODIMENT Extra Cycles 1 MSB 1 Cycle 1 Cycle 0 Cycle 2 MSB 2 Cycle 3 Cycle 1 Cycle 3 MSB 3 Cycle 7 Cycle 4 Cycle M MSB M Cycle 2.sup.M − 1 Cycle 2.sup.M − M − 1 Cycle
(32) In an embodiment, the maximum conversion step (and so minimum common mode voltage) for binary step operation is
(33)
(5.5/2 for a 5.5V reference signal). This maximum conversion level may reduce to 1.375V for 2 thermo bits, and to 0.6875V for 3 thermo steps. It can be seen that by converting at least two MSB bits in thermo steps, the common mode voltage can be reduced to be less than 1.4 volts, which allows small transistors that break down at 1.4 volts to be used to design the comparator and the common mode buffer and switches to reduce the circuit area.
(34) In an embodiment, if it is desired to fix the number of cycles for MSB bits conversion in thermo implementation, idle cycles can be added for the rest of the cycles after an early decision is made up to the maximum number of cycles required. Note that while the number of cycles may increase (as compared to binary cycles), the maximum voltage step in the thermo cycle is reduced, resulting in a smaller maximum settling time for the SAR ADC switching. As such, faster cycles can be used, to at least partially compensate for the additional conversion cycles.
(35) Referring now to
(36) Starting first with
(37) Note that in the conversion stages shown at steps 310.sub.1-310.sub.3 of
(38) With particular reference to the first conversion step 310.sub.1 for the first incoming analog signal AIN1, note that after this single conversion step, the sampled voltage is determined to be less than the common mode voltage. As such, a decision for the multiple bits of this analog input signal occurs in this single conversion step, and leads to a decision result of “11.”
(39) For the other two input analog signals AIN2 and AIN3, at conversion step 310.sub.1, the sampled voltage exceeds the common mode voltage. As such, another conversion step occurs in which a portion of the reference voltage, namely V.sub.REF/4, is removed as shown at conversion step 310.sub.2 of
(40) In an embodiment, the maximum step is reduced to
(41)
and the common mode voltage minimum can be reduced to the same (as shown in Equation [1] and [2] below, where V.sub.REF=MAX (A.sub.IN)=V.sub.DD and MIN (A.sub.IN)=V.sub.SS to allow for maximum voltage range utilization), allowing the use of smaller sized transistors in the comparator and common mode voltage circuits.
(42)
(Where V.sub.SS is assumed to be 0, and V.sub.REF assumed maximum (equal to V.sub.DD))
(43)
(Where V.sub.SS assumed to be 0, V.sub.REF assumed maximum (equal to V.sub.DD)).
(44) Referring now to
(45)
is added to the sum voltage (block 218). In an embodiment in which the thermo cycle decides two bits, M is set equal to 2, such that 3 V.sub.REF/4 is added to the sum voltage at block 218. Next, the sum voltage may be clamped as discussed above (shown at diamond 220 and blocks 222/224). Next it is determined at diamond 228, whether the clamp sum voltage value exceeds the common mode voltage. If not, control passes to block 230 where a number of MSBs (namely D.sub.N-1:N-M bits) are set equal to the value of 2.sup.M−1−m, which in an initial iteration is equal to three (11 in binary format). In a representative example, assuming that the ADC is a 12-bit ADC such that N equals 12 and M is two bits, in this instance bits 11:10 are set to one.
(46) Still with reference to
(47) Still with reference to
(48) A traditional CDAC SAR has capacitance on both comparator ends, such as shown in
(49) In embodiments, control of comparison voltages provided to the comparator may vary. The sub-reference voltage step can be implemented at either side of the comparator. In some cases, the sub-reference voltage steps may be added/removed by switched using the CDAC that samples difference between the common mode and the input signal (refer to
(50) Referring now to
(51) The LSB CDAC will move the common mode originally sampled on it down toward the summation voltage (the voltage at MSB CDAC 110). Since the LSB needs to switch to complete at the point where the MSB has stopped, it will switch to steps of V.sub.REF/2.sup.M and lower. In order to allow LSB CDAC 140 to switch down V.sub.REF/2.sup.M steps or divisions of it, all LSB CDAC 140 switches will switch to V.sub.REF/2.sup.M instead of ground during the sampling phase and MSB conversion cycles. When the LSB CDAC 140 wants to switch down, it can switch any combination of switches S.sub.0 to S.sub.(N-M-1) to ground instead of V.sub.REF/2.sup.M, which will effectively subtract the reference level ratio of the capacitor from the common mode voltage. The division of V.sub.REF to generate V.sub.REF/2.sup.M should not affect the total SNR since it will only work on LSB, provided the V.sub.REF/2.sup.M was generated with an error smaller than an LSB. The generation of this divided level can be achieved by many means: it can be a separate DAC, a use of a bridge CDAC, or the MSB CDAC can be utilized to generate this level, with a combination of a buffered sample and hold circuit.
(52) In a conventional CDAC SAR, CDAC capacitors are switched between input voltage, reference voltage and ground. If input and reference voltages can go up to high voltages (e.g., 5.5V), all switches would be implemented with high breakdown voltage large transistors, which will also need level shifters to perform the switching control from the logic (logic is placed at low voltage supply as comparator 130). This will not only increase the area, but also possibly increase the time required to switch the transistors due to the level shifter delay, reducing the time margin left for capacitor voltage settling. For the case in
(53) It should be noted that the implementation in
(54) As discussed above, in different control techniques it is possible to control voltages provided to the comparator from one or both of the CDACs. Referring now to
(55) As illustrated in
(56) Referring now to
(57) In yet other embodiments, switching of the inputs to both input terminals of the comparator can occur, as shown in
(58) In some implementations, an application may have external input attenuation to be able to convert even greater signal levels. For example, while an embodiment enables conversion of signals up to 5.5V using a circuit built mostly from small transistors that break down at 3.6V (or even 1.4V) using embodiments detailed here, a customer or other user may input a 20V signal and attenuate it, e.g., by 4 (20/4=5V) so that a converter as described herein can be used.
(59) Referring now to
(60) As illustrated, MCU 602 includes a controller core 610 which, in embodiments may be implemented as an 8051-based controller. Power is provided within MCU 602 by way of one or more voltage regulators 605. In turn, a system clock generator 620, which may include one or more oscillators, is configured to generate one or more system clocks for use within MCU 602. Also present is a universal serial bus (USB) peripheral interface 630. As illustrated, all of controller core 610, system clock generator 620 and USB peripheral interface 630 are coupled to a bus 640, which in an embodiment may be a given parallel or other type of bus or other interconnect.
(61) In turn, bus 640 couples to digital peripheral circuitry 650. In different embodiments, such digital peripheral circuitry 650 may include interfaces for UARTs, I.sup.2C buses, SPI buses and so forth. In turn, digital peripheral circuitry 650 couples to one or more port driver 670.sub.0-670.sub.n, each of which may communicate off chip with other devices such as sensors or so forth. In addition, incoming communications also may be provided to analog peripheral circuitry 660.
(62) In embodiments, analog peripheral circuitry 660 may include an ADC 668 as described herein to enable digital conversions to be performed with relatively low power, high bandwidth, and low area consumption. Note that a supply voltage and an internal reference voltage, generated by an internal reference generator 669, may further couple to ADC 668. In addition, a multiplexer 665 provides a selected analog signal, e.g., received from a selected one of ports 670 to ADC 668 to effect a digital conversion. In addition, thermal information may also be another example of analog input by way of one or more temperature sensors 664 as an analog voltage from which a digital value can be generated. Understand the digitized values may be provided to selected destinations, such as controller core 610 or other destinations. Understand while shown at this high level in the embodiment of
(63) Understand that while the above discussion relates specific embodiments many variations and alternatives are possible. For example, understand that while reference and input signals have been described herein with a voltage swing from a supply to ground, embodiments can be extended to a more general swing of +ve to −ve. In addition, while the concepts described herein have been presented in the context of single-ended circuits, embodiments can also be extended to differential circuits. Also, while the CDAC switching described herein is in the context for a SAR ADC, understand that other ADC architectures, such as a pipeline ADC, may also implement embodiments.
(64) While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.