Charged Particle Gun and Charged Particle Beam System
20230178325 · 2023-06-08
Inventors
Cpc classification
H01J37/07
ELECTRICITY
International classification
Abstract
An electron gun 901 capable of suppressing an uneven temperature distribution at an extraction electrode and a length-measuring SEM 900 are provided. The electron gun 901 is equipped with: a charged particle source 1; an extraction electrode 3 for extracting charged particles from the charged particle source 1 and allowing some of the charged particles to pass while blocking some other charged particles; and an auxiliary structure 5 disposed in contact with the extraction electrode 3. The length-measuring SEM 900 is equipped with the electron gun 901 and a computer system 920 for controlling the electron gun 901.
Claims
1.-16. (canceled)
17. A charged particle gun comprising: a charged particle source; an extraction electrode that extracts charged particles from the charged particle source, allows some of the charged particles to pass therethrough, and blocks some other charged particles; and a continuous heat transfer structure that is separated from the extraction electrode and comes into contact with two or more surfaces including at least a perpendicular surface with respect to a traveling direction of the charged particles extracted from the charged particle source, facing the traveling direction and a surface parallel to the traveling direction, outside the extraction electrode.
18. The charged particle gun according to claim 17, wherein the extraction electrode has a passing portion that allows some of the charged particles to pass therethrough, the heat transfer structure comes into contact with a surface opposite to the charged particle source in the extraction electrode, and the heat transfer structure has an opening portion that includes the entire passing portion when viewed from an optical axis direction.
19. The charged particle gun according to claim 17, further comprising: a conductive member for applying a voltage to the extraction electrode; and an adjustment mechanism that adjusts a positional relationship between the extraction electrode and the conductive member, wherein the adjustment mechanism adjusts a positional relationship between the extraction electrode and the conductive member and fixes the extraction electrode and the conductive member in a state where the extraction electrode and the conductive member are in contact with each other, and a central axis of the extraction electrode, a central axis of the conductive member, and a central axis of the charged particle source match each other.
20. The charged particle gun according to claim 17, wherein the extraction electrode or the heat transfer structure includes a heat radiation fin on outer periphery thereof.
21. The charged particle gun according to claim 17, wherein the heat transfer structure uses gold, silver, copper, or aluminum as a base material.
22. The charged particle gun according to claim 17, wherein in the heat transfer structure, a contact surface with the extraction electrode contains indium, silver, molybdenum, hafnium, aluminum, nickel, tungsten, gold, or copper.
23. The charged particle gun according to claim 17, wherein in the heat transfer structure, at least a part of a surface which is not in contact with the extraction electrode contains a metal having an emissivity of 0.1 or higher.
24. The charged particle gun according to claim 17, wherein the heat transfer structure uses a material having a specific heat of 0.6 J/kgK or less and a specific gravity of 5 g/cm.sup.3 or less as a base material, and the heat transfer structure is covered with a material having a thermal conductivity of 10 W/mK or higher.
25. The charged particle gun according to claim 17, further comprising: a conductive member for applying a voltage to the extraction electrode; and a fixing member that fixes the extraction electrode and the conductive member to each other, wherein the fixing member includes the heat transfer structure, and the heat transfer structure is in contact with the extraction electrode and contains a metal having a thermal conductivity of 10 W/mK or higher.
26. The charged particle gun according to claim 17, further comprising: an adjustment electrode, wherein the adjustment electrode is capable of adjusting an amount of the charged particles emitted from the charged particle source by adjusting an electric field strength around a tip end of the charged particle source.
27. The charged particle gun according to claim 17, wherein the charged particle gun further includes a conductive member for applying a voltage to the extraction electrode, and the heat transfer structure further comes into contact with the conductive member on a surface parallel to the optical axis direction.
28. The charged particle gun according to claim 17, wherein the heat transfer structure is a heat transfer structure body formed by combining a plurality of components.
29. A charged particle gun according to claim 17, wherein the heat transfer structure is subjected to surface treatment.
30. A charged particle beam system comprising: the charged particle gun according to claim 17; and a computer system that controls the charged particle gun.
Description
BRIEF DESCRIPTION OF DRAWINGS
[0019]
[0020]
[0021]
[0022]
[0023]
[0024]
[0025]
[0026]
[0027]
DESCRIPTION OF EMBODIMENTS
[0028] Examples of the present disclosure will be described below with reference to the drawings. In the attached drawing, there is also a case where elements that are functionally the same are displayed with the same number or corresponding number. In addition, in the drawings used in the following examples, hatching may be added even in plan views to make the drawings easier to see. The attached drawings illustrate examples in accordance with the principles of the present disclosure, but these are for the purpose of understanding the present disclosure and are by no means used in a limited interpretation of the present disclosure. The description in the present specification is merely a typical example and does not in any sense limit the scope of the claims or application examples of the present disclosure.
[0029] In the following examples, although the description thereof has been made in sufficient detail for those skilled in the art to implement the present disclosure, it is necessary to understand that other implementations or aspects are possible, and that changes in configuration or structure or substitution of various elements are possible without departing from the scope and spirit of the technical ideas of the present disclosure. Therefore, the following statements should not be interpreted while being limited thereto.
[0030] In addition, in the description of the embodiments below, an example is illustrated in which a charged particle gun (electron gun unit) of the present disclosure is applied to a charged particle beam system (pattern measurement system) composed of a scanning electron microscope (SEM) using an electron beam and a computer system. However, this example should not be construed as limiting, and the present disclosure may be applied to, for example, a wafer defect inspection system, a device using a charged particle beam such as an ion beam, a general observation device, and the like.
EXAMPLE 1
[0031] As an example of the charged particle beam system according to the present disclosure, a length-measuring SEM (also referred to as a critical-dimension scanning electron microscope (CD-SEM)) used for measuring the dimensions of gates or contact holes in semiconductor devices is taken as an example, and the configuration and principle of a length-measuring SEM 900 according to the present disclosure will be described with reference to
[0032]
[0033] Electrons are emitted as charged particles from the electron gun 901 held in a housing 924 maintained in a high vacuum. Emitted electrons are accelerated by a primary electron acceleration electrode 926 to which a high voltage is applied by a high voltage power supply 925. The electron beam 906 (charged particle beam) is converged by an electron lens 927 for convergence. The amount of beam current of the electron beam 906 is then adjusted by an aperture 928. After that, the electron beam 906 is deflected by a scanning coil 929 to two-dimensionally scan a wafer 905 (semiconductor wafer) as a sample.
[0034] An electronic objective lens 930 is disposed directly above the wafer 905. The electron beam 906 is narrowed and focused by the electronic objective lens 930 and enters the wafer 905. Secondary electrons 931 generated as a result of incident primary electrons (electron beam 906) are detected by a secondary electron detector 932. Since the amount of detected secondary electrons reflects the shape of the sample surface, the surface shape can be imaged based on the information on the secondary electrons.
[0035] The wafer 905 is held on an electrostatic chuck 907 while ensuring a constant degree of flatness, and is fixed onto an X-Y stage 904. Note that
[0036] The operation when transferring the wafer 905 to be measured to the electrostatic chuck 907 will be described below. First, the wafer 905 set in a wafer cassette 936 is carried into the load chamber 935 by a transfer robot 938 of a mini-environment 937. The inside of the load chamber 935 can be evacuated and released to the atmosphere by an evacuation system (not shown). The wafer 905 is transferred onto the electrostatic chuck 907 while maintaining the degree of vacuum in the housing 924 at a practically acceptable level by opening and closing a valve (not shown) and operating the transfer robot 934.
[0037] A surface potential meter 939 is attached to the housing 924. The surface potential meter 939 is fixed such that the position in the height direction is adjusted such that the distance from the probe tip end to the electrostatic chuck 907 or the wafer 905 is appropriate, and the surface potential of the electrostatic chuck 907 or the wafer 905 can be measured without contact.
[0038] The length-measuring SEM 900 may include a computer system 920 that controls the electron gun 901. Each component of the length-measuring SEM 900 described above can be realized using a general-purpose computer. Each component may be realized as a function of a program executed on a computer. In the example of
[0039] Furthermore, for example, the computer system 920 may be configured as a multi-processor system. Then, control of each component of the electron optical system in the housing 924 may be realized by the main processor. Also, the control of the X-Y stage 904, the transfer robot 934, the transfer robot 938, and the surface potential meter 939 may be realized by a sub-processor. Further, image processing for generating an SEM image based on the signal detected by the secondary electron detector 932 may be realized by the sub-processor.
[0040] The computer system 920 also has an input device for the user to input instructions, and the like, and a display device for displaying GUI screens and SEM images for inputting these instructions. The input device is a device that allows a user to input data or instructions, such as a mouse, a keyboard, a voice input device, and the like. The display device is, for example, a display unit. Such an input/output device (user interface) may be a touch panel capable of inputting and displaying data.
[0041]
[0042] The auxiliary structure 5 comes into contact with the extraction electrode 3. In the example of
[0043] Also, in this example, the auxiliary structure 5 is disposed outside the extraction electrode 3. “Outside the extraction electrode 3” means, for example, a region or a position on the opposite side of the charged particle source 1 with respect to the extraction electrode 3 (that is, the charged particle source 1 is disposed inside the extraction electrode 3). In this manner, the charged particles do not collide with the auxiliary structure 5, and thus the factors that make the operation of the charged particle gun unstable can be reduced. Moreover, the heat generation of the auxiliary structure 5 can also be suppressed.
[0044] The electron gun 901 includes the charged particle source 1 that emits charged particles (electrons in this example). Although not shown in
[0045] The extraction electrode 3 has a passing portion 3c that allows some of the charged particles to pass therethrough. The passing portion 3c is, for example, a circular opening. A part of the charged particle beam 2 emitted from the charged particle source 1 passes through the passing portion 3c, but the rest collides with the extraction electrode 3. That is, the extraction electrode 3 extracts the charged particles from the charged particle source 1, allows some of the charged particles to pass therethrough, and blocks some other charged particles.
[0046] Since a high voltage is applied to the extraction electrode 3, the collision of the charged particle beam 2 causes current to generate heat. In the conventional configuration, as the heat transfer path of the generated heat, there is only a heat conduction path 4 that propagates heat inside the extraction electrode 3, but in this example, a heat transfer path 6 that propagates heat inside the auxiliary structure 5 from the auxiliary structure 5 which is in contact with the outer surface of the extraction electrode 3 newly exists. Therefore, the conductance of heat transfer is increased, and the local temperature rise of the extraction electrode 3 is suppressed. Thus, the auxiliary structure 5 functions as a heat transfer structure.
[0047] Therefore, the thermal expansion of the extraction electrode 3 is suppressed, and the central axis of the extraction electrode 3 and the central axis of the charged particle source 1 continue to match each other without changing from the initially adjusted state. Accordingly, the charged particle source 1 can stably emit the charged particle beam 2.
[0048] The auxiliary structure 5 has an opening portion 5c through which some of the charged particles pass. The opening portion 5c is, for example, a circular opening. The opening portion 5c includes the entire passing portion 3c of the extraction electrode 3 when viewed from the optical axis direction. Such a configuration is realized when, for example, both the passing portion 3c and the opening portion 5c are formed in a circular shape, the diameter of the opening portion 5c is made larger than the diameter of the passing portion 3c, and the passing portion 3c and the opening portion 5c are arranged concentrically. In this manner, the charged particles do not collide with the auxiliary structure 5, and thus the factors that make the operation of the charged particle gun unstable can be reduced. Moreover, the heat generation of the auxiliary structure 5 can also be suppressed.
[0049]
[0050]
[0051] It can be seen from
[0052] In
[0053]
[0054] A solid line represents the amount of current emitted from the electron source, and a dashed line represents the electric power obtained from expression (1). Electrons were emitted by applying a voltage to the electron source, and the change over time in the amount of current emitted from the electron source was measured.
[0055] In the case shown in
[0056] On the other hand, in the case shown in
[0057] Although
[0058] Therefore, with the electron gun 901 and the length-measuring SEM 900 of this example, uneven temperature distribution in the extraction electrode is suppressed. In particular, in the example of
EXAMPLE 2
[0059] In Example 2, the configuration around the extraction electrode 3 in Example 1 is partially changed. Differences from Example 1 will be described below.
[0060]
[0061] However, the contact area between the screw 21 and the conductive member 20 is small and the thermal conductivity is low. Therefore, by bringing the auxiliary structure 5 into contact with the extraction electrode 3 and the conductive member 20 to increase the contact area, the thermal conductivity is greatly improved, and the temperature rise of the extraction electrode 3 can be suppressed more efficiently. By suppressing the temperature rise of the extraction electrode 3, thermal expansion is suppressed, and stable electron emission from the charged particle source 1 can be obtained.
[0062] Here, the screw 21 is a fixing member that fixes the extraction electrode 3 and the conductive member 20 to each other, but it can also be configured to function as an adjustment mechanism that adjusts the positional relationship between the extraction electrode 3 and the conductive member 20. For example, as shown in
[0063] The auxiliary structure 5 is arranged to cover the extraction electrode 3. Therefore, the relative positions of the charged particle source 1 and the extraction electrode 3 can be adjusted first, and then the auxiliary structure 5 can be attached. Therefore, the attachment of the auxiliary structure 5 does not affect the alignment between the central axis of the charged particle source 1 and the central axis of the extraction electrode 3.
[0064] The orientation of the screw 21 can be changed in any manner, and the extraction electrode 3 can be fixed to the conductive member 20 from any direction. In
EXAMPLE 3
[0065] In Example 3, the configuration of the auxiliary structure 5 in Example 1 is changed such that the auxiliary structure 5 is configured by a plurality of components. Differences from Example 1 will be described below.
[0066]
[0067] In the example of
[0068] Here, in the example shown in
[0069] In
[0070] In the example of
[0071] In addition, in
[0072] Further, there is no restriction on the number of auxiliary components that configure the auxiliary structure. Moreover, it is not necessary to use the same material for each auxiliary component.
EXAMPLE 4
[0073] Example 4 limits the material of the auxiliary structure 5 in Example 1. Differences from Example 1 will be described below.
[0074] In Example 4, the auxiliary structure 5 contains a material having a thermal conductivity of 10 W/mK or higher as shown in
[0075] Example 4 can be similarly applied to the auxiliary structure 5 in Example 2 and the first auxiliary component 33 and the second auxiliary component 34 in Example 3.
EXAMPLE 5
[0076] In Example 5, the auxiliary structure 5 in Example 1 is provided with fins. Differences from Example 1 will be described below.
[0077]
[0078] It is suitable to set the surface area of the heat radiation fins 41a to 420 mm.sup.2 or more. In the example of
[0079] In this example, the auxiliary structure 41 has the heat radiation fins 41a, but instead of or in addition to this, the extraction electrode 3 may have heat radiation fins. Moreover, when the electron gun includes a conductive member (for example, the conductive member 20 in
EXAMPLE 6
[0080] In Example 6, a specific structure is provided on the surface of the auxiliary structure 5 in Example 1. Differences from Example 1 will be described below.
[0081]
[0082] Moreover, as shown in
[0083] Thus, by providing the heat transfer layer 51 with particularly high thermal conductivity on the surface of the auxiliary structure 5 and also providing the heat transfer layer 51 on the surface of the screw 21, the efficiency of heat transfer can be further improved, and the heat generation of the extraction electrode can be conducted with higher efficiency.
[0084] The heat transfer layer 51 can be made of metal, for example. The heat transfer layer 51 desirably contains a material having a thermal conductivity of 10 W/mK or higher. Examples of such materials include metals with high thermal conductivity such as indium, silver, molybdenum, hafnium, aluminum, nickel, tungsten, gold, copper, and the like. The film forming method and thickness of the heat transfer layer 51 shown in Example 6 are not limited. Examples of film forming methods include sputtering, vacuum deposition, and plating.
[0085] In particular, it is suitable that the heat transfer layer 51 is made of a material having a higher thermal conductivity than the other parts (that is, the parts of the auxiliary structure 5 other than the heat transfer layer 51 and the parts of the screw 21 other than the heat transfer layer 51). Copper is suitable as such a material.
[0086] The heat transfer layer 51 of the auxiliary structure 5 is suitably formed over the entire surface that comes into contact with the extraction electrode 3 and the conductive member 20, but may be formed over at least part of such a surface. Similarly, the heat transfer layer 51 of the screw 21 is suitably formed over the entire surface that comes into contact with the extraction electrode 3 and the conductive member 20, but may be formed over at least part of such a surface.
[0087] As a modification example of Example 6, the heat transfer layer 51 of the auxiliary structure 5 may be formed only on the surface that comes into contact with either the extraction electrode 3 or the conductive member 20. Also, either the heat transfer layer 51 of the auxiliary structure 5 or the heat transfer layer 51 of the screw 21 may be omitted.
[0088] The heat transfer layer 51 used in Example 6 can also be used when dividing the auxiliary structure into a plurality of components. In such a case, the heat transfer layer 51 may be provided on the contact surfaces of the auxiliary components. In this manner, the efficiency of heat transfer between the auxiliary components is improved. In such a configuration, the material of the heat transfer layer 51 of each auxiliary component need not be the same.
EXAMPLE 7
[0089] In Example 7, a specific structure is provided on the surface of the auxiliary structure 5 in Example 1. Differences from Example 1 will be described below.
[0090]
[0091] As a specific example, the metal layer 52 may contain a metal having an emissivity of 0.1 or higher. In this manner, in addition to the heat transfer inside the auxiliary structure 5, the heat of the extraction electrode 3 can be dissipated by heat radiation from the metal layer 52, and the temperature rise of the extraction electrode 3 can be further suppressed. As the material of the metal layer 52, a metal having a high emissivity is suitable, such as nickel, stainless steel, chromium, and brass.
[0092] In Example 7, the auxiliary structure 5 may be divided into a plurality of auxiliary components. In that case, the material of the metal layer 52 need not be the same for all auxiliary components.
[0093] Example 7 can also be implemented in combination with Example 6. In that case, the material of the heat transfer layer 51 and the metal layer 52 need not be the same.
[0094] By combining Example 7 and Example 5, the efficiency of heat radiation can be further improved.
[0095] The metal layer 52 is suitably formed over the entire outer surface of the auxiliary structure 5 (particularly, the entire surface not in contact with the extraction electrode 3), but may be formed over at least a part of the outer surface.
EXAMPLE 8
[0096] In Example 8, the material of the main body of the auxiliary structure in Example 6 or 7 is limited. Differences from Examples 6 and 7 will be described below.
[0097] As shown in
[0098] A representative material is titanium. Since titanium has a small heat capacity, the temperature rises quickly, but because of its low thermal conductivity, it is difficult to heat a place far from the heat source. Therefore, by forming the heat transfer layer 51 or the metal layer 52 that conducts heat on the surface of a material having a small heat capacity, such as titanium, heat can be uniformly transferred to the entire auxiliary structure. As a result, the temperature of the entire auxiliary structure rises in a short period of time, and thus the heat transfer performance of the heat transfer structure is improved.
EXAMPLE 9
[0099] In Example 9, the auxiliary structure 5 in Example 1 is subjected to surface treatment. Differences from Example 1 will be described below.
[0100] As shown in
EXAMPLE 10
[0101] In Example 10, a charged particle amount adjustment electrode is additionally provided to the configuration of Example 1. Differences from Example 1 will be described below.
[0102]
[0103] Although not particularly shown in
[0104] According to Example 10, the intensity of the charged particle beam can be adjusted more appropriately.
[0105] In the above description of Examples 1 to 10, specific combinations of Examples have been described, but each Example can be implemented in any combination.
REFERENCE SIGNS LIST
[0106] 1: charged particle source
[0107] 2: charged particle beam
[0108] 3: extraction electrode
[0109] 3a: first part
[0110] 3b: second part
[0111] 3c: passing portion
[0112] 4: heat conduction path
[0113] 5: auxiliary structure (heat transfer structure)
[0114] 5c: opening portion
[0115] 6: heat transfer path
[0116] 8: temperature measurement portion
[0117] 9: charged particle irradiation portion
[0118] 20: conductive member
[0119] 21: screw (heat transfer structure)
[0120] 22: heat transfer path
[0121] 31: plate-like extraction electrode (extraction electrode)
[0122] 32: conductive member
[0123] 33: first auxiliary component (heat transfer structure)
[0124] 34: second auxiliary component (heat transfer structure)
[0125] 35: heat conducting terminal (heat transfer structure)
[0126] 51: heat transfer layer
[0127] 52: metal layer
[0128] 41: auxiliary structure (heat transfer structure)
[0129] 41a: heat radiation fin
[0130] 61: charged particle amount adjustment electrode (adjustment electrode)
[0131] 900: length-measuring SEM (charged particle beam system)
[0132] 901: electron gun (charged particle gun)
[0133] 920: computer system
[0134] A, A1, A3, A20: central axis