POWER CONVERSION DEVICE
20170338735 · 2017-11-23
Inventors
- EDUARDO-JOSE ALARCON-COT (EINDHOVEN, NL)
- JULIA DELOS AYLLON (EINDHOVEN, NL)
- TONI LOPES (EINDHOVEN, NL)
- Reinhold ELFERICH (EINDHOVEN, NL)
- HARALD JOSEF GUNTHER RADERMACHER (EINDHOVEN, NL)
- MACHIEL ANTONIUS MARTINUS HENDRIX (EINDHOVEN, NL)
Cpc classification
H02M3/07
ELECTRICITY
H02M3/158
ELECTRICITY
H02M1/0095
ELECTRICITY
H02M7/483
ELECTRICITY
Y02B20/30
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02B70/10
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
International classification
H02M1/42
ELECTRICITY
H02M1/088
ELECTRICITY
H02M3/07
ELECTRICITY
Abstract
A system for supplying a load comprising: an input inductor configured to receive an input voltage, a selection module connected to the inductor via a switching node, and a multi-level half-bridge stage comprising a plurality of half-bridge stages, each half-bridge stage comprising a pair of switches connected between a switching node; a power combining stage coupled to each half-bridge stage using parallel bus voltage lines output from the multi-level half-bridge stage, the power combining stage configured to output a voltage to the load; and a controller configured, based on the input voltage, to selectively control a half-bridge stage to operate in a half-bridge mode to provide a stepped-up voltage on a bus voltage line, wherein the controller is further configured to control the power combining stage to provide a voltage between the bus voltage lines and the sum of these voltages is higher than a peak of the input voltage.
Claims
1. A power conversion system for supplying a load, the power conversion system comprising: a power factor corrective front end comprising: an input inductor configured to receive a rectified mains input voltage, a selection module connected to the input inductor via a switching node (V.sub.x), and a multi-level half-bridge stage comprising a plurality of half-bridge stages connected in series, each half-bridge stage comprising a pair of switches connected at a floating switching node (V.sub.x1, V.sub.x2, V.sub.x3, V.sub.x4, V.sub.x5), whereby each half-bridge floating switching node is connected to one of a plurality of outputs of the selection module; a power combining stage coupled to each half-bridge stage of the power factor corrective front end by way of one of a plurality of parallel bus voltage lines (V.sub.L1, V.sub.L2, V.sub.L3, V.sub.L4, V.sub.L5) output from said multi-level half-bridge stage, the power combining stage configured to combine power on the plurality of parallel bus voltage lines to output a DC voltage to said load; and a controller configured, in dependence on the rectified mains input voltage, to selectively control one of said half-bridge stages to operate in a half-bridge mode, and control the selection module to connect the switching node with the floating switching node of the selected half-bridge stage to provide a stepped-up voltage on one of the plurality of parallel bus voltage lines, wherein the controller is further configured to control the power combining stage to provide a voltage (V.sub.BUS) between each of the plurality of parallel bus voltage lines, wherein the sum (5*V.sub.BUS) of the voltages across each of the plurality of parallel bus voltage lines is higher than a peak of the rectified mains input voltage.
2. The power conversion system of claim 1, wherein the selection module comprises a plurality of switches and a plurality of voltage clamping components, each voltage clamping component configured to operate as a voltage clamp to limit a maximum blocking voltage of one of the switches to said voltage.
3. The power conversion system of claim 1, wherein the controller comprises an inductor current sensing circuit configured to sense current in the input inductor; and is configured to generate pulse width modulated signals for driving an upper switch of the half-bridge stage and lower switch of the half-bridge stage operating in the half-bridge mode, based on the sensed current in the input inductor.
4. The power conversion system of claim 3, wherein the controller comprises a current controller stage comprising a first comparator configured to compare the sensed current in the input inductor to an upper threshold and a second comparator configured to compare the sensed current in the input inductor to a lower threshold, wherein outputs of the first comparator and the second comparator are used to generate the pulse width modulated signals for driving an upper switch of the half-bridge stage and lower switch of the half-bridge stage operating in the half-bridge mode.
5. The power conversion system of claim 4, wherein the current controller stage comprises an S-R latch, wherein the output of the first comparator is supplied to a first input of the S-R latch and the output of the second comparator is supplied to a second input of the S-R latch, and a first output of the S-R latch outputs a pulse width modulated signal for driving the upper switch of the half-bridge stage and a second output of the S-R latch outputs a pulse width modulated signal for driving the lower switch of the half-bridge stage.
6. The power conversion system of claim 4, or wherein the controller further comprises: a comparator stage configured to compare said voltage to a voltage set point to output an error signal; and a power factor controller stage configured to receive the error signal as an input, and adjust the upper threshold based on the error signal.
7. The power conversion system of claim 6, wherein the error signal indicates said voltage is less than the voltage set point, the power factor controller stage is configured increase the upper threshold; and wherein the error signal indicates said voltage is greater than the voltage set point, the power factor controller stage is configured decrease the upper threshold.
8. The power conversion system of claim 3, wherein the controller controls the half-bridge stage to operate in the half-bridge mode in accordance with a critical conduction mode.
9. The power conversion system of claim 8, wherein the lower threshold is set to zero.
10. The power conversion system of claim 1, wherein the power combining stage comprises a Switched Capacitor Converter, comprising a plurality of switches controlled by the controller.
11. The power conversion system of claim 10, wherein the Switched Capacitor Converter is based on a Dickson ladder topology comprising a first set of switches and a second set of switches, wherein the controller is configured to drive the first set of switches and the seconds set of switches in a complementary manner.
12. The power conversion system of claim 10, wherein the Switched Capacitor Converter comprises a grounded capacitor ladder comprising a plurality of capacitors, and a flying capacitor ladder comprising at least one capacitor.
13. The power conversion system of claim 12, wherein the controller is configured to drive the first set of switches and the seconds set of switches to control the capacitors in the flying capacitor ladder to switch between terminals of the grounded capacitor ladder to provide said voltage between each of the plurality of parallel bus voltage lines.
14. The power conversion system of claim 9, wherein the Switched Capacitor Converter has a fixed step-down conversion ratio.
15. The power conversion system of claim 1, wherein said load is a light module comprising at least one light source.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0025] For a better understanding of the present disclosure and to show how embodiments may be put into effect, reference is made to the accompanying drawings in which:
[0026]
[0027]
[0028]
[0029]
[0030]
[0031]
[0032]
[0033]
[0034]
[0035]
[0036]
[0037]
[0038]
[0039]
DETAILED DESCRIPTION
[0040] Reference is first made to
[0041] As will be appreciated by persons skilled in the art, the mains supply voltage supplied by the mains supply voltage source 102 is an AC voltage having a value in dependence of the geographical location of the mains supply voltage source 102. For example, the mains supply voltage may be in the range of 90-130 Vrms, corresponding to the grid voltage in the USA, or in the range of 200-260 Vrms, corresponding to the grid voltage in European countries.
[0042] The rectifier 104 is arranged to convert the AC mains supply voltage supplied by the mains supply voltage source 102 to a DC voltage (i.e. a rectified mains voltage). The rectifier 104 may for example comprise a diode bridge. Persons skilled in the art are familiar with how such a rectifier performs AC voltage rectification, therefore further detail on the rectifier 104 is not included herein.
[0043] The rectifier 104 is arranged to supply the rectified mains voltage to the segmented PFC boost converter stage 105.
[0044] PFC converters are utilized to improve the power factor of AC power. An important consideration in the design of power converters is that a power converter should provide a high power factor. The power factor of power converters generally refers to the ratio of the true power to the product of the voltage and current in the circuit. A high power factor is one which approximates or exceeds 0.9, with the maximum power factor being 1.0. For example, in an electric powered device, a load with a low power factor has a higher current flow than a load with a high power factor for the same amount of useful power transferred.
[0045] The segmented PFC boost converter stage 105 comprises an input inductor (L.sub.in) 106, a demultiplexer 108 and a multi-level half-bridge stage 110. The segmented PFC boost converter stage 105 is configured to change the waveform of current drawn by the load to improve the power factor.
[0046] The multi-level half-bridge stage 110 of the segmented PFC boost converter stage 105 is coupled to the power combining stage 112.
[0047] In embodiments described below, the power combining stage 112 comprises a switched capacitor converter (SCC) that is configured to operate as n:1 voltage divider (where n>=2).
[0048] The controller 118 allows a control loop by controlling the demultiplexer 108, the multi-level half-bridge stage 110, and the SCC stage 112 as a function of input signals representative of a sensed rectified mains voltage supplied by the rectifier 104, the rectified mains voltage output by the input inductor 106, and/or a signal representative of a sensed load voltage, sensed bus voltage V.sub.BUS, load current or load power.
[0049] Reference is now made to
[0050] The SCC stage 112 uses a Dickson Ladder topology based on nine capacitors C.sub.BUS-C9 and ten switches M11-M20 of the single pole, single throw type. More specifically, the SCC stage 112 comprises two capacitor ladders, a grounded capacitor ladder and a flying capacitor ladder. The number of capacitors in the grounded capacitor ladder scales with the number of stages used, for an n:1 voltage divider (where n≧2), there is n capacitors in the grounded capacitor ladder. The number of capacitors in the flying capacitor ladder also scales with the number of stages used, for an n:1 voltage divider (where n≧2), there is n−1 capacitors in the flying capacitor ladder.
[0051] As shown in
[0052] The SCC stage 112 further comprises eleven central nodes 201-211. A first switch M11 selectively connects a first central node 201 to the second central node 202. A second switch M12 selectively connects the second central node 202 to the third central node 203. A third switch M13 selectively connects the third central node 203 to the fourth central node 204. A fourth switch M14 selectively connects the fourth central node 204 to the fifth central node 205. A fifth switch M15 selectively connects the fifth central node 205 to the sixth central node 206. A sixth switch M16 selectively connects the sixth central node 206 to the seventh central node 207. A seventh switch M17 selectively connects the seventh central node 207 to the eighth central node 208. An eighth switch M18 selectively connects the eighth central node 208 to the ninth central node 209. A ninth switch M19 selectively connects the ninth central node 209 to the tenth central node 210. A tenth switch M20 selectively connects the tenth central node 210 to the eleventh central node 211. The eleventh central node 211 is connected to ground (e.g. 0 v).
[0053] The flying capacitor ladder is located between the second central node 202 and the tenth central node 210. In particular the sixth capacitor C.sub.6 is located between the second central node 202 and the fourth central node 204. The seventh capacitor C.sub.7 is located between the fourth central node 204 and the sixth central node 206. The eighth capacitor C.sub.8 is located between the sixth central node 206 and the eighth central node 208. The ninth capacitor C.sub.9 is located between the eighth central node 208 and the tenth central node 210.
[0054] The grounded capacitor ladder is located between the first central node 201 and the eleventh central node 211. In particular the first capacitor C.sub.1 is located between the first central node 201 and the third central node 203. The second capacitor C.sub.2 is located between the third central node 203 and the fifth central node 205. The third capacitor C.sub.3 is located between the fifth central node 205 and the seventh central node 207. The fourth capacitor C.sub.4 is located between the seventh central node 207 and the ninth central node 209. The mains storage capacitor C.sub.BUS is located between the ninth central node 209 and the eleventh central node 211.
[0055] The controller 118 (shown in
[0056] The multi-level half-bridge stage 110 comprises n half-bridge stages. As shown in
[0057] A first half-bridge stage comprising an upper switch M1 and a lower switch M2, is connected in parallel with capacitor C.sub.1. The drain connection of switch M1 is connected to the first central node 201 of the SCC stage 112. The source connection of switch M1 is connected to the drain connection of switch M2. The source connection of switch M2 is connected to the third central node 203 of the SCC stage 112. A fifth switching node V.sub.x5 is located between the source connection of switch M1 and the drain connection of switch M2.
[0058] A second half-bridge stage comprising an upper switch M3 and a lower switch M4, is connected in parallel with capacitor C.sub.2. The drain connection of switch M3 is connected to the third central node 203 of the SCC stage 112. The source connection of switch M3 is connected to the drain connection of switch M4. The source connection of switch M4 is connected to the fifth central node 205 of the SCC stage 112. A fourth switching node V.sub.x4 is located between the source connection of switch M3 and the drain connection of switch M4.
[0059] A third half-bridge stage comprising an upper switch M5 and a lower switch M6, is connected in parallel with capacitor C.sub.3. The drain connection of switch M5 is connected to the fifth central node 205 of the SCC stage 112. The source connection of switch M5 is connected to the drain connection of switch M6. The source connection of switch M6 is connected to the seventh central node 207 of the SCC stage 112. A third switching node V.sub.x3 is located between the source connection of switch M5 and the drain connection of switch M6.
[0060] A fourth half-bridge stage comprising an upper switch M7 and a lower switch M8, is connected in parallel with capacitor C.sub.4. The drain connection of switch M7 is connected to the seventh central node 207 of the SCC stage 112. The source connection of switch M7 is connected to the drain connection of switch M8. The source connection of switch M8 is connected to the ninth central node 209 of the SCC stage 112. A second switching node V.sub.x2 is located between the source connection of switch M7 and the drain connection of switch M8.
[0061] A fifth half-bridge stage comprising an upper switch M9 and a lower switch M10, is connected in parallel with mains storage capacitor C.sub.BUS. The drain connection of switch M9 is connected to the ninth central node 209 of the SCC stage 112. The source connection of switch M9 is connected to the drain connection of switch M10. The source connection of switch M10 is connected to the eleventh central node 211 of the SCC stage 112. A second switching node V.sub.x1 is located between the source connection of switch M9 and the drain connection of switch M10.
[0062] At any one time, the controller 118 controls the switches of only one of the half-bridge stages to operate in half-bridge mode, as described in further detail below. When a half-bridge stage operates in half-bridge mode, the lower switch and upper switch of the half-bridge stage are turned on and off complementary to each other.
[0063] As shown in
[0064] As shown in
[0065] A positive terminal (anode) of a first diode D1 is connected to the switching node V.sub.x, and the negative terminal (cathode) of the first diode D1 is connected to the switching node V.sub.x5. A drain connection of switch M21 is connected to the switching node V.sub.x. A positive terminal (anode) of a second diode D2 is connected to the source connection of switch M21 and the negative terminal (cathode) of the second diode D2 is connected to the switching node V.sub.x4. A drain connection of switch M22 is connected to the source connection of switch M21. A positive terminal (anode) of a third diode D3 is connected to the source connection of switch M22 and the negative terminal (cathode) of the third diode D3 is connected to the switching node V.sub.x3. A drain connection of switch M23 is connected to the source connection of switch M22. A positive terminal (anode) of a fourth diode D4 is connected to the source connection of switch M23 and the negative terminal (cathode) of the fourth diode D4 is connected to the switching node V.sub.x2. A drain connection of switch M24 is connected to the source connection of switch M23. A source connection of switch M24 is connected to the switching node V.sub.x1.
[0066] As described above, in a state-of-the-art boost PFC converter, the intermediate bus voltage is typically fixed above 400V therefore high voltage (HV) switches in the SCC stage 112 must be used.
[0067] In accordance with embodiments of the present invention, using the segmented PFC boost converter stage 105, the intermediate bus voltage e.g. 400V value keeps the same; however the voltage stress seen by all the devices, switches and capacitors in the SCC stage 112, is determined by the number of levels used. In the illustrative embodiment shown in
[0068] The capacitors in the flying ladder switch between the terminals of the grounded ladder capacitors, e.g. during phase A C.sub.6 is in parallel with C.sub.1, and during phase B C.sub.6 is in parallel with C.sub.2. In this way the voltage in the capacitors is equalized and the charge is transported from the input terminal to the output, therefore the voltage between the terminals of all the capacitors is the same and equal to V.sub.BUS.
[0069] The demultiplexer 108 is designed to use diodes D.sub.1 to D.sub.4 and the grounded leg capacitors as voltage clamps for the multiplexer switches M21-M24 limiting their maximum blocking voltage to V.sub.BUS (described in more detail below with reference to
[0070] Depending on the input voltage the demultiplexer 108 connects the switching node V.sub.x to the corresponding switching node provided by the half-bridges, as described in more detail below with reference to
[0071]
[0072] When the rectified mains voltage output from the rectifier 104, referred to as V.sub.in herein after, is in the range, 0≦V.sub.in<V.sub.BUS all of the switches M21-M24 are turned on (as shown in
[0073] During phase A, flying capacitor C.sub.9 is in parallel with the grounded capacitor C.sub.4, and during phase B flying capacitor C.sub.9 is in parallel with the mains storage capacitor C.sub.BUS. This switching results in the voltage V.sub.BUS being across the grounded capacitor C.sub.4. Thus a voltage of 2*V.sub.BUS will be present on a segmented bus voltage output line V.sub.L2. The segmented bus voltage output line V.sub.L2 is connected between the drain connection of switch M7 and the seventh central node 207. It will be appreciated that this switching of capacitors in the flying ladder being connected between the terminals of grounded ladder capacitors occurs for all of the capacitors in the flying ladder.
[0074] Thus the voltage V.sub.BUS will be across the grounded capacitor C.sub.3, resulting in a voltage of 3*V.sub.BUS being present on a segmented bus voltage output line V.sub.L3 (the segmented bus voltage output line V.sub.L3 is connected between the drain connection of switch M5 and the fifth central node 205). Similarly, the voltage V.sub.BUS will be across the grounded capacitor C.sub.2, resulting in a voltage of 4*V.sub.BUS being present on a segmented bus voltage output line V.sub.L4 (the segmented bus voltage output line V.sub.L4 is connected between the drain connection of switch M3 and the third central node 203). Furthermore, the voltage V.sub.BUS will be across the grounded capacitor C.sub.1, resulting in a voltage of 5*V.sub.BUS being present on a segmented bus voltage output line V.sub.L5 (the segmented bus voltage output line V.sub.L5 is connected between the drain connection of switch M1 and the first central node 201).
[0075] When V.sub.in is in the range, V.sub.BUS≦V.sub.in<2*V.sub.BUS—the switches M21-M23 are turned on such that no current flows in any of the diodes D1-D3, and the switch M24 is turned off (as shown in
[0076] As shown in
[0077] When V.sub.in is in the range, 2*V.sub.BUS≦V.sub.in<3*V.sub.BUS—the switches M21 and M22 are turned on such that no current flows in the first diode D1 or the second D2, and switches M23 and M24 are turned off (as shown in
[0078] Diode D3 will start conducting if the voltage in V.sub.x rises above 3*V.sub.BUS (around 240V), clamping the node to 3V.sub.BUS. Since the source of switch M23 is connected to 2*V.sub.BUS (around 160V) through switch M7 and diode D4, thus as shown in
[0079] When V.sub.in is in the range, 240≦V.sub.in<320—the switch M21 is turned on such that no current flows in the first diode D1, and switches M22-M24 are turned off (as shown in
[0080] The source of switch M22 is connected to 3*V.sub.BUS and if Vx rises above 4*V.sub.BUS (around 320V) the diode D2 and the body diode of switch M3 will clamp the voltage at Vx to 4V.sub.BUS. Since the source of switch M22 is connected to 3*V.sub.BUS through switch M5 and diode D3 the voltage across the switch M22 will be V.sub.BUS.
[0081] When Vin is in the range, 4*V.sub.BUS≦V.sub.in<5*V.sub.BUS the switches are as follows M21-M24 are turned off (as shown in
[0082] In this scenario M1 and M2 of the multi-level half-bridge stage 110 are the switches that compose the half-bridge. These two switches enable the generation of a PWM voltage at the switching node V. The PWM voltage at the switching node V.sub.x is at 4*V.sub.BUS when the lower half-bridge switch M2 is turned on (and the upper half-bridge switch M1 is turned off) and is at 5*V.sub.BUS when M1 is turned on (M2 turned off). This PWM action enables to boost the input voltage from 4*V.sub.BUS≦V.sub.in<5*V.sub.BUS to 5*V.sub.BUS which is output on the segmented bus voltage output line V.sub.L5, in accordance with conventional boost converter operation. Due to the switching of the capacitors in the flying ladder being connected between the terminals of the grounded ladder capacitors, as described above, the voltage between the terminals of all the grounded ladders capacitors is the same and equal to V.sub.BUS.
[0083] The source of switch M21 is connected to 4*V.sub.BUS and if V.sub.x rises above 5*V.sub.BUS (400V that is not probable since the input is connected to mains and the maximum peak voltage will be 330V) the diode D1 and the body diode of switch M1 will clamp the voltage at V.sub.x to 5*V.sub.BUS. Since the source of switch M21 is connected to 4*V.sub.BUS through switch M3 and diode D2 the voltage across the switch M21 will be V.sub.BUS.
[0084] In each of the scenarios described above, the voltage V.sub.BUS is present on the segmented bus voltage output line V.sub.L1, the voltage 2*V.sub.BUS is present on the segmented bus voltage output line V.sub.L2, the voltage 3*V.sub.BUS is present on the segmented bus voltage output line V.sub.L3, the voltage 4*V.sub.BUS is present on the segmented bus voltage output line V.sub.L4, and the voltage 5*V.sub.BUS is present on the segmented bus voltage output line V.sub.L5. Thus it can be seen that the intermediate bus voltage (5*V.sub.BUS) is balanced equally in the grounded capacitor ladder of the SCC stage 112. Depending on the input voltage the multiplexer connects the switching node V.sub.x to the corresponding switching node switching node V.sub.x1−V.sub.x5 provided by the half-bridges of the multi-level half-bridge stage 110, this is indicated in Table 1 below.
[0085] Table 1 further illustrates the switches that are operated in half-bridge mode whereby the lower switch of the half-bridge is denoted L-HB and the upper switch of the half-bridge is denoted U-HB.
TABLE-US-00001 TABLE 1 Input voltage [V] V.sub.X M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 0 ≦ V.sub.in < V.sub.BUS V.sub.X1 OFF ON OFF ON OFF ON OFF ON U-HB L-HB V.sub.BUS ≦ V.sub.in < 2 V.sub.BUS V.sub.X2 OFF ON OFF ON OFF ON U-HB L-HB ON OFF 2 V.sub.BUS ≦ V.sub.in < 3 V.sub.BUS V.sub.X3 OFF ON OFF ON U-HB L-HB ON OFF ON OFF 3 V.sub.BUS ≦ V.sub.in < 4 V.sub.BUS V.sub.X4 OFF ON U-HB L-HB ON OFF ON OFF ON OFF 4 V.sub.BUS ≦ V.sub.in < 5 V.sub.BUS V.sub.X5 U-HB L-HB ON OFF ON OFF ON OFF ON OFF
[0086] In each of the above scenarios outlined above (whereby the input voltage is in one of a plurality of voltage ranges), the voltage drop V.sub.L, in the input inductor 106 (which can be expressed V.sub.in−V.sub.x) is positive when the lower half-bridge switch is on and negative when the higher half-bridge switch is on. It can be seen that the voltage across the input inductor 106 has a positive minimum voltage when higher half-bridge switch is on (V.sub.L=−V.sub.BUS), and a positive maximum voltage when the lower half-bridge switch is on (V.sub.L=V.sub.BUS). This is shown in
[0087]
[0088]
[0089] As shown in
[0090]
[0091] The controller 118 comprises a hysteretic controller stage 600 in order to realize the CCM. As shown in
[0092] An inductor current sensing circuit is used to sense the the current il in the input inductor 106 and provide an output that is indicative of the current il to the hysteretic controller stage 600. Current sensing circuits are well known to persons skilled in the art, and embodiments of the present disclosure are not limited to a particular current sensing circuit. An example inductor current sensing circuit 1200 is shown in
[0093] The output of the comparators 602a and 602b are supplied to an S-R latch 604. In particular, the output of the comparator 602a is supplied to the S input of the S-R latch 604 and the output of the comparator 602b is supplied to the R input of the S-R latch 604.
[0094] The Q output of the S-R latch 604 is provided as a gate signal (gate_UHB) to the upper switch of the active half-bridge stage of the multi-level half-bridge stage 110. The NOT Q output of the S-R latch 604 is provided as a gate signal (gate_LHB) to the lower switch of the active half-bridge stage of the multi-level half-bridge stage 110. For a CrCM operation the lower current threshold low_th is typically set to zero. The hysteretic controller stage 600 can be enhanced including a dead-time generator between the upper and lower gate signals that with proper timing can enable soft-switching operation. The comparators 602a and 602b can include a hysteresis to prevent instabilities.
[0095] The hysteretic controller stage 600 may be coupled to each of the half-bridge stages of the multi-level half-bridge stage 110 via a selection means (e.g. a demultiplexer). The selection means receives as inputs the gate signal (gate_LHB) and the gate signal (gate_UHB) and has outputs connected to the gate terminals of each of the switches M1-M10 (the half-bridge stages of the multi-level half-bridge stage 110). In dependence on the input rectified mains voltage this selection means is configured to determine which of the half-bridge stages is to be active and supply the gate signal (gate_LHB) to the lower switch of the active half-bridge stage and supply the gate signal (gate_UHB) to the upper switch of the active half-bridge stage.
[0096] The low frequency (LF) waveform shape of the input current during half period of the mains cycle can be controlled by the value set in the upper current threshold up_th. Depending on the input current shaping the SCC stage 112 can be optimized for power quality or mains storage (minimizing the size of the mains storage capacitor C.sub.BUS).
[0097]
[0098]
[0099]
[0100] It can be seen in that in these two cases the input current is not drawn during the entire mains cycle, which on the one hand reduces the necessary number of components in the segmented PFC boost converter stage 105, however on the other hand increases the size of the mains storage capacitor C.sub.BUS. The voltage V.sub.BUS is always the same, but in the embodiments of
[0101] Besides the evident reduction of the voltage stress in the switches in the SCC stage 112, the proposed invention also achieves a reduction of the switching frequency of the SCC stage 112 compared to the classical boost PFC approach.
[0102]
[0103]
[0104] From
[0105] A close loop control scheme as shown in
[0106] The PFC controller 1004 is configured to output a signal indicative of the upper current threshold, up_th, to the hysteretic controller stage 600, based on the error signal received from the comparator 1002. In order to provide the bus voltage set point on the segmented bus voltage output line V.sub.L1, the PFC controller 1004 adjusts the amount of input current by varying the upper current threshold, up_th, to minimise the error signal. When the sensed bus voltage (V.sub.BUS) is less than the bus voltage set point, the PFC controller 1004 increases the upper current threshold, up_th, to increase the input current. When the sensed bus voltage (V.sub.BUS) is greater than the bus voltage set point, the PFC controller 1004 decreases the upper current threshold, up_th, to decrease the input current.
[0107] The hysteretic controller stage 600 also receives as an input a signal indicative of the sensed inductor current il through the inductor L.sub.in of the segmented PFC boost converter stage 105. As described above with reference to
[0108] Referring back to
[0109] It will be appreciated that an output filter may be connected between the output of the SCC stage 112 and the load 114. The output filter may be formed using one or any combination of: at least one resistor, at least one inductor and at least one capacitor.
[0110] In accordance with embodiments of the present invention the intermediate bus voltage between the segmented PFC boost converter stage 105 and the SCC stage 112 is divided in levels within the SCC stage 112 which enables (i) power train implementation with low voltage (LV) switches, suitable in the state-of-the-art Very-large-scale integration (VLSI) processes, (ii) reduced magnetics due to higher frequency operation (as shown in
[0111] Embodiments of the present disclosure are not limited to the power combining stage 112 comprising a switched capacitor converter (SCC). That is, the power combining stage 112 may comprise any circuitry that includes a plurality of parallel input nodes and is operable to (i) combine the power supplied to the plurality of input nodes to supply a DC output voltage to the load 114, and (ii) is operable to provide a voltage between each of the plurality of input nodes, wherein the sum of the voltages across each of the plurality of input nodes is higher than the peak of the rectified mains voltage supplied from the rectifier 104.
[0112] All the switches of the SCC stage 112 can be bi-directional and implemented in a suitable technology that is compatible with the switching frequency of the circuit. For instance the switches can be formed by Metal Oxide Semiconductor Field Effect Transistors (MOSFET) on a silicon substrate or High Electron Mobility Transistors (HEMT) on a Gallium-Nitride substrate.
[0113] The capacitors can also be implemented using a technology similar to that applied to Ferroelectric Random Access Memory (FRAM) or embedded Dynamic Random Access Memory (eDRAM). The higher dielectric constant achieved with such technologies makes the integrated SCCs smaller and thus cheaper.
[0114] While the invention has been illustrated and described in detail in the drawings and foregoing description, it should be clear to a person skilled in the art that such illustration and description are to be considered illustrative or exemplary and not restrictive. The invention is not limited to the disclosed embodiments; rather, several variations and modifications are possible within the protective scope of the invention as defined in the appending claims.
[0115] It is to be noticed that though mostly applications wherein the load is a light source are described herein, the current invention can also apply to many systems wherein there is a need for integrated power management units, for example in integrated devices such as implantable or wearable body sensors for sensing physical or physiological parameters, or in integrated energy harvesting units, etc.