ACTIVE BOOTSTRAPPING DRIVERS

Abstract

A circuit to enhance the driving capability of conventional inverting bootstrapping GaN drivers. When the inverting driver input is logic high and the driver output is off, the voltage stored on the first bootstrap capacitor for turning on the high side (pull-up) FET of the inverting driver is charged to the full supply voltage using an active charging FET, instead of using a diode or diode-connected FET in a conventional bootstrapping driver. The gate voltage of the active charging FET is bootstrapped to a voltage higher than supply voltage by a second bootstrap capacitor that connects to the inverting driver input, which is at a logic high. The second bootstrap capacitor is charged by an additional diode or diode-connected FET connected to the supply voltage when the inverting driver input is a logic low.

Claims

1. A bootstrapping gate driver for a high side FET having a drain terminal connected to a supply voltage, a source terminal connected to an output, and a gate terminal, the bootstrapping gate driver comprising: an input for receiving a control signal; and a bootstrap capacitor electrically connected between the voltage source and ground when the control signal corresponds to a charging phase, thereby charging the capacitor, the capacitor being electrically connected to the gate terminal of the high side FET when the control signal corresponds to a driving stage; an active charging circuit comprising a charging FET, a diode or a diode-connected FET, and a second bootstrap capacitor for charging the first bootstrap capacitor up to the supply voltage without a diode voltage drop when the control signal corresponds to the driving stage.

2. The bootstrapping gate driver of claim 1, further comprising a resistor electrically connected between the voltage source and the gate of the high side FET to decrease static current consumption.

3. The bootstrapping gate driver of claim 1, further comprising a low side FET for turning off the high side FET, the low side FET having a drain terminal connected to the source of the high side FET and the output, a gate terminal connected to the input, and a source terminal connected to ground.

4. The bootstrapping gate driver of claim 1, wherein the active charging circuit further comprises a second charging FET and a second bootstrap capacitor to mitigate slow charging of the bootstrap capacitor due to the threshold voltage of the active charging FET.

5. The bootstrapping gate driver of claim 4, further comprising a second input and a second active charging circuit including a third active charging FET, a second diode or diode-connected FET, and a third bootstrap capacitor, the third bootstrap capacitor being connected to and controlled by a third active charging FET and a second diode or diode-connected FET, the third active charging FET being controlled in turn by the voltage on the second bootstrap capacitor.

6. The bootstrapping gate driver of claim 1, wherein the active charging circuit is cascaded such that the bootstrapping gate driver comprises at least one additional stage of the active charging circuitry.

7. The bootstrapping gate driver of claim 4, wherein the active charging circuit is cascaded, such that the bootstrapping gate driver comprises at least one additional stage of the active charging circuitry, and the charging FET for charging the first bootstrap capacitor in each driver stage is controlled by the first bootstrap capacitor in the preceding driver stage.

8. The bootstrapping gate driver of claim 5, wherein the additional stage of the active charging circuitry comprises a FET that is smaller than the high side FET, and the secondary stage comprises a FET that is smaller than the FET of active charging circuit, and wherein the bootstrap capacitor is smaller than the bootstrap capacitor of the additional stage of the active charging circuitry.

9. The bootstrapping gate driver of claim 1, wherein the FETs of the bootstrapping gate driver are gallium nitride (GaN) FETs.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above-noted features, objects, and advantages of the present disclosure will become more apparent from the detailed description set forth below when taken in conjunction with the drawings in which like reference characters identify correspondingly throughout and wherein:

[0027] FIG. 1 is a schematic of a conventional bootstrapping gate driver circuit.

[0028] FIG. 2 is a schematic of a conventional bootstrapping supply for a half-bridge circuit.

[0029] FIG. 3 is a schematic of the active bootstrapping gate driver circuit of the present invention.

[0030] FIG. 4A is a schematic of a conventional cascaded bootstrapping gate driver circuit, and FIG. 4B is a schematic of a cascaded active bootstrapping gate driver circuit with an active charging circuit in accordance with the present invention.

[0031] FIG. 5 is a schematic of a second embodiment of the active bootstrapping gate driver circuit of the present invention, with a second active charging FET.

[0032] FIG. 6 is a schematic of a third embodiment of the active bootstrapping gate driver circuit of the present invention, with a third active charging FET and a third bootstrap capacitor.

[0033] FIG. 7 is a schematic of cascading two active bootstrapping gate driver circuits, with the active charging FET in the second gate driver circuit controlled by the first bootstrap capacitor of the first active bootstrapping gate driver circuit.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] In the following detailed description, reference is made to certain embodiments. These embodiments are described with sufficient detail to enable those skilled in the art to practice them. It is to be understood that other embodiments may be employed and that various structural, logical, and electrical changes may be made. The combinations of features disclosed in the following detailed description may not be necessary to practice the teachings in the broadest sense, and are instead taught merely to describe particularly representative examples of the present teachings.

[0035] Referring first to FIG. 3, a schematic of the active bootstrapping gate driver circuit 300 of the present invention is shown. Circuit 300 uses the uses the active bootstrap charging circuitry of FIG. 2 to charge the bootstrap capacitor in the circuit of FIG. 1. Specifically, in accordance with the present invention, diode connected FET 135 in FIG. 1 is replaced with an active charging circuit, namely active charging FET 335, a diode-connected FET 325 and a second bootstrap capacitor 315 for charging the first bootstrap capacitor 350.

[0036] For a logic high input (the charging mode), FET 355 and low side FET 395 are on, with node 360 and the output at ground. The voltage at node 375 is approximately equal to the voltage at the input (V.sub.dd) plus the voltage stored on capacitor 315 during the driving mode when the input is a logic low, i.e., is approximately equal to V.sub.dd + (V.sub.dd - V.sub.GS_325). Hence, FET 335 is turned on and charges capacitor 350 to approximately V.sub.dd. Thus, the voltage stored on bootstrap capacitor 350 is maximized during the charging mode with the input is a logic high.

[0037] For a logic low input (driving mode), FET 355 and low side FET 395 are off. Since the input is at ground, capacitor 315 is recharged to V.sub.dd - V.sub.GS.sub._325. The voltage on capacitor 350 is applied to the gate-to-source voltage (V.sub.GS) of the high side FET 385 via resistor 345, with the voltage at node 370 equal to the voltage at node 360, turning on high side FET 385. The output will increase to V.sub.dd, with the voltage at node 370 and the voltage at node 360 going above V.sub.dd due to voltage stored on bootstrap capacitor 350. FET 335 turns off since the gate-to-source voltage of FET 335 is less than its threshold voltage V.sub.T.

[0038] Since the gate-to-source voltage of the high side FET 385 is approximately equal to the voltage stored on the bootstrap capacitor 350 and is maximized to approximately V.sub.dd (instead of V.sub.dd minus the gate-to-source voltage of the FET 135 in the circuit shown in FIG. 1) when the input is logic low (the driving mode), faster pulling “out” to V.sub.dd is achieved.

[0039] The high side FET 385 and the low side FET 395, and the other three FETs in the active bootstrapping gate driver circuit 300 of FIG. 3 (and all FETs in the circuits of the other embodiments described below) are preferably enhancement mode GaN FET semiconductor devices, which are monolithically integrated onto a single semiconductor die. Because GaN FETs are able to carry large currents, support high voltages, and switch more quickly than conventional transistors, they enable the active bootstrapping gate driver circuits of the present invention 300 to provide quicker turn-on and turn-off times than similar circuits implementing other transistors, such as MOSFETs.

[0040] A potential issue with the bootstrap circuit of FIG. 3 is that, for FETs with a high threshold voltage (V.sub.T), the voltage stored on capacitor 315 (which equals V.sub.dd - V.sub.GS_32S) during the driving mode (when the input is a logic low) may be limited. Therefore, FET 335 may not be fully turned on during the charging mode (when the input is logic high) and charging of bootstrap capacitor 350 will become slow.

[0041] The active charging circuit of the present invention shown in FIG. 3 can be extended to cascaded bootstrapping drivers, as illustrated in FIGS. 4A and 4B, where like reference numbers in the 400′s of FIG. 4 represent corresponding elements in the 300′s of FIG. 3, with A and B suffixes added to represent the additional (cascaded) stage.

[0042] FIG. 4A shows a conventional bootstrapping driver, as disclosed in U.S. Pat. No. 10,790,811, the disclosure of which is incorporated by reference. In the cascaded embodiment of the present invention shown in FIG. 4B, the diode-connected FETs (425, 425A and 432B) are replaced with active charging FETs (435). Only one diode-connected FET 425 and one secondary bootstrap capacitor 415 are needed to control the gates of the active charging FETs 435.

[0043] Referring to FIG. 5, in a further embodiment of the active bootstrapping gate driver of the present invention, a second active charging FET (535B) is added to the diode-connected FET (525) and the second bootstrap capacitor (515) to mitigate the potential issue of limited voltage stored on the bootstrap capacitor in the active bootstrapping driver of FIG. 3. Again, like reference numbers in the 500′s of FIG. 5 represent corresponding elements in the 300′s of FIG. 3, and A and B suffixes are added to represent the original active charging FET 535A corresponding to FET 335 of FIG. 3, and 535B identifies the additional (second) active charging FET. The gate of FET 535B can be either connected to node 570 (as shown in FIG. 5) or to node 560 (not shown in FIG. 5B).

[0044] The purpose of FET 535B is to charge capacitor 515 to approximately V.sub.dd, instead of to V.sub.dd - V.sub.GS_.sub.535A when the input is a logic low (driving mode). During this mode, the output is approximately at V.sub.dd, and the voltage at node 560 and node 570 will be above V.sub.dd by another V.sub.dd to keep FET 535B turned on with low on-resistance.

[0045] When the input is a logic high (charging mode), FET 535B is off since the voltage at node 575 is at a voltage higher than V.sub.dd and is higher than voltage at node 560 (which is at ground) or the voltage at node 570 (which is at approximately V.sub.dd due to FET 535A turning on).

[0046] Diode-connected FET 525 may still be needed. During startup with the input at logic low, FET 525 will charge up capacitor 515 without relying on FET 535B, which may not turn on if bootstrap capacitor 550 is not yet charged.

[0047] For the cascaded active bootstrapping driver shown in FIG. 4B, only one extra active charging FET for the second bootstrap capacitor 415 is required. Again, the gate of this active charging FET can either connect to the source of the active charging FET 475A or the gate of the high side (pull-up FET),

[0048] Turning now to FIG. 6, if the complimentary input (logically inversed input) -- input B -- is also available, the second active charging FET 635B can be controlled by another active charging circuit consisting of a third bootstrap capacitor 615C, a third charging FET 635C and a second diode-connected FET 625B. The third charging FET 635C can be in turn controlled by the second bootstrap capacitor 615B to charge up capacitor 615C.

[0049] When two or more active bootstrapping drivers are coupled in cascade, the active charging FET for charging the first bootstrap capacitor in each driver can be controlled by the first bootstrap capacitor in the preceding driver, as illustrated in FIG. 7. The active bootstrapping driver 500 is the preceding driver of the active bootstrapping driver 700. The output of driver 500, output1, is coupled to the input of driver 700. The gate, 775, of the active charging FET 735 in driver 700 is not controlled by the second bootstrap capacitor, the diode-connected FET and/or the second active charging FET inside driver 700. Instead, the gate 775 of the active charging FET 735 in driver 700 is coupled to the first bootstrap capacitor 550 of the preceding driver 500 on node 570.

[0050] When output1 is logic high (equal to V.sub.dd), FET 755 and FET 795 are on, while the high side FET 785 is off. Due to the voltage stored on the first bootstrap capacitor 550 in driver 500, the gate 775 of the active charging FET 735 (coupled to node 570) will be driven to be equal to V.sub.dd plus voltage stored on capacitor 550. As a result, FET 735 is turned on with low resistance between the drain and the source terminals such that the first bootstrap capacitor 750 in driver 700 will be charged to V.sub.dd.

[0051] When output1 is logic low, FET 755 and FET 795 are off , while the high side FET 785 is on. The output2 will be pulled to V.sub.dd with the voltage on node 770 being pulled to V.sub.dd plus voltage stored on capacitor 750. The active charging FET 535A in driver 500 will be turned on, setting the voltage on node 570 (and hence the gate 775 of FET 735 in driver 700) to V.sub.dd. As a result, the active charging FET 735 in driver 700 will be off, allowing the voltage on node 770 (and hence, the gate voltage of FET 785) to be higher than V.sub.dd for pulling output2 to V.sub.dd.

[0052] When an additional active bootstrapping driver is coupled to the output, output2, of the driver 700, the voltage on node 770 can be used for controlling the active charging FET inside this additional driver. As a result, the second bootstrap capacitor connected to the input, the diode-connected FET and the second active charging FET within each cascaded driver are not required, except for the first active bootstrapping driver, when a number of active bootstrapping drivers are cascaded. This advantageously reduces the required die area for implementing drivers for driving large output loads.

[0053] In summary, compared to the conventional bootstrapping driver that charges the bootstrap capacitor with a diode or diode-connected FET, the voltage stored on the bootstrap capacitor of the active bootstrapping gate driver circuit of the present invention can be charged up to the supply voltage without any diode voltage drop. As a result, when the voltage stored on the bootstrap capacitor is applied to the high side (pull-up) FET of the half bridge circuit, a relatively larger gate-to-source on the high side FET is obtained to achieve a driver with faster pull-up.

[0054] The active bootstrapping circuit of the present invention can be used effectively with diodes or diode-connected FETs (as shown). However, the use of diode-connected FETs with a relatively high threshold voltage in the preferred embodiments disclosed herein is more robust to process, and more robust with respect to voltage and temperature variations.

[0055] The above description and drawings are only to be considered illustrative of specific embodiments, which achieve the features and advantages described herein. Modifications and substitutions to specific process conditions can be made. Accordingly, the embodiments of the invention are not considered as being limited by the foregoing description and drawings.