INTERLAYER FOR LIGHT EMITTING DIODE DEVICE

Abstract

The present invention is a light emitting diode (LED) device including a substrate, a buffer layer, a first conductivity type semiconductor layer, a light emitting layer, an interlayer, an electron blocking layer, and a second conductivity type semiconductor layer. The thickness of the interlayer is substantially thinner than the thickness of the electron blocking layer. In an embodiment of the present invention, the interlayer is doped with a p-type dopant, and the electron blocking layer is doped with a p-type dopant, and the concentration of the p-type dopant of the interlayer is lower than the concentration of the p-type dopant of the electron blocking layer.

Claims

1. A light emitting diode (LED) device comprising: a substrate, a buffer layer, a first conductivity type semiconductor layer, a light emitting layer, an interlayer, an electron blocking layer, and a second conductivity type semiconductor layer stacking in sequence, wherein the thickness of the interlayer is substantially thinner than the thickness of the electron blocking layer.

2. The device of claim 1, wherein the interlayer is comprised of aluminum nitride and the electron blocking layer is comprised of aluminum gallium nitride.

3. The device of claim 1, wherein the thickness of the interlayer is greater than or equal to 1 nm and less than 10 nm, and the thickness of the electron blocking layer is greater than or equal to 10 nm and less than 50 nm.

4. A light emitting diode (LED) device comprising: a substrate, a buffer layer, a first conductivity type semiconductor layer, a light emitting layer, an interlayer, an electron blocking layer, and a second conductivity type semiconductor layer stacking in sequence, wherein the interlayer is doped with a p-type dopant, and the electron blocking layer is doped with a p-type dopant, and wherein the concentration of the p-type dopant of the interlayer is lower than the concentration of the p-type dopant of the electron blocking layer.

5. The device of claim 4, wherein the interlayer is comprised of aluminum nitride and the electron blocking layer is comprised of aluminum gallium nitride.

6. The device of claim 4, wherein the concentration of the p-type dopant of the interlayer is greater than or equal 1×10.sup.17 (atom/cm.sup.3) and less than 2×10.sup.18 (atom/cm.sup.3), and the concentration of the p-type dopant of the electron blocking layer is greater than or equal 2×10.sup.18 (atom/cm.sup.3) and less than or equal to 3×10.sup.19(atom/cm.sup.3).

7. A method for fabricating a light emitting diode comprising the steps of: (a) forming a substrate; (b) forming a buffer layer on the substrate; (c) forming a first conductivity type semiconductor layer on the buffer layer; (d) forming a light emitting layer on the first conductivity type semiconductor layer; (e) forming an interlayer on the light emitting layer; (f) forming an electron blocking layer on the interlayer; and (g) forming a second conductivity type semiconductor layer on the interlayer; and wherein the thickness of the interlayer is substantially thinner than the thickness of the electron blocking layer.

8. The method of claim 7, wherein the thickness of the interlayer is greater than or equal to 1 nm and less than 10 nm, and the thickness of the electron blocking layer is greater than or equal to 10 nm and less than 50 nm.

9. The method of claim 7, wherein the inter layer is doped with p-type dopant having a predetermined concentration, and the electron blocking layer is doped with a p-type dopant having a predetermined concentration higher than the concentration of the dopant of the interlayer.

10. The method of claim 7, wherein the concentration of the p-type dopant of the interlayer is greater than or equal 1×10.sup.17 (atom/cm.sup.3) and less than 2×10.sup.18 (atom/cm.sup.3), and the concentration of the p-type dopant of the electron blocking layer is greater than or equal 2×10.sup.18 (atom/cm.sup.3) and less than or equal to 3×10.sup.19 (atom/cm.sup.3).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The invention can be more fully understood by reading the following detailed description of the embodiment, with reference made to the accompanying drawings as follows:

[0010] FIG. 1 is a schematic cross-sectional diagram of a light emitting diode device according to an embodiment of the present disclosure;

[0011] FIG. 2 is a light output power (a.u.) as a function of wavelength (nm) diagram of a light emitting diode device according to an embodiment of the present disclosure; and

[0012] FIG. 3 is a light output power (a.u.) as a function of wavelength (nm) diagram of a light emitting diode device according to another embodiment of the present disclosure.

DETAILED DESCRIPTION

[0013] In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically depicted in order to simplify the drawings.

[0014] An ultraviolet light emitting diode (UV-LED) is a high-energy device, so electron leakage is particularly severe, an electron blocking layer, typically composed of an aluminum nitride compound, is utilized to decrease electron leakage.

[0015] The present invention is a light emitting diode (LED) device 100 including a substrate 110, a buffer layer 120, a first conductivity type semiconductor layer 130, a light emitting layer 140, an interlayer 150, an electron blocking layer 160, and a second conductivity type semiconductor layer 170. The thickness of the interlayer 150 is substantially thinner than the thickness of the electron blocking layer 160.

[0016] In a preferred embodiment of the present invention, the interlayer 150 includes aluminum nitride and the electron blocking layer 160 includes aluminum gallium nitride.

[0017] In a preferred embodiment of the present invention, the thickness of the interlayer 150 is greater than or equal to 1 nm and less than 10 nm, and the thickness of the electron blocking layer 160 is greater than or equal to 10 nm and less than 50 nm.

[0018] FIG. 2 shows the light output power (a.u.) as a function of wavelength (nm) in which the lower curve 200 indicates light output power of an UV LED having only an EBL, and the upper curve 300 shows that light output power has increased over almost all the wavelength interval of the FIG. 2 for an embodiment of the present invention utilizing an interlayer as an embodiment of the present invention.

[0019] FIG. 3 shows the light output power as a function of wavelength for an UV LED device having an EBL of 50 nm thickness, according to the present invention, the lowest curve 400 indicates the light output power of an UV LED having the EBL with an interlayer of a thickness thicker than that of EBL, the lower curve 500 indicates the light output power of an UV LED having the EBL with an interlayer of 10 nm thickness, and the upper curve 600 indicates the light output power of an UV LED having the EBL with an interlayer of 10 nm thickness. These experimental results show that the thinner interlayer is, the greater light output power over almost all the wavelength interval of the FIG. 3 the UV LED has.

[0020] In an embodiment of the present invention, the interlayer 150 is doped with a p-type dopant, and the electron blocking layer 160 is doped with a p-type dopant, and the concentration of the p-type dopant of the interlayer 150 is lower than the concentration of the p-type dopant of the electron blocking layer 160.

[0021] In another embodiment of the present invention, the interlayer 150 includes aluminum nitride and the electron blocking layer 160 includes aluminum gallium nitride.

[0022] In yet another embodiment of the present invention, the concentration of the p-type dopant of the interlayer 150 is greater than or equal 1×10.sup.17 (atom/cm.sup.3) and less than 2×10.sup.18 (atom/cm.sup.3), and the concentration of the p-type dopant of the electron blocking layer 160 is greater than or equal 2×10.sup.18 (atom/cm.sup.3) and less than or equal to 3×10.sup.19 (atom/cm.sup.3). If the concentration of the p-type dopant of the interlayer 150 is greater than 2×10.sup.18 (atom/cm.sup.3), the interlayer may turn into n-type rather than p-type, so that the position of electron-hole combination will shift away from the light emitting layer and the wavelength of output light will deviate from predetermined range.

[0023] The present invention also includes a method for fabricating a light emitting diode including the steps of forming a substrate, forming a buffer layer on the substrate, forming a first conductivity type semiconductor layer on the buffer layer, forming a light emitting layer on the first conductivity type semiconductor layer, forming an interlayer on the light emitting layer, forming an electron blocking layer on the interlayer, and forming a second conductivity type semiconductor layer on the interlayer. The thickness of the interlayer is substantially thinner than the thickness of the electron blocking layer.

[0024] The present invention also discloses a method for fabricating a light emitting diode including the steps of forming a substrate, forming a buffer layer on the substrate, forming a first conductivity type semiconductor layer on the buffer layer, forming a light emitting layer on the first conductivity type semiconductor layer, forming an interlayer on the light emitting layer, doping the interlayer with a p-type dopant having a predetermined concentration, forming an electron blocking layer on the interlayer, doping the electron blocking layer with a p-type dopant having a predetermined concentration higher than the concentration of the dopant of the interlayer, and forming a second conductivity type semiconductor layer on the interlayer.

[0025] In one method of the present invention, the concentration of the p-type dopant of the interlayer is greater than or equal 1×10.sup.17 (atom/cm.sup.3) and less than 2×10.sup.18 (atom/cm.sup.3), and the concentration of the p-type dopant of the electron blocking layer is greater than or equal 2×10.sup.18 (atom/cm.sup.3) and less than or equal to 3×10.sup.19(atom/cm.sup.3).

[0026] While this specification contains many specifics, these should not be construed as limitations on the scope of the invention or of what may be claimed, but rather as descriptions of features specific to particular embodiments of the invention. Certain features that are described in this specification in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any appropriate suitable sub-combination. Moreover, although features may be described above as acting in certain combinations and even initially claimed as such, one or more features from a claimed combination can in some cases be excised from the combination, and the claimed combination may be directed to a sub-combination or variation of a sub-combination.

[0027] Any element in a claim that does not explicitly state “means for” performing a specified function, or “step for” performing a specific function, is not to be interpreted as a “means” or “step” clause as specified in 35 U.S.C. § 112, 6th paragraph. In particular, the use of “step of” in the claims herein is not intended to invoke the provisions of 35 U.S.C. §112, 6th paragraph.