PIXEL MODULE AND DISPLAY APPARATUS HAVING THE SAME
20230178700 · 2023-06-08
Assignee
Inventors
Cpc classification
G09G2300/0443
PHYSICS
H01L33/62
ELECTRICITY
H01L33/504
ELECTRICITY
H01L33/44
ELECTRICITY
International classification
H01L33/62
ELECTRICITY
H01L27/15
ELECTRICITY
H01L25/075
ELECTRICITY
Abstract
A pixel module and a display apparatus having the same are provided. A display apparatus according to an embodiment includes a panel substrate and a plurality of pixel modules disposed on the panel substrate, in which each of the pixel modules includes a linking substrate including at least one interconnection region and a non-interconnection region adjacent to the interconnection region and a plurality of unit pixels disposed on each of the interconnection regions of the linking substrate.
Claims
1. A display apparatus, comprising: a panel substrate; and a plurality of pixel modules disposed on the panel substrate, each of the pixel modules including: a linking substrate including at least one interconnection region and a non-interconnection region adjacent to the interconnection region; and a plurality of unit pixels disposed on each of the interconnection regions of the linking substrate.
2. The display apparatus of claim 1, wherein the linking substrate includes top pads for mounting the unit pixels and bottom pads for being mounted on the panel substrate, and the number of the bottom pads is smaller than the number of the top pads.
3. The display apparatus of claim 2, wherein the top pads have a multi-layered structure.
4. The display apparatus of claim 2, wherein at least one of the bottom pads is a dummy pad.
5. The display apparatus of claim 1, wherein a shortest distance W3 between a center of the unit pixel and an edge of the pixel module is less than ½ of an average distance W1 between centers of unit pixels adjacent to one another on a same interconnection region.
6. The display apparatus of claim 5, wherein: the linking substrate includes a plurality of interconnection regions, and a center-to-center distance W2 of unit pixels disposed on adjacent interconnection regions, respectively, and adjacent to one another is within a range of ±10% of the average distance W1 between the centers of unit pixels adjacent to one another on the same interconnection region.
7. The display apparatus of claim 1, wherein the linking substrate includes a plurality of interconnection regions, and the plurality of interconnection regions has a same interconnection pattern.
8. The display apparatus of claim 1, further comprising: a first molding member covering a region between the linking substrates; and a second molding member covering a region between the unit pixels.
9. The display apparatus of claim 8, further comprising: an adhesive layer disposed on the second molding member; and an anti-glare layer disposed on the adhesive layer.
10. The display apparatus of claim 9, wherein the first and second molding members are black and the adhesive layer is transparent.
11. A pixel module for a display apparatus, comprising: a linking substrate including at least one interconnection region and a non-interconnection region adjacent to the interconnection region, and a plurality of unit pixels disposed on each of the interconnection regions of the linking substrate.
12. The pixel module of claim 11, wherein the linking substrate includes top pads for mounting the unit pixels and bottom pads for being mounted on the panel substrate, and the number of the bottom pads is smaller than the number of the top pads.
13. The pixel module of claim 12, wherein at least one of the bottom pads is a dummy pad.
14. The pixel module of claim 12, wherein: each of the unit pixels includes three LEDs, LED groups emitting light of a same color in unit pixels disposed in a same row are electrically connected to same bottom pads, respectively, and LEDs disposed in a same column are electrically connected to a single same bottom pad.
15. The pixel module of claim 11, wherein the linking substrate includes a plurality of interconnection regions, and the plurality of interconnection regions has a same interconnection pattern.
16. The pixel module of claim 15, wherein a center-to-center distance W2 of unit pixels disposed on adjacent interconnection regions, respectively, and adjacent to one another is within a range of ±10% of an average distance W1 between centers of unit pixels adjacent to one another on a same interconnection region.
17. The pixel module of claim 11, wherein a shortest distance W3 between the center of the unit pixel and an edge of the pixel module is less than ½ of the average distance W1 between the centers of unit pixels adjacent to one another on the same interconnection region.
18. The pixel module of claim 11, wherein: the linking substrate includes a plurality of interconnection regions and non-interconnection regions adjacent to each of the interconnection regions, and each of the interconnection regions includes a plurality of top pads disposed on an upper surface thereof and a plurality of bottom pads disposed on a lower surface thereof.
19. The pixel module of claim 18, wherein in each of the interconnection regions, the number of bottom pads is smaller than the number of top pads.
20. The pixel module of claim 18, wherein the top pads have a multilayer structure.
Description
DESCRIPTION OF DRAWINGS
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DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS
[0055] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The following exemplary embodiments are provided by way of example so as to fully convey the spirit of the present disclosure to those skilled in the art to which the present disclosure pertains. Accordingly, the present disclosure is not limited to the embodiments disclosed herein and can also be implemented in different forms. In the drawings, widths, lengths, thicknesses, and the like of elements can be exaggerated for clarity and descriptive purposes. When an element or layer is referred to as being “disposed above” or “disposed on” another element or layer, it can be directly “disposed above” or “disposed on” the other element or layer or intervening elements or layers can be present. Throughout the specification, like reference numerals denote like elements having the same or similar functions.
[0056]
[0057] Referring to
[0058] The display apparatus 10000 is not particularly limited, but may include a smart watch 1000a, a wearable display apparatus 1000b such as a VR headset or glasses, an AR display apparatus 1000c such as augmented reality glasses, or an indoor or outdoor display apparatus 1000d or 1000e such as a micro LED TV or signage. The panel substrate 2100 and the plurality of pixel modules 1000 may be disposed in the display apparatus.
[0059] The panel substrate 2100 may include a circuit for a passive matrix driving or active matrix driving manner. In an exemplary embodiment, the panel substrate 2100 may include wirings and resistors therein, and, in another exemplary embodiment, the panel substrate 2100 may include wirings, transistors, and capacitors. The panel substrate 2100 may also have pads that are capable of being electrically connected to the disposed circuit on an upper surface thereof.
[0060] In an exemplary embodiment, the plurality of pixel modules 1000 is arranged on the panel substrate 2100. Each of the pixel modules 1000 may include a linking substrate 1001a, and a plurality of unit pixels 100 disposed on the linking substrate 1001a, and may include a molding member covering the unit pixels 100.
[0061] A brightness of the smart watch 1000a may be 500 to 1500 cd/m.sup.2 (or nits) or more, and a brightness thereof may be adjusted according to an external illumination. A brightness of the wearable display apparatus 1000b such as a VR headset or glasses may be 150 to 200 cd/m.sup.2 (or nits), or a viewing angle thereof may be 50 degrees or more. The indoor or outdoor display apparatus 1000d or 1000e such as Micro LED TV or signage is preferably 1000 cd/m.sup.2 (or nits) or more, or 80 degrees or more viewing angle, especially for outdoor use, 3000 cd/m.sup.2 (or nits) or more. In the display apparatus 1000d or 1000e, a plurality of panels P1 and P2 is arranged in rows and columns and attached to a frame, and a plurality of micro LED pixels is disposed on the plurality of panels P1 and P2 to supply electricity or signals, and thus, the display apparatus may be turned on or its luminous intensity may be adjusted according to electricity supply or signals. The plurality of panels P1 and P2 may be connected to an external power source using respective connectors, or the plurality of panels P1 and P2 may be electrically connected to one another using connectors.
[0062] Hereinafter, various unit pixels 100 will be described in detail with reference to
[0063]
[0064] Referring to
[0065] The light emitting structures 21a, 21b, and 21c of the light emitting diode chips 10a, 10b, and 10c include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, respectively. Although not shown in the drawings, the light emitting diode chips 10a, 10b, and 10c may further include an ohmic contact layer in ohmic contact with the second conductivity type semiconductor layer, first and second contact pads, and an insulation layer. The electrode pads 23a, and 23b may be electrically connected to the first and second conductivity type semiconductor layers by being connected to the first and second contact pads.
[0066] In an embodiment, in a case of the red light emitting diode chip 10a, the semiconductor layers may include aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP), or gallium phosphide (GaP).
[0067] In a case of the green light emitting diode chip 10b, the semiconductor layers may include indium gallium nitride (InGaN), gallium nitride (GaN), gallium phosphide (GaP), aluminum gallium indium phosphide (AlGaInP), or aluminum gallium phosphide (AlGaP).
[0068] In an embodiment, in a case of the blue light emitting diode chip 10c, the semiconductor layer may include gallium nitride (GaN), indium gallium nitride (InGaN), or zinc selenide (ZnSe).
[0069] The first conductivity type and the second conductivity type have opposite polarities, when the first conductivity type is an n-type, the second conductivity type is a p-type, and when the first conductivity type is a p-type, the second conductivity type become an n-type.
[0070] The first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer may be grown on a growth substrate in a chamber using a known method such as metal organic chemical vapor deposition(MOCVD). The active layer of each of the light emitting diode chips may include a single quantum well structure or a multi-quantum well structure, and a composition ratio of semiconductors is adjusted so as to emit a desired wavelength.
[0071] The light emitting diode chips 10a, 10b, and 10c may be directly mounted on the linking substrate 1001a using the electrode pads 23a, and 23b.
[0072] Referring to
[0073] Referring to
[0074] The light emitting diode chips 10 may emit ultraviolet or blue light, and the wavelength conversion material layers 41a, 41b, and 41c may convert light emitted from the light emitting diode chips 10 into red, green, and blue, respectively. When the light emitting diode chip 10 emits blue light, the wavelength conversion material layer 41c may be omitted.
[0075] The wavelength conversion material layer 41c may include phosphors or quantum dots. For red, green, and blue phosphors, known phosphors may be used. The quantum dots may include group II-VI, group III-V, group IV-VI, group I-III-VI, and group II-IV-VI semiconductors as semiconductor materials, alloys or mixtures thereof. In particular, they may include CdSe, InAs, ZnSe, InP, GaP, CD, ZnS, HgTe, PbSe, and a ternary system such as CuInS.sub.2, and may also include a doped material.
[0076] The quantum dots may be round or rod-shaped, the round-type quantum dots may have a size of about 2 nm to 20 nm, and the rod-shaped quantum dots may have a size of about 9×12 nm.
[0077] Referring to
[0078] In an embodiment, the first semiconductor stack 51a emits red light, the second semiconductor stack 51b emits green light, and the third semiconductor stack 51c emits blue light. In another embodiment, the second semiconductor stack 51b may emit blue light and the third semiconductor stack 51c may emit green light.
[0079] The unit pixel 100d also includes electrode pads 53. Although two electrode pads 53 are shown in the drawing, in this embodiment, at least four electrode pads 53 may be disposed. One electrode pad may be commonly electrically connected to the first through third semiconductor stacks 51a, 51c, and 51d, and three electrode pads 53 may be individually electrically connected to the first through third semiconductor stacks 51a, 51b, and 51c. For example, one electrode pad may be commonly electrically connected to cathodes of the first through third semiconductor stacks 51a, 51c, and 51d, and three electrode pads 53 may be individually electrically connected to anodes of the first through third semiconductor stacks 51a, 51b, and 51c, or vice versa.
[0080] Although various structures of the unit pixel 100 have been described above, the present disclosure is not limited thereto. The unit pixel 100 may be provided in various structures in addition to the structures described above, and any structure may be included in the present disclosure as long as it emits three primary colors of red, green, and blue.
[0081] The unit pixel 100 is disposed on the linking substrate 1001a and mounted on a panel substrate 2100. The linking substrate 1001a buffers a difference in line widths between fine interconnections connecting small-sized pixels and interconnections of the panel substrate 2100. Accordingly, an interval between pixels may be further reduced. Furthermore, since the pixels are disposed on the panel substrate 2100 by forming a pixel module 1000 and disposing the pixel module 1000 on the panel substrate 2100, the pixel module 1000 may be repaired or replaced after checking a defective pixel in each pixel module 1000. Since the pixel module instead of an entire display apparatus needs to be replaced or repaired, there is no need to repair or discard the entire display apparatus, thereby reducing costs due to defects.
[0082] The linking substrate 1001a may be individually singularized, and a linking substrate 1001 before being singulation has a large area capable of manufacturing a plurality of pixel modules 1000.
[0083] Referring to
[0084] The interconnection regions IA may include a same interconnection pattern. The interconnection pattern formed in the interconnection region IA may be changed according to the number of pixels mounted on the interconnection region IA. In addition, top pads (not shown) for mounting the unit pixel 100 are disposed in the interconnection region IA, and bottom pads for mounting the linking substrate 1001a on the panel substrate 2100 are disposed a bottom surface of the linking substrate 1001. The number of bottom pads is smaller than the number of top pads. This will be explained in detail later again.
[0085]
[0086] Referring to
[0087] In an embodiment, when the unit pixel 100 has four electrode pads, and four unit pixels 100 are mounted on each of the interconnection regions IA, each of the interconnection regions IA includes at least 16 top pads, and has at least 8 bottom pads. To drive the unit pixels 100 arranged in an n×m matrix, at least 4×n×m top pads and at least (3×n+m) bottom pads may be disposed.
[0088] In another embodiment, as described with reference to
[0089] As the number of unit pixels 100 disposed in each of the interconnection regions IA increases, the interconnection of the panel substrate 2100 may be further simplified, and thus, heat generation of the panel substrate 2100 may be reduced.
[0090] The linking substrate 1001 may be cut into various sizes, and thus, pixel modules 1000 having various structures may be provided.
[0091] Referring to
[0092] Referring to
[0093] Referring to
[0094] The linking substrate 1001 may be cut so as to include one or more interconnection regions IA disposed in one row, but the present disclosure is not limited thereto. The linking substrate 1001 may be cut so as to include interconnection regions IA disposed in two or more rows.
[0095] Referring to
[0096]
[0097] Referring to
[0098] In addition, a center-to-center distance W2 of the unit pixels 100 disposed on the interconnection regions IA adjacent to one another, respectively, and adjacent to one another may be within a range of W1±10%. Meanwhile, a shortest distance W3 from the center of the unit pixel 100 to an edge of the linking substrate 1001a may be less than ½ of the W1. However, the W3 may be larger than ½ of a width of the unit pixel 100.
[0099] When the W3 is ½ of the W1, the pixel modules 1000 mounted on the panel substrate 2100 may be in close contact with one another. When the W3 is smaller than ½ of the W1, the pixel modules 1000 mounted on the panel substrate 2100 may be spaced apart from one another.
[0100]
[0101] Referring to
[0102] The linking substrate 1001a has the multi-layered interconnection structure, and interconnections in each layer may also have the multi-layered structure. For example, as shown in
[0103] Referring to
[0104] Meanwhile, LED groups arranged in a same column are commonly electrically connected to the bottom pads C1 and C2, respectively. Six LEDs disposed in a first column are commonly electrically connected to the bottom pad C1, and six LEDs disposed in a second column are commonly electrically connected to the bottom pad C2.
[0105]
[0106] Referring to
[0107] Six unit pixels 100 are disposed in each interconnection region. Since three light emitting diode chips 10a, 10b, and 10c are disposed in each unit pixel, a total of 18 light emitting diode chips 10a, 10b, and 10c are disposed in one interconnection region. Accordingly, 36 top pads are disposed in the interconnection region.
[0108] Referring to
[0109] Referring to
[0110]
[0111] First, referring to
[0112] The pixel module 1000 may be mounted by bonding bottom pads 1005 of the linking substrate 1001a to pads 2150 of the panel substrate 2100. The bottom pads 1005 may be mounted on the panel substrate 2100 using, for example, an ACF (1007 in
[0113] Referring to
[0114] Referring to
[0115] The second molding member 2500 may have a flat upper surface, without being limited thereto. For example, the second molding member 2500 may have a concave shape in a region between the unit pixels 100. In this embodiment, the second molding member 2500 is illustrated and described as covering upper surfaces of the unit pixels 100, but the present disclosure is not limited thereto. That is, the second molding member 2500 may be formed so as to expose the upper surfaces of the unit pixels 100.
[0116] Referring to
[0117] For example, the anti-glare layer 2900 may be coated using a spray coating technique. Additionally, the anti-glare layer 2900 may be cured using ultraviolet rays.
[0118] The anti-glare layer 2900 may prevent glare by scattering light by including, for example, fine particles of silica, melamine, acryl, or the like, and may improve clarity and smoothness of a surface while maintaining high transmittance.
[0119] The anti-glare layer 2900 may include, for example, fine particles such as silica, melamine, and acrylic together with polymers such as acryl, silicone, and urethane. Anti-glare effect may be adjusted by adjusting densities and sizes of the particles, a thickness of the anti-glare layer 2900, and the like.
[0120] Although certain exemplary embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Accordingly, the inventive concepts are not limited to such embodiments, but rather to the broader scope of the appended claims and various obvious modifications and equivalent arrangements as would be apparent to a person of ordinary skill in the art.