Light extraction substrate for OLED and method of fabricating the same
09825257 · 2017-11-21
Assignee
Inventors
- June Hyoung Park (ChungCheongNam-Do, KR)
- Young Zo Yoo (ChungCheongNam-Do, KR)
- Tae Jung Park (ChungCheongNam-Do, KR)
- Seo Hyun Kim (Chungcheongnam-do, KR)
- Il Hee Baek (ChungCheongNam-Do, KR)
- Gun Sang Yoon (Chungcheongnam-do, KR)
- Eun Ho Choi (Chungcheongnam-do, KR)
Cpc classification
Y10T428/24612
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
B32B7/03
PERFORMING OPERATIONS; TRANSPORTING
B32B5/145
PERFORMING OPERATIONS; TRANSPORTING
Y10T428/2462
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10T428/24355
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10T428/24545
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10T428/24595
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
B32B3/30
PERFORMING OPERATIONS; TRANSPORTING
Y10T428/24521
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10T428/24273
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
International classification
B32B3/30
PERFORMING OPERATIONS; TRANSPORTING
B32B7/00
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A light extraction substrate for an organic light-emitting device (OLED) which can improve the brightness of a display or an illumination system to which an OLED is applied by improving light extraction efficiency and a method of manufacturing the same. The light extraction substrate for an OLED includes an oxide or nitride thin film formed on a substrate body. The oxide or nitride thin film includes a base layer formed on the substrate body, a first texture formed on the base layer, the first texture having a plurality of first protrusions which protrude continuously or discontinuously from the base layer, and a second texture having a plurality of second protrusions which protrude continuously or discontinuously from each outer surface of the first protrusions.
Claims
1. A light extraction substrate for an organic light-emitting device comprising an oxide or nitride thin film formed on a substrate body, wherein the oxide or nitride thin film comprises: a base layer formed on the substrate body; a first texture formed on the base layer, the first texture comprising a plurality of first protrusions which protrude continuously or discontinuously from the base layer; and a second texture comprising a plurality of second protrusions which protrude continuously or discontinuously from each outer surface of the first protrusions, wherein the base layer has fewer voids therein than the first texture, wherein the oxide or nitride thin film comprises a material selected from the group consisting of ZnO, TiO2, SnO2, SrTiO3, VO2, V2O3, SrRuO3, TiN, and mixtures thereof, wherein a thickness of the oxide or nitride thin film ranges from 1 to 12 μm, wherein a thickness of the base layer ranges from 0.01 to 1 μm, wherein a height of the first protrusions ranges from 0.05 to 10 μm, and wherein a thickness of the base layer is 25% or less of a thickness of the first texture.
2. The light extraction substrate of claim 1, wherein a refractive index of the oxide or nitride thin film is greater than a refractive index of the substrate body.
3. The light extraction substrate of claim 1, wherein the oxide or nitride thin film comprises a dopant of at least one selected from a metal group consisting of Mg, Cd, S, Se, Te, F, Ga, Al, Mn, Co, Cu, Nb, Nd, Sr, W and Fe.
4. The light extraction substrate of claim 1, comprising an average transmittance of 40% or greater in a wavelength range from 380 to 800 nm.
5. The light extraction substrate of claim 1, wherein a pitch of the first protrusions is 10 μm or less.
6. The light extraction substrate of claim 1, wherein the shortest width of each first protrusion ranges from 0.05 to 5 μm, and the orthogonal width to the shortest width of each first protrusion ranges from 0.05 to 10 μm.
7. The light extraction substrate of claim 1, wherein the first protrusions have a shape selected from leaf, stacked hexagon and hexagonal prism.
8. The light extraction substrate of claim 1, wherein a surface of the base layer above which the first texture protrudes has a wave-like appearance.
9. The light extraction substrate of claim 1, wherein a pitch of the second protrusions ranges from 0.01 to 1 μm, and a height of the second protrusions ranges from 0.01 to 1 μm.
10. A method of manufacturing a light extraction substrate, comprising: forming a light extraction layer comprising an oxide or nitride thin film on a substrate body via atmospheric pressure chemical vapor deposition, the light extraction layer comprising an oxide or nitride thin film, wherein the light extraction layer includes: a base layer on the substrate body; a first texture formed on the base layer, the first texture having a plurality of first protrusions which protrude continuously or discontinuously from the base layer; and a second texture having a plurality of second protrusions which protrude continuously or discontinuously from each outer surface of the first protrusions, wherein the base layer has fewer voids therein than the first texture, wherein the oxide or nitride thin film comprises a material selected from the group consisting of ZnO, TiO2, SnO2, SrTiO3, VO2, V2O3, SrRuO3, TiN, and mixtures thereof, wherein a thickness of the oxide or nitride thin film ranges from 1 to 12 μm, wherein a thickness of the base layer ranges from 0.01 to 1 μm, wherein a height of the first protrusions ranges from 0.05 to 10 μm, and wherein a thickness of the base layer is 25% or less of a thickness of the first texture.
11. The method of claim 10, further comprising treating the substrate body with plasma or a chemical before forming the light extraction layer via atmospheric pressure chemical vapor deposition.
12. The method of claim 10, further comprising treating the light extraction layer with plasma or a chemical after forming the light extraction layer via atmospheric pressure chemical vapor deposition.
13. The method of claim 10, wherein a pitch of the second protrusions ranges from 0.01 to 1 μm, and a height of the second protrusions ranges from 0.01 to 1 μm.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
DETAILED DESCRIPTION OF THE INVENTION
(9) Reference will now be made in detail to a light extraction substrate for an organic light-emitting device (OLED) and a method of fabricating the same according to the present invention, embodiments of which are illustrated in the accompanying drawings and described below, so that a person having ordinary skill in the art to which the present invention relates can easily put the present invention into practice.
(10) Throughout this document, reference should be made to the drawings, in which the same reference numerals and signs are used throughout the different drawings to designate the same or similar components. In the following description of the present invention, detailed descriptions of known functions and components incorporated herein will be omitted when they may make the subject matter of the present invention unclear.
(11) Referring to
(12) As shown in the figure, the OLED 10 includes the substrate body 11 which is a component of the light extraction substrate and serves as a front substrate. The OLED 10 also includes a rear substrate 15 which is disposed such that it faces the substrate body 11, first and second electrode layers 12 and 14 which are disposed between the front substrate (substrate body 11) and the rear substrate 15, an organic light-emitting layer 13 which is disposed between the first and second electrode layers 12 and 14, and a sealant 16 which is disposed on the periphery of the front substrate (substrate body 11) and the rear substrate 15 and in the space between the front substrate (substrate body 11) and the rear substrate 15 in order to protect the first and second electrode layers 12 and 14 and the organic light-emitting layer 13 from external environments.
(13) As shown in
(14) The substrate body 11 is a transparent substrate that can be made of any material as long as it has superior light transmittance and excellent mechanical properties. For instance, the substrate body 11 can be made of a polymeric material such as a thermosetting or ultraviolet (UV)-curable organic film or a chemically tempered glass such as a soda-lime glass (SiO.sub.2—CaO—Na.sub.2O) or an aluminosilicate glass (SiO.sub.2—Al.sub.2O.sub.3—Na.sub.2O), in which the amount of Na can be adjusted depending on the use. Here, the soda-lime glass can be used when the OLED is used for illumination, and the aluminosilicate glass can be used when the OLED is used for a display.
(15) According to an embodiment of the present invention, the substrate body 11 can be implemented as a thin glass having a thickness of 1.5 mm or less. The thin glass is made by a fusion process or a floating process.
(16) Referring to
(17) As shown in
(18) As shown in
(19) TABLE-US-00001 TABLE 1 μm a1 .sup. 0.01~1.0 b1 0.05~10 b2 0~10 b3 0.05~10 b4 0.05~5 c1 0.01~1 c2 0.01~1
(20)
(21)
(22) In addition,
(23) Reference will now be made to the method of manufacturing a light extraction substrate for an OLED according to an embodiment of the present invention. The method of manufacturing a light extraction substrate for an OLED according to an embodiment of the present invention will be described with reference to
(24) The method of manufacturing a light extraction substrate for an OLED according to an embodiment of the present invention forms the light extraction layer 100 that includes the base layer 110, the first texture 120 and the second texture 130 on the substrate body 11 by an atmosphere pressure chemical vapor deposition (APCVD) process. When the light extraction layer 100 is formed via APCVD, the base layer 110, the first texture 120 and the second texture 130 are naturally formed on the surface of the light extraction layer 100. That is, when the light extraction layer 100 is formed via APCVD, it is possible to omit the process of forming the textures, thereby simplifying the manufacturing process. This can consequently improve productivity, thereby enabling mass production.
(25) The APCVD process includes, first, loading the substrate body 11 into a process chamber (not shown), and the heating the substrate body 11 to a predetermined temperature. Afterwards, a precursor gas and an oxidizer gas are blown into the process chamber in order to form the light extraction layer via APCVD. It is preferable to control the precursor gas and the oxidizer gas to be fed along different paths in order to prevent the gasses from mixing before entering the process chamber. The precursor gas and the oxidizer gas can be preheated before being fed in order to promote a chemical reaction. The precursor gas can be fed on a carrier gas into the process chamber, the precursor gas being implemented as an inert gas such as nitrogen, helium or argon.
(26) When forming the light extraction layer 100 by the APCVD process, the surface of the substrate body 11 can be reformed via plasma or chemical treatment before APCVD in order to control the shape of the textured features, i.e. the first protrusions 121 and the second protrusions 131 of the first texture 120 and the second texture 130. In addition, when forming the light extraction layer 100 by the APCVD process, the surface of the substrate body 11 can be reformed via plasma or chemical treatment after APCVD in order to control the shape of the textures, i.e. the first texture 120 and the second texture 130, and the shape of the first protrusions 121 and the second protrusions 131 of the textures.
(27) When the APCVD process has been completed as above, a light extraction substrate for an OLED according to an embodiment of the present invention is manufactured.
(28) The foregoing descriptions of specific exemplary embodiments of the present invention have been presented with respect to the drawings. They are not intended to be exhaustive or to limit the present invention to the precise forms disclosed, and obviously many modifications and variations are possible for a person having ordinary skill in the art in light of the above teachings.
(29) It is intended therefore that the scope of the present invention not be limited to the foregoing embodiments, but be defined by the Claims appended hereto and their equivalents.