Socket for semiconductor chip test and method of manufacturing the same
09823299 ยท 2017-11-21
Inventors
Cpc classification
G01R1/0466
PHYSICS
G01R3/00
PHYSICS
G01R31/2884
PHYSICS
International classification
Abstract
Provided are a socket for a semiconductor chip test, and a method of manufacturing the same, the socket for the semiconductor chip test including: a film layer; a semiconductor chip test terminal disposed on the film layer and connected to a terminal of a semiconductor chip; and a conductive elastic pad disposed on the film layer and connected to a ground terminal of the semiconductor chip.
Claims
1. A socket for a semiconductor chip test, comprising: a film layer; a semiconductor chip test terminal disposed on the film layer and connected to a terminal of a semiconductor chip; and a conductive elastic pad disposed on the film layer and connected to a ground terminal of the semiconductor chip, wherein the film layer has a pad combination hole formed to dispose the conductive elastic pad using a laser process or a press process.
2. The socket of claim 1, wherein the conductive elastic pad is composed by including metal powder in silicone rubber and is disposed in a center portion of the film layer.
3. The socket of claim 1, wherein the conductive elastic pad includes a conductive area corresponding to the ground terminal of the semiconductor chip, wherein the conductive area is disposed in plural number on the conductive elastic pad.
4. The socket of claim 1, wherein the film layer is made of any one material of polyimide, polyethylene, polypropylene, and polyester, and is composed of a single film or multiple films.
5. A method of manufacturing a socket for a semiconductor chip test, the method comprising: disposing a semiconductor chip test terminal connected to a terminal of a semiconductor chip on a film layer; and disposing a conductive elastic pad connected to a ground terminal of the semiconductor chip on the film layer, wherein the disposing of the conductive elastic pad is performed by forming a pad combination hole for disposing the conductive elastic pad in the film layer using a laser process or a press process, and disposing the conductive elastic pad in the pad combination hole.
6. The method of claim 5, further comprising forming the conductive elastic pad by including metal power in silicon rubber at the time of disposing the conductive elastic pad.
7. The method of claim 5, wherein the disposing of the conductive elastic pad is performed by disposing the conductive elastic pad in a center portion of the film layer.
8. The method of claim 5, further comprising forming the conductive elastic pad to include a conductive area corresponding to the ground terminal of the semiconductor chip at the time of disposing the conductive elastic pad.
9. The method of claim 8, wherein the conductive area is formed to be disposed in plural number on the conductive elastic pad.
10. The method of claim 5, further comprising forming the film layer by laminating a second film on a first film before disposing the semiconductor chip test terminal.
11. The method of claim 5, wherein the disposing of the semiconductor chip test terminal is performed by forming a terminal hole on the film layer, and disposing the semiconductor chip test terminal in the terminal hole.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) A portion connected to the ground terminal of the semiconductor chip is composed of the conductive elastic pad, a ground contact area with the ground terminal is sufficiently obtained so that a frequency characteristic and heat generation problem at the time of performing a radio frequency (RF) semiconductor test can be solved.
(2)
(3)
(4)
(5)
DETAILED DESCRIPTION OF THE INVENTION
(6) Exemplary embodiments according to the present invention will now be described more fully hereinafter with reference to the accompanying drawings. In the following description, it is to be noted that, when the detailed description of publicly known functions or elements related with the present invention may make the gist of the present invention unclear, the detailed description thereof will be omitted. Also, it should be understood that the shape and size of the elements shown in the drawings may be exaggeratedly drawn to provide an easily understood description of the structure of the present invention, but it should not be interpreted that the shape and size of the elements mean a shape and size which are applied practically.
(7)
(8) The configuration of a socket for a semiconductor chip test according to one exemplary embodiment of the present invention will be described in detail with reference to
(9) As illustrated in
(10) The film layer 310 is made of any one material of polyimide, polyethylene, polypropylene, and polyester.
(11) The film layer 310 have a terminal hole 311 formed to dispose the semiconductor chip test terminal 320 using a laser process or a press process and a pad combination hole 312 formed to dispose the conductive elastic pad 330.
(12) At this time, the terminal hole 311 and the pad combination hole 312 are formed perpendicular to a width face of the film layer 310 at the time of the laser or press process.
(13) Meanwhile, the film layer 310 is configured by laminating a plurality of films, more preferably, two films as illustrated in
(14) The film layer 310 is configured by laminating the films as described above, and since a terminal hole 311 for disposing the semiconductor chip test terminal 320 and a pad combination hole 312 for disposing the conductive elastic pad 330 are formed in the film layer, it is advantageous in that the product expenses can be y reduced and the product can be efficiently produced, compared to a conventional socket configuration which is required to process a high-priced engineering plastic material for disposing the chip test terminal 320.
(15) The conductive elastic pad 330 is disposed on the film layer 310 and is connected to aground terminal of the semiconductor chip.
(16) At this time, the conductive elastic pad 330 is disposed in the pad combination hole 312 formed in a center portion of the film layer 310.
(17) The conductive elastic pad 330 is formed by including metal power in silicone rubber.
(18) Explaining it in more detail, the conductive elastic pad 330 includes a conductive area 331 formed to correspond to the ground terminal of the semiconductor chip, and the metal powder is included in the conductive area 331.
(19) As such, when a portion connected to the ground terminal of the semiconductor chip is composed of the conductive elastic pad 330, a ground contact area with the ground terminal is sufficiently obtained so that a frequency characteristic and heat generation problem at the time of performing a radio frequency (RF) semiconductor test can be solved.
(20) The semiconductor chip test terminal 310 is disposed in the terminal hole 311 of the film layer 310 and is formed to surround the conductive elastic pad 330 at the periphery of the conductive elastic pad 330.
(21) The fixing pin 340 functions to fix the semiconductor chip test terminal 320.
(22)
(23) As illustrated in
(24) When the semiconductor chip 300 to be tested is positioned on the socket for the semiconductor chip test which is configured as described above, the terminal of the semiconductor chip 300 is connected to the semiconductor chip test terminal 320, and the ground terminal of the semiconductor chip 300 is connected to the conductive elastic pad 330.
(25) Accordingly, thanks to the conductive elastic pad 330, a ground contact area with the ground terminal of the semiconductor chip 300 is sufficiently obtained so that a heat generation problem can be solved and test stability for a high radio frequency (RF) circuit can be improved.
(26)
(27) The configuration of the conductive elastic pad of the socket for the semiconductor chip test according to the present exemplary embodiment of the invention will be described in more detail with reference to
(28) The conductive elastic pad 330 is disposed on the film layer 310, and more specifically, in the pad combination hole 312 formed in the center portion of the film layer 310.
(29) The conductive elastic pad 330 is formed by including metal power in silicon rubber, and at this time, has the conductive area 331 formed to correspond to the ground terminal of the semiconductor chip.
(30) That is, the conductive area 331 of the conductive elastic pad 330 is configured to include metal power, thus enabling a test for the ground terminal of the semiconductor chip to be performed.
(31) Meanwhile, as illustrated in (a) or (b) of
(32) Unlike this, as illustrated in (c) of
(33) As such, the conductive area 331 may be configured in various shapes at a position corresponding to the ground terminal of the semiconductor chip.
(34) A method of manufacturing a socket for a semiconductor chip test according to another exemplary embodiment of the present invention will be hereinafter described with reference to
(35) First, the film layer is configured by laminating a plurality of films.
(36) At this time, as illustrated in
(37) For example, the film layer 310 may be configured by laminating a second film on a first film.
(38) After this, the pad combination hole 312 and the terminal hole 311 are formed in the film layer 310 which is configured as described above using a laser process or a press process. The pad combination hole 312 is formed in the center portion of the film layer 310, and the terminal hole is provided to surround the pad combination hole 312.
(39) At this time, the pad combination hole 312 and the terminal hole 311 are formed perpendicular to a width face of the film layer 310 by performing a laser process or a press process with regard to the film layer 310.
(40) Then, the conductive elastic pad 330 and the semiconductor chip test terminal 320 are disposed in the pad combination hole 312 and the terminal hole 311, respectively, which are formed as described above.
(41) The conductive elastic pad 330 is composed by including metal power in silicon rubber, and more specifically, the conductive elastic pad 330 has the conductive area 331 formed using the metal powder to correspond to the ground terminal of the semiconductor chip.
(42) At this time, as illustrated in (a) or (b) of
(43) Meanwhile, the semiconductor chip test terminal 320 is disposed in the terminal hole 311 positioned at the periphery of the conductive elastic pad 330 of the film layer 310 as illustrated in
(44) As reviewed above, according to the present invention, since the film layer is processed using laser beams, the production expenses can be greatly reduced compared to a conventional art which is required to process a high-priced engineering plastic material.
(45) Also, according to the present invention, when a portion connected to the ground terminal of the semiconductor chip is composed of the conductive elastic pad, a ground contact area with the ground terminal is sufficiently obtained so that a frequency characteristic and heat generation problem at the time of performing a radio frequency (RF) semiconductor test can be solved.
(46) As previously described, in the detailed description of the invention, having described the detailed exemplary embodiments of the invention, it should be apparent that modifications and variations can be made by persons skilled without deviating from the spirit or scope of the invention. Therefore, it is to be understood that the foregoing is illustrative of the present invention and is not to be construed as limited to the specific embodiments disclosed, and that modifications to the disclosed embodiments, as well as other embodiments, are intended to be included within the scope of the appended claims and their equivalents.