Abstract
An improved electroacoustic transducer with an improved mode profile is provided. The transducer comprises a transversal velocity profile with a periodic structure and an edge structure flanking the periodic structure. The velocity profile also allows to suppress the SH wave mode. A dielectric material with a periodic structure contributes to the formation of the periodic structure of the velocity profile.
Claims
1. An electroacoustic transducer (TD), comprising a longitudinal direction (x) and a transversal direction (y) orthogonal to the longitudinal direction (x), a transversal velocity profile (VP) of acoustic waves propagating in the transducer (TD), an acoustically active region (AAR) with interdigitating electrode fingers (EF), a periodic dielectric material (PDM) having a periodic structure in the active region along the transversal direction (y), wherein the transversal velocity profile (VP) has a periodic structure (PS) in the active region (AAR), the periodic dielectric material contributes to the formation of the shape of the periodic structure of the velocity profile, the periodic structure (PS) has a plurality of minimal values and a plurality of maximal values larger than the minimal values, the periodic structure (PS) is flanked on both sides by an edge structure (ES) of the transversal velocity profile (VP), the velocity (v) in the edge structure (ES) being lower than the maximal values of the periodic structure (PS), the piezoelectric material is LiNbO.sub.3.
2. An electroacoustic transducer (TD), comprising a longitudinal direction (x) and a transversal direction (y) orthogonal to the longitudinal direction (x), a transversal velocity profile (VP) of acoustic waves propagating in the transducer (TD), an acoustically active region (AAR) with interdigitating electrode fingers (EF), a periodic dielectric material (PDM) having a periodic structure in the active region along the transversal direction (y), wherein the transversal velocity profile (VP) has a periodic structure (PS) in the active region (AAR), the periodic dielectric material contributes to the formation of the shape of the periodic structure of the velocity profile, the periodic structure (PS) has a plurality of minimal values and a plurality of maximal values larger than the minimal values, the periodic structure (PS) is flanked on both sides by an edge structure (ES) of the transversal velocity profile (VP), the velocity (v) in the edge structure (ES) being higher than the minimal values of the periodic structure (PS), the piezoelectric material is LiTaO.sub.3.
3. An electroacoustic transducer (TD), comprising a longitudinal direction (x) and a transversal direction (y) orthogonal to the longitudinal direction (x), a transversal velocity profile (VP) of acoustic waves propagating in the transducer (TD), an acoustically active region (AAR) with interdigitating electrode fingers (EF), a periodic dielectric material (PDM) having a periodic structure in the active region along the transversal direction (y), wherein the transversal velocity profile (VP) has a periodic structure (PS) in the active region (AAR), the periodic dielectric material contributes to the formation of the shape of the periodic structure of the velocity profile, the periodic structure (PS) has a plurality of minimal values and a plurality of maximal values larger than the minimal values, the periodic structure (PS) is flanked on both sides by an edge structure (ES) of the transversal velocity profile (VP).
4. The transducer (TD) of the previous claim, where the piezoelectric material is quartz.
5. The transducer (TD) of one of the previous claims, comprising dummy fingers.
6. The transducer (TD) of one of the previous claims, where the shape of the periodic dielectric material (PDM) coincides with the periodic structure (PS) of the velocity profile (VP).
7. The transducer (TD) of one of the previous claims, where the periodic dielectric material (PDM) comprises structured material from a passivation layer, structured material from a TCF-compensation layer or an additional structured material.
8. The transducer (TD) of one of the previous claims, where the periodic dielectric material (PDM) is arranged directly on the electrode fingers (EF), in a passivation layer deposited above the electrode fingers (EF), in a TCF-compensation layer deposited above the electrode fingers (EF) or on the top side of the transducer.
9. The transducer (TD) of one of the previous claims, where the periodic dielectric material (PDM) comprises stripes arranged on the electrode fingers.
10. The transducer (TD) of one of the previous claims, where the periodic dielectric material (PDM) comprises stripes arranged above the electrode fingers (EF).
11. The transducer (TD) of one of the previous claims, where the periodic dielectric material (PDM) comprises stripes arranged between the electrode fingers or elevated over center positions between electrode fingers.
12. The transducer (TD) of one of the previous claims, where the periodic dielectric material (PDM) comprises stripes extending along the longitudinal direction (x) and having the length of the transducer.
13. The transducer (TD) of one of the previous claims, where the periodic dielectric material (PDM) has a density different from a density of dielectric material surrounding the periodic dielectric material (PDM) or a stiffness different from a stiffness of dielectric material surrounding the periodic dielectric material (PDM).
14. The transducer (TD) of one of the previous claims, where the edge structure (ES) comprises two stripes per unit cell, each of the two stripes being arranged directly next to a respective side of the periodic structure (PS).
15. The transducer (TD) of claim 13, where the stripes of the edge structure (ES) have a length 1 being larger than 50% of a periodic length of the periodic structure (PS).
16. The transducer of claim 13, where the stripes of the edge structure have a length 1 being smaller than 50% of a periodic length of the periodic structure (PS).
17. The transducer (TD) of the one of the previous claims, comprising two stripes of a gap structure (GS) where in the gap structure (GS) the velocity (v) is larger than the maximal value of the velocity (v) of the periodic structure (PS), the active region (AAR) is arranged between the two stripes of the gap structure (GS).
18. The transducer (TD) of the previous claim, where the gap structure's (GS) stripes have a length from 0.5 λ to 10 λ or from 2 λ to 4 λ.
19. The transducer (TD) of one the two previous claims, where the gap structure (GS) has a metallization ratio η from 0.2 to 0.8.
20. The transducer (TD) of one of the previous claim, comprising a piezoelectric substrate (SU), two busbars (BB) arranged on the substrate (SU) and aligned parallel to the longitudinal direction (x), interdigitated electrode fingers (EF), each arranged on the substrate (SU), connected to one of the busbars (BB), and aligned parallel to the transversal direction (y).
21. The transducer (TD) of one of the previous claims, where the transversal velocity profile (VP) is adjusted via one or more measures selected from: reduced velocity (v) by increased mass loading by increased finger (EF) width, reduced velocity (v) by increased mass loading by increased finger (EF) thickness, reduced velocity (v) by increased mass loading by additional material deposited on the electrode fingers (EF), reduced velocity (v) in the gap structure (GS) by increased mass loading by dummy patches in a gap region corresponding to the gap structure (GS), reduced velocity (v) by increased mass loading by material deposited in stripes on the electrode fingers (EF), increased velocity (v) by reduced mass loading by reduced finger (EF) width, increased velocity (v) by reduced mass loading by reduced finger (EF) thickness, increased velocity (v) by reduced mass loading by material removed from the electrode fingers (EF).
Description
BRIEF DESCRIPTION OF THE FIGURES
[0086] The transducer is explained in greater detail on the basis of exemplary and not limiting embodiments and associated figures below.
[0087] FIG. 1 shows the orientation of the longitudinal direction x with respect to the transversal direction y.
[0088] FIG. 2 shows the transversal velocity profile v along the transversal direction y.
[0089] FIG. 3 shows the orientation of the transducer with respect to the longitudinal direction x and the transversal direction y.
[0090] FIG. 4 illustrates a possible causal connection between the velocity profile and a physical realization of the transducer's electrode structure.
[0091] FIG. 5 shows the conductance of the transducer as described above compared to the conductance of conventional transducers.
[0092] FIG. 6 shows the velocity profile and the profile of the fundamental mode of the improved transducer the conductance of which is shown in FIG. 5.
[0093] FIG. 7 shows the velocity profile of the second symmetric wave mode of an embodiment of the transducer together with the mode profile and the absolute value of the mode profile.
[0094] FIG. 8 shows the velocity profile and the respective mode profile and its absolute value of the third symmetric wave mode.
[0095] FIG. 9 shows the velocity profile and the respective mode profile and its absolute value of the fourth symmetric wave mode.
[0096] FIG. 10 shows the velocity profile and the mode profile and its respective absolute value of the fifth symmetric wave mode.
[0097] FIG. 11 shows the frequency-dependent conductance of a transducer with a 2D periodic array with patches compared to the conductance of a conventional transducer.
[0098] FIG. 12 shows the velocity profile and the wave mode and its respective absolute value of the transducer having the frequency characteristic shown in FIG. 11.
[0099] FIG. 13 shows an embodiment of a transducer's electrode structure.
[0100] FIG. 14 shows another embodiment of an electrode structure having an increased finger width in a region corresponding to the gap structure.
[0101] FIG. 15 shows an embodiment of electrode structures having a reduced finger width in the region corresponding to the gap structure.
[0102] FIG. 16 shows an embodiment of electrode structures comprising dummy finger patches arranged within the region corresponding to the gap structure.
[0103] FIG. 17 shows stripes comprising a dielectric material arranged in the region corresponding to the gap structure.
[0104] FIG. 18 shows an embodiment of electrode structures comprising metal bars arranged on a dielectric material arranged on the electrode fingers and the bus bars.
[0105] FIG. 19 shows an embodiment of a transducer structure where material is removed in the active region to reduce the mass loading.
[0106] FIG. 20 shows an embodiment of a transducer structure with individual additional masses arranged on each side of the electrode fingers to increase the mass loading.
[0107] FIG. 21 shows electrode structures the material of which is partially removed to obtain the respective velocity profile.
[0108] FIG. 22 shows an embodiment of electrode structures with additional material deposited on locally etched electrode structures.
[0109] FIG. 23 shows electrode fingers with recesses.
[0110] FIG. 24 shows electrode structures with additional metal bars in the region correlated to the gap structure and with recesses in the electrode fingers establishing the periodic structure.
[0111] FIG. 25 shows stripes of a periodic dielectric material arranged on interdigitated electrode fingers and between the fingers and extending along the longitudinal direction.
[0112] FIG. 26 shows stripes of a periodic dielectric material arranged on interdigitated electrode fingers.
[0113] FIG. 27 shows a cross section of a transducer with stripes according to FIG. 25.
[0114] FIG. 28 shows a cross section of a transducer with a TCF-compensation layer and a passivation layer.
[0115] FIG. 29 shows a cross section of a transducer with a structured TCF-compensation layer.
[0116] FIG. 30 shows a cross section of a transducer with a structured TCF-compensation layer covered by a passivation layer with a flat surface.
[0117] FIG. 31 shows a cross section of a transducer with a structured TCF-compensation layer covered by a passivation layer following the structure of the TCF-compensation layer.
[0118] FIG. 32 s bows a cross section of a transducer with a TCF-compensation layer covered by a structured passivation layer.
DETAILED DESCRIPTION
[0119] FIG. 1 shows a substrate SU which may comprise piezoelectric material such as lithium niobate (LiNbO.sub.3) or lithium tantalate (LiTaO.sub.3). x denotes the longitudinal direction. y denotes the transversal direction. Interdigital transducers are arranged in such a way that the main direction of propagation is parallel to the x-direction. Accordingly, a crystal cut of the substrate SU is chosen to obtain a high coupling coefficient.
[0120] FIG. 2 illustrates the velocity profile VP of acoustic waves propagating in the substrate SU shown in FIG. 1. The velocity profile has a periodic structure PS which is flanked by edge structures ES in such a way that the periodic structure PS is arranged between the edge structures ES in the transversal direction y. The periodic structure PS comprises areas with a relative high velocity v and areas with a relative low velocity. The areas of high and low velocity alternate in such a way that a periodic velocity profile in the periodic structure is obtained. The velocity in the edge structure is lower than the maximum velocity in the periodic structure PS.
[0121] The velocity in the edge structure may be equal to the lowest velocity in the periodic structure. However, the velocity in the edge structure ES may differ from the lowest velocity in the periodic structure. Also, the length of the edge structure is not limited. However, it may be preferred that the length of the respective stripe of the edge structure ES is larger than half of the periodic length of the periodic structure PS. Here the phrase “length” denotes the extension of the edge structure in the transversal direction.
[0122] FIG. 3 shows the orientation of the transducer TD comprising bus bars BB and electrode fingers EF with respect to the longitudinal direction x and the transversal direction y. The area in which the electrode fingers of opposite electrodes overlap is called the acoustically active region AAR. The bus bars are oriented parallel to the longitudinal direction x. The electrode fingers EF are oriented parallel to the transversal direction y.
[0123] When an RF signal is applied to the bus bars and the bus bars have opposite polarities, an acoustic wave is excited in the piezoelectric substrate SU.
[0124] FIG. 4 shows the connection of the electrode structure and the velocity profile v. The velocity of acoustic waves at the surface or an interface of a piezoelectric material depends on the mass loading at the interface. A higher mass loading and/or a higher reflection decreases the velocity. However, higher elastic constants of a material deposited on the piezoelectric material increases the velocity. Thus, the shape of the velocity profile v along the transversal direction y can directly depend on geometric structures of the material arranged on the piezoelectric substrate, e.g. the electrode structures comprising the bus bars BB and the electrode fingers EF. To obtain the periodic structure of the velocity profile VP, the electrode fingers EF may have a shape with a corresponding periodic symmetry. To obtain minima in the velocity profile, the local finger width can be increased compared to sections where the velocity should be maximal and the according finger width is, thus, reduced. Further, in order to obtain the edge structure with a reduced velocity compared to the maximal velocity within the periodic structure, the finger width can be larger in the area corresponding to the edge structure compared to the area corresponding to the highest velocities in the periodic structure.
[0125] FIG. 5 shows the conductance curves of two transducers. The frequency-dependent conductance of a conventional transducer is denoted as “1” while the conductance of an improved transducer is denoted as “2”. Especially at a frequency of approximately 910 MHz, the conventional transducer offers a peak deriving from the SH mode. A resonance in the improved transducer is efficiently suppressed.
[0126] The transducer, of which the frequency-dependent conductance is shown in FIG. 5, has a velocity profile shown in FIG. 6. The velocity profile VP has a periodic structure between two structures deviating from the periodic structure, namely the edge structure ES. In the velocity profile VP shown in FIG. 6, the fundamental mode FM is formed. The combination of the periodic structure and the edge structure ES allows to efficiently suppress the SH mode while also no or nearly no transversal modes are excited.
[0127] FIG. 7 shows a velocity profile and the corresponding symmetric wave mode profile together with its absolute value. As can be seen, the amplitude of the mode profile with a positive displacement is mainly equal to the amplitude of the mode profile with a negative displacement in the periodic structure. Thus, the areas of positive and negative displacements, i.e. the value of the integral of the mode profile mainly vanishes and the excitation strength of the second symmetric mode is minimized.
[0128] FIG. 8 shows, similar to the situation shown in FIG. 7, the mode profile and its absolute value of the velocity profile already shown in FIG. 7. Again, the amplitude of positive and negative displacements are mainly equal. Thus, the excitation strength of the third symmetric mode profile is minimized.
[0129] FIG. 9 shows the mode profile of the fourth symmetric wave mode. Again, the amplitude of positive and negative displacements are mainly equal. Thus, the excitation strength of the fourth symmetric wave mode is minimized.
[0130] FIG. 10 shows the mode profile and its absolute value of the fifth symmetric wave mode. Again, the excitation strength is minimized as the shape of the velocity structure with the edge structure flanking the periodic structure is an efficient means to suppress higher order modes.
[0131] FIG. 11 shows conductance curves of a conventional transducer, curve “1” and of a transducer where the velocity in the edge structure is equal to the highest velocity in the periodic structure, curve “2”. Further, the velocity in the periodic structure or in the active region (the velocity profile is shown in FIG. 12) is very slow so that the transversal mode, of which the wavelength is equal or similar to the transversal periodicity, is bound. As a result, a plurality of resonances in the frequency-dependent conductance—as shown by curve 2—are obtained.
[0132] FIG. 12 shows the velocity profile corresponding to conductance curve 2 of FIG. 11. Since the transversal mode is bounded, the shape of the mode profile becomes cosine-like. A comparison between the mode profile shown in FIG. 12 and the absolute value of the mode profile reveals that the negative displacement has a smaller amplitude than the positive displacement. As a result, the signal is not cancelled out completely and the plurality of resonances shown in FIG. 11 are obtained.
[0133] Thus, the depth of the velocity profile should not exceed critical values. The waveguide parameters have to be chosen in such a way that the highest bounded mode has a lower number than the mode responsible for the second resonances as shown in curve 2 of FIG. 11.
[0134] The highest bounded mode—denoted as n.sub.max—that a wave guide can contain is a function of the aperture and the track and gap velocity:
n.sub.max=2 A f.sub.0sqrt[1/(v.sub.track).sup.2−1/(v.sub.gap).sup.2]
[0135] Here, A denotes the aperture. f.sub.0 denotes the resonance frequency, V.sub.track is the lowest velocity in the active region. V.sub.gap is the velocity in the gap structure. FIG. 13 shows a basic embodiment where the periodic structure of the velocity profile is obtained by an according periodic finger width variation in the electrodes.
[0136] FIG. 14 is an embodiment of a transducer where a reduced velocity in the gap structure is obtained by an increase of the finger width of the electrodes in the area corresponding to the gap structure.
[0137] FIG. 15 shows an embodiment of a transducer structure where the velocity in the gap structure is increased by a reduced finger width in the corresponding section of the electrodes.
[0138] FIG. 16 shows an embodiment where mass loading is increased to reduce the velocity in the gap structure by additional dummy fingers arranged in such a way that the distance between the bus bar and an electrode finger is reduced to a minimum.
[0139] FIG. 17 shows an embodiment of a transducer where a dielectric material, e.g. comprising a silicon dioxide, is arranged in two stripes in the gap structure corresponding region.
[0140] FIG. 18 shows an embodiment of a transducer where the electrode fingers are covered with a dielectric material, e.g. silicon dioxide as a TCF-compensation layer. The left part of FIG. 18 shows a top view onto the transducer where two stripes of metal increase the mass loading to reduce the velocity in the gap structure corresponding region. The right part of FIG. 18 shows a cross-section through the transducer showing that the dielectric material is arranged between the metal stripes and the electrodes.
[0141] As a dielectric material DS is arranged between the electrode fingers EF and the stripes for increased mass loading MS, the stripes MS can comprise a metal. This is in contrast to FIG. 17 where the stripes are directly arranged on the electrode fingers. Thus, an insulating material is preferred in the embodiment shown in FIG. 17.
[0142] FIG. 19 shows on the left-hand side a top view onto a transducer structure and the thickness of the respective metallization of the electrode fingers along the transversal direction (right-hand side). In the active region, the thickness of the metallization is reduced. In the region corresponding to the gap structure, the thickness is larger than in the active region. Thus, a velocity profile in which the velocity in the gap structure is reduced compared to the periodic structure is obtained.
[0143] FIG. 20 shows an embodiment of a transducer where the transducer structure is covered with a dielectric material DM. In order to increase the mass loading, individual segments of a material with a high density, e.g. a metal, are arranged on the respective electrode fingers of the edge structure. As the additional material is arranged directly on the electrode material and not isolated from the electrodes via the dielectric material DM, the segments of the additional material should not be in direct contact with each other.
[0144] FIG. 21 shows an important aspect in forming the velocity profile shown in the upper right part of FIG. 21: The lower part of FIG. 21 shows that the height of the metallization establishing the electrode fingers can be varied along the transversal direction to adjust the velocity profile. A periodic profile can be etched into the electrode finger to obtain the periodic structure PS. The thicknesses in the regions corresponding to the edge structures and the gap structures can be adjusted accordingly.
[0145] FIG. 22 shows a further embodiment of the transducer shown in FIG. 21 where further to the etching to obtain different thicknesses in the electrode structure, a dielectric, e.g. a silicon dioxide, is arranged on the electrode structures. Further, another material is deposited in stripes in the gap regions to adjust the velocity profile.
[0146] FIG. 23 shows an embodiment where recesses are structured into the electrode fingers to provide a physical basis for the periodic structure of the velocity profile.
[0147] FIG. 24 shows further to the recesses of FIG. 23 in the electrode fingers material bars, e.g. metal bars, in the areas corresponding to the gap structure as a physical realization of the velocity setting.
[0148] FIG. 25 shows a possible arrangement of periodic stripes consisting of the periodic dielectric material PDM. The right portion of FIG. 25 illustrates the effect of the dielectric material PDM on the transversal velocity profile. At segments of the electrode fingers EF with the material PDM and at segments between the fingers the mass loading is increased and the velocity is accordingly reduced.
[0149] FIG. 26 shows a possible arrangement of periodic stripes consisting of the periodic dielectric material PDM. Again, the right portion of FIG. 26 illustrates the effect of the dielectric material PDM on the transversal velocity profile. At segments of the electrode fingers EF with the material PDM the mass loading is increased and the velocity is accordingly reduced. The area between the fingers is free from the periodic dielectric material.
[0150] FIG. 27 shows a cross section of the transducer of FIG. 25. The mass loading is obtained by arranging the stripes of the dielectric material PDM having a higher density than its surrounding, in particular the material deposited on the electrode fingers which may be a material of a TCF-compensation layer TCF compensating different temperature coefficients or of a passivation layer PL.
[0151] FIG. 28 shows a cross section of a transducer with a TCF-compensation layer and a passivation layer on the TCF-compensation layer.
[0152] FIG. 29 shows a cross section of a transducer with a structured TCF-compensation layer. A periodic transversal pattern is structured into the compensation layer to support the formation of the velocity profile's periodic shape.
[0153] FIG. 30 shows a cross section of a transducer with a structured TCF-compensation layer covered by a passivation layer with a flat surface. Although the transducer does not reveal a periodic transversal pattern at its surface, the periodic pattern structured in the TCF-compensation layer TCF and—as a negative pattern—at the bottom side of the passivation layer PL helps forming the velocity profile VP if the material of the TCF-compensation layer and of the passivation layer have different stiffness or density values.
[0154] FIG. 31 shows a cross section of a transducer with a structured TCF-compensation layer TCF covered by a passivation layer PL. The passivation layer PL mainly has a constant thickness. Thus, its surface follows the structure of the TCF-compensation layer.
[0155] FIG. 32 shows a cross section of a transducer with a TCF-compensation layer covered by a structured passivation layer comprising the periodic pattern needed to support the formation of the velocity profile.
LIST OF REFERENCE SYMBOLS
[0156] 1, 2: frequency-dependent conductance of a transducer
[0157] AAR: acoustically active region
[0158] BB: bus bar
[0159] DM: dielectric material
[0160] DS: dielectric stripe
[0161] EF: electrode finger
[0162] ES: edge structure
[0163] FM: frequency modulation
[0164] G: gap
[0165] GS: gap structure
[0166] MS: metallic stripe
[0167] PDM: periodic dielectric material
[0168] PL: passivation layer
[0169] PS: periodic structure
[0170] SU: substrate
[0171] TCF: TCF compensation layer
[0172] TD: transducer
[0173] v: velocity
[0174] VP: velocity profile
[0175] x: longitudinal direction
[0176] y: transversal direction
