METHOD FOR MANUFACTURING NANOSTRUCTURES

Abstract

There is provided a method for manufacturing a plurality of nanostructures comprising the steps of providing a plurality of spherical Zn structures and oxidizing the spherical structures in ambient atmosphere at a temperature in the range of 350° C. to 600° C. for a time period in the range of h to 172 h, such that ZnO nanowires protruding from the spherical structures are formed. There is also provided a field emission arrangement comprising a cathode having the aforementioned ZnO nanowire structures arranged thereon.

Claims

1. A method for manufacturing a plurality of nanostructures comprising the steps of: providing a plurality of Zn structures; and oxidizing said structures in ambient atmosphere at a temperature in the range of 350° C. to 550° C. for a time period in the range of 36 h to 72 h, such that ZnO nanowires protruding from said structures are formed.

2. The method according to claim 1, wherein said plurality of Zn structures are essentially spherical.

3. The method according to claim 1, wherein said Zn structures are provided on the surface of a substrate.

4. The method according to claim 1, wherein a diameter of said Zn structures is in the range of 1-100 μm.

5. The method according to claim 1, wherein said ZnO nanowires are grown to a length in the range of 3-7 μm.

6. The method according to claim 1, wherein said ZnO nanowires are grown to have a tip radius in the range of 10-30 nm.

7. The method according to claim 1, wherein said Zn structures are provided in the form of a Zn powder being sprayed on said substrate.

8. (canceled)

9. A structure comprising; a Zn structure having a diameter in the range of 1-100 μm; a plurality of ZnO nanowires extending from said Zn structure, said nanowires having a length in the range of 3-7 μm, and a tip radius in the range of 10-30 nm, wherein said structures are formed by oxidation in ambient atmosphere at a temperature in the range of 350° C. to 550° C. for a time period in the range of 36 h to 72 h.

10. The structure according to claim 9, wherein said plurality of Zn structures are essentially spherical.

11. The structure according to claim 9, wherein said Zn structure has a hollow core.

12. The structure according to claim 9, wherein said Zn structure comprises a ZnO shell.

13. The structure according to claim 9, wherein said ZnO nanowire is tapered.

14. The structure according to claim 9, wherein said nanowires have a uniform length distribution.

15. A cathode configured to be used in a field emission lighting arrangement, said cathode comprising: a substrate comprising a plurality of structures according to claim 9.

16. A cathode configured to be used in a field emission lighting arrangement, said cathode comprising: a wire comprising a plurality of structures according to claim 9.

17. A field emission arrangement comprising: an anode structure at least partly covered by a phosphor layer, said anode structure being configured to receive electrons emitted by a field emission cathode according to claim 15; an evacuated chamber in which said anode structure and field emission cathode is arranged; and a power supply connected to the anode and the field emission cathode configured to apply a voltage so that an electron is emitted from the cathode to the anode.

17. A field emission arrangement comprising: an anode structure at least partly covered by a phosphor layer, said anode structure being configured to receive electrons emitted by a field emission cathode according to claim 16; an evacuated chamber in which said anode structure and field emission cathode is arranged; and a power supply connected to the anode and the field emission cathode configured to apply a voltage so that an electron is emitted from the cathode to the anode.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0021] These and other aspects of the present invention will now be described in more detail with reference to the appended drawings showing an example embodiment of the invention, wherein:

[0022] FIG. 1 is a flow chart outlining the general process steps of a method for manufacturing a nanostructure according to an embodiment of the invention;

[0023] FIGS. 2a-c schematically illustrates the manufacturing process according to an embodiments of the invention;

[0024] FIG. 3a-c illustrates nanostructures according to various embodiments of the invention; FIG. 4a-h illustrates nanostructures according to various embodiments of the invention;

[0025] FIG. 5 schematically illustrates a cathode structure according to an embodiment of the invention; and

[0026] FIG. 6 schematically illustrates a field emission arrangement according to an embodiment of the invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION

[0027] In the present detailed description, various embodiments of a method for fabricating nanostructures according to the present invention are mainly discussed with reference to ZnO nanostructures suitable for use as field emitters. It should be noted that this by no means limits the scope of the present invention which is equally applicable to nanostructures comprising other materials. Like reference characters refer to like elements throughout.

[0028] A method according to various embodiments of the present invention will now be described with reference to the flow-chart shown in FIG. 1 outlining the general method steps for fabrication of nanostructures and to FIGS. 2a-c schematically outlining the fabrication process.

[0029] In a first step 102, a substrate 202 is provided. The substrate 202 may for example be a conventional semiconductor substrate such as a silicon substrate. However, the substrate 202 may equally well be made from materials such as SiO.sub.2, quartz, Al.sub.2O.sub.3, metallic substrates such as (but not limited to) stainless steel etc.

[0030] Next, spherical Zn particles 204 are provided on the substrate. The particles typically have a diameter from a few micrometers up to several tens of micrometers, with an average particle size of approximately 6-9 micrometers. Moreover, the particles may for example be provided to the surface of the substrate by means of pressurized air blowing a Zn powder onto the surface. The Zn powder may for example be any commercially available Zn powder having a purity of preferably at least 97%. As illustrated in FIG. 2a, an air gun 206 may be used to deposit the Zn particles. Once the plurality of particles is deposited on the surface of the substrate 202 in a desired concentration, the substrate 202 with the layer of Zn particles is inserted into an oxidation furnace for thermal oxidation.

[0031] In step 106, the Zn particles are oxidized in ambient air at a temperature of 450° C. for a time period of about 72 h such that ZnO nanowires 210 are grown radially from the Zn core particles as shown in FIG. 2c. The population density and aspect ratio of the ZnO nanowires can be controlled by controlling the oxidation temperature and oxidation time, and other times and temperatures within the claimed ranges are thus feasible. In particular, similar results have been found for an oxidation time of 36 h at a temperature of 550° C. Accordingly, an increase in temperature also increases the oxidation rate. An increased oxidation rate may be preferable for ZnO nanowire growth in the [100] direction, as observed through TEM and XRD analysis. Observed population densities have increased from below 10 nanowires/μm2 at an oxidation temperature of 350° C. to approximately 13 nanowires/μm2 at an oxidation temperature of 550° C., an increase in population density of more than 30%. The oxidation of the Zn core particle also leas to a volume expansion of the core particle as oxidation cases oxygen to interdiffused with the Zn core.

[0032] FIG. 2c schematically illustrates an oxidized Zn particle 208 having nanowires 210 extending substantially perpendicularly from the particle.

[0033] FIG. 3a illustrates a Zn particle having ZnO nanowires grown thereon. The nanowire length is typically on the same order as the diameter of the Zn particle. In particular, the length of the illustrated nanowires is in the range of 3-7 micrometers as can be seen in FIG. 3b.

[0034] FIG. 3c illustrates an individual ZnO nanowire grown from a Zn particle. Here it can be seen that the nanowire tip has a radius of about 20 nanometers. The sharp tip of the nanowire makes it particularly useful in field emission applications as electron emission properties depends on the aspect ratio of the nanowire and on the sharpness of the tip of the electron emitter, i.e. the ZnO nanowire. It has also been observed that the tip diameter can be controlled by controlling the oxidation temperature, where a higher oxidation temperature provides nanowires with tips having a smaller radius, where tips of nanowires grown at 550° C. exhibit an average tip radius of about 18 nm. At the same time, the aspect ratio (length/diameter) of the nanowires is increased with an increasing oxidation temperature.

[0035] FIGS. 4a-h illustrate the Zn structure at different stages of the manufacturing process, where FIGS. 4b, d, f and h illustrate cross sections of the core particle where the particle has been sectioned by focused ion beam milling. FIG. 4a illustrates a Zn particle prior to oxidation, having a diameter of approximately 5 μm, to be used as a starting material. As can be seen in FIG. 4b, the Zn core particle is entirely solid.

[0036] FIG. 4c illustrates the Zn particle after thermal oxidation at 450° C. for 6 h, and the cross section of FIG. 4d shows that the particle is still solid.

[0037] FIG. 4e illustrates that, when increasing the oxidation time to 24 hours, the length and population density of the ZnO nanowires were increased on the core particle. Furthermore, a hollow core was created as shown in FIG. 4f. FIGS. 4g and 4h show the surface and inner structure of the urchin-like microsphere, respectively, after an oxidation time of 72 hours.

[0038] EDS analysis of the resulting particle illustrated in FIG. 4g show that no oxygen was found near the edge of the hollow core while zinc was present in the whole sphere. It can therefore be concluded that a zinc layer exists around the hollow core as an inner shell and a zinc oxide layer is an outer shell, as a result of the oxidation of the surface of the structure.

[0039] The current density from a field emitting device comprising the above described nanostructures has been formed, and tests have shown that nanostructures oxidized at a higher temperature results in a higher current density as a function of applied field. Moreover, the current density is shown to exhibit a Fowler-Nordheim behavior indicating that Fowler-Nordheim tunneling is the primary mechanism responsible for electron emission.

[0040] FIG. 5 schematically illustrates a cathode structure 500 comprising a wire 502 comprising a plurality of structures 208 according to any one of the aforementioned embodiments.

[0041] FIG. 6 further illustrate a field emission arrangement 600 comprising an anode structure 602 at least partly covered by a phosphor layer 604. The anode structure is configured to receive electrons emitted by the field emission cathode 500. The field emission arrangement 600 further comprises an evacuated chamber 601 in which the anode structure 602 and field emission cathode 500 is arranged. A power supply 606 is connected to the anode 602 and to the field emission cathode 500, configured to apply a voltage so that an electron is emitted from the cathode 500 to the anode 602, thereby exciting the phosphor layer such that photons are emitted. The power supply further comprises connectors 608 for connecting the field emission arrangement 600 to an external power source.

[0042] Moreover, the manufacturing process described herein may be complemented by additional steps aiming to form a cathode structure for a field emission arrangement. For example, a pattern of Zn particles comprising ZnO nanowires may be formed. The pattern may be formed either before or after oxidation of the Zn particles, and conventional methods such as photolithography may be used to form a desired pattern of ZnO nanowire structures.

[0043] Additionally, a metal pattern may be formed on the substrate prior to deposition of the ZnO particles to form a conductive grid or array, or to form individually addressable sites where ZnO structures are formed.

[0044] The Zn particles may also be deposited and subsequently oxidized on other structures than a planar substrate. Other structures suitable for use as a cathode in a field emission arrangement may for example comprise conductive wires and the like. In particular, the described manufacturing method allows for formation of ZnO nanowires on structures haven any shape or form, since the deposition of Zn particles and oxidation is not limited by process steps requiring a planar surface to perform.

[0045] The person skilled in the art realizes that the present invention by no means is limited to the preferred embodiments described above. On the contrary, many modifications and variations are possible within the scope of the appended claims.

[0046] Additionally, variations to the disclosed embodiments can be understood and effected by the skilled person in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims. In the claims, the word “comprising” does not exclude other elements or steps, and the indefinite article “a” or “an” does not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measured cannot be used to advantage.