APPARATUS AND METHOD FOR HIGH-PERFORMANCE CHARGED PARTICLE DETECTION
20230170205 · 2023-06-01
Inventors
- Hung Quang Hoang (Esch-sur-Alzette, LU)
- Tom Wirtz (Esch-sur-Alzette, LU)
- Rathaiah Pureti (Esch-sur-Alzette, LU)
- Olivier Bouton (Esch-sur-Alzette, LU)
Cpc classification
H01J49/025
ELECTRICITY
H01J49/0031
ELECTRICITY
H01J49/421
ELECTRICITY
International classification
Abstract
A detection apparatus and method for detecting charged particles. The device relies on a detection assembly comprising microchannel plates. The useful surface of the microchannel plate device is maximized in time through the use of beam deflection means upstream of the detection front.
Claims
1. A detection apparatus for detecting charged particles, the detection apparatus comprising: a charged particle beam inlet; a detection front comprising an entry face of at least one microchannel plate (MCP) assembly, wherein the entry face extends along a first direction, wherein the MCP assembly is configured for receiving, along a second direction perpendicular to said first direction, a plurality of beams of charged particles that impinge on the entry face and for generating, for each impinging charged particle, a corresponding amplified detection signal on an opposite exit face; at least one read-out anode for collecting said amplified detection signals, the anode being arranged at a distance to, and in parallel with the exit face of said at least one MCP assembly, a beam deflection means arranged downstream of said charged particle beam inlet at a distance from said entry face and configured for selectively deflecting incoming beams of the charged particles along said first direction, so that the corresponding charged particles selectively reach different portions of the entry face of the at least one MCP assembly along said first direction; wherein the charged particle beam inlet, the beam deflection means, the detection front, and the at least one read-out anode extend along said second direction.
2. The apparatus according to claim 1, wherein said beam deflection means comprise a charged particle optics unit and a control unit, the control unit being configured to dynamically control a deflection angle to be applied to a propagation direction of the charged particle beam by the charged particle optics unit.
3. The apparatus according to claim 2, wherein said charged particle optics unit comprises a pair of deflection plates.
4. The apparatus according to claim 1, wherein said beam deflection means comprise a charged particle optics unit and a control unit, the control unit being configured to dynamically control an opening angle within which a propagation direction of the charged particle beam is deflected by the charged particle optics unit.
5. The apparatus according to claim 4, wherein said charged particle optics unit comprises a Bradbury Nielsen Grid.
6. The apparatus according to claim 1, wherein the entry face of said at least one MCP assembly extends over 2 to 3 cm along said first direction
7. The apparatus according to claim 1, wherein the at least one MCP assembly includes a plurality of MOP assemblies that include a plurality of entry faces, wherein the entry faces of the plurality of MCP assemblies extend over an aggregated length of at least 15 cm in said second direction.
8. The apparatus according to claim 7, further comprising one dedicated read-out anode for each of the MCP assemblies, and wherein said read-out anode extends along the corresponding exit face of the MCP assembly.
9. The apparatus according to claim 1, wherein the at least one read-out anode includes at least one of a delay-line anode, a pixelated anode array, a resistive anode, a shaped anode, and a single anode.
10. The apparatus according to claim 1, further comprising biasing means configured for applying a positive or negative floating electric potential to components of the apparatus, including the beam deflection means.
11. The apparatus according to claim 1, wherein said charged particles comprise ions.
12. The apparatus according to claim 1, wherein said charged particles comprise electrons.
13. A mass spectrometer for dispersing ions along a focal plane in accordance with their mass/charge ratio, the spectrometer comprising the detection apparatus of claim 1, the detection front of the detection apparatus being arranged on said focal plane so that said dispersed ions impinge on the detection front, wherein said first direction is perpendicular to the plane in which the ions are dispersed.
14. The mass spectrometer in accordance with claim 13, wherein the deflection means of said detection apparatus are arranged so as to deflect all dispersed ions exiting a mass filtering unit of the mass spectrometer.
15. The mass spectrometer in accordance with claim 13, wherein the detection front of said detection apparatus spans said focal plane so that any ions dispersed by a mass filtering unit of the mass spectrometer impinge there upon.
16. The mass spectrometer according to claim 14, wherein the mass spectrometer is a Mattauch-Herzog type device.
17. A method for detecting charged particles, using the apparatus of claim 1, the method comprising the following steps: i) providing the plurality of charged particle beams; ii) using the beam deflection means of the device, deflecting said charged particle beams in accordance with a predetermined deflection angle along said first direction in which the at least one MCP assembly extends; iii) using the at least one read-out anode of the device, reading out the amplified detection signals, as provided by said at least one MCP assembly; and iv) repeating steps ii) and iii) at least once using a different predetermined deflection angle.
18. A method of using the mass spectrometer in accordance with claim 13, the method comprising the following steps: a) dispersing ion species comprised in a secondary ion beam using a mass filtering unit of said spectrometer device, thereby generating a plurality of ion beams; b) using the beam deflection means of the spectrometer deflecting said plurality of ion beams in accordance with a predetermined deflection angle along said first direction in which the at least one MCP assembly extends; c) using the at least one read-out anode of the spectrometer, reading out the amplified detection signal, as provided by said at least one MCP assembly; and d) repeating steps b) and c) at least once using a different predetermined deflection angle.
19. The method according to claim 18, wherein steps b) and c) are repeated so as to scan the charged particle beam over the extent of the entry face of said at least one MCP assembly along said first direction.
20. The method according to claim 18, wherein the beam deflection means comprise a charged particle optics unit and a control unit, the control unit being configured to dynamically control a deflection angle to be applied to a propagation direction of the charged particle beam by the charged particle optics unit, and wherein between two successive iterations of step b), the deflection angle is altered so that the spot generated during a first iteration by a deflected beam on the entry face of said at least one MCP assembly does not overlap with the spot generated during a second iteration by the same deflected beam.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0064] Several embodiments of the present invention are illustrated by way of figures, which do not limit the scope of the invention, wherein:
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DETAILED DESCRIPTION OF THE INVENTION
[0071] This section describes features of the invention in further detail based on preferred embodiments and on the figures, without limiting the invention to the described embodiments. Unless otherwise stated, features described in the context of a specific embodiment may be combined with additional features of other described embodiments. Throughout the description, similar reference numerals will be used for similar or the same concept across different embodiments of the invention. For example, references 100, 200, 300, 400 and 500 each describe a detection apparatus in accordance with the invention, but in two respective embodiments thereof.
[0072] The description puts focus on those aspects of the proposed detector apparatus that are relevant for understanding the invention. It will be clear to the skilled person that the device also comprises other commonly known aspects, such as for example an appropriately dimensioned power supply, or a mechanical holder frame for holding the various elements of the apparatus in their respectively required positions, even if those aspects are not explicitly mentioned.
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[0074] If the ion beam 10, 10′, 10″ is scanned along the Z-direction (see the dotted and dashed lines in
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[0077] If the detection front is composed of a plurality of MCP assemblies along the X axis, all MCP assemblies may preferably have substantially the same channel size and amplification gain characteristics. Further, all MCP assemblies may have the same width extending perpendicularly to said principal direction, i.e. along the Z axis. The apparatus further comprises non-illustrated biasing means configured for applying an electric potential difference between the respective entry and exit faces of each MCP assembly. The biasing means may for example comprise a source of electricity. In accordance with a preferred embodiment of the invention, the biasing means are configured for applying a positive or negative floating electric potential to the detector's front face, and for applying a common electric potential to the respective exit faces of all MCP assemblies.
[0078] In accordance with a preferred embodiment of the invention, the deflection means of the proposed detection apparatus are provided by a device comprising deflection plates, as illustrated in
[0079] The two plates 332 in an ion beam deflector extend in parallel and define a passageway or gap for the charged particle beam 10 in between themselves. The deflector plates 332 are biased to opposite polarities to deflect the ion beams in a direction that is perpendicular to the plane in which the deflector plates extend. To this end, a source of electricity, voltage biasing unit or control unit 340 is used. The dimensions, relative arrangement and biasing electric potentials of the deflector 332, 334 are in practice optimised, for example through numerical simulation, to best match a given target application. By way of non-limiting example, the deflection plate width along the Y direction is preferably in the range from 2 mm to 8 mm. The distance between the plates 332 along the Z direction is preferably in the range from 3 mm to 5 mm. The gap between the plates 332 and the outer electrodes 334 (on both sides of the deflector to confine the fringe field regions to smaller distances) is in the range from 1 mm to 4 mm. Preferably, the distance between the plates is of about 4 mm, the gap between the plates and the outer electrodes is of about 2 mm, while the width of the plates along the Y direction is of about 6 mm. The distance between the outer electrodes, defining the inlet 302 of the apparatus, if preferably of about 6 mm. Preferably, the deflection plates 332 and outer electrodes 334 extend along the X axis, which is perpendicular to both Y and Z axes, by about 100 mm to 150 mm, and preferably by about 130 mm. Generally, the deflection length of the ion beams along the Z axis, i.e. the maximum span than can be scanned on the MCP assembly's entry face, increases with increasing deflection plate width. The mass resolution and transmission values decrease with increasing transmission plate width. The target of the deflection of 20 mm can be achievable for various combinations of the geometric and voltage values with the constraints of the mass resolution (at least up to half of the mass resolution observed at 0 V) and transmission (70%).
[0080] The working principle of the charged particle deflector 300 is as follows: the deflection distance along the Z axis, D, depends on the distance d between the deflection plates 332, their length L and the electrical potential difference (ΔV) that is applied to the pair of plates (±V). When an ion enters with an energy of eV.sub.0 into the electric field created between the two plates, (E=−ΔV/d) it will be deflected with a deflection angle θ.
[0081] Each MCP channel of an MCP assembly, whether of a single MCP, Chevron or Z-stack assembly, is characterized by recovery time, during which the channel cannot amplify a newly impinging charged particle. After a given response time, a saturated channel becomes once operational again. In accordance with a preferred embodiment, a control unit of the deflection means is therefore synchronized with the response time of the MCP assembly's micro-channels. The control unit effectively aims at steering the charged particle beam at all times, through deflection as previously described, to areas of the detection front that comprise operational MCP channels at the time of deflection. The speed of a continuously and linearly evolving scanning pattern is therefore preferably synchronized with the response time of the MCP channels, so that the charged particle beam illuminates the same channel only once it has completely recharged from the depletion caused by its previous illumination.
[0082] In an alternate embodiment, the control unit uses a sawtooth signal to scan multiple charged particle beams that are initially scattered along the X direction, periodically along the Z direction of the MCP assembly's detection front. A low-power high voltage operational amplifier scans the voltage of the ion deflection plates with a scan rate in the range from 1 Hz to 10 kHz. The scanning signal (sawtooth signal) consists of a combination of multiple scans of step voltages. The number of voltage steps depends on the size of the ion beams and the required deflection length of the ion beams in the vertical axis (Z) of the detector. A higher signal rate (>1 kHz) is desirable to achieve an enhanced signal count rate of the detector. The scanning rate is established in practice as a function of the recuperation time of a saturated channel of the MCP assembly When a measurement starts, the control unit sends a scanning signal to the high-voltage amplifier, and synchronously starts/triggers a Time-to-digital converter, TDC. Each time the step voltage changes, a pulse will pass to the TDC on a second line to increase an internal counter. During the acquisition, data is collected from the TDC. The raw data has acquired by the read-out anode and TDC has a format of {x position, y position, number of the voltage step, and iteration of the scan}. After multiple scans, there may be an integration time on each mass spectrum at different step voltages to combine all the mass spectra.
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[0084] The deflection means 430 of the proposed detection apparatus comprise a Bradbury-Nielsen Gate, BNG, device. A BNG device consists of two interleaved sets of wires or strips 433, 434 extending along the Y direction, which are equally spaced and are biased at opposite polarities so that the deflecting field region is limited to short distances, typically twice of the diameter of the wires or length of the strips. The strip width is for example in the range from 0 to 1.6 mm, each strip having a thickness of 50-100 μm. The distance between the strips is in the range from 0.4 mm to 1 mm. By way of example, for a charged particle beam comprising ions at 3 keV, the voltage on the strips may be ramped from 0V up to ±800 V by a corresponding non-illustrated control unit of the deflection means. The deflection length of the ion beams increases with increasing strip width. The transmission values decrease with increasing strip width. Depending on the applied voltages, the BNG scatters charged particle beams within an angle having a voltage-dependent opening along the Z direction.
[0085] In all presented embodiments, the detector device is able to be floated to a high voltage of up to 10 kV, while the floating potential may have either positive or negative polarity. The floating potential may preferably be applied to all components of the detection apparatus, including the beam deflection means.
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[0087] The N voltage/deflection steps are predetermined so that the correspondingly deflected spots generated by the deflected beam on the MCP entry faces span most of the entry face along the Z direction. Further, the response time of the MCP channels is taken into account: a given voltage step is applied during a time that corresponds at most to the time during which the MCP channels are capable of detection charged particles, until they saturate. Then the next voltage step is applied, wherein the difference between two steps is such that the deflected beam next illuminates a different set of micro-channels, which that are not in saturated mode. These measures maximize the availability of MCP channels for accurately counting detection events, thereby increasing the count rate of the apparatus. The corresponding calibration data depends on the type of MCP assembly that is used, on the dimensions of the apparatus, and on other factors. These data are provided on assembly of the apparatus and made available in a memory element to which the control unit 540 has read access.
[0088] At each of the N deflection steps, a corresponding detection signal is recorded using the read-out anode. Mass spectrum data for all m/z ratios is therefore recorded at each deflection step. The data corresponding to all steps is then combined, for example by adding up the successively read-out ion detection counts, to generate a full mass spectrum.
[0089] It should be understood that the detailed description of specific preferred embodiments is given by way of illustration only, since various changes and modifications within the scope of the invention will be apparent to the skilled person. The scope of protection is defined by the following set of claims.