WIDE BEAM ANTENNA STRUCTURE

Abstract

A wide beam antenna structure includes a first substrate; a second substrate disposed on a lower surface of the first substrate; a microstrip antenna layer disposed on an upper surface of the first substrate and including a plurality of microstrip antennas connected in a strip shape arrangement; a plurality of parasitic elements disposed symmetrically on two sides of the micro strip antennas with an interval therebetween, wherein the length of the parasitic element is smaller than the length of the microstrip antenna; a grounding layer disposed between the first substrate and the second substrate; and a feed line layer disposed on a lower surface of the second substrate. By use of the parasitic element to improve the half power beamwidth, the vision scope of the vehicle radar system or short distance communication operation is increased.

Claims

1. A wide beam antenna structure, comprising: a first substrate provided with an upper surface and a lower surface; a second substrate disposed on the lower surface of the first substrate and provided with an upper surface and a lower surface; a microstrip antenna layer disposed on the upper surface of the first substrate and including a plurality of microstrip antennas connected in a strip shape arrangement; a plurality of parasitic elements disposed symmetrically on two sides of the microstrip antennas with an interval between each parasitic element and the corresponding microstrip antenna, wherein a length of the parasitic element is smaller than a length of the microstrip antenna; a grounding layer disposed on the upper surface of the second substrate and positioned between the first substrate and the second substrate; and a feed line layer disposed on the lower surface of the second substrate.

2. The antenna structure of claim 1, wherein a conductive pillar set is disposed on the microstrip antenna and penetrates the first substrate and the second substrate, so as to electrically connect the feed line layer and the microstrip antenna layer.

3. The antenna structure of claim 2, wherein the conductive pillar set includes a first pillar and a second pillar, wherein a size of the first pillar is different from a size of the second pillar.

4. The antenna structure of claim 1, wherein a width of the parasitic element ranges from 0.2 to 0.6 mm.

5. The antenna structure of claim 1, wherein a length of the parasitic element ranges from 0.7 to 1.2 mm.

6. The antenna structure of claim 1, wherein the interval between the parasitic element and the corresponding microstrip antenna ranges from 0.5 to 2 mm.

7. The antenna structure of claim 1, further comprising a plurality of open grooves disposed between the parasitic element and the corresponding microstrip antenna, respectively.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0012] FIG. 1 is a partially sectional view of the wide beam antenna structure in accordance with an embodiment of the present invention.

[0013] FIG. 2 is a partial top view of the wide beam antenna structure.

[0014] FIG. 3 is a diagram illustrating the relationship between the interval, which exists between the parasitic element and the microstrip antenna, and the antenna gain of the wide beam antenna structure.

[0015] FIG. 4 is a simulation diagram of the antenna radiation pattern of the wide beam antenna structure.

[0016] FIG. 5 is a diagram illustrating the relationship between the length of the parasitic element and the antenna gain of the wide beam antenna structure in accordance with another embodiment of the present invention.

[0017] FIG. 6 is a diagram illustrating the relationship between the width of the parasitic element and the antenna gain of the wide beam antenna structure in accordance with another embodiment of the present invention.

[0018] FIG. 7 is a simulation diagram of the antenna radiation pattern of the wide beam antenna structure embodiment of FIG. 6.

[0019] FIG. 8 is a simulation diagram of the reflection coefficients of the wide beam antenna structure provided with the parasitic element in accordance with another embodiment of the present invention.

[0020] FIG. 9(a) to FIG. 9(e) are diagrams illustrating the pattern of the embodiment of FIG. 8 at a frequency of 77 GHz, 78 GHz, 79 GHz, 80 GHz, and 81 GHz, respectively.

[0021] FIG. 10 is a schematic view illustrating the wide beam antenna structure in accordance with another embodiment of the present invention.

[0022] FIG. 11(a) to FIG. 11 (e) are diagrams illustrating the pattern of the embodiment of FIG. 10 at a frequency of 77 GHz, 78 GHz, 79 GHz, 80 GHz, and 81 GHz, respectively.

DETAILED DESCRIPTION OF THE INVENTION

[0023] The aforementioned and further advantages and features of the present invention will be understood by reference to the description of the preferred embodiment in conjunction with the accompanying drawings where the components are illustrated based on a proportion for explanation but not subject to the actual component proportion. For the briefness of the drawings, unrelated details are not shown. Embodiments of the present invention are illustrated in detail along with the drawings. However, the technical features included by the present invention are not limited to certain embodiments hereby provided. Scope of the present invention shall be referred to the claims, which include all the possible replacements, modifications, and equivalent features. Certain details of technical features are allowed to be omitted. Also, certain common steps or elements are not included in the specification for avoiding unnecessary limitations. Further, identical or similar components in the drawings are marked with identical or similar numeric.

[0024] FIG. 1 and FIG. 2 are a partially sectional view and a partial top view illustrating a wide beam antenna structure 1 in accordance with an embodiment of the present invention. As shown by FIG. 1 and FIG. 2, the wide beam antenna structure 1 comprises a first substrate 10, a second substrate 11, a microstrip antenna layer 12, a plurality of parasitic elements 13, a grounding layer 14, and a feed line layer 15. The microstrip antenna layer 12 is disposed on an upper surface 101 of the first substrate 10 and provided with a plurality of micro strip antennas 121 that are connected in a strip shape arrangement. As shown by FIG. 2, the microstrip antennas 121 are connected in a strip shape array arrangement. The parasitic elements 13 are disposed symmetrically on, but not limited to, two sides of the microstrip antennas 121, with an interval D.sub.1 between each parasitic element 13 and the corresponding microstrip antenna 121. The length L.sub.1 of the parasitic element 13 is smaller than the length L of the microstrip antenna 121. The grounding layer 14 is disposed on an upper surface 111 of the second substrate 11 and positioned between the first substrate 10 and the second substrate 11. As shown by FIG. 1, the feed line layer 15 is disposed on a lower surface 112 of the second substrate 11 for feeding a wireless signal to the antenna structure 1. In an embodiment, a conductive pillar set 16 is disposed on the microstrip antennas 121, wherein the conductive pillar set 16 penetrates the first substrate 10 and the second substrate 11 for electrically connecting the feed line layer 15 and the microstrip antenna layer 12. In a preferred embodiment, the conductive pillar set 16 includes a first pillar 161 and a second pillar 162 that are disposed with an interval therebetween, wherein the size of the first pillar 161 is different from the size of the second pillar 162. In the embodiment, the size thereof refers to the radius of the pillars. Further, the grounding layer 14 is provided with through holes 141a and 141b whose diameter is larger than the outer diameter of the first pillar 161 and the second pillar 162, such that the first pillar 161 and the second pillar 162 are allowed to pass through the through holes 141a, 141b. Alternately, the through holes 141a, 141b are able to be provided with insulating material, so as to prevent the first pillar 161 and the second pillar 162 from communicating with the grounding layer 14.

[0025] In an embodiment of the present invention, an interval D.sub.1 between the parasitic element 13 and the corresponding microstrip antenna 121 ranges from 0.5 to 2 mm. The width W.sub.1 of the parasitic element 13 ranges from 0.7 to 1.2 mm. In another embodiment, the length L.sub.1 of the parasitic element 13 ranges from 0.2 to 0.6 mm. The effects achieved by the interval between the parasitic element 13 and the microstrip antenna 121 and the width and length of the parasitic element 13 are explained below.

[0026] Regarding the effect caused by the distance between the parasitic element 13 and a single microstrip antenna 121 upon the beamwidth of the antenna unit, the example is illustrated as the dotted-line frame A in FIG. 2. In one embodiment, the length L.sub.1 of the parasitic element 13 is 0.7 mm, and the width W.sub.1 of the parasitic element 13 is 0.1 mm. Referring to FIG. 3 which illustrates the antenna gain corresponding to different intervals D.sub.1, it is shown in the chart that when the interval D.sub.1 between the parasitic element 13 and the microstrip antenna 121 is smaller than 1.1 mm, the 0 degree antenna gain on H-plane (horizontal) gradually rises, while the 45 degree antenna gain gradually lowers. When the interval D.sub.1 is between 1.1 to 2 mm, the 0 degree antenna gain gradually lowers, while the 45 degree antenna gain gradually rises. When the interval D.sub.1 is larger than 2 mm, both gains almost remain in a stable value. The reason possibly lies in that if the distance between the parasitic element 13 and the microstrip antenna 121 is relatively small, current on the parasitic element 13 is almost in a same phase with the current on the microstrip antenna 121, such that the gain along the E-plane (vertical) is increased and the 45 degree antenna gain becomes lower with a narrower beamwidth. When the interval increases, the phase difference is enlarged, such that the beam biases toward upper and lower sides, causing the beamwidth to become wider. However, due to the fact that the coupling amount become smaller along with the variation of the distance, the effect imposed by the parasitic element 13 upon the radiation pattern becomes unobvious when the interval D.sub.1 reaches a certain degree. FIG. 4 is a simulation diagram of the antenna radiation pattern on H-plane (horizontal) when the interval D1 reaches 2 mm, wherein the 0 degree antenna gain is 6.16 dBi and the 45 degree antenna gain is 4.16 dBi.

[0027] Regarding the effect imposed by the length L.sub.1 of the parasitic element 13 upon the antenna gain, in another embodiment, the interval D.sub.1 is fixed at 2 mm. Referring to FIG. 5, it is shown that when the interval D.sub.1 is between 0.7 to 1.1 mm, the 0 degree and 45 degree antenna gain vary in a great level. The reason lies in that the parasitic element 13 now acts as a direction pointing device, such that the beam is biased toward upper and lower sides.

[0028] Further, regarding the effect imposed by the width W.sub.1 of the parasitic element 13 upon the antenna gain, in another embodiment, the length L.sub.1 of the parasitic element 13 is 0.9 mm. Referring to FIG. 6, when the width is increased, the coupling amount is enlarged, and the biasing of the beam toward upper and lower sides becomes obvious, such that the 0 degree antenna gain is lowered, while the 45 degree antenna gain only varies in a small level. FIG. 7 is a simulation diagram of the antenna radiation pattern on H-plane (horizontal) when the width W.sub.1 of the parasitic element 13 is 1 mm.

[0029] Accordingly, the distance of the interval between the parasitic element 13 and the microstrip antenna 121 imposes effects upon the phase difference between the parasitic element 13 and the microstrip antenna 121; the length of the parasitic element 13 imposes effects upon the wave guiding property of the parasitic element 13, and the width of the parasitic element 13 imposes effects upon the coupling amount. Thus, by adjusting such parameters, a wider beamwidth of antenna is achieved.

[0030] In an embodiment, the parasitic elements 13 are disposed in a wideband array. Referring to FIG. 2, when the total length of the antenna is 63 mm, and the interval D.sub.1 between the parasitic element 13 and the microstrip antenna 121 is 2.2 mm, while the length L.sub.1 of the parasitic element 13 is 0.7 mm and the width W.sub.1 of the parasitic element 13 is 0.5 mm, the acquired reflection coefficients are shown as FIG. 8, wherein the acquired result does not significantly differ from the result acquired from a microstrip array antenna without parasitic elements 13. Therefore, the parasitic element 13 does not greatly affect the impedance matching result. FIG. 9(a) to FIG. 9(e) illustrate the simulation diagram of radiation patterns at a frequency of 77 GHz, 78 GHz, 79 GHz, 80 GHz, and 81 GHz, respectively. It is understood that, at a frequency from 77 to 81 GHz, the beam on H-plane (horizontal) becomes wider, while the beam on E-plane (vertical) does not significantly vary. The gain effects are shown in Table 1.

TABLE-US-00001 TABLE 1 frequency gain 77 GHz 78 GHz 79 GHz 80 GHz 81 GHz  0 degree 14.64 dBi 16.24 dBi 17.07 dBi 16.98 dBi 16.40 dBi  45 degree 15.34 dBi 17.40 dBi 16.55 dBi 15.92 dBi 14.69 dBi −45 degree 15.32 dBi 17.38 dBi 16.53 dBi 15.91 dBi 14.69 dBi

[0031] In another embodiment, the wide beam antenna structure 1 further includes a plurality of open grooves 17 disposed between the parasitic elements 13 and the microstrip antennas 121, as shown by FIG. 10. In this embodiment, the length L.sub.2 of the open groove 17 is 1 mm, and the width W.sub.2 of the open groove 17 is 0.1 mm, while the interval D.sub.2 between the open groove 17 and the microstrip antenna 121 is 1 mm. The simulation diagrams of radiation patterns at each frequency are shown by FIG. 11(a) to FIG. 11(e) representing the patterns at 77 to 81 GHz, respectively. The gain effects are shown by Table 2.

TABLE-US-00002 TABLE 2 frequency gain 77 GHz 78 GHz 79 GHz 80 GHz 81 GHz  0 degree 15.98 dBi 16.92 dBi 17.17 dBi 16.92 dBi 15.83 dBi  45 degree 16.70 dBi 17.51 dBi 17.55 dBi 17.20 dBi 16.13 dBi −45 degree 16.76 dBi 17.57 dBi 17.60 dBi 17.27 dBi 16.18 dBi

[0032] Referring to the statistics from the two embodiments above, it is shown that the specific dispositions of the parasitic elements 13 results in a great effect regarding expanding the radiation beam of the antenna structure 1.

[0033] To sum up, by use of the parasitic element to improve the half power beamwidth through guiding the electromagnetic wave toward the waving direction of the parasitic elements, the vision scope of the vehicle radar system or short distance communication operation is increased. Also, by adding the conductive pillar set or open grooves into the antenna structure according to different user demands, the antenna structure is allowed to achieve reverse-feeding and power dividing functions.

[0034] Although particular embodiments of the invention have been described in detail for purposes of illustration, various modifications and enhancements may be made without departing from the spirit and scope of the invention. Accordingly, the invention is not to be limited except as by the appended claims.