APPARATUS AND METHOD FOR THE DETERMINATION OF THE ABSOLUTE COEFFICIENT OF THERMAL EXPANSION IN ULTRALOW EXPANSION MATERIALS
20170328848 · 2017-11-16
Inventors
Cpc classification
G03F7/70958
PHYSICS
International classification
Abstract
An improved method and apparatus for determination of the absolute coefficient of thermal expansion of materials, including ultralow expansion materials, utilizes a metrology frame that is regulated within a first narrow temperature range that varies by only a small fraction of a degree Celsius from a set point temperature (e.g., less than about 0.01° C. from the set point temperature), while the temperature of the sample is varied to determine the coefficient of thermal expansion over a larger temperature range (e.g., 30, 40 or 50° C.). The method and apparatus permit determination of the coefficient of thermal expansion of a material to levels approaching 10.sup.−9/° C.
Claims
1. An apparatus for determination of an absolute coefficient of thermal expansion in a sample, comprising: a frame adapted to hold a sample in a fixed position; at least one optical sensor supported on each of two opposite ends of the frame, the at least one optical sensor adapted to detect the positions of each of two opposite ends of a sample held on the frame; and a temperature regulator in thermal contact with the frame, the temperature regulator adapted to regulate the temperature of the frame independently of the temperature of a sample held on the frame.
2. The apparatus of claim 1, wherein the temperature regulator includes an electric heating element in conductive thermal contact with the frame, a temperature sensor for detecting the temperature of the frame, and a controller for operating the electric heating element to regulate the temperature of the frame within a desired temperature range.
3. The apparatus of claim 1, wherein the frame is made of a material having a linear coefficient of thermal expansion of less than 50×10.sup.9 K.sup.−1 at 20° C.
4. The apparatus of claim 1, wherein the frame is made of titania-silica glass having a linear coefficient of thermal expansion less than 20×10.sup.9 K.sup.−1 at 20° C.
5. The apparatus of claim 1, wherein the at least one optical sensor includes an interferometric sensor.
6. The apparatus of claim 1, further comprising protective radiation shielding positioned to reduce radiative-heat transfer to the frame.
7. The apparatus of claim 1, wherein the at least one optical sensor includes a fiber-based interferometer.
8. The apparatus of claim 1, wherein the at least one optical sensor includes a multi-phase shift interferometric position sensor.
9. The apparatus of claim 1, wherein the at least one optical sensor is held on the frame in a manner that achieves passive athermalization.
10. The apparatus of claim 1, wherein the at least one optical sensor includes at least three optical sensors, the at least three optical sensors including at least two optical sensors having an optical axis aligned with a length direction of a sample held by the frame and directed at a first end of a sample held by the frame, and at least one optical sensor having an optical axis aligned with a sample held by the frame and directed at a second end of a sample held by the frame.
11. The apparatus of claim 1, wherein the at least one optical sensor includes at least six optical sensors, the at least six optical sensors including at least three optical sensors having optical axes directed at non-collinear points of a first end of a sample held by the frame, and at least three sensors having optical axes directed at non-collinear points of a second end of a sample held by the frame.
12. The apparatus of claim 1, wherein at least one of the opposite ends of the sample is coated with a reflective film.
13. The apparatus of claim 12, wherein the reflective film comprises Al.
14. The apparatus of claim 12, wherein the thickness of the reflective film is less than 50 nm.
15. A process for determining an absolute coefficient of thermal expansion in a sample, comprising: supporting a sample on a frame, the sample having a first boundary opposite a second boundary, the frame having a first end opposite a second end, the frame supporting at least one optical sensor on the first end and at least one optical sensor on the second end, the at least one optical sensor supported on the first end directing an optical signal at the first boundary of the sample, the at least one optical sensor supported on the second end directing an optical signal at the second boundary of the sample; regulating the temperature of the frame within a first range that is within ±0.02 K of a set point temperature; varying the temperature of the sample over a second range that is greater than 1K while maintaining the temperature of the frame within the first range; and measuring the change in length of the sample as a function of temperature over the second range.
16. The process of claim 15, wherein the frame comprises a frame material having a Tzc and the temperature of the frame is maintained within a temperature range of about ±0.01° C. of a set point temperature, the set point temperature being within about ±5° C. of the Tzc of the frame material.
17. The process of claim 15, wherein the frame comprises a frame material having a Tzc and the temperature of the frame is maintained within a temperature range of about 0.005° C. of a set point temperature, the set point temperature being within about ±2° C. of the Tzc of the frame material.
18. The process of claim 15, wherein the temperature of the sample is varied non-monotonically.
19. The process in claim 18, wherein the varying sample temperature includes a plurality of temperature steps, each of the temperature steps having a fixed temperature and including a hold time at the fixed temperature.
20. The process of claim 15, wherein the second range extends over at least 25 K and the measuring is completed within a period of 24 hours.
21. The process of claim 15, wherein the first boundary of the sample is coated with a reflective film.
22. The process of claim 21, wherein the reflective film comprises Al.
23. The process of claim 21, wherein the thickness of the reflective film is less than 50 nm.
24. A method comprising: measuring the coefficient of thermal expansion of a sample of a material having a weight less than 50 grams to a precision that is no greater than 10 ppb/K.
25. The method of claim 24, wherein measuring the coefficient of thermal expansion of the sample of material includes supporting a sample on a frame, the sample having a first boundary opposite a second boundary, the frame having a first end opposite a second end, the frame supporting at least one optical sensor on the first end and at least one optical sensor on the second end, the at least one optical sensor supported on the first end directing an optical signal at the first boundary of the sample, the at least one optical sensor supported on the first end directing an optical signal at the second boundary of the sample; regulating the temperature of the frame within a first range that is within ±0.02 K of a set point temperature; varying the temperature of the sample over a second range that is greater than 1K while maintaining the temperature of the frame within the first range; and measuring the change in length of the sample as a function of temperature over the second range.
26. The method of claim 24, wherein the sample has a volume less than 25 cubic centimeters.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
[0031] The semiconductor industry produces the silicon chips that have fueled the information revolution taking place during the late 20.sup.th and early 21.sup.st centuries. The industry has succeeded in this enterprise by continuously improving the performance of semiconductor chips while simultaneously reducing their manufacturing cost. This has been achieved by means of ever increasing the optical resolution of the cornerstone piece of equipment in the semiconductor fabrication, the lithography scanner, which has enabled production of chips with ever shrinking feature sizes. The endeavor for higher resolution has resulted in the reduction of the operating wavelength of the scanners, which has reached the limit practically attainable using traditional, refractive optics at the current wavelength of ˜193 nm, generated by ArF excimer lasers. ArF scanners are about to reach the smallest feature sizes that they are capable of achieving, meaning that the industry needs to find a new technology if it is to continue to increase the density of components within integrated circuits. The most likely candidate to replace optical lithography when this technique reaches the limit of its technical capability is extreme ultraviolet lithography (EUVL). Several pilot-line EUVL tools are currently in operation, and it is expected that chip production using this technology will start in a few years from now. Production-capable EUVL tools are in the design stage at this time. One key difference between current, pilot-line tools, and production tools, is the much higher light source intensity required by the latter in order to fulfill production throughput requirements.
[0032] EUVL is similar to current optical lithography in that it relies on an optical projection system to reproduce features from a master reticle (also known as mask) onto a thin photosensitive layer (resist) deposited on the surface of a semiconductor wafer. EUVL operates at a wavelength of ˜13.4 nm, at which no known material is transparent. Thus, the EUVL projection system needs to be built based on reflective components (mirrors) rather than refractive elements (lenses). The extremely short wavelength of the radiation poses a number of challenges to the EUVL system designers. For example, reflective coatings on the mirrors are fundamentally limited to ˜70% efficiency, implying that 30% of the radiation is lost at each surface. This radiation is absorbed as heat by the mirror substrate, which causes mirror deformation if the material expands or contracts with temperature changes. Additionally, since all gases absorb 13.4 nm radiation, the system needs to operate in vacuum, making it more difficult to remove heat from the mirrors, and exacerbating the problem of mirror heating. Thus, extremely tight requirements are placed on the materials used to make the mirror substrates to be used in a EUVL system. Currently, Ultra Low Expansion (ULE®) glass, (code 7973) made by Corning is the material of choice for production of EUVL projection mirrors. ULE® glass code 7973 has an extremely low coefficient of thermal expansion (CTE) at room temperature, which is critical in allowing the shape of the mirror to stay constant upon heating. The material also possesses other key properties, such as low striae, which enables the production of very precise mirror surfaces, long term chemical and dimensional stability and compatibility with a vacuum environment.
[0033] All materials either expand or contract upon changes in temperature. ULE® glass is characterized by extremely small changes in dimensions at temperatures close to room temperature, as seen in
[0034] Manufacturers encounter difficulties making glass that will satisfy the tight Tzc requirements, and measuring Tzc with the required precision. The current ultrasonic Tzc measurement method does not enjoy full confidence from EUVL equipment manufacturers, who require additional glass samples made from material that correlates to the material used in the part. These samples are measured using Fabry-Perot interferometry, which between sample preparation and testing take a long time and significantly delay shipment of production material. Results from the ultrasonic technique correlate to Fabry-Perot data with a typical error of between 1° C. and 2° C., which in some cases is in the order of the specification range for Tzc. Discrepancies can arise from several factors, including material selection, sample size limitations from each of the techniques, and uncontrolled factors that may affect the empirical calibration used in the ultrasonic technique. These discrepancies are difficult to quantify and hard to eliminate.
[0035] A technique is needed that can measure the temperature dependence of CTE (CTE(T)) directly and economically on a small sample of ULE® glass, allowing immediate verification of Tzc in glass parts, thus significantly reducing lead times, required inventory levels, and potential liability on parts for which FPI measurements are not available. Additionally, the technique would serve to control a post-fabrication annealing process used to fine tune Tzc on individual parts, thus enabling production of parts with Tzc defined within significantly narrower specification ranges. The technique would also be useful in further validating ultrasonic CTE measurements, thus boosting confidence in those results. Further, the technique would enable measurement of CTE(T) of samples of novel ultralow expansion materials, and enable their development. CTE(T) of new materials can thus be characterized in detail even if only small samples are available, thus enabling faster development cycle time than if large samples were requested.
[0036]
[0037] The apparatus 10 (shown in
[0038] In order to perform a thermal expansion measurement, the temperature of the sample 18 needs to be controlled over a temperature range of interest as its changes in length are recorded. On one hand, the sample must be held in a stable position with respect to the measurement frame, so that the length measurements can be performed with high resolution, which generally requires a solid mechanical link between the sample and the measurement frame. It is desirable that the sample and the measurement frame are decoupled from a thermal point of view, since it is critical that the frame remains at a stable temperature while the temperature of the sample is varied. To this end, the sample is held in position by a holder whose dual function is mechanical rigidity and thermal isolation. A preferred material choice for the holder is a low thermal conductivity material, such as ULE® glass. This glass is stable mechanically, will result in minimal displacement of the sample as it changes temperature, and its low thermal conductivity results in low losses of heat from the sample into the measurement apparatus. The shape of the holder is engineered to minimize heat exchange while keeping the sample in a stable position.
[0039] In the illustrated embodiment (
[0040] A small amount of a viscous compound can be used in between the holder top and the sample bottom, mainly to minimize unwanted motion of the sample. A sample block 22 is provided resting above the sample 18. The sample block 22 is preferably manufactured out of a high thermal conductivity material, such as aluminum, copper or other metal, in order to ensure effective control of a uniform temperature distribution throughout the sample. Also provided are electrical heaters 23 within the sample block 22 to allow changing the sample temperature, as well as one or more temperature sensors 21, such as platinum resistive sensors for measurement and control purposes. A controller 25 is used to regulate the electrical heaters in response to the measured temperature. Preferably, a thin layer of high thermal conductivity viscous compound is provided between the sample and sample block, to ensure intimate thermal contact between the two. It is highly desirable that this interfacial compound remains viscous throughout the whole measurement process. If at some point it were to become rigid, it would subject the sample to mechanical stress from thermal expansion in the sample block, potentially resulting in loss of accuracy in the measurements.
[0041] The sample 18 can be prepared in a shape such that its vertical thickness is on the order of at least 5 times smaller than its lateral dimensions, in order to ensure temperature uniformity throughout. The lateral dimensions of the sample block 22 can be the same as those of the sample or alternatively somewhat larger. A sample block smaller than the lateral dimensions of the sample, although not departing from the concept of this invention, may result in less temperature uniformity within the sample. This is acceptable in some cases. The vertical thickness of the sample block is not critical, but it is advantageous for both the sample block and sample not to be too thick, to enable rapid stabilization of the temperature. In one embodiment, one or more ends of sample 18 probed by position sensors 14 and 16 are coated with a reflective film to increase reflection from the sample. The reflective film is made from a highly reflective material. Example reflective films include metals, such as aluminum, silver, or copper. In order to maintain accuracy of the measurement from sample 18, thermal effects from the reflective film need to be minimized. Thermal effects from the reflective film are negligible when the thickness of the reflective film is sufficiently small. The thickness of the reflective film is less than 100 nm, or less than 75 nm, or less than 50 nm, or less than 25 nm, or less than 15 nm, or in the range from 5 nm-100 nm, or in the range from 10 nm-75 nm, or in the range from 5 nm-50 nm, or in the range from 10 nm-50 nm.
[0042] In an alternative embodiment, the holder and the frame are machined out of the same solid piece of material. This embodiment is functionally equivalent to the one shown in
[0043] As depicted in
[0044] In order to achieve maximum stability and measurement accuracy, the frame-holder setup is kept at a constant temperature while the sample temperature is swept through the measurement range of interest. A temperature controlled base 50 is provided with one or multiple heating elements 52, such as electrical heaters that supply thermal energy (heat) to the frame and sensors, and one or more temperature sensors 54, such as platinum resistance sensors or similar. A controller 56 is used to regulate the heater elements in response to measured temperature. The temperature of the frame and sensors is regulated over a very narrow range (e.g., <0.02 K or <0.01 K or <0.005 K). This base is preferably made of a high thermal conductivity material, such as aluminum or other metal, and provides solid mechanical support for the measurement frame, which is placed directly on top of the base. A layer of a viscous compound is preferably provided between the base and the measurement frame to improve thermal contact between the two. This thermal contact is maximized by providing a large area of contact between the base and the bottom of the measurement frame. The base holding the complete setup can be placed within a high vacuum enclosure, where air pressure is preferably kept below 10.sup.−6 bar by means of suitable, commercially available vacuum equipment. The vacuum enables independent temperature control of sample and frame, and eliminates position sensing errors due to air refractivity changes caused by variations in atmospheric conditions. The vacuum is not essential, and measurement accuracy can be preserved at a level acceptable for less critical measurements by providing compensation for atmospheric changes.
[0045] Thermal radiation shields can be provided between the sample and the position sensors, and between the measurement frame and sample holder, in order to minimize changes as the sample temperature is intentionally swept through the measurement range of interest. Similarly, additional radiation shields can be placed covering the exterior of the measurement setup, in order to prevent external temperature changes from inducing temperature changes within the setup. These radiation shields can be firmly attached to the base of the instrument, to ensure temperature uniformity throughout the setup.
[0046] Vibration isolation of the instrument with respect to the external environment can be provided. Since the instrument disclosed herein is quite compact and rigid, its demands for vibration isolation are less stringent than for other similar setups, and sufficient isolation has been achieved by mounting the base of the instrument onto a solid surface by means of inexpensive vibration-absorbing viscoelastic supports such as those supplied by Thorlabs Inc (Newton, N.J.), as part #AV5, made of “Sorbothane®”. This material is also a poor thermal conductor, thus simultaneously providing thermal isolation between the instrument base and the external world. Although not strictly necessary, additional vibration isolation mechanisms, such as an optical table or active vibration cancellation could be provided to enable measurements in noisier environments without departing from the spirit of this invention. Supports made from other similar rubbery materials could be used instead of Sorbothane feet while staying within the scope of this invention.
[0047] The changes in length of the sample are recorded by high resolution position sensors. Suitable sensors and associated optical and electronic components are manufactured and commercialized by attocube systems AG under the name FPS Interferometric Sensors. These fiber-based interferometric sensors provide position detection with resolution at the pico-meter level with high measurement bandwidth into the MHz range. Although a thermal expansion measurement is not generally considered a fast measurement requiring high measurement bandwidth, the wide bandwidth is beneficial in helping to track and ultimately reject any possible vibration of the sample with respect to the measurement frame. The attocube sensor system includes an internal absolute wavelength reference which ensures high stability in the length measurements. Alternatively, multi-phase shift interferometric position sensors such as, or similar to, disclosed by Peale, Duran and Hess in U.S. Pat. No. 6,687,008 can also be used to this effect.
[0048] As shown in
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[0050]
[0051] In
[0052] Without departing from the spirit of the invention, for example, the number of points within a “mini-ramp” can be reduced or expanded, depending on accuracy need and level of drift in the instrument. After reaching a maximum temperature of 334 K at time equal 80 hours, and acquiring data at an extra set point of 328 K for drift correction purposes, the procedure is repeated for decreasing temperature set points, which are interleaved with those acquired while temperature was increased in the first part of the experiment. This decreasing ramp adds measurement points to enhance overall accuracy, and can therefore be partially or completely omitted in order to save measurement time, without departing from the essence of this invention.
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[0056] The adjusted trace in
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[0058] The drift correction algorithm is highly successful, as illustrated by the fact that the data points 34 in
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[0060] The dashed lines in
[0061] Table 1 is a collection of measurements on a set of samples measuring 38 mm in length (25 mm wide, 3.55 mm thick) using the apparatus described herein. The data show that this system is capable of establishing absolute CTE with a maximum error of +/−2 ppb/K. The average of all the errors is significantly less than 1 ppb/K, indicating that the precision of the measurement is 2 ppb/K, and the accuracy better than 0.5 ppb/K, on samples weighing ˜7 grams each. The system can also measure the slope of the CTE(T) curve with a precision of 0.1 ppb/K.sup.2, on the same samples. The errors in slope and absolute CTE are correlated, and they partially compensate when the Tzc is calculated, so the data shows a precision of about 1° C. for Tzc, with accuracy better than 0.5° C.
[0062] The data in Table 1 summarizes measurements carried out on the same apparatus as the one used to gather the data in
[0063] Certain custom-made dilatometers provide better accuracy than the disclosed apparatus. For example, the FPI dilatometer measures Tzc with precision and accuracy around or better than 0.3° C. But making a suitable sample requires more than 100 grams of material, and takes several weeks. The cost of machining the sample is up to 10× higher ($1,500 per sample), the measurement takes 3× longer to make, on a system that is in the order of 3× more expensive. When all factors are included, the cost of a measurement on the disclosed system is estimated to be ˜20× less expensive than for the FPI dilatometer. The “turn-around” time, from the moment the material is ready for measurement to data availability, including sample preparation time, is about 4× faster (2 weeks instead of 8 weeks). These savings are very significant in the context of a manufacturing operation, allowing for a significantly more streamlined production and quality control process.
TABLE-US-00001 TABLE 1 CHRD Measurements Sample Expected Corrected ID CTE20 Slope20 Tzc RunID Orient fitCTE ΔCTE fitSlope Tzc ΔTzc 70A −7 1.51 24.80 3a Std −6.90 0.10 1.468 24.87 0.07 70A −7 1.51 24.80 3b Std −6.87 0.13 1.443 24.94 0.14 70A −7 1.51 24.80 3c Std −6.36 0.64 1.456 24.52 −0.28 70A −7 1.51 24.80 4a Q4 −8.32 −1.32 1.481 25.86 1.07 70A −7 1.51 24.80 4b Q4 −7.58 −0.58 1.455 25.42 0.63 70A −7 1.51 24.80 4c Q4 −5.52 1.48 1.412 24.03 −0.77 70A −7 1.51 24.80 5a Std −7.09 −0.09 1.491 24.93 0.13 71B −24.7 1.59 37.57 3a Std −25.66 −0.96 1.613 38.02 0.45 71B −24.7 1.59 37.57 3b Std −26.14 −1.44 1.601 38.60 1.02 71B −24.7 1.59 37.57 4a Q4 −25.91 −1.21 1.638 37.86 0.29 71B −24.7 1.59 37.57 5a Std −23.43 1.27 1.515 37.62 0.04 71B −24.7 1.59 37.57 5b Std −24.22 0.48 1.545 37.84 0.26 71B −24.7 1.59 37.57 5c Std −23.72 0.98 1.538 37.52 −0.06 71C −24.7 1.59 37.57 3a Std −23.91 0.79 1.508 38.15 0.57 71C −24.7 1.59 37.57 3b Std −24.35 0.35 1.51 38.51 0.93 71C −24.7 1.59 37.57 3c Std −24.2 0.5 1.517 38.26 0.69 71C −24.7 1.59 37.57 3d Std −23.45 1.25 1.499 37.88 0.31 71C −24.7 1.59 37.57 3e Std −22.7 2 1.499 37.22 −0.35 72B −17 1.59 31.58 3a Std −17.32 −0.32 1.537 32.30 0.73 72B −17 1.59 31.58 3b Std −17.08 −0.08 1.502 32.46 0.88 72C −17 1.59 31.58 3a Std −17.75 −0.75 1.542 32.59 1.01 72C −17 1.59 31.58 3b Std −18.25 −1.25 1.549 32.91 1.34 73B −10.6 1.61 26.89 3a Std −9.9 0.7 1.535 26.76 −0.13 73B −10.6 1.61 26.89 3b Std −11.8 −1.2 1.587 27.84 0.95 73C −10.6 1.61 26.89 3a Std −11.12 −0.52 1.606 27.27 0.38 73C −10.6 1.61 26.89 3b Std −11.36 −0.76 1.622 27.35 0.46 73C −10.6 1.61 26.89 3c Std −10.44 0.16 1.612 26.78 −0.12 73C −10.6 1.61 26.89 3d Std −10.53 0.07 1.615 26.82 −0.07 74B −21 1.59 34.62 3a Std −19.77 1.23 1.564 33.95 −0.67 74B −21 1.59 34.62 3b Std −21.61 −0.61 1.596 35.03 0.41 75B −12.6 1.59 28.39 3 Std −12.45 0.15 1.610 28.17 −0.22 76B −12.8 1.65 28.18 3 Std −12.24 0.56 1.637 27.87 −0.31 81117B 0.75 1.60 19.53 1a Std −1.35 −2.1 1.663 20.82 1.28 MAXIMUM ERROR ON ALL SAMPLES ΔCTE ΔTzc Max 2.00 1.34 Min −2.10 −0.77
[0064] The methods disclosed herein can be used for measuring the coefficient of thermal expansion of a sample of a material having a weight less than 50 grams or a volume less than 25 cubic centimeters, or a length less than 100 millimeters to a precision (or standard deviation) that is no greater (i.e., better) than 10 ppb/K, 5 ppb/K, or 3 ppb/K. As used herein, the term “precision” is used to denote a measure of statistical variability attributable to random errors, and is related to reproducibility and repeatability. More specifically, as used herein, the term “precision” is the experimental standard deviation. Accuracy refers to the closeness of a measured value to the true value, and could, in theory coincide with precision when a method and measuring apparatus are perfectly calibrated.
[0065] The described embodiments are preferred and/or illustrative, but are not limiting. Various modifications are considered within the purview and scope of the appended claims.