MULTIPLE PARTICLE BEAM SYSTEM WITH A MIRROR MODE OF OPERATION, METHOD FOR OPERATING A MULTIPLE PARTICLE BEAM SYSTEM WITH A MIRROR MODE OF OPERATION AND ASSOCIATED COMPUTER PROGRAM PRODUCT
20230170181 · 2023-06-01
Inventors
Cpc classification
H01J37/22
ELECTRICITY
H01J37/265
ELECTRICITY
H01J37/244
ELECTRICITY
H01J2237/24564
ELECTRICITY
H01J37/153
ELECTRICITY
H01J37/09
ELECTRICITY
International classification
H01J37/26
ELECTRICITY
H01J37/22
ELECTRICITY
H01J37/147
ELECTRICITY
Abstract
A multiple particle beam system with a mirror mode of operation, a method for operating a multiple particle beam system with a mirror mode of operation and an associated computer program product are disclosed. The multiple particle beam system can be operated in different mirror modes of operation which allow the multiple particle beam system to be inspected and recalibrated thoroughly. A detection system configured to operate in a first detection mode and/or in a second detection mode is used for the analysis.
Claims
1. A multiple particle beam system, comprising: a particle source configured to generate a first charged particle beam; a micro-optical unit comprising a multi-beam generator, the micro-optical unit configured to generate a first field of a multiplicity of charged individual particle beams from the first charged particle beam; a first particle optical unit having a first particle optical beam path, the first particle optical unit configured to direct the individual particle beams at a sample and/or in a direction of a sample so that the first particle beams strike the sample at locations of incidence and/or reach reversal locations upstream of the sample to define a second field; a detection system; a second particle optical unit having a second particle optical beam path, the second particle optical unit configured to image second individual particle beams onto the detection system, the second individual particle beams emanating from: i) the locations of incidence in the second field onto the detection system; or 2) the reversal locations in the second field; a particle optical objective lens configured so that the first and second individual particle beams pass therethrough; a beam switch in the first particle optical beam path between the multi-beam particle source and the objective lens, the beam switch being in the second particle optical beam path between the objective lens and the detection system; a sample region voltage supply configured to provide an adjustable sample region voltage in the sample region; and a controller configured to control the micro-optical unit, the particle optical objective lens, the first particle optical unit, the second particle optical unit, the detection system and the sample region voltage supply, wherein: the detection system has first and second detection modes; in the first detection mode, the second individual particle beams are imaged on detection regions of the detection system which form a third field; in the second mode, a two-dimensional image is generated; the controller is configured to provide a normal mode of operation and a mirror mode of operation; in the normal mode of operation, the detection system is operated in the first detection mode; in the normal mode of operation, the sample region voltage is set so that the first individual particle beams are incident on the sample and release from the sample a multiplicity of secondary particles in the form of second individual particle beams, the secondary particles being imaged on the detection system after passing through the second particle optical unit; in the mirror mode of operation, the detection system is operated in the first and/or in the second detection mode; and in the mirror mode of operation, the sample region voltage is set so that at least some of the first individual particle beams are not incident on the sample but are reflected as second individual particle beams, the second individual particle beams being imaged on the detection system after passing through the second particle optical unit.
2. The multiple particle beam system of claim 1, wherein the sample region voltage supply is configured to apply a variable voltage to the sample stage.
3. The multiple particle beam system of claim 1, wherein the controller is configured so that the multiple particle beam system alternates between the normal mode of operation and the mirror mode of operation.
4. The multiple particle beam system of claim 1, wherein the detection system is configured to achieve the first and second detection modes based exclusively on different controls of the detection system by the controller.
5. The multiple particle beam system of claim 1, wherein the detection system comprises first and second detection units, the first detection unit is controlled by the controller in the first detection mode, and the second detection unit is controlled by the controller in the second detection mode.
6. The multiple particle beam system of claim 5, wherein at least one of the following holds: the first detection unit comprises a particle detection unit and a light detection unit; and the second detection unit comprises a particle detection unit and a light detection unit.
7. The multiple particle beam system of claim 5, wherein at least one of the following holds: the first detection unit comprises an avalanche photodiode; and the second detection unit comprises a CCD camera.
8. The multiple particle beam system of claim 1, wherein the micro-optical unit comprises at least one member selected from the group consisting of: the multi-beam generator; a multi-stigmator configured to individually adjust a stigmation of the first individual particle beams via the controller; and a multi-focus correction mechanism configured to individually correct a focus of the first individual particle beams via the controller.
9. The multiple particle beam system of claim 1, wherein the multi-beam generator comprises a multi-lens array with a multi-aperture plate and with a counter electrode.
10. The multiple particle beam system of claim 1, wherein the multi-beam generator comprises a multi-aperture plate and a multi-deflector array.
11. The multiple particle beam system of claim 1, wherein the first particle optical unit comprises a global lens system.
12. The multiple particle beam system of claim 1, wherein the second particle optical unit comprises a projection lens system.
13. The multiple particle beam system of claim 1, wherein: the detection system is operable in the second detection mode in the mirror mode of operation; in the mirror mode of operation, the sample region voltage is settable via the controller so that the first individual particle beams are not incident on the sample but are reflected as second individual particle beams; in the mirror mode of operation, the second individual particle beams are imageable on the detection system after passing through the second particle optical unit; and the controller is configured in so a way that, in the normal mode of operation and in the mirror mode of operation, the multi-beam generator is controllable in the same way.
14. The multiple particle beam system of claim 1, wherein the controller is configured in such a way that the control of the second particle optical unit is variable in the mirror mode of operation.
15. The multiple particle beam system of claim 1, wherein the controller is configured so that the control of the second particle optical unit is variable step-by-step in the mirror mode of operation, and the detection system is configured to make a recording in in each step.
16. The multiple particle beam system of claim 1, wherein: the detection system is operable in the second detection mode in the mirror mode of operation; in the mirror mode of operation, the sample region voltage is settable via the controller so that the first individual particle beams are not incident on the sample but are reflected as second individual particle beams; in the mirror mode of operation, the second individual particle beams are imageable on the detection system after passing through the second particle optical unit; and the controller is configured so that, in the mirror mode of operation, the multi-beam generator is switched off.
17. A multiple particle beam system, comprising: a particle source configured to generate a first charged particle beam; a micro-optical unit comprising a multi-beam generator, the micro-optical unit configured to generate a first field of a multiplicity of charged individual particle beams from the first charged particle beam; a first particle optical unit having a first particle optical beam path, the first particle optical unit configured to direct the individual particle beams at a sample and/or in a direction of a sample so that the first particle beams strike the sample at locations of incidence and/or reach reversal locations upstream of the sample which define a second field; a detection system; a second particle optical unit having a second particle optical beam path, the second particle optical unit configured to image second individual particle beams onto the detection system, the second individual particle beams emanating from: i) the locations of incidence in the second field onto the detection system; or 2) the reversal locations in the second field; a particle optical objective lens configured so that the first and second individual particle beams pass therethrough; a beam switch in the first particle optical beam path between the multi-beam particle source and the objective lens, the beam switch being in the second particle optical beam path between the objective lens and the detection system; a sample region voltage supply configured to provide an adjustable sample region voltage in the sample region; and a controller configured to control the micro-optical unit, the particle optical objective lens, the first particle optical unit, the second particle optical unit, the detection system and the sample region voltage supply, wherein: the detection system has first and second detection modes; in the first detection mode, the second individual particle beams are imaged on detection regions of the detection system which form a third field; in the second mode, a two-dimensional image is generated; the controller is configured to provide a normal mode of operation and a mirror mode of operation; in the normal mode of operation, the sample region voltage is set so that the first individual particle beams are incident on the sample and release from the sample a multiplicity of secondary particles in the form of second individual particle, the secondary particles being imaged on the detection system after passing through the second particle optical unit; in the first detection mode, the detection system is operated in the normal mode of operation; and in the mirror mode of operation, the sample region voltage is set so that the sample region voltage approximately corresponds to the voltage of the particle source and so that at least some of the first individual particle beams are not incident on the sample but are reflected as second individual particle beams.
18. A method of operating a multiple particle beam system which comprises: a particle source configured to generate a first charged particle beam; a micro-optical unit comprising a multi-beam generator, the micro-optical unit configured to generate a first field of a multiplicity of charged individual particle beams from the first charged particle beam; a first particle optical unit having a first particle optical beam path, the first particle optical unit configured to direct the individual particle beams at a sample and/or in a direction of a sample so that the first particle beams strike the sample at locations of incidence and/or reach reversal locations upstream of the sample to define a second field; a detection system; a second particle optical unit having a second particle optical beam path, the second particle optical unit configured to image second individual particle beams onto the detection system, the second individual particle beams emanating from: i) the locations of incidence in the second field onto the detection system; or 2) the reversal locations in the second field; a particle optical objective lens configured so that the first and second individual particle beams pass therethrough; a beam switch in the first particle optical beam path between the multi-beam particle source and the objective lens, the beam switch being in the second particle optical beam path between the objective lens and the detection system; a sample region voltage supply configured to provide an adjustable sample region voltage in the sample region; and a controller configured to control the micro-optical unit, the particle optical objective lens, the first particle optical unit, the second particle optical unit, the detection system and the sample region voltage supply, wherein: the detection system has first and second detection modes; in the first detection mode, the second individual particle beams are imaged on detection regions of the detection system which form a third field; in the second mode, a two-dimensional image is generated; the controller is configured to provide a normal mode of operation and a mirror mode of operation; in the normal mode of operation, the detection system is operated in the first detection mode; in the normal mode of operation, the sample region voltage is set so that the first individual particle beams are incident on the sample and release from the sample a multiplicity of secondary particles in the form of second individual particle beams, the secondary particles being imaged on the detection system after passing through the second particle optical unit; in the mirror mode of operation, the detection system is operated in the first and/or in the second detection mode; and in the mirror mode of operation, the sample region voltage is set so that at least some of the first individual particle beams are not incident on the sample but are reflected as second individual particle beams, the second individual particle beams being imaged on the detection system after passing through the second particle optical unit, the method comprising operating the multiple particle beam system in the mirror mode of operation, comprising: generating a multiplicity of charged first individual particle beams; reflecting at least some individual particle beams before they reach the sample; and detecting the reflected beams in the form of a multiplicity of second individual particle beams via the detection system in the first detection mode and/or in the second detection mode.
19. One or more machine-readable hardware storage devices comprising instructions that are executable by one or more processing devices to perform operations comprising the method of claim 18.
20. A system comprising: one or more processing devices; and one or more machine-readable hardware storage devices comprising instructions that are executable by the one or more processing devices to perform operations comprising the method of claim 18.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0128] The disclosure will be understood even better with reference to the accompanying figures:
[0129]
[0130]
[0131]
[0132]
[0133]
[0134]
[0135]
[0136]
[0137]
[0138]
DETAILED DESCRIPTION
[0139] Below, the same reference signs denote the same features, even if these are not explicitly mentioned in the text.
[0140]
[0141] The enlarged excerpt I.sub.1 in
[0142] In the embodiment illustrated, the field 103 of locations of incidence 5 is a substantially regular rectangular field having a constant pitch P.sub.1 between adjacent locations of incidence. Exemplary values of the pitch P.sub.1 are 1 micrometer, 10 micrometers and 40 micrometers. However, it is also possible for the field 103 to have other symmetries, such as a hexagonal symmetry, for example.
[0143] A diameter of the beam spots shaped in the first plane 101 can be small. Exemplary values of the diameter are 1 nanometer, 5 nanometers, 10 nanometers, 100 nanometers and 200 nanometers. The focusing of the particle beams 3 for shaping the beam spots 5 is carried out by the objective lens system 100.
[0144] The primary particles striking the object generate interaction products, e.g., secondary electrons, back-scattered electrons or primary particles that have experienced a reversal of movement for other reasons, which emanate from the surface of the object 7 or from the first plane 101. The interaction products emanating from the surface of the object 7 are shaped by the objective lens 102 to form secondary particle beams 9. The particle beam system 1 provides a particle beam path 11 for guiding the multiplicity of secondary particle beams 9 to a detector system 200. The detector system 200 comprises a particle optical unit with a projection lens 205 for directing the secondary particle beams 9 at a particle multi-detector 209.
[0145] The excerpt I.sub.2 in
[0146] The primary particle beams 3 are generated in a beam generation apparatus 300 comprising at least one particle source 301 (e.g., an electron source), at least one collimation lens 303, a multi-aperture arrangement 305 and a field lens 307, or a field lens system made of a plurality of field lenses. The particle source 301 generates at least one diverging particle beam 309, which is collimated or at least substantially collimated by the at least one collimation lens 303 in order to shape a beam 311 which illuminates the multi-aperture arrangement 305.
[0147] The excerpt I.sub.3 in
[0148] Particles of the illuminating particle beam 311 pass through the apertures 315 and form particle beams 3. Particles of the illuminating beam 311 which strike the plate 313 are absorbed by the latter and do not contribute to the formation of the particle beams 3.
[0149] On account of an applied electrostatic field, the multi-aperture arrangement 305 focuses each of the particle beams 3 in such a way that beam foci 323 are formed in a plane 325. Alternatively, the beam foci 323 can be virtual. A diameter of the beam foci 323 can be, for example, 10 nanometers, 100 nanometers and 1 micrometer.
[0150] The field lens 307 and the objective lens 102 provide a first imaging particle optical unit for imaging the plane 325, in which the beam foci 323 are formed, onto the first plane 101 such that a field 103 of locations of incidence 5 or beam spots arises there. Should a surface of the object 7 be arranged in the first plane, the beam spots are correspondingly formed on the object surface.
[0151] The objective lens 102 and the projection lens arrangement 205 provide a second imaging particle optical unit for imaging the first plane 101 onto the detection plane 211. The objective lens 102 is thus a lens that is part of both the first and the second particle optical unit, while the field lens 307 belongs only to the first particle optical unit and the projection lens 205 belongs only to the second particle optical unit.
[0152] A beam switch 400 is arranged in the beam path of the first particle optical unit between the multi-aperture arrangement 305 and the objective lens system 100. The beam switch 400 is also part of the second optical unit in the beam path between the objective lens system 100 and the detector system 200.
[0153] Further information relating to such multi-beam particle beam systems and components used therein, such as, for instance, particle sources, multi-aperture plate and lenses, can be obtained from the international patent applications WO 2005/024881 A2, WO 2007/028595 A2, WO 2007/028596 A1, WO 2011/124352 A1 and WO 2007/060017 A2 and the German patent applications DE 10 2013 026 113 A1 and DE 10 2013 014 976 A1, the disclosure of which in the full scope thereof is incorporated by reference in the present application.
[0154] The multiple particle beam system furthermore comprises a computer system 10 configured both for controlling the individual particle optical components of the multiple particle beam system and for evaluating and analyzing the signals obtained by the multi-detector 209. In this case, the computer system 10 can be constructed from a plurality of individual computers or components. It can also contain the controller according to the disclosure.
[0155]
[0156] A divergent electron beam is emitted from the particle source 301. It is collimated via the collimation lens system 303 to form an illuminating particle beam 311. The latter subsequently strikes a micro-optical unit 306. The micro-optical unit 306 is connected to a first control unit 10.1 of the computer system 10. In the example shown, the micro-optical unit 306 comprises a plurality of components. This includes initially the multi-beam generator 310 (only illustrated schematically), the multi-stigmator 320 and the multi-focus correction mechanism 330. Moreover, a multi-field lens 314 is part of the micro-optical unit 306 in the example shown. However, it is also possible for the micro-optical unit 306 to be constructed differently. However, it is important for the latter to comprise the multi-beam generator 310. By way of example, the latter can comprise a multi-lens array with a multi-aperture plate and with a counter electrode. In addition or as an alternative thereto, the multi-generator 310 can comprise a multi-aperture plate and a multi-deflector array. The multi-beam generator 310 or the micro-optical unit 306 is used to generate a first field of a multiplicity of charged individual particle beams 3, in this case electron beams 3, which subsequently pass through a beam switch 400, go through an aperture 110 and are subsequently imaged in focus on a sample 7 after passing through an objective lens 102. In the process, the locations of incidence on the sample 7 form a second field. The objective lens 102 can be a single objective lens or an objective lens system. Optionally, this is a magnetic objective lens 102. However, other embodiments are also possible.
[0157] Typically, the first electron beams 3 are incident on the sample 7 with a landing energy of between approximately 150 eV and 3000 eV. To this end, for example, the potential of the sample is set by way of the second control unit 10.2 of the computer system 10 to a first potential U.sub.Sample > U.sub.Emitter. As a result, secondary electron beams 9 are released from the sample 7 and pass through the objective lens 102 in turn. Subsequently they pass through the aperture 110 and the beam switch 400. After leaving the latter, the second particle beams 9 pass through a contrast lens 230 or a contrast lens system 230 with an associated contrast aperture 231. Then, they strike a projection lens system 205, by which the second particle beams 9 are imaged in focus on the detection system in the first detection mode or on the first detection unit 209. The detection system in the first detection mode or the first detection unit 209 in this case represents a particle multi-detector. The detection system 209 is controlled by way of a fourth control unit 10.4. Intensity levels of the second election beams 9 are assigned to locations of incidence on the sample 7 and an image of the sample 7 is generated by subsequent evaluation of the measured electron beam intensity levels.
[0158]
[0159] Unlike in the normal mode of operation as per
[0160] Operating the multiple particle beam system 1 in the pupil observation mirror mode of operation makes it is possible to inspect or check the functionality of the multi-generator 310 or of the micro-optical unit 306 overall. Here, it can be the case that the controller 10 of the multiple particle beam system 1 is configured so that the control of the second particle optical unit via a third control unit 10.3 is varied in the pupil observation mirror mode of operation. In addition to the objective lens system 102, the second particle optical unit comprises, for example, the contrast lens system 230 and the projection lens system 205. In this case, the projection lens system 205 can be constructed from a plurality of projection lenses. According to one embodiment variant, the projection lens system comprises exactly two projection lenses; however, it could also comprise three, four or more projection lenses. One of the projection lenses of the projection lens system 205 substantially serves here to set a magnification during the imaging in the second detection mode or on the second detection unit 250, another projection lens substantially serves to set a focus during the imaging. Here, the projection lenses of the projection lens system 205 are typically operated at a few 100 mA and up to approximately at most 200 A. Here, the lenses of the projection lens system 205 are controlled by the control unit 10.3 of the controller 10 according to the disclosure. Depending on how the lenses are controlled, an observation plane 260 in the second particle optical beam path can be displaced. Optionally, the control of the projection lens system 205 is varied step-by-step in the pupil observation mirror mode of operation and a recording is taken in each step within the scope of the second detection mode or via the second detection unit 250.
[0161] The displaceable observation plane 260 allows the second individual particle beams 3 to be imaged at different positions of the second particle optical unit. Planes E1, E2 and E3 are plotted in exemplary fashion in
[0162] If the imaging is implemented by a first control of the projection lens system 205 by the controller 10 according to the disclosure in the plane E1, the image shown in
[0163] If the imaging is implemented by a second control of the projection lens system 205 by the controller 10 according to the disclosure in the plane E2, the image shown in
[0164] An image representation of the plane E3 as a result of a third control of the projection lens system 205 by the controller 10 according to the disclosure is illustrated in
[0165] By way of a fourth control of the projection lens system 205 by way of the controller 10 according to the disclosure, the contrast aperture 231 is imaged on the detection unit 209 or 250. This is illustrated in
[0166] The recordings made, which can be assigned for example to different planes E1, E2, E3 and E4, can be analyzed when zooming through the second particle optical unit and it is possible to identify malfunctions of the multi-beam generator 310 or of other components of the micro-optical unit 306. For example, it is possible to determine whether there are charge accumulations on the multi-beam generator 310.
[0167]
[0168] The strengths of the shadow mirror mode of operation are illustrated in
[0169]
[0170] The shown effects caused by unwanted charge accumulations 380 and 381 are generally very small. However, even these small effects can be made easily visible if the shadow mirror mode of operation is used. They become ever clearer the longer the drift path is for the individual particle beams 3a, 3b, 3c, 3d and 3e. The drift path d2 and the distance d1 are plotted in exemplary fashion in
[0171] Moreover, the functionality of the multi-stigmator 320 and/or of the multi-focus correction mechanism 330 can be tested in a targeted fashion in the shadow mirror mode of operation. To this end, the controller 10 is configured in such a way that, in the mirror mode of operation, the multi-stigmator 320 and/or the multi-focus correction mechanism 330 is switched on. Both the multi-stigmator 320 and the multi-focus correction mechanism 330 cause only small deflections of the individual particle beams 3. Whether these deflections are of the desired form can easily be verified via the shadow mirror mode of operation.
[0172] The detector observation mirror mode of operation represents a further mirror mode of operation. It is very similar to the pupil observation mirror mode of operation. However, the mirror electrons are detected not in the second detection mode but in the first detection mode. In this case, the controller can be configured in such a way that the second individual particle beams 3 are guided over the detection system in the mirror mode of operation such that a scan image of the detection system is generated in the first detection mode. Thus, this mirror mode of operation can be used to check or verify the functionality of the detection regions of the detection system. Moreover, individual beam current measurements can be carried out.
[0173] It is normally the case during the normal operation of a multiple particle beam system 1 that the second individual particle beams are incident substantially at a fixed location and in telecentric fashion on the detection regions of the third field as a result of using scan deflectors. The intensity levels of the incident second individual particle beams are then related to the sample surface or the topology thereof. By contrast, the interaction with the sample 7 is eliminated in the detector observation mirror mode of operation. By switching off scan deflectors or by an alternative control of the scan deflectors via the controller 10, the reflected second individual particle beams 3 are guided over the detection system in the first detection mode. Thus, multiple images arise in each detection region since each of the second individual particle beams 3 is imaged on the detection region.
[0174] Alternatively, it is possible that a position of the second individual particle beams 3 on the detection system 209 is kept constant in the detector observation mirror mode of operation so that it is possible to carry out a detection quantum efficiency analysis for the detection regions of the detection system 209. Statistical noise is expected in this mode of operation. If this is not the case, individual detection regions, for example, can be set differently or can be replaced.
[0175]
[0176]
[0177] According to one embodiment, the controller 10 is configured in such a way that there is such alternating between the charge control mirror mode of operation and the normal mode of operation that, in the charge control mirror mode of operation, local charges on the sample 7 are generated or compensated. Alternating between the two modes therefore ensures that images with a high quality and resolution can be obtained in the normal mode of operation. Thus, the picture does not run away because increasing charge accumulations of the sample 7 make further image recording more difficult. In the case of a corresponding setting in the charge control mirror mode of operation it is even the case that individual particle beams 3 switch off independently, i.e., transition from incidence on the sample to the reflection in front of the sample 7 as soon as the desired charge state is achieved at a location on the sample 7. This is due to the fact that the charge control mirror mode of operation is very sensitive in respect of charge accumulations on the sample surface. Therefore, the charge control mirror mode of operation is also suitable for monitoring or testing charge states on the sample 7. This includes, for example, switching states of circuits.
[0178] In the example illustrated in
[0179]
[0180] A beam splitter 272 is arranged in the light-optical beam path in the example shown in
[0181] The first detection unit 209 can also be designed as a CMOS or CCD sensor, comparable to a detector array. In this case, the detector array can either detect electron beams directly or can comprise a scintillator which converts the incident electron beams into light. In this case, the first detection unit 209 and the second detection unit 250 can be identical.
[0182]
[0183] The following relation applies in a normal mode of operation: U.sub.Sample > U.sub.Emitter. The multi-beam generator 310 is switched on, the second particle optical unit is switched on and the detection system is operated in a first detection mode 209.
[0184] The following relation applies in the pupil observation mirror mode of operation: U.sub.Sample < U.sub.Emitter. Here, the multi-beam generator 310 is switched on, the second particle optical unit is switched on and the detection system is operated in the second detection mode 250.
[0185] The following relation applies in the shadow mirror mode of operation: U.sub.Sample < U.sub.Emitter. The multi-beam generator 310 is switched off. The second particle optical unit is switched on and the detection system is operated in the second detection mode 250.
[0186] The following relation applies in the detector observation mirror mode of operation: U.sub.Sample < U.sub.Emitter. Here, the multi-beam generator 310 is switched on and the second particle optical unit is switched on. The detection system is operated in the first detection mode 209.
[0187] The following relationship applies in the charge control mirror mode of operation: U.sub.Sample ≈ U.sub.Emitter. Here, the multi-beam generator 310 is either switched on or switched off. The second particle optical unit is switched on. The detection system can be switched off. However, it can also be operated in the first detection mode 209 and/or in the second detection mode 250.
[0188] According to an embodiment of the disclosure, the multiple particle beam system comprises at least one operating element such as, for example, an operating field or a switch such that a user can select or set as the mode of operation the normal mode of operation, the pupil observation mirror mode of operation, the shadow mirror mode of operation, the detector observation mirror mode of operation and/or the charge control mirror mode of operation.
LIST OF REFERENCE SIGNS
[0189] 1 Multi-beam particle microscope [0190] 3 Primary particle beams (individual particle beams) [0191] 5 Beam spots, locations of incidence [0192] 7 Object [0193] 8 Sample stage [0194] 9 Secondary particle beams [0195] 10 Computer system, controller [0196] 11 Secondary particle beam path [0197] 13 Primary particle beam path [0198] 100 Objective lens system [0199] 101 Object plane [0200] 102 Objective lens [0201] 103 Field [0202] 110 Aperture [0203] 200 Detector system [0204] 205 Projection lens [0205] 207 Detection region [0206] 209 Particle multi-detector, detection system in the first detection mode, first detection unit [0207] 211 Detection plane [0208] 213 Locations of incidence [0209] 215 Detection region [0210] 217 Field [0211] 230 Contrast lens [0212] 231 Contrast aperture [0213] 250 Detection system in the second detection mode, second detection unit for two-dimensional image, CCD camera [0214] 260 Displaceable observation plane [0215] 270 Scintillator [0216] 271 Light-optical lens [0217] 272 Beam splitter [0218] 273 Light ray [0219] 274 Light ray [0220] 275 Points of incidence [0221] 276 Points of incidence [0222] 277 Optical fiber bundle [0223] 278 Electronic amplifier [0224] 279 Digitizer [0225] 280 Detector optical unit [0226] 281 MultiSEM column [0227] 282 Avalanche photodiode [0228] 300 Beam generation apparatus [0229] 301 Particle source [0230] 303 Collimation lens system [0231] 305 Multi-aperture arrangement [0232] 306 Micro-optical unit [0233] 307 Field lens system [0234] 309 Diverging particle beam [0235] 310 Multi-beam generator [0236] 311 Illuminating particle beam [0237] 313 Multi-aperture plate [0238] 314 Multi-field lens [0239] 315 Openings in the multi-aperture plate [0240] 317 Midpoints of the openings [0241] 319 Field [0242] 320 Multi-stigmator [0243] 323 Beam foci [0244] 325 Intermediate image plane [0245] 330 Multi-focus correction mechanism [0246] 380 Accumulation of positive charge [0247] 381 Accumulation of negative charge [0248] 400 Beam switch