THERMAL CONDUCTIVE SILICONE COMPOSITION

Abstract

The present invention is a thermal conductive silicone composition comprises (C) one or more aluminum nitride particles selected from an irregular-shaped, a round, and a polyhedral particles having an average particle size of 4 .Math.m or more and less than 50 .Math.m; (D) one or more aluminum nitride particles selected from an irregular-shaped, a round, and a polyhedral particles having an average particle size of 50 .Math.m or more and 150 .Math.m or less; and (E) an inorganic particle having an average particle size of 0.1 .Math.m or more and less than 4.0 .Math.m. This provides a thermal conductive silicone composition ensuring both high thermal conductivity and shift resistance.

Claims

1. A thermal conductive silicone composition comprising: (C) one or more aluminum nitride particles selected from an irregular-shaped, a round, and a polyhedral particles having an average particle size of 4 .Math.m or more and less than 50 .Math.m; (D) one or more aluminum nitride particles selected from an irregular-shaped, a round, and a polyhedral particles having an average particle size of 50 .Math.m or more and 150 um or less; and (E) an inorganic particle having an average particle size of 0.1 .Math.m or more and less than 4.0 .Math.m; wherein a total amount of the component (C) and the component (D) is 20 mass% or more and less than 80 mass% in the entire composition, and an amount of the component (E) is 20 mass% or more and less than 50 mass% in the entire composition, a ratio of the component (D) relative to the total amount of the component (C) and the component (D) is 5 mass% or more and less than 50 mass%.

2. The thermal conductive silicone composition according to claim 1, wherein the component (C) is a round aluminum nitride particle.

3. The thermal conductive silicone composition according to claim 1, wherein when a paste of the component (C) with a thickness of 300 .Math.m prepared by mixing 150 parts by mass of the component (C) and 100 parts by mass of a dimethylpolysiloxane having a kinematic viscosity at 25° C. of 1,000 mm.sup.2/s is pressurized at 25° C. and 0.1 MPa for 60 minutes, the thickness of the pressurized silicone composition is 10 .Math.m or more and 100 .Math.m or less.

4. The thermal conductive silicone composition according to claim 2, wherein when a paste of the component (C) with a thickness of 300 .Math.m prepared by mixing 150 parts by mass of the component (C) and 100 parts by mass of a dimethylpolysiloxane having a kinematic viscosity at 25° C. of 1,000 mm.sup.2/s is pressurized at 25° C. and 0.1 MPa for 60 minutes, the thickness of the pressurized silicone composition is 10 .Math.m or more and 100 .Math.m or less.

5. The thermal conductive silicone composition according to claim 1, wherein the component (E) is one or more selected from a metal oxide particle and a metal nitride particle.

6. The thermal conductive silicone composition according to claim 5, wherein the component (E) is one or more selected from an alumina particle, an aluminum nitride particle, and a zinc oxide particle.

7. The thermal conductive silicone composition according to claim 6, wherein the component (E) is an irregular-shaped zinc oxide particle.

8. The thermal conductive silicone composition according to claim 1, further comprising (A) an organopolysiloxane having a kinematic viscosity at 25° C. of 10 to 100,000 mm.sup.2/s.

9. The thermal conductive silicone composition according to claim 8, wherein the component (A) is an organopolysiloxane having one or more aliphatic unsaturated hydrocarbon groups bonded to a silicon atom within one molecule.

10. The thermal conductive silicone composition according to claim 9, further comprising (F) an organohydrogenpolysiloxane having two or more hydrogen atoms bonded to a silicon atom within one molecule, (G) a platinum group metal catalyst, and (H) a reaction inhibitor.

11. The thermal conductive silicone composition according to claim 10, comprising a hydrosilylation reaction product of the component (A) and the component (F) .

12. The thermal conductive silicone composition according to claim 10, wherein a number of the hydrogen atom bonded to a silicon atom within one molecule in the component (F) is 4.0 to 20.0 relative to one aliphatic unsaturated hydrocarbon group bonded to a silicon atom within one molecule in the component (A).

13. The thermal conductive silicone composition according to claim 11, wherein a number of the hydrogen atom bonded to a silicon atom within one molecule in the component (F) is 4.0 to 20.0 relative to one aliphatic unsaturated hydrocarbon group bonded to a silicon atom within one molecule in the component (A).

14. The thermal conductive silicone composition according to claim 9, further comprising (I) an organic peroxide.

15. The thermal conductive silicone composition according to claim 1, further comprising (B) a hydrolysable organopolysiloxane containing an alkoxysilyl group.

16. The thermal conductive silicone composition according to claim 15, further comprising (J) a condensation catalyst.

Description

DESCRIPTION OF EMBODIMENTS

[0048] As described above, development of a thermal conductive silicone composition ensuring both high thermal conductivity and shift resistance has been in demand.

[0049] The inventors of the present invention conducted extensive research to achieve the above object, and consequently found that a thermal conductive silicone composition comprising an aluminum nitride particle having a specific particle size and a shape and an inorganic particle has high thermal conductivity and superior shift resistance. With this finding, the inventors completed the present invention.

[0050] Specifically, the present invention is a thermal conductive silicone composition, comprising: [0051] (C) one or more aluminum nitride particles selected from an irregular-shaped, a round, and a polyhedral particles having an average particle size of 4 .Math.m or more and less than 50 .Math.m; [0052] (D) one or more aluminum nitride particles selected from an irregular-shaped, a round, and a polyhedral particles having an average particle size of 50 .Math.m or more and 150 .Math.m or less; and [0053] (E) an inorganic particle having an average particle size of 0.1 .Math.m or more and less than 4.0 .Math.m; [0054] wherein [0055] a total amount of the component (C) and the component (D) is 20 mass% or more and less than 80 mass% in the entire composition, and [0056] an amount of the component (E) is 20 mass% or more and less than 50 mass% in the entire composition, a ratio of the component (D) relative to the total amount of the component (C) and the component (D) is 5 mass% or more and less than 50 mass%.

[0057] The present invention is described below in detail; however, the present invention is not limited to the examples described below.

Thermal Conductive Silicone Composition

[0058] The thermal conductive silicone composition of the present invention comprises (C) one or more aluminum nitride particles selected from an irregular-shaped, a round, and a polyhedral particles having an average particle size of 4 .Math.m or more and less than 50 .Math.m; (D) one or more aluminum nitride particles selected from an irregular-shaped, a round, and a polyhedral particles having an average particle size of 50 .Math.m or more and 150 .Math.m or less; and (E) an inorganic particle having an average particle size of 0.1 .Math.m or more and less than 4.0 .Math.m; wherein a total amount of the component (C) and the component (D) is 20 mass% or more and less than 80 mass% in the entire composition, and an amount of the component (E) is 20 mass% or more and less than 50 mass% in the entire composition, a ratio of the component (D) relative to the total amount of the component (C) and the component (D) is 5 mass% or more and less than 50 mass%. The thermal conductive silicone composition of the present invention may contain the components (A), (B), (F) to (J) and other components described later. Hereinbelow, each component is described.

Component (C)

[0059] The component (C) is one or more aluminum nitride particles selected from an irregular-shaped, a round, and a polyhedral particles having an average particle size of 4 .Math.m or more and less than 50 .Math.m, preferably 4 .Math.m or more and 30 .Math.m or less. The shape of the component (C) is preferably round, and the round shape herein means that the particles have less corners and are rounded and smooth, and the spherical shape is not included. The round shape is clearly different from the spherical shape in that it has corners. Spherical aluminum nitride is not preferable because it is inferior in thermal conduction property.

[0060] If the average particle size of the component (C) is smaller than 4 .Math.m, the thermal conductivity of the thermal conductive silicone decreases. If the average particle size of the component (C) is 50 .Math.m or more, the resulting silicone composition may not be uniform. In the present invention, the average particle size is a cumulative average diameter D.sub.50 (median diameter) in the particle size distribution on volumetric basis according to the laser diffraction and scattering method, and can be measured by, for example, Microtrac MT330OEX manufactured by Nikkiso Co., Ltd.

[0061] The aluminum nitride particles of the component (C) and the component (D) described later can be synthesized by the known direct nitridation method, reduction nitridation method or the like, and can be formed into an arbitrary particle size range by way of pulverization or the like. In addition, the round aluminum nitride particles can be obtained by heat-treating irregular-shaped or polyhedral aluminum nitride in a non-oxidizing atmosphere at 1,600° C. to 2,000° C.

[0062] The component (C) is preferably such that, when a paste with a thickness of 300 .Math.m prepared by mixing 150 parts by mass of the component (C) and 100 parts by mass of a dimethylpolysiloxane having a kinematic viscosity at 25° C. of 1,000 mm.sup.2/s is pressurized at 25° C. and 0.1 MPa for 60 minutes, the thickness of the pressurized silicone composition is 10 .Math.m or more and 100 .Math.m or less, more preferably 10 .Math.m or more and 50 .Math.m or less. With the component (C) within this range, it is possible to decrease the viscosity of the thermal conductive silicone composition, thereby further improving the workability.

[0063] The component (C) may be one kind or in a combination of two or more kinds.

Component (D)

[0064] The component (D) is one or more aluminum nitride particles selected from an irregular-shaped, a round, and a polyhedral particles having an average particle size of 50 .Math.m or more and 150 .Math.m or less, preferably 60 .Math.m or more and 120 .Math.m or less, more preferably 70 .Math.m or more and 120 .Math.m or less. Spherical aluminum nitride is not preferable because it is inferior in thermal conduction property.

[0065] When the average particle size of the component (D) is less than 50 .Math.m, the thermal conductivity of the obtained thermal conductive silicone composition decreases. When the average particle size of the component (D) is more than 150 .Math.m, the obtained thermal conductive silicone composition tends to be non-uniform.

[0066] The component (D) may be one kind or in a combination of two or more kinds.

[0067] The total amount of the component (C) and the component (D) is 20 mass% or more and less than 80 mass% in the entire composition, and is preferably 50 mass% to less than 80 mass%. When the total amount of the component (C) and the component (D) is less than 20 mass%, the thermal conductivity of the obtained thermal conductive silicone composition decreases. If the total amount of the component (C) and the component (D) is 80 mass% or more, the thermal conductive silicone composition will not be uniform.

[0068] In addition, the ratio of the component (D) relative to the total amount of the component (C) and the component (D) is 5 mass% or more and less than 50 mass%. If the ratio of the component (D) is less than 5 mass%, the thermal conductivity of the thermal conductive silicone composition will be inferior, and if the ratio of the component (D) is 50 mass% or more, the shift resistance of the thermal conductive silicone composition will be inferior.

Component (E)

[0069] The component (E) is an inorganic particle having an average particle size of 0.1 .Math.m or more and less than 4.0 .Math.m, preferably 0.4 .Math.m or more and 2.0 .Math.m or less. If the average particle size is less than 0.1 .Math.m, the viscosity of the thermal conductive silicone composition increases and the handleability decreases. If the average particle size is 4.0 .Math.m or more, the thermal conductive silicone composition will not be uniform.

[0070] The inorganic particle is preferably a metal oxide particle or a metal nitride particle. Specifically, an aluminum oxide particle, an aluminum nitride particle, a zinc oxide particle and the like may be used. It is preferably one or more selected from an aluminum oxide particle, an aluminum nitride particle, and a zinc oxide particle. An irregular-shaped zinc oxide particle is particularly preferable.

[0071] The amount of the component (E) is preferably 20 mass% or more and less than 50 mass%, preferably 25 to 40 mass% in the entire thermal conductive silicone composition. If the component (E) is less than 20 mass%, the thermal conductive silicone composition will not be uniform. If the component (E) is 50 mass% or more, the viscosity of the thermal conductive silicone composition increases and the handleability decreases.

[0072] The component (E) may be one kind or in a combination of two or more kinds.

Component (A)

[0073] The thermal conductive silicone composition of the present invention preferably comprises (A) an organopolysiloxane having a kinematic viscosity at 25° C. of 10 to 100,000 mm.sup.2/s, preferably 30 to 10,000 mm.sup.2/s, and further preferably 100 to 8,000 mm.sup.2/s. When the viscosity is within a predetermined range, the bleeding out of the organopolysiloxane from the thermal conductive silicone composition can be suppressed, and the thermal conductive silicone composition has further superior extensibility. In the present invention, the kinematic viscosity refers to a value measured at 25° C. using an Ostwald viscometer.

[0074] The molecular structure of the organopolysiloxane as component (A) is not particularly limited and may be linear, branched, cyclic, or the like. In particular, it is preferable to have a linear structure in which the main chain is composed of repeating diorganosiloxane units and both terminals of the molecular chain are blocked with triorganosiloxy groups. The organopolysiloxane may be one kind or in a combination of two or more kinds.

[0075] The organopolysiloxane may be represented by the following average composition formula (1).

##STR00001##

[0076] In the average composition formula (1), R.sup.1 independently represents a saturated or unsaturated, unsubstituted or substituted monovalent hydrocarbon group having 1 to 18, preferably 1 to 14 carbon atoms. Examples of the monovalent hydrocarbon group include alkyl groups such as a methyl group, an ethyl group, a propyl group, a hexyl group, an octyl group, a decyl group, a dodecyl group, a tetradecyl group, a hexadecyl group, and an octadecyl group; cycloalkyl groups such as a cyclopentyl group and a cyclohexyl group; alkenyl groups such as a vinyl group and an allyl group; aryl groups such as a phenyl group and a tolyl group; aralkyl groups such as a 2-phenylethyl group and a 2-methyl-2-phenylethyl group; as well as these groups in which a part or all of the hydrogen atoms are substituted with a halogen atom such as fluorine, bromine, and chlorine, a cyano group or the like, for example, a 3,3,3-trifluoropropyl group, a 2-(perfluorobutyl) ethyl group, a 2-(perfluorooctyl) ethyl group, and a p-chlorophenyl group. Among them, a methyl group, a phenyl group and a vinyl group are preferable.

[0077] In the average composition formula (1) above, “a” is a number in the range of 1.8 to 2.2, in particular, in the range of 1.9 to 2.1. When “a” is within the above range, the thermal conductive silicone composition to be obtained may have a desirable viscosity.

[0078] The organopolysiloxane represented by the average composition formula (1) is preferably a linear organopolysiloxane represented by the following formula (2) .

##STR00002##

[0079] In the formula (2) above, R.sup.2 independently represents a saturated or unsaturated, unsubstituted or substituted monovalent hydrocarbon group having 1 to 18, preferably 1 to 14 carbon atoms. Examples of the monovalent hydrocarbon group include the groups mentioned above. Further, it is preferable that at least one R.sup.2 is a vinyl group. “m” is a number with which the organopolysiloxane has a kinematic viscosity at 25° C. of 10 to 100,000 mm.sup.2/s, preferably 30 to 10,000 mm.sup.2/s, more preferably 100 to 8,000 mm.sup.2/s.

[0080] The amount of the component (A) is preferably 0.1 to 60 mass%, more preferably 0.1 to 10 mass%, in the entire composition. Only one kind, or a combination of two or more kinds of the component (A) may be contained.

[0081] Further, the component (A) is preferably an organopolysiloxane having one or more aliphatic unsaturated hydrocarbon groups bonded to a silicon atom within one molecule.

Component (B)

[0082] The component (B) is a hydrolysable organopolysiloxane containing an alkoxysilyl group. The component (B) acts as a surface treatment agent for the components (C) to (E) above. Therefore, by adding the component (B), the thermal conductive silicone composition maintains its flowability even when the composition contains a large amount of the components (C) to (E). It is also possible to suppress a decrease in heat dissipation performance due to oil separation or pumping out over time. Examples of the component (B) include organopolysiloxanes represented by the following general formula (3). In particular, it is preferable to contain a trifunctional hydrolysable organopolysiloxane.

##STR00003##

[0083] In the formula, R.sup.3 independently represents an unsubstituted or substituted monovalent hydrocarbon group. X.sup.1, X.sup.2, and X.sup.3 may be the same or different, and each represent a group represented by R.sup.3 or —(R.sup.4).sub.n—SiR.sup.5.sub.d(OR.sup.6).sub.3-d, given that at least one of X.sup.1, X.sup.2, and X.sup.3 is a group represented by — (R.sup.4).sub.n—SiR.sup.5.sub.d(OR.sup.6).sub.3-d. R.sup.4 is an oxygen atom or an alkylene group having 1 to 4 carbon atoms, R.sup.5 independently represents an unsubstituted or substituted monovalent hydrocarbon group containing no aliphatic unsaturated bonds, R.sup.6 independently represents an alkyl group, an alkoxyalkyl group, an alkenyl group or an acyl group each having 1 to 4 carbon atoms, “n” is 0 or 1, “d” is an integer of 0 to 2. “b” and “c” satisfy 1≤b≤1,000 and 0≤c≤1,000, respectively.

[0084] In the above general formula (3), R.sup.3 independently represents an unsubstituted or substituted monovalent hydrocarbon group having preferably 1 to 10, more preferably 1 to 6, further preferably 1 to 3 carbon atoms. Examples thereof include a linear alkyl group, a branched alkyl group, a cyclic alkyl group, an alkenyl group, an aryl group, an aralkyl group, a halogenated alkyl group, and the like. Examples of the linear alkyl group include a methyl group, an ethyl group, a propyl group, a hexyl group, and an octyl group. Examples of the branched alkyl group include an isopropyl group, an isobutyl group, a tert-butyl group, and a 2-ethylhexyl group. Examples of the cyclic alkyl group include a cyclopentyl group and a cyclohexyl group. Examples of the alkenyl group include a vinyl group and an allyl group. Examples of the aryl group include a phenyl group and a tolyl group. Examples of the aralkyl group include a 2-phenylethyl group and a 2-methyl-2-phenylethyl group. Examples of the halogenated alkyl group include a 3,3,3-trifluoropropyl group, a 2-(nonafluorobutyl)ethyl group, and a 2-(heptadecafluorooctyl)ethyl group. R.sup.3 is preferably a methyl group, a phenyl group or a vinyl group.

[0085] X.sup.1, X.sup.2, and X.sup.3 may be the same or different, and each represent a group represented by R.sup.3 or — (R.sup.4).sub.n—SiR.sup.5.sub.d(OR.sup.6).sub.3- .sub.d, given that at least one of X.sup.1, X.sup.2, and X.sup.3 is a group represented by — (R.sup.4).sub.n—SiR.sup.5.sub.d(OR.sup.6).sub.3-d.

[0086] R.sup.4 is an oxygen atom or an alkylene group having 1 to 4 carbon atoms, and examples of the alkylene group having 1 to 4 carbon atoms represented by R.sup.4 include a methylene group, an ethylene group, a propylene group, a butylene group, and the like. R.sup.5 independently represents an unsubstituted or substituted monovalent hydrocarbon group that has preferably 1 to 10, more preferably 1 to 6, further preferably 1 to 3 carbon atoms, and that does not contain aliphatic unsaturated bonds. Examples thereof include alkyl groups such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a pentyl group, a neopentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, and a dodecyl group; cycloalkyl groups such as a cyclopentyl group, a cyclohexyl group, and a cycloheptyl group; aryl groups such as a phenyl group, a tolyl group, a xylyl group, a naphthyl group, and a biphenylyl group; aralkyl groups such as a benzyl group, a phenylethyl group, a phenylpropyl group, and a methylbenzyl group; as well as these groups in which a part or all of the hydrogen atoms bonded to a carbon atom(s) are substituted with a halogen atom such as fluorine, chlorine, and bromine, a cyano group, or the like.

[0087] The above R.sup.6 independently represents an alkyl group, an alkoxyalkyl group, an alkenyl group, or an acyl group each having 1 to 4 carbon atoms. Examples of the alkyl group represented by R.sup.6 include the same alkyl groups having 1 to 4 carbon atoms as those exemplified as R.sup.3, and the like. Examples of the alkoxyalkyl group include a methoxyethyl group, a methoxypropyl group, and the like. Examples of the alkenyl group include a vinyl group and an allyl group. Preferable Examples of the acyl group represented by the above R.sup.6 include those having 2 to 8 carbon atoms, such as an acetyl group, an octanoyl group, and the like. R.sup.6 is preferably an alkyl group, and particularly preferably a methyl group or an ethyl group.

[0088] “b” and “c” are 1≦b≦1,000 and 0≦c≦1,000, respectively; however, it is preferable that b+c is 10 to 1,000, more preferably 10 to 300. n is 0 or 1, and d is an integer of 0 to 2, preferably 0. In addition, it is preferable that 1 to 6, particularly preferably 3 or 6 OR.sup.6 groups are present in the molecule. The order of bonding of the siloxane units in the parentheses is not limited to that described below.

[0089] Preferable specific examples of the component (B) include the following.

##STR00004##

##STR00005##

##STR00006##

[0090] The amount of the component (B) is preferably 0.1 to 60 mass%, more preferably 1 to 10 mass%, in the entire composition. Only one kind, or a combination of two or more kinds of the component (B) may be contained.

[0091] In the thermal conductive silicone composition of the present invention, if the component (A) is the organopolysiloxane having one or more aliphatic unsaturated hydrocarbon groups bonded to a silicon atom within one molecule, it is possible to obtain an addition reaction type thermal conductive silicone composition by further adding the following components (F) to (H).

Component (F)

[0092] The component (F) is an organohydrogenpolysiloxane having two or more, preferably three or more and less than 40 hydrogen atoms bonded to silicon atoms (SiH groups) in one molecule, that is, an organohydrogenpolysiloxane having two or more hydrogen atoms bonded to silicon atoms in one molecule. The hydrogen atoms bonded to silicon atoms in the molecule undergo an addition reaction with aliphatic unsaturated hydrocarbon groups in the composition in the presence of a platinum group metal catalyst, which is described later, thereby forming a crosslinked structure.

[0093] There are no particular limitations on the molecular structure of the component (F), and the component (F) may have a linear, branched, or cyclic molecular structure, including those represented by the average composition formula (4) shown below.

##STR00007##

[0094] In the average composition formula (4), R.sup.7 independently represents a saturated or unsaturated, unsubstituted or substituted monovalent hydrocarbon group having 1 to 18, preferably 1 to 14 carbon atoms, excluding aliphatic hydrocarbon groups. Examples of the monovalent hydrocarbon group include alkyl groups such as a methyl group, an ethyl group, a propyl group, a hexyl group, an octyl group, a decyl group, a dodecyl group, a tetradecyl group, a hexadecyl group, and an octadecyl group; cycloalkyl groups such as a cyclopentyl group and a cyclohexyl group; alkenyl groups such as a vinyl group and an allyl group; aryl groups such as a phenyl group and a tolyl group; aralkyl groups such as a 2-phenylethyl group and a 2-methyl-2-phenylethyl group; as well as these groups in which a part or all of the hydrogen atoms are substituted with a halogen atom such as fluorine, bromine, and chlorine, a cyano group or the like, for example, a 3,3,3-trifluoropropyl group, a 2-(perfluorobutyl) ethyl group, a 2-(perfluorooctyl) ethyl group, and a p-chlorophenyl group. R.sup.7 is particularly preferably a methyl group or a phenyl group.

[0095] “e” is a positive number of 1.0 to 3.0, preferably 0.5 to 2.5, “f” is a positive number of 0.005 to 2.0, preferably 0.01 to 1.0, and e+f is a positive number satisfying a range of 0.5 to 3.0, preferably 0.8 to 2.5.

[0096] The amount of the component (F) is such that the number of the hydrogen atoms bonded to silicon atoms within one molecule in the component (F) is preferably 4.0 to 20.0, more preferably 8.0 to 20.0, relative to one aliphatic unsaturated hydrocarbon group bonded to a silicon atom within one molecule in the component (A). This range ensures further preferable shift resistance. Only one kind, or a combination of two or more kinds of the component (F) may be contained.

[0097] Further, the present invention preferably contains a hydrosilylation reaction product of the component (A) and the component (F). By incorporating such a component, the shift resistance can be further improved.

Component (G)

[0098] The component (G) is a platinum group metal catalyst to be used to promote the hydrosilylation reaction between the aliphatic unsaturated hydrocarbon group bonded to a silicon atom in the component (A) and the SiH group in the component (F). The platinum group metal catalyst may be a previously-known platinum group metal catalyst for use in addition reaction. Examples include platinum-based catalysts, palladium-based catalysts, and rhodium-based catalysts. Among them, platinum or platinum compounds, which can be relatively easily obtained, are preferred. Examples thereof include elemental platinum, platinum black, chloroplatinic acid, a platinum-olefin complex, a platinum-alcohol complex, a platinum coordination compound, and the like.

[0099] The amount of the component (G) is preferably in a range of 1 to 2,000 ppm, more preferably 2 to 1,000 ppm in terms of the mass of platinum group metal atoms relative to the organopolysiloxane, i.e., the component (A). By setting the amount within this range, the addition reaction is advanced at an appropriate reaction rate.

[0100] Only one kind, or a combination of two or more kinds of the component (G) may be used.

Component (H)

[0101] The component (H) is a reaction inhibitor that suppresses the progress of the hydrosilylation reaction at room temperature, and functions to extend shelf life and pot life. As the reaction inhibitor, a previously-known reaction inhibitor used for addition curing silicone compositions may be used. Examples thereof include acetylene compounds such as acetylene alcohols (e.g. ethynylmethyldecylcarbinol, 1-ethynyl-1-cyclohexanol, and 3,5-dimethyl-1-hexyn-3-ol); various nitrogen compounds such as tributylamine, tetramethylethylenediamine, and benzotriazole; organophosphorus compounds such as triphenylphosphine; oxime compounds; organic chloro compounds; and the like.

Component (I)

[0102] In the thermal conductive silicone composition of the present invention, if the component (A) is the organopolysiloxane having one or more aliphatic unsaturated hydrocarbon groups bonded to a silicon atom within one molecule, it is possible to further enhance the shift resistance of the composition by the radical reaction between the components (A) by adding (I) an organic peroxide.

[0103] The organic peroxide may be a previously-known organic peroxide for use in radical reaction. Examples of the organic peroxide include acyl organic peroxides such as benzoyl peroxide, bis(p-methylbenzoyl) peroxide; alkyl organic peroxides such as di-tert-butyl peroxide, 2,5-dimethyl-2,5-di(tert-butylperoxy)hexane, tert-butylcumyl peroxide and dicumyl peroxide; and ester organic peroxides such as tert-butylperbenzoate.

Component (J)

[0104] When the thermal conductive silicone composition of the present invention contains the component (B) described above, a condensation reaction type thermal conductive silicone composition may be obtained by further adding (J) a condensation catalyst. The condensation reaction of the component (B) further enhances the shift resistance of the thermal conductive silicone composition.

[0105] The condensation catalyst may be a previously-known condensation catalyst for use in condensation reaction. Examples include metal-based catalysts, including titanium esters such as tetrabutyl titanate and tetrapropyl titanate; organotin compounds such as dibutyltin dilaurate, dibutyltin maleate, and dibutyltin diacetate; tin carboxylates such as tin octylate, tin naphthenate, tin laurate, and tin versatate; reaction products of dibutyltin oxide with phthalate ester; dibutyltin diacetylacetonate; organic aluminum compounds such as aluminum triacetylacetonate, aluminum trisethylacetoacetate, diisopropoxy aluminum ethylacetoacetate; chelate compounds such as diisopropoxy-bis(ethyl acetoacetate)titanium, zirconium tetraacetylacetonate, and titanium tetraacetylacetonate; lead octylates; iron naphthenates; bismuth compounds such as bismuth-tris(neodecanoate), bismuth-tris(2-ethylhexanoate); and the like. Further, known amine-based catalysts such as laurylamine may be used. Among them, tin carboxylates or organotin compounds such as dibutyltin dilaurate, dibutyltin maleate, dibutyltin diacetate, tin octylate, tin naphthenate, tin laurate, and tin versatate; reaction products of dibutyltin oxide with phthalate ester; tin-based catalysts such as dibutyltin diacetylacetonate; and chelate compounds such as diisopropoxy-bis(ethyl acetoacetate)titanium are particularly preferable.

Other Components

[0106] The thermal conductive silicone composition of the present invention may contain organo(poly)siloxane having no reactivity, such as methylpolysiloxane, for the purpose of adjusting the elastic modulus and the viscosity. In addition, in order to prevent deterioration of the thermal conductive silicone composition, a known antioxidant such as 2,6-di-t-butyl-4-methylphenol may be added as necessary. Further, a dye, a pigment, a flame retardant, an antisettling agent, a thixotropy improver, or the like can be added as necessary.

Thermal Conductivity

[0107] The thermal conductivity of the thermal conductive silicone composition of the present invention determined by a hot disc method in accordance with ISO 22007-2 is preferably 7.5 W/m.Math.K or more. The upper limit of the thermal conductivity is not limited, however, it is preferably 13.0 W/m.Math.K or less. The method for measuring the thermal conductivity is the method in the Examples described below.

[0108] Since the thermal conductive silicone composition of the present invention has a shift resistance, it is an optimum thermal conductive silicone composition. The method for measuring the shift resistance is as described in the Examples below.

Method for Producing Thermal Conductive Silicone Composition

[0109] The method for producing the thermal conductive silicone composition of the present invention is described below; however, the production of the thermal conductive silicone composition of the present invention is not limited to these methods.

[0110] The production of the thermal conductive silicone composition of the present invention may be performed in accordance with the methods for producing previously-known thermal conductive silicone compositions, and is not particularly limited. For example, the thermal conductive silicone composition of the present invention may be obtained by mixing the components (A) to (J) described above, and, as necessary, other optional components. The mixing device is not particularly limited, and various mixers such as Trimix, Twinmix, Planetary Mixer (all registered trademarks of Inoue MFG., Inc.), Ultramixer (registered trademark of Mizuho Industrial Co., Ltd.) or Hivis Disper Mix (registered trademark of Tokushu Kika Kogyo Co., Ltd.), and the like may be used. In addition, a three-roll finishing process or the like may be performed to break up the aggregation of the component (C), and the components (D) and (E), which are heat conductive fillers.

[0111] In the thermal conductive silicone composition of the present invention, when the component (A) is an organopolysiloxane having one or more aliphatic unsaturated hydrocarbon groups bonded to a silicon atom within one molecule, and when using the components (F) and (G), it is preferable to agitate them at 100° C. or higher for 30 minutes or longer, so that the components (A) and (F) are sufficiently cross-linked by a hydrosilylation reaction, thereby producing a thermal conductive silicone composition having more appropriate viscosity.

EXAMPLES

[0112] The present invention is more specifically described below with reference to Examples and Comparative Examples. However, the present invention is not limited to these Examples. In the following, the kinematic viscosity is a value measured at 25° C. by an Ostwald viscometer (manufactured by Sibata Scientific Technology Ltd.). The thickness of the pressurized component (C) is a value obtained by sandwiching a paste (thickness = 300 .Math.m), which is prepared by mixing 150 parts by mass of the component (C) and 100 parts by mass of dimethylpolysiloxane having a kinematic viscosity at 25° C. of 1,000 mm.sup.2/s, with two circular aluminum plates having a diameter of 12.6 mm and a thickness of 1 mm, followed by pressurization at 25° C. and 0.1 MPa for 60 minutes, and measuring the resulting thickness using a micrometer (manufactured by Mitutoyo Corporation) while subtracting the thickness of the aluminum plates.

[0113] The components used herein are as follows.

Component (A)

[0114] A-1: Dimethylpolysiloxane with both terminals blocked with trimethylsilyl groups, having a kinematic viscosity at 25° C. of 5,000 mm.sup.2/s

[0115] A-2: Dimethylpolysiloxane with both terminals blocked with dimethylvinylsilyl groups, having a kinematic viscosity at 25° C. of 600 mm.sup.2/s (amount of vinyl group = 0.015 mol/g)

[0116] A-3: Dimethylpolysiloxane with both terminals respectively blocked with a dimethylvinylsilyl group and a trimethylsilyl group, having a kinematic viscosity at 25° C. of 700 mm.sup.2/s (amount of vinyl group = 0.005 mol/g)

Component (B)

[0117] B-1: Hydrolysable organopolysiloxane represented by the formula below

##STR00008##

Component (C)

[0118] C-1: Round aluminum nitride particle with D50 of 20.0 .Math.m (thickness after the pressurization = 54 .Math.m)

[0119] C-2: Round aluminum nitride particle with D50 of 11.0 .Math.m (thickness after the pressurization = 32 .Math.m)

[0120] C-3: Round aluminum nitride particle with D50 of 5.0 .Math.m (thickness after the pressurization = 14 .Math.m)

[0121] C-4: Spherical alumina particle with D50 of 10.0 .Math.m (thickness after the pressurization = 25 .Math.m) (component for comparison)

Component (D)

[0122] D-1: Round aluminum nitride particle with D50 of 70.0 .Math.m

[0123] D-2: Round aluminum nitride particle with D50 of 100.0 .Math.m

[0124] D-3: Round aluminum nitride particle with D50 of 120.0 .Math.m

[0125] D-4: Spherical aluminum nitride particle with D50 of 60.0 .Math.m (component for comparison)

[0126] D-5: Spherical alumina particle with D50 of 100.0 .Math.m (component for comparison)

Component (E)

[0127] E-1: Irregular-shaped zinc oxide particle with D50 of 1.2 .Math.m

[0128] E-2: Irregular-shaped zinc oxide particle with D50 of 0.4 .Math.m

[0129] E-3: Round aluminum nitride particle with D50 of 0.7 .Math.m E-4: Irregular-shaped alumina particle with D50 of 1.3 .Math.m

Component (F)

[0130] F-1: Organohydrogenpolysiloxane with both terminals blocked with trimethylsilyl groups, having a kinematic viscosity at 25° C. of 100 mm.sup.2/s and SiH content of 0.0055 mol/g

Component (G)

[0131] G-1: Solution of platinum-divinyltetramethyldisiloxane complex dissolved in the same dimethylpolysiloxane as the above A-2 (platinum atom content: 1 mass%)

Component (H)

[0132] H-1: Ethynylcyclohexanol

Examples 1-14, Comparative Examples 1-5

Preparation of Thermal Conductive Silicone Compositions

[0133] Thermal conductive silicone compositions were prepared by blending the components (A) to (H) described above according to the formulations shown in Tables 1 to 3 below using the method described below.

[0134] The components (A) to (H) were placed in a 5-liter Planetary Mixer (manufactured by Inoue MFG., Inc.) and mixed at 150° C. for 4 hours. The mixture was then cooled to 25° C. to prepare a thermal conductive silicone composition. The viscosity, thermal conductivity, and shift resistance of each composition obtained by the above method were evaluated according to the following methods. Tables 1 to 3 show the results.

Viscosity

[0135] The viscosity of the thermal conductive silicone composition was measured using a spiral viscometer (Type PC-1T: manufactured by Malcom corporation) at 25° C. (10 rpm (Rotor A), shear rate = 6[1/s].)

Thermal Conductivity

[0136] Each composition was wrapped with kitchen wrap into a drawstring-pouch-like form, and the thermal conductivity of the composition in this form was measured using TPA-501 manufactured by Kyoto Electronics Industry Co.,Ltd.

Shift Resistance

[0137] A test piece was prepared by sandwiching 1.0 g of the composition between a 60 mm × 60 mm aluminum plate and glass plate using a spacer so that the thickness was 0.5 mm. After the test piece was allowed to stand vertically at 25° C. for 12 hours, composition(s) that had shifted were evaluated as “Bad” and composition(s) that had not shifted were evaluated as “Good”. Further, the test piece was placed vertically in a thermal test machine that is operated with 1 cycle of -40° C. for 30 minutes and 120° C. for 30 minutes, and the composition that had not shifted after 1,000 cycles was evaluated as “Excellent”.

TABLE-US-00001 Example 1 Example 2 Example 3 Comparative Example 1 composition A-1 19.2 19.2 19.2 19.2 B-1 200 200 200 200 C-1 1860 1860 1860 200 D-2 620 620 620 1200 E-1 1600 0 0 1600 E-3 0 920 0 0 E-4 0 0 1120 0 Content Ratio of (C) 43.2% 51.3% 48.7% 6.2% Content Ratio of (D) 14.4% 17.1% 16.2% 37.3% (C) : (D) 75 : 25 75 : 25 75 : 25 14 : 86 Content Ratio of (C) + (D) 57.6% 68.5% 64.9% 43.5% Content Ratio of (E) 37.5% 25.5% 29.4% 49.7% evaluation Viscosity (Pa.Math.s) 320 340 360 110 Thermal Conductivity (W/m.Math.K) 9.0 8.8 8.4 10.7 Shift Resistance Good Good Good Bad

TABLE-US-00002 Examples 4 5 6 7 8 9 10 11 12 13 14 composition A-2 5.8 5.8 5.8 5.8 5.8 5.8 5.8 5.8 5.8 5.8 5.8 A-3 13.4 13.4 13.4 13.4 13.4 13.4 13.4 13.4 13.4 13.4 13.4 B-1 200 200 200 200 200 200 200 200 200 200 200 C-1 1860 1260 2800 1500 1860 1860 1860 1860 1860 1860 1860 C-2 0 0 0 0 1860 0 0 0 0 0 0 C-3 0 0 0 0 0 1860 0 0 0 0 0 D-1 0 0 0 0 0 0 620 0 0 0 0 D-2 620 1200 400 620 620 620 0 0 620 620 620 D-3 0 0 0 0 0 0 0 620 0 0 0 E-1 1600 1600 1080 2000 1600 1600 1600 1600 1600 1600 0 E-2 0 0 0 0 0 0 0 0 0 0 1600 F-1 3.4 3.4 3.4 3.4 3.4 3.4 3.4 3.4 1.4 5.0 3.4 G-1 0.016 0.016 0.016 0.016 0.016 0.016 0.016 0.016 0.016 0.016 0.016 H-1 0.024 0.024 0.024 0.024 0.024 0.024 0.024 0.024 0.024 0.024 0.024 Content Ratio of (C) 43.2% 29.4% 62.2% 34.5% 60.4% 60.4% 43.2% 43.2% 43.2% 43.2% 43.2% Content Ratio of (D) 14.4% 28.1% 8.9% 14.3% 10.1% 10.1% 14.4% 14.4% 14.4% 14.4% 14.4% (C) : (D) 75 : 25 51 : 49 88 : 12 71 : 29 86 : 14 86 : 14 75 : 25 75 : 25 75 : 25 75 : 25 75 : 25 Content Ratio of (C) + (D) 57.6% 57.5% 71.1% 57.8% 70.5% 70.5% 57.6% 57.6% 57.6% 57.6% 57.6% Content Ratio of (E) 37.3% 37.5% 24.1% 46.3% 26.0% 26.0% 37.3% 37.3% 37.4% 37.3% 37.3% Alkenyl group of (A) / Si-H of (F) 13 13 13 13 13 13 13 13 5 18 13 evaluation Viscosity (Pa.Math.s) 600 900 880 800 740 760 540 540 800 540 700 Thermal Conductivity (W/m.Math.K) 9.1 12.7 7.7 8.4 8.4 7.7 8.7 9.2 9.4 8.7 8.7 Shift Resistance Excellent Excellent Excellent Excellent Excellent Excellent Excellent Excellent Excellent Excellent Excellent

TABLE-US-00003 Comparative Examples 2 3 4 5 composition A-2 5.8 5.8 5.8 5.8 A-3 13.4 13.4 13.4 13.4 B-1 200 200 200 200 C-1 0 1860 1860 1860 C-2 0 0 0 0 C-3 0 0 0 990 C-4 (component for comparison) 2270 0 0 0 D-1 0 0 0 0 D-2 620 0 0 620 D-3 0 0 0 0 D-4 (component for comparison) 0 620 0 0 D-5 (component for comparison) 0 0 620 0 E-1 1600 1600 1600 0 E-2 0 0 0 0 F-1 3.4 3.4 3.4 3.4 G-1 0.016 0.016 0.016 0.016 H-1 0.024 0.024 0.024 0.024 Content Ratio of (C) 0% 43.2% 43.2% 77.2% Content Ratio of (D) 13.2% 0% 0% 16.3% (C) : (D) 0:100 100:0 100:0 82:18 Content Ratio of (C) + (D) 13.2% 43.2% 43.2% 94.0% Content Ratio of (E) 33.9% 37.3% 37.3% 0% Alkenyl group of (A)/Si-H of (F) 13 13 13 13 evaluation Viscosity (Pa.Math.s) 300 480 440 Composition is not uniform Thermal Conductivity (W/m.Math.K) 4.7 6.7 6.8 Shift Resistance Excellent Excellent Excellent

[0138] The results shown in Tables 1 to 3 revealed that the thermal conductive silicone compositions of Examples 1 to 14 that meet the requirements of the present invention can ensure both high thermal conduction property and shift resistance against thermal shock.

[0139] In contrast, Comparative Example 1 in which the ratio of the component (D) relative to the total amount of the component (C) and the component (D) is 50 mass% or more had inferior shift resistance. Furthermore, in Comparative Example 2 using spherical particles instead of the component (C) of the present invention and Comparative Examples 3 and 4 using spherical particles instead of the component (D) of the present invention, the thermal conduction property was inferior. In Comparative Example 5 that does not contain the component (E) of the present invention, the composition was not uniform, and the handleability was significantly inferior.

[0140] It should be noted that the present invention is not limited to the above-described embodiments. The embodiments are just examples, and any examples that substantially have the same feature and demonstrate the same functions and effects as those in the technical concept disclosed in claims of the present invention are included in the technical scope of the present invention.