Method For Producing An Optical Element For An Optical System, In Particular For A Microlithographic Projection Exposure Apparatus

20170315452 · 2017-11-02

    Inventors

    Cpc classification

    International classification

    Abstract

    A method for producing an optical element includes: providing a substrate (102), applying a layer system (103), wherein an optically effective surface (101) is formed and wherein the layer system has a layer (104) that is thermally deformable for manipulating the geometric shape of the optically effective surface, and applying a temperature field to the optical element while at least regionally heating the thermally deformable layer to above a specified operating temperature of the optical system. The thermally deformable layer is configured such that a deformation that is induced when the temperature field is applied is at least partially maintained after the optical element has cooled. Also disclosed is an optical element (400) that has an optically effective surface (401), a substrate (402), and a layer system (403) that has a reflection layer system (406), which includes a shape-memory alloy.

    Claims

    1. A method for producing an optical element for an optical system, comprising: a) providing a substrate; b) applying a layer system onto the substrate to form an optically effective surface of the optical element, wherein the layer system has a thermally deformable layer for manipulating a geometric shape of the optically effective surface; c) applying a temperature field to the optical element while heating the thermally deformable layer in at least a subset of regions of the layer to above a specified operating temperature of the optical system; and d) before the temperature field is applied to the optical element, configuring the thermally deformable layer such that an induced deformation is at least partially maintained after the optical element has cooled to the specified operating temperature; wherein applying the temperature field to the optical element is performed for correcting a production-related shape deviation before the optical element is mounted in the optical system.

    2. The method as claimed in claim 1, wherein the thermally deformable layer has a phase transition, and wherein the phase transition has a hysteresis profile in the temperature dependence of the layer thickness of the thermally deformable layer such that an active deformation that is achieved by applying the temperature field to the optical element is maintained even absent a relevant temperature required for the layer thickness change.

    3. The method as claimed in claim 1, further comprising: prior to applying the temperature field, ascertaining a geometric shape deviation from a predetermined geometric shape that the optically effective surface has at the specified operating temperature, wherein the temperature field following ascertaining the shape deviation is such that an induced deformation of the thermally deformable layer effects at least partial compensation of the ascertained shape deviation.

    4. The method as claimed in claim 1, wherein the applied temperature field varies locally.

    5. The method as claimed in claim 1, wherein the applied temperature field is homogeneous.

    6. The method as claimed in claim 1, wherein the thermally deformable layer is configured such that an error in the optical system is at least partially corrected by the deformation induced when the temperature field is applied.

    7. The method as claimed in claim 1, wherein the thermally deformable layer is made of a material which has, in dependence on the temperature, a phase transition between a martensite phase and an austenite phase.

    8. The method as claimed in claim 7, wherein configuring the thermally deformable layer comprises cooling the thermally deformable layer to below a saturation temperature for the transition from the austenite phase into the martensite phase.

    9. The method as claimed in claim 1, wherein the thermally deformable layer is formed from a Heusler alloy.

    10. The method as claimed in claim 9, wherein the Heusler alloy is selected from the group containing nickel manganese gallium and nickel titanium.

    11. The method as claimed in claim 1, wherein said configuring of the thermally deformable layer comprises targeted changing of the material composition of the thermally deformable layer.

    12. The method as claimed in claim 1, wherein said configuring of the thermally deformable layer comprises applying an external magnetic field.

    13. The method as claimed in claim 1, wherein said configuring of the thermally deformable layer comprises performing a tempering process.

    14. The method as claimed in claim 1, wherein the thermally deformable layer is applied directly on the substrate.

    15. The method as claimed in claim 1, wherein the optical element is a mirror.

    16. The method as claimed in claim 1, wherein the optical element is configured for an operating wavelength of less than 30 nm.

    17. An optical element for an optical system, wherein the optical element has an optically effective surface, comprising: a substrate; and a layer system disposed on the substrate, wherein the layer system has a thermally deformable layer for manipulating a geometric shape of the optically effective surface, wherein, by applying a temperature field to the optical element, a deformation of the thermally deformable layer is induced as the optical element heats to above a specified operating temperature; wherein the thermally deformable layer is configured such that the deformation is at least partially maintained after cooling of the optical element to the specified operating temperature; wherein the thermally deformable layer has a phase transition, wherein the phase transition has a hysteresis profile in the temperature dependence of the layer thickness of the thermally deformable layer such that an active deformation achieved by applying the temperature field to the optical element is maintained even after the relevant temperature required for the layer thickness change has sub sided.

    18. An optical system, comprising an optical element as claimed in claim 17.

    19. An optical element for an optical system, wherein the optical element has an optically effective surface, comprising: a substrate; and a layer system that is disposed on the substrate and has a reflection layer system; wherein the layer system comprises a layer of a shape-memory alloy, wherein by introduction of energy into the layer of the shape-memory alloy, the layer of the shape-memory alloy transforms into an original shape at least partly without the surface deformation of the layer system.

    20. The optical element as claimed in claim 19, wherein the shape-memory alloy includes a titanium nickel alloy, a titanium nickel copper alloy or a titanium nickel palladium alloy.

    21. The optical element as claimed in claim 19, wherein the shape-memory alloy comprises a structured layer in a subset of zones in the layer system.

    22. An optical system comprising an illumination device and/or a projection lens of a microlithographic projection exposure apparatus, comprising an optical element as claimed in claim 19.

    23. The optical system as claimed in claim 22, wherein introduction of thermal energy into the shape-memory alloy produces a compensating deformation of the optically effective surface of the optical element.

    24. The optical system as claimed in claim 22, configured to at least partially compensate for a wavefront disturbance which is present at another location in the optical system through introduction of thermal energy into the shape-memory alloy.

    25. The optical system as claimed in claim 23, wherein the introduction of the thermal energy into the shape-memory alloy comprises at least one of applying electric current to the shape-memory alloy, heating via a heat source or irradiating the shape-memory alloy with electromagnetic radiation.

    26. The optical system as claimed in claim 23, wherein the deformation of the optically effective surface of the optical element has an extent in a lateral plane, with respect to the optically effective surface, of at least 1 mm.sup.2.

    27. The optical system as claimed in claim 23, wherein the deformation of the optically effective surface of the optical element has an extent in a direction that is perpendicular with respect to the optically effective surface in the range of 0.01 to 30 μm.

    Description

    BRIEF DESCRIPTION OF THE DRAWINGS

    [0061] In the figures:

    [0062] FIG. 1 shows a schematic illustration of the possible construction of an optical element according to one embodiment of the invention;

    [0063] FIG. 2 shows a schematic illustration for elucidating a principle underlying the present invention;

    [0064] FIG. 3 shows a schematic illustration of an exemplary geometric shape of the optically effective surface of an optical element that is set during the method according to the invention;

    [0065] FIG. 4 shows a schematic illustration of the possible construction of an optical element according to a further embodiment of the invention;

    [0066] FIG. 5 shows a schematic illustration for elucidating a principle underlying the embodiment of FIG. 4; and

    [0067] FIG. 6 shows a schematic illustration of the possible construction of a microlithographic projection exposure apparatus designed for operation in the EUV range.

    DETAILED DESCRIPTION

    [0068] Furthermore, initially with reference to FIG. 1, one possible construction of an optical element in the form of a mirror is explained by way of a first embodiment of the invention.

    [0069] In accordance with the schematic illustration of FIG. 1, an optical element 100 in the form of an EUV mirror having an optically effective surface that is designated “101,” has, on a substrate 102, a layer system 103 that has, among other things, a reflection layer system 106 which can be made in a known manner and merely by way of example from a succession of molybdenum (Mo) and silicon (Si) layers. “105” denotes a substrate protection layer which serves for protecting, among others, the substrate 102 against an ingress of EUV photons. Moreover, functional layers (e.g. adhesion layers, anti-stress layers etc.) can be present in a known manner in the layer system 103.

    [0070] Incorporated in the layer system 103 is, according to the invention, a thermally deformable layer 104 that is applied over the substrate 102 (e.g. by magnetron sputtering) and is here likewise protected against the ingress of EUV photons by the substrate protection layer 105. For reasons of layer adhesion, for example, a further adhesion-promoting layer can be present between the thermally deformable layer 104 and the substrate 102.

    [0071] According to one embodiment, the thermally deformable layer 104 is made of a material which has, in dependence on the temperature, a phase transition between a martensite phase and an austenite phase, as will be described in more detail below with reference to FIG. 2.

    [0072] This phase transition is now used according to the invention to correct a production-related shape deviation of the optically effective surface 101 retrospectively (with respect to the coating process) after production of the optical element 100, and yet before the optical element 100 is mounted in the optical system (e.g. in the projection lens of a microlithographic projection exposure apparatus described with reference to FIG. 4), specifically by applying a locally varying temperature field to the optical element 100 that causes, with utilization of the phase transition that occurs in the thermally deformable layer 104, a layer thickness change, which locally varies and is dependent on this temperature field, and thus a manipulation of the geometric shape of the optically effective surface 101 that corresponds thereto.

    [0073] The temperature field can be applied, e.g. by introducing infrared radiation by way of an IR laser arrangement, where it is advised to ensure that the setting of the relevant temperature is effected as quickly as possible in the individual zones of the optical element to which different temperatures are to be applied depending on the desired layer thickness change, in other words that the temperature gradient resulting from the different temperatures is set immediately, if possible, and in particular is implemented faster than the heat dissipation that occurs between the respective zones can bring about a significant temperature equalization.

    [0074] After the temperature field is removed, after the optical element 100 has cooled again, the layer thickness change of the deformable layer 104 or the geometric shape of the optically effective surface 101 is now maintained, according to the invention, precisely because—as will be explained below—the deformable layer 104 was previously configured accordingly. This means that the hysteresis profile that is characteristic of the deformable layer 104 in the dependence “layer thickness vs. temperature” is set or manipulated such that, taking into consideration the concretely expected operating temperature of the optical element 100 in the optical system (e.g. in the projection lens), the deformation that is actively attained in the optical element 100 by applying the temperature field is maintained during further operation, that is to say no phase transition of the optical system takes place any longer at operating temperature.

    [0075] FIG. 2 shows a schematic illustration for elucidating the principle underlying the present invention.

    [0076] The diagram of FIG. 2 illustrates a hysteresis profile in the dependence “layer thickness vs. temperature” for an exemplary deformable layer 104 that is present in an optical element 100 according to the invention and consists of a Heusler alloy having a phase transition, occurring in dependence on the temperature, between a martensite phase and an austenite phase, wherein both the principle of the thermally induced layer thickness variation, which is produced in this layer 104 according to the invention, and the suitable configuration of the deformable layer 104, which was effected previously according to the invention, will be described below.

    [0077] What is assumed here is that the Heusler alloy is deposited, for forming the deformable layer 104, on the substrate 102 at a relatively high temperature at which the Heusler alloy is in the austenite phase (position “0” along the hysteresis curve). Proceeding from this state, the optical element 100 or the layer 104 is cooled up to the complete transformation of the material of the layer 104 into the martensite phase (position “1” along the hysteresis curve), i.e. to below the saturation temperature that is valid herefor (which is denoted in FIG. 2 by “M.sub.f” and for which an exemplary value M.sub.f=−20° C. is assumed). The Heusler alloy forming the deformable layer 104 is here actively cooled, if necessary.

    [0078] Once heating to temperature (in the example R.sub.T=20° C.) is complete, a locally varying temperature field is immediately applied to the optical element 100, wherein the optical element 100 is heated at least regionally above the later operating temperature (which can be, e.g., 50° C. or more) with the result that, depending on the position, different temperatures and thus different local expansions or layer thickness changes are attained in accordance with the point on the hysteresis curve that is respectively reached during the heating (e.g. points “3” or “5” in FIG. 2).

    [0079] These points “3” and “5” are located in each case on the increasing flank of the hysteresis curve, with the result that the local expansion or layer thickness change of the deformable layer 104 and thus the manipulation of the geometric shape of the optically effective surface 101 can be adjusted substantially continuously by way of the corresponding temperature setting. FIG. 3 shows a schematic illustration of a merely exemplary variation of the geometric shape of the optically effective surface 101 of an optical element 100 that is set during the method according to the invention.

    [0080] After cooling for example back to room temperature (wherein for example the points “2,” “4” or “6” are reached in FIG. 2), substantially no further local layer thickness change occurs anymore, with the result that the induced deformation is at least partially maintained or “frozen.”

    [0081] It should be pointed out that the temperatures given in FIG. 2 and the concrete profile of the hysteresis curve are merely examples, and, if required, can be adapted accordingly (for example for a higher operating temperature of the optical system).

    [0082] What is taken advantage of according to the invention is that, during subsequent operation of the optical system in which the optical element 100 is placed, the respectively applicable transition temperatures for a further phase transition are no longer reached, with the result that the activity formation that is attained by the application of the temperature field to the optical element 100 is maintained during the further operation of the optical system. This is achieved by way of the fact that the optical element 100 is initially configured in a suitable manner such that the respective transition temperatures have a sufficient distance from the operating temperature (e.g. as shown in FIG. 2).

    [0083] Configuring the optical element 100 initially comprises the above-described cooling to below the saturation temperature for the complete transformation into the martensite phase (position “1” along the hysteresis curve), and additionally also for example a suitable material selection, mixture and post-treatment of the Heusler alloy, as a result of which the respective transition temperatures (i.e. in FIG. 2 the use or saturation temperatures A.sub.s, A.sub.f, M.sub.s and M.sub.f that are applicable for the phase transition into the austenite phase or into the martensite phase) can be additionally manipulated or set in a suitable fashion depending on the operating temperature.

    [0084] In concrete terms, the material of the deformable layer 104 can have, for example, nickel titanium (NiTi) as the Heusler alloy, wherein a shift of the above-mentioned use or saturation temperatures A.sub.s, A.sub.f, M.sub.s and M.sub.f to higher values can be achieved by way of doping or a partial replacement of nickel (Ni) with platinum (Pt) or palladium (Pd). In further embodiments, such manipulation of the above-mentioned use or saturation temperatures A.sub.s, A.sub.f, M.sub.s and M.sub.f can additionally or alternatively (to the conditioning of the layer directly after the position) also be achieved by performing a tempering process and/or applying an external magnetic field.

    [0085] Furthermore, the form and magnitude of the hysteresis curve of FIG. 2 which describes the phase transition can be manipulated. Merely by way of example, the material of the deformable layer 104 can have nickel titanium (NiTi) as the Heusler alloy, wherein a broadening of the hysteresis curve or of the transition region between the respective phases can be achieved by way of doping or partial replacement of nickel (Ni) with hafnium (Hf) in order to manipulate the concrete profile of the layer thickness change between the above-mentioned use or saturation temperatures A.sub.s, A.sub.f, M.sub.s and M.sub.f.

    [0086] In further embodiments, it is possible to take advantage of the fact that both the form of the hysteresis curve describing the phase transition and the above-mentioned use or saturation temperatures A.sub.s, A.sub.f, M.sub.s and M.sub.f can be manipulated by applying an external magnetic field, e.g. to a Heusler alloy made of nickel manganese gallium (NiMnGa).

    [0087] The invention is not limited to the one-time setting of a deformation. In embodiments—for example if the set deformation ultimately deviates from the desired one or if a modification of the deformation becomes necessary for other reasons—it is also possible for another transition of the Heusler alloy first into the austenite phase (position “0” according to FIG. 2) and subsequently into the martensite phase (position “1” in FIG. 2) (as a “reset,” as it were) to occur in order to then attain a modified layer thickness change or active deformation of the optical element 100 by once again applying a temperature field. Furthermore, it is also possible, after the setting of a desired layer thickness change, if necessary (and also without the above-described “reset”) e.g. after a temporary removal of the optical element 100 from the optical system, to apply a modified temperature field with the aim of a modified layer thickness change or deformation of the optical element 100.

    [0088] The invention is furthermore not limited to the application of a locally varying temperature field to the thermally deformable layer. In further embodiments, the thermally deformable layer can also be configured such that an error in the optical system (e.g. an optical aberration or an imaging error of the overall system) is at least partially corrected by way of the deformation that is induced when the temperature field is applied. If, for example, an error of the entire optical system is known in advance, it is possible to work a corresponding locally varying doping into the thermally deformable layer or to perform a locally varying post-treatment (e.g. by tempering or applying a magnetic field) on the layer such that the desired correction can then also be attained by applying a homogeneous temperature field.

    [0089] The construction and function of an optical element according to a further embodiment of the present invention will be described with reference to FIGS. 4 and 5.

    [0090] According to FIG. 4, an optical element 400 according to the invention (in the example once again in the form of an EUV mirror) has on a substrate 402 (which can be made for example of ULE®) a layer system 403 which in turn has a reflection layer system 406. This reflection layer system 406 is, in the exemplary embodiment, configured in the form of a layer stack of TiO.sub.2 and SiO.sub.2 layers, but in further embodiments can also be configured in the form of a layer stack of molybdenum (Mo) and silicon (Si) layers, or also for example as a single layer (for example of ruthenium (Ru)).

    [0091] The layer system 403 furthermore has, in accordance with FIG. 4, a layer 404 of a shape-memory alloy. In the exemplary embodiment, the latter is a titanium nickel copper alloy, with the respective proportions being able to be adapted or varied in suitable fashion. Merely by way of example, a composition Ti.sub.54.9Ni.sub.32.5Cu.sub.12.6 is selected in the exemplary embodiment. In further embodiments, e.g. other titanium nickel alloys are able to be used, merely as an example titanium nickel palladium alloys. If appropriate, other elements can also be contained in the shape-memory alloy. The layer thickness of the layer 404 can, merely by way of example, line the range of (0.1 to 80) μm, with this layer thickness being constant preferably up to ±1%.

    [0092] The layer system 403 can, in addition to the reflection layer system 406 and the layer 404 having the shape-memory alloy, also have further (functional) layers, if appropriate. In this case, the layer 404 having the shape-memory alloy can also be arranged at another location within the layer system 403. Furthermore, the layer 404 can be configured to cover the full area or merely be configured in region-wise or zone-wise fashion. The latter zone-wise configuration can be achieved for example by using a mask when applying the layer 404. A suitable method for plying the layer 404 is in particular magnetron sputtering. If necessary, an adhesion-promoting layer (e.g. of silicon nitride (Si.sub.3N.sub.4)) can be present between the layers (e.g. between the layer 404 and the reflection layer system 406).

    [0093] The function of the shape-memory alloy in the optical system 400 of FIG. 4 will be explained below in more detail with reference to the schematic illustration of FIG. 5. In the illustration of FIG. 5, “510” denotes, merely with great simplification and by way of example, a lattice structure of the shape-memory alloy in the state of the low-temperature phase (martensite in twin structure). A deformation occurring during the operation of the optical system results in the lattice structure denoted by “520” (“detwinned martensite structure”). The relevant deformation can now be compensated for or be reversed according to the invention by way of effecting a transition into the high-temperature phase (austenite structure) by way of an introduction of energy into the shape-memory alloy and an associated temperature increase. The corresponding lattice structure in the thus attained high-temperature phase (austenite structure) is denoted in FIG. 5 with “530” and, as is schematically indicated, is associated with a reversion to the original shape, with this shape also being maintained after cooling, i.e. the transition to the grating structure 510 (martensite).

    [0094] The introduction of energy into the shape-memory alloy can thus be used according to the invention to reverse an undesired deformation (which may be for example thermally induced during the operation of the optical element or of the optical system having this element or may be caused by mechanical stresses, for example as a result of any mounts that are present).

    [0095] The previously mentioned introduction of energy into the shape-memory alloy or the layer 404 can be achieved for example by applying electric current (via electrodes that are not illustrated in FIG. 4), and in other embodiments by way of a direct introduction of thermal energy via a heat source or by way of laser irradiation.

    [0096] In practice, for example the wavefront effect of the optical element 400 of FIG. 4 can be analyzed to determine any surface deformation of the optical element 400 that may occur during the operation of the optical system. In dependence on the occurrence of such a surface deformation of the layer system 403 including the layer 404, it is then possible for the above-described “activation” of the layer 404 to be effected by a corresponding introduction of energy, such that the layer 404 that is returning to its original shape, overall, reverses the surface deformation, and the surface shape of the optical element 400 and the wavefront effect thereof once again correspond to the ideal state before the undesired surface deformation, save for any residual errors. In embodiments, a differently formed wavefront image (on the basis of a Zernike polynomial fitting evaluation) can also be set, wherein a wavefront disturbance present at another location in the optical system can be at least partially compensated for by an active introduction of thermal energy into the shape-memory alloy. The optical element having the shape-memory alloy according to the invention can thus also be used as a correction element to actively compensate for a wavefront disturbance that is present at another location in the optical system by way of setting of a targeted deformation.

    [0097] In embodiments, the layer 404 can be configured from the start such that a targeted influence on specific deformations with possibly one or more preferred directions can be achieved. The merely regional or zone-wise application of the layer 404, which has already been described above, is used for this purpose, in the case of which the layer 404 is structured suitably from the start (e.g. by using a mask in a sputtering method) in order to achieve, e.g. for taking into consideration specific preferred directions of the deformation, e.g. a higher bending moment in such directions and to introduce as little mechanical stress as possible in other regions.

    [0098] FIG. 6 shows a schematic illustration of an exemplary projection exposure apparatus which is designed for operation in EUV and which can comprise an optical element according to the invention. In this context, the reflective optical element can in particular be one of the EUV mirrors present in the illumination device or in the projection lens of the projection exposure apparatus.

    [0099] According to FIG. 6, an illumination device in a projection exposure apparatus 600 designed for EUV comprises a field facet mirror 603 and a pupil facet mirror 604. The light from a light source unit comprising a plasma light source 601 and a collector mirror 602 is directed onto the field facet mirror 603. A first telescope mirror 605 and a second telescope mirror 606 are arranged in the light path downstream of the pupil facet mirror 604. A deflection mirror 607 is arranged downstream in the light path, said deflection mirror directing the radiation that is incident on it onto an object field in the object plane of a projection lens comprising six mirrors 651-656. At the location of the object field, a reflective structure-bearing mask 621 is arranged on a mask stage 620, said mask being imaged with the aid of the projection lens into an image plane, in which a substrate 661 coated with a light-sensitive layer (photoresist) is situated on a wafer stage 660.

    [0100] Even though the invention has been described on the basis of specific embodiments, numerous variations and alternative embodiments are apparent to the person skilled in the art, e.g. by combination and/or exchange of features of individual embodiments. Accordingly, such variations and alternative embodiments are concomitantly encompassed by the present invention, and the scope of the invention is restricted only within the meaning of the accompanying patent claims and the equivalents thereof.