SEMICONDUCTOR DEVICE

Abstract

First and second circuits, a photocoupler and a substrate temperature monitor circuit are formed on a substrate. A photocoupler includes a primary-side light emitting diode that converts an electric signal received from the first circuit into an optical signal, and a light receiving device that converts the optical signal into an electric signal and outputs the electric signal to the second circuit. The substrate temperature monitor circuit reads a Vf voltage value of the primary-side light emitting diode of the photocoupler to monitor temperature of the substrate.

Claims

1. A semiconductor device comprising: a substrate; first and second circuits formed on the substrate; a photocoupler formed on the substrate and including a light emitting diode that converts an electric signal received from the first circuit into an optical signal, and a light receiving device that converts the optical signal into an electric signal and outputs the electric signal to the second circuit; and a substrate temperature monitor circuit reading a Vf voltage value of the light emitting diode of the photocoupler to monitor temperature of the substrate.

2. The semiconductor device according to claim 1, further comprising a constant current circuit that is a drive circuit for the light emitting diode.

3. The semiconductor device according to claim 1, further comprising a power supply circuit supplying a voltage to each of the first and second circuits, wherein the substrate temperature monitor circuit corrects a temperature variation in an output voltage value of the power supply circuit according to the monitored temperature of the substrate.

4. The semiconductor device according to claim 1, wherein the substrate temperature monitor circuit outputs an error signal when the monitored temperature of the substrate has reached a threshold.

5. The semiconductor device according to claim 1, further comprising a signal output circuit outputing a pulse width modulation signal, wherein the substrate temperature monitor circuit corrects the pulse width modulation signal according to the monitored temperature of the substrate and supplying the corrected pulse width modulation signal to the photocoupler.

6. The semiconductor device according to claim 1, further comprising a power supply circuit supplying a voltage to each of the first and second circuits, wherein the power supply circuit includes an aluminum electrolytic capacitor, and the substrate temperature monitor circuit accumulates thermal histories of the aluminum electrolytic capacitor from the monitored temperature of the substrate to predict a life of the aluminum electrolytic capacitor.

7. The semiconductor device according to claim 6, wherein the substrate temperature monitor circuit outputs an error signal when the predicted life of the aluminum electrolytic capacitor has reached life criteria.

8. The semiconductor device according to claim 1, wherein the photocoupler includes a plurality of photocouplers, and the substrate temperature monitor circuit reads the Vf voltage value of the light emitting diode of each of the plurality of photocouplers and averages the read voltage values to monitor the temperature of the substrate.

9. The semiconductor device according to claim 1, wherein the photocoupler includes a plurality of photocouplers, and the substrate temperature monitor circuit reads the Vf voltage value of the light emitting diode of the photocoupler that is located at a position where the temperature of the substrate is highest among the plurality of photocouplers to monitor the temperature of the substrate.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] FIG. 1 is a diagram showing a semiconductor device according to Embodiment 1 of the present invention.

[0010] FIG. 2 is a graph showing Vf voltage characteristics of the light emitting diode of the photocoupler.

[0011] FIG. 3 is a diagram showing a semiconductor device according to Embodiment 2 of the present invention.

[0012] FIG. 4 is a diagram showing a semiconductor device according to Embodiment 3 of the present invention.

[0013] FIG. 5 is a diagram showing a semiconductor device according to Embodiment 4 of the present invention.

[0014] FIG. 6 is a diagram showing a semiconductor device according to Embodiment 5 of the present invention.

[0015] FIG. 7 is a diagram showing a semiconductor device according to Embodiment 6 of the present invention.

[0016] FIG. 8 is a graph showing a life curve of the aluminum electrolytic capacitor.

[0017] FIG. 9 is a diagram showing a semiconductor device according to Embodiment 7 of the present invention.

[0018] FIG. 10 is a diagram showing a semiconductor device according to Embodiment 8 of the present invention.

DESCRIPTION OF EMBODIMENTS

[0019] A semiconductor device according to the embodiments of the present invention will be described with reference to the drawings. The same components will be denoted by the same symbols, and the repeated description thereof may be omitted.

Embodiment 1

[0020] FIG. 1 is a diagram showing a semiconductor device according to Embodiment 1 of the present invention. On a substrate 1, first and second circuits 2 and 3, a photocoupler 4, and a substrate temperature monitor circuit 5 are formed. The photocoupler 4 includes a primary-side light emitting diode 6 that converts an electric signal received from the first circuit 2 into an optical signal, and a light receiving device 7 that converts the optical signal into an electric signal and outputs the electric signal to the second circuit 3. The photocoupler 4 transmits signals from the first circuit 2 and the second circuit 3, while providing electrical isolation between the first circuit 2 and the second circuit 3.

[0021] FIG. 2 is a graph showing Vf voltage characteristics of the light emitting diode of the photocoupler. As shown in the figure, the Vf voltage of the primary-side light emitting diode 6 has a temperature dependence. Accordingly, the substrate temperature monitor circuit 5 reads the Vf voltage value of the primary-side light emitting diode 6 of the photocoupler 4, thereby monitoring the temperature of the substrate 1. Since the photocoupler 4 is originally equipped in the device, the photocoupler 4 can monitor the temperature of the substrate 1, without the need for adding a component such as a thermocouple or a thermistor. The monitored temperature is fed back to various sensing circuits to cancel a variation in circuit characteristics due to the temperature, thereby achieving an improvement in the precision of sensing functions.

Embodiment 2

[0022] FIG. 3 is a diagram showing a semiconductor device according to Embodiment 2 of the present invention. A constant current circuit 8 is used as a drive circuit for the primary-side light emitting diode 6. With this configuration, substrate temperature information can be accurately monitored.

Embodiment 3

[0023] FIG. 4 is a diagram showing a semiconductor device according to Embodiment 3 of the present invention. A power supply circuit 9 supplies a voltage to each of the first and second circuits 2 and 3. The substrate temperature monitor circuit 5 corrects a temperature variation in the output voltage value of the power supply circuit 9 according to the monitored temperature of the substrate 1. Thus, the temperature information is fed back to the power supply circuit 9 and a variation in the power supply voltage value due to temperature characteristics is corrected, thereby making it possible to improve the precision of the drive system for the semiconductor device.

Embodiment 4

[0024] FIG. 5 is a diagram showing a semiconductor device according to Embodiment 4 of the present invention. The substrate temperature monitor circuit 5 outputs an error signal when the monitored temperature of the substrate 1 has reached a threshold. A control circuit 10 which has received the error signal interrupts the operation of each of the first and second circuits 2 and 3. Thus, the error signal is output during abnormal heat generation in the substrate 1, thereby making it possible to properly protect the semiconductor device.

Embodiment 5

[0025] FIG. 6 is a diagram showing a semiconductor device according to Embodiment 5 of the present invention. A signal output circuit 11 outputs a pulse width modulation (PWM) signal. The substrate temperature monitor circuit 5 corrects a PWM signal according to the monitored temperature of the substrate 1 and supplies the PWM signal to the photocoupler 4. Thus, the temperature is monitored by the substrate temperature monitor circuit 5 and the monitored temperature is fed back, thereby making it possible to correct a variation in transmission of a duty of the PWM signal of the photocoupler 4 that is caused due to temperature characteristics.

Embodiment 6

[0026] FIG. 7 is a diagram showing a semiconductor device according to Embodiment 6 of the present invention. The power supply circuit 9 includes an aluminum electrolytic capacitor 12. The substrate temperature monitor circuit 5 refers to a preliminarily stored life curve of the aluminum electrolytic capacitor 12, and accumulates thermal histories of the aluminum electrolytic capacitor 12 from the monitored temperature of the substrate 1, to thereby predict the life of the aluminum electrolytic capacitor 12. FIG. 8 is a graph showing a life curve of the aluminum electrolytic capacitor. Based on this life curve, the life of the aluminum electrolytic capacitor 12 can be accurately predicted.

[0027] The substrate temperature monitor circuit 5 outputs an error signal when the predicted life of the aluminum electrolytic capacitor 12 has reached life criteria. An error output part 13 which has received the error signal notifies a user of the error by display, voice, or the like. Thus, the semiconductor device can be properly protected, and a time for replacement of the semiconductor device can be detected.

Embodiment 7

[0028] FIG. 9 is a diagram showing a semiconductor device according to Embodiment 7 of the present invention. A plurality of photocouplers 4 is formed on the substrate 1. Although the illustration of the first and second circuits 2 and 3 and the like is omitted, the configurations of these components are similar to those of any one of Embodiments 1 to 6.

[0029] The substrate temperature monitor circuit 5 reads the Vf voltage value of the primary-side light emitting diode 6 of each of the plurality of photocouplers 4, and averages the read voltage values, thereby monitoring the temperature of the substrate 1. Thus, the temperature of the substrate is monitored by the plurality of photocouplers 4, thereby making it possible to more accurately monitor the temperature of the substrate 1.

Embodiment 8

[0030] FIG. 10 is a diagram showing a semiconductor device according to Embodiment 8 of the present invention. A plurality of photocouplers 4 is formed on the substrate 1. Although the illustration of the first and second circuits 2 and 3 and the like is omitted, the configurations of these components are similar to those of any one of Embodiments 1 to 6.

[0031] The substrate temperature monitor circuit 5 reads the Vf voltage value of the primary-side light emitting diode 6 of the photocoupler 4 that is located at a position where the temperature of the substrate 1 is highest among the plurality of photocouplers 4, thereby monitoring the temperature of the substrate 1. Thus, one of the photocouplers 4 is monitored, thereby minimizing the cost and sensing processing.

REFERENCE SIGNS LIST

[0032] 1 substrate; 2 first circuit; 3 second circuit; 4 photocoupler; 5 substrate temperature monitor circuit; 6 primary-side light emitting diode; 7 light receiving device; 8 constant current circuit; 9 power supply circuit; 10 control circuit; 11 signal output circuit; 12 aluminum electrolytic capacitor