INTEGRATED ACOUSTIC TRANSDUCER WITH REDUCED PROPAGATION OF UNDESIRED ACOUSTIC WAVES

Abstract

An acoustic device includes a micro-machined acoustic transducer element, an acoustically attenuating region, and an acoustic matching region arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic transducer element is formed in a first substrate housing a cavity delimiting a membrane. A second substrate of semiconductor material integrating an electronic circuit is arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic matching region has a first interface with the second substrate and a second interface with the acoustically attenuating region. The acoustic matching region has an impedance matched to the impedance of the second substrate in proximity of the first interface, and an impedance matched to the acoustically attenuating region in proximity of the second interface.

Claims

1. An acoustic device, comprising: a micro-machined acoustic transducer element; an acoustically attenuating region; and an acoustic matching region arranged between the acoustic transducer element and the acoustically attenuating region.

2. The device according to claim 1, wherein the acoustic transducer element is formed in a first substrate housing a cavity delimiting a membrane.

3. The device according to claim 2, further comprising a second substrate of semiconductor material integrating an electronic circuit and arranged between the acoustic transducer element and the acoustically attenuating region.

4. The device according to claim 3, wherein the acoustic matching region is arranged between the acoustic transducer element and the second substrate.

5. The device according to claim 4, wherein the acoustic matching region is formed in the first substrate of the acoustic transducer element.

6. The device according to claim 4, wherein the acoustic matching region is formed in a semiconductor material body arranged between the first substrate and the second substrate.

7. The device according to claim 5, wherein the acoustic matching region is a first acoustic matching region, the device further comprising a second acoustic matching region arranged between the second substrate and the acoustically attenuating region.

8. The device according to claim 7, wherein the second acoustic matching region is formed in the second substrate.

9. The device according to claim 4, wherein the acoustic matching region is arranged between the second substrate and the acoustically attenuating region.

10. The device according to claim 9, wherein the acoustic matching region is formed in the second substrate.

11. The device according to claim 9, wherein the acoustic matching region is formed in a semiconductor material body arranged between the second substrate and the acoustically attenuating region.

12. The device according to claim 10, wherein the second acoustic matching region is formed in a semiconductor material body arranged between the second substrate and the acoustically attenuating region.

13. The device according to claim 3, wherein the first acoustic matching element comprises a variable impedance layer.

14. The device according to claim 13, wherein the acoustic matching region has a first interface with a first element chosen between the acoustic transducer element and the second substrate and a second interface with a second element chosen between the second substrate and the acoustically attenuating region, the first element having a first impedance and the second element having a second impedance, and the acoustic matching region has a third impedance in proximity of the first interface, matched to the first impedance, and a fourth impedance in proximity of the second interface, matched to the second impedance.

15. The device according to claim 14, wherein the acoustic matching region is of porous silicon.

16. The device according to claim 15, wherein the acoustic matching region has a plurality of pores, wherein the sizes of the pores are variable between the first and second interfaces.

17. The device according to claim 15, forming an ultrasonic transducer.

18. The device according to claim 1, wherein the acoustic matching region is made of porous silicon.

19. The device according to claim 18, wherein the porous silicon acoustic matching region includes a plurality of pores, and wherein sizes of the pores are variable between a first interface facing the acoustic transducer element and a second interface facing the acoustically attenuating region.

20. The device according to claim 19, wherein a size of the pores at the first interface produces an acoustic impedance matching an acoustic impedance of a material supporting the acoustic transducer element and a size of the pores at the second interface produces an acoustic impedance matching an acoustic impedance of a material supporting the acoustically attenuating region.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] For a better understanding of the present invention, preferred embodiments thereof are now described purely by way of non-limiting example, with reference to the attached drawings, wherein:

[0014] FIG. 1 is a cross-section through a known acoustic transducer element;

[0015] FIG. 2 is a cross-section through the present acoustic transducer element;

[0016] FIG. 3 shows an enlarged detail of the acoustic transducer element of FIG. 2;

[0017] FIG. 4 shows an enlarged portion of the detail of FIG. 3;

[0018] FIGS. 5-9 are cross-sections of different embodiments of the present acoustic transducer element; and

[0019] FIG. 10 is a cross-section of a device having a plurality of transducer elements shown in FIGS. 2-9 and formed in a single substrate so as to form an array.

DETAILED DESCRIPTION OF THE DRAWINGS

[0020] FIG. 2 shows an embodiment of an acoustic transducer device, designated as a whole by the reference number 10.

[0021] The acoustic transducer device 10 comprises a transducer element 15 formed in a substrate 25 of semiconductor material. The substrate 25 has a cavity 19 that delimits, at the bottom, a membrane 16, a first electrode 20 and a second electrode 21, arranged over the membrane 16 and on the bottom of the cavity 19, respectively. The substrate 15, typically of mono- and/or polycrystalline silicon, may be traversed by through vias 26 of electrically conductive material.

[0022] An ASIC 30 is bonded to the substrate 25 on the side thereof remote with respect to the membrane 16. The ASIC 30 has a first face 30A and a second face 30B and comprises a substrate 29 forming an active area 31 facing the first face 30A. The active area 31 accommodates electronic circuits (not illustrated), connected to the substrate 25 of the acoustic transducer element 15 through pads 27 and electrical connection lines (not illustrated). The pads 27 are in contact with the through vias 26 of the substrate 25 of the acoustic transducer element 15, inside an insulating layer 28, overlying the substrate 29.

[0023] In FIG. 2, the ASIC 30 further forms an acoustic matching element 32, extending from the second face 30B towards the inside of the substrate 29. The acoustic matching element 32 is here in contact with an acoustically attenuating region 40 bonded to the second face 30B of the ASIC 8.

[0024] The acoustic matching element 32 forms a first interface 32A with the substrate 29 of the ASIC 30 and a second interface 32B with the acoustically attenuating region 40, as shown in the enlarged detail of FIG. 3.

[0025] The acoustic matching element 32 is of porous silicon and has a variable impedance between the first and second interfaces 32A, 32B. In detail, the impedance value of the acoustic matching element 32 in proximity of each interface 32A, 32B is chosen to correspond to the acoustic impedance of the material with which it is in contact. In particular, the first interface 32A has an acoustic impedance similar to that of the substrate 29 of the ASIC 30, and the second interface 32B has an acoustic impedance similar to that of the acoustically attenuating region 40.

[0026] The impedance matching on the two interfaces 32A, 32B enables a reduction of the reflected acoustic energy. In fact, the acoustic energy reflected on the interface 32A is given by:

[00001]$U_{32.Math.A}=\frac{Z_{32.Math..Math.A}-Z_{29}}{Z_{32.Math..Math.A}+Z_{29}}.Math.U_T$

[0027] where Z.sub.32A is the impedance of the acoustic matching element 32 in proximity of the first interface 32A, Z.sub.29 is the impedance of the material of the substrate 29 (silicon), and U.sub.T is the acoustic energy transmitted backwards by the transducer element 15.

[0028] By modulating the impedance Z.sub.32A of the acoustic matching element 32 in proximity of the first interface 32A so that it is approximately equal to the impedance Z.sub.29 of the silicon substrate 29, Z.sub.32A Z.sub.29, the reflected acoustic energy may be drastically reduced almost to zero.

[0029] Likewise, the acoustic energy reflected on the interface 32B is given by:

[00002]$U_{32.Math.B}=\frac{Z_{32.Math..Math.B}-Z_{40}}{Z_{32.Math..Math.B}+Z_{40}}.Math.U_{T.Math..Math.1}$

[0030] where Z.sub.32B is the impedance of the acoustic matching element 32 in proximity of the second interface 32B, Z.sub.40 is the impedance of the material of the acoustically attenuating region 40, and U.sub.T1 is the acoustic energy traversing the second interface 32B.

[0031] Also in this case, by modulating the impedance Z.sub.32B of the acoustic matching element 32 in proximity of the second interface 32B so that it is approximately equal to the impedance Z.sub.40 of the acoustically attenuating region 40, Z.sub.32A Z.sub.40, the acoustic energy reflected on the second interface 32B is reduced.

[0032] In practice, any acoustic waves that propagate back from the membrane 16 do not encounter any discontinuity in the impedance of the materials that they traverse, and therefore do not generate acoustic waves reflected towards the membrane 16, thus preventing any undesirable interference phenomena with the useful acoustic signal.

[0033] Variation of impedance of the acoustic matching element 32 is obtained by modulating the porosity of the porous silicon. In particular, the porosity may be regulated by selectively modifying the size of the pores so that it is smaller in proximity of the first interface 32A and larger in proximity of the second interface 32B, varying continuously from the first interface 32A to the second interface 32B.

[0034] The acoustic matching element 32 may, for example, be manufactured by selectively doping the substrate 29 of the ASIC 30 starting from the second face 32A with P-type dopant (for example, boron), and performing an electrochemical etch. In particular, before forming the electrical components in the active part 31, the semiconductor material wafer intended to form the ASIC 30 is implanted with the P-type dopant and then immersed in an acid bath. By applying an appropriate potential difference and modulating the current flowing in the wafer with time, pores are formed within the doped area. In particular, as explained in the article by S. Matthias, F. Müller, J. Schilling, U. Gösele, “Pushing the limits of microporous silicon etching”, Appl. Phys. A 80, 1391-1396 (2005) (incorporated by reference), the porosity, and thus the diameter of the pores, as a function of the depth may be modulated by varying the etching parameters, in particular the applied voltage and the current flowing during the etching time so as to obtain the desired impedance values.

[0035] The acoustic matching region 32 may also be obtained starting from a region with an N-type doping (for example, doped with phosphorus), which is rendered porous via an electrochemical etch, possibly carried out under exposure to ultraviolet and/or visible light. Also in this case, the porosity, and thus the diameter of the pores, may be modulated as a function of the depth by accordingly varying the etching parameters, in particular the voltage and the current flowing during the etching time.

[0036] FIG. 4 shows in detail an example of the porous silicon structure of FIG. 3.

[0037] In another embodiment, shown in FIG. 5, the acoustic matching element, here designated by 132, is formed within the substrate, here designated by 125, instead of inside the ASIC 130. In this case, the impedance of the interfaces 132A and 132B is similar to that of the substrate 125 and to that of the ASIC 130, respectively.

[0038] FIG. 6 shows a further embodiment comprising a first and a second acoustic matching element 232, 233. The first acoustic matching element 232 is similar to the acoustic matching element 132 of FIG. 5. It is thus formed in the substrate 225 of the acoustic transducer element 215 and has, in proximity of a first interface 232A, an impedance similar to that of the substrate 225, and, in proximity of a second interface 232B, an impedance similar to that of the ASIC 230. The second acoustic matching element 233 is similar to the acoustic matching element 32 of FIG. 2. It is thus formed in the ASIC 230 and has, in proximity of a first interface 233A, an impedance similar to that of the ASIC 230, and, in proximity of a second interface 233B, an impedance similar to that of the acoustically attenuating region 240.

[0039] In this way, there is a double acoustic matching both between the substrate 225 and the ASIC 230 and between the ASIC 230 and the acoustically attenuating region 240.

[0040] In another embodiment, shown in FIG. 7, the acoustic matching element, here designated by 332, is formed as a separate chip, arranged between the ASIC 330 and the acoustically attenuating region 340. Also in this case, the impedance of the faces 332A and 332B is similar to that of the ASIC 330 and to that of the acoustically attenuating region 340, respectively.

[0041] In another embodiment, shown in FIG. 8, the acoustic matching element, here designated by 432, is formed as a separate chip, arranged between the substrate 425 of the acoustic transducer element 415 and the ASIC 430. Also in this case, the impedance of the faces 432A and 432B is similar to that of the substrate 425 and to that of the ASIC 430, respectively.

[0042] FIG. 9 shows a variation of the embodiment of FIG. 6, wherein the first and second acoustic matching elements, here designated by 532, 533, are both formed in separate dice.

[0043] In all the illustrated embodiments, the acoustic matching element or elements 32, 132, 232, 332, 432, 532, 233, 533, reduce generation of undesired reflected waves by eliminating any sharp variations of impedance.

[0044] The described solutions further have the advantage that the use of porous silicon enables considerable freedom of design, in particular as regards the reduction of parasitic capacitances between the ASIC 30, 130, 230, 330, 430, 530 and the substrate 25, 125, 225, 325, 425, 525.

[0045] The described acoustic transducer device 10, 110, 210, 310, 410, 510 above may comprise a plurality of transducer elements having the structures illustrated in FIGS. 2-9 and formed in a single substrate. For instance, FIG. 10 shows a substrate 625 housing a plurality of transducer elements 615, each whereof arranged on a respective active area 631 and a respective acoustic matching region 632.

[0046] The acoustic transducer device of FIG. 10 may form, for example, an ultrasonic transducer (either of a capacitive type, referred to as CMUT, and of a piezoelectric type, referred to as PMUT) for medical use, operating at frequencies comprised between 1 and 15 MHz. It may, however, be used for consumer applications wherein a high degree of miniaturization is desired, such as in gesture recognition mobile devices. Further, it may also be used for high-voltage devices and optical devices.

[0047] Finally, it is clear that modifications and variations may be made to the device described and illustrated herein, without thereby departing from the scope of the present invention, as defined in the attached claims.

[0048] For instance, the acoustically attenuating region 40 could be arranged between the transducer element 15 and the ASIC 8. In this case, the acoustic matching element may be arranged between the transducer element 15 and the acoustically attenuating region 40.