Radiation Emitting Device and Method of Manufacturing A Radiation Emitting Device

Abstract

In an embodiment a radiation emitting device includes a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

Claims

1.-19. (canceled)

20. A radiation emitting device comprising: a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface; and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

21. The radiation emitting device according to claim 20, wherein the refractive index of the potting decreases continuously starting from the radiation exit surface.

22. The radiation emitting device according to claim 20, wherein a change in the refractive index is constant as a function of a distance from the radiation exit surface.

23. The radiation emitting device according to claim 20, wherein the matrix material is selected from polysiloxanes.

24. The radiation emitting device according to claim 20, wherein the nanoparticles comprise or consist a material selected from metal oxides.

25. The radiation emitting device according to claim 20, wherein a diameter of the nanoparticles is not larger than 10 nanometers.

26. The radiation emitting device according to claim 20, wherein the concentration of the nanoparticles in the potting is greater than 50% by weight and does not exceed 80% by weight.

27. The radiation emitting device according to claim 20, wherein the semiconductor chip is embedded in the potting.

28. The radiation emitting device according to claim 20, further comprising phosphor particles embedded in the matrix material, wherein the phosphor particles are configured to convert the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range.

29. The radiation emitting device according to claim 28, wherein the phosphor particles are comprised by a conversion layer, wherein the nanoparticles are comprised by a particle layer, and wherein the conversion layer is arranged closer to the radiation exit surface of the semiconductor chip than the particle layer.

30. A method for manufacturing a radiation emitting device, the method comprising: providing, in a cavity, a semiconductor chip, the semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface; introducing a first liquid potting material into the cavity, wherein the first potting material comprising a first matrix material and a plurality of nanoparticles; introducing a second liquid potting material into the cavity, wherein the second liquid potting material comprises a second matrix material and is free of nanoparticles; and sedimenting the nanoparticles in the first matrix material and/or mixing the second potting material with the first potting material so that a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip and so that a refractive index of the first and second potting decreases starting from the radiation exit surface of the semiconductor chip.

31. The method according to claim 30, wherein a continuous decrease in the refractive index of the potting is achieved starting from the radiation exit surface.

32. The method according to claim 30, wherein sedimenting the nanoparticles in the potting material is enhanced with a centrifuge.

33. The method according to claim 32, wherein a plurality of devices are arranged on a curved carrier of the centrifuge.

34. The method according to claim 33, wherein a center point of each device has the same distance to a pivot point of the centrifuge.

35. The method according to claim 30, wherein the liquid potting materials are cured after the sedimentation and/or the mixing.

36. The method according to claim 30, wherein the first liquid potting material and/or the second liquid potting material are applied by one of the following methods: spray coating, casting, jetting, (screen) printing, or doctoring.

37. The method according to claim 30, further comprising introducing phosphor particles into the first matrix material, wherein the phosphor particles are configured to convert the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Further advantageous embodiments and further embodiments of the device and the method result from the exemplary embodiments described below in connection with the figures.

[0049] FIG. 1 and FIG. 2 show a schematic sectional view of a radiation emitting device according to each exemplary embodiment;

[0050] FIG. 3 shows a schematic sectional view of a nanoparticle according to an exemplary embodiment;

[0051] FIGS. 4, 5, 6, 7, and 8, respectively, show schematic sectional views for various method stages of a method for manufacturing a radiation emitting device according to an exemplary embodiment;

[0052] FIGS. 9, 10, 11 show method stages of a conventional method of manufacturing a radiation emitting device; and

[0053] FIG. 12 shows a method stage of a method for manufacturing a radiation emitting device according to an exemplary embodiment.

[0054] Elements that are identical, similar or have the same effect are given the same reference signs in the figures. The figures and the proportions of the elements shown in the figures are not to be regarded as true to scale. Rather, individual elements, in particular layer thicknesses, may be shown exaggeratedly large for better representability and/or understanding.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0055] FIG. 1 shows a schematic sectional view of a radiation emitting device 1 comprising a semiconductor chip 2 which, in operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface 3. Further, the radiation emitting device 1 comprises a potting 4 comprising a matrix material 5 and a plurality of nanoparticles 6. The semiconductor chip 2 is surrounded by the potting 4. The surface of the semiconductor chip 2 opposite to the radiation exit surface 3 is disposed on a carrier element 22 for stabilization and is not surrounded by the potting 4. The concentration of the nanoparticles 6 in the matrix material 5 decreases starting from the radiation exit surface 3 of the semiconductor chip 2, so that a refractive index of the potting 4 decreases continuously starting from the radiation exit surface 3 of the semiconductor chip 2. That is, a portion of the potting 4 adjacent to the radiation exit surface 3 of the semiconductor chip 2 has a larger refractive index than a portion of the potting 4 located farther away from the semiconductor chip 2.

[0056] The matrix material 5 is selected from the group of polysiloxanes. Polysiloxanes are organosilicon compounds in which two silicon atoms are bonded to one another via an oxygen atom. Preferably, polysiloxanes have an organic group on the silicon atom. For example, the organic group is a methoxy, methyl, phenyl, or phenoxy group. The organic group of the polysiloxanes affects the refractive index of the matrix material. The polysiloxanes exhibit a high thermal stability and stability to the electromagnetic radiation of the semiconductor chip 2.

[0057] The nanoparticles 6 comprise a material or consist of a material selected from the group of metal oxides. The diameter of the nanoparticles 6 is not greater than 10 nanometers.

[0058] The radiation emitting device 1 according to the exemplary embodiment of FIG. 2 comprises a semiconductor chip 2, a carrier element 22, a conversion layer 9 and a particle layer 10. In operation, the semiconductor chip 2 emits electromagnetic radiation of a first wavelength range from a radiation exit surface 3. The semiconductor chip 2 is embedded in the conversion layer 9. The conversion layer 9 comprises phosphor particles 8 and a matrix material 5. The particle layer 10 is in direct contact with the conversion layer 9. The particle layer 10 comprises a matrix material 5 and nanoparticles 6. The particle layer 10 and the conversion layer 9 together form the potting 4. The conversion layer may also comprise nanoparticles 6 and the particle layer 10 may comprise phosphor particles 8.

[0059] The concentration of the nanoparticles 6 and the phosphor particles 8 in the matrix material 5 of the potting 4 decreases starting from the radiation exit surface 3 of the semiconductor chip 2, so that a refractive index of the potting 4 decreases starting from the radiation exit surface 3 of the semiconductor chip 2.

[0060] In the conversion layer 9, phosphor particles 8 are embedded in the matrix material 5. These convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. In other words, the phosphor particles 8 impart wavelength-converting properties to the potting 4. The phosphor particles 8 comprise or are formed from a garnet phosphor and/or a nitride phosphor. Furthermore, the phosphor particles 8 have a larger diameter than the nanoparticles 6. In the present case, the phosphor particles 8 have a diameter between 1 micrometer inclusive and 30 micrometers inclusive.

[0061] FIG. 3 shows a schematic sectional view of a nanoparticle 6 according to an exemplary embodiment. The nanoparticle 6 is coated with a shell 7. The shell 7 comprises a silicone and/or silicon dioxide or consists of a silicone and/or silicon dioxide. Preferably, the shell 7 is formed thin. “Thin” in this context means that the shell has a thickness between at least 1 nanometer and at most 5 nanometers. Advantageously, the shell 7 leads to a reduction in the agglomeration of nanoparticles 6 in the matrix material 5. A homogeneous distribution of the nanoparticles 6 in the matrix material 5 is consequently improved.

[0062] In the method according to the exemplary embodiment of FIGS. 4 to 8, a cavity 11 is provided in a first step (FIG. 4). The semiconductor chip 2, which in operation emits electromagnetic radiation of a first wavelength range from a radiation exit surface 3, is introduced into the cavity 11. The surface of the semiconductor chip 2 opposite the radiation exit surface 3 is arranged on a carrier element 22 for mechanical stabilization and is not surrounded by the potting 4.

[0063] In a next step, a first liquid potting material 12 comprising nanoparticles 6, phosphor particles 8 and a first matrix material 14 is introduced into the cavity 11. Here, the semiconductor chip 2 is surrounded by the first liquid potting material 12. The first liquid potting material 12 may be introduced into the cavity 11 by spray coating or by casting.

[0064] In a further step, a second liquid potting material 13 is introduced into the cavity 11 by casting or spray coating (FIG. 6). The second liquid potting material 13 comprises a second matrix material 15 and is presently free of nanoparticles 6 and free of phosphor particles 8. The matrix materials 14 and 15 may be the same. The first liquid potting material is not cured while the second liquid potting material is applied.

[0065] In a next step, the first liquid potting material 12 mixes with the second liquid potting material 13 so that the concentration of the nanoparticles 6 and the phosphor particles 8 in the matrix material 5, starting from the radiation exit surface 3 of the semiconductor chip 2, decreases. As a result, a refractive index of the potting 4, starting from the radiation exit surface 3 of the semiconductor chip, decreases (FIG. 7). Simultaneously or alternatively, the nanoparticles 6 and the phosphor particles 8 sediment in the matrix material 5 due to the gravitational force acting on them. Due to the generally larger diameter and a larger weight of the phosphor particles 8 in relation to the diameter and a weight of the nanoparticles 6, the sedimentation of the phosphor particles 8 here leads to an arrangement in which the phosphor particles 8 are arranged closer to the radiation exit surface 3 of the semiconductor chip 2 than the nanoparticles 6. The first matrix material 14 and the second matrix material 15 have a low viscosity in the liquid state.

[0066] As shown in FIG. 8, in a final step of the method, the liquid potting material 12 and 13 is cured after sedimentation and/or mixing. For example, the liquid potting material 12 and 13 is cured at about 150° C. to form a potting 4. In this method, the potting 4 is formed.

[0067] In the conventional method shown in FIG. 9, a centrifuge 16 is used. A plurality of devices 1 are arranged on a flat carrier 17. The plurality of devices 1 are rotated on the carrier 17 about a pivot point 19. The distances 20 between a pivot point 19 and a center point of each device 18 are different from each other. A centrifugal force direction 21 of the centrifugal force acting on the devices 1 is indicated by arrows. The centrifuge 16 is capable of conveying the nanoparticles 6 to the vicinity of the radiation exit surface 3 of the semiconductor chip 2 by a centrifugal force due to a uniform circular motion of the carrier around the pivot point 19.

[0068] FIG. 10 shows a section marked A in FIG. 9, in which a base surface of the device 1 is perpendicular to the centrifugal force direction 21 and thus feels an almost homogeneous centrifugal force over an entire base surface. This arrangement leads to an almost homogeneous sedimentation of the nanoparticles in the liquid potting material.

[0069] FIG. 11 shows a section marked B in FIG. 9, which is different from section A. The base surface of the device 1 according to FIG. 11 is not perpendicular to the centrifugal force direction 21, but encloses an acute angle with the centrifugal force direction 21. Thus, the device 1 according to FIG. 9 feels an inhomogeneous centrifugal force over its entire base surface. This arrangement leads to inhomogeneous sedimentation of the nanoparticles in the liquid potting material.

[0070] In the method according to the exemplary embodiment of FIG. 12, a plurality of devices 1 are arranged on a curved carrier 17. A center point 18 of each device 1 to the pivot point 19 of the centrifuge 16 has the same distance 20 to the pivot point 19 of the centrifuge 16. In this case, a shorter distance 20 between the pivot point 19 and the center point of each device 18 can be selected with advantage, which results in a high centrifugal force. Thus, the nanoparticles 6 can be sedimented more easily and more quickly, which leads to a uniform layer formation during the sedimentation.

[0071] The invention is not limited to these by the description based on the exemplary embodiments. Rather, the invention encompasses any new feature as well as any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.