Abstract
A reference voltage generator includes a depletion NMOS transistor of a first conductivity type for causing a constant current to flow, and an enhancement NMOS transistor of the first conductivity type diode-connected to the depletion NMOS transistor to generate a reference voltage. A resistor surrounds the periphery of the depletion NMOS transistor and the periphery of the enhancement NMOS transistor. A diode is connected in series to a constant current source and provides a voltage that controls current flowing through the resistor when the environment temperature is lower than a preset temperature. The reference voltage generator can operate under a given preset temperature environment because a voltage consumed in the resistor becomes approximately constant in accordance with the voltage provided from the diode.
Claims
1. A reference voltage generator, comprising: a depletion NMOS transistor configured to cause a constant current to flow; an enhancement NMOS transistor diode-connected to the depletion NMOS transistor to generate a reference voltage; a resistor surrounding a periphery of both the depletion NMOS transistor and the enhancement NMOS transistor, a constant current source; and a diode connected in series to the constant current source, wherein the diode provides a voltage that controls a current flowing through the resistor when an environmental temperature is lower than a preset temperature.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) FIG. 1A is a schematic top plan view illustrating features of a reference voltage generator according to an embodiment of the present invention.
(2) FIG. 1B is a schematic circuit diagram illustrating the features of the reference voltage generator according to the embodiment of the present invention.
(3) FIG. 2 is a schematic characteristic graph showing the features of the reference voltage generator according to the embodiment of the present invention.
(4) FIG. 3 is a schematic characteristic graph showing a reference voltage generator in the related art.
(5) FIG. 4 is a schematic circuit diagram illustrating the reference voltage generator in the related art.
DETAILED DESCRIPTION OF THE EMBODIMENT
(6) An embodiment of the present invention is now described with reference to the attached drawings. Firstly, a reference voltage generator according to an embodiment of the present invention is described below with reference to a schematic top plan view of FIG. 1A and a schematic circuit diagram of FIG. 1B.
(7) The reference voltage generator includes a depletion NMOS transistor (hereinafter referred to as a D type NMOS transistor) 1 and an enhancement NMOS transistor (hereinafter referred to as an E type NMOS transistor) 2. The arrangement of the D type NMOS transistor 1 and the E type NMOS transistor 2 is identical to that in the case of the reference voltage generator shown in FIG. 4 in the related art in terms of a circuit configuration.
(8) The reference voltage generator according to the embodiment of the present invention, as illustrated in FIG. 1A, includes a resistor 3 so as to surround the periphery of the D type NMOS transistor land the E type NMOS transistor 2. The resistor 3, for example, can be formed of a polycrystalline silicon film. A resistance value of the resistor 3 can be freely set by selecting a size, a thickness, and a concentration of impurities to be diffused of the polycrystalline silicon film.
(9) The reference voltage generator according to the embodiment of the present invention, as illustrated in FIG. 1B, further includes a PMOS transistor 4 which is connected in series to the resistor 3 described above, an NMOS transistor 6 which is connected in parallel to the PMOS transistor 4 and in series to another resistor 5, and a diode 8 which is connected in parallel to the NMOS transistor 6 and in series to a constant current source 7 which can be trimmed with high precision. The constant current source 7 of each of the individual ICs can be trimmed for a preset temperature, and hence a bit which is subordinate to a trimming fuse has resolution enough to enable a value of the constant current to be sufficiently set with high precision. The preset temperature, for example, is 40° C.
(10) In the reference voltage generator according to the embodiment of the present invention, the constant current source 7 is trimmed with high precision for the preset temperature described above, and hence a constant voltage can be applied to a point A of FIG. 1B on the anode side of the diode 8 under a preset temperature environment. An output voltage from the diode 8 is applied as a gate voltage of the NMOS transistor 6 having a threshold voltage larger than the output voltage. When the environment temperature is lower than the preset temperature, in order to compensate for reduction of a current caused to flow through the diode 8, the voltage developed at the point A is increased, and the NMOS transistor 6 is turned ON to become a conduction state. As a result, a current is caused to flow through the resistor 5. Because the voltage is mainly applied across the resistor 5, a voltage developed at a point B of FIG. 1B approaches a lower power source voltage Vss. In addition, when the voltage developed at the point B of FIG. 1B is reduced to fall below the threshold value of the PMOS transistor 4, the PMOS transistor 4 is also turned ON to become a conduction state. Therefore, the current is caused to flow through the resistor 3 to generate the heat therefrom. If the above-mentioned state of the reference voltage generator is referred to as an ON state, then, when the environment temperature is higher than the preset temperature, both the NMOS transistor 6 and the PMOS transistor 4 become an OFF state by the reverse operation. As a result, no current is caused to flow through the resistor 3 in the circuit of the reference voltage generator.
(11) The ambient temperature of the D type NMOS transistor 1 and the E type NMOS transistor 2, which serve to generate the reference voltage, is controlled by the heat generating circuit for generating the heat in the resistor 3 described above when the ambient temperature is lower than the preset temperature. In this way, after a lapse of given time, the change in temperature can be kept approximately in the predetermined range. Hence, as shown in FIG. 2, the reference voltage generator according to the embodiment of the present invention is capable of obtaining an approximately constant output voltage even when the time has lapsed.
