DISTANCE MEASURING DEVICE, IN PARTICULAR FOR DIELECTRIC AND METALLIC TARGET OBJECTS

Abstract

Disclosed is a distance measuring device, in particular for dielectric or metallic target objects, said device comprising a sensor with a resonance chamber and a resonance structure. The resonance structure has an element consisting of a dielectric material which has a narrowing at the edge, the resonance frequency of the resonance chamber being dependent on the distance between the element and a target object.

Claims

1-26. (canceled)

27. A distance measuring device, comprising: a sensor having a resonance chamber and a resonance structure, wherein the resonance structure has an element comprising a dielectric material, wherein the dielectric material comprises a narrowing at an edge of the dielectric material, and wherein a resonance frequency of the resonance chamber is dependent on a distance between the element and a target object.

28. The device according to claim 27, wherein the narrowing of the dielectric material is circumferential and rotationally symmetrical.

29. The device according to claim 27, wherein the narrowing of the dielectric material defines a recess or a groove.

30. The device according to claim 27, wherein the element is cylindrical in form.

31. The device according to claim 27, wherein the narrowing of the dielectric material has a rectangular cross-section.

32. The device according to claim 27, wherein the narrowing of the dielectric material has a smaller cross-sectional area than an interior portion of the dielectric material.

33. The device according to claim 27, wherein the narrowing of the dielectric material has a height of 5% to 25% of a height of the element.

34. The device according to claim 27, wherein the narrowing of the dielectric material has a height of 10% to 20% of a height of the element.

35. The device according to claim 27, wherein the narrowing of the dielectric material has a height of approximately 15% of a height of the element.

36. The device according to claim 27, wherein the narrowing of the dielectric material has a height of 0.2 mm to 1.0 mm.

37. The device according to claim 27, wherein the narrowing of the dielectric material has a height of 0.5 mm to 0.7 mm.

38. The device according to claim 27, wherein the narrowing of the dielectric material has a height of approximately 0.6 mm.

39. The device according to claim 27, wherein the narrowing of the dielectric material has a depth of 5% to 25% of a width of the element.

40. The device according to claim 27, wherein the narrowing of the dielectric material has a depth of 10% to 20% of a width of the element.

41. The device according to claim 27, wherein the narrowing of the dielectric material has a depth of approximately 15% of a width of the element.

42. The device according to claim 27, wherein the narrowing of the dielectric material has a depth of 1.0 mm to 3.8 mm.

43. The device according to claim 27, wherein the narrowing of the dielectric material has a depth of 1.6 mm to 3.2 mm.

44. The device according to claim 27, wherein the narrowing of the dielectric material has a depth of approximately 2.4 mm.

45. The device according to claim 27, wherein the narrowing of the dielectric material is positioned in an upper third of the element.

46. The device according to claim 27, wherein a lower region of the element is at least partially metallized.

47. The device according to claim 27, further comprising a injection moulded plastic positioned around an outer and/or an upper region of the element.

48. The device according to claim 27, further comprising a sleeve, wherein the resonance structure of the sensor is at least partially disposed within the sleeve, and wherein the element is positioned within the sleeve such that an upper region of the element is located partially above the sleeve.

49. The device according to claim 27, further comprising a signal generator configured to generate a frequency-modulated signal, wherein the device is configured to couple the signal into the resonance structure at a first point on the resonance structure, and decouple the signal from the resonance structure at a second point of the resonance structure with the given resonance.

50. The device according to claim 49, further comprising at least one of: a mixer configured to mix the signal decoupled from the resonance structure into a baseband, an amplifier configured to amplify the signal decoupled from the resonance structure, a filter configured to filter the signal decoupled from the resonance structure, or an analog to digital converter configured to convert the signal decoupled from the resonance structure from an analog signal to a digital signal.

51. The device according to claim 27, further comprising: an oscillator configured generate a signal coupled into the resonance structure and a local oscillator signal, and a mixer configured to receive a signal decoupled from the resonance structure and the local oscillator signal.

52. The device according to claim 27, wherein the resonance structure is configured to be excited electrically and/or magnetically.

53. The device according to claim 27, wherein the resonance structure is geometrically arranged such that a mode is formed in the resonance structure, wherein the mode is at least predominantly in the form of an H111 mode, a TE011 mode, and/or a TE111 mode.

54. The device according to claim 53, wherein the mode includes one or more distinct portions.

55. The device according to claim 27, wherein the narrowing of the dielectric material reduces circuit shorting compared to an interior portion of the element.

56. The device according to claim 27, wherein the resonator comprises at least two coupling points, and wherein the sensor has rotationally symmetrical sensor properties.

57. The device according to claim 56, wherein the at least two resonator coupling points are offset geometrically by 90°.

58. The device according to claim 56, wherein the device is configured to feed signals with a phase difference of 90° into the at least two resonator coupling points to produce a circulating mode in the resonance structure.

59. A method for measuring a distance, comprising: providing a sensor comprising a resonance chamber and a resonance structure, wherein the resonance structure has an element comprising a dielectric material, wherein the dielectric material comprises a narrowing at an edge of the dielectric material, and wherein a resonance frequency of the resonance chamber is dependent on a distance between the element and a target object.

60. The method according to claim 59, further comprising: feeding a signal into the resonance structure at a first point of the resonance structure, and decoupling the signal at a second point of the resonance restructure with a given resonance.

61. The method according to claim 59, wherein the resonance structure geometrically arranged such that a mode is formed in the resonance structure, wherein the mode is at least predominantly in the form of an H111, a TE011, and/or a TE111 mode.

62. The method according to claim 59, wherein the sensor has a rotationally symmetrical sensor property.

63. The method according to claim 62, further comprising feeding signals with a phase difference into at least two resonator coupling points to produce a circulating mode in the resonance structure.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0035] FIG. 1 shows a block diagram of an exemplary embodiment of a distance measuring device according to the invention;

[0036] FIG. 2 shows a sectional view of an embodiment of a resonator structure that can be used in the distance measuring device or distance measurement according to the invention;

[0037] FIG. 3 shows mode portions in the resonator structure according to FIG. 2;

[0038] FIG. 4 shows a block diagram of an exemplary embodiment of a distance measuring device according to the invention working with circular mode;

[0039] FIG. 5 shows a simplified illustration of the circular or circulating mode;

[0040] FIG. 6 shows a frequency response of the resonance frequency over the target distance; and

[0041] FIGS. 7 to 23 show simulation structures and results as well as frequency curves and field profiles in exemplary embodiments of the distance measuring device according to the invention.

DETAILED DESCRIPTION

[0042] In one, a number of or all of the exemplary embodiments according to FIG. 1 the principle of the sensor consists of determining the frequency of a resonance chamber that is defined by a resonance structure located within the sensor and a target that is a specific distance away from the sensor that is to be recorded, which distance is also called the target distance in the following.

[0043] The target distance can be determined on the basis of the dependency of the resonance frequency upon the target distance. In this connection the resonance structure can be coupled to or be acted on by a frequency-modulated signal, and at another point of the resonance structure, with a given resonance, a signal can be decoupled. The decoupled signal can then be mixed down into the baseband, can be amplified, filtered and/or be converted from analogue to digital.

[0044] As shown in FIG. 1, in the exemplary embodiment shown a control/evaluation device 1, e.g. in the form of an electronic circuit, is provided that applies a control signal, e.g. in the form of tuning voltage, to a voltage-controlled oscillator, VCO, 3 via a line 2. The frequency-modulated signal emitted by the VCO 3 is applied via a line 4 to an input connection 5′ of a resonance structure 5 as an excitation signal.

[0045] A output signal is taken from the resonance structure 5 at another connection 5″, which output signal is applied via a line 6 to a mixer 7 to which the signal occurring on the line 4 and fed into the resonance structure 5 is fed via a second input 8 as a local oscillator signal.

[0046] In one, a number of or all of the exemplary embodiments the output signal of the mixer 7 is conveyed via an amplifier 9, a low-pass filter 10 and/or an analogue to digital converter 11 and is then fed via an input into the control and evaluation device 1.

[0047] In many exemplary embodiments the local oscillator signal (LO signal) applied to the input 8 of the mixer 7 can be generated by an oscillator other than the VCO 3, but in the exemplary embodiment according to FIG. 1 and other exemplary embodiments is generated by the same oscillator 3 as the coupling signal at the input 5. This mixing principle makes amplitude sensitivity possible here and prevents ambiguities in resonance frequencies and couplings due to structurally identical sensors that are positioned opposite one another.

[0048] In one, a number of or all of the exemplary embodiments the sensor can have the following structure. The sensor has a resonance structure 5 that corresponds to the illustration of FIG. 2, the dimensions relating here to typical dimensions of a sensor of M18 size (metric ISO thread as the thread size for a screw-in sensor), and can be modified or varied as one wishes according to the requirement and size. In the exemplary embodiment that is illustrated, the sensor is made in the form of a round disc with a thickness of approx. 4.2 mm and a diameter of 18 mm.

[0049] In the exemplary embodiment that is illustrated the resonance structure 5 consists mainly of an element 14 made of dielectric material that is optionally cylindrical in form, a target object 20 and an air area 19 between the two objects 14, 20. With this arrangement high resonance frequencies can be achieved with small geometric ratios.

[0050] In one, a number of or all of the exemplary embodiments the dielectric material of the element 14 has a narrowing 18, for example a circumferential narrowing at the edge and/or that is rotationally symmetrical, in the form of an indentation or a recess such as for example a groove at the side edge. The lower region of the element 14 can be predominantly or entirely metallised, i.e. it can have metallisation 15. Optionally, the lower side surfaces of the element 14 and/or the boundary surfaces of the narrowing 18, i.e. the surfaces running parallel to the lower side of the sensor 5 and the inner edge side of the recess 18 running at right angles to the latter, can also be predominantly or entirely metallised, i.e. have the metallisation 15. The element 14 can be surrounded by a plastic 16, such as for example a resin, e.g. this can be injection moulded around it, which plastic covers not only all of the side regions of the element including the inside of the recess 18, but also covers the upper side of the element 14 with a smaller layer thickness.

[0051] In the lower region the element 14 is surrounded by a sensor sleeve 17 and is located in the upper region, partially above the sensor sleeve 17. The height of the sensor sleeve can e.g. be one to two thirds of the element height, but optionally ends below the recess 18 and can, for example, be approximately half the height of the element 14.

[0052] In one, a number of or all of the exemplary embodiments the narrowing 18 can have a rectangular cross-section, the narrowing being able to have a height of 5 to 25% or 10 to 20% or approximately 15% of the element height, or be e.g. 0.2 to 1.0 mm, or optionally 0.5 to 0.7 mm, or approximately 0.6 mm high.

[0053] Furthermore, the narrowing 18 can have a depth of 5 to 25% or 10 to 20% or approximately 15% of the element width, or be e.g. 1.0 to 3.8 mm, or optionally 1.6 to 3.2 mm or approximately 2.4 mm deep.

[0054] In the exemplary embodiment that is illustrated the narrowing 18 is formed on the outer edge and is positioned e.g. in the upper half or in the upper third of the element 14.

[0055] The resonance structure 5 is electrically or magnetically excited and is designed geometrically such that, in accordance with FIG. 3, a mode is formed in the resonance structure 5 that can predominantly be in the form of a TE111 mode. In addition, the mode has a portion the form of which is distinct like a TM mode. At the z position of the groove (i.e. the upper horizontal boundary surface of the recess 18 according to the illustration in the drawings) the electric field in the resonator 5 forms its strongest field amount-wise. At the same time the wall currents form mainly at the edge of the element 14, i.e. of the dielectric material on the inside of the groove or recess 18. In this way disruptive wall currents on the sensor surface are prevented. Outwardly, towards the sensor edge, the recess 18 (groove) acts like a throttle and transforms short circuit properties into idling properties that minimise field portions around the sensor head. These are additionally reduced by the E mode-type portions forming beneath the recess 18.

[0056] In one, a number of or all of the exemplary embodiments rotationally symmetrical sensor properties can be achieved by circulating the mode described above. For this purpose, in accordance with FIG. 4, at least two resonator coupling points 22, 23 are provided that are geometrically offset by 90° and the signals of which are fed in with the same amplitude, but with a phase difference of 90°. FIG. 4 shows a bottom view of the element 14, i.e. in the z direction, as indicated by the coordinate arrows. The frequency-modulated signal 24 generated by the VCO 3 is applied directly to the first coupling point 22 and to a 90° phase shifter 25 the output signal of which, displaced by 90°, is applied to the second coupling point 23.

[0057] According to FIG. 5 a right- or left-circular mode 26 is thus formed. FIG. 5 shows a top view onto the element 14.

[0058] FIG. 6 shows, as an example for the arrangement according to FIG. 2, a frequency curve 28 that illustrates the change of the resonance frequency upon changing the target distance of a metallic target 20. A particular feature of the curve 28 is a relatively linear constant frequency change over the target distance. This is determined by the mode that is used and that mainly consists of E mode-type portions and of H111 mode-type portions. The latter portions are more distinct and are crucial for the resonance frequency change over the target distance and, due to the field structure and the relatively low resonance frequency, are particularly suitable for measurements, even with large distances.

[0059] In FIG. 6 the target distance in mm is plotted on the axis of abscissas, and the frequency in GHz is plotted on the axis of ordinates.

[0060] As can be seen from FIG. 6, distance measurements for the sensor size M18 can be reliably taken over a very wide range here of less than 1 mm to more than 20 mm.

[0061] Another advantage of the sensor is the distance measurement for dielectric targets. Field portions penetrate into the dielectric target here, and due to the higher field concentration in the target and the permittivity difference between air and the target a resonance frequency shift over the target distance results that differs from metallic targets. This effect depends on the permittivity value, the thickness and the high frequency properties of the material, and can be used for measuring distance or for determining material.

[0062] In one, a number of or all of the exemplary embodiments a or the resonance structure can be designed geometrically such that a mode forms in the resonance structure that is at least predominantly in the form of an H111 mode. A new type of generator or measuring principle with a very large range is created by the H111 mode. This generator or measuring principle can be used for a measuring device, e.g. a distance measuring device or for distance measurement, but also for other purposes. It is well known that H and E modes are the German designations, whereas TM and TE are the corresponding American designations, and so e.g. “H111=TE111” and “E110=TM110”.

[0063] FIGS. 7 to 23 show simulation structures and results for a resonance structure 5 in exemplary embodiments of the distance measuring device according to the invention, such as for example a ceramic resonator, e.g. in a dimmer 30, with resonance frequency, quality and switching distance, as well as frequency curves and field profiles.

[0064] FIG. 7 lists the simulation targets such as target frequency change, high quality, small wall currents, large mode clarity range and simple coupling.

[0065] FIG. 8 shows mode formers for H011 with E-field, electric energy density and surface current.

[0066] FIG. 9 shows the mode of operation with a reflective or transmitting target or without a target. The target is also to be understood to mean the target or target object here.

[0067] FIG. 10 illustrates the frequency and quality in the form of curves over the target distance.

[0068] FIG. 11 illustrates frequency changes in the form of curves over the target distance.

[0069] FIG. 12 relates to the change in permittivity in the form of frequency and quality curves over the target distance.

[0070] FIG. 13 shows the change in permittivity in the form of frequency change curves over the target distance.

[0071] FIG. 14 illustrates effects when the sensor diameter is reduced as regards the frequency curve and quality curves over the target distance.

[0072] FIG. 15 illustrates effects when the sensor diameter is reduced as regards frequency changes over the target distance.

[0073] FIG. 16 illustrates effects when the sensor diameter is increased as regards the frequency curve and quality curve (unloaded) over the target distance.

[0074] FIG. 17 illustrates effects when the sensor diameter is increased as regards frequency changes and modes.

[0075] FIG. 18 shows a simulation model with the target and resonance structure for the H111/E110 mode.

[0076] FIG. 19 shows a mode of operation in the form of the E-field image with the H111/E110 mode with the target and resonance structure.

[0077] FIG. 20 shows mode formers for H111/E110 with E-field, electric energy density and surface current.

[0078] FIG. 21 shows cross-sections of the E-field with target distance 5 mm as an example or without a target.

[0079] FIG. 22 illustrates a frequency curve and a quality curve (unloaded) over the target distance for the H111/E110 mode.

[0080] FIG. 23 illustrates frequency change curves over the target distance for the H111/E110 mode.

[0081] Since, moreover, these drawings can be understood in their own right and are suitable and are to be understood as independent disclosure, it is not necessary to provide a more detailed description of the latter.