FILM BULK ACOUSTIC RESONATOR CHIP AND PACKAGE STRUCTURE WITH IMPROVED POWER TOLERANCE

Abstract

A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance includes: a first substrate having a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and first bonding pads connected to the bottom electrodes or the top electrodes of the FBARs; and a second substrate having a plurality of vias passing therethrough, second bonding pads located on one end surface of the vias facing the first substrate, and external connection pads located on the other end surface of the vias which does not face the first substrate, wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads.

Claims

1. A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance, comprising: a first substrate having a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and first bonding pads connected to the bottom electrodes or the top electrodes of the FBARs; and a second substrate having a plurality of vias passing therethrough, second bonding pads located on one end surface of the vias facing the first substrate, and external connection pads located on the other end surface of the vias which does not face the first substrate, wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads, at least some of the bottom electrodes are connected to the first bonding pads through piezoelectric layer vias filled with a conductive material, and the vias on the second substrate comprise first vias connected to signal or ground wiring through the external connection pads and second vias with no connection to any signal or ground wiring.

2. The FBAR chip and package structure according to claim 1, wherein the first vias are filled with a conductive material, and the second vias are filled with a material having a higher thermal conductivity than the first vias.

3. The FBAR chip and package structure according to claim 2, wherein the first vias and the second vias are filled with the same material.

4. The FBAR chip and package structure according to claim 2, wherein the first vias and the second vias are filled with different materials from each other.

5. The FBAR chip and package structure according to claim 1, wherein the first vias are connected to the piezoelectric layer vias.

6. The FBAR chip and package structure according to claim 1, wherein the diameters of the first vias and the second vias are different from each other.

7. The FBAR chip and package structure according to claim 6, wherein the diameters of the second vias are larger than the diameters of the first vias.

8. The FBAR chip and package structure according to claim 1, wherein the sectional shapes of the first vias and the second vias are different from each other.

9. The FBAR chip and package structure according to claim 1, wherein the first vias and the second vias are through silicon vias (TSVs).

10. The FBAR chip and package structure according to claim 1, wherein the external connection pads are formed on the first vias.

11. The FBAR chip and package structure according to claim 1, wherein if the external connection pads are formed on the second vias, the external connection pads are covered with passivation layers.

12. The FBAR chip and package structure according to claim 1, wherein at least two or more top or bottom electrodes of the plurality of FBARs are connected unitarily with one another by means of electrode connecting parts, and when viewed on top, the second vias are formed among the top or bottom electrodes connected unitarily with one another.

13. The FBAR chip and package structure according to claim 1, wherein the first substrate comprises a heat sink groove formed between the two or more bottom electrodes with no connection with the first bonding pads in such a manner as to be filled with a thermal dissipation material.

14. A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance, comprising: a first substrate having a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and first bonding pads connected to the bottom electrodes or the top electrodes of the FBARs; and a second substrate having a plurality of vias passing therethrough, second bonding pads located on one end surface of the vias facing the first substrate, and external connection pads located on the other end surface of the vias which does not face the first substrate, wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads, at least some of the bottom electrodes are connected to the first bonding pads through piezoelectric layer vias filled with a conductive material, and the first substrate comprises a heat sink groove formed between the two or more bottom electrodes with no connection with the first bonding pads in such a manner as to be filled with a thermal dissipation material.

15. The FBAR chip and package structure according to claim 14, wherein the first substrate comprises air cavities formed under the bottom electrodes, and at least a portion of the heat sink groove is formed between the air cavities.

16. The FBAR chip and package structure according to claim 14, wherein the two or more bottom electrodes are connected unitarily with one another by means of an electrode connecting part, and at least a portion of the heat sink groove is formed under the electrode connecting part.

17. The FBAR chip and package structure according to claim 16, wherein at least a portion of the heat sink groove is extended outward from the electrode connecting part.

18. The FBAR chip and package structure according to claim 17, wherein the area of the heat sink groove extended outward from the electrode connecting part is larger than the area laid under the electrode connecting part.

19. The FBAR chip and package structure according to claim 17, wherein the heat sink groove has the shape of T or the shape of ‘┐’ or ‘┌’ (which is half of T) made by removing one of the head portion of the shape of T.

20. The FBAR chip and package structure according to claim 19, wherein the head portion of the shape of T or the shape of half of T has a larger width than the other portion thereof.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The above and other objects, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention in conjunction with the accompanying drawings, in which:

[0039] FIG. 1 is a schematic diagram showing a filter structure according to the present invention in which a plurality of FBARs are connected in series and parallel to improve power tolerance;

[0040] FIG. 2 is a sectional view showing an FBAR chip and package structure with improved power tolerance according to a first embodiment of the present invention, wherein via type heat sinks are formed on a second substrate;

[0041] FIG. 3 is a top view showing the FBAR chip and package structure with improved power tolerance according to the first embodiment of the present invention, which is viewed on top of the second substrate;

[0042] FIG. 4 is a sectional view showing an FBAR chip and package structure with improved power tolerance according to a second embodiment of the present invention, wherein an air cavity type heat sink is formed on a first substrate;

[0043] FIG. 5 is a top view showing the FBAR chip and package structure with improved power tolerance according to the second embodiment of the present invention, which is viewed on top of the second substrate;

[0044] FIG. 6 is top and sectional views showing a structure including both of the first and second embodiments of the present invention and taken along the line A-A′, respectively;

[0045] FIG. 7 is a schematic diagram showing the package of FIG. 6;

[0046] FIG. 8 is a sectional view showing a conventional FBAR package; and

[0047] FIG. 9 is a schematic diagram showing a conventional filter structure for improving power tolerance.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0048] Now, an explanation on embodiments of the present invention will be given with reference to the attached drawings. Objects, characteristics and advantages of the present invention will be more clearly understood from the detailed description as will be described below and the attached drawings. Before the present invention is disclosed and described, it is to be understood that the disclosed embodiments are merely exemplary of the invention, which can be embodied in various forms. Therefore, specific structural and functional details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one of ordinary skill in the art to variously employ the present invention in virtually any appropriately detailed structure.

[0049] In the description, when it is said that a part “includes” other elements, the part must include other components regardless of other parts, and it does not exclude addition of other components.

[0050] In the description, further, when it is said that one element is described as being “connected” to the other element, one element may be “directly connected” to the other element, but it should be understood that one element may be “indirectly” or “electrically connected” to the other element, while another element or device being present between the two elements.

[0051] In the description, when it is said that a layer (film), area, pattern or structure is located “on” or “under” a substrate, layer (film), area, pad, or pattern, it means that one member may come into contact with another member as well as yet another member may exist between the two members. Top and underside of the layer will be explained with reference to drawings.

[0052] The terms such as the first and the second may be used to only to distinguish a plurality of components, and the components should not be restricted as in orders and other characteristics.

[0053] The steps illustrated in the drawings are only sequence illustratively suggested, but other additional steps may be provided or some steps may be omitted.

[0054] FIG. 1 is a schematic diagram showing a filter structure according to the present invention in which a plurality of FBARs are connected in series and parallel to improve power tolerance.

[0055] Referring to FIG. 1, power tolerance in the FBAR filter structure according to the present invention is improved to allow heat sinks to be located between neighboring resonators, in a state where the arrangements of the resonators in the conventional FBAR filter are still maintained, to thus dissipate internal heat more easily, while not enlarging the area of the filter through the increase in the number of resonators.

[0056] According to the present invention, two types of heat sinks are provided, and they will be explained one by one.

[0057] FIG. 2 is a sectional view showing an FBAR chip and package structure with improved power tolerance according to a first embodiment of the present invention, wherein via type heat sinks are formed on a second substrate.

[0058] Referring to FIG. 2, an FBAR chip and package structure according to a first embodiment of the present invention includes a first substrate 100 and a second substrate 200. The first substrate 100 and the second substrate 200 may be silicon substrates.

[0059] A plurality of FBARs each having a bottom electrode 111, a piezoelectric material 112, and a top electrode 113 are located on the first substrate 100, and first bonding pads 120 are further located to perform WLP bonding for the first substrate 100 and the second substrate 200.

[0060] At least some of the top electrodes 113 are connected to the first bonding pads 120, and at least some of the bottom electrodes 111 are connected to the first bonding pads 120 through piezoelectric layer vias 130 filled with a conductive material.

[0061] The FBARs further include air cavities 114 formed under the bottom electrodes 111.

[0062] The second substrate 200 includes a plurality of vias 210 passing therethrough. The vias include first vias 211 connected to signal or ground wiring and second vias 212 with no connection to any signal or ground wiring.

[0063] The first vias 211 and the second vias 212 may be through silicon vias (TSVs).

[0064] Further, second bonding pads 220 are located on one end of the respective vias 210 passing through the second substrate 200 which faces the first substrate 100.

[0065] The second bonding pads 220 are bonded to the first bonding pads 120 of the first substrate 100.

[0066] Also, external connection pads 230 are located on the other end of the respective vias 210 passing through the second substrate 200 which does not face the first substrate 100 in such a manner as to be connected to the signal or ground wiring.

[0067] The external connection pads 230 may be located on all of the vias 210 or only on the first vias 211. All portions except the external connection pads 230 located on the first vias 211 are covered with a passivation layer 240, and the passivation layer 240 may be a solder resistor (SR).

[0068] Package sealing dams 140 are located on the outer package between the first substrate 100 and the second substrate 200 so as to seal the package, and they are bonded to each other by means of the first bonding pads 120 and the second bonding pads 220.

[0069] Under the above-mentioned configuration, an external RF signal is inputted to the electrodes of the FBARs through the signal wiring connected to the external connection pads 230 to generate given resonant frequency and bulk acoustic wave, and the bulk acoustic wave is transmitted to the plurality of FBARs and is thus outputted to the outside through the external connection pad 230 connected to the output side.

[0070] It can be appreciated that the FBAR filter package structure according to the first embodiment of the present invention is different from the conventional FBAR filter package structure in that the second vias 212 are additionally formed.

[0071] In specific, the FBAR filter package structure according to the first embodiment of the present invention is configured to allow the heat generated between the resonators on the first substrate 100 to be easily dissipated to the outside through the second vias 212, thereby improving the power tolerance thereof.

[0072] The second vias 212 are additionally formed, but there is no need to add any new process for forming the second vias 212.

[0073] The first vias for signal input and output are formed in the conventional practice, and when the first vias are formed, accordingly, the second vias 212 according to the present invention are formed on given positions of the package, together with the first vias.

[0074] The second vias 212 only serve to dissipate the heat and do not take part in input and output of the signal.

[0075] FIG. 3 is a top view showing the FBAR chip and package structure with improved power tolerance according to the first embodiment of the present invention, which is viewed on top of the second substrate.

[0076] Referring to FIG. 3, each second via (via type heat sink) adopted in the first embodiment of the present invention is located at a center of a portion in which the top electrodes of the resonators are connected by means of an electrode connecting part 115. The electrode connecting part 115 is made of the same material as the electrodes to connect the electrodes to one another and is formed unitarily with the electrodes in a process of forming the electrodes. The electrode connecting parts 115 connect the top electrodes or bottom electrodes located on the same layer as each other to one another.

[0077] The second vias may have various shapes according to arrangements or needs of the resonators, and in FIG. 3, the second vias 212 have rectangular or circular sectional shapes.

[0078] Further, the sizes of the second vias 212 are equal to or smaller than those of the first vias 211, but if the second vias 212 have a larger diameter than the first vias 211, high heat dissipation efficiency can be obtained.

[0079] The via type heat sinks adopted in the first embodiment of the present invention are located among the plurality of FBARs, and under the configuration of FIG. 3, each via type heat sink is located among the neighboring three resonators to allow the heat generated from the three electrodes to be quickly dissipated to the outside of the package therethrough,

[0080] Even if the via type heat sinks are located among the three top electrodes connected by means of the electrode connecting parts 115, as shown in FIG. 3, they may be of course located among the bottom electrodes (three bottom electrodes connected to one another on the center of FIG. 3) connected by means of the electrode connecting parts 115. In this case, the via type heat sinks may be connected to the bottom electrodes through the piezoelectric layer vias 130 of the first substrate 100.

[0081] The second vias 212 are filled with one selected from copper (Cu), molybdenum (Mo), aluminum (Al), aluminum-copper alloy (Al_Cu), gold (Au), and tungsten (W), and they may be filled with higher thermal conductivity than the first vias 211. However, the second vias 212 are filled with the same material as the filled material of the first vias 211 so as to achieve efficiency in process.

[0082] FIG. 4 is a sectional view showing an FBAR chip and package structure with improved power tolerance according to a second embodiment of the present invention, wherein an air cavity type heat sink is formed on a first substrate.

[0083] Referring to FIG. 4, a heat sink adopted in the second embodiment of the present invention is configured to have an air cavity type heat sink groove 150 filled with a thermal dissipation material 160.

[0084] The heat sink groove 150 is additionally formed between a plurality of air cavities 114 when the air cavities are formed under the bottom electrodes in the process of forming the FBARs.

[0085] Accordingly, since the heat sink groove 150 is formed together with the air cavities 114, there is no need to add a separate process of forming the heat sink groove 150, so that even in the FBAR package with a new chip structure, no inefficiency in process occurs.

[0086] The heat sink groove 150 is filled with the thermal dissipation material 160 with high thermal conductivity, thereby improving the thermal dissipation performance.

[0087] The thermal dissipation material 160 filled in the heat sink groove 150 is one selected from copper (Cu), molybdenum (Mo), aluminum (Al), aluminum-copper alloy (Al_Cu), gold (Au), and tungsten (W), and the heat sink groove 150 may be filled with higher thermal conductivity than the bottom electrode. However, the heat sink groove 150 is filled with the same material as the bottom electrode so as to achieve efficiency in process.

[0088] FIG. 5 is a top view showing the FBAR chip and package structure with improved power tolerance according to the second embodiment of the present invention, which is viewed on top of the second substrate.

[0089] Referring to FIG. 5, the T-shaped heat sink groove 150 filled with the thermal dissipation material is formed under an electrode connecting part through which the neighboring three bottom electrodes of the first substrate are connected unitarily with one another.

[0090] The heat sink groove 150 includes a first area 151 that is a lower portion of the T-shaped area thereof in such a manner as to be partially laid on the electrode connecting part for the three bottom electrodes and a second area 152 that is a head portion of the T-shaped area thereof

[0091] A portion of the heat sink groove 150 is laid on the electrode connecting part, and the other portion is extended outward from the electrode connecting part in such a manner as to be larger than the portion laid on the electrode connecting part.

[0092] The size or shape of the heat sink groove 150 may be freely formed according to the arrangements of the resonators or the allowable size of the package, and if the second area 152 as the head portion of the T-shaped heat sink groove 150 has a larger width than the first area thereof, as shown in FIG. 5, the thermal dissipation efficiency can be more improved.

[0093] Further, the heat sink groove 150 has the shape of T, as shown in FIG. 5, but of course, it may have the shape of ‘┐’ or ‘┌’ (which is half of T) made by removing one of the head portion of the shape of T.

[0094] On the other hand, the air cavity type heat sink adopted in the second embodiment of the present invention is formed together with the via type heat sinks adopted in the first embodiment of the present invention, thereby providing combined heat sinks.

[0095] FIG. 6 is top and sectional views showing a package structure including both of the first and second embodiments of the present invention and taken along the line A-A′ of the top view.

[0096] FIG. 6 shows the sectional view in which the positions of the first substrate 100 and the second substrate 200 are changed up and down like in the case where the FBAR package is really mounted on a main substrate.

[0097] FIG. 7 is a schematic diagram showing the package of FIG. 6.

[0098] As shown in FIGS. 6 and 7, of course, the package structure including the two kinds of heat sinks according to the first and second embodiments of the present invention can have better thermal dissipation performance than the package structure only with one kind of heat sink.

[0099] As described above, the FBAR chip and package structure according to the present invention can have more improved power tolerance than the conventional FBAR chip and package structure.

[0100] In addition, the FBAR chip and package structure according to the present invention can satisfy both of improved power tolerance and package miniaturization.

[0101] Further, the FBAR chip and package structure according to the present invention can efficiently utilize the existing FBAR chip structure in a manufacturing process.

[0102] Furthermore, the FBAR chip and package structure according to the present invention can still utilize the existing FBAR manufacturing procedure and equipment in a manufacturing process.

[0103] Accordingly, the FBAR chip and package structure according to the present invention can form the heat sinks with various shapes through the existing process, while not increasing the number of FBARs like the conventional practice, thereby improving the power tolerance.

[0104] The preferred embodiments of the present invention have been disclosed in the specification and drawings. In the description of the present invention, special terms are used not to limit the present invention and the scope of the present invention as defined in claims, but just to explain the present invention.

[0105] Thus, although the invention has been described with respect to specific embodiments, it will be appreciated that the invention is intended to cover all modifications and equivalents within the scope of the following claims.