RADIATION EMITTER

Abstract

A method of fabricating a radiation emitter including fabricating a layer stack that includes a first reflector, at least one intermediate layer, an active region and a second reflector; locally oxidizing the intermediate layer and thereby forming at least one unoxidized aperture; and locally removing the layer stack, and thereby forming a mesa that includes the first reflector, the unoxidized aperture, the active region, and the second reflector. Before or after locally removing the layer stack and forming the mesa: forming at least a first unoxidized aperture and at least a second unoxidized aperture inside the intermediate layer; etching a trench inside the layer stack, the trench defining a first portion and a second portion of the mesa, wherein the trench severs the intermediate layer(s) so that the first aperture is located in the first portion and the second aperture is located in the second portion of the mesa.

Claims

1. Method of fabricating a radiation emitter (100) comprising the steps of fabricating a layer stack (10) that comprises a first reflector (12), at least one intermediate layer (21-24), an active region (13), and a second reflector (14); locally oxidizing the at least one intermediate layer (21-24) and thereby forming at least one unoxidized aperture (40) in the at least one intermediate layer (21-24); and locally removing the layer stack (10), and thereby forming a mesa (M), wherein the mesa (M) comprises the first reflector (12), the at least one unoxidized aperture (40), the active region (13), and the second reflector (14); characterized in that before or after locally removing the layer stack (10) and forming the mesa (M) the following steps are carried out: forming at least a first unoxidized aperture (40) and at least a second unoxidized aperture (40) inside the intermediate layer (21-24); etching a trench (TR) inside the layer stack (10), said trench (TR) defining at least a first portion (M1) of the mesa (M) and at least a second portion (M2) of the mesa (M), wherein the trench (TR) severs the intermediate layer (21-24) and separates the apertures (40) such that the first aperture (40) is located in the first portion (M1) of the mesa (M) and the second aperture (40) is located in the second portion (M1) of the mesa (M); and fabricating an individual electrical contact (61A, 61B) for each of the portions (M1, M2).

2. Method of claim 1 wherein the step of forming the at least two apertures (40) inside the intermediate layer (21-24) comprises: vertically etching blind holes (30) inside the layer stack (10), wherein the blind holes (30) vertically extend at least to the intermediate layer (21-24) and expose the intermediate layer (21-24); and oxidizing sections of the intermediate layer (21-24) via the blind holes (30) and thereby forming said apertures (40) inside the intermediate layer (21-24).

3. Method of claim 2 wherein said oxidizing of the intermediate layer (21-24) is carried out via the sidewalls (31) of the blind holes (30) in lateral direction, wherein from each hole (30) an oxidation front (32) radially moves outwards and wherein the etching is terminated before the entire intermediate layer (21-24) is oxidized, thereby forming said apertures (40) that are each limited by at least three oxidation fronts.

4. Method according to claim 1 wherein at least one of the apertures (40) has a rhombus-like shape where each side is formed by a circular or elliptical arc.

5. Method according to claim 1 wherein at least one of the apertures (40) has a triangle-like shape where each side is formed by a circular or elliptical arc.

6. Method according to claim 1 wherein the first aperture (40) is elongated along a first direction (A1); wherein the second aperture (40) is elongated along a second direction (A2); and wherein the first and second direction (A1, A2) are angled relative to each other.

7. Method according to claim 6 wherein the longitudinal axis of the first aperture (40) is oriented perpendicular to the longitudinal axis of the second aperture (40).

8. Method according to claim 6 wherein the longitudinal axis of the first aperture (40) has a 60°-angle with respect to the longitudinal axis of the second aperture (40).

9. Method according to claim 1 wherein in each portion (M1) of the mesa (M) at least two apertures (40) are fabricated which have the same orientation.

10. Method according to claim 1 wherein the apertures (40) in the first portion (M1) of the mesa (M) are oriented along the same first direction (A1); and wherein the apertures (40) in the second portion (M2) of the mesa (M) are oriented along the same second direction (A2) which differs from the first direction (A1).

11. Method according to claim 1 wherein said trench (TR) defines a third portion (M3) of the mesa (M) in addition to said first and second portion (M1, M2), wherein the apertures (40) in the first portion (M1) are oriented along the same first direction (A1); wherein the apertures (40) in the second portion (M2) are oriented along the same second direction (A2); wherein the apertures (40) in the third portion (M3) are oriented along the same third direction (A3); and wherein the first, second and third directions differ.

12. Method according to claim 1 wherein the first portion (M1) of the mesa (M) is provided with a first optical damping tuning layer (200) that is fabricated on top of the layer stack (10); wherein the second portion (M1) of the mesa (M) is provided with a second optical damping tuning layer (210) that is fabricated on top of the layer stack (10); and wherein the characteristics of the first optical damping layer differs from the characteristics of the second optical damping layer.

13. Method according to claim 1 wherein the layer stack (10) comprises two or more intermediate layers (21-24); wherein at least one of the intermediate layers (21-24) is formed inside the first reflector or between the first reflector and the active region (13) and wherein at least one of the intermediate layers (21-24) is formed inside the second reflector or between the second reflector and the active region (13).

14. Radiation emitter (100) comprising a layer stack (10) having a first reflector (12), at least one aperture (40) formed by unoxidized material of an intermediate layer (21-24) that is partly oxidized and partly unoxidized. an active region (13), and a second reflector (14); wherein a mesa (M) of the emitter (100) includes at least the first reflector (12), the unoxidized aperture (40), the active region (13), and the second reflector (14), characterized in that the mesa (M) comprises at least two portions (M1, M2) which are separated by a trench (TR) and each comprise at least one aperture (40) inside the intermediate layer (21-24); and each of the portions (M1, M2) is electrically contacted by an individual electrical contact.

15. Radiation emitter (100) of claim 14 wherein the emitter (100) comprises a fiber (MMF) and the mesa (M) including all apertures (40) of the mesa (M) is optically coupled to said same fiber (MMF).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order that the manner, in which the above-recited and other advantages of the invention are obtained, will be readily understood, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments thereof, which are illustrated in the appended figures. Understanding that these figures depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope, the invention will be described and explained with additional specificity and detail by the use of the accompanying drawings in which

[0028] FIGS. 1-16 illustrate method steps for fabricating an exemplary embodiment of a radiation emitter, in the form of a VCSEL, according to the present invention,

[0029] FIGS. 17-18 illustrate a second exemplary embodiment of a radiation emitter according to the present invention,

[0030] FIGS. 19—illustrate EDR (energy to data ratio) values versus bit-rate for different damping layers,

[0031] FIGS. 20-21 illustrate a third and fourth exemplary embodiment of a radiation emitter according to the present invention, and

[0032] FIGS. 22-25 illustrate method steps for fabricating elongated apertures with orthogonal orientation.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0033] The preferred embodiments of the present invention will be best understood by reference to the drawings, wherein identical or comparable parts are designated by the same reference signs throughout.

[0034] It will be readily understood that the parameters of the embodiments of the present invention, as generally described herein, could vary in a wide range. Thus, the following more detailed description of exemplary embodiments of the present invention, is not intended to limit the scope of the invention but is merely representative of presently preferred embodiments of the invention.

[0035] FIGS. 1-16 show method steps for fabricating an exemplary embodiment of a multiple radiation emitter in the form of a VCSEL 100 (see FIG. 16). The VCSEL 100 of FIG. 16 comprises two mesa portions M1 and M2 that can be individually controlled via individual top contacts 61A and 61B.

[0036] Each of the mesa portions M1 and M2 comprises one or a plurality of VCSEL subunits that are each defined by a stack 40a of vertically aligned apertures 40. Each stack 40a of vertically aligned apertures 40 can generate radiation on its own, however the radiation generated by the stacks 40a is preferably different in each mesa portion M1 and M2 such that each mesa portion M1 and M2 generates a set of own EDR upon transfer of different data rates and/or can show individual optical characteristics, for instance in terms of polarization and field distribution.

[0037] Since each of the mesa portions M1 and M2 can be individually controlled, the radiation P1 generated by the stacks 40a of vertically aligned apertures 40 in the mesa portion M1 may differ from the radiation P2 generated by the stacks 40a of vertically aligned apertures 40 in the mesa portion M2.

[0038] FIGS. 1 and 2 show a top view and a cross-section of an exemplary layer stack 10. The layer stack comprises a first (bottom) contact layer 11, a first reflector 12, two intermediate layers 21 and 22, hereinafter referred two as first lower intermediate layer 21 and second lower intermediate layer 22, an active region 13, two intermediate layers 23 and 24, hereinafter referred to as first upper intermediate layer 23 and second upper intermediate layer 24, a second reflector 14, and a second (top) contact layer 15. The four intermediate layers 21-24 consist of oxidizable material which is still unoxidized in FIGS. 1 and 2.

[0039] The first contact layer 11 is preferably highly p-doped (doping level >10.sup.19 cm.sup.−3). The second contact layer 15 is preferably highly n-doped (doping level >10.sup.19 cm.sup.−3).

[0040] The first and second reflectors 12 and 14 may be distributed Bragg reflectors (DBRs) that each comprise a plurality of reflector layers with alternating reflective indices.

[0041] The layer stack 10 is preferably fabricated by depositing semiconductor material layers such as AlGaAs, of varying composition, on a substrate 10a.

[0042] In the exemplary embodiment of FIG. 2, two intermediate layers 21-22 are located below the active region 13 and two intermediate layers 23-24 are located above the active region 13. Alternatively, the layer stack 10 may comprise less or more intermediate layers that are oxidizable. In a minimal configuration, a single intermediate layer is sufficient. However, to provide a high current density in the active region 13, at least one intermediate layer above and at least one intermediate layer below the active region 15 is advantageous.

[0043] FIGS. 3a and b and 4 show a top view and a cross-section of the layer stack 10 of FIGS. 1 and 2 after vertically etching 6, respectively 9 blind holes 30 inside the layer stack 10. The blind holes 30 vertically protrude to the oxidizable intermediate layers 21-24 and expose the intermediate layers 21-24.

[0044] In the exemplary embodiment of FIG. 3, the blind holes 30 are arranged in a lattice-like way forming a grid having a first grid spacing d1 in a first direction D1 and a second grid spacing d2 in a second different direction D2.

[0045] In one preferred embodiment, the first grid spacing d1 and the second grid spacing d2 are identical. In another preferred embodiment, the first grid spacing d1 is between 10% and 30% larger than the second grid spacing d2. Furthermore, the first and second direction D1, D2 can be perpendicular. Alternatively, the first and second direction D1, D2 can be angled, preferably with an angle between 60° and 85°. The grid spacing and/or directions may be optimized to achieve a desired shape (e.g. elongated) shape of the resulting apertures 40 (see FIG. 5).

[0046] Further, the holes 30 may be arranged such that the resulting apertures 40 are elongated in predefined directions, with the same orientation for each aperture or varying orientations. Such arrangements of blind holes 30 will be explained further below in connection with FIGS. 22-25.

[0047] FIGS. 5 and 6 show the layer stack 10 of FIGS. 3b and 4 after oxidizing the oxidizable intermediate layers 21-24 via the sidewalls 31 of the blind holes 30 in lateral direction. From each blind hole 30, an oxidation front radially (in lateral direction) moves outwards during the oxidation. The step of etching is terminated before the entire intermediate layers 21-24 are oxidized to form unoxidized apertures 40. Each unoxidized aperture 40 is preferably limited by at least three oxidation fronts of oxidized layer material 20. In the exemplary embodiment of FIG. 5, each unoxidized aperture 40 is limited by four oxidation fronts 32 of oxidized layer material 20 and therefore has a diamond-like shape.

[0048] The unoxidized apertures 40 are vertically aligned and form aperture stacks 40a (see FIG. 16) of vertically aligned apertures. Since the layer stack 10 comprises four intermediate layers 21-24, each aperture stack comprises four vertically aligned apertures 40. Each aperture stack 40a of vertically aligned apertures 40 forms a VCSEL subunit inside the VSEL 100 of FIG. 16.

[0049] The oxidized layer material 20 is preferably electrically isolating.

[0050] In FIG. 5, line VI-VI designates the cross-section shown in FIG. 6. Line T-T designates the position of a trench TR (see FIGS. 15 and 16) that will be fabricated at a later stage.

[0051] FIGS. 7 and 8 show the layer stack 10 of FIG. 6 after depositing an intermediate isolating layer 50 on the sidewalls of the blind holes 30. The sidewalls of all the blind holes 30 may be covered as shown in FIGS. 7 and 8. Alternatively, those blind holes that are located on line T-T in FIG. 5 may be excluded from deposition because they are located in the vicinity of the future trench TR mentioned above.

[0052] FIGS. 9 and 10 show the layer stack 10 of FIG. 8 after depositing a first conducting material 61 on the top contact layer 15. The first conducting material 61 covers sections of the top contact layer 15 and forms two separated top contacts 61A and 61B. The top contacts 61A and 61B are separated along the line T-T in FIGS. 5 and 9.

[0053] Sections 15a of the top contact layer 15 above the apertures 40 are preferably left uncovered to allow the optical radiation P1 and P2 (see FIG. 16) to exit the radiation emitter 100 without additional attenuation. In other words, the two separate top contacts 61A and 61B preferably provide openings for outgoing radiation. The openings are preferably each aligned with the allocated apertures 40 located below. In other words, the apertures below each opening are preferably aligned with respect to the opening as well as to one another in order to form a stack 40a of aligned apertures 40 that is aligned to the allocated opening (see FIG. 16).

[0054] In addition to its electrical influence, the first conducting material 61 preferably also forms a heat sink that dissipates heat from the inside of the blind holes during the operation of the resulting radiation emitter 100. To this end, the first conducting material 61 preferably also fills the blind holes 30 that are not located in the vicinity of line T-T in FIGS. 5 and 9. The first conducting material 61 is therefore preferably not just electrically but also thermally well conductive. The conducting material 61 is preferably Gold, Platinum, Titanium, Nickel, Gold-Germanium alloy or a sequence of these materials, depending on the doping type of the semiconductor material that is to be contacted. FIGS. 11 and 12 show the layer stack 10 of FIGS. 9 and 10 after etching a mesa M inside the layer stack 10. The mesa M may have one or more steps SS. The mesa M preferably extends to the bottom contact layer 11 to allow depositing a second conductive material 62, see FIG. 14, and thereby contacting the bottom contact layer 11.

[0055] FIGS. 13 and 14 show the layer stack 10 of FIGS. 11 and 12 after depositing the second conductive material 62 and contacting the bottom contact layer 11.

[0056] FIGS. 15 and 16 show the layer stack 10 of FIGS. 13 and 14 after etching above mentioned trench TR inside the layer stack 10 along the line T-T. The trench TR defines a first portion M1 of the mesa M and a second portion M2 of the mesa M. The trench TR severs all the intermediate layers 21-24 such that the apertures 40 are either located below the openings of the first contact 61A or the openings of the second contact 61B.

[0057] The trench may be filled with an electrically isolating material having preferably large thermal conductivity and a low dielectric constant (refractive index <2.2).

[0058] The layer stack 10 of FIGS. 15 and 16 provide a radiation emitter that comprises two laser sections that are each defined by the respective mesa portion M1 or M1. The mesa portions M1 and M2 can be individually controlled.

[0059] When applying an electrical voltage between the first and second conducting material 61 and 62 via top contacts 61A and/or 61B, electrical current will flow through the apertures 40 of all oxidizable layers 21-24 in the respective mesa portion M1 and/or M2. The active region 13 generates optical radiation that exits the radiation emitter 100 through the surface sections 15a of the top conducting layer 15 that are uncovered by the first conductive material 61.

[0060] In each of the mesa portions M1 and M2, each of the apertures 40 in combination with the adjacent section of the active region 13 may be regarded as an individual VCSEL unit. Therefore, the radiation emitter 100 comprises a plurality of these individual VCSEL units. The individual VCSEL units are narrowly spaced such that their radiation can be coupled into the same optical fiber (e.g. multimode fiber MMF as shown in FIG. 17).

[0061] FIG. 17 depicts a second exemplary embodiment of a radiation emitter 100 according to the present invention. In contrast to the first embodiment according to FIG. 16, the second embodiment comprises a first and a second damping tuning layer 200 and 201. The damping tuning layers 200 and 201 are deposited on top of the layer stack 10, preferably after fabricating the top contacts 61A and 61B.

[0062] The first optical damping tuning layer 200 is located on the first portion M1 of the mesa M. In the embodiment of FIG. 17, the first optical damping tuning layer 200 is arranged only on top of the uncovered sections 15a of the first top contact layer 15, i.e. inside the openings or windows W61A of the first top contact 61A. Alternatively, the first optical damping tuning layer 200 may also completely or partly cover the top contact 61A.

[0063] The second optical damping tuning layer 201 is located on the second portion M2 of the mesa M. In the embodiment of FIG. 17, the second optical damping tuning layer 201 is arranged on top of the uncovered sections 15a of the top contact layer 15, i.e. inside the openings or windows W62A of the second top contact 61B. Alternatively, the second optical damping tuning layer 201 may also completely or partly cover the top second contact 61B.

[0064] The optical characteristics of the first optical damping tuning layer 200 differs from the optical characteristics of the second optical damping tuning layer 201. For instance, the thicknesses of the layers may differ as shown in FIG. 17. Additional or alternatively, the materials of the layers may differ.

[0065] FIG. 18 depicts a top view of the second embodiment of FIG. 17 showing two emitters for each portion of the mesa.

[0066] In this second embodiment of FIGS. 17 and 18, the optical damping tuning layers 200 and 201 may be optimized for maximum energy efficiency at a given bitrate. For instance, the first mesa portion M1 may be optimized to achieve largest energy-efficient bitrate via low damping. In contrast, the second mesa portion M2 may be optimized to dissipate a minimum energy per bit at a medium bitrate. Depending on external requirements, either the first mesa portion M1 or the second mesa portion M2 may be operated to generate optical radiation.

[0067] In the embodiments shown in FIGS. 16 and 17, the cross section and diameter Dm of the mesa M is preferably in the range between 10 and 100 μm in order to be adapted to the diameter Dc of the core C of a standard multimode fiber MMF (typical core diameter Dc usually 50 or 65 μm). Such a dimension Dm of the mesa M allows both mesa portions M1 and M2 to efficiently couple their emissions into the same multimode fiber MMF. The multimode fiber MMF is preferably butt-coupled to the mesa M and its mesa portions M1 and M2 as shown on FIG. 17.

[0068] FIG. 19 shows EDR versus bitrate calculated from the small-signal response of mesa portions with different damping properties. Each mesa portion can be optimized for one target bit rate.

[0069] As s result, a two-portion mesa emitter can be optimized for two target bit-rate areas, as shown in FIG. 19. The two-portion mesa emitter can be switched to the optimum EDR for a given target bit-rate area because switching changes the properties of the emitter.

[0070] In the first and second exemplary embodiments according to FIGS. 16 and 17, each mesa portion M1 and M2 comprises two apertures 40. Alternatively, the mesa portions may comprise more or less apertures 40.

[0071] In the first and second exemplary embodiments according to FIGS. 16 and 17/18, the size, contour and orientation of all apertures 40 are identical. Alternatively, the size, contour and orientation of the apertures 40 may vary as will be discussed further below in connection with FIGS. 20 to 24.

[0072] FIG. 20 depicts a schematic top view of a third exemplary embodiment of a radiation emitter according to the present invention. In contrast to the embodiments according to FIGS. 16 and 17, the mesa in FIG. 20 comprises three mesa portions M1, M2 and M3 which are each provided with a separate top contact 61A, 61B and 61C. Via the allocated top contacts 61A, 61B and 61C, the three mesa portions M1, M2 and M3 may be operated individually, i.e. in parallel or consecutively, e.g. in individually assigned time frames.

[0073] In the exemplary embodiment of FIG. 20, the apertures 40 in each mesa portion M1, M2 and M3 are elongated along the same “portion-assigned” longitudinal direction A1, A2 or A3. More specifically, each mesa portion has its individually assigned orientation. The orientation of the apertures 40 in the first portion M1 and their longitudinal direction A1 has an angle of 60° with respect to the orientation of the apertures 40 in the second portion M2 and their longitudinal direction A2. The orientation of the apertures 40 in the second portion M2 and their longitudinal direction A2 has an angle of 60° with respect to the orientation of the apertures 40 in the third portion M3 and their longitudinal direction A3. Therefore, the orientation of the apertures 40 in the third portion M3 and their longitudinal direction A3 also has an angle of 60° with respect to the orientation of the apertures 40 in the first portion M1 and their longitudinal direction A1.

[0074] In other words, the longitudinal directions A1, A2 and A3 have an angle of 60° with respect to one another.

[0075] The elongated shape of the apertures 40 may lead to a polarized emission of radiation such that each mesa portion M1, M2 and M3 emits radiation with a specific polarization. Since the mesa portions M1, M2 and M3 may be individually operated, radiation with different polarizations may be generated simultaneously and polarization multiplexing may be carried out to increase the link capacity.

[0076] FIG. 21 depicts a fourth exemplary embodiment of a radiation emitter according to the invention. In contrast to embodiments according to FIG. 20, the mesa of FIG. 21 comprises two mesa portions M1 and M2 in which the apertures 40 are elongated along the same “portion-assigned” longitudinal direction A1 and A2. More specifically, each mesa portion M1 and M2 has its individually assigned orientation. The longitudinal directions A1 and A2 have an angle of 90° with respect to each other.

[0077] Since the elongated shape of the apertures 40 may lead to a polarized emission of radiation and since the mesa portions M1 and M2 may be individually operated, radiation with two different polarizations may be generated simultaneously and polarization multiplexing may be carried out in order to increase the link capacity.

[0078] FIGS. 22-25 show an exemplary method steps of fabricating apertures with different orientations.

[0079] FIG. 22 shows a grid of holes 30. The distribution of the holes 30 leads to two apertures having similar shape but different orientation enabling the emission of polarized light as discussed above with respect to FIGS. 20 and 21.

[0080] The holes 30 can be etched by a chloric acid based dry etching process. Depending on the process parameters like temperature and gas flow, the oxidation speed can also depend on the crystal axes, becoming anisotropic thus also affecting the shape of the resulting apertures 40.

[0081] The distances between the holes 30 and the size of the holes 30 can be chosen to position a sufficient number of apertures 40 so close to each other that the light emission can be coupled into e.g. a 50 μm or 62.5 μm core of a multimode fiber MMF as discussed above with reference to FIGS. 16 and 17

[0082] FIG. 23 shows the resulting apertures 40 based on an isotropic oxidation that yields circular oxidation fronts 32. The oxidation is stopped after two diamond-shaped apertures 40 with a 90° orientation difference have been formed.

[0083] FIG. 24 shows the resulting structure after etching the mesa M.

[0084] Etching a trench TR at least down to the lowest oxidizable intermediate layer 21 underneath the active region 13 (see FIG. 2) separates the mesa M into several portions M1 and M2, which can be pumped independently to each other as discussed above.

[0085] In summary the exemplary embodiments described above relate to a method for fabricating a vertical-cavity surface-emitting laser (VCSEL) as radiation emitter 100 with multiple apertures 40 narrowly spaced in separate mesa portions M1, M2 and/or M3 of the same single mesa M. The mesa portions M1-M3 may be operated simultaneously, for instance by way of polarization multiplexing to increase the link capacity. Alternatively, the mesa portions M1-M3 may be operated alternatively, for instance to choose minimum EDR for varying bitrates.

[0086] The fabrication of the VCSEL 100 may be based on etching of narrow holes 30, e.g. 5 μm or less, in a regular array of a few μm distance between each hole into VCSEL wafers containing for instance AlGaAs (preferentially about 98% Al-contents) aperture layers. The arrangement of the holes 30 with respect to each other is variable and application dependent, for instance to generate specific shapes (e.g. elongated) and/or specific orientations of the resulting apertures.

[0087] The oxidation of the e.g. A10 apertures 40 is progressing from the inside of the holes 30. The orientation of the axes of the hole-arrays can be varied with respect to the crystal axes, thus leading to self-limiting orientation dependent oxidation processes. The novel VCSEL properties, including increased output power, defined EDR and polarization, enable data transmission across large fiber distances ˜1 km at increased bit rates, reduced energy consumption and more.

[0088] The exemplary embodiments of the invention described above may have one or more of the following features and/or advantages: [0089] Exemplary embodiments of the invention may relate to a method for fabricating a vertical-cavity surface-emitting laser (VCSEL) with multiple apertures narrowly spaced in a single mesa M that may result e.g. in single mode emission together with large optical output power and small electrical resistance. [0090] Exemplary embodiments of the invention may consist of an active region sandwiched between two distributed Bragg reflectors (DBRs) and at least one oxide layer like a “normal” VCSEL structure. Any presently existing epi structure for high-speed oxide confined VCSELs can be used for the inventive approach. In contrast to presently employed VCSEL processing, the oxidation process may be based on etching holes of any shape into the wafer surface, exposing the oxide layer(s). These holes are serving as starting point for the lateral oxidation process. [0091] The speed of the wet oxidation of the oxidizable layer(s) 21-24 may depend on Al-contents, AlGaAs layer thickness, and most importantly on the crystallographic direction. In addition, it is controlled e.g. by temperature, total pressure, and water partial pressure. [0092] The arrangement of the etched holes in respect to each other and to the crystal axes, the distances between them, and finally the choice of the oxidation parameters impacts the shape of the resulting apertures and opens new design roads. The oxidation fronts may be circular or elliptical. The resulting apertures may have a diamond shape. [0093] The final processing step may comprise mesa M etching, re-contact deposition, and planarization based on the processing steps developed for “normal” VCSELs. [0094] GaAs/AlAs heterostructures are enabling the growth of lattice matched DBRs and high Al-content layers suitable for wet oxidation and leading to current and optical field confinement. The apertures will not be oxidized from the outside after etching a mesa M, but from the inside of holes, being first etched in regular arrays. [0095] The arrangement of the blind holes with respect to each other and to the crystal axes presents a free design parameter. The resulting apertures however may have always the same size. A difference in distance of the holes in one direction and the other direction may lead to a difference in oxide diameter in both directions and may allow polarized emission if desired. [0096] The oxidation speed depends on the crystal axes. The impact on the shape of the oxidation front has an impact on the shape of the resulting apertures. [0097] The alignment between the series of holes defined by the mask and the crystal axes may enable a shape optimization of the oxide confined apertures and allows to control the polarization status of the emitted light. [0098] The distances between the holes (d1 in one direction and d2 in the other direction) and the size of the holes can be chosen to position a sufficient number of apertures so close to each other, that additionally the emitted light emission can be coupled into e.g. the 50 or 62.5 μm core of a multimode fiber (MMF) preferably without coupling optics. [0099] The optical power increases linearly with the number of apertures. If the size of the apertures is chosen in such a way that the laser emits single mode light, the intensity increases with the number of apertures, showing identical wavelength, polarization and transverse mode. The electrical resistance decreases similarly with the number of apertures. The total resistance R.sub.t can be calculated by

[00001]$\frac{1}{R_t}=\text{?}\underset{=1}{\overset{n}{.Math.}}\frac{1}{R_x}$$\text{?}\text{indicates text missing or illegible when filed}$ [0100] With the resistance Rx of an individual aperture.

[0101] The various embodiments and aspects of embodiments of the invention disclosed herein are to be understood not only in the order and context specifically described in this specification, but to include any order and any combination thereof. Whenever the context requires, all words used in the singular number shall be deemed to include the plural and vice versa. Whenever the context requires, all options that are listed with the word “and” shall be deemed to include the word “or” and vice versa, and any combination thereof.

[0102] In the drawings and specification, there have been disclosed a plurality of embodiments of the present invention. The applicant would like to emphasize that each feature of each embodiment may be combined with or added to any other of the embodiments to modify the respective embodiment and create additional embodiments. These additional embodiments form a part of the present disclosure and, therefore, the applicant may file further patent claims regarding these additional embodiments at a later stage of the prosecution.

[0103] Further, the applicant would like to emphasize that each feature of each of the following dependent claims may be combined with any of the present independent claims as well as with any other (one ore more) of the present dependent claims (regardless of the present claim structure). Therefore, the applicant may direct further patent claims towards other claim combinations at a later stage of the prosecution.