METHOD FOR PRODUCING A DOUBLE-LAYER COATED CUTTING TOOL WITH IMPROVED WEAR RESISTANCE

Abstract

A method for producing a tool coated with a hard coating, the method including the following steps: applying a TiAlN coating layer onto a substrate with a first magnetron sputtering process and applying a Ti.sub.xSi.sub.1-xN coating layer onto the TiAlN layer with a second magnetron sputtering process, where x is smaller than or equal to 0.85 and preferably between and including 0.80 and 0. 70 whereas the second magnetron sputtering process is performed with power densities greater than 100 W/cm.sup.2 and as such is a HIPIMS process.

Claims

1. A method for producing a tool coated with a hard coating, the method comprising the following steps: applying a TiAlN coating layer onto a substrate with a first magnetron sputtering process applying a Ti.sub.xSi.sub.1-xN coating layer onto the TiAlN layer with a second magnetron sputtering process, where x is smaller than or equal to 0.85 and preferably between and including 0.80 and 0.70 characterized in that the second magnetron sputtering process is performed with power densities greater than 100 W/cm.sup.2 and as such is a HIPIMS process.

2. The method according to claim 1, characterized in that the second magnetron sputtering process is performed while applying a negative bias to the substrate with a value between and including −60V and −120V, in particular preferred with a value between and including −70V and −80V.

3. The method according to claim 1, characterized in that the first magnetron sputtering process is as well a HIPIMS process.

4. The method according to claim 3, characterized in that the first magnetron sputtering process is performed while applying a negative bias to the substrate with a value between and including −40V and −70V.

Description

SOLUTION ACCORDING TO THE INVENTION

[0009] In order to well understand the solution according to the present invention it is helpful to roughly describe the principles magnetron sputtering.

[0010] During sputtering a target (cathode) is bombarded with ions, which results in material being removed from the target. The acceleration of the ions in the direction of the target surface from the plasma is achieved by means of an electric field. During magnetron sputtering, a magnetic field is formed over the target surface. In this manner electrons in the plasma are forced onto a spiral path and circulate over the target surface. Due to their increased path, the number of collisions of electrons with atoms is dramatically increased, which leads to a higher ionization in this area over the target surface. This results in increased sputtering removal on the target and therefore leads to an increased sputtering rate. Conventional sputtering is performed in a DC mode and at power densities typically at 20 W/cm2. The disadvantage of such conventional sputtering is that the material removed from the target is ionized only to a very low degree. This means that a negative bias applied to the substrates will not directly accelerate the sputtered material in direction to the substrates. Coating densities which can be reached with conventional sputtering are therefore considerably lower than coating densities which can be realized with arc discharge ion plating.

[0011] HIPIMS (High Impulse Power Magnetron Sputtering) is a process that evolved from conventional sputtering and that uses the effect of pulse-like discharges with impulse duration in the range of microseconds to milliseconds with power densities greater than 100 W/cm2. It has been shown that, depending on the material, HIPIMS technology could achieve a ionization of up to 100% of the sputtered particles, thus eliminating the great disadvantage of conventional sputtering.

[0012] The method according to the present invention relates to HIPIMS sputtering and comprises the following steps: [0013] applying a TiAlN coating layer onto a substrate with a first magnetron sputtering process [0014] applying a Ti.sub.xSi.sub.1-xN coating layer onto the TiAlN layer with a second magnetron sputtering process, where x is smaller than or equal to 0.85 and preferably between and including 0.80 and 0.70,
characterized in that the second magnetron sputtering process is performed with power densities greater than 100 W/cm.sup.2 and as such is a HIPIMS method.

[0015] Accordingly produced layers did not show any phase segregation. It was surprising that the tools, coated according to the method as described above showed comparable or sometimes even better performance as the same tools however coated with arc-discharge ion plating and resulting in the phase segregation as described in EP 1174528 A2.

[0016] A high number of double-layer coatings were coated with different coating parameters. For the sputtering of the TiAlN layer for example a target was chosen with a concentration Ti:Al at 40 at % to 60 at %.

[0017] Within the TiSiN layer, one important parameter, which was varied, was the Si content in the sputtering target for sputtering the TiSiN layer. Experiments showed that a high Si content in this layer is preferred. Coatings with a Ti.sub.xSi.sub.1-xN layers with x=0.75 showed best results.

[0018] Another important parameter was the substrate bias during coating. Generally speaking whenever a HIPIMS process is performed a high bias applied during such process is of advantage. For the Ti.sub.xSi.sub.1-x the bias however should be chosen considerably below weaker than −150V as for these bias values the tools showed considerable wear.

[0019] Therefore according to a preferred embodiment of the present invention, the second magnetron sputtering process is performed while applying a negative bias to the substrate with a value between and including −60V and −100V, in particular preferred with a value between and including −70V and −80V.

[0020] According to another preferred embodiment of the present invention, the first magnetron sputtering process is as well a HIPIMS process. In this case it is especially preferred if the first magnetron sputtering process is performed while applying a negative bias to the substrate with a value between and including −40V and −70V.