THERMOCOMPRESSION BONDING WITH RAISED FEATURE

Abstract

A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.

Claims

1. A bond between a first substrate and a second substrate, comprising: a first metal layer on the first substrate; a raised feature on the second substrate having a peak; and a second metal layer over the second substrate and the raised feature, wherein adhesive bonding strength is due to a thermocompression bond between the first metal layer and the second metal layer in a vicinity of the raised feature, wherein the peak of the raised feature has a radius of curvature in its lateral cross sectional profile of less than about 5 microns, and this peak is embedded in the bond.

2. The bond of claim 1, wherein the second substrate and the raised feature are both silicon.

3. The bond of claim 1, wherein the first metal layer and the second metal layer are both gold, with a thickness of about 0.5 to 6 microns.

4. The bond of claim 1, wherein the raised feature has a radius of curvature of less than about 3 microns.

5. The bond of claim 1, wherein the first substrate and the second substrate comprise at least one of glass, metal, semiconductor or ceramic.

6. The bond of claim 1, wherein the raised feature is completely embedded in the first metal layer.

7. The bond of claim 1, wherein a width of the raised feature is about 5 microns and a height of the raised feature above a plane of the substrate is about 1 micron.

8. The bond of claim 1, wherein a width of the first metal layer and the second metal layer is about 50 microns to about 200 microns, which defines a width of a bondline of the same dimension, about 50 microns to about 200 microns.

9. The bond of claim 1, wherein the raised feature comprises at least one of a continuous perimeter and a plurality of discrete raised features spaced some distance apart from one another, around a device.

10. The bond of claim 1, wherein the first metal layer and the second metal layer both comprise at least one of gold, aluminum and copper of a thickness between about 0.5 microns and 6 microns.

11. A method for bonding two substrates, comprising: providing a first and a second substrate; forming a first layer of a metal over the first substrate; providing a raised feature in the second substrate; forming a second layer of a metal over the raised feature on the second substrate; pressing the first substrate against the second to form a substrate pair, with a temperature, pressure and duration sufficient to achieve a thermocompression bond and such that the raised feature is pressed into and embedded in the bond; and bonding the substrate pair with a thermocompression bond between the first metal layer and the second metal layer, around the raised feature, wherein adhesive bonding strength between the first substrate and the second substrate is in the vicinity of the raised feature as a result of thermocompression bond.

12. A method for bonding two substrates, wherein forming the raised feature comprises: forming a first oxide layer over the second substrate; depositing a layer of hard mask over first oxide layer; patterning the hard mask and the first oxide layer; and forming a second oxide layer over the second substrate; and removing the second oxide layer to leave the raised feature in the second substrate.

13. The method of claim 12, wherein the second oxide layer is about twice a thickness of the hard mask layer.

14. The method of claim 11, wherein the first substrate is pressed against the second substrate with a pressure of about 20 to 80 kN for at least about 20 minutes, at a temperature of between about 200 centigrade and 450 centigrade, and wherein the first metal layer and the second metal layer both comprise at least one of gold, aluminum and copper.

15. The method of claim 11, wherein forming the raised feature comprises: forming a layer of silicon nitride on a silicon wafer; patterning the layer of silicon nitride; growing a thick thermal oxide on the silicon substrate; and etching the thermal oxide away, to leave the raised feature.

16. The method of claim 16, wherein the thickness of the thermal oxide may be about twice the thickness of the silicon nitride layer.

17. The method of claim 11, wherein when the first substrate is pressed against the second substrate to form a substrate pair, the raised feature is completely embedded in the first metal layer.

18. The method of claim 11, wherein the first metal layer and the second metal layer both comprise at least one of gold, aluminum and copper.

19. The method of claim 11, wherein the first metal layer and the second metal layer both comprise gold and the pressure is about 40 kN and the duration is about 45 minutes, and the temperature is about 200 to about 450 centigrade.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Various exemplary details are described with reference to the following figures, wherein:

[0016] FIG. 1A is a schematic cross sectional diagram of the bonding layers and raised feature prior to bonding; FIG. 1B is a schematic cross sectional diagram of the bonding layers and raised feature after bonding;

[0017] FIG. 2 is a plan view of the bond, raised feature, and sealed device after bonding; and

[0018] FIGS. 3A, FIG. 3B, FIG. 3C, FIG. 3D, FIG. 3E and FIG. 3F illustrate a process for forming the raised feature.

[0019] FIG. 4 is a schematic cross sectional diagram of the bonding layers and raised feature during and after bonding, illustrating the lateral profile and radius of curvature of the raised feature; and

[0020] FIG. 5 is a schematic cross sectional diagram of the raised feature made by the LOCOS process.

[0021] It should be understood that the drawings are not necessarily to scale, and that like numbers may refer to like features.

DETAILED DESCRIPTION

[0022] A thermocompression bond is characterized by atomic motion between two surfaces brought into close contact. The atoms migrate from one crystal lattice to the other one based on crystal lattice vibration. This atomic interaction adheres the surfaces. Thermocompression bonding using two layers of gold (Au) is known, but the technique has the deficiencies described above. Other materials may also be capable of thermocompression bonding, including aluminum (Al) and copper (Cu) bonds. Although the embodiment described below is directed to a gold thermocompression bond, it should be understood that the techniques may be applied to other materials as well, such as aluminum (Al) and copper (Cu).

[0023] In one embodiment, the substrate and the raised feature are both silicon, and the first metal layer and the second metal layer are both gold, with a thickness of about 0.5 to 6 microns. In other embodiments, the substrates may comprise at least one of glass, metal, semiconductor and ceramic. In the discussion which follows, methods will be described for the general case of a pair of fabrication substrates and metal layers of undefined composition, as well as methods suited to silicon substrates and gold layers in particular.

[0024] FIG. 1A shows two bonding surfaces 100, 110 before bonding. Preferably these surfaces are metal layers, composed of Au that is 0.5 microns to 6.0 microns in thickness. One surface 110 also has a raised feature 150 formed therein. The raised feature 150 in the gold layer 110 may be a result of a conformal deposition of the gold material over a substrate 200 with a corresponding raised feature 250 formed thereon. As will be described below, adhesive bonding strength may exist near this raised feature 150 when applied against an opposing gold layer 100 on a second substrate 300.

[0025] Accordingly, shown in FIG. 1A is a first layer 100 of a first metal formed on a first substrate 300, a second layer 110 of a metal formed over a raised feature 250 on a second substrate 200. The conformal deposition of the second metal layer 110 may result in a corresponding raised feature 150 in the second metal layer.

[0026] The device according to this process may include a bond between a first substrate and a second substrate, comprising a first metal layer on the first substrate, a raised feature on the second substrate; and a second metal layer over the second substrate and the raised feature, wherein adhesive bonding strength between the first substrate and the second substrate is in a vicinity of the raised feature as a result of thermocompression bonding between the first metal layer and the second metal layer, wherein the peak of the raised feature has a radius of curvature in its lateral cross sectional profile of less than about 5 microns, and this peak is embedded in the bond. It should be understood that “in the vicinity of the raised feature” may mean a region spanning about 10 diameters of the raised feature.

[0027] The raised feature 250 in substrate 200 may be formed by the process described below with respect to FIGS. 3A-3F and FIG. 5. The width (or diameter) of the raised feature 250 may be about 5 microns and its height of the raised feature above a plane of the substrate may be about 1 micron. The radius of curvature of the raised feature 150 may be less than about 5 microns, and preferably less than about 3 microns. The raised feature may have a generally cylindrical, spherical or pyramidal shape, for example, pointed at the top on a broader base. The detailed shape of the raised feature may be a result of the technique used to create it. The raised feature 250 may be a continuous perimeter around a device, as shown in FIG. 2, or it may be a plurality of discrete raised features spaced some distance apart from one another. Preferably, the plurality of raised features would be spaced close enough together such that the thermocompression bond is still achieved and the bond is still hermetic. The plurality of raised features may therefore form a series, spaced around and generally encircling, or around, a device.

[0028] The width of the bonding planes may be between about 50 microns and about 200 microns. After bonding these surfaces may appear as shown in FIG. 1B. Importantly, the raised feature 150 is completely embedded in the material of the first metal layer, upper surface 100. More generally, when the first substrate is pressed against the second substrate to form a substrate pair, the raised feature is completely embedded in the first metal layer. Because the first substrate and the second substrate are flat, a contact area of the thermocompression bond may comprise at least about 75% of the width of the bondline. In some embodiments, the percentage of the bond line that is bonded is the width of the bondline minus the mis-alignment divided by the width. Typically the width is 50 um and the mis-alignment is 2 um, resulting in percent bonded area of around 96%.

[0029] FIG. 2 is a plan view of the bond, the device cavity and the enclosed device. This bond line 210 and raised feature 250 may form a substantially hermetic seal ring around a die or device 220. As shown in FIG. 2, the width of the first metal layer and the second metal layer may be about 50 microns to about 200 microns, which may define a width of a bondline of the same dimension, about 50 microns to about 200 microns. The first metal layer and the second metal layer may both comprise at least one of gold, aluminum and copper of a thickness between about 0.5 microns and 6 microns. A microfabricated device 220, such as a MEMS or an integrated circuit (IC) may be formed on either the first or the second substrate. Importantly, as can be seen in FIG. 2, the raised feature 250 may form a continuous perimeter around the device 220.

[0030] In one embodiment, the raised feature 250 is formed in the surface of substrate 200, and comprises the material of the substrate 200. FIGS. 3a-3f illustrate the process to form the raised feature in this embodiment. Starting with a silicon substrate 200 (FIG. 3A), a pad oxide layer 205 of 300-1000 A thickness may be grown as a stress relief layer (FIG. 3B). Next in FIG. 3C, a low pressure chemical vapor deposition (LPCVD) deposits a layer 215 of Si.sub.3N.sub.4, followed by a patterning process to prevent the local oxidation of the underlying Si, as shown in FIG. 3D. The width of this patterned feature will determine the radius of curvature of the raised feature. At this point, a thick thermal oxide 225 is grown as shown in FIG. 3E. The thickness of this oxide layer is roughly twice that of the required raised feature height. Finally, in FIG. 3F the thermal oxide is chemically etched away, leaving the raised features 250.

[0031] In order to form the raised feature 250 in substrate 200 more generally, i.e. in other sorts of substrate materials, the following procedure may be used: First form a first oxide layer over the substrate surface, then deposit a layer of hard mask over first oxide layer, pattern the hard mask and the first oxide layer; and form a second oxide layer over the substrate; and finally remove the second oxide layer to leave the raised feature in the substrate. In some embodiments, the second oxide layer may be about twice a thickness of the hard mask layer. Using silicon substrates specifically, the method for forming the raised feature may include forming a layer of silicon nitride on a silicon wafer, patterning the layer of silicon nitride; growing a thick thermal oxide on the silicon substrate; and etching the thermal oxide away, to leave the raised feature. As before, the thickness of the thermal oxide may be about twice the thickness of the silicon nitride layer.

[0032] To fabricate the bonded wafer pair using this technique, the method may include providing a first and a second substrate, providing a raised feature the first substrate; forming a first layer of a metal over the raised feature on the first substrate, pressing the first substrate against the second substrate to form a substrate pair, with a temperature, pressure and duration sufficient to achieve a thermocompression bond, and bonding the substrate pair with a thermocompression bond between the first metal layer and the second metal layer, around the raised feature, wherein most adhesive bonding strength between the first substrate and the second substrate is in the vicinity of the raised feature as a result of thermocompression bond.

[0033] It should be understood that the method may also be applied to other types of substrates in addition to silicon. For example, a glass, metal, semiconductor or ceramic substrate may be used on which a raised feature of another mechanically competent material is deposited. Silicon nitride, for example, may be formed on a semiconductor substrate using chemical vapor deposition (CVD). The gold layers 100 and 110 may then deposited conformally over this raised feature, and the process proceeds as previously described.

[0034] The process then provides for the layers previously described with respect to FIGS. 1a and 1b to be applied over the silicon substrate 200 as was shown in FIG. 3F. A first gold layer described above may be deposited on a first silicon substrate 100, and a second gold layer may be formed over the second substrate 200 with raised feature 250. The substrates may then be pressed together with a heat and pressure sufficient to achieve the gold-gold thermocompression bond. For the case of gold (Au) layers on silicon substrates, a bonding temperature may be between 200 and 450° C. with an applied force above 40 kN for 20 to 45 min may generally be sufficient to achieve the bond. Accordingly, when the first metal layer and the second metal layer both comprise gold, the pressure may be about 40 kN and the duration may be about 45 minutes, and the temperature may be about 200 to about 450 centigrade. More generally, and for other materials such as aluminum (Al) or copper (Cu), the first substrate may be pressed against the second substrate with a pressure of about 20 to 80 kN for at least about 20 minutes, at a temperature of between about 200 centigrade and 450 centigrade, and wherein the first metal layer and the second metal layer both comprise at least one of gold, aluminum and copper.

[0035] Under the loading pressure applied during bonding, the raised feature is completely embedded in the opposing surface, as was shown in FIGS. 1a and 1b. This brings the two bonding planes into contact. Thus the high initial pressure of the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature Meanwhile, the complete embedding of the raised feature into the opposing surface allows for the two bonding surfaces to come into contact. This large contact area provides for high strength as shown in FIG. 1B.

[0036] For an Al thermocompression bond, the bonding temperature can be from 400 to 450° C. with an applied force above 70 kN for 20 to 45 minutes. For Cu, a bonding temperature of around 380 to 450° C. with an applied force between 20 to 80 kN for 20 to 60 min may be sufficient.

[0037] The lateral cross sectional profile shown in FIG. 4 illustrates the advantageous details of the raised features used herein. The figure shows the first layer 100 on one substrate 300 and the second layer of metal 110 on the second substrate 200. In one embodiment, the second substrate 200 may have the raised feature 250 formed thereon. The raised feature 250 may be the same material as the second substrate 200, such that no material or morphological boundary may exist between the raised feature 250 and the second substrate 200. Accordingly, in one embodiment, the raised feature 250 comprises silicon and the second substrate also comprises silicon. The raised feature 250 comprises the material of the substrate, because it is made by consuming and/or removing adjacent substrate material adjacent to the raised feature. The manufacturing methodology may advantageously for a raised feature 250 with a radius of curvature as shown. This radius of curvature refers to the cross sectional profile of the raised feature. The radius of curvature may be on the order of less than about 5 microns and more preferably less than about 3 microns. However it is important that the apex of the raised feature be somewhat rounded, i.e. greater than about 0.5 microns. For smaller radii of curvature, excessive pressure may be applied to the metal layer 100.

[0038] Accordingly, a bond between a first substrate and a second substrate is described. The bond may comprise a first metal layer on the first substrate, a raised feature on the second substrate having a peak, and a second metal layer over the second substrate and the raised feature, wherein adhesive bonding strength is due to a thermocompression bond between the first metal layer and the second metal layer in a vicinity of the raised feature, wherein the peak of the raised feature has a radius of curvature in its lateral cross sectional profile of less than about 5 microns, and this peak is embedded in the bond. The bond 1000 is shown in FIG. 4 as the combination of metal layer 100 and 110. This thermocompression bond 1000 adheres the substrates 200 and 300, wherein the adhesive bonding strength is due to the thermocompression bonding of 100 and 110. The bond 1000 may form a hermetic seal around a MEMS or other microfabricated device 400, shown laterally adjacent to the bond.

[0039] It should be clearly understood that the radius of curvature as specified herein, refers to the curvature of the surface of the raised feature, as seen in the lateral cross sectional profile. I.e. if the bondline formed by the first metal layer 100 and the second metal layer 110 encloses a device 500 as shown in FIG. 4, the lateral cross sectional profile is that shown, and the raised feature peak 250 has this radius of curvature. This is the peak that will penetrate into the metal layers as described above.

[0040] FIG. 5 shows a raised feature made by the LOCOS process (Local Oxidation of Silicon). This process was described with respect to FIG. 3a-3f. The LOCOS process involves the masking of a portion of the silicon substrate and the oxidation of the unmasked portion. This oxidation consumes some of the adjacent silicon material, and is subsequently removed. Upon removal, a silicon raised feature results which has exactly the desired contour as shown in FIG. 5.

[0041] Comparison of FIG. 5 to FIG. 4 shows that the raised feature 250 may comprise the same material as the substrate 200, because it is made by consuming and/or removing substrate material adjacent to the raised feature 250. The manufacturing methodology which advantageously generates a raised feature with the advantageous radius of curvature may be LOCOS. and the radius of curvature may be on the order of less than about 5 microns and more preferably less than about 3 microns. However, the apex of the raised feature is still somewhat rounded, i.e. greater than about 0.5 microns. As explained above, a range of radii of curvature in the range 0.5 microns to about 3 microns is suitable. Using this shape of raised feature of sufficient mechanical competency assures that the pressures necessary for the thermocompression bond are achieved in the vicinity of the raised feature. Yet the apex is sufficiently rounded that the substrate is not in danger of breakage.

[0042] In addition to the peak 250 in the raised feature, the LOCOS process may yield a raised feature with a gradual shoulder on each side of the peak. The shoulder regions are also shown in FIG. 5 as reference numbers 260 and 265. These features may also be a result of the LOCOS fabrication process, and as such, the topography of the raised feature 250 is substantially different that the topography of a feature which is defined lithographically. A lithographically defined feature tends to have sharp corners and orthogonal edges.

[0043] While various details have been described in conjunction with the exemplary implementations outlined above, various alternatives, modifications, variations, improvements, and/or substantial equivalents, whether known or that are or may be presently unforeseen, may become apparent upon reviewing the foregoing disclosure. Accordingly, the exemplary implementations set forth above, are intended to be illustrative, not limiting.