Switching atomic transistor and method for operating same

Abstract

Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration.

Claims

1. A switching atomic transistor comprising: a substrate; a source electrode formed on the substrate; a drain electrode formed on the substrate and spaced apart from the source electrode; an intermediate layer formed over the source electrode and the drain electrode to fill the space between the source electrode and the drain electrode; a diffusion barrier layer formed on the intermediate layer to prevent diffusion of ions of the intermediate layer; and an ion source gate electrode formed on the diffusion barrier layer to supply ions to the intermediate layer upon an initial operation.

2. The switching atomic transistor of claim 1, wherein the source electrode or the drain electrode is formed of at least one material selected from a group consisting of p-doped Si, n-doped Si, WN, AlN, TaN, HfN, TiN, titanium oxynitride (TiON), and tungsten oxynitride (WON).

3. The switching atomic transistor of claim 1, wherein the intermediate layer is formed of at least one material selected from a group consisting of CuInS, CuInSe, CuInS, CdInSe, MnInS, MnZnInS, ZnInSe, InS, InS Se, InSe, CdS, ZnCdS, ZnInS, a-Si, SiO.sub.2, Al.sub.2O.sub.3, Ta.sub.2O.sub.5, metal oxides, crystalline SiO.sub.2, crystalline Al.sub.2O.sub.3, and CuS.

4. The switching atomic transistor of claim 1, wherein the ion source gate electrode is formed of at least one material selected from a group consisting of Cu, Ag, and alloys thereof.

5. The switching atomic transistor of claim 1, wherein the diffusion barrier layer is formed of at least one material selected from a group consisting of WN, AlN, TaN, HfN, GaN, SiN.sub.x, and Si.sub.3N.sub.4.

6. The switching atomic transistor of claim 1, further comprising a capping layer formed on the ion source gate electrode to protect the ion source gate electrode.

7. The switching atomic transistor of claim 6, wherein the capping layer is formed of at least one material selected from a group consisting of WN, AlN, TaN, HfN, TiN, TiON, and WON.

8. A method of operating a switching atomic transistor including a source electrode formed on a substrate, a drain electrode formed on the substrate and spaced apart from the source electrode, an intermediate layer formed over the source electrode and the drain electrode to fill the space between the source electrode and the drain electrode, a diffusion barrier layer formed on the intermediate layer, and an ion source gate electrode formed on the diffusion barrier layer, the method comprising: applying an overvoltage to the ion source gate electrode; enabling ions to migrate from the ion source gate electrode into the intermediate layer due to the overvoltage; applying a positive voltage to the ion source gate electrode so that ions migrate to a channel area inside the intermediate layer to form an ion layer; and applying a negative voltage to the ion source gate electrode so that ions migrate toward the ion source gate electrode to eliminate the ion layer.

9. The method of claim 8, wherein the applying of a positive voltage to the ion source gate electrode so that ions migrate to a channel area inside the intermediate layer to form an ion layer and the applying of a negative voltage to the ion source gate electrode so that ions migrate toward the ion source gate electrode to eliminate the ion layer comprise adjusting a source-drain current by adjusting the number of ions to be moved depending on levels of the voltage applied to the ion source gate electrode.

Description

DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a sectional view of a switching atomic transistor according to an embodiment of the present invention.

(2) FIG. 2 is a sectional view of a switching atomic transistor additionally including a capping layer on an ion source gate electrode according to an embodiment of the present invention.

(3) FIG. 3 is a schematic diagram illustrating migration of ions in an intermediate layer according to a gate voltage in a switching atomic transistor according to an embodiment of the present invention.

(4) FIGS. 4A to 4C are characteristic graphs of a two-electrode structure switching atom device produced to evaluate operation of the device depending on the presence or absence of a diffusion barrier layer.

(5) FIG. 5 is a graph illustrating operation of the switching atomic transistor according to an embodiment of the present invention.

(6) FIG. 6 is a sectional view of a vertical atomic transistor according to an embodiment of the present invention.

(7) FIG. 7 is a plan view showing a process of producing the vertical atomic transistor according to an embodiment of the present invention.

(8) FIG. 8 is a sectional view showing the process of producing the vertical atomic transistor according to an embodiment of the present invention.

(9) FIG. 9 is a diagram illustrating operation of the vertical atomic transistor according to an embodiment of the present invention.

(10) FIG. 10 is a graph showing a change in a source-drain current according to a gate voltage of the vertical atomic transistor produced according to an embodiment of the present invention.

MODE OF THE INVENTION

(11) Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

(12) The present invention may be embodied in many different forms, and specific embodiments thereof illustrated in the drawings will be described in detail. However, the present invention is not limited to the specific embodiments described below, but rather the present invention includes all alternatives, modifications, and equivalents falling within the spirit of the present invention defined by the appended claims.

(13) It will be understood that when an element such as a layer, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present.

(14) It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, areas, layers, and/or regions, these elements, components, areas, layers, and/or regions are not be limited by these terms.

Embodiment 1: Switching Atomic Transistor

(15) FIG. 1 is a sectional view of a switching atomic transistor 100 according to an embodiment of the present invention.

(16) Referring to FIG. 1, the switching atomic transistor 100 includes a source electrode 130 formed on a substrate 110, a drain electrode 120 formed on the substrate 110 and spaced apart from the source electrode 130, an intermediate layer 140 formed on the source electrode 130 and the drain electrode 120 and configured to fill the space between the source electrode 130 and the drain electrode 120, a diffusion barrier layer 150 formed on the intermediate layer 140, and an ion source gate electrode 160 formed on the diffusion barrier layer 150.

(17) The substrate 110 may be formed of at least one material selected from the group consisting of Si, Al.sub.2O.sub.3, SiC, Si.sub.3N.sub.4, GaAs, and GaN. Also, a surface oxide layer (not shown) may be formed on the substrate 110 and may be formed of any one material selected from the group consisting of SiO.sub.2, Al.sub.2O.sub.3, crystalline SiO.sub.2, and crystalline Al.sub.2O.sub.3. A general metallic material may be used for the substrate 110.

(18) The source electrode 130 and the drain electrode 120 are formed on the substrate 110 and spaced apart from each other. The space between the source electrode 130 and the drain electrode 120 is preferably in the range of 2 nm to 20 nm, but the present invention is not limited thereto.

(19) The source electrode 130 and the drain electrode 120 may be formed of at least one material selected from the group consisting of p-doped Si, n-doped Si, WN, AlN, TaN, HfN, TiN, titanium oxynitride (TiON), and tungsten oxynitride (WON).

(20) The intermediate layer 140 is formed on some regions of the source electrode 130 and the drain electrode 120 and on a portion of the substrate 110 exposed to the space between the source electrode 130 and the drain electrode 120.

(21) An amorphous semiconductor, a metal oxide, and a metal sulfide may be used as the material of the intermediate layer 140. For example, the material of the intermediate layer 140 may be at least one material selected from the group consisting of CuInS, CuInSe, CuInS, CdInSe, MnInS, MnZnInS, ZnInSe, InS, InSSe, InSe, CdS, ZnCdS, ZnInS, a-Si, SiO.sub.2, Al.sub.2O.sub.3, crystalline SiO.sub.2, crystalline Al.sub.2O.sub.3, CuS, and metal oxides, but the present invention is not limited thereto.

(22) The intermediate layer 140 may have a thickness of 1 nm or more for normal operation of the switching atomic transistor, preferably between 1 nm and 10 nm.

(23) The diffusion barrier layer 150 is formed on the intermediate layer 140. The diffusion barrier layer 150 may be formed of at least one material selected from the group consisting of WN, AlN, TaN, HfN, GaN, SiN.sub.x, and Si.sub.3N.sub.4.

(24) The ion source gate electrode 160 is formed on the diffusion barrier layer 150.

(25) Any metal can be used for the ion source gate electrode 160 as long as the metal has a high diffusion coefficient in a solid so that metal ions can migrate due to an electric field. For example, the ion source gate electrode 160 may be formed of at least one material selected from the group consisting of Cu, Ag, and alloys thereof, but the present invention is not limited thereto.

(26) In particular, when an alloy such as AgNi or CuTe is used as the material of the ion source gate electrode 160, over-injection of ions from the ion source gate electrode 160 is prevented when the switching atomic transistor is repeatedly driven, thereby further increasing stability of the switching atomic transistor.

(27) The ion source gate electrode 160 may have a thickness of 1 nm to 100 nm.

(28) FIG. 2 is a sectional view of a switching atomic transistor 200 which further includes a capping layer 210 on the ion source gate electrode 160 according to an embodiment of the present invention.

(29) Referring to FIG. 2, the capping layer 210 is formed on the ion source gate electrode 160 to prevent oxidation of the ion source gate electrode 160.

(30) The capping layer 210 may be formed of at least one material selected from the group consisting of WN, AlN, TaN, HfN, TiN, TiON, and WON. Since the diffusion barrier layer 150 is present between the ion source gate electrode 160 and the intermediate layer 140, the transistor is hardly influenced by the oxidation of the ion source gate electrode 160. However, when the thickness of the ion source gate electrode 160 is designed to range from 1 nm to 5 nm, the oxidation of the ion source gate electrode 160 may adversely influence the diffusion barrier layer 150 and the intermediate layer 140. Accordingly, it is necessary to form the capping layer 210 on the ion source gate electrode 160 in order to minimize the influence of the oxidation of the ion source gate electrode 160.

(31) FIG. 3 is a schematic diagram illustrating migration of ions in the intermediate layer 140 according to the voltage of the gate electrode in the switching atomic transistor according to an embodiment of the present invention.

(32) Referring to FIG. 3, an internal operation state of the switching atomic transistor 100 corresponding to a voltage applied to the ion source gate electrode 160 is modeled to be schematized and will be described step by step.

(33) State S1 shows an initial state of the switching atomic transistor.

(34) In order to transition to state S2, a voltage, i.e., an overvoltage, higher than a voltage applied to the ion source gate electrode 160 while the switching atomic transistor is repeatedly operated is applied to the ion source gate electrode 160 upon an initial operation. The high voltage applied upon the initial operation causes ions from the ion source gate electrode 160 to pass through the diffusion barrier layer 150 and flow into the intermediate layer 140. The ions that have flowed into the intermediate layer 140 migrate to a channel area 170 by a voltage, i.e., a positive voltage, applied to the ion source gate electrode 160 and forms an ion layer, which serves as a conductive bridge. The conductive ion layer enables electric current to flow from the source electrode 130 to the drain electrode 120. That is, the source electrode 130 and the drain electrode 120 are turned on. After an appropriate number of ions flow into the intermediate layer 140, a high voltage such as that applied upon the initial operation is not applied to the ion source gate electrode 160. In other words, after an appropriate number of ions flow into the intermediate layer 140, a voltages is applied not for additional ion flow but for an iterative operation in which the ions migrates in the intermediate layer 140 to form or eliminate an ion layer.

(35) When a voltage, e.g., a negative voltage, having a polarity opposite to that of the voltage applied to the ion source gate electrode 160 in state S2 in order to form the ion layer is applied to the ion source gate electrode 160, the ion layer of the channel area 170 starts to decrease (S3) and finally the ion layer is removed from the channel area 170 (S4). That is, since the flow of electrons from the source electrode 130 to the drain electrode 120 disappears, no electric current flows and thus the internal operation state changes to an off state. The applying of a positive voltage to the ion source gate electrode 160 so that ions migrate to a channel area 170 inside the intermediate layer 140 to form an ion layer and the applying of a negative voltage to the ion source gate electrode 160 so that ions migrate toward the ion source gate electrode 160 to eliminate the ion layer may include adjusting a source-drain current by adjusting the number of ions to be moved depending on levels of the voltage applied to the ion source gate electrode 160.

(36) Hereinafter, the reference numerals of FIG. 1 will be used to describe a manufacturing example according to this embodiment.

Manufacturing Example 1

(37) A source electrode 130 and a drain electrode 120 were formed on a substrate 110. The source electrode 130 and the drain electrode 120 were formed of TiN. An intermediate layer 140 was formed on some regions of the source electrode 130 and the drain electrode 120 and on a portion of the substrate 110 exposed to the space between the source electrode 130 and the drain electrode 120. The intermediate layer 140 was formed of Ag.sub.2S. A diffusion barrier layer 150 was formed on the intermediate layer 140. The diffusion barrier layer 150 was formed of WN. The switching atomic transistor according to manufacturing example 1 was manufactured by forming an ion source gate electrode 160 on the diffusion barrier layer 150 using AgCu.

(38) Ag ions of the intermediate layer 140 may migrate according to a voltage applied to the ion source gate electrode 160. Accordingly, when Ag.sub.2S is used for the intermediate layer 140 like manufacturing example 1, it is possible to omit a step of applying an overvoltage to the ion source gate electrode 160 to diffuse Cu ions into the intermediate layer 140 for the purpose of an initial operation.

(39) Also, when the step of applying an overvoltage to the ion source gate electrode 160 to diffuse Cu ions or Ag ions into an ion channel layer is not omitted, the Cu ions or Ag ions that have migrated from the ion source gate electrode 160 is added to Ag ions present in the intermediate layer 140, so that the number of ions involved in the operation of the transistor increases in the intermediate layer 140. Therefore, there is an advantage in that the operation of the switching atomic transistor becomes possible at a low voltage.

(40) Hereinafter, the reference numerals of FIG. 2 will be used to describe manufacturing examples according to this embodiment.

Manufacturing Example 2

(41) A source electrode 130 and a drain electrode 120 were formed of TiN and to a thickness of 10 nm, and an intermediate layer 140 was formed of Cu.sub.2S and to a thickness of 15 nm. Also, an ion source gate electrode 160 was formed of CuAg and to a thickness of 10 nm, and a diffusion barrier layer 150 was formed of HfN and to a thickness of 10 nm. In manufacturing example 2, no capping layer 210 was formed on the ion source gate electrode 160.

(42) In manufacturing example 2, since the thickness of the ion source gate electrode 160 was greater than or equal to 5 nm, a switching atomic transistor having less influence due to oxidation of the ion source gate electrode 160 was manufactured even without the formation of the capping layer 210.

Manufacturing Example 3

(43) A source electrode 130 and a drain electrode 120 were formed of TiN and to a thickness of 10 nm, and an intermediate layer 140 was formed of CuTeS and to a thickness of 10 nm. Also, an ion source gate electrode 160 was formed of CuAg and to a thickness of 5 nm, and a diffusion barrier layer 150 was formed of HfN and to a thickness of 10 nm.

(44) Also, a switching atomic transistor was manufactured by forming a capping layer 210 on the ion source gate electrode 160, of WN, and to a thickness of 5 nm or more.

Manufacturing Example 4

(45) A source electrode 130 and a drain electrode 120 were formed of TiN and to a thickness of 10 nm, and an intermediate layer 140 was formed of CuTeS and to a thickness of 10 nm. Also, an ion source gate electrode 160 was formed of Cu and to a thickness of 5 nm, and a diffusion barrier layer 150 was formed of AlN and to a thickness of 10 nm.

(46) Also, a switching atomic transistor was manufactured by forming a capping layer 210 on the ion source gate electrode 160, of TaN, and to a thickness of 5 nm or more.

Evaluation Example 1

(47) FIGS. 4A to 4C are characteristic graphs of a two-electrode structure switching atomic device produced to evaluate operation of the device depending on the presence or absence of a diffusion barrier layer.

(48) Referring to FIG. 4A, the switching atomic two-electrode device includes an ion source electrode, an inactive electrode, and an ion channel layer interposed between the ion source electrode and the inactive electrode. The ion source electrode is a pure-metal electrode. The switching atomic two-electrode device includes no diffusion barrier layer.

(49) Referring to FIG. 4B, the switching atomic two-electrode device includes an ion source electrode, an inactive electrode, and an ion channel layer interposed between the ion source electrode and the inactive electrode. The ion source electrode is a CuTe metal alloy electrode.

(50) Referring to FIG. 4C, the switching atomic two-electrode device includes an ion source electrode, an inactive electrode, an ion channel layer interposed between the ion source electrode and the inactive electrode, and a diffusion barrier layer interposed between the ion channel layer and the ion source electrode. CuTe is applied to the ion source electrode to form a metal alloy electrode.

(51) Referring to FIGS. 4A and 4B, it can be seen that the degree of variation (FIG. 4B) of the switching atomic two-electrode device employing a metal alloy electrode as the material of the ion source electrode is improved compared to the degree of variation (FIG. 4A) of the switching atomic two-electrode device employing a pure-metal electrode as the material of the ion source gate electrode.

(52) Referring to FIG. 4C, it can be seen that the degree of variation of the switching atomic two-electrode device employing a metal alloy electrode as the ion source electrode and adopting a diffusion barrier layer is most greatly improved. This means that the operation of the switching atomic two-electrode device adopting the diffusion barrier layer is most stable.

Evaluation Example 2

(53) FIG. 5 is a graph illustrating operation of the switching atomic transistor according to an embodiment of the present invention.

(54) Referring to FIG. 5, it can be seen that a source-drain current increases in direction #1 as the voltage of the ion source gate electrode 160 increases and that a source-drain current is maintained or decreases in direction #2 as the voltage of the ion source gate electrode 160 decreases. This is a hysteresis loop different from conventional transistors.

(55) Subsequently, it can be seen that a low resistance state is maintained when the voltage of the ion source gate electrode 160 is swept in the negative direction and then the low resistance state transitions to a high resistance state when a high negative voltage, such as approximately −10 V, is applied as the voltage of the ion source gate electrode 160.

(56) When the voltage applied to the ion source gate electrode 160 is swept in the positive direction (direction #4) in the high resistance state, an electric current between the source electrode 130 and the drain electrode 120 is returned to an initial position, i.e., zero when the voltage of the ion source gate electrode 160 is zero.

(57) In addition, when the voltage applied to the ion source gate electrode 160 is swept from 0 V to +1 V from the initial state and then the voltage of the ion source gate electrode 160 is swept again in the negative direction as shown in a dotted line, a hysteresis loop shape is shown in which the low resistance state is maintained during the initial decrease in the voltage of the ion source gate electrode 160 and the source-drain current decreases significantly to zero when the voltage of the ion source gate electrode 160 reaches a specific point. Accordingly, by adjusting the voltage applied to the ion source gate electrode 160, it is possible to use the switching atomic transistor as a multi-level non-volatile memory device.

Embodiment 2: Vertical Atomic Transistor

(58) A vertical atomic transistor capable of high integration based on the same technical concept as the switching atomic transistor described in Embodiment 1 will be disclosed below. With respect to the same or similar elements to those of the switching atomic transistor of Embodiment 1, the descriptions thereof will be omitted to avoid repeat description, and the following description will focus on the characteristic structure and operation method of the vertical atomic transistor with reference to the drawings.

(59) FIG. 6 is a sectional view of the vertical atomic transistor according to an embodiment of the present invention.

(60) Referring to FIG. 6, a surface oxide layer 520 is disposed on a substrate 510, and a drain electrode 565 is formed on the surface oxide layer 520. An ion channel layer 560 is formed on a portion of the drain electrode 565 to have a height perpendicular to the substrate 510. A first oxide layer 530 is formed on the surface oxide layer 520 and the drain electrode 565 in a peripheral area in which the ion channel layer 560 is formed. The first oxide layer 530 has a thickness lower than the height of the ion channel layer 560 so that a portion of a side surface of the ion channel layer 560 is exposed. A first diffusion barrier layer 550 is formed in contact with the exposed side surface of the ion channel layer 560. An ion source gate electrode 540 is formed in contact with an outer surface of the first diffusion barrier layer 550. A second diffusion barrier layer 575 and a source electrode 570 are formed on the ion channel layer 560.

(61) The substrate 510 may be formed of a material such as those described in Embodiment 1. The surface oxide layer 520 may be formed on the substrate 510. The surface oxide layer 520 may be formed of any one material selected from the group consisting of SiO.sub.2, Al.sub.2O.sub.3, crystalline SiO.sub.2, and crystalline Al.sub.2O.sub.3.

(62) The drain electrode 565 may be formed of at least one material selected from the group consisting of p-doped Si, n-doped Si, WN, AlN, TaN, HfN, TiN, TiON, and WON.

(63) The ion channel layer 560 formed on the drain electrode 565 may have a width of 1 nm to 100 nm and a height of 2 mm to 30 nm. The height of the ion channel layer 560 may determine the space between the drain electrode 565 and the source electrode 570.

(64) The ion channel layer 560 may be formed of at least one material selected from the group consisting of CuInS, CuInSe, CuInS, CdInSe, MnInS, MnZnInS, ZnInSe, InS, InSSe, InSe, CdS, ZnCdS, ZnInS, a-Si, SiO.sub.2, Al.sub.2O.sub.3, crystalline SiO.sub.2, crystalline Al.sub.2O.sub.3, CuS, and metal oxides.

(65) The first oxide layer 530 may be formed around the ion channel layer 560. According to another embodiment of the present invention, the first oxide layer 530 may be replaced with an ion channel layer forming layer 620. The first oxide layer 530 may have a thickness smaller than the height of the ion channel layer 560. Accordingly, a portion of a side surface of the ion channel layer 560 is exposed.

(66) The first oxide layer 530 may be formed of at least one material selected from the group consisting of CuInS, CuInSe, CuInS, CdInSe, MnInS, MnZnInS, ZnInSe, InS, InSSe, InSe, CdS, ZnCdS, ZnInS, a-Si, SiO.sub.2, Al.sub.2O.sub.3, crystalline SiO.sub.2, crystalline Al.sub.2O.sub.3, CuS, and metal oxides.

(67) The first diffusion barrier layer 550 is formed on the exposed portion of the side surface of the ion channel layer 560. The first diffusion barrier layer 550 may be formed of a conductive nitride. For example, the first diffusion barrier layer 550 may be formed of at least one material selected from the group consisting of WN, AlN, TaN, HfN, GaN, SiN.sub.x, and Si.sub.3N.sub.4, but the present invention is not limited thereto. The first diffusion barrier layer 550 may have a thickness of 0.4 nm to 5 nm, but the present invention is not limited thereto. The first diffusion barrier layer 550 can suppress fatigue that may occur in the ion channel layer 560 due to repeated operation of the vertical atomic transistor to improve stability of the vertical atomic transistor.

(68) The ion source gate electrode 540 may be formed on the outer surface of the first diffusion barrier layer 550. The ion source gate electrode 540 may be a metal that has a high diffusion coefficient in a solid so that metal ions can migrate due to an electric field. For example, the ion source gate electrode 540 may be formed of any one material selected from the group consisting of Cu, Ag, and alloys thereof, but the present invention is not limited thereto. The ion source gate electrode 540 may be formed by performing sulphidation on at least one of Cu, CuTe, and Ag through chemical vapour deposition (CVD). The ion source gate electrode 540 may have a thickness of 1 nm to 100 nm, but the present invention is not limited thereto.

(69) The second diffusion barrier layer 575 is formed on the ion channel layer 560. The second diffusion barrier layer 575 may be formed of a conductive nitride. The second diffusion barrier layer 575 may have a thickness of 0.4 nm to 5 nm, but the present invention is not limited thereto.

(70) The second diffusion barrier layer 575 may be formed of at least one material selected from the group consisting of WN, AlN, TaN, HfN, GaN, SiN.sub.x, and Si.sub.3N.sub.4.

(71) Optionally, a second oxide layer formed on a side surface of the second diffusion barrier layer 575 and configured to shield the exposed portion of the side surface of the ion channel layer 560 may be formed over the first oxide layer 530.

(72) The second oxide layer (not shown) may be formed of at least one material selected from the group consisting of CuInS, CuInSe, CuInS, CdInSe, MnInS, MnZnInS, ZnInSe, InS, InSSe, InSe, CdS, ZnCdS, ZnInS, a-Si, SiO.sub.2, Al.sub.2O.sub.3, crystalline SiO.sub.2, crystalline Al.sub.2O.sub.3, CuS, and metal oxides.

(73) The source electrode 570 is formed on the second diffusion barrier layer 575. The source electrode 570 may be formed of at least one material selected from the group consisting of Cu, Ag, and alloys thereof. For example, the material may include, but is not limited to, Cu.sub.2S, CuTeS, Ag, CuTeGe, AgSe, CuTeSi, and Ag.sub.2S.

(74) FIG. 7 is a plan view showing a process of producing the vertical atomic transistor according to an embodiment of the present invention.

(75) In order to describe FIG. 7, the reference numerals of FIG. 6 will be used for elements not shown in FIG. 7.

(76) Referring to FIG. 7, first, a drain electrode 565 is formed on a substrate 510 (S1). The drain electrode 565 may be formed using a known patterning process and metal deposition technique used in a semiconductor process without particular limitation.

(77) An ion channel layer forming layer 620 is formed on the drain electrode 565 and the substrate 510 (S2). As described with reference to FIG. 1, a first oxide layer 530 and an ion channel layer forming layer 620 may be selectively formed. When the ion channel layer forming layer 620 is formed, an ion channel layer 560 may be formed using the ion channel layer forming layer 620 in subsequent processes.

(78) An etch mask 630 is formed over the ion channel layer forming layer 620 and then is used to etch out a portion of the ion channel layer forming layer 620 (S3). The etch mask 630 may be obtained by patterning a photoresist through a known photolithography process used in a semiconductor process. Alternatively, the etch mask 630 may be a hard mask. For example, the etch mask may be formed of SiN.sub.x, but the present invention is not limited thereto.

(79) An area that is not etched out of the ion channel layer forming layer 620 due to the etch mask 630 forms an ion channel layer 560. By stopping the etching before all of the ion channel layer forming layer 620 is etched out, the remaining ion channel layer forming layer 620 may serve as the first oxide layer 530.

(80) A first diffusion barrier layer 550 and an ion source gate electrode 540 are stacked on an entire surface of a structure including the side surface of the ion channel layer 560 exposed by etching out a portion of the ion channel layer forming layer 620, and patterned (S4).

(81) A second oxide layer 660 is formed on the ion source gate electrode 540, and then the mask 630 is removed to expose an upper surface of the ion channel layer 560. A second diffusion barrier layer 575 is formed on the upper surface of the ion channel layer 560 which is exposed by removing the mask 630 (S5).

(82) A source electrode 570 is formed on the second diffusion barrier layer 575 to produce the vertical atomic transistor (S6).

(83) FIG. 8 is a sectional view showing the process of producing the vertical atomic transistor according to an embodiment of the present invention.

(84) Referring to FIG. 8, a surface oxide layer 520 is formed on a substrate 510. A drain electrode 565 is formed on the surface oxide layer 520 (S1).

(85) An ion channel layer is formed on the drain electrode 565, and an etch mask 630 is formed on the ion channel layer to etch the ion channel layer 560 (S2). Since a first oxide layer 530 is used unlike FIG. 7, the ion channel layer 560, except for a part where the etching is prevented by the etch mask 630, is etched out completely.

(86) The first oxide layer 530 is formed on the surface oxide layer 520 and the drain electrode 565 in a peripheral area of the ion channel layer 560. The first oxide layer 530 has a thickness such that a portion of a side surface of the ion channel layer 560 can be exposed. A first diffusion barrier layer 550 and an ion source gate electrode 540 are deposited on an entire surface of the structure and patterned (S3).

(87) A second oxide layer 620 is formed on the structure to expose a portion of the ion source gate electrode 540. A second diffusion barrier layer 575 is formed on an upper surface of the ion channel layer 560 which is exposed from the second oxide layer 620 by removing the mask 630. A source electrode 570 is formed on the second diffusion barrier layer 575 and the structure to produce the vertical atomic transistor according to an embodiment of the present invention.

Manufacturing Example 5

(88) A silicon dioxide surface oxide layer 520 was formed on a silicon wafer substrate 510, and a drain electrode 565 was formed on the surface oxide layer 520. The drain electrode 565 was formed of TaN and to a thickness of 20 nm. An ion channel forming layer 620 was formed on the drain electrode 565. The ion channel forming layer 620 was formed by depositing CuTeS to a thickness of 30 nm. An etch mask 630 was formed on the ion channel forming layer 620, the ion channel forming layer 620 was each using the etch mask 630 to forming an ion channel layer 560 having a height of 30 nm under the etch mask, and to leave the CuTeS layer with a thickness of 5 nm to 10 nm in a peripheral area of the ion channel layer to serve the same role as the first oxide layer 530. A first diffusion barrier layer 550 was formed of WN with a thickness of 10 nm and on an exposed side surface of the ion channel layer 560, and an AgCu ion source gate electrode 540 was formed on another side surface of the first diffusion barrier layer 550 and to a thickness of 20 nm. Subsequently, a second oxide layer 620 was formed by stacking AlN with a thickness of 20 nm. A second diffusion barrier layer 575 was formed of WN with a thickness of 5 nm and on an upper surface of the ion channel layer 560 exposed by removing the etch mask 630, and an AgCu source electrode 570 was formed on the second diffusion barrier layer 575 and to a thickness of 20 nm. Chemical vapor deposition and atomic layer epitaxy were used to form the electrode layer, insulating layer, and resistive layer.

Manufacturing Example 6

(89) A drain electrode 565 was formed on a silicon wafer substrate, and a first oxide layer 530 of aluminum nitride was formed on the drain electrode 565 to a thickness of 20 nm. The first oxide layer 530 is etched to form an ion channel layer 560 with a height of 30 nm and a diameter of 10 nm. Subsequently, a first diffusion barrier layer 550, an ion source gate electrode 540, a second oxide layer 620, a second diffusion barrier layer 575 and a source electrode 570 were formed using the same methods as described above in manufacturing example 5.

(90) FIG. 9 is a diagram illustrating operation of the vertical atomic transistor according to an embodiment of the present invention.

(91) Referring to FIG. 9, by applying a positive overvoltage to a source electrode 570 during an initial state, metal ions of the source electrode 570 moves to an ion channel layer 560 through a second diffusion barrier layer 575 (S1).

(92) A conductive bridge 710 for connecting the source electrode 570 and a drain electrode 565 is formed inside the ion channel layer 560 (S2). A source-drain current flows due to the formation of the conductive bridge 710. This state is called a forming state.

(93) When a negative voltage is applied to an ion source gate electrode 540, ions forming the conductive bridge 710 inside the ion channel layer 560 migrate toward a first diffusion barrier layer 550 (S3). As the conductive bridge 710 is broken, the ion channel layer 560 becomes a high resistance state, and a source-drain current no longer flows.

(94) When a positive voltage is applied to the ion source gate electrode 540, the ions migrate to a center portion of the ion channel layer 560 to form the conductive bridge 710 again (S4). Accordingly, the vertical atomic transistor becomes a low resistance state in which a source-drain current flows again.

(95) The forming is once performed, but steps S3 and S4 may be repeatedly performed to control operation of the vertical atomic transistor.

(96) FIG. 10 is a graph showing a change in a source-drain current according to a gate voltage of the vertical atomic transistor produced according to an embodiment of the present invention.

(97) Referring to FIG. 10, it can be seen that a source-drain current increases in direction #1 as a voltage of the ion source gate electrode 540 increases and that a source-drain current is maintained or decreases in direction #2 as the voltage of the ion source gate electrode 540 decreases. This is a hysteresis loop different from conventional transistors.

(98) Subsequently, it can be seen that a low resistance state is maintained when the voltage of the ion source gate electrode 540 is swept in the negative direction and then the low resistance state transitions to a high resistance state when a high negative voltage, such as approximately −10 V, is applied as the voltage of the ion source gate electrode 540.

(99) When the voltage applied to the ion source gate electrode 540 is swept in the positive direction (direction #4) in the high resistance state, an electric current between the source electrode 570 and the drain electrode 565 is returned to an initial position, i.e., zero when the voltage of the ion source gate electrode 540 is zero.

(100) In addition, when the voltage applied to the ion source gate electrode 540 is swept from 0 V to +1 V in the initial state and then the voltage of the ion source gate electrode 540 is swept again in the negative direction as shown in the dotted line (direction #5), a hysteresis loop shape is shown in which the low resistance state is maintained during the initial decrease in the voltage of the ion source gate electrode 540 and the source-drain current decreases significantly to zero when the voltage of the ion source gate electrode 540 reaches a specific point. The electric current between the source electrode 570 and the drain electrode 565 may vary depending on the voltage of the ion source gate electrode 540. The shape of the hysteresis loop according to the voltage of the ion source gate electrode 540 is similar.

(101) Also, even when a conductive bridge is formed or removed according to a voltage sweep of the ion source gate electrode 540 and then power applied to the device is cut off, the state of the conductive bridge in the ion channel layer 560 is maintained. Subsequently, when power is supplied to the device again, an electric current corresponding to stored data may be obtained because the state of the conductive bridge is maintained. Accordingly, by adjusting the voltage applied to the ion source gate electrode 540 of the vertical atomic transistor of the present invention, it is possible to use the vertical atomic transistor as a multi-level non-volatile memory device.

(102) It should be understood that the embodiments disclosed herein are merely illustrative and are not intended to limit the scope of the invention. It will be apparent to those skilled in the art that other modifications based on the technical spirit of the present invention, in addition to the embodiments disclosed herein, can be practiced.