Composite material, electrode film and method for producing the same, electrode terminal and method for producing the same, substrate and method for producing the same, and bonding material and method for producing substrate by bonding split parts together with bonding material

Abstract

Provided are a composite material that has lower volume resistivity in comparison with SiC, SiC—Si, and the like, which are materials for forming constituent elements of an EHC, has low temperature dependence of volume resistivity, and thus is able to form a constituent element of a high-performance EHC; an electrode film, an electrode terminal, and a honeycomb substrate that are constituent elements of an EHC formed with such composite material, and a method for producing them. The composite material contains MoSi.sub.2 and at least one of Si or SiC, and is a material for forming a constituent element of an electrically heated catalytic converter. An electrode film 2, an electrode terminal 3, and a substrate 1 are produced from such composite material.

Claims

1. An electrode film provided on a surface of a honeycomb substrate with a catalyst coating layer, the electrode film being formed of a composite material comprising MoSi.sub.2 and at least one of Si or SiC, the electrode film being a constituent element of an electrically heated catalytic converter, wherein a content of MoSi.sub.2 of the electrode film is greater than 35 mass % of the electrode film, and the volume resistivity of the electrode film is lower than or equal to 1/1000 of the volume resistivity of the honeycomb substrate.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a schematic view illustrating Embodiment 1 of an electrically heated catalytic converter (EHC) having an electrode film, an electrode terminal, and a substrate each formed of a composite material of the present invention.

(2) FIG. 2(a) is a perspective view illustrating a flow of applied current, and FIG. 2(b) is a cross-sectional view illustrating a flow of applied current.

(3) FIG. 3 is a schematic view illustrating Embodiment 2 of an electrically heated catalytic converter (EHC).

(4) FIG. 4 is a schematic view illustrating Embodiment 3 of an electrically heated catalytic converter (EHC).

(5) FIG. 5: the upper diagram is an XRD diagram of Composition No. 2 (i.e., MoSi.sub.2/SiC/Si composite material) baked at 1500° C., and the lower diagram is an XRD diagram of Composition No. 5 (i.e., MoSi.sub.2/SiC/Si composite material) baked at 1500° C.

(6) FIG. 6(a) is an XRD diagram of the surface of a baked body of Composition No. 2.

(7) FIG. 6(b) is an XRD diagram of the surface of a baked body of Composition No. 5.

(8) FIG. 7 are XRD diagrams of baked bodies of Compositions No. 12, No. 13, and No. 14 (i.e., MoSi.sub.2/Si composite materials) in this order.

(9) FIG. 8 are diagrams showing the relationship between the heat treatment time and a change in weight of each of Compositions No. 12, 13, and 14; specifically, the upper diagram shows a case where the heat treatment temperature is 950° C. and the lower diagram shows a case where the heat treatment temperature is 1000° C.

(10) FIG. 9(a) are XRD diagrams of the surfaces of Composition No. 13 and Composition No. 14.

(11) FIG. 9(b) are XRD diagrams of the surfaces of Composition No. 13 and Composition No. 14.

(12) FIG. 10 is a diagram showing the states of Mo—Si-based materials.

(13) FIG. 11(a) are XRD diagrams of the polished surfaces of the cross-sections of Composition No. 13 and Composition No. 14.

(14) FIG. 11(b) are XRD diagrams of the polished surfaces of the cross-sections of Composition No. 13 and Composition No. 14.

(15) FIG. 12(a): the upper diagram is an XRD diagram obtained by enlarging the intensity scale at the ordinate axis of diffraction rays on the low-angle side of Composition No. 13 before subjected to oxidation treatment, and the lower diagram is an XRD diagram obtained by enlarging the intensity scale at the ordinate axis of diffraction rays on the low-angle side of Composition No. 13 after subjected to oxidation treatment.

(16) FIG. 12(b): the upper diagram is an XRD diagram obtained by enlarging the intensity scale at the ordinate axis of diffraction rays on the low-angle side of Composition No. 14 before subjected to oxidation treatment, and the lower diagram is an XRD diagram obtained by enlarging the intensity scale at the ordinate axis of diffraction rays on the low-angle side of Composition No. 14 after subjected to oxidation treatment.

(17) FIG. 13(a) is a diagram showing the relationship between the temperature and the volume resistivity of each of Compositions No. 1 to No. 4.

(18) FIG. 13(b) is a diagram showing the relationship between the temperature and the volume resistivity of Compositions No. 5 to No. 8.

(19) FIG. 14(a) is a diagram showing the relationship between the content of MoSi.sub.2 and the volume resistivity of each of Compositions No. 1 to No. 8 at room temperature.

(20) FIG. 14(b) is a diagram showing the relationship between the content of MoSi.sub.2 and the volume resistivity of each of Compositions No. 1 to No. 8 at 600° C.

(21) FIG. 15(a) is a diagram showing the relationship between the heat treatment time and the volume resistivity of each of Compositions No. 1 to No. 4 subjected to heat treatment at 1000° C. (a case at room temperature).

(22) FIG. 15(b) is a diagram showing the relationship between the heat treatment time and the volume resistivity of each of Compositions No. 5 to No. 8 subjected to heat treatment at 1000° C. (a case at room temperature).

(23) FIG. 16(a) is a diagram showing the relationship between the heat treatment time and the volume resistivity of each of Compositions No. 1 to No. 4 subjected to heat treatment at 1000° C. (a case at 600° C.).

(24) FIG. 16(b) is a diagram showing the relationship between the heat treatment time and the volume resistivity of each of Compositions No. 5 to No. 8 subjected to heat treatment at 1000° C. (a case at 600° C.).

(25) FIG. 17(a) is a diagram showing the relationship between the temperature and the volume resistivity of Composition No. 1 subjected to heat treatment at 1000° C. and of Composition No. 1 not subjected to heat treatment.

(26) FIG. 17(b) is a diagram showing the relationship between the temperature and the volume resistivity of Composition No. 2 subjected to heat treatment at 1000° C. and of Composition No. 2 not subjected to heat treatment.

(27) FIG. 17(c) is a diagram showing the relationship between the temperature and the volume resistivity of Composition No. 3 subjected to heat treatment at 1000° C. and of Composition No. 3 not subjected to heat treatment.

(28) FIG. 17(d) is a diagram showing the relationship between the temperature and the volume resistivity of Composition No. 4 subjected to heat treatment at 1000° C. and of Composition No. 4 not subjected to heat treatment.

(29) FIG. 17(e) is a diagram showing the relationship between the temperature and the volume resistivity of Composition No. 5 subjected to heat treatment at 1000° C. and of Composition No. 5 not subjected to heat treatment.

(30) FIG. 17(f) is a diagram showing the relationship between the temperature and the volume resistivity of Composition No. 6 subjected to heat treatment at 1000° C. and of Composition No. 6 not subjected to heat treatment.

(31) FIG. 17(g) is a diagram showing the relationship between the temperature and the volume resistivity of Composition No. 7 subjected to heat treatment at 1000° C. and of Composition No. 7 not subjected to heat treatment.

(32) FIG. 17(h) is a diagram showing the relationship between the temperature and the volume resistivity of Composition No. 8 subjected to heat treatment at 1000° C. and of Composition No. 8 not subjected to heat treatment.

(33) FIG. 18(a) is a diagram showing the relationship between the temperature and the volume resistivity of each of Compositions No. 12, 13, and 14 subjected to heat treatment at 1250° C. for 1 hour.

(34) FIG. 18(b) is a diagram showing the relationship between the temperature and the volume resistivity of each of Compositions No. 12, 13, and 14 subjected to heat treatment at 1350° C. for 4 hours.

(35) FIG. 18(c) is a diagram showing the relationship between the temperature and the volume resistivity of each of Compositions No. 12, 13, and 14 subjected to heat treatment at 1400° C. for 4 hours.

(36) FIG. 19(a) is a diagram showing the relationship between the content of MoSi.sub.2 and the volume resistivity at room temperature of each of Compositions No. 12, No. 13, and No. 14 subjected to heat treatment at 1250° C. for 1 hour, subjected to heat treatment at 1350° C. for 4 hours, and subjected to heat treatment at 1400° C. for 4 hours.

(37) FIG. 19(b) is a diagram showing the relationship between the content of MoSi.sub.2 and the volume resistivity at 600° C. of each of Compositions No. 12, No. 13, and No. 14 subjected to heat treatment at 1250° C. for 1 hour, subjected to heat treatment at 1350° C. for 4 hours, and subjected to heat treatment at 1400° C. for 4 hours.

(38) FIG. 20 is a diagram showing the relationship between the content of MoSi.sub.2 and the four-point flexural strength at room temperature of each of Compositions No. 1 to No. 8 baked at 1500° C. for 4 hours.

(39) FIG. 21 is a diagram showing the relationship between the content of MoSi.sub.2 and the four-point flexural strength at room temperature and at 900° C. of each of Compositions No. 1 to No. 8 baked at 1500° C. for 4 hours.

(40) FIG. 22 is a diagram showing the relationship between the heat treatment temperature and the flexural strength of each of Compositions No. 12, No. 13, and No. 14 subjected to heat treatment at 1250° C. for 1 hour, subjected to heat treatment at 1350° C. for 4 hours, and subjected to heat treatment at 1400° C. for 4 hours.

(41) FIG. 23 is a diagram showing a micropore distribution curve of a baked body of Composition No. 2.

(42) FIG. 24(a) is a diagram showing the relationship between the heat treatment time in the atmosphere at 1000° C. and the rate of weight increase of each of Compositions No. 1 to No. 4.

(43) FIG. 24(b) is a diagram showing the relationship between the heat treatment time in the atmosphere at 1000° C. and the rate of weight increase of each of Compositions No. 5 to No. 8.

(44) FIG. 25 is a diagram showing the relationship between the content of MoSi.sub.2 and the rate of weight increase of each of Compositions No. 1 to No. 8 after subjected to heat treatment in the atmosphere at 1000° C. for 192 hours.

(45) FIG. 26 is a diagram showing the relationship between the content of SiC and the rate of weight increase of each of Compositions No. 1 to No. 8 after subjected to heat treatment in the atmosphere at 1000° C. for 192 hours.

(46) FIG. 27 is a diagram illustrating a summary of semi-quantitative analysis that is performed based on the peak-length ratio.

(47) FIG. 28(a) show XRD diagrams of the insides of baked bodies of Composition No. 2 (i.e., MoSi.sub.2/SiC/Si composite material).

(48) FIG. 28(b) show XRD diagrams of the insides of baked bodies of Composition No. 5 (i.e., MoSi.sub.2/SiC/Si composite material).

(49) FIG. 29 is a diagram showing the diffraction peak ratio (a/b) of an unprocessed product and an oxidized product of SiO.sub.2/MoSi.sub.2.

(50) FIG. 30(a) is a diagram showing the relationship between the temperature and expansion of a baked body of Composition No. 1.

(51) FIG. 30(b) is a diagram showing the relationship between the temperature and expansion of a baked body of Composition No. 2.

(52) FIG. 30(c) is a diagram showing the relationship between the temperature and expansion of a baked body of Composition No. 3.

(53) FIG. 30(d) is a diagram showing the relationship between the temperature and expansion of a baked body of Composition No. 4.

(54) FIG. 30(e) is a diagram showing the relationship between the temperature and expansion of a baked body of Composition No. 5.

(55) FIG. 30(f) is a diagram showing the relationship between the temperature and expansion of a baked body of Composition No. 6.

(56) FIG. 30(g) is a diagram showing the relationship between the temperature and expansion of a baked body of Composition No. 7.

(57) FIG. 30(h) is a diagram showing the relationship between the temperature and expansion of a baked body of Composition No. 8.

(58) FIG. 31 is a diagram showing the relationship between the content of MoSi.sub.2 and the thermal expansion coefficient of each of Compositions No. 1 to 8.

(59) FIG. 32 is a diagram showing the relationship between the content of MoSi.sub.2 and the average thermal expansion coefficient of a MoSi.sub.2/Si composite material baked at 1400° C. for 4 hours.

DESCRIPTION OF EMBODIMENTS

(60) Hereinafter, embodiments of an electrically heated catalytic converter (EHC) that has an electrode film, an electrode terminal, and a substrate each formed of a composite material, and a method for producing an electrode film and the like will be described with reference to the drawings. In addition, embodiments of an EHC with a substrate will also be described, the substrate having split parts, which are formed of composite materials, bonded together with a bonding material that is also formed of a composite material. Although the drawings illustrate examples in which each of an electrode film, an electrode terminal, and a substrate is formed of a composite material of the present invention, it is needless to mention that the EHC may also be the one in which one or two of such constituent elements is/are formed of a composite material of the present invention.

Embodiment 1 of Electrically Heated Catalytic Converter

(61) FIG. 1 is a schematic view illustrating Embodiment 1 of an electrically heated catalytic converter (EHC) having an electrode film, an electrode terminal, and a substrate each formed of a composite material of the present invention.

(62) An electrically heated catalytic converter 10 shown in FIG. 1 is incorporated in an exhaust gas exhaust system, more specifically, in an exhaust system in which an engine (not shown), the electrically heated catalytic converter 10 (i.e., EHC), a three-way catalytic converter (not shown), and a sub-muffler and a main muffler (not shown) are sequentially arranged and mutually connected with system pipes. When the engine is started, a noble-metal catalyst that forms the electrically heated catalytic converter 10 is heated to a predetermined temperature as soon as possible, so that exhaust gas circulated from the engine is purified with the noble-metal catalyst, while exhaust gas that has not been fully purified with the electrically heated catalytic converter 10 is purified with a three-way catalytic purifier that is located downstream of the electrically heated catalytic converter 10.

(63) The electrically heated catalytic converter 10 generally includes a metal outer tube 6 (i.e., metal casing), a honeycomb substrate 1 that is fixed to the hollow space of the outer tube 6 via a mat (a holding member; not shown) and has a catalyst coating layer (not shown) on the surface of a cell wall 1a, a pair of electrode films 2,2 that are arranged on the surface of the substrate 1 and form a pair of electrodes, external electrodes 4,4 mounted on the respective electrode terminals 3,3, and an external circuit 5 that includes a cable 51, which connects the external electrodes 4,4, and a power supply 5b provided on the cable 5a.

(64) The outer tube 6 may have any shape as long as it is a cylindrical shape with a hollow space that can accommodate the substrate 1 with a heat-generating property therein. Thus, an outer tube with a cylindrical shape, a polygonal cylindrical shape, or the like can be applied in accordance with the shape of the substrate 1 accommodated therein.

(65) The substrate 1 has formed therein an exhaust gas flow channel with a honeycomb structure that includes a number of cell walls 1a, and a catalyst coating layer (not shown) is formed on each cell wall 1a. The catalyst coating layer is obtained by causing a platinum-group element, such as palladium (Pd), rhodium (Rh), or platinum (Pt), a platinum-group element compound, noble metal, or a compound thereof to be supported on oxide such as alumina (Al.sub.2O.sub.3) or ceria-zirconia composite oxide (CeO.sub.2—ZrO.sub.2), and adjusting them with an alumina sol or water to obtain slurry, and then applying the slurry to the skeleton of the substrate using an impregnation method, an ion exchange method, a sol-gel method, a wash-coat method, or the like.

(66) Exhaust gas that has flowed from the upstream side of the exhaust gas exhaust system (in the x-direction) is purified by an activated noble-metal catalyst during the process in which the exhaust gas circulates though the exhaust gas flow channel that includes a number of cell walls 1a. Then, the purified exhaust gas circulates toward the downstream side of the exhaust system from the electrically heated catalytic converter 10.

(67) An electrode film 2 is formed at a portion of the surface of the substrate 1 where each of a pair of upper and lower electrodes is formed, and an electrode terminal 3 is fixed on the surface of the substrate 1 via an opening 2a that is provided in the electrode film 2.

(68) An external electrode 4 is mounted on the electrode terminal 3, and the cable 5a with the power supply 5b provided thereon is connected to the two, upper and lower external electrodes 4,4, thereby forming the external circuit 5.

(69) FIG. 2a is a perspective view illustrating a flow of applied current, and FIG. 2b is a cross-sectional view illustrating a flow of applied current. When the power supply 5b is turned on to start the engine, electricity is conducted through the electrode terminals 3,3 located at the center of the substrate 1 (in the Y1 direction), thereby forming, as shown in FIG. 2b, a path that allows current to flow through a channel across the diameter in the cross-section of the substrate 1 (in the Y5 direction), and a path that allows current to flow linearly in the cross-section of the substrate 1 (in the Y6 direction) via the electrode film 2 around the electrode terminal 3 (in the Y2 direction), and allows current to circulate through the opposite electrode terminal 3 (in the Y4 direction) via the opposite electrode film 2 (in the Y3 direction).

(70) As described above, the electrode film 2 has a function of diffusing current, and is adapted to conduct an equal amount of electricity across the entire substrate 1 as soon as possible, and thus diffuse and rectify an equal amount of current.

(71) It should be noted that an insulating mat (not shown) interposed between the outer tube 6 and the substrate 1 can be formed with a ceramic fiber sheet that contains alumina or the like that is excellent not only in the insulating property, but also in the heat resistance property and strength.

Embodiment 2 of Electrically Heated Catalytic Converter

(72) FIG. 3 is a schematic view illustrating Embodiment 2 of the electrically heated catalytic converter (EHC). An electrically heated catalytic converter 10A shown in FIG. 3 has formed thereon electrode films that include two types of electrode films 2A,2B with different resistance. An electrode film with relatively low resistance is used for the electrode film 2A on the center side on the electrode terminal side 3.

(73) As the electrode film 2A on the electrode terminal 3 side into/from which current flows is adjusted to have relatively lower resistance than the electrode film 2B on the outer side, diffusion of current across a wide range can be promoted.

Embodiment 3 of Electrically Heated Catalytic Converter

(74) FIG. 4 is a schematic view illustrating Embodiment 3 of an electrically heated catalytic converter (EHC). An electrically heated catalytic converter 10B shown in FIG. 4 is obtained by bonding the end portions of eight split parts 1A to be bonded using a bonding material 7 formed of a composite material.

(75) When the composite materials of both the bonding material 7 and the split parts 1A are adjusted so that the bonding material 7 and the split parts 1A have about the same volume resistivity, the entire substrate can be surely and uniformly heated. In addition, when the composite materials are adjusted so that the thermal expansion coefficient of the bonding material 7 becomes less than or equal to those of the split parts 1A, the amount of heat deformation of the split parts of the substrate against thermal stress can be reduced, whereby the reliability of bonding can be ensured.

(76) (Composite Materials, and Electrode Film, Electrode Terminal, Substrate, and Bonding Material Produced with Such Composite Materials)

(77) Next, composite materials that are materials for producing an electrode film, an electrode terminal, a substrate, and a bonding material, the performance of an electrode film, an electrode terminal, a substrate, and a bonding material produced with such composite materials, and a method for producing them will be described in detail.

(78) [Regarding Composite Materials]

(79) Each of materials for producing an electrode film, an electrode terminal, and a substrate, which are constituent elements of an EHC, is a composite material containing MoSi.sub.2 and at least one of Si or SiC, and is a material for forming each constituent element of an electrically heated catalytic converter.

(80) More specifically, examples of such composite materials include a composite material of SiC and MoSi.sub.2, a composite material of Si and MoSi.sub.2 (hereinafter referred to as a binary composite material), and a composite material of SiC, Si, and MoSi.sub.2 (hereinafter referred to as a ternary composite material).

(81) Each of such composite materials basically contains a mixture of powder of each component. Such mixed powder is applied as slurry and is then baked, or a raw material of such mixed powder is molded and is then baked, for example, to produce a constituent element of an EHC.

(82) When a variety of constituent elements of an EHC is produced with such composite material, an electrode film and an electrode terminal with low volume resistivity can be produced, so that a honeycomb substrate with low temperature dependence of volume resistivity can be produced. For example, as the collector functions of the electrode film and the electrode terminal improve, the amount of noble metal catalyst used can be reduced in comparison with that of the currently available EHC, resulting in a significant reduction of the production cost. Further, as the temperature dependence of the substrate is reduced, power to be applied can be controlled more simply and easily.

(83) The inventors produced a variety of binary composite materials, such as a composite material of SiC and MoSi.sub.2 and a composite material of Si and MoSi.sub.2, and ternary composite materials, such as a composite material of SiC, Si, and MoSi.sub.2, and measured the physical properties of such composite materials. Table 1, Table 2, and Table 3 below show the measurement results of the composite materials.

(84) It should be noted that the variety of physical property values greatly influence the conditions of the production process in which the composite materials are used. Thus, the measurement results herein are merely described as examples.

(85) TABLE-US-00001 TABLE 1 Composite Material of Si and MoSi.sub.2 Baked Body Baked Baked Four-Point Body Body MoSi.sub.2/Si Flexural Thermal Volume Baked Upper: Strength Expansion Resistivity Body Compo- Volume % (Room Coefficient (Ω cm) Volume sition Lower: Temperature) ×10.sup.−6 (Room Density No. Mass % (MPa) (cm/° C.) Temperature) (g/cm.sup.3) — 100/0  8.3 2.2 × 10.sup.−5 100/0   3 90/10 58 6.7 8.4 × 10.sup.−5 3.6 96/4  11 60/40 11 6.5 5.8 × 10.sup.−3 2.3 80/20 12 50/50 17 6.1 2.4 × 10.sup.−3 2.5 73/27 13 40/60 13 5.7 4.6 × 10.sup.−2 2.2 64/36 14 30/70 10 5.2 4.0 × 10.sup.−3 1.9 54/46 15 20/80 25 5.1 5.0 1.8 40/60 16 15/85 24 4.8 1.2 × 10 1.7 32/68 17 10/90 21 4.6 2.5 × 10 1.6 23/77 —  0/100 3.9 1000 or less  0/100

(86) TABLE-US-00002 TABLE 2 Composite Material of SiC, Si and MoSi.sub.2 Baked Body Baked Baked MoSi.sub.2/ Four-Point Body Body SiC/Si Flexural Thermal Volume Baked Upper: Strength Expansion Resistivity Body Compo- Volume % (Room Coefficient (Ω cm) Volume sition Lower: Temperature) ×10.sup.−6 (Room Density No. Mass % (MPa) (cm/° C.) Temperature) (g/cm.sup.3) 2 40/30/30 23 7.3 2.2 × 10.sup.−3 2.7 60/23/17 4 45/45/10 12 6.2 1.5 × 10.sup.−2 2.4 63/32/5  5 50/40/10 16 5.7 5.7 × 10.sup.−3 2.5 67/28/5  6 60/30/10 27 5.6 7.0 × 10.sup.−4 2.7 75/20/5  7 70/20/10 34 5.4 3.6 × 10.sup.−4 3.1 83/12/5  8 80/10/10 51 5.3 1.0 × 10.sup.−4 3.3 90/6/4 

(87) TABLE-US-00003 TABLE 3 Composite Material of SiC, and MoSi.sub.2 Baked Body Baked Baked MoSi.sub.2/ Four-Point Body Body SiC Flexural Thermal Volume Baked Upper: Strength Expansion Resistivity Body Compo- Volume % (Room Coefficient (Ω cm) Volume sition Lower: Temperature) ×10.sup.−6 (Room Density No. Mass % (MPa) (cm/° C.) Temperature) (g/cm.sup.3) — 100/0  8.3 2.2 × 10.sup.−5 100/0  21 70/30 32 7.6 1.0 × 10.sup.−3 2.3 82/18 22 60/40 25 7.3 6.0 × 10.sup.−3 2.7 74/26 1 50/50 14 7.8 1.1 × 10.sup.−3 2.5 66/34 23 40/60 12 6.5 2.0 × 10.sup.−1 3.1 56/44 24 30/70 15 6.1 1.0 2.9 45/55 25 25/75 21 5.9 2.5 3.1 34/66 —  0/100 4.5 10000 or less  0/100
[Regarding Electrode Film]

(88) First, a method for producing an electrode film will be described. To be brief, this production method includes preparing the aforementioned binary or ternary composite material, making the composite material into slurry, applying the slurry to the surface of a substrate, drying the slurry and degreasing a solvent that forms the slurry, and baking the slurry to produce an electrode film on the surface of the substrate. The method will be hereinafter described in detail.

(89) Each of MoSi raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., about 2 μm), SiC raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., about 2 μm), and Si raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., about 1 μm) is weighed by a predetermined amount to produce a composite material that is uniformly mixed powder. It should be noted that the average grain size of each powder is not limited to several μm, and may be greater than or less than such value.

(90) Next, an organic binder (i.e., PVA) is added into the mixed powder, and water is used as a solvent to produce slurry.

(91) In order to mold an electrode film with a predetermined shape on a substrate, the substrate is coated with the slurry after it is masked. As the coating method herein, screen printing, bat-printing, brushing, or the like can be used. The viscosity and the like of the slurry are adjusted to adjust the film state such as the film thickness. It should be noted that when an electrode with a combined structure of an electrode film and an electrode terminal is molded as an electrode structure, the slurry may be applied and stuck such that it is interposed at the interface between the electrode terminal and the substrate so as to bond them together. Herein, in regard to the adjustment of the film thickness, an electrode film formed from a composite material containing MoSi.sub.2 has an advantage in that the thickness of the film can be reduced. This is due to the fact that the volume resistivity is at an extremely low level of 8.4×10.sup.−5 (Ωcm) (Composition No. 3) to 5.7×10.sup.−3 (Ωcm) (Composition No. 5). Such volume resistivity allows formation of an electrode film as thin as about 10 to 150 μm. When the thickness of the electrode film is reduced as described above, a reduction in the thermal stress can be expected. Further, as an electrode film formed from a composite material containing MoSi.sub.2 has a passivation formed on the surface thereof, oxidation resistance can also be expected, though it is not related to a reduction in the film thickness.

(92) After the electrode film produced with the aforementioned method is applied to the surface of the substrate, water is evaporated at 100° C. for drying purposes to temporarily join the electrode film to the substrate.

(93) Using the substrate with the produced electrode film thereon, degreasing is performed to remove the organic binder contained in the electrode. The degreasing conditions herein depend on the properties of the organic binder used, but degreasing is performed in a reduced-pressure atmosphere in the range of about 300 to 600° C.

(94) Next, baking is performed on the substrate with the degreased electrode film, so that the electrode film is baked onto and bonded to the substrate. As the baking conditions herein, baking is performed under an inert atmosphere (e.g., under an Ar gas atmosphere) and, in a system that uses Si, at a temperature that is less than the melting point of Si (1414° C.) so that the electrode film is bonded to the substrate through welding of Si (e.g., in the range of 1000 to 1400 (° C.), or desirably in the range of 1200 to 1300 (° C.)). Meanwhile, in a system that does not use Si, baking is performed at a temperature that promotes sintering, for example, at 1200 to 1500° C.

(95) Next, functions and performance that are required of the electrode film will be described. As the requirements for the electrode film, it is necessary to ensure (1) the function of a collector, (2) a function of diffusing current across the entire substrate, (3) reliability of the bonding strength between the electrode film and the substrate, and (4) environmental resistance and reliability.

(96) (1) Regarding the function of a collector, the volume resistivity of the electrode film is desirably adjusted to be lower than that of the substrate. Specifically, the volume resistivity of the electrode film is adjusted to be lower than that of the substrate (several ten to several 10.sup.−1 (Ωcm)) so that the electrode film will not generate heat.

(97) (2) Regarding the function of diffusing current across the entire substrate, when a converter is supposed in which electrode terminals (i.e., cylindrical terminals) are bonded to the side faces of a cylindrical honeycomb substrate on the opposite sides thereof, for example, to diffuse and rectify an equal amount of current across the entire substrate, it is possible to, as shown in FIG. 2, diffuse current through the terminals on the opposite sides as well as the side faces and form a path that allows current to flow through the channel across the diameter in the cross-section of the substrate, and a path that allows current to flow linearly in the cross-section of the substrate through the electrode films around the substrate. When the combined resistance of each of such paths is adjusted to an equal level, current can be rectified in the cross-section.

(98) (3) Regarding the reliability of the bonding strength between the electrode film and the substrate, in order to ensure that the strength of the electrode film is at a level greater than or equal to that of the substrate, the four-point flexural strength of the electrode film is adjusted to be greater than or equal to that of the substrate (several 10 (MPa)), for example. When the strength is evaluated using component parts, a peel strength test is performed on the electrode film to check if a breakdown of the base material starts from the substrate.

(99) In addition, in order to ensure the bonding strength against thermal stress, the thermal expansion coefficient of the electrode film is preferably set equal to that of the substrate. For example, when the substrate has a thermal expansion coefficient of 4.5×10.sup.−6 (cm/° C.), film materials are adjusted so that the thermal expansion coefficient of the electrode film is in the range of 4.5 to 8.0×10.sup.−6 (cm/° C.).

(100) (4) Regarding the requirement of ensuring the environmental resistance and reliability, a material whose change in the volume resistance, when continuously exposed to the maximum temperature (about 950° C.) at which the electrode film is used as an EHC for a predetermined time, can be suppressed is applied to suppress a change in the volume resistance under a high-temperature oxidation atmosphere. In practice, it is desirable to select an applicable material in consideration of the volume resistivity of the electrode film that is required from the applied substrate.

(101) Next, examples of the application of the electrode film will be described.

(102) <Application to EHC of HV or PHV>

(103) An EHC for HV or PHV is driven with a power supply voltage of a divisor of 100 (V) (e.g., 400 (V)) and an applied power of several (KW) (e.g., 7 (KW)). Therefore, the substrate is required to have a resistance of several 10 (Ω) (e.g., 40 (Ω)).

(104) For example, when the resistance of the ceramic substrate is adjusted to 40 (Ω) using a material with a volume resistivity of about 5 (Ω.Math.cm), the volume resistance of each of the electrode terminal and the electrode film is preferably set lower than that of the substrate.

(105) Specifically, when the electrode film is expected to have a current diffusion effect, provided that the resistance value of the electrode film 2A at the center is lower by 1 digit or more in Embodiment 2 shown in FIG. 3, and the resistance value of the electrode film is adjusted by taking the paths in the substrate into consideration, the volume resistivity of the electrode film 2B on the outer side is preferably less than or equal to that of the substrate.

(106) As the composite materials that satisfy the aforementioned conditions among the composite materials shown in Tables 1 to 3 above, No. 1 to 8, No. 11 to 14, and No. 21 to 23 are preferable as the electrode film 2A at the center, while No. 15, 16, and 17 are preferable as the electrode film 2B on the outer side (for adjusting the paths).

(107) <Application to EHC of Gasoline Vehicles or Diesel Vehicles>

(108) In gasoline vehicles or diesel vehicles, an electrode film is driven with a power supply voltage of a divisor of 10 (V) (e.g., 48 (V)) and an applied power of several (KW) (e.g., 4 (KW)). Therefore, the substrate is required to have a resistance of less than or equal to 1 (Ω) (e.g., 0.5 (Ω)).

(109) For example, when the resistance of the ceramic substrate is adjusted to 0.5 (Ω) using a material with a volume resistivity of about 0.05 to 0.005 (Ω.Math.cm), the volume resistance of each of the electrode terminal and the electrode film is preferably set lower than that of the substrate.

(110) Specifically, when the electrode film is expected to have a current diffusion effect, provided that the resistance value of the electrode film 2A at the center is lower by 1 digit or more in Embodiment 2 shown in FIG. 3, and the resistance value of the electrode film is adjusted by taking the paths in the substrate into consideration, the volume resistivity of the electrode film 2B on the outer side is preferably less than or equal to that of the substrate.

(111) As the composite materials that satisfy the aforementioned conditions among the composite materials shown in Tables 1 to 3 above, No. 3 and 6 to 8 are preferable as the electrode film 2A at the center, while No. 1, 2, 5, 11-13, 21, and 22 are preferable as the electrode film 2B on the outer side.

(112) [Electrode Terminal]

(113) First, a method for producing an electrode terminal will be described. To be brief, this production method includes preparing a composite material, making the composite material into slurry, spray-drying the slurry, granulating the slurry into the shape of an electrode terminal, drying the slurry and degreasing a solvent that forms the slurry, and baking the slurry to produce an electrode terminal. The method will be hereinafter described in detail.

(114) Each of MoSi raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., 6 μm), SiC raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., 11 μm), and Si raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., 8 μm) is weighed by a predetermined amount, and then, the powder is uniformly mixed through a wet-process. It should be noted that the average grain size of each powder is not limited to several μm, and may be greater than or less than such value.

(115) Next, an organic binder (i.e., PVA) is added into the obtained mixed powder, and water is used as a solvent to produce slurry. Using the slurry, spherical granulated powder with an average grain size D50 of about 50 (μm) is produced with a spray dryer under predetermined conditions. It should be noted that the average grain size of the granulated powder is not limited to about 50 μm, and it is acceptable as long as particles with excellent moldability are used.

(116) Next, the obtained granulated powder is molded into an electrode terminal with a predetermined shape. Such molding is performed through a die-press method, an extrusion molding method, or the like. The shape of the electrode terminal may be a cylindrical shape, a prismatic shape, an elliptic cylindrical shape, or the like, and may be any shape as long as it can exhibit a current collection function with respect to the shape of the honeycomb substrate.

(117) Degreasing is performed to remove the organic binder in the obtained molded body. The degreasing conditions depend on the properties of the organic binder used, but degreasing is performed in a reduced-pressure atmosphere in the range of about 300 to 600 (° C.), for example.

(118) The degreased molded body is baked to produce a sintered body of an electrode terminal with a desired shape. As the baking conditions herein, baking is performed under, after the pressure is reduced, an Ar gas atmosphere and, in a system that uses Si, at a temperature of 1350 to 1400° C., which is less than the melting point of Si (1414° C.), for 4 hours. Meanwhile, in a system that does not use Si, baking is performed at a temperature of 1200 to 1500° C. that promotes sintering, for example.

(119) Next, functions and performance that are required of the electrode terminal will be described. As the requirements for the electrode terminal, it is necessary to ensure (1) the function of a collector, (2) the strength of the terminal, (3) reliability of the bonding strength between the electrode terminal and the substrate, and (4) environmental resistance and reliability.

(120) (1) Regarding the function of a collector, the volume resistivity of the electrode terminal is desirably adjusted to be lower than that of the substrate. Specifically, the volume resistivity of the electrode terminal is adjusted to be less than that of the substrate (several ten to several 10.sup.−1 (Ωcm)) so that the electrode film will not generate heat.

(121) (2) Regarding the requirement of ensuring the terminal strength, the electrode terminal should have sufficient strength against a variety of stress that may occur when the electrode terminal is used under the actual environment, assembled, or fastened to a cable via an external electrode. A baked body is used for the electrode terminal. It is acceptable as long as the strength of the material of the electrode terminal is maintained at a level greater than or equal to that of a porous honeycomb substrate. For example, it is acceptable as long as the four-point flexural strength of the electrode terminal is greater than or equal to 10 (Mpa) that is the four-point flexural strength of the honeycomb substrate.

(122) (3) Regarding the requirement of ensuring the bonding strength between the electrode terminal and the honeycomb substrate, it is necessary to reduce thermal stress that may be generated due to a difference in the thermal expansion coefficients of the substrate and the electrode terminal. For example, when a substrate with a thermal expansion coefficient of 4.5×10.sup.−6 (cm/° C.) is used, the material of the electrode terminal is preferably adjusted so that the thermal expansion coefficient thereof is in the range of about 4.5×10.sup.−6 to 8.0×10.sup.−6 (cm/° C.).

(123) (4) Regarding the requirement of ensuring the function under the actual environment, it is desired that a change in the volume resistivity that would occur due to oxidation at high temperature be small. For example, when the maximum temperature at which the EHC is used is about 950° C., it is preferable to select an electrode terminal material whose volume resistivity will hardly change even after it is subjected to heat treatment in the atmosphere at 950° C. for a predetermined time.

(124) <Application to EHC of HV or PHV>

(125) The electrode terminal is driven under the same conditions as the electrode film. In such a case, the honeycomb substrate is required to have a resistance of several 10Ω, for example, 40Ω. Thus, the resistance of the electrode terminal is desirably lower than that of the substrate by 1 digit or more.

(126) As the composite materials that satisfy the aforementioned conditions among the composite materials shown in Tables 1 to 3 above, No. 1 to 8, No. 11 to 14, and No. 21 to 23 are preferable.

(127) <Application to EHC of Gasoline Vehicles or Diesel Vehicles>

(128) The electrode terminal is driven under the same conditions as the electrode film. In such a case, the honeycomb substrate is required to have a resistance of about 10.sup.−1 (Ω), for example, 0.5Ω. Thus, the resistance of the electrode terminal is desirably lower than that of the substrate by 1 digit or more.

(129) As the composite materials that satisfy the aforementioned conditions among the composite materials shown in Tables 1 to 3 above, No. 3 and No. 6 to 8 are preferable.

(130) [Regarding Substrate]

(131) First, a method for producing a substrate will be described. To be brief, this production method includes preparing a composite material, mixing the composite material with water, a binder, and a lubricant to form a raw material, molding the raw material into a honeycomb structure, degreasing the solvent, and baking the slurry to produce a honeycomb substrate. The method will be hereinafter described in detail.

(132) Each of MoSi raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., 6 μm), SiC raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., 11 μm), and Si raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., 8 μm) is weighed by a predetermined amount, and then, the powder is uniformly mixed through a wet-process. It should be noted that the average grain size of each powder is not limited to several μm, and it is acceptable as long as the grain size that allows the desired performance of the substrate to be obtained is selected.

(133) The obtained mixed powder is mixed with pure water added thereto using water-soluble cellulose derivative hydroxypropyl methylcellulose as an organic binder and polyalkylene polyol as a lubricant, for example, with shearing force applied thereto with a kneader, so that a raw material with predetermined hardness and fluidity is obtained.

(134) Next, the obtained raw material is introduced into an extruder, so that a honeycomb molded body is formed via a honeycomb molding cap at an extrusion rate of several (cm/sec) and an extrusion pressure of several (MPa).

(135) Next, after the obtained honeycomb molded body is dried, degreasing is performed to remove the organic binder. Degreasing was performed using a method of increasing the temperature from the room temperature up to 600° C. in a reduced-pressure atmosphere and then cooling the furnace. The degreased body was then baked to obtain a honeycomb baked body. The baking conditions herein were set to, after the pressure was reduced, 1200 to 1500° C. for 4 hours in an Ar atmosphere.

(136) Next, functions and performance that are required of the substrate will be described. As the requirements for the substrate, it is necessary to ensure that (1) the substrate should have a resistance value that is suitable for the intended use, (2) the substrate should have low temperature dependence of volume resistivity, and (3) the substrate should have excellent oxidation resistance and excellent resistance to thermal shock under the actual environment.

(137) (1) Regarding the requirement that the substrate should have a resistance value that is suitable for the intended use, a honeycomb substrate that has a resistance value of 0.1 to 1000Ω is preferably used as an example of the resistance value that is suitable for the intended use.

(138) (2) Regarding the requirement that the substrate should have low temperature dependence of volume resistivity, it is desirable that, as the honeycomb substrate generates heat, the temperature dependence of the resistance value of the honeycomb be low in the temperature range in which the electrically heated catalytic converter is used, that is, in the temperature range of −30 to 950° C., and a change in the resistance value is desirably within one digit. When the temperature dependence of the resistance value is low, power to be applied can be controlled more simply and easily.

(139) (3) Under the actual environment, it is indispensable to suppress oxidation of the substrate in a high-temperature oxidation atmosphere and reduce a change in the volume resistivity of the substrate. For example, when the maximum temperature in which the EHC is used is about 950° C., it is preferable to select a material whose volume resistivity will hardly change even after it is subjected to heat treatment in the atmosphere at 950° C. for a predetermined time. In addition, as the honeycomb substrate is subjected to a temperature change due to cooling/heating cycles of high temperature and low temperature under the actual environment, the honeycomb substrate is desirably formed of a material with excellent resistance to thermal shock.

(140) <Application to EHC of HV or PHV>

(141) The substrate is driven under the same conditions as the electrode film. In such a case, the honeycomb substrate is required to have a resistance of several 10Ω, for example, 40Ω. Thus, a material with a volume resistivity of 5 Ω.Math.cm is preferably used to adjust the resistance of the honeycomb substrate to 40Ω.

(142) As the composite materials that satisfy the aforementioned conditions among the composite materials shown in Tables 1 to 3 above, No. 14 to 17 and No. 23 to 25 are preferable.

(143) <Application to EHC of Gasoline Vehicles or Diesel Vehicles>

(144) The substrate is driven under the same conditions as the electrode film. In such a case, the honeycomb substrate is required to have a resistance of about 10.sup.−1 (Ω), for example, 0.5Ω. Thus, the volume resistivity of the material of the honeycomb substrate is desirably about 0.05 to 0.005 (Ω.Math.cm).

(145) As the composite materials that satisfy the aforementioned conditions among the composite materials shown in Tables 1 to 3 above, No. 1, 2, 4, 5, 11 to 13, 21, and 22 are preferable.

(146) Table 4 below shows the physical properties of SiC/Si-based materials that contain no additives as comparative examples.

(147) TABLE-US-00004 TABLE 4 Baked Body Baked Body Thermal Expansion Volume Resistivity Composition SiC/Si Coefficient ×10.sup.−6 (Ω cm) No. (Volume %) (cm/° C.) (Room Temperature) A 100/0  4.5 10000 or less B 75/25 4.4 10000 or less C  0/100 3.9 1000 or less 

(148) Table 4 can confirm that each of substrates made of the materials of the comparative examples has high volume resistivity, and thus is difficult to be applied to a honeycomb substrate.

(149) [Bonding Material and Substrate Obtained by Bonding Split Parts Together with Bonding Material]

(150) First, a bonding material and a method for producing a substrate, which has split parts bonded together with the bonding material, will be described. To be brief, this production method includes preparing the aforementioned binary or ternary composite material, making the composite material into slurry, applying the slurry to the surfaces of the end portions of the split parts of the substrate to be bonded, causing the plurality of split parts to abut to each other at the end portions to be bonded and thus temporarily joining them, drying the slurry and degreasing a solvent that forms the slurry, and baking the slurry to produce a substrate made of the bonding material and the split parts. The method will be hereinafter described in detail.

(151) Each of MoSi raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., 2 μm), SiC raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., 2 μm), and Si raw material powder with an average grain size D of a divisor of 50 (μm) (e.g., 1 μm) is weighed by a predetermined amount to produce a composite material that is uniformly mixed powder. It should be noted that the average grain size of each powder is not limited to several μm, and may be greater than or less than such value.

(152) Next, an organic binder (i.e., PVA) is added into the mixed powder, and water is used as a solvent to produce slurry.

(153) The surfaces of the end portions of the split parts to be bonded are coated with the slurry. As the coating method herein, screen printing, bat-printing, brushing, or the like can be used. The viscosity and the like of the slurry are adjusted to adjust the thickness and the like of the bonding material. It should be noted that when bonding is performed with a wide bonding layer, it is also possible to prepare in advance a green sheet with the same composition as the bonding material using a doctor blade method, an extrusion molding method, or the like, and coat the surface of the green sheet with the slurry to form a substrate.

(154) In order to coat the surfaces of the end portions of the split parts to be bonded with the slurry produced with the aforementioned method, and bond the split parts together to temporarily join them, water is evaporated at 100° C. for drying purposes.

(155) Using the substrate made of the split parts, degreasing is performed to remove the organic binder contained in the bonding material. The degreasing conditions herein depend on the organic binder used, but degreasing is performed in a reduced-pressure atmosphere in the range of about 300 to 600° C.

(156) Next, baking is performed on the substrate that has the split parts temporarily joined together with the degreased bonding material, so that the bonding material is baked to bond the split parts together. As the baking conditions herein, baking is performed under an inert atmosphere at a temperature that is less than the melting point of Si (1414° C.), and the split parts are bonded together through welding of Si (for example, in the range of 1000 to 1400 (° C.), or desirably in the range of 1200 to 1300 (° C.)). It should be noted that the materials of the split parts may be any materials that are used for common EHCs. However, the materials of the split parts are preferably the same materials as the bonding material in order to further increase the bonding strength.

(157) Next, functions and performance that are required of the bonding material will be described. As the requirements for the bonding material, it is necessary to ensure (1) the function of a resistor, (2) reliability of the bonding strength between the bonding material and the substrate, and (3) environmental resistance and reliability.

(158) (1) Regarding the function of a resistor, the volume resistivity of the bonding material is preferably adjusted to about the same level as that of the substrate. Thus, the volume resistivity of the bonding material is adjusted to be about equal to the volume resistivity of the substrate (several ten to several 10.sup.−1 (Ωcm)). When the resistance of the bonding material is too higher than that of the substrate, the bonding layer will generate heat, and the substrate will not be heated, while when the resistance of the bonding material is lower than that of the substrate, the temperature at the portion of the bonding layer will not increase. Thus, it would be impossible to uniformly heat the entire substrate in any case.

(159) (2) Regarding the reliability of the bonding strength between the bonding material and the substrate, in order to ensure that the strength of the bonding material is at a level greater than or equal to that of the substrate, the four-point flexural strength of the bonding material is adjusted to be greater than or equal to that of the substrate (several 10 (MPa)), for example. When the strength is evaluated using component parts, a peel strength test is performed on the bonding material to check if a breakdown of the base material starts from the substrate.

(160) In addition, in order to ensure the bonding strength against thermal stress and also reduce the amount of heat deformation of the split parts of the substrate, the thermal expansion coefficient of the bonding material is preferably less than or equal to that of the substrate. For example, when a substrate with a thermal expansion coefficient of 4.5×10.sup.−6 (cm/° C.) is used, the bonding material is adjusted so that the thermal expansion coefficient thereof is in the range of less than 4.5×10.sup.−6 (cm/° C.).

(161) (3) Regarding the requirement of ensuring the environmental resistance and reliability, a material whose change in the volume resistance, when continuously exposed to the maximum temperature (about 950° C.) at which the bonding material is used as an EHC for a predetermined time, can be suppressed is applied to suppress a change in the volume resistance under a high-temperature oxidation atmosphere. In practice, it is desirable to select an applicable material in consideration of the volume resistivity of the bonding material that is required from the applied substrate. It should be noted that as MoSi.sub.2 forms a passivation film, a bonding material containing MoSi.sub.2 can have improved oxidation resistance.

(162) Next, examples of the application of the bonding material will be described.

(163) <Application to EHC of HV or PHV>

(164) The bonding material is driven under the same conditions as the electrode film. Therefore, the substrate is required to have a resistance of several 10 (Ω) (e.g., 40 (Ω)).

(165) For example, when the resistance of the ceramic substrate is adjusted to 40 (Ω) using a material with a volume resistivity of about 5 (Ω.Math.cm), the volume resistance of the bonding material is preferably set at about the same level as that of the substrate.

(166) As the composite materials that satisfy the aforementioned conditions among the composite materials shown in Tables 1 to 3 above, No. 15, 16, 24, and 25 are preferable.

(167) <Application to EHC of Gasoline Vehicles or Diesel Vehicles>

(168) The bonding material is driven under the same conditions as the electrode film. Therefore, the substrate is required to have a resistance of less than or equal to 1 (Ω) (e.g., 0.5 (Ω)).

(169) For example, when the resistance of the ceramic substrate is adjusted to 0.5 (Ω) using a material with a volume resistivity of about 0.05 to 0.005 (Ω.Math.cm), the volume resistance of the bonding material is preferably set at about the same level as that of the substrate.

(170) As the composite materials that satisfy the aforementioned conditions among the composite materials shown in Tables 1 to 3 above, No. 1, 2, 4, 5, 11 to 13, 21, and 22 are preferable.

(171) Next, with respect to constituent elements of an EHC that are formed with the aforementioned composite materials, a variety of analyses and experiments conducted by the inventors, as well as the results thereof will be described.

(172) [XRD Analysis and Results Thereof]

(173) In developing MoSi.sub.2/SiC/Si-based, MoSi.sub.2/SiC-based, and MoSi.sub.2/Si-based composite materials as the novel materials to be applied to an electrode terminal or an electrode film for a HV-EHC system, it is indispensable to select an optimum composition in terms of volume resistivity, thermal expansion coefficient, flexural strength, and oxidation resistance. It is also necessary to improve sinterability that utilizes solid-phase diffusion as well as bonding strength. To this end, it is ultimately necessary to perform measurement using a baked body of a composite material with each composition. The inventors have already succeeded in obtaining baked bodies of the eight types of compositions that contain two or three elements of MoSi.sub.2/SiC/Si, and evaluated the linear contraction coefficient, volume density, and relative density (see Tables 1 to 3 above). The constituent phases of the baked bodies of the eight types of compositions shown in Table 5 below are identified through XRD analysis.

(174) TABLE-US-00005 TABLE 5 (Represented in Volume %) Composition Composition Number of No. (Volume %) Components 1 MoSi.sub.2: 50 vol. %-SiC: 50 vol. % 2 2 MoSi.sub.2: 40 vol. %-SiC: 30 vol. %- 3 Si: 30 vol. % 3 MoSi.sub.2: 90 vol. %-Si: 10 vol. % 2 4 MoSi.sub.2: 45 vol. %-SiC: 45 vol. %- 3 Si: 10 vol. % 5 MoSi.sub.2: 50 vol. %-SiC: 40 vol. %- 3 Si: 10 vol. % 6 MoSi.sub.2: 60 vol. %-SiC: 30 vol. %- 3 Si: 10 vol. % 7 MoSi.sub.2: 70 vol. %-SiC: 20 vol. %- 3 Si: 10 vol. % 8 MoSi.sub.2: 80 vol. %-SiC: 10 vol. %- 3 Si: 10 vol. % (Represented in Mass %) Composition Composition Number of No. (Mass %) Components 1 MoSi.sub.2: 66 mass. %-SiC: 34 mass. % 2 2 MoSi.sub.2: 60 mass. %-SiC: 23 mass. %- 3 Si: 17 mass. % 3 MoSi.sub.2: 96 mass. %-Si: 4 mass. % 2 4 MoSi.sub.2: 63 mass. %-SiC: 32 mass. %- 3 Si: 5 mass. % 5 MoSi.sub.2: 67 mass. %-SiC: 28 mass. %- 3 Si: 5 mass. % 6 MoSi.sub.2: 75 mass. %-SiC: 20 mass. %- 3 Si: 5 mass. % 7 MoSi.sub.2: 83 mass. %-SiC: 12 mass. %- 3 Si: 5 mass. % 8 MoSi.sub.2: 90 mass. %-SiC: 6 mass. %- 3 Si: 4 mass. %
(Regarding XRD Analysis of Baked Bodies of MoSi.sub.2/SiC/Si Composite Materials)

(175) Two compositions are selected as representative examples out of the aforementioned eight types of compositions, and then, the constituent phases of the compositions baked at 1500° C. for 4 hours are identified through XRD analysis.

(176) With respect to the experimental method, preparation of raw materials, molding, degreasing, and baking conditions are the same as those described above. Baked bodies obtained under such conditions were ground in a tungsten carbide mortar through a dry-process to prepare samples for XRD analysis. The present analysis was performed on Compositions 2 and 5 in Table 5 as representative examples. Table 6 below shows the XRD analysis conditions, and FIG. 5 show the analysis results. It should be noted that the upper diagram of FIG. 5 is an XRD diagram of Composition No. 2 (i.e., MoSi.sub.2/SiC/Si composite material) baked at 1500° C., and the lower diagram is an XRD diagram of Composition No. 5 (i.e., MoSi.sub.2/SiC/Si composite material) baked at 1500° C.

(177) TABLE-US-00006 TABLE 6 Analysis Conditions Measure- Measure- Analysis ment ment Method Angles kV mA Method Step Rate DS SS RS Wide- 3 to 85 50 300 Continuous 0.02 5°/ 1 1 0.15 Angle Method Minute Method

(178) From each of the upper and lower diagrams of FIG. 5, MoSi.sub.2, SiC, Si, and trace amounts of SiO.sub.2 (cristobalite) are identified, and a difference in the diffraction peak intensity of each constituent phase, which results from the difference in composition, is recognized. However, no difference in the constituent phase is found. That is, with respect to the currently analyzed compositions baked at 1500° C., it is found that no change occurred in the phase due to reactions between starting materials. It is considered that the trace amounts of SiO.sub.2 (cristobalite) were generated due to surface oxidation of metal Si or SiC and the use of water in preparation of raw materials, and further, due to trace amounts of oxygen in the baking atmosphere. However, the amount of SiO.sub.2 generated is estimated to be very small, which is not at a level that will influence the properties.

(179) (Regarding XRD Analysis of Baked Bodies of MoSi.sub.2/SiC/Si Composite Materials Subjected to High-Temperature Oxidation Treatment)

(180) Herein, the constituent phases of products oxidized in the atmosphere are identified through XRD analysis. XRD analysis was performed on test pieces of baked bodies of Composition 2 and Composition 5, as representative examples of the eight types of compositions shown in Table 5, as well as test pieces of such baked bodies subjected to oxidation treatment in the atmosphere at 1000° C. for 192 hours. As the analysis method, baked bodies of prismatic test pieces and baked bodies subjected to oxidation treatment were fixed on holders, and the surfaces of the test pieces were irradiated with an X-ray beam with a diameter narrowed to 800 μm. On the low-angle side of 2θ=20°, the irradiated surface is an ellipse with a minor axis of 800 μm and a major axis of 3 mm. Table 7 below shows the measurement conditions of the XRD analysis, and FIGS. 6 and 7 show the analysis results. It should be noted that FIG. 6a are XRD diagrams of the surface of the baked body of Composition No. 2, and FIG. 6b are XRD diagrams of the surface of the baked body of Composition No. 5. Further, Table 8 below shows the constituent phase of each baked body identified through XRD analysis.

(181) TABLE-US-00007 TABLE 7 Diameter Measure- De- Inte- of Detector ment tector gration Vessel kV mA Collimater Position Time 2θ Range Scan Co 38 80 800 μm 20 cm 600 24° 10°-90° ω Seconds

(182) TABLE-US-00008 TABLE 8 Baking and Composition Oxidation Test Constituent No. Composition Conditions Phase 2 MoSi.sub.2: 40 vol. %- Baked at 1500° C. MoSi.sub.2, SiC, Si, SiC: 30 vol. %- for 4 hours SiO.sub.2 (Cristobalite) Si: 30 vol. % Baked at 1500° C. MoSi.sub.2, SiC, Si, for 4 hours => SiO.sub.2 (Cristobalite), Oxidation Treatment MoO.sub.2 at 1000° C. for 192 hours 5 MoSi.sub.2: 50 vol. %- Baked at 1500° C. MoSi.sub.2, SiC, Si SiC: 40 vol. %- for 4 hours Si: 10 vol. % Baked at 1500° C. MoSi.sub.2, SiC, Si, for 4 hours => SiO.sub.2 (Cristobalite), Oxidation Treatment MoO.sub.2, Mo.sub.5Si.sub.3 at 1000° C. for 192 hours

(183) FIG. 6a clarified the presence of trace amounts of SiO.sub.2 (cristobalite) in addition to MoSi.sub.2, SiC, and Si on the surface of the baked body. It is considered that the trace amounts of SiO.sub.2 (cristobalite) were generated due to surface oxidation of metal Si or SiC and the use of water in preparation of raw materials, and further, due to trace amounts of oxygen in the baking atmosphere. Meanwhile, in the oxidized product, trace amounts of MoO.sub.2 are detected in addition to MoSi.sub.2, SiC, Si, and trace amounts of SiO.sub.2 (cristobalite) as shown in the lower diagram of FIG. 6a. In addition, it is seen that the peak of SiO.sub.2 (cristobalite) is slightly increased in the oxidized product. It is considered that SiO.sub.2 (cristobalite) was generated due to oxidation of SiC or Si during high-temperature oxidation treatment of the baked body, and MoO.sub.2 was generated due to oxidation of MoSi.sub.2, but with respect to the oxidation treatment at 1000° C. for 192 hours, the amount of oxide generated is found to be smaller.

(184) Meanwhile, from FIG. 6b, MoSi.sub.2, SiC, and Si are detected on the surface of the baked body of Composition No. 5, while generation of SiO.sub.2 (cristobalite) is not recognized. Further, the lower diagram of FIG. 6b can confirm that although trace amounts of Mo.sub.5Si.sub.3, SiO.sub.2 (cristobalite), and MoO.sub.2 are generated in addition to MoSi.sub.2, SiC, and Si on the surface layer of the oxidized product, the diffraction peaks of the oxides are smaller than those of Composition No. 2. This is considered to be due to the fact that Composition No. 5 was less easily oxidized than Composition No. 2 as Composition No. 5 contains a larger amount of MoSi.sub.2 and a smaller amount of Si than Composition No. 2. In addition, the reason that Mo.sub.5Si.sub.3 is detected after the oxidation treatment is considered to be due to a reaction between MoSi.sub.2 and Si.

(185) (Regarding XRD Analysis of Baked Bodies of MoSi.sub.2/Si Composite Materials)

(186) With respect to an electrode terminal, an electrode film, and a bonding material, which are made of MoSi.sub.2/Si-based composite materials, to be applied to an EHC made of SiC/Si, the constituent phases of baked bodies obtained at 1250° C. for 1 hour, which are the bonding conditions for the electrode terminal and the electrode film, are identified through XRD analysis.

(187) As the experimental method, baked bodies of three compositions shown in Table 9 below were ground in a tungsten carbide mortar through a dry-process to prepare samples for XRD analysis. Analysis was performed under the standard conditions. FIG. 7 show the analysis results.

(188) TABLE-US-00009 TABLE 9 Composition No. MoSi.sub.2 Si 12 50 50 13 40 60 14 30 70 Composition No. MoSi.sub.2 Si 12 73 27 13 64 36 14 54 46

(189) FIG. 7 are XRD diagrams of baked bodies of Compositions No. 12, No. 13, and No. 14 (i.e., MoSi.sub.2/Si composite materials) in this order. From FIG. 7, it is found that the constituent phase of each composition contains only MoSi.sub.2 and Si that are starting materials, and it is found from the state diagram of the two-component-based material of Mo—Si that the compositions of the currently analyzed baked bodies all correspond to the two-phase coexistence region of MoSi.sub.2 and Si. Meanwhile, trace amounts of SiO.sub.2 (cristobalite), which has been detected from the sintered body of the three-component-based material of MoSi.sub.2/SiC/Si, is not recognized.

(190) (Regarding XRD Analysis of Baked Bodies of MoSi.sub.2/Si Composite Materials Subjected to Oxidation Treatment)

(191) MoSi.sub.2/Si-based composite materials, which have been developed as materials of an electrode terminal and an electrode film for an EHC, have oxidation resistance as a main property that should be noted. The upper and lower diagrams of FIG. 8 show the rate of weight increase after oxidation treatment at 950° C. for 192 hours and at 1000° C. for 192 hours, respectively. Further, it was found from the results of the volume resistivity and the rate of weight increase that a silicide baked body made of the composite material of the present invention is a conductor if the rate of weight increase after oxidation treatment is less than or equal to about 15%.

(192) That is, a change in the weight of Composition No. 14 (see Table 1) due to oxidation has increased to about 30% after the composition is subjected to oxidation treatment at 1000° C. for 192 hours, and consequently, the volume resistivity thereof has rapidly increased to 108 Ωcm, resulting in an insulator. In order to analyze such a phenomenon, the constituent phases of the surface of and the inside of silicides, which have been subjected to oxidation treatment and not subjected to oxidation treatment, are identified through XRD.

(193) As the experimental method, the phases were identified through XRD analysis by irradiating predetermined positions with X-rays. It should be noted that in order to analyze the inside of a test piece, the test piece was cut at the center, and the cut surface was polished with water to form a surface to be analyzed. Meanwhile, in order to analyze the surface of a test piece, a baked surface and an oxidized surface of the test piece were analyzed. The measurement conditions are the same as those in Table 7. Table 10 shows the specifications of the analyzed test pieces.

(194) TABLE-US-00010 TABLE 10 Composition MoSi.sub.2 Si Analyzed Oxidation No. (vol %) (vol %) Portion Treatment 13 40 60 Surface None 14 30 70 Surface None 13 40 60 Surface 1000° C. × 192 Hr 14 30 70 Surface 1000° C. × 192 Hr 13 40 60 Inside None 14 30 70 Inside None 13 40 60 Inside 1000° C. × 192 Hr 14 30 70 Inside 1000° C. × 192 Hr

(195) FIGS. 9a and 9b are XRD diagrams of the surfaces of Composition No. 13 and Composition No. 14.

(196) From the upper and lower diagrams of FIG. 9a, it is seen that the constituent phases of the compositions are the same, and MoSi.sub.2, Si, trace amounts of SiO.sub.2 (cristobalite), and trace amounts of SiC (3 C: low-temperature 3-period cubic crystals) are detected. It is speculated that SiO.sub.2 (cristobalite) has been generated due to a reaction between trace amounts of oxygen and Si during baking, and SiC has been generated due to a reaction between trace amounts of carbon and Si in the atmosphere in the furnace.

(197) Meanwhile, with respect to Composition No. 14 in FIG. 9b, MoSi.sub.2, Si, Mo.sub.5Si.sub.3, trace amounts of SiO.sub.2 (cristobalite), and trace amounts of glass phase are detected. Meanwhile, with respect to Composition No. 14 after subjected to oxidation treatment, Mo and a glass phase are detected in addition to MoSi.sub.2, Si, Mo.sub.5Si.sub.3, and trace amounts of SiO.sub.2 (cristobalite). With respect to Composition No. 14 that contains a large amount of Si, the amount of the glass phase after oxidation treatment is larger than that of Composition No. 13, and metal Mo is also detected.

(198) FIG. 10 is a diagram showing the states of Mo—Si-based materials. In the oxidation treatment at 1000° C., Si is usually preferentially oxidized than MoSi.sub.2. Thus, it is considered that Si was locally oxidized on the surface of the test piece to generate a glass phase of SiO.sub.x, and consequently, the local “apparent composition” has shifted to the Mo-rich side, and changed to the coexistence region of MoSi.sub.2 and Mo.sub.5Si.sub.3. It should be noted that the reason that metal Mo was generated in the oxidized product of Composition No. 14 is unknown. In addition, a change in the weight of Composition No. 14 due to oxidation is about 30%, and this is considered to be due to the generation of a glass phase upon oxidation of Si.

(199) FIGS. 11a and 11b show XRD diagrams of the polished surfaces of the cross-sections of Composition No. 13 and Composition No. 14.

(200) From the upper and lower diagrams of FIG. 11a, it is seen that the constituent phases of the compositions are the same, and MoSi.sub.2, Si, trace amounts of SiO.sub.2 (cristobalite), and trace amounts of SiC (3 C: low-temperature 3-period cubic crystals) are detected.

(201) Meanwhile, with respect to Composition No. 14 in FIG. 11b, MoSi.sub.2, Si, Mo.sub.5Si.sub.3, and trace amounts of SiO.sub.2 (cristobalite) are detected. Meanwhile, with respect to Composition No. 14 after subjected to oxidation treatment, Mo and a glass phase are detected in addition to MoSi.sub.2, Si, Mo.sub.5Si.sub.3, and trace amounts of SiO.sub.2 (cristobalite). With respect to Composition No. 14 that contains a large amount of Si, the amount of the glass phase after oxidation treatment is larger than that of Composition No. 13, and metal Mo is also detected.

(202) The upper diagrams of FIGS. 12a and 12b show XRD diagrams obtained by enlarging the intensity scale at the ordinate axis of diffraction rays on the low-angle side of Composition No. 13 and Composition No. 14 before subjected to oxidation treatment, respectively, and the lower diagrams FIGS. 12a and 12b show XRD diagrams obtained by enlarging the intensity scale at the ordinate axis of diffraction rays on the low-angle side of Composition No. 13 and Composition No. 14 after subjected to oxidation treatment, respectively.

(203) From FIG. 12a, it is seen that diffraction patterns of the inside and the surface of unprocessed Composition No. 13 are almost the same, and a peak of SiO.sub.2 (cristobalite) is detected but a glass phase is not recognized. However, in the oxidized product, a small amount of glass phase is detected.

(204) Meanwhile, from FIG. 12b, it is seen that diffraction patterns of the inside and the surface of unprocessed Composition No. 14 are almost the same, and a peak of SiO.sub.2 (cristobalite) is detected but a glass phase is not recognized. However, the oxidized product is found to contain an increased amount of glass phase than Composition No. 13.

(205) Table 11 below shows the variety of XRD analysis results described above.

(206) TABLE-US-00011 TABLE 11 Sample Composition MoSi.sub.2 Si Analyzed Oxidation No. No. (vol %) (vol %) Portion Treatment Constituent Phase 1 13 40 60 Surface None MoSi.sub.2, Si, Trace Amounts of SiC Trace Amounts of SiO.sub.2 (Cristobalite) 2 14 30 70 Surface None MoSi.sub.2, Si, Trace Amounts of SiC Trace Amounts of SiO.sub.2 (Cristobalite) 3 13 40 60 Surface 1000° C. × MoSi.sub.2, Si, Mo.sub.5Si.sub.3, Trace Amounts 192 Hr of Glass Phase Trace Amounts of SiO.sub.2 (Cristobalite) 4 14 30 70 Surface 1000° C. × MoSi.sub.2, Si, Mo.sub.5Si.sub.3, Mo, Glass 192 Hr Phase Trace Amounts of SiO.sub.2 (Cristobalite) 5 13 40 60 Inside None MoSi.sub.2, Si, Trace Amounts of SiC Trace Amounts of SiO.sub.2 (Cristobalite) 6 14 30 70 Inside None MoSi.sub.2, Si, Trace Amounts of SiC Trace Amounts of SiO.sub.2 (Cristobalite) 7 13 40 60 Inside 1000° C. × MoSi.sub.2, Si, Mo.sub.5Si.sub.3, 192 Hr Trace Amounts of SiO.sub.2 (Cristobalite) 8 14 30 70 Inside 1000° C. × MoSi.sub.2, Si, Mo.sub.5Si.sub.3, Mo, Glass 192 Hr Phase Trace Amounts of SiO.sub.2 (Cristobalite)

(207) This analysis has clarified the following.

(208) (1) All of the constituent phases of the surfaces and the insides of Composition No. 13 and Composition No. 14 not subjected to oxidation treatment are the same.

(209) (2) Trace amounts of glass phase are detected from the surface of Composition No. 13 subjected to oxidation treatment, but the glass phase is not detected from the inside thereof.

(210) (3) The constituent phases of the surface and the inside of Composition No. 14 subjected to oxidation treatment are the same, and a glass phase co-exists in addition to the crystal phase.

(211) (4) An increase in the amount of oxidation at 1000° C. is considered to be due to the generation of the SiO glass phase upon oxidation of Si.

(212) [Measurement of Volume Resistivity and Results Thereof]

(213) Next, volume resistivity that is an electrical characteristic of each of baked bodies made of MoSi.sub.2/SiC/Si-based, MoSi.sub.2/SiC-based, and MoSi.sub.2/Si-based composite materials is evaluated.

(214) As the experimental method, baked bodies each having a width of 5 mm×a thickness of 5 mm×a length of 48 mm were produced using composite materials of the eight types of compositions shown in Table 5, and the baked bodies were machined into test pieces each having a width of 5 mm×a thickness of 5 mm×a length of 30 mm.

(215) Four silver wires (0.2 mmφ) were wound around each test piece, and silver paste was applied thereto and the test piece was dried at 100° C. for 24 hours, and then, baking treatment was performed in nitrogen under the conditions of 450° C. for two hours (a rate of temperature increase: 200° C./hour), whereby current terminals and voltage terminals were formed. The dimensions of each test piece were measured with a micrometer and a microscope.

(216) In addition, the volume resistivity was measured with a potentio/galvanostat. Before the measurement, the atmosphere was replaced with N.sub.2 (a purity of greater than or equal to 99.9995%) gas, and the temperature was increased up to 600° C. at a rate of temperature increase of 300° C./hour, and then, the test piece was held therein for about 30 minutes. After that, current (I) was supplied across terminals on the outer side of the sample for 30 seconds, and voltage (V) across terminals on the inner side was measured. Next, the temperature was reduced down to 500° C. at a temperature decreasing rate of (300° C./hour), and the test piece was held therein for about 30 minutes, and then, current and voltage were measured in the same way. Hereinafter, the measurement temperature was set to 400° C., 300° C., 100° C., and room temperature. The volume resistivity (ρv) was calculated from Formula 1 below using the aforementioned data.
ρv=V/I×S/L  (Formula 1)

(217) Herein, ρv: volume resistivity (Ωcm), V: voltage (V) across terminals, I: current (A), S: cross-sectional area of the sample where w×t (cm.sup.2) (W indicates the width (cm) of the sample and t indicates the thickness (cm) of the sample), and L: the distance between voltage terminals (cm).

(218) Table 12 below shows the measurement results of the dimensions of the samples.

(219) TABLE-US-00012 TABLE 12 Measurement Results of Dimensions Distance between Compo- Thick- Voltage sition Composition Width ness Terminals No. (Vol %) w(cm) t(cm) L(cm) S/L 1 MoSi2:50—SiC:50 0.5022 0.5035 0.9919 0.255 2 MoSi2:40—SiC:30—Si:30 0.5024 0.5028 0.9912 0.255 3 MoSi2:90—Si:10 0.3632 0.5019 0.9916 0.184 4 MoSi2:45—SiC:45—Si:10 0.5032 0.5042 0.9916 0.256 5 MoSi2:50—SiC:40—Si:10 0.4995 0.5010 0.9939 0.252 6 MoSi2:60—SiC:30—Si:10 0.5010 0.4984 0.9916 0.252 7 MoSi2:70—SiC:20—Si:10 0.4995 0.5008 0.9900 0.253 8 MoSi2:80—SiC:10—Si:10 0.5010 0.4523 0.9883 0.229

(220) As shown in Table 12, each composition was almost accurately machined to have a width and a thickness of 0.50 cm excluding the baked body of Composition No. 3 for which a width of 0.5 cm was not able to be secured during the machining. When Composition No. 3 with insufficient dimensions was machined until a parallel plane appeared, a width of 0.36 cm was obtained. The distance between terminals across which voltage is to be applied is found to be all 0.99 mm, and thus is constant.

(221) Next, voltage values of when a constant amount of current was applied under temperature conditions of every 100° C. from the room temperature to 600° C. were measured to determine the volume resistivities of Compositions No. 1 to No. 8. Tables 13 to 20 below show the results thereof.

(222) TABLE-US-00013 TABLE 13 Volume Resistivity of Composition No. 1 (MoSi.sub.2:50 vol. %-SiC:50 vol. %) at Each Temperature Volume Temperature Current Voltage Resistance Resistivity (° C.) (A) (V) (Ω) (Ω .Math.cm) 21 (Room Temp) 1.000 4.130 × 10.sup.−3 4.13 × 10.sup.−3 1.05 × 10.sup.−3 100 1.000 5.375 × 10.sup.−3 5.38 × 10.sup.−3 1.37 × 10.sup.−3 200 1.000 6.960 × 10.sup.−3 6.96 × 10.sup.−3 1.77 × 10.sup.−3 300 1.000 8.620 × 10.sup.−3 8.62 × 10.sup.−3 2.20 × 10.sup.−3 400 1.000 1.060 × 10.sup.−2 1.06 × 10.sup.−2 2.70 × 10.sup.−3 500 1.000 1.283 × 10.sup.−2 1.28 × 10.sup.−2 3.27 × 10.sup.−3 600 1.000 1.529 × 10.sup.−2 1.53 × 10.sup.−2 3.90 × 10.sup.−3

(223) From Table 13, it is seen that the volume resistivity increases with an increase in temperature from the room temperature, and the volume resistivity at 600° C. is nearly four times that at room temperature. However, the volume resistivity is found to be at a level of (×10.sup.−3) at each temperature. Considering the fact that the volume resistivity of SUS304 is (1×10.sup.−4), Composition No. 1 is found to be a conductor.

(224) TABLE-US-00014 TABLE 14 Volume Resistivity of Composition No. 2 (MoSi.sub.2:40 vol. %-SiC:30 vol. %-Si:30 vol. %) at Each Temperature Volume Temperature Current Voltage Resistance Resistivity (° C.) (A) (V) (Ω) (Ω .Math.cm) 21 1.000 9.830 × 10.sup.−3 9.83 × 10.sup.−3 2.51 × 10.sup.−3 100 1.000 1.070 × 10.sup.−2 1.07 × 10.sup.−2 2.73 × 10.sup.−3 200 1.000 1.210 × 10.sup.−2 1.21 × 10.sup.−2 3.08 × 10.sup.−3 300 1.000 1.380 × 10.sup.−2 1.38 × 10.sup.−2 3.52 × 10.sup.−3 400 1.000 1.654 × 10.sup.−2 1.65 × 10.sup.−2 4.22 × 10.sup.−3 500 1.000 1.777 × 10.sup.−2 1.78 × 10.sup.−2 4.53 × 10.sup.−3 600 1.000 2.023 × 10.sup.−2 2.02 × 10.sup.−2 5.16 × 10.sup.−3

(225) From Table 14, it is seen that the volume resistivity increases with an increase in temperature as with Composition 1, and the volume resistivity at 600° C. is double that at room temperature. However, the volume resistivity is found to be at a level of (×10.sup.−3) at each temperature, and Composition No. 2 is also found to be a conductor.

(226) TABLE-US-00015 TABLE 15 Volume Resistivity of Composition No. 3 (MoSi.sub.2:90 vol. %-Si:10 vol. %) at Each Temperature Volume Temperature Current Voltage Resistance Resistivity (° C.) (A) (V) (Ω) (Ω .Math.cm) 22 1.000 4.560 × 10.sup.−4 4.56 × 10.sup.−4 8.36 × 10.sup.−5 100 1.000 6.840 × 10.sup.−4 6.84 × 10.sup.−4 1.25 × 10.sup.−4 200 1.000 9.970 × 10.sup.−4 9.97 × 10.sup.−4 1.83 × 10.sup.−4 300 1.000 1.080 × 10.sup.−3 1.08 × 10.sup.−3 1.98 × 10.sup.−4 400 1.000 1.193 × 10.sup.−3 1.19 × 10.sup.−3 2.19 × 10.sup.−4 500 1.000 1.433 × 10.sup.−3 1.43 × 10.sup.−3 2.63 × 10.sup.−4 600 1.000 1.679 × 10.sup.−3 1.68 × 10.sup.−3 3.08 × 10.sup.−4

(227) From Table 15, it is seen that the volume resistivity increases with an increase in temperature, and the volume resistivity at 600° C. is nearly four times that at room temperature. However, as the volume resistivity is at a level as low as (×10.sup.−5 to 10.sup.−4), Composition No. 3 is found to be a conductor. A decrease in the volume resistivity of Composition No. 3 is considered to be due to the fact that the content of MoSi.sub.2 is 90 Vol %, which is the highest.

(228) TABLE-US-00016 TABLE 16 Volume Resistivity of Composition No. 4 (MoSi.sub.2:45 vol. %.-SiC:45 vol. %-Si:10 vol. %) at Each Temperature Volume Temperature Current Voltage Resistance Resistivity (° C.) (A) (V) (Ω) (Ω .Math.cm)  22 1.000 5.980 × 10.sup.−2 5.98 × 10.sup.−2 1.53 × 10.sup.−2 100 1.000 6.238 × 10.sup.−2 6.24 × 10.sup.−2 1.60 × 10.sup.−2 200 1.000 7.060 × 10.sup.−2 7.06 × 10.sup.−2 1.81 × 10.sup.−2 300 1.000 8.850 × 10.sup.−2 8.85 × 10.sup.−2 2.26 × 10.sup.−2 400 1.000 9.597 × 10.sup.−2 9.60 × 10.sup.−2 2.46 × 10.sup.−2 500 1.000 1.024 × 10.sup.−1 1.02 × 10.sup.−1 2.62 × 10.sup.−2 600 1.000 1.112 × 10.sup.−1 1.11 × 10.sup.−1 2.85 × 10.sup.−2

(229) From Table 16, it is seen that the volume resistivity increases with an increase in temperature, and the volume resistivity is at a level of (×10.sup.−2), which is higher than those of the other compositions. This is due to the fact that the content of MoSi.sub.2 is low.

(230) TABLE-US-00017 TABLE 17 Volume Resistivity of Composition No. 5 (MoSi.sub.2:50 vol. %-SiC:40 vol. %-Si:10 vol. %) at Each Temperature Volume Temperature Current Voltage Resistance Resistivity (° C.) (A) (V) (Ω) (Ω .Math.cm) 26 1.00 × 10.sup.−1 2.28 × 10.sup.−3 2.28 × 10.sup.−2 5.74 × 10.sup.−3 100 1.00 × 10.sup.−1 2.77 × 10.sup.−3 2.77 × 10.sup.−2 6.97 × 10.sup.−3 200 1.00 × 10.sup.−1 3.46 × 10.sup.−3 3.46 × 10.sup.−2 8.71 × 10.sup.−3 300 1.00 × 10.sup.−1 3.95 × 10.sup.−3 3.95 × 10.sup.−2 9.95 × 10.sup.−3 400 1.00 × 10.sup.−1 4.62 × 10.sup.−3 4.62 × 10.sup.−2 1.16 × 10.sup.−2 500 1.00 × 10.sup.−1 5.32 × 10.sup.−3 5.32 × 10.sup.−2 1.34 × 10.sup.−2 600 1.00 × 10.sup.−1 5.99 × 10.sup.−3 5.99 × 10.sup.−2 1.51 × 10.sup.−2

(231) TABLE-US-00018 TABLE 18 Volume Resistivity of Composition No. 6 (MoSi.sub.2:60 vo1. %-SiC:30 vol. %-Si:10 vol. %) at Each Temperature Volume Temperature Current Voltage Resistance Resistivity (° C.) (A) (V) (Ω) (Ω .Math.cm) 26 1.00 × 10.sup.−1 2.79 × 10.sup.−4 2.79 × 10.sup.−3 7.03 × 10.sup.−4 100 1.00 × 10.sup.−1 4.32 × 10.sup.−4 4.32 × 10.sup.−3 1.09 × 10.sup.−3 200 1.00 × 10.sup.−1 6.65 × 10.sup.−4 6.65 × 10.sup.−3 1.67 × 10.sup.−3 300 1.00 × 10.sup.−1 7.02 × 10.sup.−4 7.02 × 10.sup.−3 1.77 × 10.sup.−3 400 1.00 × 10.sup.−1 8.56 × 10.sup.−4 8.56 × 10.sup.−3 2.16 × 10.sup.−3 500 1.00 × 10.sup.−1 1.05 × 10.sup.−3 1.05 × 10.sup.−2 2.64 × 10.sup.−3 600 1.00 × 10.sup.−1 1.20 × 10.sup.−3 1.20 × 10.sup.−2 3.02 × 10.sup.−3

(232) TABLE-US-00019 TABLE 19 Volume Resistivity of Composition No .7 (MoSi.sub.2:70 vol. %-SiC:20 vol. %-Si:10 vol. %) at Each Temperature Volume Temperature Current Voltage Resistance Resistivity (° C.) (A) (V) (Ω) (Ω .Math.cm) 20 1.00 × 10.sup.−1 1.44 × 10.sup.−4 1.44 × 10.sup.−3 3.64 × 10.sup.−4 100 1.00 × 10.sup.−1 1.86 × 10.sup.−4 1.86 × 10.sup.−3 4.70 × 10.sup.−4 200 1.00 × 10.sup.−1 2.48 × 10.sup.−4 2.48 × 10.sup.−3 6.27 × 10.sup.−4 300 1.00 × 10.sup.−1 2.90 × 10.sup.−4 2.90 × 10.sup.−3 7.33 × 10.sup.−4 400 1.00 × 10.sup.−1 3.58 × 10.sup.−4 3.58 × 10.sup.−3 9.05 × 10.sup.−4 500 1.00 × 10.sup.−1 4.32 × 10.sup.−4 4.32 × 10.sup.−3 1.09 × 10.sup.−3 600 1.00 × 10.sup.−1 4.87 × 10.sup.−4 4.87 × 10.sup.−3 1.23 × 10.sup.−3

(233) TABLE-US-00020 TABLE 20 Volume Resistivity of Composition No. 8 (MoSi.sub.2:80 vol. %-SiC:10 vol. %-Si:10 vol. %) at Each Temperature Volume Temperature Current Voltage Resistance Resistivity (° C.) (A) (V) (Ω) (Ω .Math.cm) 20 1.00 × 10.sup.−1 4.53 × 10.sup.−5 4.53 × 10.sup.−4 1.04 × 10.sup.−4 100 1.00 × 10.sup.−1 6.37 × 10.sup.−5 8.37 × 10.sup.−4 1.46 × 10.sup.−4 200 1.00 × 10.sup.−1 8.21 × 10.sup.−5 8.21 × 10.sup.−4 1.88 × 10.sup.−4 300 1.00 × 10.sup.−1 1.00 × 10.sup.−4 1.00 × 10.sup.−3 2.29 × 10.sup.−4 400 1.00 × 10.sup.−1 1.19 × 10.sup.−4 1.19 × 10.sup.−3 2.73 × 10.sup.−4 500 1.00 × 10.sup.−1 1.43 × 10.sup.−4 1.43 × 10.sup.−3 3.28 × 10.sup.−4 600 1.00 × 10.sup.−1 1.80 × 10.sup.−4 1.80 × 10.sup.−3 4.13 × 10.sup.−4

(234) From Tables 17-20, it is seen that the volume resistivity of each composition is at a level of (×10.sup.−2×10.sup.−4) and exhibits similar characteristics, and each composition is thus found to be a conductor.

(235) From the above results, the compositions of baked bodies of the eight types of compositions and the volume resistivities thereof at room temperature to 600° C. are shown in Table 21 below. Further, the high-temperature volume resistivities of Compositions No. 1 to 4 and Compositions No. 5 to 8 are shown in FIGS. 13a and 13b, respectively.

(236) TABLE-US-00021 TABLE 21 Composition (Vol %) Measurement Temperature (° C.) No. MoSi2 SiC Si 20 100 200 300 400 500 600 1 50 50  0 1.05 × 10.sup.−3 1.37 × 10.sup.−3 1.77 × 10.sup.−3 2.20 × 10.sup.−3 2.70 × 10.sup.−3 3.27 × 10.sup.−3 3.90 × 10.sup.−3 2 40 30 30 2.51 × 10.sup.−3 2.73 × 10.sup.−3 3.08 × 10.sup.−3 3.52 × 10.sup.−3 4.22 × 10.sup.−3 4.53 × 10.sup.−3 5.16 × 10.sup.−3 3 90 10 10 8.36 × 10.sup.−5 1.25 × 10.sup.−4 1.83 × 10.sup.−4 1.98 × 10.sup.−4 2.19 × 10.sup.−4 2.63 × 10.sup.−4 3.09 × 10.sup.−4 4 45 45 10 1.53 × 10.sup.−2 1.60 × 10.sup.−2 1.81 × 10.sup.−2 2.26 × 10.sup.−2 2.46 × 10.sup.−2 2.62 × 10.sup.−2 2.85 × 10.sup.−2 5 50 40 10  5.7 × 10.sup.−3 6.97 × 10.sup.−3 8.71 × 10.sup.−3 9.95 × 10.sup.−3 1.16 × 10.sup.−2 1.34 × 10.sup.−2 1.51 × 10.sup.−2 6 60 30 10 7.03 × 10.sup.−4 1.09 × 10.sup.−3 1.67 × 10.sup.−3 1.77 × 10.sup.−3 2.16 × 10.sup.−3 2.64 × 10.sup.−3 3.02 × 10.sup.−3 7 70 20 10 3.64 × 10.sup.−4 4.70 × 10.sup.−4 6.27 × 10.sup.−4 7.33 × 10.sup.−4 9.05 × 10.sup.−4 1.09 × 10.sup.−3 1.23 × 10.sup.−3 8 80 10 10 1.04 × 10.sup.−4 1.46 × 10.sup.−4 1.88 × 10.sup.−4 2.29 × 10.sup.−4 2.73 × 10.sup.−4 3.28 × 10.sup.−4 4.13 × 10.sup.−4

(237) From FIGS. 13a and 13b, it is seen that the volume resistivities of the baked bodies of the eight types of compositions slightly exhibit positive temperature dependence, but the dependence is low and the volume resistivities are stable. In addition, as the volume resistivities are at a level as low as (×10.sup.−2×10.sup.−5), such materials are found to be conductors.

(238) The volume resistivities of the eight compositions are rearranged in order of decreasing content of MoSi.sub.2, as shown in Table 22 below.

(239) TABLE-US-00022 TABLE 22 Composition (Vol %) Measurement Temperature (° C.) No. MoSi2 SiC Si 20 100 200 300 400 500 600 3 90  0 10 8.36 × 10.sup.−2 1.25 × 10.sup.−4 1.83 × 10.sup.−4 1.98 × 10.sup.−4 2.19 × 10.sup.−4 2.63 × 10.sup.−4 3.09 × 10.sup.−4 8 80 10 10 1.04 × 10.sup.−4 1.46 × 10.sup.−4 1.88 × 10.sup.−4 2.29 × 10.sup.−4 2.73 × 10.sup.−4 3.28 × 10.sup.−4 4.13 × 10.sup.−4 7 70 20 10 3.64 × 10.sup.−4 4.70 × 10.sup.−4 6.27 × 10.sup.−4 7.33 × 10.sup.−4 9.05 × 10.sup.−4 1.09 × 10.sup.−3 1.23 × 10.sup.−3 6 60 30 10 7.03 × 10.sup.−4 1.09 × 10.sup.−3 1.67 × 10.sup.−3 1.77 × 10.sup.−3 2.16 × 10.sup.−3 2.64 × 10.sup.−3 3.02 × 10.sup.−3 5 50 40 10  5.7 × 10.sup.−3 6.97 × 10.sup.−3 8.71 × 10.sup.−3 9.95 × 10.sup.−3 1.16 × 10.sup.−2 1.34 × 10.sup.−2 1.51 × 10.sup.−2 1 50 50  0 1.05 × 10.sup.−3 1.37 × 10.sup.−3 1.77 × 10.sup.−3 2.20 × 10.sup.−3 2.70 × 10.sup.−3 3.27 × 10.sup.−3 3.90 × 10.sup.−3 4 45 45 10 1.53 × 10.sup.−2 1.60 × 10.sup.−2 1.81 × 10.sup.−2 2.26 × 10.sup.−2 2.46 × 10.sup.−2 2.62 × 10.sup.−2 2.85 × 10.sup.−2 2 40 30 30 2.51 × 10.sup.−3 2.73 × 10.sup.−3 3.08 × 10.sup.−3 3.52 × 10.sup.−3 4.22 × 10.sup.−3 4.53 × 10.sup.−3 5.16 × 10.sup.−3

(240) FIGS. 14a and 14b are diagrams obtained by plotting the volume resistivity at room temperature and at 600° C., as representative examples, relative to the content of MoSi.sub.2, respectively, on the basis of the data in Table 22. It is found that the volume resistivity tends to decrease with an increase in the content of MoSi.sub.2 at each of the room temperature and 600° C.

(241) Accordingly, it is found that the volume resistivities of the eight types of baked bodies are at a level as low as (×10.sup.−2 to 10.sup.−5) at room temperature to 600° C., and thus the baked bodies are found to be conductors with further lower temperature dependence and stable volume resistivity. Thus, such materials can be concluded as composite materials that are promising as the materials for an electrode terminal and an electrode film of an EV-EHC.

(242) (Evaluation of High-Temperature Volume Resistivities of MoSi.sub.2/SiC/Si-Based Baked Bodies Subjected to Oxidation Treatment and not Subjected to Oxidation Treatment)

(243) Herein, the volume resistivities at room temperature to 600° C. of baked bodies of MoSi.sub.2/SiC/Si-based composite materials, which have been subjected to oxidation treatment and not subjected to oxidation treatment, are measured.

(244) As the experimental method, first, square bar-shaped molded bodies were produced from materials of Compositions No. 1 to 8, and the molded bodies were then baked at 1500 CC for 4 hours. Then, the resulting baked bodies were machined into test pieces for oxidation test each having dimensions of 5×5×30 mm. Each test piece was mounted on an Al.sub.2O.sub.3 baked body and was loaded into an electric furnace, and then, the temperature was increased from the room temperature up to 1000° C. at a rate of 10° C./minute. The test piece was held therein for a predetermined time of 24 hours, 48 hours, 96 hours, or 192 hours, and was then cooled in the furnace. Electrode terminals were formed from test pieces, which have been subjected to oxidation treatment and not subjected to oxidation treatment, and the volume resistivity in nitrogen at room temperature to 600° C. was measured using a four-terminal method. Measurement of the volume resistivity with the four-terminal method was performed based on the conventional method.

(245) Table 23 below shows the measurement results of the volume resistivity. It should be noted that with respect to Compositions 1, 2, 3, and 4, there is no data on the compositions at 200° C. that have not been subjected to oxidation treatment and the compositions that have been subjected to oxidation treatment for 24 hours and 96 hours.

(246) TABLE-US-00023 TABLE 23 Volume Resistivities at Room Temperature to 900° C. after Subjected to Heat Treatment at 1000° C. for 192 Hours Measurement Temperature Composition Time 20° C. No. (vol %) (Hr) 600° C. 500° C. 400° C. 300° C. 200° C. 100° C. (Room Temp) 1 MoSi2:50 0 3.90 × 10.sup.−3 3.27 × 10.sup.−3 2.70 × 10.sup.−3 2.20 × 10.sup.−3 1.37 × 10.sup.−3 1.05 × 10.sup.−3 —SiC:50 192 1.15 × 10.sup.−2 1.04 × 10.sup.−2 8.73 × 10.sup.−3 7.31 × 10.sup.−3 4.92 × 10.sup.−3 3.93 × 10.sup.−3 2 MoSi2:40 0 5.16 × 10.sup.−3 4.53 × 10.sup.−3 4.22 × 10.sup.−3 3.52 × 10.sup.−3 2.73 × 10.sup.−3 2.53 × 10.sup.−3 —SiC:30 192 5.60 × 10.sup.−2 9.26 × 10.sup.−2 1.18 × 10.sup.−1 1.28 × 10.sup.−1 1.45 × 10.sup.−1 1.51 × 10.sup.−1 —Si:30 3 MoSi2:90 0 3.08 × 10.sup.−4 2.53 × 10.sup.−4 2.19 × 10.sup.−4 1.98 × 10.sup.−4 1.25 × 10.sup.−4 9.28 × 10.sup.−5 —Si:10 192 3.40 × 10.sup.−4 2.80 × 10.sup.−4 2.39 × 10.sup.−4 1.95 × 10.sup.−4 1.14 × 10.sup.−4 8.38 × 10.sup.−5 4 MoSi2:45 0 2.85 × 10.sup.−2 2.62 × 10.sup.−2 2.46 × 10.sup.−2 2.26 × 10.sup.−2 1.60 × 10.sup.−2 1.50 × 10.sup.−2 —SiC:45 192 4.80 × 10.sup.−1 4.84 × 10.sup.−1 4.60 × 10.sup.−1 4.39 × 10.sup.−1 4.58 × 10.sup.−1 5.19 × 10.sup.−1 —Si:10 5 MoSi2:50 0 1.51 × 10.sup.−2 1.34 × 10.sup.−2 1.16 × 10.sup.−2 9.95 × 10.sup.−3 8.71 × 10.sup.−3 6.97 × 10.sup.−3 5.74 × 10.sup.−3 —SiC:40 24 1.09 × 10.sup.−2 8.70 × 10.sup.−3 7.69 × 10.sup.−3 6.52 × 10.sup.−3 5.70 × 10.sup.−3 4.59 × 10.sup.−3 3.11 × 10.sup.−3 —Si:10 96 1.85 × 10.sup.−2 1.61 × 10.sup.−2 1.44 × 10.sup.−2 1.28 × 10.sup.−2 1.14 × 10.sup.−2 9.44 × 10.sup.−3 8.19 × 10.sup.−3 192 5.29 × 10.sup.−2 5.01 × 10.sup.−2 4.30 × 10.sup.−2 4.09 × 10.sup.−2 4.00 × 10.sup.−2 4.11 × 10.sup.−2 4.93 × 10.sup.−2 6 MoSi2:60 0 3.02 × 10.sup.−3 2.64 × 10.sup.−3 2.16 × 10.sup.−3 1.77 × 10.sup.−3 1.67 × 10.sup.−3 1.09 × 10.sup.−3 7.48 × 10.sup.−4 —SiC:30 24 2.46 × 10.sup.−3 1.96 × 10.sup.−3 1.70 × 10.sup.−3 1.39 × 10.sup.−3 1.17 × 10.sup.−3 8.46 × 10.sup.−4 7.04 × 10.sup.−4 —Si:10 96 3.10 × 10.sup.−3 2.68 × 10.sup.−3 2.34 × 10.sup.−3 1.99 × 10.sup.−3 1.58 × 10.sup.−3 1.23 × 10.sup.−3 8.66 × 10.sup.−4 192 8.40 × 10.sup.−3 7.22 × 10.sup.−3 6.35 × 10.sup.−3 5.45 × 10.sup.−3 4.61 × 10.sup.−3 3.26 × 10.sup.−3 2.43 × 10.sup.−3 7 MoSi2:70 0 1.23 × 10.sup.−3 1.09 × 10.sup.−3 9.05 × 10.sup.−4 7.33 × 10.sup.−4 5.27 × 10.sup.−4 4.70 × 10.sup.−4 3.46 × 10.sup.−4 —SC:20 24 8.92 × 10.sup.−4 3.31 × 10.sup.−4 3.35 × 10.sup.−4 5.21 × 10.sup.−4 6.12 × 10.sup.−4 4.55 × 10.sup.−4 2.71 × 10.sup.−4 —Si10 96 1.77 × 10.sup.−3 1.48 × 10.sup.−3 9.18 × 10.sup.−4 6.08 × 10.sup.−4 5.44 × 10.sup.−4 4.49 × 10.sup.−4 2.94 × 10.sup.−4 192 1.16 × 10.sup.−3 1.03 × 10.sup.−3 5.45 × 10.sup.−4 7.04 × 10.sup.−4 5.97 × 10.sup.−4 4.85 × 10.sup.−4 3.57 × 10.sup.−4 8 MoSi2:80 0 4.13 × 10.sup.−4 3.28 × 10.sup.−4 2.73 × 10.sup.−4 2.29 × 10.sup.−4 1.88 × 10.sup.−4 1.46 × 10.sup.−4 1.04 × 10.sup.−4 —SiC:10 24 8.14 × 10.sup.−4 2.49 × 10.sup.−4 2.61 × 10.sup.−4 1.38 × 10.sup.−4 2.32 × 10.sup.−4 2.12 × 10.sup.−4 1.25 × 10.sup.−4 —Si-10 96 5.50 × 10.sup.−4 3.25 × 10.sup.−4 2.48 × 10.sup.−4 2.95 × 10.sup.−4 3.05 × 10.sup.−4 2.50 × 10.sup.−4 2.00 × 10.sup.−4 192 6.38 × 10.sup.−4 4.49 × 10.sup.−4 3.99 × 10.sup.−4 3.25 × 10.sup.−4 2.61 × 10.sup.−4 1.87 × 10.sup.−4 1.33 × 10.sup.−4

(247) From the series of data in Table 23, the volume resistivity (Ωcm) at room temperature of each of the baked bodies of the eight types of compositions, which have been subjected to oxidation treatment at 1000° C. for 24 to 192 hours, is shown in Table 24 below.

(248) TABLE-US-00024 TABLE 24 Volume Resistivities (Ωm) at Room Temperature of Baked Bodies Subjected to Oxidation Treatment at 1000° C. for Predetermined Time Composition Composition Oxidation Treatment Time (Hr) No. (vol %) 0 24 96 192 1 MoSi.sub.2:50 1.05 × 10.sup.−3 3.93 × 10.sup.−3 2 MoSi.sub.2:40—SiC:30 2.53 × 10.sup.−3 1.51 × 10.sup.−1 3 MoSi.sub.2:90 9.28 × 10.sup.−5 8.38 × 10.sup.−5 4 MoSi.sub.2:45—SiC:45 1.50 × 10.sup.−2 5.19 × 10.sup.−1 5 MoSi.sub.2:50—SiC:40 5.74 × 10.sup.−3 3.11 × 10.sup.−3 8.19 × 10.sup.−3 4.93 × 10.sup.−2 6 MoSi.sub.2:60—SiC:30 7.48 × 10.sup.−4 7.04 × 10.sup.−4 8.66 × 10.sup.−4 2.43 × 10.sup.−3 7 MoSi.sub.2:70—SiC:20 3.46 × 10.sup.−4 2.71 × 10.sup.−4 2.94 × 10.sup.−4 3.57 × 10.sup.−4 8 MoSi.sub.2:80—SiC:10 1.04 × 10.sup.−4 1.25 × 10.sup.−4 2.00 × 10.sup.−4 1.33 × 10.sup.−4

(249) FIGS. 15a and 15b show the volume resistivities at room temperature of the baked bodies of Compositions No. 1 to 4 and the volume resistivities at room temperature of the baked bodies of Compositions No. 5 to 8 that have been subjected to oxidation treatment at 1000° C. for a predetermine time, respectively.

(250) From Table 24 and FIGS. 15a and 15b, it is seen that the volume resistivities of Compositions No. 4, 2, and 5 increase with an increase in the treatment time, and the values satisfy No. 4>No. 2>No. 5. However, the volume resistivity after oxidation treatment for 192 hours is 5.19×10.sup.−1 (Ωcm) at the highest. Meanwhile, with respect to Compositions No. 1, 3, 6, 7, and 8, no dependence of the volume resistivity on the treatment time is recognized, and the volume resistivity is at a level as low as 10.sup.−3 to 10.sup.−5 (Ωcm), and such compositions are thus found to be conductors. That is, as the volume resistivities at room temperature of the baked bodies of the eight types of compositions, which have been subjected to oxidation treatment at 1000° C. for 192 hours, are low, such compositions are found to be materials with excellent oxidation resistance even in terms of electrical characteristics.

(251) Next, from the series of data in Table 23, the volume resistivities (Ωm) at 600° C. of the baked bodies of the eight types of compositions, which have been subjected to oxidation treatment at 1000° C. for 24 to 192 hours, are shown in Table 25.

(252) TABLE-US-00025 TABLE 25 Volume Resistivities (Ωm) at Room Temperature of Baked Bodies Subjected to Oxidation Treatment at 1000° C. for Predetermined Time Number Composition Oxidation Treatment Time (Hr) No. (Vol %) 0 24 96 192 1 MoSi.sub.2:50 3.90 × 10.sup.−3 1.15 × 10.sup.−2 2 MoSi.sub.2:40—SiC:30 5.16 × 10.sup.−3 5.60 × 10.sup.−2 3 MoSi.sub.2:90 3.08 × 10.sup.−4 3.40 × 10.sup.−4 4 MoSi.sub.2:45—SiC:45 2.85 × 10.sup.−2 4.80 × 10.sup.−1 5 MoSi.sub.2:50—SiC:40 1.51 × 10.sup.−2 1.09 × 10.sup.−2 1.85 × 10.sup.−2 5.29 × 10.sup.−2 6 MoSi.sub.2:60—SiC:30 3.02 × 10.sup.−3 2.46 × 10.sup.−3 3.10 × 10.sup.−3 8.40 × 10.sup.−3 7 MoSi.sub.2:70—SiC:20 1.23 × 10.sup.−3 8.92 × 10.sup.−4 1.77 × 10.sup.−3 1.16 × 10.sup.−3 8 MoSi.sub.2:80—SiC:10 4.13 × 10.sup.−4 8.14 × 10.sup.−4 5.50 × 10.sup.−4 6.38 × 10.sup.−4

(253) FIGS. 16a and 16b show the volume resistivities at 600° C. of the baked bodies of Compositions No. 1 to 4 and the baked bodies of Compositions No. 5 to 8 that have been subjected to oxidation treatment at 1000° C. for a predetermined time, respectively.

(254) From Table 25 and FIGS. 16a and 16b, it is seen that the volume resistivities of Compositions No. 4, 2, and 5 increase with an increase in the treatment time at 600° C. as at room temperature, and the values satisfy No. 4>No. 2>No. 5. However, the volume resistivity after oxidation treatment for 192 hours is 4.80×10.sup.−1 (Ωcm) at the highest. Meanwhile, with respect to Compositions No. 1, 3, 6, 7, and 8, no dependence of the volume resistivity on the treatment time is recognized, and the volume resistivity is at a level as low as 10.sup.−2 to 10.sup.−4 (Ωcm), and such compositions are thus found to be conductors. That is, as the volume resistivities at 600° C. of the baked bodies of the eight types of compositions, which have been subjected to oxidation treatment at 1000° C. for 192 hours, are low, such compositions are found to be materials with excellent oxidation resistance even in terms of electrical characteristics.

(255) Next, FIGS. 17a to 17h show the high-temperature volume resistivities at 20 to 600° C. of the baked bodies of the eight types of compositions that have been subjected to high-temperature oxidation treatment and not subjected to such treatment.

(256) From FIG. 17a, it is seen that the high-temperature volume resistivities of the baked bodies of Composition No. 1, which have been subjected to oxidation treatment at 1000° C. for 192 hours and not subjected to such treatment, tend to slightly increase with an increase in the temperature, but the volume resistivities are at a level of 10.sup.−3 to 10.sup.−2, and Composition No. 1 is thus found to be a conductor even when subjected to oxidation treatment. Meanwhile, as shown in FIG. 17b, it is seen that the high-temperature volume resistivity of Composition No. 2, which has been subjected to oxidation treatment, tends to slightly decrease with an increase in the temperature, but the high-temperature volume resistivity is up to 10.sup.−3.

(257) From FIG. 17c, it is seen that the volume resistivities of Compositions No. 3, which have been subjected to oxidation treatment for 192 hours and not subjected to such treatment, exhibit values at a level as low as 10.sup.−3 to 10.sup.−4, and also exhibit similar high-temperature volume resistivities at the measurement temperature. Thus, such composition is found to be a conductor with excellent oxidation resistance. Meanwhile, from FIG. 17d, it is seen that the volume resistivity of Composition No. 4, which has been subjected to oxidation treatment, is at a level of up to 10.sup.−1, and the volume resistivity has slightly increased, but temperature-independent behavior was exhibited.

(258) From FIG. 17e, it is seen that the volume resistivity of Composition No. 5 tends to increase with an increase in the oxidation treatment time. However, as the volume resistivity of even Composition No. 5 subjected to oxidation treatment for 192 hours is maintained at a level of up to 10.sup.−2, no temperature dependence is recognized. Meanwhile, from FIG. 17f, it is seen that Composition No. 6, which has been subjected to heat treatment for up to 96 hours, has similar tendency to Composition No. 6, which has not been subjected to heat treatment, and Composition No. 6, which has been subjected to heat treatment for 192 hours, exhibits a value four times as large. However, as the volume resistivity of Composition No. 6 is all at a level of up to 10.sup.−3, Composition No. 6 is found to be a conductor.

(259) From FIGS. 17g and 17h, S-shaped curves are recognized in part of high-temperature volume resistivity curves of Composition No. 7 and Composition No. 8. However, as the volume resistivity is at a level as low as 10.sup.−4 to 10.sup.−3, such curves are determined to be due to behavior within experimental errors from the scale in the ordinate axis. Thus, Composition No. 7 and Composition No. 8 are also found to be conductors with excellent oxidation resistance.

(260) Table 26 below shows the above results. The volume resistivities at room temperature of the baked bodies of the eight types of compositions, which have been subjected to oxidation treatment (in the atmosphere at 1000° C.×192 hours) and not subjected to such treatment, are 10.sup.−5 to 10.sup.−1 (Ωcm), while the volume resistivities at a high temperature of 600° C. of such baked bodies are 10.sup.−4 to 10.sup.−1 (Ωcm). Thus, each of the baked bodies of the eight types of compositions studied this time is found to be a conductor with excellent oxidation resistance.

(261) TABLE-US-00026 TABLE 26 Product Not Product Subjected to Subjected to Oxidation Treatment Oxidation in Atmosphere at Treatment 1000° C. for 192 Hr Volume Resistivity at 10.sup.−5-10.sup.−2 10.sup.−5-10.sup.−1 Room Temperature (Ωcm) Volume Resistivity 10.sup.−4-10.sup.−2 10.sup.−4-10.sup.−1 at 600° C. (Ωcm)
(Volume Resistivities of MoSi.sub.2/Si-Based Baked Bodies)

(262) With respect to MoSi.sub.2/Si-based composite materials, the volume resistivities at room temperature to 600° C. of baked bodies of the two-component-based materials with different compositions and baking conditions were measured, so that whether or not the baked bodies can be applied to an electrode terminal, an electrode film, and a bonding material made of the aforementioned two-component based composite materials.

(263) As the experimental method, first, starting materials each having an average grain size shown in Table 27 below were used to prepare three compositions of MoSi.sub.2/Si-based materials shown in Table 28. Then, the materials were baked under the following three conditions: 1250° C. for 1 hour, which is the bonding condition for a terminal and an electrode film, 1350° C. for 4 hours into which the production conditions for an electrode terminal are taken into consideration, and 1400° C. for 4 hours.

(264) TABLE-US-00027 TABLE 27 Average Grain Sizes of Starting Materials Raw Material MoSi.sub.2 Si Average Grain Size 6.1 μm 8.1 μm (Note 1) (Note 1) Measured with Microtrac ASVR

(265) TABLE-US-00028 TABLE 28 Composition No. MoSi.sub.2 Si Mixed Composition of Each Material (Volume %: Vol. %) 12 50 50 13 40 60 14 30 70 Mixed Composition of Each Material (Weight %: wt. %) 12 73 27 13 64 36 14 54 46

(266) From each of the baked bodies made of the aforementioned materials having a width of 5 mm×a thickness of 5 mm×a length of 48 mm, a test piece with a width of 5 mm×a thickness of 5 mm×a length of 30 mm was obtained through machining. Four silver wires (0.2 mm)) were wound around each test piece, and silver paste was applied thereto and the test piece was dried at 100° C. for 24 hours, and then, baking treatment was performed in nitrogen under the conditions of 450° C. for two hours (a rate of temperature increase: 200° C./hour), whereby current terminals and voltage terminals were formed. The dimensions of each test piece were measured with a micrometer and a microscope. With respect to the volume resistivity, a four-terminal method was used, and the temperature was increased up to 600° C. at a rate of temperature increase of 300° C./hour in an N.sub.2 (a purity of greater than or equal to 99.9995%) gas atmosphere, and then, the test piece was held therein for about 30 minutes. After that, current (I) was supplied across terminals on the outer side of the sample for 30 seconds, and voltage (V) across terminals on the inner side was measured. Next, the temperature was reduced down to 500° C. at a temperature decreasing rate of (300° C./hour), and the test piece was held therein for about 30 minutes, and then, current and voltage were measured in the same way. Hereinafter, the measurement temperature was set to 400° C., 300° C., 100° C., and room temperature. The volume resistivity (ρv) was calculated from Formula 1 above using the aforementioned data.

(267) Table 29 below shows the measurement results of the dimensions of test pieces obtained by baking three types of compositions of MoSi.sub.2/Si-based materials under three standard conditions.

(268) TABLE-US-00029 TABLE 29 Measurement Results of Dimensions of Test Pieces Composition Distance between Composition Ratio Baking Width/w Thickness/t Voltage No. (Vol %) Conditions (cm) (cm) Terminals/L (cm) S/L 12 MoSi.sub.2:50 1250° C × 1 Hr 0.5001 0.5027 0.9923 0.255 13 MoSi.sub.2:40 1250° C × 1 Hr 0.5021 0.5024 0.9969 0.253 14 MoSi.sub.2:30 1250° C × 1 Hr 0.5018 0.5024 0.9948 0.253 12 MoSi.sub.2:50 1350° C × 4 Hr 0.5021 0.5027 0.9992 0.255 13 MoSi.sub.2:40 1350° C × 4 Hr 0.5018 0.5038 0.9898 0.253 14 MoSi.sub.2:30 1350° C × 4 Hr 0.5017 0.5036 0.9886 0.256 12 MoSi.sub.2:50 1400° C × 4 Hr 0.5029 0.5034 0.9980 0.254 13 MoSi.sub.2:40 1400° C × 4 Hr 0.5023 0.5039 0.9905 0.256 14 MoSi.sub.2:30 1400° C × 4 Hr 0.5027 0.5038 0.9940 0.255

(269) From Table 29, it is seen that the dimensions of each test piece after machining are a width of 0.5 cm×a thickness of 0.5 cm, and the distance between the voltage terminals is all 1.0 cm and thus is constant.

(270) Table 30 below shows the volume resistivity at room temperature to 600° C. of Composition No. 12 baked at 1250° C. for 1 hour.

(271) TABLE-US-00030 TABLE 30 Volume Resistivity at Each Temperature of Composition No. 12: MoSi.sub.2: 50 vol. % - Si: 50 vol. % Baked at 1250° C. for 1 Hour Temperature Current Voltage Resistance Volume (° C.) (A) (V) (Ω) Resistivity (Ω .Math. cm) 34 1.000 1.780 × 10.sup.−2 1.8 × 10.sup.−2 4.5 × 10.sup.−3 100 1.000 2.137 × 10.sup.−2 2.1 × 10.sup.−2 5.5 × 10.sup.−3 200 1.000 2.840 × 10.sup.−2 2.8 × 0.sup.−2  7.2 × 10.sup.−3 300 1.000 3.380 × 10.sup.−2 3.4 × 10.sup.−2 8.6 × 10.sup.−3 400 1.000 3.777 × 10.sup.−2 3.8 × 10.sup.−2 9.6 × 10.sup.−3 500 1.000 4.150 × 10.sup.−2 4.2 × 10.sup.−2 1.1 × 10.sup.−2 600 1.000 4.590 × 10.sup.−2 4.6 × 10.sup.−2 1.2 × 10.sup.−2

(272) From Table 30, it is seen that the value is at a level as low as 10.sup.−3 to 10.sup.−2 Ωcm, and the baked body is thus found to be a conductor.

(273) Next, Table 31 and Table 32 below show the volume resistivities at room temperature to 600° C. of Composition No. 13 and Composition No. 14 baked at 1250° C. for 1 hour, respectively.

(274) TABLE-US-00031 TABLE 31 Volume Resistivity at Each Temperature of Composition No. 13: MoSi.sub.2: 40 vol. % - Si: 60 vol. % Baked at 1250° C. for 1 Hour Temperature Current Voltage Resistance Volume (° C.) (A) (V) (Ω) Resistivity (Ω .Math. cm) 34 0.100 5.350 × 10.sup.−2 5.4 × 10.sup.−1 1.4 × 10.sup.−1 100 0.100 5.200 × 10.sup.−2 5.2 × 10.sup.−1 1.3 × 10.sup.−1 200 0.100 5.250 × 10.sup.−2 5.3 × 10.sup.−1 1.3 × 10.sup.−1 300 0.100 4.745 × 10.sup.−2 4.8 × 10.sup.−1 1.2 × 10.sup.−1 400 0.100 4.020 × 10.sup.−2 4.0 × 10.sup.−1 1.0 × 10.sup.−1 500 0.100 3.670 × 10.sup.−2 3.7 × 10.sup.−1 9.3 × 10.sup.−2 600 0.100 3.660 × 10.sup.−2 3.7 × 10.sup.−1 9.3 × 10.sup.−2

(275) TABLE-US-00032 TABLE 32 Volume Resistivity at Each Temperature of Composition No. 14: MoSi.sub.2: 30 vol. % - Si: 70 vol. % Baked at 1250° C. for 1 Hour Temperature Current Voltage Resistance Volume (° C.) (A) (V) (Ω) Resistivity (Ω .Math. cm) 34 0.010 2.283 × 10.sup.−1 2.3 × 10.sup.1 5.8 × 10.sup.0 .sup.  100 0.010 1.368 × 10.sup.−1 1.4 × 10.sup.1 3.5 × 10.sup.0 .sup.  200 0.010 6.110 × 10.sup.−2 6.1 × 10.sup.0 1.6 × 10.sup.0 .sup.  300 0.010 3.670 × 10.sup.−2 3.7 × 10.sup.0 9.3 × 10.sup.−1 400 0.010 2.290 × 10.sup.−2 2.3 × 10.sup.0 5.8 × 10.sup.−1 500 0.010 1.700 × 10.sup.−2 1.7 × 10.sup.0 4.3 × 10.sup.−1 600 0.010 1.400 × 10.sup.−2 1.4 × 10.sup.0 3.6 × 10.sup.−1

(276) From Table 31, it is seen that the volume resistivity of the baked product of Composition No. 13 is at a level of 10.sup.−2 to 10.sup.−1 Ωcm, which is slightly higher than that of Composition No. 12, but shows that the composition is a conductor. In addition, the temperature dependence of volume resistivity is low. Meanwhile, from Table 32, it is seen that the volume resistivity of Composition No. 14 baked at 1250° C. for 1 hour is at a level of 10.sup.−1 to several Ωcm, which is slightly higher than that of Composition No. 13, but shows that the composition is also a conductor. The reason that the volume resistivity of Composition No. 14 is slightly higher than those of Compositions 12 and 13 is that the content of MoSi.sub.2 is low.

(277) FIG. 18a shows the results of the series of volume resistivity shown in Tables 30 to 32.

(278) From FIG. 18a, Composition No. 14 is recognized to have temperature dependence of volume resistivity, while the temperature dependence of volume resistivity of each of Composition No. 12 and Composition No. 13 is found to be as low as within measurement errors.

(279) Table 33 and Table 34 below show the volume resistivities of Composition No. 12 and Composition No. 13 baked at 1350° C. for 4 hours, respectively.

(280) TABLE-US-00033 TABLE 33 Volume Resistivity at Each Temperature of Composition No. 12: MoSi.sub.2: 50 vol. % - Si: 50 vol. % Baked at 1350° C. for 4 Hours Temperature Current Voltage Resistance Volume (° C.) (A) (V) (Ω) Resistivity (Ω .Math. cm) 32 1.000 2.350 × 10.sup.−2 2.4 × 10.sup.−2 5.9 × 10.sup.−3 100 1.000 2.650 × 10.sup.−2 2.7 × 10.sup.−2 6.7 × 10.sup.−3 200 1.000 3.520 × 10.sup.−2 3.5 × 10.sup.−2 8.9 × 10.sup.−3 300 1.000 4.000 × 10.sup.−2 4.0 × 10.sup.−2 1.0 × 10.sup.−2 400 1.000 4.660 × 10.sup.−2 4.7 × 10.sup.−2 1.2 × 10.sup.−2 500 1.000 5.080 × 10.sup.−2 5.1 × 10.sup.−2 1.3 × 10.sup.−2 600 1.000 5.640 × 10.sup.−2 5.6 × 10.sup.−2 1.4 × 10.sup.−2

(281) TABLE-US-00034 TABLE 34 Volume Resistivity at Each Temperature of Composition No. 13: MoSi.sub.2: 40 vol. % - Si: 60 vol. % Baked at 1350° C. for 4 Hours Temperature Current Voltage Resistance Volume (° C.) (A) (V) (Ω) Resistivity (Ω .Math. cm) 34 1.000 3.848 × 10.sup.−1 3.9 × 10.sup.−1 9.8 × 10.sup.−2 100 1.000 3.640 × 10.sup.−1 3.6 × 10.sup.−1 9.3 × 10.sup.−2 200 1.000 4.232 × 10.sup.−1 4.2 × 10.sup.−1 1.1 × 10.sup.−1 300 1.000 4.460 × 10.sup.−1 4.5 × 10.sup.−1 1.1 × 10.sup.−1 400 1.000 3.743 × 10.sup.−1 3.7 × 10.sup.−1 9.6 × 10.sup.−2 500 1.000 3.045 × 10.sup.−1 3.1 × 10.sup.−1 7.8 × 10.sup.−2 600 1.000 2.530 × 10.sup.−1 2.5 × 10.sup.−1 6.5 × 10.sup.−2

(282) Table 33 shows that the volume resistivity of Composition No. 12 is at a level as low as 10.sup.−3 to 10.sup.−2 Ωcm, which shows that the composition is a conductor. Meanwhile, from Table 34, it is seen that the baked product of Composition No. 13 has a volume resistivity at a level of 10.sup.−2 to 10.sup.−1 Ωcm, which is slightly higher than that of Composition No. 12, but shows that the composition is also a conductor.

(283) Table 35 below shows the volume resistivity of Composition No. 14 baked at 1350° C. for 4 hours.

(284) TABLE-US-00035 TABLE 35 Volume Resistivity at Each Temperature of Composition No. 14: MoSi.sub.2: 30 vol. % - Si: 70 vol. % Baked at 1350° C. for 4 Hours Temperature Current Voltage Resistance Volume (° C.) (A) (V) (Ω) Resistivity (Ω .Math. cm) 32 0.100 5.835 × 10.sup.−1 5.8 × 10.sup.0 .sup.  1.5 × 10.sup.0 .sup.  100 0.100 5.230 × 10.sup.−1 5.2 × 10.sup.0 .sup.  1.3 × 10.sup.0 .sup.  200 0.100 4.195 × 10.sup.−1 4.2 × 10.sup.0 .sup.  1.1 × 10.sup.0 .sup.  300 0.100 2.714 × 10.sup.−1 2.7 × 10.sup.0 .sup.  6.9 × 10.sup.−1 400 0.100 1.431 × 10.sup.−1 1.4 × 10.sup.0 .sup.  3.7 × 10.sup.−1 500 0.100 7.030 × 10.sup.−2 7.0 × 10.sup.−1 1.8 × 10.sup.−1 600 0.100 4.870 × 10.sup.−2 4.9 × 10.sup.−1 1.2 × 10.sup.−1

(285) From Table 35, it is seen that the volume resistivity is increased as compared to that of Composition No. 13 by a level of 10.sup.−1 to several Ωcm, but the baked body of Composition No. 14 also maintains conductivity.

(286) FIG. 18b is a diagram obtained by plotting the measurement results of the series of volume resistivity shown in Tables 33 to 35.

(287) From FIG. 18b, it is seen that the volume resistivity of Composition No. 14 tends to slightly decrease with an increase in the temperature, but has low temperature dependence and thus is a permissible value. Meanwhile, the volume resistivity of each of Composition No. 12 and Composition No. 13 is within measurement errors, and thus is recognized to have no temperature dependence.

(288) Tables 36 and 37 below show the volume resistivities of Composition No. 12 and Composition No. 13 baked at 1400° C. for 4 hours, respectively.

(289) TABLE-US-00036 TABLE 36 Volume Resistivity at Each Temperature of Composition No. 12: MoSi.sub.2: 50 vol. % - Si: 60 vol. % Baked at 1400° C. for 4 Hours Temperature Current Voltage Resistance Volume (° C.) (A) (V) (Ω) Resistivity (Ω .Math. cm) 32 1.000 9.380 × 10.sup.−3 9.4 × 10.sup.−3 2.4 × 10.sup.−3 100 1.000 1.150 × 10.sup.−2 1.2 × 10.sup.−2 2.9 × 10.sup.−3 200 1.000 1.530 × 10.sup.−2 1.5 × 10.sup.−2 3.9 × 10.sup.−3 300 1.000 1.870 × 10.sup.−2 1.9 × 10.sup.−2 4.7 × 10.sup.−3 400 1.000 2.166 × 10.sup.−2 2.2 × 10.sup.−2 5.5 × 10.sup.−3 500 1.000 2.320 × 10.sup.−2 2.3 × 10.sup.−2 5.9 × 10.sup.−3 600 1.000 2.300 × 10.sup.−2 2.3 × 10.sup.−2 5.8 × 10.sup.−3

(290) TABLE-US-00037 TABLE 37 Volume Resistivity at Each Temperature of Composition No. 13: MoSi.sub.2: 40 vol. % - Si: 60 vol. % Baked at 1400° C. for 4 Hours Temperature Current Voltage Resistance Volume (° C.) (A) (V) (Ω) Resistivity (Ω .Math. cm) 31 1.000 1.792 × 10.sup.−1 1.8 × 10.sup.−1 4.6 × 10.sup.−2 100 1.000 1.974 × 10.sup.−1 2.0 × 10.sup.−1 5.0 × 10.sup.−2 200 1.000 2.325 × 10.sup.−1 2.3 × 10.sup.−1 5.9 × 10.sup.−2 300 1.000 2.290 × 10.sup.−1 2.3 × 10.sup.−1 5.9 × 10.sup.−2 400 1.000 1.820 × 10.sup.−1 1.8 × 10.sup.−1 4.7 × 10.sup.−2 500 1.000 1.301 × 10.sup.−1 1.3 × 10.sup.−1 3.3 × 10.sup.−2 600 1.000 9.800 × 10.sup.−2 9.8 × 10.sup.−2 2.5 × 10.sup.−2

(291) From Table 36, it is seen that the volume resistivity of Composition No. 12 baked at 1400° C. for 4 hours is at a level as low as up to 10.sup.−3 Ωcm, which shows that the baked product is a conductor. Meanwhile, from Table 37, it is seen that the volume resistivity of the baked product of Composition No. 13 is at a level of up to 10.sup.−2 Ωcm, which is slightly higher than that of Composition No. 12, but shows that the baked product is also a conductor.

(292) Table 38 below shows the volume resistivity of Composition No. 14 baked at 1400° C. for 4 hours.

(293) TABLE-US-00038 TABLE 38 Volume Resistivity at Each Temperature of Composition No. 14: MoSi.sub.2: 30 vol. % - Si: 70 vol. % Baked at 1400° C. for 4 Hours Temperature Current Voltage Resistance Volume (° C.) (A) (V) (Ω) Resistivity (Ω .Math. cm) 31 0.100 1.552 × 10.sup.−1 1.6 × 10.sup.0 .sup.  4.0 × 10.sup.−1 100 0.100 1.506 × 10.sup.−1 1.5 × 10.sup.0 .sup.  3.8 × 10.sup.−1 200 0.100 1.421 × 10.sup.−1 1.4 × 10.sup.0 .sup.  3.6 × 10.sup.−1 300 0.100 1.151 × 10.sup.−1 1.2 × 10.sup.0 .sup.  2.9 × 10.sup.−1 400 0.100 7.500 × 10.sup.−2 7.5 × 10.sup.−1 1.9 × 10.sup.−1 500 0.100 4.220 × 10.sup.−2 4.2 × 10.sup.−1 1.1 × 10.sup.−1 600 0.100 2.740 × 10.sup.−2 2.7 × 10.sup.−1 7.0 × 10.sup.−2

(294) From Table 38, it is seen that the volume resistivity of the baked product is also at a level of 10.sup.−2 to 10.sup.−1 Ωcm, which shows that the baked product is a conductor.

(295) FIG. 18c is a diagram obtained by plotting the volume resistivity shown in Tables 36 to 38 relative to the temperature.

(296) From FIG. 18c, each of Compositions No. 12, 13, and 14 is found to have no temperature dependence of volume resistivity as it is within experimental errors.

(297) Table 39 below shows a data list of the above results.

(298) TABLE-US-00039 TABLE 39 Volume Resistivites of Test Pieces with Different Compositions and Baking Conditions Composition Baking Measurement Temperature (° C.) No. Conditions 30 100 200 300 400 500 600 12 1250° C. × 1 Hr 4.5 × 10.sup.−3 5.5 × 10.sup.−3 7.2 × 10.sup.−3 8.6 × 10.sup.−3 9.6 × 10.sup.−3 1.1 × 10.sup.−2 1.2 × 10.sup.−2 13 1250° C. × 1 Hr 1.4 × 10.sup.−1 1.3 × 10.sup.−1 1.3 × 10.sup.−1 1.2 × 10.sup.−1 1.0 × 10.sup.−1 9.3 × 10.sup.−2 9.3 × 10.sup.−2 14 1250° C. × 1 Hr 5.8 × 10.sup.0 3.5 × 10.sup.0 1.6 × 10.sup.0 9.3 × 10.sup.−1 5.8 × 10.sup.−1 4.3 × 10.sup.−1 3.6 × 10.sup.−1 12 1350° C. × 4 Hr 5.9 × 10.sup.−3 6.7 × 10.sup.−3 8.9 × 10.sup.−3 1.0 × 10.sup.−2 1.2 × 10.sup.−2 1.3 × 10.sup.−2 1.4 × 10.sup.−2 13 1350° C. × 4 Hr 9.8 × 10.sup.−2 9.3 × 10.sup.−2 1.1 × 10.sup.−1 1.1 × 10.sup.−1 9.6 × 10.sup.−2 7.8 × 10.sup.−2 6.5 × 10.sup.−2 14 1350° C. × 4 Hr 1.5 × 10.sup.0 1.3 × 10.sup.0 1.1 × 10.sup.0 6.9 × 10.sup.−1 3.7 × 10.sup.−1 1.8 × 10.sup.−1 1.2 × 10.sup.−1 12 1400° C. × 4 Hr 2.4 × 10.sup.−3 2.9 × 10.sup.−3 3.9 × 10.sup.−3 4.7 × 10.sup.−3 5.5 × 10.sup.−3 5.9 × 10.sup.−3 5.8 × 10.sup.−3 13 1400° C. × 4 Hr 4.6 × 10.sup.−2 5.0 × 10.sup.−2 5.9 × 10.sup.−2 5.9 × 10.sup.−2 4.7 × 10.sup.−2 3.3 × 10.sup.−2 2.5 × 10.sup.−2 14 1400° C. × 4 Hr 4.0 × 10.sup.−1 3.8 × 10.sup.−1 3.6 × 10.sup.−1 2.9 × 10.sup.−1 1.9 × 10.sup.−1 1.1 × 10.sup.−1 7.0 × 10.sup.−2

(299) Table 40 and FIG. 19a show the volume resistivity at room temperature based on Table 39.

(300) TABLE-US-00040 TABLE 40 Volume Resistivity (Unit: Ω cm) at Room Temperature Depending on Content of MoSi.sub.2 and Baking Temperature Composition No. 14 13 12 Vol. % of Content of MoSi.sub.2 30 40 50 1250° C. × 1 Hr 5.786 0.135 0.005 1350° C. × 4 Hr 1.491 0.098 0.006 1400° C. × 4 Hr 0.395 0.046 0.002

(301) From Table 40 and FIG. 19a, it is seen that the volume resistivity tends to decrease as the content of MoSi.sub.2 is higher. In addition, the volume resistivity tends to decrease with an increase in the baking temperature, and with respect to the MoSi.sub.2/Si-based material, densification progresses with an increase in the baking temperature. Thus, a decrease in the porosity is found to be a cause of a decrease in the volume resistivity.

(302) Likewise, Table 41 below and FIG. 19b show the volume resistivity at 600° C. based on Table 39.

(303) TABLE-US-00041 TABLE 41 Volume Resistivity (Unit: Ω cm) at 600° C. depending on Content of MoSi.sub.2 and Baking Temperature Composition No. 14 13 12 Vol. % of Content of MoSi.sub.2 30 40 50 1250° C. × 1 Hr 0.355 0.093 0.012 1350° C. × 4 Hr 0.124 0.065 0.014 1400° C. × 4 Hr 0.070 0.025 0.006

(304) From Table 41 and FIG. 19b, it is seen that the volume resistivity at 600° C. tends to be similar to that at room temperature.

(305) [Measurement of Four-Point Flexural Strength and Results Thereof]

(306) Next, the flexural strength of each of baked bodies made of MoSi.sub.2/SiC/Si-based, MoSi.sub.2/SiC-based, and MoSi.sub.2/Si-based composite materials is evaluated.

(307) (Measurement of Four-Point Flexural Strength at Room Temperature)

(308) As the experimental method, a four-point bending test was performed at room temperature in conformity with JIS R1601 using test pieces, which have been obtained by baking eight types of compositions of materials made of two or three of MoSi.sub.2/SiC/Si, in an Ar atmosphere at 1500° C. for 4 hours. Table 42 below shows the compounding ratio of the components of each sintered body and the flexural strength thereof at room temperature, and FIG. 20 shows the correlation between the content of MoSi.sub.2 and the four-point flexural strength.

(309) TABLE-US-00042 TABLE 42 Copositions of Sintered Bodies and Four-Point Flexural Strengths thereof at Room Temperature Flexural Strength at Room Temperature Composition MoSi2 SiC Si N Mean Standard No. (Vol %) (Vol %) (Vol %) Number Value Deviation 3 90  0 10 10 57.7 5.0 8 80 10 10 10 50.8 8.4 7 70 20 10 10 34.1 4.6 6 60 30 10 10 27.1 4.0 5 50 40 10 10 15.8 0.9 1 50 50 0 10 14.0 1.9 4 45 45 10 10 11.6 0.7 2 40 30 30 10 22.7 2.5

(310) From Table 42 and FIG. 20, it is seen that the four-point flexural strength at room temperature (a mean value of N=10) of each of the eight types of compositions made of two or three of MoSi.sub.2/SiC/Si, which have been baked at 1500° C. for 4 hours, is 12 to 58 MPa, and the four-point flexural strength tends to increase with an increase in the content of MoSi.sub.2. This bending test shows the results of the test pieces baked at the same temperature for the same hours. Thus, it is considered that a further increase in the strength is possible if optimal baking conditions for each composition are clarified.

(311) (Measurement of Four-Point Flexural Strength at High Temperature)

(312) Next, the four-point flexural strength at high temperature of each of the baked bodies of the eight types of compositions is evaluated to study the possibility of the baked body as a material for an electrode terminal or an electrode film from the perspective of high-temperature strength.

(313) As the experimental method, a four-point bending test was performed at high temperature in conformity with JIS R1604 using eight sintered bodies of MoSi.sub.2/SiC/Si-based materials. It should be noted that N=5. Table 43 below shows the composition of each sintered body, the four-point flexural strength at high temperature, and the four-point flexural strength at room temperature. FIG. 21 shows the strength at a high temperature of 900° C. and the strength at room temperature as representative examples.

(314) TABLE-US-00043 TABLE 43 Compositions of Eight Types of Baked Bodies and Four-Point Flexural Strengths thereof at High Temperature (Room temperature is also shown for reference.) Mean Value of Flexural Strength (MPa) Comp- Room osition MoSi2 SiC Si Temp- No. (Vol %) (Vol %) (Vol %) 300° C. 600° C. 900° C. erature 3 90  0 10 60.5 57.8 58.7 57.7 8 80 10 10 45.1 53.7 49.1 50.8 7 70 20 10 37.7 32.6 31.6 34.4 6 60 30 10 24.5 28.9 25.8 27.1 5 50 40 10 17.9 17.8 25.8 15.8 1 50 50  0 19.2 20.8 19.7 14.0 4 45 45 10 12.0 11.9 13.3 11.6 2 40 30 30 27.6 27.8 36.2 22.7

(315) From Table 43, it is seen that the four-point flexural strengths at high temperatures of 300° C., 600° C., and 900° C. of the baked bodies of the eight types of compositions of the MoSi.sub.2/SiC/Si-based materials have no difference from those at room temperature, and there has been no decrease in the strength at high temperature in the current measurement temperature range. Thus, it is concluded that the present MoSi.sub.2/SiC/Si-based materials have strength that can withstand under the use environment of EHC and thus are novel materials that can be applied to an electrode terminal or an electrode film.

(316) (Measurement of Four-Point Flexural Strengths at Room Temperature of Baked Bodies of MoSi.sub.2/Si-Based Materials)

(317) Next, with respect to baked bodies made of two-component-based materials of MoSi.sub.2/Si, the four-point flexural strengths at room temperature of test pieces, which have been obtained through die casting, degreasing, and baking with the use of granulated powder, are evaluated.

(318) As the experimental method, a four-point bending test was performed at room temperature in conformity with JIS R1601 using test pieces, which have been obtained by baking three types of compositions of two-component-based materials of MoSi.sub.2/Si, in an Ar atmosphere at 1250 to 1450° C. Table 44 below shows the flexural strength at room temperature of each sintered body of MoSi.sub.2/S depending on the compounding ratio of the components and the baking temperature, and FIG. 22 shows the correlation between the baking temperature and the four-point flexural strength.

(319) TABLE-US-00044 TABLE 44 Four-Point Flexural Strengths (Unit: MPa) of Two-Component-based Materials of MoSi.sub.2/Si Depending on Baking Temperature Four-Point Flexural Strength at Room Temperature Mean Standard Comp- MoSi2 Si Baking N Value (MPa) osition (vol %) (vol %) Conditions Number (MPa) Deviation 12 50 50 1250° C. × 1 Hr 5 7.8 1.2 13 40 60 4 3.2 0.3 14 30 70 5 2.4 0.2 12 50 50 1350° C. × 4 Hr 5 9.3 1.1 13 40 60 5 6.8 1.0 14 30 70 5 7.5 1.2 12 50 50 1400° C. × 4 Hr 5 17.2 3.2 13 40 60 5 13.2 1.7 14 30 70 4 9.9 1.0 12 50 50 1450° C. × 4 Hr 13 40 60 14 30 70

(320) The four-point flexural strengths of sintered bodies, which have been produced by changing the composition ratio of MoSi.sub.2/Si and the baking temperature, were evaluated. From Table 44 and FIG. 22, it is seen that the strength is greater as the compounding ratio of MoSi.sub.2 is higher and as the baking temperature is higher. A baked body, which has been baked at 1400° C. for 4 hours, has a strength of 9.9 to 17.2 MPa. It should be noted that a product baked at 1450° C., which is greater than the melting point (1410° C.) of Si, had Si eluted from the surface of the test piece, and thus deformed. Thus, it was impossible to evaluate the strength.

(321) [Evaluation of Characteristics of Pores with Mercury Porosimeter]

(322) Next, the characteristics of the distribution of pores of baked bodies made of MoSi.sub.2/SiC/Si-based, MoSi.sub.2/SiC-based, and MoSi.sub.2/Si-based composite materials are evaluated with a mercury porosimeter.

(323) As the experimental method, eight samples of sintered bodies of MoSi.sub.2/SiC/Si-based composite materials are used to determine the sizes of all pores, the medium pore size (i.e., average pore size), the porosity, and a pore distribution curve using a mercury porosimeter method in conformity with JIS R1601. Table 45 below shows the characteristics of pores of the eight types of compositions and a pore size corresponding to the peak position, and FIG. 23 shows a pore distribution curve of a baked body of Composition No. 2 as a representative example of the eight types of compositions.

(324) TABLE-US-00045 TABLE 45 Compositions of Sintered Bodies, Characteristics of Pores, and Pore Size Corresponding to Peak Position Volume Comp- Composition of All Median Por- Pore Size (μm) osition (Vol %) Pores Pore osity Main Minor No. MoSi.sub.2 SiC Si (ml/g) Size (%) Peak Peak 3 90 10 0.027 8.28  9.9 8 4, 50, 200 8 80 10 10 0.016 7.32  5.4 4, 7 30, 200 7 70 20 10 0.052 4.24 15.4 5 20, 100 6 60 30 10 0.07  4.86 19.7 5 20, 100 5 50 40 10 0.087 4.06 22.1 4 30, 200 1 50 50 0.163 3.38 39.6 4 200 4 45 45 10 0.074 4.12 18.8 5 200 2 40 30 30 0.075 9.05 20.3 8 5, 200

(325) From Table 45 and FIG. 23, it is seen that the volume of all pores, the medium pore size (i.e., average pore size), and the porosity of each of the eight types of sintered bodies of MoSi.sub.2/SiC/Si-based materials (baked at 1500° C. for 4 hours) measured with a mercury porosimeter vary in the range of 0.016 to 0.163 ml/g, 3.38 to 9.05 μm, and 5.40 to 39.60%, respectively. In addition, the pore distribution curve has clarified that the main peak of the pore size is in the range of 4 to 8 μm.

(326) [Measurement of Change in Weight and Results Thereof]

(327) Next, an increase in the weight of each of the baked bodies of the MoSi.sub.2/SiC/Si-based, MoSi.sub.2/SiC-based, and MoSi.sub.2/Si-based composite materials due to high-temperature oxidation is measured to evaluate the oxidation resistance.

(328) As the experimental method, baked bodies of the eight types of compositions were machined into test pieces for measuring the amount of increase of oxidation, each having dimensions of a width of 5 mm×a thickness of 5 mm×a length of 30 mm. However, if the dimensions of some baked body were insufficient, the dimensions were reduced and the baked body was machined until a parallel plane appeared. Each of test pieces whose weights had been measured in advance was mounted on a plate of an Al.sub.2O.sub.3 sintered body and was loaded into a small box-shaped electric furnace, and then, the temperature was increased from the room temperature at a rate of 10° C./minute. The test piece was held in the atmosphere at 1000° C. for 24 hours, 48 hours, 96 hours, or 192 hours, and was cooled in the furnace. Upon termination of the oxidation test, the weight was measured again to determine the rate of weight increase from the initial weight. Table 46 below shows the results of oxidation tests at 1000° C. of the baked bodies of the eight types of compositions.

(329) TABLE-US-00046 TABLE 46 Results of Oxidation Test of Each Baked Body in Atmosphere at 1000° C. Heat Treatment Initial Weight after Rate of Composition Composition Temperature Treatment Weight Heat Weight No. (Vol %) (° C.) Time (Hr) (g) Treatment (g) Increase (%) 1 MoSi.sub.2:50 1000 24 1.89015 1.94057 2.67 —SiC:50 48 1.88934 1.95357 3.40 96 1.91736 2.01644 5.17 192 1.87093 2.02522 8.25 2 MoSi.sub.2:40 1000 24 1.88895 1.90268 0.73 —SiC:30 48 1.89237 1.91055 0.96 —Si:30 96 1.91326 1.93973 1.38 192 1.91972 1.95953 2.07 3 MoSi.sub.2:90 1000 24 1.92323 1.94167 0.96 —Si:10 48 1.95726 1.98126 1.23 96 1.97682 2.01099 1.73 192 1.96738 2.02224 2.79 4 MoSi.sub.2:45 1000 24 1.84022 1.86421 1.30 —SiC:45 48 1.82096 1.85208 1.71 —Si:10 96 1.80997 1.85461 2.47 192 1.81933 1.89177 3.98 5 MoSi.sub.2:50 1000 24 1.9101 1.9298 1.03 —SiC:40 48 1.8976 1.9264 1.52 —Si:10 96 1.9005 1.9403 2.09 192 1.8881 1.9524 3.41 6 MoSi.sub.2:60 1000 24 2.0340 2.0564 1.10 —SiC:30 48 2.0619 2.0920 1.46 —Si:10 96 2.0513 2.0913 1.95 192 2.0927 2.1574 3.09 7 MoSi.sub.2:70 1000 24 1.8958 1.9127 0.89 —SiC:20 48 1.9166 1.9390 1.17 —Si:10 96 1.9186 1.9497 1.62 192 1.9212 1.9701 2.55 8 MoSi.sub.2:80 1000 24 2.1046 2.1238 0.91 —SiC:10 48 2.1133 2.1378 1.16 —Si:10 96 2.1026 2.1353 1.56 192 2.0913 2.1407 2.36

(330) From the results in Table 46, the rates of weight increase in accordance with the heat treatment time of Compositions No. 1, 2, 3, and 4 and Compositions No. 5, 6, 7, and 8 are shown in FIGS. 24a and 24b, respectively.

(331) From FIG. 24a, the rates of weight increase due to oxidation are in the order of Composition No. 1>Composition No. 4>Composition No. 3>Composition No. 2, and the rates of weight increase are in conformity with the parabolic law. Further, it is found that the rate of weight increase of each of Compositions No. 2, 3, and 4, which have been subjected to heat treatment for 192 hours, excluding Composition No. 1, is less than or equal to 4%, and thus has excellent oxidation resistance. Meanwhile, from FIG. 24b, it is also found that the rate of weight increase of each of Compositions No. 5, 6, 7, and 8 due to oxidation is in conformity with the parabolic law, and is 2.4 to 3.4% after heat treatment for 192 hours. As the rates of weight increase due to oxidation are low, Compositions No. 5, 6, 7, and 8 are also found to be baked bodies with excellent oxidation resistance as with Compositions No. 2, 3, and 4.

(332) Next, Table 47 below shows data in Table 46 that is rearranged in order of decreasing amount of MoSi.sub.2, and FIG. 25 is a diagram obtained by plotting the data relative to the content of MoSi.sub.2.

(333) TABLE-US-00047 TABLE 47 Rates of Weight Increase of Compositions, Which Have Been Subjected to Heat Treatment in Atmosphere at 1000° C. for 192 Hours, Rearranged in order of Decreasing Amount of MoSi.sub.2 Compo- Rate of Weight sition No. MoSi.sub.2 (Vol %) SiC (Vol %) Si (Vol %) Increase (%) 3 90 0 10 2.79 8 80 10 10 2.36 7 70 20 10 2.55 6 60 30 10 3.09 1 50 50 0 8.25 5 50 40 10 3.41 4 45 45 10 3.98 2 40 30 30 2.07

(334) From Table 47 and FIG. 25, it is seen that the amount of increase of oxidation of six compositions excluding Compositions No. 1 and 2 tend to slightly decrease with an increase in the content of MoSi.sub.2. That is, it has been clarified that with respect to the MoSi.sub.2/SiC/Si-based composite materials, oxidation resistance improves as the amount of MoSi.sub.2 is larger. This is considered to be due to the fact that the oxidation resistance of the MoSi.sub.2 baked body is high.

(335) Next, Table 48 below shows the data that is rearranged in order of decreasing amount of SiC in the same way, and FIG. 26 is a diagram obtained by plotting the rate of weight increase relative to the content of SiC.

(336) TABLE-US-00048 TABLE 48 Rates of Weight Increase of Compositions, Which Have Been Subjected to Heat Treatment in Atmosphere at 1000° C. for 192 Hours, Rearranged in order of Decreasing Amount of SiC Compo- Rate of Weight sition No. SiC (Vol %) MoSi.sub.2 (Vol %) Si (Vol %) Increase (%) 1 50 50 0 8.25 4 45 45 10 3.98 5 40 50 10 3.41 6 30 60 10 3.09 2 30 40 30 2.07 7 20 70 10 2.55 8 10 80 10 2.36 3 0 90 10 2.79

(337) From Table 48 and FIG. 26, it is recognized that with respect to a composition whose SiC content is less than or equal to about 30 Vo. %, the rate of weight increase has no dependence on the SiC amount. However, when the amount of SiC further increases, the rate of weight increase also increases, and the rate of weight increase of Composition No. 1 is as high as 8.25%, which is about double the rates of weight increase of the seven other compositions. Herein, the rate of weight increase of Composition No. 1 is considered to be due to the oxidation reaction of SiC.fwdarw.SiO.sub.2.

(338) [Evaluation of Oxidation Resistance]

(339) Next, the constituent phase of the inside of each of baked bodies made of MoSi.sub.2/SiC/Si-based, MoSi.sub.2/SiC-based, and MoSi.sub.2/Si-based composite materials is identified and the amount of oxide generated is analyzed through semi-quantitative XRD analysis to evaluate the oxidation resistance.

(340) As the experimental method, each of baked bodies of Compositions No. 2 and 5 having dimensions of 3 mm×5 mm×30 mm was cut at the center, and the cut surface was polished with water to analyze the polished surface through XRD. In the XRD analysis, only the center portion of each test piece was irradiated with a beam narrowed down to 800 μm. When the angle of rotation of the goniometer is taken into consideration, the test piece should be irradiated with an X-ray at an elliptic region with a minor axis of about 800 μm and a major axis of 3 mm, so that information on the region is obtained.

(341) Measurement conditions of the XRD analysis are shown in Table 7 above.

(342) With respect to the quantitative ratio of SiO.sub.2 (cristobalite) to MoSi.sub.2, the height (a) of the (101) diffraction peak of SiO.sub.2 (cristobalite) where 2θ=25.6° and the height (b) of the (002) diffraction peak of MoSi.sub.2 where 2θ=26.3° were measured as shown in FIG. 27, and a/b was determined to the relative amount of SiO.sub.2 (cristobalite). It should be noted that in order to perform more accurate quantitative determination, a known amount of each powder should be mixed to create a calibration curve of an X-ray peak ratio/mixed amount in advance. This time, however, semi-quantitative analysis was performed using a simple method such as the one described above.

(343) The upper and lower diagrams of FIG. 28a show XRD diagrams of the insides of baked bodies of Composition No. 2 (MoSi.sub.2: 50 vol. %—SiC: 40 vol. %—Si: 10 vol. %), which have not been subjected to oxidation treatment and subjected to oxidation treatment in the atmosphere at 1000° C. for 192 hours, respectively.

(344) From FIG. 28a, it is found that the constituent phases of the insides of the products, which have been subjected to heat treatment and not subjected to heat treatment, are similar, and SiO.sub.2 (cristobalite) is detected in addition to the starting materials.

(345) The upper and lower diagrams of FIG. 28b show XRD diagrams of the insides of baked bodies of Composition No. 5 (MoSi.sub.2: 50 vol. %—SiC: 40 vol. %—Si: 10 vol. %), which have not been subjected to oxidation treatment and subjected to oxidation treatment in the atmosphere at 1000° C. for 192 hours, respectively.

(346) From FIG. 28b, it is found that only the starting materials are detected from the non-oxidized product of Composition No. 5, while the oxidized product also contains trace amounts of SiO.sub.2 (cristobalite).

(347) From the above results, the constituent phases of the insides of the baked bodies of Composition No. 2 and Composition No. 5 are shown in Table 49 below. It should be noted that the constituent phases of the surfaces are also shown for reference.

(348) TABLE-US-00049 TABLE 49 Constituent Phases of Insides and Surfaces of Composition No. 2 and Composition No. 5 Inside Surface (for Reference) Product Product Sample Unproc- Processed at Unproc- Processed at Composition essed 1000° C. essed 1000° C. (Vol %) Product for 192 Hr Product for 192 Hr No. 2: MoSi.sub.2 MoSi.sub.2 MoSi.sub.2 MoSi.sub.2 MoSi.sub.2: 40 - SiC SiC SiC SiC SiC: 30 - Si Si Si Si Si: 30 SiO.sub.2 SiO.sub.2 SiO.sub.2 SiO.sub.2 (Cristobalite) (Cristobalite) (Cristobalite) (Cristobalite) No. 5: MoSi.sub.2 MoSi.sub.2 MoSi.sub.2 MoSi.sub.2 MoSi.sub.2: 50 - SiC SiC SiC SiC, Si SiC: 40 - Si Si Si Mo.sub.5Si.sub.3 Si: 10 SiO.sub.2 SiO.sub.2 (Cristobalite) (Cristobalite) MoO.sub.2 (Trace) MoO.sub.2 (Trace)

(349) From Table 49, SiO.sub.2 (cristobalite) is detected from all samples excluding the inside and the surface of unprocessed Composition No. 5.

(350) The oxidation resistance of the baked body of the MoSi.sub.2/SiC/Si-based composite material was attempted to be determined through semi-quantitative analysis of the amount of SiO.sub.2 (cristobalite) generated relative to MoSi.sub.2. That is, Table 50 below and FIG. 29 show the (SiO.sub.2(101) peak length(a)/MoSi.sub.2(002) peak length(b)) value, that is, the a/b value determined from the XRD diagram as shown in FIG. 27.

(351) TABLE-US-00050 TABLE 50 a/b Value of Each Sample Surface Inside Product Product Sample Unproc- Processed at Unproc- Processed at Composition essed 1000° C. essed 1000° C. (Vol %) Product for 192 Product for 192 No. 2: 0.139 0.424 0.06 0.08 MoSi.sub.2: 40 - SiC: 30 - Si: 30 No. 5: 0 0.063 0 0.033 MoSi.sub.2: 50 - SiC: 40 - Si: 10

(352) From Table 50 and FIG. 29, it is concluded that the inside of the baked body of the MoSi.sub.2/SiC/Si-based material is less easily oxidized than the surface thereof from the perspective of semi-quantitative analysis. Further, it is also found that as the a/b value of Composition No. 5 is lower than that of Composition No. 2, a baked body that contains a higher content of MoSi.sub.2 is less easily oxidized. Further, as the amount of MoO.sub.2 is found to be trace from the XRD diagram, it is considered that passivation of MoSi.sub.2 has been generated, and thus, a baked body of a composite material that contains a large amount of passivated MoSi.sub.2 has higher oxidation resistance.

(353) [Evaluation of Thermal Expansion Characteristics]

(354) Next, the thermal expansion characteristics of baked bodies made of MoSi.sub.2/SiC/Si-based, MoSi.sub.2/SiC-based, and MoSi.sub.2/Si-based composite materials are evaluated.

(355) As the experimental method, baked bodies of the eight types of Compositions No. 1 to 8 each having a width of 4 mm×a thickness of 3 mm×a length of 48 mm were processed into test pieces for measurement each having width of 4 mm×a thickness of 3 mm×a length of 20 mm, and then, linear expansion (%) and the average linear thermal expansion coefficient was determined at room temperature to 900° C. The rate of temperature increase was set to 10° C./minute and measurement was performed in a N.sub.2 atmosphere. Sapphire was used as a reference sample, and an R-type thermocouple was used as a thermocouple for measuring the temperature. The linear expansion (%) and the average linear thermal expansion (α) at room temperature tr to the measurement temperature t (° C.) were determined from Formulae 2 and 3 below.
Linear thermal expansion(%)=(ΔL/Lr)×100  (Formula 2)
Average linear thermal expansion coefficient(α)=(1/Lr)×(Lt−Lr)/(t−tr)  (Formula 3)

(356) Herein, Lr represents the length of a sample at room temperature, Lt represents the length of the sample at the measurement temperature, t represents the measurement temperature, and tr represents the room temperature (30° C.). The device used for the measurement is a device that uses a differential thermal expansion scheme and is able to detect difference in the amount of expansion between a sample and a reference sample whose expansion coefficient is known in advance, as a measurement system including a support jig and the like.

(357) ΔL that is the amount of expansion of the sample was determined from Formula 4 below.
ΔL=ΔLM−ΔLB+ΔLR  (Formula 4)

(358) Herein, ΔLM represents the amount of expansion from the room temperature to t (° C.) of the entire measurement system obtained in the measurement of a sample, ΔLR represents the amount of expansion of a reference sample from the room temperature to t(° C.), and ΔLB represents the amount of expansion obtained in a blank test (which corresponds to the amount of expansion of a support jig and the like). For the blank test, two reference samples with the same length were used, and measurement was performed at the same rate of temperature increase as that in the measurement of the sample.

(359) FIGS. 30a to 30h show the linear expansion curves of the baked bodies of Compositions No. 1 to No. 8, respectively.

(360) From FIGS. 30a to 30h, it is found that expansion of each sample increases almost linearly with an increase in the temperature, and no change point in the expansion is recognized in the range of from the room temperature to 900° C.

(361) Table 51 shows the measurement results of the linear thermal expansion (%) of Compositions No. 1 to No. 8 in each temperature range. Further, Table 52 shows the thermal expansion coefficient (i.e., average linear thermal expansion coefficient) in each temperature range.

(362) TABLE-US-00051 TABLE 51 Linear Thermal Expansion (%) of Baked Bodies of Compositions No. 1 to No. 8 Measurement Composition Temperature (° C.) No. 1 2 3 4 5 6 7 8 30-300 0.16 0.15 0.21 0.16 0.17 0.16 0.19 0.20 30-400 0.24 0.22 0.29 0.23 0.24 0.23 0.27 0.29 30-500 0.31 0.28 0.38 0.30 0.31 0.30 0.35 0.37 30-600 0.38 0.35 0.46 0.37 0.38 0.37 0.43 0.45 30-700 0.46 0.42 0.55 0.45 0.46 0.44 0.51 0.54 30-800 0.54 0.48 0.64 0.52 0.53 0.51 0.60 0.63 30-900 0.61 0.55 0.73 0.60 0.61 0.59 0.68 0.72

(363) TABLE-US-00052 TABLE 52 Thermal Expansion Coefficients (×10.sup.−6/° C.) of Baked Bodies of Compositions No. 1 to No. 8 Measurement Composition Temperature (° C.) No. 1 2 3 4 5 6 7 8 30-300 6.0 5.7 7.7 5.9 6.2 6.0 7.1 7.5 30-400 6.3 5.9 7.9 6.2 6.4 6.2 7.3 7.7 30-500 6.6 6.0 8.0 6.4 6.6 6.4 7.4 7.9 30-600 6.7 6.1 8.2 6.5 6.7 6.5 7.5 8.0 30-700 6.8 6.2 8.2 6.7 6.8 6.6 7.6 8.1 30-800 7.0 6.3 8.3 6.8 6.9 6.7 7.7 8.2 30-900 7.1 6.4 8.4 6.9 7.0 6.8 7.8 8.3

(364) From Tables 51 and 52, it is found that each of the linear expansion coefficient and the thermal expansion coefficient tends to increase in the higher temperature range.

(365) Table 53 and FIG. 31 show the correlation of the thermal expansion coefficient relative to the content of MoSi.sub.2 of each of the eight compositions.

(366) TABLE-US-00053 TABLE 53 Content of MoSi.sub.2 and Thermal Expansion Coefficient Composition MoSi.sub.2 SiC Si Thermal Expansion Coefficient (×10.sup.−6/° C.) No. (Vol %) (Vol %) (Vol %) 30-300° C. 30-600° C. 30-900° C. (*)Calculated 3 90  0 10 7.7 8.2 8.4 7.8 8 80 10 10 7.5 8.0 8.3 7.3 7 70 20 10 7.1 7.5 7.8 6.7 6 60 30 10 6.0 6.5 6.8 6.2 5 50 40 10 6.2 6.7 7.0 5.7 1 50 50 0 6.0 6.7 7.1 5.6 4 45 45 10 5.0 6.5 6.9 5.4 2 40 30 30 5.7 6.1 6.4 5.3 (*)Calculated values are those determined based on the law of mixture using the values in the document: MoSi.sub.2: 8.3, SiC: 2.9, and Si: 3.9 (×10.sup.−6/° C.)

(367) From Table 53 and FIG. 31, it is found that the thermal expansion coefficients of the materials at 30 to 300° C. are quite close to the values calculated based on the law of mixture using data on the respective materials in the document. Meanwhile, it is found that the thermal expansion coefficients of the composite materials at 30 to 600° C. and 30 to 900° C. are controllable within the ranges of 6.1 to 8.2×10.sup.−6/° C. and 6.4 to 8.4×10.sup.−6/° C., respectively. In view of the fact that the average thermal expansion coefficient at 30 to 900° C. of a honeycomb substrate that is mainly considered is 4.7 to 4.8×10.sup.−6/° C., a thermal expansion coefficient can be controlled to a value that is close to the value of the substrate depending on the composition selected. Thus, a composite material that is advantageous in terms of a bonding face with a substrate has been developed.

(368) (Regarding Thermal Expansion Coefficients of Baked Bodies of MoSi.sub.2/Si-Based Composite Materials)

(369) Next, with respect to baked bodies of MoSi.sub.2/Si-based composite materials, the thermal expansion coefficients at room temperature to 900° C. of baked bodies with different compositions and baking conditions are measured to determine whether or not the two-component-based composite materials can be applied to an electrode terminal, an electrode film, and a bonding material.

(370) As the experimental method, sintered bodies of three types of compositions of MoSi.sub.2/Si-based materials were machined into test pieces for measurement each having a width of 4 mm×a thickness of 3 mm×a length of 20 mm, and the test pieces were mounted on a thermo-mechanical analyzer. Then, linear thermal expansion coefficients at room temperature to 900° C. were measured under an N.sub.2 atmosphere.

(371) Table 54 shows the thermal expansion coefficients in each temperature range of the test pieces of the three types of different compositions that have been obtained under three different baking conditions, and FIG. 32 shows the average linear expansion coefficients of the products baked at 1400° C. for 4 hours.

(372) TABLE-US-00054 TABLE 54 Thermal Expansion Coefficients (×10.sup.−6/° C.) of Baked Bodies of Three Types of Compositions of Mosi.sub.2/Si-Based Composite Materials Measurement Baked at 1250° Baked at 1350° Baked at 1400° Temperature (° C.) C. for 1 Hr C. for 4 Hr C. for 4 Hr MoSi.sub.2 (Vol. %) 50 40 30 50 40 30 50 40 30 30-300 5.8 5.3 4.7 6.1 5.5 4.9 5.9 5.3 5.0 30-600 6.5 5.9 5.4 6.5 5.8 5.3 6.3 5.7 5.4 30-900 6.7 6.2 5.7 6.5 5.9 5.4 6.5 5.9 5.4

(373) From Table 54 and FIG. 32, it is found that the average thermal expansion coefficients at room temperature to 900° C. of the test pieces of the three types of compositions are 5.4 to 6.7×10.sup.−6/° C. Meanwhile, the thermal expansion coefficient at 30 to 900° C. of a honeycomb substrate for EHC made of SiC/Si, which is currently considered, is 4.7 to 4.8×10.sup.−6/° C. As there is only small difference between the thermal expansion coefficients, it can be said that the present MoSi.sub.2/Si-based composite materials can be applied to an electrode terminal and an electrode film, and further to a bonding material for an electrode and an electrode film from the perspective of the thermal expansion coefficient.

(374) Although the embodiments of the present invention have been described in detail with reference to the drawings, specific configurations are not limited to those described in the embodiments. Any design changes and the like that are within the spirit and scope of the present invention fall within the range of the present invention.

REFERENCE SIGNS LIST

(375) 1 Honeycomb substrate 1a Cell wall 1A Split part 2 Electrode film 3 Electrode terminal 4 External electrode 5 External circuit 5a Cable 5b Power supply 6 Outer tube (i.e., metal casing) 7 Bonding material 10, 10A, 10B Electrically heated catalytic converter (EHC)