Radiant artificial lunar lights having effective elements for growing plants

Abstract

The present invention relates to the radiant artificial lunar light system that contains effective elements for the growth of plants. To explain more specifically, the radiant artificial lunar light system emits lights containing the main mineral materials distributed on the oceanic region of the moon, such as Si, Ti, Fe, Mg, Ca, Na, K, P, Mn, Cr, etc. each doped with a doner by the plural PN bond-type semiconductors' photon device modules; and plural PN bond-type semiconductors' photon device modules; and plural PN bond-type semiconductors' LED modules emitting lights of certain intensity, in order to form the radiant artificial lunar light system. If this system is turned into operation, using the microcomputer equipped with a means to control, controlling the wavelengths and luminous intensity, the radiant artificial lunar lights similar in nature (spectra) to the lights emitted from the oceanic and highland regions of the moon are made available so that the artificial lunar lights can supply the plants with the mineral elements for the plants to grow more effectively.

Claims

1. A radiant artificial lunar light system comprising: a photon energy core which includes high photon energy PN bond-type semiconductor photon device modules, each doped with mineral elements for plant growth; and a luminous intensity core which includes a plurality of PN bond-type semiconductors' luminous intensity-centered photon device modules that are controlled by a microcomputer, wherein the microcomputer is configured to control luminous intensity of artificial lunar lights emitted to the plants.

2. The radiant artificial lunar light system as claimed in claim 1, wherein the artificial lunar light system is characteristic in that it has the photon energy core consisting of the PN bond-type semiconductors' light-emitting device modules and the luminous intensity core consisting of the PN bond-type light-emitting device modules that emit lights of certain radiance so that it contains effective elements for the growth of plants.

3. The radiant artificial lunar light system as claimed in claim 1, wherein the radiant artificial lunar light system is characteristic in that it contains photon device modules of a plural PN bond-type semiconductors' light-emitting device doped with donors of mineral elements contained therein for the plants to grow effectively.

4. The radiant artificial lunar light system as claimed in claim 1, wherein the radiant artificial lunar light system contains photon device modules of the PN bond-type semiconductors' light-emitting device with designed wavelengths, and the photon device modules with designed radiance that emits lights, for effective growth of plants.

5. The radiant artificial lunar light system as claimed in claim 1, wherein mineral elements doping the PN bond-type semiconductors' light-emitting device are each one of the Si, Ti, Al, Fe, Mg, Ca, Na, K, P, Mn, Cr, having the effective elements for the growth of plants.

6. The radiant artificial lunar light system as claimed in claim 1, wherein the radiant lunar light system composing the PN bond-type semiconductors' light-emitting device is each doped for the effective growth of plants.

7. The radiant artificial lunar light system as claimed in claim 1, wherein the radiant artificial lunar light system contains the microcomputer equipped with a program to control the radiant artificial lunar light system for effective growth of plants.

8. The radiant artificial lunar light system as claimed in claim 1, wherein the artificial lunar lights emitted from the radiant artificial lunar light system are luminescent and contain mineral elements for effective growth of plants.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1A shows the moon facing the earth;

(2) FIG. 1B is a sectional drawing showing the moon's soil-layers;

(3) FIG. 1C is a sectional drawing showing part of the moon's soil-layers;

(4) FIG. 2 is an illustrative drawing showing the spectra of the lunar lights;

(5) FIG. 3 is a bunch of trial data of the plant growth by the artificial lunar lights;

(6) FIG. 4 shows the LED semiconductor's light emitting system;

(7) FIG. 5 is a typical drawing showing the lunar light-emitting system of the moon consisting of the lunar soil layer;

(8) FIG. 6 compares the light-emitting system shown in FIG. 4 and the light-emitting system shown in FIG. 5;

(9) FIG. 7 exemplifies the light spectra;

(10) FIG. 8 shows a formula showing the response to the composition and disintegration of Oxin (IAA);

(11) FIG. 9 shows the radiant artificial lunar light system shown in the Embodiment 1 of the present invention in which the lunar light-emitting system is shown;

(12) FIG. 10 shows the radiant artificial lunar light system shown in Embodiment 2 of the present invention in which the lunar light-emitting system is shown;

(13) FIG. 11 illustrates the radiant artificial lunar light system shown in Embodiment 3 of the present invention;

(14) FIG. 12 compares the length of leaves grown by the artificial lunar lights of the present invention;

(15) FIG. 13 compares joint-by-joint growth of plants by means of the artificial lunar lights of the present invention;

(16) FIG. 14 compares the number of the plant leaves grown by means of the artificial lunar lights of the present invention;

(17) FIG. 15 compares the number of the plant roots grown by means of the artificial lunar lights of the present invention; and

(18) FIG. 16 compares the weight of the plants grown by means of the artificial lunar lights of the present invention.

DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

(19) Examples of the embodiments of the present invention are explained in detail by the above-referenced figures, as follows.

Embodiment 1

(20) FIG. 9 is an illustrative drawing showing the radiant artificial lunar light system in Embodiment 1 of the present invention.

(21) The radiant artificial lunar light system (10) is shown to have the photon energy and the main function of brightness. The artificial light-emitting system (10) contains the photon energy core (10A), which contains the photon device modules (10a) of high energy-emitting plural PN bond-type semiconductor light-emitting device (D1) and luminous intensity core (10B), which contains photon device modules (10b) of the plural PN bond-type semiconductor light-emitting device (D2) emitting lights of certain luminous intensity. The intensity (eV) and brightness (lx) of the radiant artificial lunar light system are set according to the lunar calendar dates by the lunar lights emitted from the oceanic and highland regions of the moon. For this a microcomputer (10C) is provided with a program that automatically controls the said lunar lights. The microcomputer is equipped with a display panel (10f) showing the strength (ev) of the photon energy of the artificial lunar lights and their luminous intensity (lx). The radiant artificial lunar light system (10) also contains an LED sensor (10s) for operational observation.

(22) When the radiant artificial lunar light system is supplied with electricity, i.e. powered, the photon energy core (10A) emits lights, that is high-density energy and wavelength of the artificial lunar lights, by the plural PN bond-type semiconductor light-emitting device (D1) and the strength of the photon energy is shown on the display panel (10f) provided in the microcomputer. The display panel (10f) of the channel (B) is provided with an energy strength scale of 0-100 eV.

(23) And the luminous intensity core (10B) emits the brightness-centered artificial lunar lights of low brightness-intensity by photon device modules (10b) of the PN bond-type semiconductor light-emitting device (D2). This brightness-intensity of the artificial lunar lights is shown on the display panel (10f) of the microcomputer (10C). On the display panel 10(f) of the channel (B) is shown the brightness-intensity scale of 0-100 lx.

(24) As noted above, the radiant artificial lunar light system (10) emits the high-intensity photon energy by the photon device modules (10a) of the PN bond-type semiconductor light-emitting device (D1); and by the photon device modules (10b) of the PN bond-type semiconductor light-emitting device (D2), the luminous intensity core (10B) emits the low energy-intensity and brightness-centered lights, and the program inputted in the microcomputer (10C) automatically controls the strength and brightness of the artificial lunar lights corresponding to the equivalent level of the moon lights emitted from the oceanic and highland regions of the moon, so that the artificial lunar lights similar in nature to the ingredients (spectra) of the moon lights can be made available.

(25) Therefore, in case where various kinds of crops are grown in an enclosed area such as in a room, the radiant artificial lunar light stem (10) may be used to emit the artificial lunar lights to the crops at dark nights without sunlight to further promote their growth.

Embodiment 2

(26) FIG. 10 illustrates the radiant artificial lunar light system shown in Embodiment 2. The radiant artificial lunar light system (20) is shown with the function of supplying valid mineral elements for the growth of plants. In other words, Si, Ti, Al, Fe, Mg, Ca, Na, K, P, Mn, Cr, etc., which are the important mineral materials in the oceanic region of the moon and which are also widely distributed on the earth. These mineral materials each consists of photon device module (20a) of the plural PN semiconductor light-emitting structure (D3) doped with a doner, and contains the microcomputer (20C) provided with a program to control the radiant artificial lunar light system (20).

(27) The microcomputer (20C) is provided with a selective panel (20f) to designate via a keyboard or directly manually such mineral elements as Si, Ti, Al, Fe, Mg, Ca, Na, K, P, Mn, Cr, and according to the direction of the program inputted in the microcomputer (20C), the strength of the lunar lights is automatically controlled, as well as the input and output of data, and the automatic/manual Wi/Fi means can be operated, and is also equipped with an operation display window (20w).

(28) If the artificial lunar light-emitting system is powered by electricity, the PN bond-type semiconductors' light-emitting device (D3) emits lights, resulting in the radiant artificial lunar light system emitting artificial lunar lights.

(29) At this time, because the light-emitting device of the PN bond-type semiconductors' light-emitting device (D3), with each of such mineral elements as Si, Ti, Al, Fe, Mg, Ca, Na, K, P, Mn, Cr. etc. being doped with a doner, the artificial lunar lights emitted from the PN bond-type semiconductors contain the mineral elements and carried by the photon energy.

(30) Hence, the artificial lunar lights similar in quality to the lights emitted from the oceanic region of the moon are emitted. If the artificial lunar lights are emitted to the plants, since the artificial lunar lights are heatless and luminescent, they are not converted into radiant heat, but into quantity of matter of the mineral elements such as Si, Ti, Al, Fe, Mg, Ca, Na, K, P, Mn, Cr, etc. carried by the photon energy, thereby consumed by the plants, for the plants as the chrysanthemum to grow more effectively. This has been proven by the trial data.

(31) FIGS. 12-16 show the results of the trial data conducted with chrysanthemums, in a trial room of 25 degrees Centigrade, with daylight/nighttime of 16/8 hours, and cultivation period of 30 days. In this cultivation trial conducted with chrysanthemums, the artificial lunar lights emitted from the radiant artificial light system were emitted to the trial plants, and the comparative plants were emitted with fluorescent lamp lights. The results were that the plant height (cm) (FIG. 12), internode length (cm) (FIG. 13), the number of leaves (FIG. 14), number of roots (FIG. 15) were much better than the comparative plants. and their fresh weight (FIG. 16) was much better than the comparative plants. Thus the results of the trial plants were much better in terms of their growth efficiency.

(32) Moreover, if the selective button panel (20f) selectively designates an optional element out of the Si, Ti, Al, Fe, Mg, Ca, Na, K, P, Mn, and Cr, list, the PN bond-type light-emitting device of the artificial light-emitting system (20) of the selected and doped PN bond-type semiconductor light-emitting device (D3) selectively operates, and the state of the operation is shown on the operational display window (20w).

(33) For example, if the button panel (200 selects and designates the Mg button, the PN bond-type light-emitting device (D3) of the radiant artificial lunar light system (20) emits the PN bond-type semiconductors' light-emitting system, emitting the lights of the selected Mg element doped with a doner.

(34) Therefore, in the artificial lunar lights of the radiant artificial lunar light system (20) emits lights of Mg element contained in the form of photon energy. The artificial lunar lights containing the Mg element are heatless and luminescent, and therefore, if the artificial lunar lights are brought in contact with objects, the objects are not converted into heat, but into quantity of matter of the light source material (Mg).

(35) As well, if plural mineral elements are designated, PN bond-type semiconductors' light-emitting device containing plural mineral elements are emitted with the lights simultaneously, resulting in the plural mineral elements being supplied with lunar lights.

(36) Without doubt, the PN bond-type semiconductors' light-emitting device (D3), in which each of the above-noted mineral elements is doped, can form the photon device modules (20a), assembled with the PN bond-type light-emitting devices (D3), and can selectively emit lights, and in the case of certain crops being cultivated, can form the photon device module of a single doped mineral element by the PN bond-type semiconductors' light-emitting device (D3), for the exclusive use for the crop that has been selected in order to apply the best possible light for its growth.

(37) As noted above, because the radiant artificial lunar light system in Embodiment 2 can emit lunar lights selectively, the photon modules (20a) can be formed to contain lunar light-emitting devices (D3) applicable to each kind of crops selectively, and this is advantageous for application to the medical, pharmaceutical, microbiological, and various physics trials.

Embodiment 3

(38) FIG. 11 illustrates the radiant artificial lunar light system in Embodiment 3 of the present invention.

(39) The artificial lunar light-source system (30) is shown where the light-source system (30) emits certain lights that contain photon modules (30a), i.e. a collection of PN bond-type semiconductors' light-emitting devices (D4) designed in similar nature to the lunar lights emitted from the oceanic region (a) of the moon, as well as the photon device modules, i.e. a collection of photon device modules (30b), i.e. a collection of the PN bond-type semiconductors' light-emitting device (D5) designed in similar nature to the lunar lights emitted from the highland region (b) of the moon, and each of the photon device modules (30a) (30b) contains the operational sensor (30s).

(40) The PN bond-type semiconductors' light-emitting device (D4) has a designed scope of the wavelengths of approximately 300λ-700λ, and practically useful wavelengths were 430λ-670λ.

(41) As well, the scope of luminous intensity of the PN bond-type semiconductors' light-emitting device (D5) was approximately 220 lx-770 lx, and practically useful brightness was in the scope of 380-450 lx.

(42) The microcomputer (30C), which is the means to control the radiant artificial lunar light system (30), is provided with a wavelength/luminous intensity designation panel (30f).

(43) The wavelength/luminous intensity panel (30f) is provided with a scale of 300-750 nm for the scope of control and a scale of 200-650 lx for the scope of control for the luminous intensity.

(44) If the radiant artificial lunar light system (30) is supplied with electricity, i.e. powered and operation is instructed by the microcomputer (30C), which is the means to control it, lights are emitted by the radiant artificial lunar light system (30).

(45) Wavelengths (λ=nm) are designated by the Designation Panel (300 according to the spectra of the moon lights emitted from the oceanic region of the moon, and luminous intensity (lx) is designated according to the moon lights emitted from the highland region of the moon, and the PN bond-type semiconductors' photon device modules (30b) of the light-emitting device (D4) emit the artificial lunar lights of the designated brightness. And the photon device modules (30b), with designed luminous intensity, of the photon device (D5) of the PN bond-type semiconductors emit lights of the designated brightness. The two sets of lunar lights are synthesized to emit artificial lunar lights of similar nature to the moon lights emitted from the oceanic and highland regions of the moon.

(46) Undoubtedly, the wavelengths and luminous intensity of the artificial lunar lights are automatically controlled according to the instruction inputted in the program of the microcomputer (30C).

(47) If the luminous intensity of the artificial lunar lights emitted to the plants is as low as 200 lx or lower, the plants show little reaction, and if it is over 700 lx, the plants showed fatigue.

(48) The artificial lunar lights are heatless and luminescent, and if the artificial lunar lights are emitted to the plants by the radiant artificial lunar light system (30), plants can grow more effectively.

REFERENCE NUMBERS

(49) 10, 20, 30: artificial lunar light-emitting system 10A: photon energy core 10B: luminous intensity core 10a, 10b, 20a: photon device module 10C, 20C, 30C: microcomputer 10f: operation display panel 10s, 30s: operation observing sensor 20f: button panel 20w: operation display window 30f: wavelength/luminous intensity designation panel D1, D2, D3, D4, D5: PN bond-type semiconductor's light-emitting device