ELECTRON TRANSPORT LAYER FOR FLEXIBLE PEROVSKITE SOLAR CELL AND FLEXIBLE PEROVSKITE SOLAR CELL INCLUDING THE SAME
20170288159 · 2017-10-05
Inventors
- Min Jae KO (Seoul, KR)
- Jin JOO (Daegu, KR)
- Hae Jung SON (Seoul, KR)
- Jai Kyeong Kim (Seoul, KR)
- Doh-Kwon LEE (Seoul, KR)
- Inyoung JEONG (Seoul, KR)
Cpc classification
H10K30/151
ELECTRICITY
H10K30/211
ELECTRICITY
International classification
Abstract
Disclosed is an electron transport layer for a flexible perovskite solar cell. The electron transport layer includes transition metal-doped titanium dioxide particles. The titanium dioxide particles are densely packed in the electron transport layer. The electron transport layer is transparent. The use of the electron transport layer enables the fabrication of a flexible perovskite solar cell with high power conversion efficiency. Also disclosed is a flexible perovskite solar cell employing the electron transport layer.
Claims
1. A method for preparing an electron transport layer for a flexible perovskite solar cell, comprising (A) mixing a titanium precursor, a transition metal precursor, and an organic ligand to prepare transition metal-doped titanium dioxide particles and (B) irradiating the transition metal-doped titanium dioxide particles with UV.
2. The method according to claim 1, wherein, in step (A), the transition metal precursor is selected from the group consisting of scandium (III) triflate, yttrium borate, yttrium acetate hydrate, lanthanum nitrate, niobium ethoxide isopropoxide, niobium alkoxides, ammonium metavanadate, tantalum ethoxide, and mixtures thereof.
3. The method according to claim 1, wherein, in step (A), the transition metal precursor is used in an amount of 1 to 5 mol %, based on the total weight of the mixture of the titanium precursor, the transition metal precursor, and the organic ligand.
4. The method according to claim 1, wherein, in step (A), the titanium precursor and the organic ligand are mixed in a molar ratio of 1:2-5.
5. The method according to claim 1, wherein, in step (A), the mixture of the titanium precursor, the transition metal precursor, and the organic ligand is heated at 250 to 300° C. for 1 to 3 hours.
6. The method according to claim 1, wherein, in step (B), the transition metal-doped titanium dioxide particles are irradiated with UV for 40 to 120 minutes.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0032] These and/or other aspects and advantages of the invention will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
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DETAILED DESCRIPTION OF THE INVENTION
[0049] The present invention is directed to a transparent electron transport layer for a flexible perovskite solar cell in which titanium dioxide particles are densely packed and a flexible perovskite solar cell (PSC) with high power conversion efficiency employing the electron transport layer.
[0050] Particularly, the electron transport layer of the present invention can be sintered at a low temperature of 30 to 50° C. through UV treatment, unlike conventional electron transport layers that are sintered at high temperatures. The UV treatment allows dense packing of the titanium dioxide particles and makes the electron transport layer transparent. The use of the electron transport layer ensures high performance of the flexible perovskite solar cell (PSC) and allows the flexible perovskite solar cell to have advantageous characteristics in terms of short-circuit current density, open-circuit voltage, fill factor, and power conversion efficiency.
[0051] The present invention will now be described in more detail.
[0052] The present invention provides an electron transport layer for a flexible perovskite solar cell including transition metal-doped titanium dioxide particles treated with UV (for example, UV-Nb:TiO.sub.2).
[0053] The titanium dioxide particles have a diameter of 0.5 to 3 nm, preferably 1.5 to 3 nm. Outside this range, the transparency of the electron transport layer may be lowered.
[0054] The transition metal contributes to improvement of electrical conductivity and charge extraction without affecting the optical properties of the electron transport layer. Examples of suitable transition metals include Group 3 transition metals and/or Group 5 transition metals. Preferably, the transition metal is selected from the group consisting of scandium (Sc), yttrium (Y), lanthanum (La), niobium (Nb), vanadium (V), tantalum (Ta), and combinations thereof. If a metal other than the transition metal is used, an improvement in charge extraction is not expected and high performance of the electron transport layer cannot be ensured.
[0055] The transition metal precursor is used in an amount of 1 to 5 mol %, preferably 1 to 2 mol %, based on the total weight of the mixture of the transition metal and the titanium dioxide particles. If the content of the transition metal is less than the lower limit defined above, improvement of electrical conductivity and charge extraction cannot be expected. Meanwhile, if the content of the transition metal exceeds the upper limit defined above, low charge extraction may also be caused.
[0056] The UV treatment of the transition metal-doped titanium dioxide particles provides the following advantages. First, the UV treatment induces fusion of the titanium dioxide particles, allowing their dense packing. Second, the UV treatment enables the removal of an organic ligand that is necessary for the preparation of the titanium dioxide particles but causes deterioration of photovoltaic performance due to the presence of its long alkyl chain.
[0057] The present invention also provides a method for preparing an electron transport layer for a flexible perovskite solar cell.
[0058] The method includes (A) mixing a titanium precursor, a transition metal precursor, and an organic ligand to prepare transition metal-doped titanium dioxide particles and (B) irradiating the transition metal-doped titanium dioxide particles with UV.
[0059] First, in step (A), transition metal-doped titanium dioxide particles are prepared.
[0060] The transition metal-doped titanium dioxide particles are prepared by heating a titanium precursor, a transition metal precursor, and an organic ligand at 250 to 300° C., preferably 260 to 280° C., for 1 to 3 hours, preferably 1.5 to 2 hours. If the heating temperature and time are less than the respective lower limits defined above, desired effects cannot be obtained. Meanwhile, if the heating temperature and time exceed the respective upper limits defined above, a large amount of impurities is produced.
[0061] The titanium precursor is not limited to a particular kind but is preferably titanium isopropoxide.
[0062] The transition metal precursor is used in an amount of 1 to 5 mol %, preferably 1 to 2 mol %, based on the total weight of the mixture of the titanium precursor, the transition metal precursor, and the organic ligand. If the content of the transition metal is less than the lower limit defined above, improvement of electrical conductivity and charge extraction cannot be expected. Meanwhile, if the content of the transition metal exceeds the upper limit defined above, low charge extraction may also be caused.
[0063] The transition metal precursor is not particularly limited but is preferably selected from the group consisting of scandium (III) triflate, yttrium borate, yttrium acetate hydrate, lanthanum nitrate, niobium ethoxide isopropoxide, niobium alkoxides, ammonium metavanadate, tantalum ethoxide, and mixtures thereof. More preferred is niobium ethoxide isopropoxide.
[0064] The organic ligand is not particularly limited so long as it can cap and disperse titanium dioxide particles without aggregation. The organic ligand is preferably selected from the group consisting of oleic acid, oleylamine, linoleic acid, stearic acid, and mixtures thereof.
[0065] The titanium precursor and the organic ligand are mixed in a molar ratio of 1:2-5, preferably 1:2-3. If the ratio of the organic ligand to the titanium precursor is less than 2, titanium dioxide particles may aggregate, resulting in poor performance. Meanwhile, if the ratio of the organic ligand to the titanium precursor exceeds 5, the organic ligand may remain unremoved despite UV treatment, resulting in poor photovoltaic performance.
[0066] Next, in step (B), the transition metal-doped titanium dioxide particles are irradiated with UV.
[0067] The transition metal-doped titanium dioxide particles are irradiated with a UV lamp in the wavelength range of 200 to 400 nm for 40 to 120 minutes, preferably 50 to 70 minutes.
[0068] The present invention also provides a flexible perovskite solar cell including the electron transport layer.
[0069] The flexible perovskite solar cell of the present invention includes a substrate, the electron transport layer (e.g., UV-Nb:TiO.sub.2) disposed on the substrate, a perovskite layer disposed on the electron transport layer, and a hole transport layer disposed on the perovskite layer, and an electrode layer disposed on the hole transport layer.
[0070] The flexible perovskite solar cell has an open-circuit voltage (V.sub.oc) of 1.09 to 1.13 V, a short-circuit current density (J.sub.sc) of 22.0 to 23.0 mAcm.sup.−2, a fill factor (FF) of 0.75 to 0.80, and a power conversion efficiency (PCE) of 17 to 20%.
[0071] The substrate may be, for example, fluorine-doped tin oxide (FTO) glass, indium tin oxide (ITO) glass or indium tin oxide/polyethylene naphthalate (ITO/PEN). The ITO/PEN refers to a substrate in which ITO is bonded to PEN.
[0072] The following examples are provided to assist in further understanding of the invention. However, these examples are intended for illustrative purposes only. It will be evident to those skilled in the art that various modifications and changes can be made without departing from the scope and spirit of the invention and such modifications and changes are encompassed within the scope of the appended claims.
Example 1: Preparation of UV-Nb:TiO.SUB.2 .(Electron Transport Layer)
[0073] Preparation of Nb:TiO.sub.2 (Nb-Doped Titanium Dioxide Particles)
[0074] Nb-doped titanium dioxide particles were synthesized via a non-hydrolytic sol-gel reaction.
[0075] 88 mmol of oleic acid (OA, Sigma Aldrich, 93%) and niobium (V) ethoxide (Aldrich; 99.95%, 1 mol % and 2 mol %, based on the total weight of the mixture) were degassed in a three-neck flask under vacuum. 1 h later, 30 mmol of titanium (IV) isopropoxide (TTIP; Aldrich; 97%) was added to the flask. The mixture was vigorously stirred at 270° C. for 2 h. When the color of the mixture turned from transparent yellow to white, the mixture was again degassed with 99.99% argon gas, giving a precipitate (Nb:TiO.sub.2).
[0076] The precipitate was washed with excess ethanol and purified by centrifugation at 3000 rpm for 30 min.
[0077] Preparation of UV Treated UV-Nb:TiO.sub.2
[0078] The purified Nb:TiO.sub.2 was re-dispersed in hexane at a predetermined concentration. The Nb:TiO.sub.2 dispersion was dropped onto a TCO substrate (FTO glass or ITO/PEN) and immediately spin-coated at a rate of 5000 rpm. Thereafter, the Nb:TiO.sub.2-coated TCO substrate was irradiated with a UV lamp curing system (JHCI-051B, JECO) equipped with a 400 W mercury lamp (wavelength range 200-400 nm) to prepare UV-Nb:TiO.sub.2.
Comparative Example 1: Preparation of HT-TiO.SUB.2 .(Electron Transport Layer)
[0079] A titanium diisopropoxide bis(acetylacetonate) solution (75% in isopropanol, Aldrich) was spin-coated on a TCO substrate (FTO glass or ITO/PEN) and annealed at 500° C. for 30 min to prepare high temperature sintered HT-TiO.sub.2.
Comparative Example 2: Preparation of UV-TiO.SUB.2 .(Electron Transport Layer)
[0080] Preparation of TiO.sub.2
[0081] Undoped titanium dioxide particles were synthesized via a non-hydrolytic sol-gel reaction.
[0082] 88 mmol of oleic acid (OA, Sigma Aldrich, 93%) was degassed in a three-neck flask under vacuum. 1 h later, 30 mmol of titanium (IV) isopropoxide (TTIP; Aldrich; 97%) was added to the flask. The mixture was vigorously stirred at 270° C. for 2 h. When the color of the mixture turned from transparent yellow to white, the mixture was again degassed with 99.99% argon gas, giving a precipitate (TiO.sub.2).
[0083] The precipitate was washed with excess ethanol and purified by centrifugation at 3000 rpm for 30 min.
[0084] Preparation of UV Treated UV-TiO.sub.2
[0085] The purified TiO.sub.2 was re-dispersed in hexane at a predetermined concentration. The TiO.sub.2 dispersion was dropped onto a TCO substrate (FTO glass or ITO/PEN) and immediately spin-coated at a rate of 5000 rpm. Thereafter, the TiO.sub.2-coated TCO substrate was irradiated with a UV lamp curing system (JHCI-051B, JECO) equipped with a 400 W mercury lamp (wavelength range 200-400 nm) to prepare UV-TiO.sub.2.
Test Example 1: Comparison of Undoped TiO.SUB.2., Nb:TiO.SUB.2 .(Nb 1 Mol %), and Nb:TiO.SUB.2 .(Nb 2 Mol %)
[0086]
[0087] As shown in
[0088]
[0089] As shown in
[0090] As shown in
[0091] Moreover, the XRD patterns reveal that the Nb:TiO.sub.2 nanoparticles were successfully prepared without by-products, such as Nb.sub.2O.sub.5.
[0092]
[0093] As shown in
Test Example 2: Comparison of Examples 1 and Comparative Examples 1-2
[0094] The organic ligand capping the TiO.sub.2 nanoparticles was dispersed without aggregation (the inset of
[0095] The decomposition of the organic ligand was confirmed by attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR).
[0096]
[0097] As shown in
[0098] As shown in
[0099]
[0100] As shown in
[0101]
[0102] As shown in
[0103] To evaluate the blocking effect of the electron transport layer (ETL) against the FTO glass, cyclic voltammetry (CV) was performed. In an aqueous solution of Fe(CN).sub.6.sup.3−/4−, reversible redox reactions between Fe(CN).sub.6.sup.3− and Fe(CN).sub.6.sup.4− occur on the FTO surface. It was previously reported that when FTO glass is coated with an electron transport layer (ETL), the peak current density of CV decreases with increasing peak-to-peak separation (ΔE.sub.p) because the FTO surface is blocked by the electron transport layer (ETL).
[0104] As shown in
[0105] As shown in
[0106]
[0107] The surface roughness values of the HT-TiO.sub.2 and the UV-TiO.sub.2 were confirmed by AFM.
[0108] The HT-TiO.sub.2 had an irregular surface with slightly sparse valleys, appearing as pinholes, whereas the AFM image of the UV-TiO.sub.2 showed a uniform and dense surface. The root mean square (RMS) roughness of the ITO glass was 1.0 nm and the surface roughness increased to 4.5 nm when coated with HT-TiO.sub.2.
[0109] The surface roughness of the UV-TiO.sub.2 was 2.3 nm, indicating a more smooth and dense surface than the HT-TiO.sub.2. The high uniformity and surface of UV-TiO.sub.2 were confirmed by AFM measurements. From the fact that the UV treatment allows the UV-TiO.sub.2 to have a smooth and dense surface, the UV-Nb:TiO.sub.2 (Example 1) is also believed to have a smooth and dense surface.
[0110]
[0111] The absorption coefficient (α) of an indirect band gap semiconductor around the band edge is determined by αhν=A(hν−E.sub.g).sup.2, where A is a constant, hν is the photon energy, and E.sub.g is the optical band gap.
[0112] As shown in
[0113] This can be explained by the quantum size effect of the TiO.sub.2 nanoparticles originated from the diameter (≦3 nm) of the titanium dioxide nanoparticles. As a result, the high transparency of the UV-treated TiO.sub.2 electron transport layers (UV-TiO.sub.2 and UV-Nb:TiO.sub.2) is beneficial to the light absorption of the perovskite layer due to their high photocurrent. There was no beneficial effect of Nb doping on the optical properties.
[0114] To investigate the effect of Nb doping on electrical properties, 4-point probe measurements were conducted.
[0115] The electrical conductivity of the UV-Nb:TiO.sub.2 (1 mol % Nb) was 2.65×10.sup.−4 Scm.sup.−1, which was about 3-fold higher than that of the UV-TiO.sub.2 (0.95×10.sup.−4 Scm.sup.−1) due to the increased carrier density after Nb doping. The electrical conductivity of the UV-Nb:TiO.sub.2 (1 mol % Nb) was also high compared to that of the HT-TiO.sub.2 film (0.25×10.sup.−4 Scm.sup.−1).
[0116] These results are attributed to the 1-dimensional structure of the sol-gel derived TiO.sub.2 nanoparticles in the form of a highly transparent and highly packed film for more efficient charge transport.
[0117] Planar perovskite solar cells (PSCs) including the HT-TiO.sub.2 (Comparative Example 1), UV-TiO.sub.2 (Comparative Example 2), and UV-Nb:TiO.sub.2 (Example 1) electron transport layers were fabricated on FTO glass. The photovoltaic performance of the perovskite solar cells was investigated.
[0118]
[0119] The highly crystalline pinhole free CH.sub.3NH.sub.3PbI.sub.3 perovskite layers were prepared by addition of a Lewis base.
[0120]
[0121] In the perovskite solar cell (PSC) shown in
[0122] The optical parameter of the planar PSC including the HT-TiO.sub.2, UV-TiO.sub.2, and UV-Nb:TiO.sub.2 electron transport layers are shown in Table 1.
TABLE-US-00001 TABLE 1 Parameters J.sub.sc (mAcm.sup.−2) V.sub.oc (V) FF PCE (%) HT-TiO.sub.2 20.74 1.06 0.71 15.51 UV-TiO.sub.2 21.05 1.08 0.72 16.37 UV-Nb:TiO.sub.2 22.81 1.10 0.78 19.57
[0123] As shown in Table 1 and
[0124] As shown in
[0125]
[0126] As shown in
[0127] The improved conductivity of the UV-treated electron transport layer (ETL) was proposed to reduce the hysteresis behavior by the balanced electrons and hole transport rate. The performance and photostability of the perovskite solar cell (PSC) including the UV-Nb:TiO.sub.2 electron transport layer during actual operation were evaluated by measuring the steady-state photocurrent density of the perovskite solar cell (PSC).
[0128]
[0129] As shown in
[0130]
[0131] The Fermi level (E.sub.F) of each of the UV-TiO.sub.2 and the UV-Nb:TiO.sub.2 is obtained by subtracting the binding energy of secondary electron cut-off from the incident photon energy (21.2 eV). The E.sub.F values of the UV-TiO.sub.2 and UV-Nb:TiO.sub.2 are −4.06 eV and −4.13 eV, respectively.
[0132] As shown in
[0133]
[0134] As shown in
[0135] The steady-state photoluminescence (PL) spectra of the perovskite layers were measured and time-resolved photoluminescence (TRPL) decay was performed to investigate the doping effect on charge transfer at the electron transport layer/perovskite interface.
[0136] As shown in
[0137] Specifically, the photoluminescence (PL) density of the UV-TiO.sub.2/perovskite was lower than that of the HT-TiO.sub.2/perovskite (HT-TiO.sub.2/perov) and the PL density of the UV-Nb:TiO.sub.2/perovskite was lower than that of the UV-TiO.sub.2/perovskite. These results reveal that charge extraction from the perovskite is the most effective in the UV-Nb:TiO.sub.2 electron transport layer.
[0138] The PL lifetime was obtained by fitting the TR-PL spectra with a biexponential decay function (
[0139] Parameters for the glass/perovskite, HT-TiO.sub.2/perovskite, UV-TiO.sub.2/perovskite, and UV-Nb:TiO.sub.2/perovskite are shown in Table 2.
TABLE-US-00002 TABLE 2 Parameters a.sub.1 (%) τ.sub.1 (ns) a.sub.2 (%) τ.sub.2 (ns) τ.sub.avg Glass/perov 56.6 26.6 43.4 7.9 18.5 HT-TiO.sub.2/perov 56.1 16.0 43.9 2.5 10.1 UV-TiO.sub.2/perov 38.9 13.3 61.1 2.5 6.7 UV-Nb:TiO.sub.2/perov 37.6 12.6 62.4 1.8 5.8
[0140] As shown in Table 2 and
[0141] The average decay lifetime of the UV-Nb:TiO.sub.2/perovskite layer was 5.8 ns, which was faster than that of the UV-TiO.sub.2/perovskite layer, and decreased from 2.5 nm to 1.8 ns with increased amplitude.
[0142] Therefore, it was confirmed that a significant improvement in the sunlight performance of the UV-Nb:TiO.sub.2 electron transport layer compared to the UV-TiO.sub.2 due to the ultraviolet photoelectron spectroscopy (UPS) and steady-state photoluminescence (PL) characteristics is attributed to improved charge extraction by a synergistic effect between energy level transfer and increased electrical conductivity. These results emphasize the importance of doping in the organic electron transport layer (ETL), which is because of the energy level alignment with perovskite in the high performance perovskite solar cell (PSC).
[0143] The novel method of the present invention is suitable for the preparation of an efficient electron transport layer (ETL) and is applicable to the fabrication of a high performance flexible perovskite solar cell (PSC). The UV-Nb:TiO.sub.2 electron transport layer of the present invention is suitable for use in a flexible perovskite solar cell (PSC).
[0144]
[0145]
[0146] In the flexible perovskite solar cell (PSC) shown in
[0147] Photovoltaic parameters of the flexible perovskite solar cell after recovery from bending at different radii (r) are shown in Table 3.
TABLE-US-00003 TABLE 3 Parameters J.sub.sc (mAcm.sup.−2) V.sub.oc (V) FF PCE (%) r = ∞ 20.20 1.04 0.76 16.01 r = 10 mm 19.71 1.04 0.76 15.58 r = 7 mm 19.33 1.02 0.67 13.27 r = 4 mm 12.02 0.97 0.38 4.41
[0148] As shown in Table 3 and
[0149] The power conversion efficiency (PCE) values of the PSC after bending at r=10 mm, 7 mm, and 4 mm were 15.58%, 13.27%, and 4.41%, respectively. The weak reduction in efficiency at r=7 mm is attributed to the plastic deformation of the solar cell. As previously reported, the soft ITO was broken at r=4 mm.
[0150] As shown in
[0151] Therefore, the mechanical durability of the flexible perovskite solar cell (PSC) was demonstrated until 1000 cycles of bending at r=15 mm. All layers of the flexible perovskite solar cell (PSC) maintained their mechanical flexibility until r=15 mm.
[0152] In the present invention, the sol-gel derived TiO.sub.2 nanoparticles were treated with UV to photocatalytically decompose the organic ligand and induce the fusion of the nanoparticles, enabling the preparation of the TiO.sub.2 electron transport layer at low temperature. The TiO.sub.2 electron transport layer was used to fabricate the perovskite solar cell (PSC) with high performance.
[0153] The UV-Nb:TiO.sub.2 electron transport layer shows a higher transmittance and has a denser surface than the TiO.sub.2 film having undergone sintering at high temperature. Particularly, the Nb doping shows improved electrical conductivity and a downward shift of Fermi level, which is advantageous for charge extraction.
[0154] Specifically, the planar perovskite solar cell (PSC) employing the UV-Nb:TiO.sub.2 as an electron transport layer (ETL) showed high power conversion efficiencies (PCE) of 16.01% for a flexible ITO/PEN substrate and 19.57% for hard FTO glass.
[0155] —Fabrication of Perovskite Solar Cells—
[0156] Perovskite Layer
[0157] 1 mmol of PbI.sub.2 (99.9985%, Alfar Aesar), 1 mmol of CH.sub.3NH.sub.3I (Dyesol), and 1 mmol of dimethyl sulfoxide (DMSO, 99.9%, Aldrich) were added to 600 mg of N,N-dimethylformamide (DMF, 99.8%, Alfa Aesar) to prepare a perovskite solution. To the solution was added dropwise diethyl ether with two-stage rapid stirring. The mixture was slowly spin-coated on each of the electron transport layers prepared in Example 1 and Comparative Examples 1-2 at 1000 rpm and 4000 rpm for 20 sec. Thereafter, the coated electron transport layer was heated at 100° C. for 3 min to form a dark perovskite layer.
[0158] Hole Transport Layer
[0159] A mixture of 2,2′,7,7′-tetrakis(N,N-p-dimethoxyphenyl-amine)-9,9′-spirobifluorene (56 mg, spiro-OMeTAD, Merck), 4-tert-butylpyridine (30 mg, 96%, Aldrich), chlorobenzene (1 ml, 99.8%, Aldrich), and bis(trifluoromethane)sulfonimide lithium salt (6 mg, 99.95%, Aldrich) was coated on the perovskite layer at 2500 rpm for 20 s.
[0160] Electrode Layer
[0161] An 80 nm thick Au electrode was formed on the hole transport layer by shadow mask thermal evaporation.
[0162] —Instruments—
[0163] The morphologies of the TiO.sub.2 nanoparticles and the films were measured by field emission scanning electron microscopy (FESEM, Inspect F, FEI), high-resolution transmission electron microscopy (HR-TEM, Talos F200X, FEI), and atomic force microscopy (AFM, XE-100, Park Systems).
[0164] The crystal structure of the TiO.sub.2 nanoparticles was characterized using a powder X-ray diffractometer (XRD, D/MAX-2500, Rigaku) with Cu Kα radiation (wavelength 1.541 Å).
[0165] The compositions of the UV-treated TiO.sub.2 films were investigated using an ATR-FTIR spectrometer (Spectrum 100, PerkinElmer), and XPS and UPS measurements were conducted using a monochromator Al Kα (1486.6 eV) for XPS and a scanning XPS microprobe (PHI 5000 VersaProbe, Ulvac-PHI) with HeI (21.2 eV) for UPS, respectively.
[0166] For the measurement of electrical conductivity, a Keithley 2182A nanovoltmeter and a four-point probe connected to a Keithley 6220 precision current source were used. The optical properties of the TiO.sub.2 thin films was measured using a UV-vis spectrophotometer (Lambda 35, Perkin Elmer).
[0167] Electrochemical workstation (CHI600C, CH Instruments, Inc.) was used for cyclic voltammetry (CV) measurement. The cyclic voltammograms were recorded in a 3-electrode configuration using a Ag/AgCl reference electrode and a Pt wire counter electrode. The CV electrolyte was an aqueous solution containing 0.5 mM K.sub.4Fe(CN).sub.6, 0.5 mM K.sub.3Fe(CN).sub.6, and 0.5 M KCl.
[0168] The current density-voltage (J-V) curves were measured using a Keithley model 2400 source measurement unit and a solar simulator equipped with a 1000 W xenon lamp (Yamashida Denso, YSS-50S).
[0169] A Si solar cell calibrated by the National Renewable Energy Laboratory (NREL) was used to adjust the light intensity to the AM 1.5G 1 sun condition (100 mW cm.sup.−2). During all J-V measurements, non-reflective black masks were attached to the devices to exclude diffused light scattering.
[0170] The active area of each device (0.1-0.15 cm.sup.2) was measured using an optical microscope.
[0171] The incident photon-to-current conversion efficiency (IPCE) was measured using an IPCE measurement system (PV Measurement, Inc.). The steady-state photoluminescence (PL) spectra of perovskite films were obtained by excitation at 550 nm using a Fluorolog3 photoluminescence spectrometer system with a monochromator (iHR320, HORIBA Scientific).
[0172] Time-resolved photoluminescence (TR-PL) measurements were performed at the PL maxima of the CH.sub.3NH.sub.3PbI.sub.3 perovskite, using time-correlated single photon counting module (TCSPC, MPD-PDM Series DET-40 photon counting detector and Pendulum CNT-91 frequency counter) combined with a monochromator as the detector, and a second-harmonic generated 400 nm laser as the excitation source derived from 800 nm Ti: sapphire laser (Mai Tai, Spectra-Physics).