GENERAL FOUR-PORT ON-WAFER HIGH FREQUENCY DE-EMBEDDING METHOD

Abstract

The present invention provides a general four-port on-wafer high frequency de-embedding method. The method comprises: for each on-wafer de-embedding dummy, building a model considering the distributive nature of high frequency characteristics of the on-wafer de-embedding dummy; obtaining the intrinsic Y-parameter admittance matrix of said N on-wafer de-embedding dummies by calculation or simulation by using said models; and solving the equation set which the corresponding measurement and calculation or simulation data of said on-wafer de-embedding dummies satisfy for the elements of the related admittance matrices of the parasitic four-port network to be stripped in de-embedding and model parameters of models on which said calculation or simulation is based.

Claims

1. A general four-port on-wafer high frequency de-embedding method, comprising the following steps: 1.1: fabricating, together with a device under test (DUT) to be de-embedded, N on-wafer de-embedding dummies; 1.2: measuring to obtain the whole Y-parameter admittance matrix Y.sub.M of said DUT and the whole Y-parameter admittance matrix Y.sub.Mj (j=1,2, . . . , N) of each of said de-embedding dummies; 1.3: for each de-embedding dummy, building a model considering the distributive nature of high frequency characteristics of the de-embedding dummy; 1.4: obtaining the intrinsic Y-parameter admittance matrix Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M) (j=1,2, . . . , N) of said N de-embedding dummies by calculation or simulation by using said models, where, p.sub.1, p.sub.2, . . . , p.sub.M are M model parameters of models on which said calculation or simulation is based, and 4N−16≧M; 1.5: solving an equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei(Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)+Y.sub.ii).sup.−1Y.sub.ie (j=1,2, . . . , N) for the elements of four sub-matrices Y.sub.ee, Y.sub.ii, Y.sub.ei and Y.sub.ie of the admittance matrix Y of the parasitic four-port network to be stripped in de-embedding and said model parameters p.sub.1, p.sub.2, . . . , p.sub.M as unknowns, wherein, as shown in the following equation, Y.sub.ee, Y.sub.ii, Y.sub.ei and Y.sub.ie as four sub-matrices, form an admittance matrix Y of said parasitic four-port network: $Y = [\begin{matrix} Y_{ee} & Y_{ei} \\ Y_{ie} & Y_{ii} \end{matrix}];$ and 1.6: substituting Y.sub.ee, Y.sub.ii, Y.sub.ei and Y.sub.ie obtained in Step 1.5 and the whole Y-parameter admittance matrix Y.sub.M of said DUT obtained by measurement in Step 1.2 into Equation Y.sub.A=Y.sub.ii−Y.sub.ie(Y.sub.M−Y.sub.ee).sup.−1Y.sub.ei, to obtain by calculation the intrinsic Y-parameter admittance matrix Y.sub.A of said DUT.

2. The general four-port on-wafer high frequency de-embedding method according to claim 1, characterized in that solving the equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei(Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)+Y.sub.ii).sup.−1Y.sub.ie(j=1,2, . . . , N) for the elements of four sub-matrixes Y.sub.ee, Y.sub.ii, Y.sub.ei and Y.sub.ie of the admittance matrix Y of the parasitic four-port network to be stripped in de-embedding and said model parameters p.sub.1, p.sub.2, . . . , p.sub.M as unknowns in Step 1.5 comprises the following steps: 2.1: assigning initial values to said model parameters p.sub.1, p.sub.2, . . . p.sub.M, respectively; 2.2: obtaining the values of Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)(j=1,2, . . . , N) by calculation or simulation by using the assigned model parameters p.sub.1, p.sub.2, . . . p.sub.M; 2.3: after solving an equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei(Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)+Y.sub.ii).sup.−1 Y.sub.ie (j=1,2,3,4) by using the known measurement values Y.sub.Mj(j=1,2,3,4) of the first four de-embedding dummies and said calculated or simulated values Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)(j=1,2,3,4) to obtain the values of Y.sub.ee, Y.sub.ii, Y.sub.ei and Y.sub.ie, substituting the known measurement values Y.sub.Mj(j=5,6, . . . , N) of the remaining de-embedding dummies and said obtained values of Y.sub.ee, Y.sub.ii, Y.sub.ei and Y.sub.ie into Y.sub.Dj=−Y.sub.ii−Y.sub.ie (Y.sub.Mj−Y.sub.ee).sup.−1Y.sub.ei (j=5,6, . . . , N) to obtain by calculation the de-embedded Y-parameter admittance matrix Y.sub.Dj(j=5,6, . . . , N) of said remaining de-embedding dummies; 2.4: comparing the calculated Y.sub.Dj(j=5,6, . . . , N) with the calculated or simulated values Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)(j=5,6, . . . , N) of the corresponding remaining de-embedding dummies already obtained in Step 2.1, determining final values for undetermined model parameters p.sub.1, p.sub.2, . . . p.sub.M which are necessary for the calculation or simulation of the de-embedding dummies, if a difference between the two meets the set error standard, and correcting the values of the model parameters p.sub.1, p.sub.2, . . . p.sub.M and reassigning them, and then turning back to Step 2.2, if the difference between the two does not meet the set error standard.

3. A general four-port on-wafer high frequency de-embedding method of passivity, reciprocity and symmetry, comprising the following steps: 3.1: fabricating, together with a device under test (DUT) to be de-embedded, N de-embedding dummies of passivity, reciprocity and symmetry; 3.2: measuring to obtain the whole Y-parameter admittance matrix Y.sub.M of said DUT and the whole Y-parameter admittance matrix Y.sub.Mj (j=1,2, . . . , N) of each of said de-embedding dummies; 3.3: for each de-embedding dummy, building a model considering the distributive nature of high frequency characteristics of the de-embedding dummy; 3.4: obtaining the intrinsic Y-parameter admittance matrices Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)(j=1,2, . . . , N) of said N de-embedding dummies by calculation or simulation by using said models, where, p.sub.1, p.sub.2, . . . , p.sub.M are M model parameters of models on which said calculation or simulation is based, and 2N−6≧M; 3.5: solving an equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei (Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)+Y.sub.ii).sup.−1 Y.sub.ei(j=1,2, . . . , N) for the elements of three sub-matrices Y.sub.ee, Y.sub.ii and Y.sub.ei of the admittance matrix Y of the parasitic four-port network to be stripped in de-embedding and said model parameters p.sub.1, p.sub.2, . . . , p.sub.M as unknowns, wherein, as shown in the following equation, Y.sub.ee, Y.sub.ii and Y.sub.ei, as three sub-matrices, form the admittance matrix Y of said parasitic four-port network: $Y = [\begin{matrix} Y_{ee} & Y_{ei} \\ Y_{ie} & Y_{ii} \end{matrix}];$ and 3.6: substituting Y.sub.ee, Y.sub.ii and Y.sub.ei obtained in Step 3.5 and the whole Y-parameter admittance matrix Y.sub.M of said DUT obtained by measurement in Step 3.2 into Equation Y.sub.A=−Y.sub.ii−Y.sub.ei(Y.sub.M−Y.sub.ee).sup.−1Y.sub.ei, to obtain by calculation the intrinsic Y-parameter admittance matrix Y.sub.A of said DUT.

4. The special general four-port on-wafer high frequency de-embedding method according to claim 3, characterized in that solving the equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei(Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)+Y.sub.ii).sup.−1Y.sub.ei(j=1,2, . . . , N for the elements of three sub-matrices Y.sub.ee, Y.sub.ii and Y.sub.ei of the admittance matrix Y of the parasitic four-port network to be stripped in de-embedding and said model parameters p.sub.1, p.sub.2, . . . , p.sub.M as unknowns in Step 3.5 comprises the following steps: 4.1: assigning initial values to said model parameters p.sub.1, p.sub.2, . . . p.sub.M, respectively; 4.2: obtaining the values of Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)(j=1,2, . . . , N) by calculation or simulation by using the assigned model parameters p.sub.1, p.sub.2, . . . p.sub.M; 4.3: after solving an equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei(Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)+Y.sub.ii).sup.−1 Y.sub.ei(j=1,2,3) by using the known measurement values Y.sub.Mj(j=1,2,3) of first three de-embedding dummies and said calculated or simulated values Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M) (j=1,2,3) to obtain the values of Y.sub.ee, Y.sub.ii and Y.sub.ei (it is unnecessary to completely solve Y.sub.ei, referring to claim 5.4), substituting the known measurement values Y.sub.Mj (j=4,5, . . . , N) of the remaining de-embedding dummies and said obtained values of Y.sub.ee, Y.sub.ii and Y.sub.ei into Y.sub.Dj=−Y.sub.ii−Y.sub.ei(Y.sub.Mj−Y.sub.ee).sup.−1Y.sub.ei (j=4,5, . . . , N) to obtain by calculation the de-embedded Y-parameter admittance matrices Y.sub.Dj(j=4,5, . . . , N) of said remaining de-embedding dummies; 4.4: comparing the calculated Y.sub.Dj(j=4,5, . . . , N) with the calculated or simulated values Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)(j=4,5, . . . , N) of the corresponding remaining de-embedding dummies already obtained in Step 4.1, determining final values for undetermined model parameters p.sub.1, p.sub.2, . . . p.sub.M which are necessary for the calculation or simulation of the de-embedding dummies, if a difference between the two meets the set error standard, and correcting the values of the model parameters p.sub.1, p.sub.2, . . . p.sub.M and reassigning them, and then turning back to Step 4.2, if the difference between the two does not meet the set error standard.

5. The special general four-port on-wafer high frequency de-embedding method according to claim 4, characterized in that solving the equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei(Y.sub.Aj(p.sub.1, p.sub.2, . . . p.sub.M)+Y.sub.ii).sup.−1Y.sub.ei (j=1,2,3) to further obtain by calculation the de-embedded Y-parameter admittance matrices Y.sub.Dj(j=4,5, . . . , N) of said remaining de-embedding dummies in Step 4.3 comprises the following steps: 5.1: obtaining by calculation matrices Z.sub.2A=(Y.sub.A2−Y.sub.A1).sup.−1, Z.sub.2M=(Y.sub.M2−Y.sub.M1).sup.−1, Z.sub.3A=(Y.sub.A3−Y.sub.A1).sup.−1 and Z.sub.3M=(Y.sub.M3−Y.sub.M1).sup.−1, where exponent −1 represents matrix inversion; 5.2: calculating quantities $r_{2 .Math. p} = \frac{z_{2 .Math. A .Math. .Math. 11} + z_{2 .Math. A .Math. .Math. 12}}{z_{2 .Math. M .Math. .Math. 11} + z_{2 .Math. M .Math. .Math. 12}}, r_{3 .Math. p} = \frac{z_{3 .Math. A .Math. .Math. 11} + z_{3 .Math. A .Math. .Math. 12}}{z_{3 .Math. M .Math. .Math. 11} + z_{3 .Math. .Math. M .Math. .Math. 12}}, r_{2 .Math. m} = \frac{z_{2 .Math. A .Math. .Math. 11} - z_{2 .Math. A .Math. .Math. 12}}{z_{2 .Math. M .Math. .Math. 11} - z_{2 .Math. M .Math. .Math. 12}}, .Math. r_{3 .Math. m} = \frac{z_{3 .Math. A .Math. .Math. 11} - z_{3 .Math. A .Math. .Math. 12}}{z_{3 .Math. M .Math. .Math. 11} - z_{3 .Math. M .Math. .Math. 12}}, .Math. y_{p} = \frac{r_{3 .Math. p} (y_{A .Math. .Math. 311} + y_{A .Math. .Math. 312}) - r_{2 .Math. p} (y_{A .Math. .Math. 211} + y_{A .Math. .Math. 212})}{r_{2 .Math. p} - r_{3 .Math. p}}, .Math. y_{m} = \frac{r_{3 .Math. m} (y_{A .Math. .Math. 311} - y_{A .Math. .Math. 312}) - r_{2 .Math. m} (y_{A .Math. .Math. 211} - y_{A .Math. .Math. 212})}{r_{2 .Math. m} - r_{3 .Math. m}}, .Math. x_{p} = r_{2 .Math. p} (y_{p} + y_{A .Math. .Math. 111} + y_{A .Math. .Math. 112}) .Math. (y_{p} + y_{A .Math. .Math. 211} + y_{A .Math. .Math. 212}) .Math. .Math. and$ $x_{m} = r_{2 .Math. m} (y_{m} + y_{A .Math. .Math. 111} - y_{A .Math. .Math. 112}) .Math. (y_{m} + y_{A .Math. .Math. 211} - y_{A .Math. .Math. 212}),$ where z.sub.2A11 and z.sub.2A12 are respectively z.sub.11 and z.sub.12 of Z.sub.2A; z.sub.2M11 and z.sub.2M12 are respectively z.sub.11 and z.sub.12 of Z.sub.2M; z.sub.3A11 and z.sub.3A12 are respectively z.sub.11 and z.sub.12 of Z.sub.3A; z.sub.3M11 and z.sub.3M12 are respectively z.sub.11 and z.sub.12 of Z.sub.3M; y.sub.A111 and y.sub.A112 are respectively y.sub.11 and y.sub.12 of Y.sub.A1; y.sub.A211 and y.sub.A212 are respectively y.sub.11 and y.sub.12 of Y.sub.A2; y.sub.A311 and y.sub.A312 are respectively y.sub.11 and y.sub.12 of Y.sub.A3; 5.3: calculating quantities $y_{ii .Math. .Math. 11} = \frac{y_{p} + y_{m}}{2} .Math. .Math. and .Math. .Math. y_{ii .Math. .Math. 12} = \frac{y_{p} - y_{m}}{2}$ to obtain a matrix $Y_{ii} = [\begin{matrix} y_{ii .Math. .Math. 11} & y_{ii .Math. .Math. 12} \\ y_{ii .Math. .Math. 12} & y_{ii .Math. .Math. 11} \end{matrix}];$ 5.4: obtaining by calculation the square of elements y.sub.11 and y.sub.12 of the matrix $Y_{ei} .Math. : .Math. .Math. y_{ei .Math. .Math. 11}^{2} = \frac{x_{p} + x_{m} \pm 2 .Math. \sqrt{x_{p} .Math. x_{m}}}{4} .Math. .Math. and .Math. .Math. y_{ei .Math. .Math. 12}^{2} = \frac{x_{p} + x_{m} \mp 2 .Math. \sqrt{x_{p} .Math. x_{m}}}{4},$ where the plus-minus sign is selected such that, at the low frequency limit, y.sub.ei11.sup.2 tends to infinity and y.sub.ei12.sup.2 tends to zero, and both y.sub.ei11.sup.2 and y.sub.ei12.sup.2 continuously vary with frequency; 5.5: obtaining by calculation a matrix Z.sub.Ai=(Y.sub.A1+Y.sub.ii).sup.−1; 5.6: calculating quantities $y_{Ai .Math. .Math. 11} = z_{Ai .Math. .Math. 11} .Math. \frac{x_{p} + x_{m}}{2} + z_{Ai .Math. .Math. 12} .Math. \frac{x_{p} - x_{m}}{2} .Math. .Math. and$ $y_{Ai .Math. .Math. 12} = z_{Ai .Math. .Math. 12} .Math. \frac{x_{p} + x_{m}}{2} + z_{Ai .Math. .Math. 11} .Math. \frac{x_{p} - x_{m}}{2}$ to obtain a matrix $Y_{Ai} = [\begin{matrix} y_{Ai .Math. .Math. 11} & y_{Ai .Math. .Math. 12} \\ y_{Ai .Math. .Math. 12} & y_{Ai .Math. .Math. 11} \end{matrix}],$ where z.sub.Ai11 and z.sub.Ai12 are respectively z.sub.11 and z.sub.12 of Z.sub.Ai; 5.7: obtaining by calculation a matrix Y.sub.ee=−Y.sub.M1−Y.sub.Ai; 5.8: obtaining by calculation a matrix Z.sub.Mej=(Y.sub.ee−Y.sub.Mj).sup.−1(j=4,5, . . . , N); 5.9: calculating quantities $y_{Mej .Math. .Math. 11} = z_{Mej .Math. .Math. 11} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Mej .Math. .Math. 12} + z_{Mej .Math. .Math. 21}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Mej .Math. .Math. 22} .Math. y_{ei .Math. .Math. 12}^{2} (j = 4, 5, .Math. .Math., N), .Math. y_{Mej .Math. .Math. 12} = z_{Mej .Math. .Math. 12} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Mej .Math. .Math. 11} + z_{Mej .Math. .Math. 22}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Mej .Math. .Math. 21} .Math. y_{ei .Math. .Math. 12}^{2} (j = 4, 5, .Math. .Math., N), .Math. y_{Mej .Math. .Math. 21} = z_{Mej .Math. .Math. 21} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Mej .Math. .Math. 11} + z_{Mej .Math. .Math. 22}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Mej .Math. .Math. 12} .Math. y_{ei .Math. .Math. 12}^{2} (j = 4, 5, .Math. .Math., N) .Math. .Math. and$ $y_{Mej .Math. .Math. 22} = z_{Mej .Math. .Math. 22} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Mej .Math. .Math. 12} + z_{Mej .Math. .Math. 21}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Mej .Math. .Math. 11} .Math. y_{ei .Math. .Math. 12}^{2} (j = 4, 5, .Math. .Math., N)$ to obtain a matrix $Y_{Mej} = [\begin{matrix} y_{Mej .Math. .Math. 11} & y_{Mej .Math. .Math. 12} \\ y_{Mej .Math. .Math. 21} & y_{Mej .Math. .Math. 22} \end{matrix}] .Math. .Math. (j = 4, 5, .Math. .Math., N),$ where z.sub.Mej11, z.sub.Mej12, z.sub.Mej21 and z.sub.Mej22 are respectively z.sub.11, z.sub.12, z.sub.21 and z.sub.22 of Z.sub.Mej; and 5.10: obtaining by calculation the de-embedded Y-parameter matrices) Y.sub.Di=Y.sub.Mej−Y.sub.ii (j=4,5, . . . , N) of said remaining de-embedding dummies.

6. The special general four-port on-wafer high frequency de-embedding method according to claim 3, characterized in that calculating the intrinsic Y-parameter admittance matrix Y.sub.A of said DUT by using the whole Y-parameter admittance matrix Y.sub.M of said DUT obtained by measurement in Step 3.6 comprises the following steps: 6.1: obtaining by calculation a matrix Z.sub.Me=(Y.sub.ee−Y.sub.M).sup.−1; 6.2: calculating quantities $y_{Me .Math. .Math. 11} = z_{Me .Math. .Math. 11} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 12} + z_{Me .Math. .Math. 21}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 22} .Math. y_{ei .Math. .Math. 12}^{2}, .Math. y_{Me .Math. .Math. 12} = z_{Me .Math. .Math. 12} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 11} + z_{Me .Math. .Math. 22}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 21} .Math. y_{ei .Math. .Math. 12}^{2}, .Math. y_{Me .Math. .Math. 21} = z_{Me .Math. .Math. 21} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 11} + z_{Me .Math. .Math. 22}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 12} .Math. Y_{ei .Math. .Math. 12}^{2} .Math. .Math. and$ $y_{Me .Math. .Math. 22} = z_{Me .Math. .Math. 22} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 12} + z_{Me .Math. .Math. 21}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 11} .Math. y_{ei .Math. .Math. 12}^{2}$ to obtain a matrix $Y_{Me} = [\begin{matrix} y_{Me .Math. .Math. 11} & y_{Me .Math. .Math. 12} \\ y_{Me .Math. .Math. 21} & y_{Me .Math. .Math. 22} \end{matrix}],$ where z.sub.Me11, z.sub.Me12, z.sub.Me21 and z.sub.Me22 are respectively z.sub.11, z.sub.12, z.sub.21 and z.sub.22 of Z.sub.Me; and 6.3: obtaining by calculation the intrinsic Y-parameter admittance matrix Y.sub.A=Y.sub.Me−Y.sub.ii of the DUT to be de-embedded.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0054] FIG. 1 is a schematic view of an on-wafer high frequency characterization measurement set-up;

[0055] FIG. 2 is a schematic view of a general parasitic four-port network for an on-wafer high frequency characterization measurement;

[0056] FIG. 3 shows the equivalent circuits of five on-wafer de-embedding two-port dummies generally used in the prior art of the general four-port on-wafer high frequency de-embedding method: Open O (a), Short S (b), Left L (c), Right R (d) and Thru T (e);

[0057] FIG. 4 is a schematic view of a strip-line Thru (T) on-wafer de-embedding dummy in Implementation 1;

[0058] FIG. 5 is a schematic view of an Open (O) on-wafer de-embedding dummy in Implementation 1;

[0059] FIG. 6 is a schematic view of a Short (S) on-wafer de-embedding dummy in Implementation 1;

[0060] FIG. 7 is a schematic view of a Left (L) on-wafer de-embedding dummy in Implementation 1;

[0061] FIG. 8 is a schematic view of a Right (R) on-wafer de-embedding dummy in Implementation 1;

[0062] FIG. 9 is a schematic view of a Thru 1 (T1) on-wafer de-embedding dummy in Implementation 2;

[0063] FIG. 10 is a schematic view of a Thru 2 (T2) on-wafer de-embedding dummy in Implementation 2;

[0064] FIG. 11 is a schematic view of a Thru 3 (T3) on-wafer de-embedding dummy in Implementation 2; and

[0065] FIG. 12 is a schematic view of a Thru 4 (T4) on-wafer de-embedding dummy in Implementation 2.

DETAILED DESCRIPTION OF THE PRESENT INVENTION

[0066] Implementation 1: one implementation of a general four-port on-wafer high frequency de-embedding method for a case in which parasitics to be stripped form a general parasitic four-port network

[0067] (1) Five on-wafer de-embedding dummies are designed and fabricated together with a device under test (DUT) to be de-embedded, i.e., five on-wafer de-embedding two-port dummies generally adopted in the prior art of the general four-port on-wafer high frequency de-embedding method, including: Open (O), Short (S), Left (L), Right (R) and strip-line Thru (T). However, no assumption is made on the form of their equivalent circuits as in FIG. 3. Instead, they are all considered as a general two-port network. Their schematic structural diagrams are respectively as shown in FIGS. 4, 5, 6, 7 and 8, wherein a lower grounded metal, an intermediate signal wire metal, and an upper grounded metal of the strip-line Thru T are respectively made of three layers of metal in the multi-layer metal interconnection process of a semiconductor integrated circuit, and a dielectric layer is filled between the lower grounded metal and the upper grounded metal and surrounds said signal wire metal; the signal wire is removed from the strip-line Thru T dummy to obtain an Open dummy O; the input and output ports of the Open dummy O are connected to the lower grounded metal and the upper grounded metal, respectively, by a via/metal stack, to obtain a Short dummy S; the input port of the Open dummy O is connected to the lower grounded metal and the upper grounded metal by a via/metal stack to obtain a Left dummy L; the output port of the Open structure O is connected to the lower grounded metal and the upper grounded metal by a via/metal stack to obtain a Right dummy L.

[0068] (2) By an on-wafer high frequency measurement instruments and techniques, the whole Y-parameter admittance matrix Y.sub.M of said DUT and the whole Y-parameter admittance matrices, which are respectively denoted by Y.sub.MO, Y.sub.MS, Y.sub.ML, Y.sub.MR and Y.sub.MT, of said five on-wafer de-embedding dummies are obtained by measurement.

[0069] (3) In the premise of giving consideration to the distributive nature of high frequency characteristics of said on-wafer de-embedding dummies, models for said Open (O), Short (S), Left (L), Right (R) and Thru (T) are built in a passive electromagnetic field simulation software environment, respectively, according to structures as shown in FIGS. 4, 5, 6, 7 and 8, and electromagnetic field simulation is performed by said passive electromagnetic field simulation software on the basis of the built models to obtain intrinsic Y-parameter admittance matrices of said five on-wafer de-embedding dummies, which are respectively denoted by Y.sub.AO (σ, ∈.sub.r), Y.sub.AS (σ, ∈.sub.r), Y.sub.AL (σ, ∈.sub.r), Y.sub.AR(σ, ∈.sub.r) and Y.sub.AT (σ, ∈.sub.r), where, σ and ∈.sub.r, as model parameters of models on which said simulation is based, are respectively the conductivity of metals in said high frequency on-wafer de-embedding dummies and the relative dielectric constant of the dielectric layer material filled among the metals.

[0070] (4) An equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei (Y.sub.Aj(σ, ∈.sub.r)+Y.sub.ii).sup.−1Y.sub.ie (j=O,S,L,R,T) is solved for the elements of the related admittance matrixes Y.sub.ee, Y.sub.ii, Y.sub.ei and Y.sub.ie of the parasitic four-port network to be stripped in de-embedding and said model parameters σ and ∈.sub.r as unknowns. Specifically, the following steps are included:

[0071] (4-1) on the basis that initial default values are taken for the model parameters σ and ∈.sub.r respectively, obtaining the values of Y.sub.Aj(σ, ∈.sub.r)(j=O, S, L, R, T) by passive electromagnetic field simulation;

[0072] (4-2) after solving an equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei(Y.sub.Aj(σ, ∈.sub.r)+Y.sub.ii).sup.−1Y.sub.ie (j=O, S, L, R) by using the known measurement values Y.sub.Mj (j=O, S, L, R) of the first four on-wafer de-embedding dummies and said simulated values Y.sub.Aj(σ,∈.sub.r)(j=O,S, L, R) to obtain the values of Y.sub.ee, Y.sub.ii, Y.sub.ei and Y.sub.ie, substituting the known measurement values Y.sub.MT of the strip-line Thru T and said obtained values of Y.sub.ee, Y.sub.ii, Y.sub.ei and Y.sub.ie into Y.sub.DT=−Y.sub.ii−Y.sub.ie(Y.sub.MT−Y.sub.ee).sup.−1Y.sub.ei to obtain by calculation the de-embedded Y-parameter admittance matrix Y.sub.DT of the strip-line Thru T;

[0073] (4-3) comparing the calculated Y.sub.DT with the simulated value Y.sub.AT(σ, ∈.sub.r) of the strip-line Thru T already obtained in Step (4-1), properly correcting the values of the model parameters σ and ∈.sub.r and then turning back to Step (4-1) if the difference between the two does not meet the set error standard, and obtaining the values of Y.sub.Aj(σ,∈.sub.r)(j=O, S, L, R, T) again by passive electromagnetic field simulation by using the corrected model parameters; and

[0074] (4-4) once turning back to Step (4-1), starting a cyclic iterative fitting process from Step (4-1) to Step (4-3), performing iterative optimization fitting by optimization algorithms such as inverse modeling, and continuously correcting the values of the model parameters σ and ∈.sub.r used for simulation of intrinsic Y-parameter admittance matrices of the on-wafer de-embedding dummies until a difference between the de-embedded Y-parameter admittance matrix Y.sub.DT of the strip-line Thru T and the corresponding simulated value Y.sub.AT (σ, ∈.sub.r) meets a set error standard, that is, determining the final values for the undetermined mode parameters σ and ∈.sub.r which are necessary for the simulation of the on-wafer de-embedding dummies by this iterative fitting between Y.sub.DT and Y.sub.AT (σ, ∈.sub.r).

[0075] (5) The solved Y.sub.ee, Y.sub.ii, Y.sub.ei and Y.sub.ie and the whole Y-parameter admittance matrix Y.sub.M of said DUT obtained by measurement are substituted into the right side of Y.sub.A=−Y.sub.ii−Y.sub.ie(Y.sub.M−Y.sub.ee).sup.−1Y.sub.ei to complete said general four-port on-wafer high frequency de-embedding. That is, the intrinsic Y-parameter admittance matrix Y.sub.A of said DUT is calculated by using the whole Y-parameter admittance matrix Y.sub.M of said DUT obtained by measurement.

[0076] Implementation 2: one implementation of a general four-port on-wafer high frequency de-embedding method for a case in which all the on-wafer parasitics to be stripped form a parasitic four-port network of passivity, reciprocity and symmetry.

[0077] (1) Four on-wafer strip-line Thru de-embedding dummies of passivity, reciprocity and symmetry and different in width are designed and fabricated together with a device under test (DUT) to be de-embedded, i.e., Thru 1, Thru 2, Thru 3 and Thru 4 which are respectively denoted by T1, T2, T3 and T4. Their schematic structure diagrams are respectively as shown in FIGS. 9, 10, 11 and 12, wherein said strip-line Thru signal wires have widths of W.sub.1, W.sub.2, W.sub.3 and W.sub.4, respectively, but they all have the same length of L, and they all have the same thickness of t. The dielectric layers between the signal wires and the upper and the lower grounded metals have the same thickness of b/2.

[0078] (2) By using on-wafer high frequency measurement instruments and techniques, the whole Y-parameter admittance matrix Y.sub.M of said DUT and the whole Y-parameter admittance matrices Y.sub.Mj (j=1,2,3,4) of said four on-wafer strip-line Thru de-embedding dummies are obtained by measurement.

[0079] (3) In the premise of giving consideration to the distributive nature of high frequency characteristics of said on-wafer de-embedding dummies, analytical models for said four on-wafer strip-line Thru de-embedding dummies are built, respectively, and following intrinsic Y-parameter admittance matrices of said four Thru de-embedding dummies are calculated by the built models:

[00014] $.Math. Y_{Aj} (σ, {.Math.}_{r}) = [\begin{matrix} y_{Aj .Math. .Math. 11} (σ, {.Math.}_{r}) & y_{Aj .Math. .Math. 12} (σ, {.Math.}_{r}) \\ y_{Aj .Math. .Math. 12} (σ, {.Math.}_{r}) & y_{Aj .Math. .Math. 11} (σ, {.Math.}_{r}) \end{matrix}], .Math. y_{Aj .Math. .Math. 11} (σ, {.Math.}_{r}) = \frac{(W_{j} + 0.441 .Math. .Math. b) .Math. \sqrt{ε_{r}}}{30 .Math. .Math. π .Math. .Math. b .Math. .Math. \tanh .Math. {\begin{matrix} \frac{0.0027 .Math. .Math. bL}{(b - t) .Math. (W_{j} + 0.441 .Math. .Math. b)} [1 + \frac{2 .Math. W_{j}}{b - t} + \frac{1 .Math. b + t}{π .Math. .Math. b - t} .Math. \ln (\frac{2 .Math. b - t}{t})] \\ \sqrt{\frac{π .Math. .Math. ε_{r} .Math. μ_{0} .Math. f}{σ}} + j .Math. \frac{2 .Math. .Math. π .Math. .Math. fL .Math. \sqrt{ε_{r}}}{c} \end{matrix}}}, .Math. y_{Aj .Math. .Math. 12} (σ, {.Math.}_{r}) = - \frac{(W_{j} + 0.441 .Math. .Math. b) .Math. \sqrt{ε_{r}}}{30 .Math. .Math. π .Math. .Math. b .Math. .Math. \sinh .Math. {\begin{matrix} \frac{0.0027 .Math. .Math. bL}{(b - t) .Math. (W_{j} + 0.441 .Math. .Math. b)} [1 + \frac{2 .Math. W_{j}}{b - t} + \frac{1 .Math. b + t}{π .Math. .Math. b - t} .Math. \ln (\frac{2 .Math. b - t}{t})] \\ \sqrt{\frac{π .Math. .Math. ε_{r} .Math. μ_{0} .Math. f}{σ}} + j .Math. \frac{2 .Math. .Math. π .Math. .Math. fL .Math. \sqrt{ε_{r}}}{c} \end{matrix}}}$ $.Math. (j = 1, 2, 3, 4),$

[0080] where, σ and ∈.sub.r, as model parameters of models on which said calculation is based, are respectively the conductivity of metals in the on-wafer Thru de-embedding dummies and the relative dielectric constant of the dielectric material, μ.sub.0=4π×10.sup.−7H/m is the permeability of vacuum, f is the frequency of test and simulation, and c=3×10.sup.8 m/s. is the speed of light in vacuum.

[0081] (4) An equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei(Y.sub.Aj(σ, ∈.sub.r)+Y.sub.ii).sup.−1Y.sub.ei(j=1,2,3,4) is solved for the elements of the related admittance matrixes Y.sub.ee, Y.sub.ii and Y.sub.ei of the parasitic four-port network to be stripped in de-embedding and said model parameters σ and ∈.sub.r as unknowns. Specifically, the following steps are included:

[0082] (4-1) on the basis that the initial default values are taken for the model parameters σ and ∈.sub.r respectively, obtaining the values of Y.sub.Aj(σ, ∈.sub.r)(j=1,2,3,4) by calculation;

[0083] (4-2) after solving an equation set Y.sub.Mj=Y.sub.ee−Y.sub.ei(Y.sub.Aj(σ,∈.sub.r)+Y.sub.ii).sup.−1Y.sub.ei (j=1,2,3) by using the known measurement values Y.sub.Mj (j=1,2,3) of the three de-embedding dummies T1, T2 and T3 and said calculated values Y.sub.Aj(σ,∈.sub.r)(j=1,2,3) to obtain the values of Y.sub.ee, Y.sub.ii and Y.sub.ei (it is unnecessary to completely solve Y.sub.ei, as long as the square of its elements is obtained), substituting the known measurement value Y.sub.M4 of the T4 de-embedding dummy and said obtained values of Y.sub.ee, Y.sub.ii and Y.sub.ei into the right side of Y.sub.D4=−Y.sub.ii−Y.sub.ei(Y.sub.M4−Y.sub.ee).sup.−1Y.sub.ei to obtain by calculation the de-embedded Y-parameter admittance matrix Y.sub.D4 of the T4 de-embedding dummy, specifically including the following steps:

[0084] (4-2-1) obtaining by calculation matrices Z.sub.2A=(Y.sub.A2−Y.sub.A1).sup.−1, Z.sub.2M=(Y.sub.M2−Y.sub.M1).sup.−1, Z.sub.3A=(Y.sub.A3−Y.sub.Aj).sup.−1 and Z.sub.3M=(Y.sub.M3−Y.sub.M1).sup.−1, where exponent −1 represents matrix inversion;

[0085] (4-2-2) calculating quantities

[00015] $r_{2 .Math. p} = \frac{z_{2 .Math. A .Math. .Math. 11} + z_{2 .Math. A .Math. .Math. 12}}{z_{2 .Math. M .Math. .Math. 11} + z_{2 .Math. M .Math. .Math. 12}}, r_{3 .Math. p} = \frac{z_{3 .Math. A .Math. .Math. 11} + z_{3 .Math. A_{12}}}{z_{3 .Math. M .Math. .Math. 11} + z_{3 .Math. M .Math. .Math. 12}}, r_{2 .Math. m} = \frac{z_{2 .Math. A .Math. .Math. 11} - z_{2 .Math. A .Math. .Math. 12}}{z_{2 .Math. M .Math. .Math. 11} - z_{2 .Math. M .Math. .Math. 12}}, .Math. r_{3 .Math. m} = \frac{z_{3 .Math. A .Math. .Math. 11} - z_{3 .Math. A .Math. .Math. 12}}{z_{3 .Math. M_{11} - z_{3 .Math. M .Math. .Math. 12}}}, y_{p} = \frac{r_{3 .Math. p} (y_{A .Math. .Math. 311} + y_{A .Math. .Math. 312}) - r_{2 .Math. p} (y_{A .Math. .Math. 211} + y_{A .Math. .Math. 212})}{r_{2 .Math. p} - r_{3 .Math. p}}, .Math. y_{m} = \frac{r_{3 .Math. m} (y_{A .Math. .Math. 311} - y_{A .Math. .Math. 312}) - r_{2 .Math. m} (y_{A .Math. .Math. 211} - y_{A .Math. .Math. 212})}{r_{2 .Math. m} - r_{3 .Math. m}}, .Math. x_{p} = r_{2 .Math. p} (y_{p} + y_{A .Math. .Math. 111} + y_{A .Math. .Math. 112}) .Math. (y_{p} + y_{A .Math. .Math. 211} + y_{A .Math. .Math. 212}) .Math. .Math. and$ $x_{m} = r_{2 .Math. m} (y_{m} + y_{A .Math. .Math. 111} - y_{A .Math. .Math. 112}) .Math. (y_{m} + y_{A .Math. .Math. 211} - y_{A .Math. .Math. 212}),$

where z.sub.2A11 and z.sub.2A12 are respectively z.sub.11 and z.sub.12 of Z.sub.2A; z.sub.2M11 and z.sub.2M12 are respectively and z.sub.11 and z.sub.12 of Z.sub.2M; z.sub.3A11 and z.sub.3A12 are respectively z.sub.11 and z.sub.12 of Z.sub.3A; z.sub.3M11 and z.sub.3M12 are respectively z.sub.11 and z.sub.12 of Z.sub.3M; y.sub.A111 and y.sub.A112 are respectively y.sub.11 and y.sub.12 of Y.sub.A1; y.sub.A211 and y.sub.A212 are respectively y.sub.11 and y.sub.12 of Y.sub.A2, y.sub.A311 and y.sub.A312 are respectively y.sub.11 and y.sub.12 of Y.sub.A3;

[0086] (4-2-3) calculating quantities

[00016] $y_{ii .Math. .Math. 11} = \frac{y_{p} + y_{m}}{2} .Math. .Math. and .Math. .Math. y_{ii .Math. .Math. 12} = \frac{y_{p} - y_{m}}{2}$

to obtain the matrix

[00017] $Y_{ii} = [\begin{matrix} y_{ii .Math. .Math. 11} & y_{ii .Math. .Math. 12} \\ y_{ii .Math. .Math. 12} & y_{ii .Math. .Math. 11} \end{matrix}];$

[0087] (4-2-4) obtaining by calculation the square of elements y.sub.11 and y.sub.12 of the matrix

[00018] $Y_{ei} .Math. : .Math. .Math. y_{ei .Math. .Math. 11}^{2} = \frac{x_{p} + x_{m} \pm 2 .Math. \sqrt{x_{p} .Math. x_{m}}}{4} .Math. .Math. and$ $y_{ei .Math. .Math. 12}^{2} = \frac{x_{p} + x_{m} \mp 2 .Math. \sqrt{x_{p} .Math. x_{m}}}{4},$

where the plus-minus sign is selected such that, at the low frequency limit, y.sub.ei11.sup.2 tends to infinity and y.sub.ei12.sup.2 tends to zero, and both y.sub.ei11.sup.2 and y.sub.ei12.sup.2 continuously vary with frequency;

[0088] (4-2-5) obtaining by calculation a matrix Z.sub.Aj=(Y.sub.A1+Y.sub.ii).sup.−1;

[0089] (4-2-6) calculating quantities

[00019] $y_{Ai .Math. .Math. 11} = z_{Ai .Math. .Math. 11} .Math. \frac{x_{p} + x_{m}}{2} + z_{Ai .Math. .Math. 12} .Math. \frac{x_{p} - x_{m}}{2} .Math. .Math. and$ $y_{Ai .Math. .Math. 12} = z_{Ai .Math. .Math. 12} .Math. \frac{x_{p} + x_{m}}{2} + z_{Ai .Math. .Math. 11} .Math. \frac{x_{p} - x_{m}}{2}$

to obtain a matrix

[00020] $Y_{Ai} = [\begin{matrix} y_{Ai .Math. .Math. 11} & y_{Ai .Math. .Math. 12} \\ y_{Ai .Math. .Math. 12} & y_{Ai .Math. .Math. 11} \end{matrix}],$

where z.sub.Ai11 and z.sub.Ai12 are respectively z.sub.11 and z.sub.12 of Z.sub.Ai;

[0090] (4-2-7) obtaining by calculation the matrix Y.sub.ee=Y.sub.M1+Y.sub.Ai;

[0091] (4-2-8) obtaining by calculation a matrix Z.sub.Me4=(Y.sub.ee−Y.sub.M4).sup.−1;

[0092] (4-2-9) calculating quantities

[00021] $y_{Me .Math. .Math. 411} = z_{Me .Math. .Math. 411} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 412} + z_{Me .Math. .Math. 421}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 422} .Math. y_{ei .Math. .Math. 12}^{2}, .Math. y_{Me .Math. .Math. 412} = z_{Me .Math. .Math. 412} = y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 411} + z_{Me .Math. .Math. 422}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 421} .Math. y_{ei .Math. .Math. 12}^{2}, .Math. y_{Me .Math. .Math. 421} = z_{Me .Math. .Math. 421} .Math. Y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 411} + z_{Me .Math. .Math. 422}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 412} .Math. y_{ei .Math. .Math. 12}^{2} .Math. .Math. and$ $y_{Me .Math. .Math. 422} = z_{Me .Math. .Math. 422}^{2} .Math. Y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 412} + z_{Me .Math. .Math. 421}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 411} .Math. y_{ei .Math. .Math. 12}^{2}$

to obtain a matrix

[00022] $Y_{Me .Math. .Math. 4} = [\begin{matrix} y_{Me .Math. .Math. 411} & y_{Me .Math. .Math. 412} \\ y_{Me .Math. .Math. 421} & y_{Me .Math. .Math. 422} \end{matrix}],$

where z.sub.Me411, z.sub.Me412, z.sub.Me421 and z.sub.Me422 are respectively z.sub.11, z.sub.12, z.sub.21 and z.sub.22 of Z.sub.Me4;

[0093] (4-2-10) obtaining by calculation the de-embedded Y-parameter matrix Y.sub.D4=Y.sub.Me4 Y.sub.ii of the T4 de-embedding dummy;

[0094] (4-3) comparing the calculated Y.sub.D4 with the simulated value Y.sub.A4 (σ, ∈.sub.r) of the T4 de-embedding dummy already obtained in Step (4-1), properly correcting the values of the model parameters σ and ∈.sub.r and then turning back to Step (4-1) if the difference between the two does not meet the set error standard, and obtaining the values of Y.sub.Aj(σ,∈.sub.r)(j=1,2,3,4) again by calculation by using the corrected model parameters; and

[0095] (4-4) once turning back to Step (4-1), starting a cyclic iterative fitting process from Step (4-1) to Step (4-3), performing iterative optimization fitting by a trial and error method, and continuously correcting the values of the model parameters σ and ∈.sub.r used for calculation of intrinsic Y-parameter admittance matrices of the de-embedding dummies until a difference between the de-embedded Y-parameter admittance matrix Y.sub.D4 of the T4 de-embedding dummy and a corresponding calculated value Y.sub.A4(σ, ∈.sub.r) meets the set error standard, that is, determining the final values for the undetermined mode parameters σ and ∈.sub.r which are necessary for the calculation of the de-embedding dummies by this iterative fitting between Y.sub.D4 and Y.sub.A4(σ,∈.sub.r).

[0096] (5) The Y.sub.ee, Y.sub.ii and Y.sub.ei (actually, it is unnecessary to completely determine a specific value for all elements in Y.sub.ei, as long as the square of the elements is determined) solved in Step (4) and the whole Y-parameter admittance matrix Y.sub.M of said DUT obtained by measurement in Step (2) are substituted into the right side of Y.sub.A=−Y.sub.ii−Y.sub.ei (Y.sub.M−Y.sub.ee).sup.−1Y.sub.ei to complete said general four-port on-wafer high frequency de-embedding of the parasitic four-port network, to be stripped, of passivity, reciprocity and symmetry. That is, the intrinsic Y-parameter admittance matrix Y.sub.A of said DUT is calculated by using the whole Y-parameter admittance matrix Y.sub.M of said DUT obtained by measurement. Specifically, the following steps are included:

[0097] (5-1) obtaining by calculation a matrix Z.sub.Me=(Y.sub.ee−Y.sub.M).sup.−1;

[0098] (5-2) calculating quantities

[00023] $y_{Me .Math. .Math. 11} = z_{Me .Math. .Math. 11} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 12} + z_{Me .Math. .Math. 21}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 22} .Math. y_{ei .Math. .Math. 12}^{2}, .Math. y_{Me .Math. .Math. 12} = z_{Me .Math. .Math. 12} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 11} + z_{Me .Math. .Math. 22}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 21} .Math. y_{ei .Math. .Math. 12}^{2}, .Math. y_{Me .Math. .Math. 21} = z_{Me .Math. .Math. 21} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 11} + z_{Me .Math. .Math. 22}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 12} .Math. Y_{ei .Math. .Math. 12}^{2} .Math. .Math. and$ $y_{Me .Math. .Math. 22} = z_{Me .Math. .Math. 22} .Math. y_{ei .Math. .Math. 11}^{2} + (z_{Me .Math. .Math. 12} + z_{Me .Math. .Math. 21}) .Math. \frac{x_{p} - x_{m}}{4} + z_{Me .Math. .Math. 11} .Math. y_{ei .Math. .Math. 12}^{2}$

to obtain a matrix

[00024] $Y_{Me} = [\begin{matrix} y_{Me .Math. .Math. 11} & y_{Me .Math. .Math. 12} \\ y_{Me .Math. .Math. 21} & y_{Me .Math. .Math. 22} \end{matrix}],$

where z.sub.Me11, z.sub.Me12, z.sub.Me21 and Z.sub.Me22 are respectively z.sub.11, z.sub.12, z.sub.21 and z.sub.22 of Z.sub.Me; and

[0099] (5-3) obtaining by calculation the intrinsic Y-parameter admittance matrix Y.sub.A=Y.sub.Me−Y.sub.ii of said DUT to be de-embedded.

[0100] The foregoing descriptions are merely preferred embodiments of the present invention and the protection scope of the present invention is not limited thereto. Any changes or replacements that readily occur to those skilled in the art within the technical scope disclosed in the present invention should be included within the protection scope of the present invention. Hence, the protection scope of the present invention should be subject to the protection scope defined in the claims.

GENERAL FOUR-PORT ON-WAFER HIGH FREQUENCY DE-EMBEDDING METHOD

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G01R31/2856

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H01L22/34

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H01L22/14

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H01L22/32

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Abstract

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