Methods for performing model-based lithography guided layout design

Abstract

Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.

Claims

1. A method of determining a location of one or more features within a mask layout of a device manufacturing process involving.sub.— lithography, the method comprising: performing, by a hardware computer, a simulation involving the mask layout based on a placement of a first feature in the mask layout, wherein performing the simulation includes generating a SRAF guidance map that is a two-dimensional set of values respectively corresponding to points in the mask layout; and determining a location for placing a second feature in the mask layout based on the two-dimensional set of values respectively corresponding to points in the mask layout, wherein the determined location comprises one or more of the points.

2. The method according to claim 1, further comprising: placing the second feature at the determined location; and iteratively repeating the steps of performing a simulation involving the mask layout based on previously placed features, determining the location for placing another feature within the mask layout and placing the another feature until a desired number of features has been placed in the mask layout.

3. The method according to claim 2, further comprising optimizing the mask layout using an optical proximity correction.

4. The method according to claim 2, further comprising optimizing the mask layout using a resolution enhancement technique.

5. The method according to claim 2, further comprising generating a plurality of layout guidance maps, wherein each layout guidance map (LGM) is representative of simulated imaging performance of a mask layout.

6. The method according to claim 5, wherein each LGM comprises a two-dimensional image including a plurality of pixel values, and wherein the placement of a feature is calculated based on one or more of the pixel values.

7. The method according to claim 6, wherein each of the pixel values is indicative of the effect on printability of one or more patterns in the mask layout of a portion of the feature placed on the pixel.

8. The method according to claim 7, wherein the effect on printability is a negative effect.

9. A method of placing a plurality of features of a design layout into a mask layout of a device manufacturing process involving lithography, the method comprising: placing a first one of the plurality of features from the design layout in the mask layout; generating, using a computer simulation performed by a hardware computer, a two-dimensional set of values respectively corresponding to points in the mask layout based on the placement of the first feature; and determining a location for placing a second different one of the plurality of features from the design layout in the mask layout based on the two-dimensional set of values respectively corresponding to points in the mask layout, wherein the determined location comprises one or more of the points.

10. The method according to claim 9, further comprising: placing the second different one of the plurality of features from the design layout at the determined location in the mask layout; and iteratively repeating the steps of generating the two-dimensional set of values based on previously placed ones of the plurality of features from the design layout in the mask layout, determining the location for placing another different one of the plurality of features from the design layout within the mask layout and placing the another different feature until all of the plurality of features from the design layout have been placed in the mask layout.

11. The method according to claim 9, wherein the generating includes generating a layout guidance map (LGM), wherein the LGM comprises a two-dimensional image including a plurality of pixel values, and wherein the placement of the second different feature is determined based on one or more of the pixel values.

12. The method according to claim 11, wherein each of the pixel values is indicative of the effect on printability of one or more patterns in the mask layout of a portion of a feature placed on the pixel.

13. The method according to claim 12, wherein the effect on printability is a negative effect.

14. The method according to claim 9, wherein the generating includes generating a sub-resolution assist feature (SRAF) guidance map (SGM) for placing SRAFs different from the plurality of features from the design layout into the mask layout.

15. The method according to claim 14, wherein the SGM comprises an image having a plurality of pixels corresponding to the mask layout, and wherein the generating step includes computing, for each pixel in the image, whether a SRAF located in the mask layout corresponding to the pixel would contribute positively to edge behavior of at least one feature in the mask layout.

16. The method according to claim 10, wherein the generating includes generating a sub-resolution assist feature (SRAF) guidance map (SGM) for placing SRAFs different from the plurality of features from the design layout into the mask layout.

17. The method according to claim 16, wherein the SGM comprises an image having a plurality of pixels corresponding to the mask layout, and wherein the generating step includes computing, for each pixel in the image, whether a SRAF located in the mask layout corresponding to the pixel would contribute positively to edge behavior of at least one feature in the mask layout.

18. A non-transitory computer-readable medium having instructions configured to, when executed on a computing device: perform simulation involving a mask layout of a device manufacturing process involving lithography, based on a placement of a first feature in the mask layout, wherein performance of the simulation includes generation of a SRAF guidance map that is a two-dimensional set of values respectively corresponding to points in the mask layout; and determine a location for placing a second feature in the mask layout based on the two-dimensional set of values respectively corresponding to points in the mask layout, wherein the determined location comprises one or more of the points.

19. A non-transitory computer-readable medium having instructions configured to, when executed on a computing device: generate, using a computer simulation, a two-dimensional set of values respectively corresponding to points in a mask layout of a device manufacturing process involving lithography, based on a placement of a first one of the plurality of features from a design layout in the mask layout; and determine a location for placing a second different one of the plurality of features from the design layout in the mask layout based on the two-dimensional set of values respectively corresponding to points in the mask layout, wherein the determined location comprises one or more of the points.

20. The non-transitory computer-readable medium according to claim 19, wherein the instructions to generate the two-dimensional set of values are further configured generate a sub-resolution assist feature (SRAF) guidance map (SGM) for placing SRAFs different from the plurality of features from the design layout into the mask layout.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a flowchart of a prior art method for applying resolution enhancement techniques to a design layout;

(2) FIG. 2 is an flowchart illustrating an example of the steps for performing the lithography guided layout process according to one embodiment of the invention;

(3) FIG. 3 is an exemplary embodiment of an SRAF guidance map (SGM) for a design layout of a contact layer;

(4) FIG. 4 is an exemplary flowchart illustrating a first method for generating an SRAF guidance map (SGM); and

(5) FIG. 5 is an exemplary flowchart illustrating a second method step for generating an SRAF guidance map (SGM).

(6) FIG. 6A is a diagram of one embodiment of test features and a coordinate system for generating SRAF placement rules using an SGM, according to the invention;

(7) FIG. 6B is a diagram of one embodiment of test contact features and a coordinate system for generating SRAF placement rules using an SGM, according to the invention;

(8) FIG. 6C is a diagram of one embodiment of test features and a coordinate system for generating SRAF placement rules using an SGM, according to the invention;

(9) FIG. 7 is a flowchart of method steps for rule-free placement of SRAFs using an SGM, according to one embodiment of the invention;

(10) FIG. 8 is a flowchart of method steps for integrating model-based SRAF generation with applying OPC corrections, according to one embodiment of the invention;

(11) FIG. 9 is a diagram showing critical dimensions of features in a layout after application of a prior art SRAF placement rule; and

(12) FIG. 10 is a diagram showing critical dimensions of features in a layout after application of SRAF placement rules created using an SGM, according to one embodiment of the invention.

(13) FIG. 11 is a flowchart of a method for generating model-based subresolution features according to one embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

(14) FIG. 2 is an exemplary flowchart illustrating an exemplary process of the LGL process of the present invention. In the first step of the process (Step 210), utilizing the target design, one or more of the features included in the target design are placed in a mask pattern in accordance with their corresponding positions in the target pattern. It is noted that the number of features from the target pattern to be added to the mask pattern each iteration can be determined, for example, by the operator, or may be defined as some fixed number, or may be governed by the process being utilized and the number of features deemed critical in the target design. In another variation, it is possible to add only a single feature per iteration.

(15) At step 220, a simulation of the illumination of the current mask pattern for a given lithography process (i.e., the process to be utilized to illuminate the target pattern) is performed so as to produce an aerial image (or equivalent thereof) which indicates the imaging performance of the current mask pattern including an indication of whether or not the areas adjacent and surrounding the features on the current mask contribute positively or negatively to the imaging of the features on the current mask. As noted above, any suitable model which provides the foregoing information may be utilized. In the given embodiment, the model utilized is the one for generating the SGM noted above. Referring to FIG. 2, in Steps 220 and 230, the aerial image corresponding to the current mask is simulated utilizing, for example, either a single-kernel or multi-kernel computation, and then the SGM is determined, for example, in the manner detailed below. As noted, the SGM provides on a pixel-by-pixel basis an indication of whether or not the given pixel would contribute positively to the through-focus and through-dose edge behavior of existing mask patterns if an addition feature was positioned at the location of the given pixel. In other words, if the SGM value is positive, then a hypothetical unit source placed there would improve the overall through-focus and through-dose edge behavior of existing patterns; the larger the SGM value, the greater improvement. If the SGM value is negative, then a hypothetical unit source placed there would negatively impact or degrade the overall through-focus and through-dose edge behavior of existing patterns.

(16) Once the SGM is generated, it corresponds to the “vote map” or layout guidance map (LGM), and represents the integration of all the edge points for the current features on the mask for each pixel in the field area of the current mask (i.e., areas not already having features disposed thereon), and provides an indication of whether or not each pixel in the field area is suitable for having a feature disposed thereon (i.e., the pixel contributes positively to the imaging of the current mask features) or should be avoided if possible (i.e., the pixel contributes negatively to the imaging of the current mask features).

(17) In the next step of the process (Step 240), the LGM or vote map is utilized to determine the preferred location of the next feature or set of features to be placed in the mask design. As one possible example (alternative methods are disclosed below), this can be accomplished, for example, by integrating the value of the pixels within the area of the LGM in which the next feature has been originally designated for, and then if the value of the summation of the pixels in this area is above some predefined threshold (which indicates the feature can be properly imaged), the feature is added to the mask design in the designated space/location. However, if the value of the summation of the pixels is below the predefined threshold, the LGM is then utilized to determine if it is possible to reposition the feature within the mask design such that the summation of the pixels in the area corresponding to the adjusted location of the feature is above the predefined threshold. By shifting the location of feature in one or more directions within the mask design, it is possible to increase the value of the summation of the pixels, and thereby optimize the affect the feature to be added has on the existing features.

(18) Once the features currently under consideration are placed within the mask design, the process proceeds to Step 250, which determines if all features in the target pattern or design have been processed. If the answer is YES, the process proceeds to Step 260 and the layout is complete. If the answer is NO, the process proceeds back to Step 220 and re-computes a new SGM which includes all of the features currently placed in the mask design, including those added during the previous iteration, and then re-performs Steps 220-250 until all features in the target pattern have been processed.

(19) FIG. 11 is a flowchart that depicts one method for generating model-based sub-resolution assist features, according to one embodiment of the invention. In step 1110, a mask layout is obtained. The mask layout is typically the pre-OPC (design) layout. In step 1112, an SRAF guidance map (SGM) is created for the mask layout. The SGM is an image in which each pixel value is an indication of whether the pixel would contribute positively to through-focus and through-dose edge behavior of features in the mask layout if the pixel is included as part of an SRAF. If the SGM value for a pixel is positive, then a unit source (i.e., a single pixel SRAF) at that pixel location would improve the overall through-focus and through-dose edge behavior, and the larger the SGM value, the greater the improvement. Creating the SGM is further described below in conjunction with FIGS. 4 and 5. In step 1114, SRAF placement rules for the mask layout are created using the SGM. Creation of SRAF placement rules based on the SGM is further described below in conjunction with FIGS. 6A, 6B, and 6C. In step 1116, SRAFs are placed in the post-OPC layout using the SRAF placement rules. In optional step 1118, the placed SRAFs are fine tuned using the SGM. For example, the SGM may indicate that a placed SRAF should be slightly wider than the width dictated by the rule.

(20) FIG. 3 shows an example of an SGM of a contact layer, where the squares depict the contacts 310. If mask rule check and SRAF printability issues are not considered, in the given exemplary SGM, pixels in the bright regions not within or immediately adjacent to the features, such as region 312, have positive SGM values and therefore would be suitable for placement of new patterns. Pixels in dark regions, which are pixels having a negative SGM value, should be avoided with respect to the placement of new patterns if possible. It is noted that an SGM can be generated for a mask layout of any mask layer including both dark field and clear masks.

(21) It is noted that through-focus and through-dose edge behavior can be described using the edge slope of the aerial image at the design target edge locations. A higher edge slope improves the process window robustness of the feature, both for changes in dose and for defocus. Dose change is essentially a threshold change and defocus can be well approximated by a low-pass blurring effect. High edge slope improves the robustness against variations in both dose and defocus, which improves the overall process window. So the goal of improving process window robustness is transformed into the goal of increasing the edge slope at the design target edge locations.

(22) FIG. 4 is an exemplary flowchart of a first method for generating an SRAF guidance map (SGM). The method of FIG. 4 is a single-kernel approach in which it is assumed that the optical path of the exposure tool is “near” coherent and only the first term of the TCC for the exposure tool is considered.

(23) The partial coherent aerial image intensity can be formulated as the following:
I=L.sub.0*(MF.sub.0).sup.2+L.sub.1*(MF.sub.1).sup.2+ . . . +L.sub.n*(MF.sub.n).sup.2

(24) Where: M is the mask image; n is the number of eigenvalues of the Transmission Cross Coefficients (TCCs); F.sub.0 to F.sub.n are the real-space filters corresponding to each TCC term; L.sub.0 to L.sub.n are the corresponding eigenvalues of each TCC term; “” means convolution, and “*” is the regular multiplication.

(25) In the single kernel approach of FIG. 4, the emphasis is on the aerial image amplitude from the kernel corresponding to the eigenvalues with the largest absolute value, then:
A=√{square root over (I)}≈MF
where F=F(x,y) is a scalar field. This field's gradient vector is denoted as D:D(x, y)=(D.sub.x, D.sub.y) where (D.sub.x, D.sub.y) is a vector field with two components:

(26) $D_x=\frac{\partial F}{\partial x}$$D_y=\frac{\partial F}{\partial y}$

(27) For an edge, its edge vector Ē is defined as the following: its direction is perpendicular to the edge, and points to the direction with positive edge slope in aerial image A.

(28) Now, from one edge location, the edge's environment is considered as a field. Assuming that the unit source is at the field location (x,y), then the aerial image amplitude for an arbitrary point (x.sub.1, y.sub.1) is F(x.sub.1−x, y.sub.1−y). This unit source's contribution to the slope of the edge point, which is located at (x′,y′), is proportional to:
S(x,y,x′,y′)=D(x′−x,y′−y)*E(x′,y′)

(29) where “*” denotes an inner vector multiplication, so the result is a scalar S(x,y,x′,y′).

(30) So, for each edge point, every field location's contribution to its slope can be calculated. Unit sources at some field locations will give positive contribution, some negative. This contribution can then be regarded as the “vole” by this edge point on whether that field point in the mask layout should be placed with a unit source.

(31) Now, for each field point, the “votes” from all edge points are integrated to produce an integrated final vote for this field point. This final vote is on whether this field point should be placed with a unit source. Hence, a threshold is applied to this vote field to decide where to place the next pattern.

(32) One problem arises if such a filtering operation is used is that it is applied per edge point. Since the edge point could be very irregular, this operation may be quite computationally expensive. Other disadvantages of this brute-force vote count scheme are: (1) edges are sampled, so the effects from a continuous edge are not considered; (2) corners' edge location is from the pre-OPC layout's sharp corners, which is actually not the desired contour target location. The true target contour of a corner is actually a round corner, and the slope on that round contour should be enhanced.

(33) To address this problem, the above-described vote-counting operation is transformed into a classical image processing algorithm, enabling the vote count using three Fast Fourier Transform (FFT) operations. By formulating the vote counting process using FFT operations, the computation speed is vastly improved, with or without hardware accelerations, such as use of the full-chip lithography simulation system disclosed in U.S. Pat. No. 7,003,758. Furthermore, using FFT computations automatically overcomes the two disadvantages mentioned above. All edges are continuously considered, and corners are rounded (the rounding amount depends on the pixel size).

(34) In step 418, a pre-OPC mask layout M(x,y) is obtained. The gradient map G(x, y)=(G.sub.x, G.sub.y) of the pre-OPC mask layout is a vector map composed of:

(35) $G_x=\frac{\partial M\left(x,y\right)}{\partial x}$$G_y=\frac{\partial M\left(x,y\right)}{\partial y}$

(36) Now, the exact edge points are all the points that have gradients. The vote on a particular field point comes from every point in the mask image with a non-zero gradient, based on whether a unit source on that field point will enhance the gradient. For a unit source at field point (x,y), its contribution to a gradient value at (x′,y′) is:

(37) $\begin{array}{c}v\left(x,y,x^{\prime },y^{\prime }\right)=\stackrel{.fwdarw.}{D}\left(x^{\prime }-x,y^{\prime }-y\right)*\stackrel{.fwdarw.}{G}\left(x^{\prime },y^{\prime }\right)\\ =G_x\left(x^{\prime },y^{\prime }\right)D_x\left(x^{\prime }-x,y^{\prime }-y\right)-\\ G_y\left(x^{\prime },y^{\prime }\right)D_y\left(x^{\prime }-x,y^{\prime }-y\right)\end{array}$

(38) Again, “*” represents an inner vector multiplication. The “v” value can be treated as the vote from the gradient at (x,y) to the field point (x′,y′), so the total vote sum from the unit source at field point (x,y) is

(39) $\begin{array}{c}V\left(x,y\right)=\underset{\left(x^{\prime },y^{\prime }\right)}{\overset{}{.Math.}}v\left(x,y,x^{\prime },y^{\prime }\right)\\ =\underset{\left(x^{\prime },y^{\prime }\right)}{\overset{}{.Math.}}\left[\begin{array}{c}{G}_x\left(x^{\prime },y^{\prime }\right)D_x\left(x^{\prime }-x,y^{\prime }-y\right)+\\ G_y\left(x^{\prime },y^{\prime }\right)D_y\left(x^{\prime }-x,y^{\prime }-y\right)\end{array}\right]\end{array}$

(40) G.sub.x and G.sub.y are the two gradient component images of M(x,y), and D.sub.x and D.sub.y are prior known filters. The SUM operation is now a standard convolution filtering on a regular image grid. So V can be computed by two filtering operations. These two filtering operations are quite expensive if performed in real-space, since D.sub.x and D.sub.y are non-separable large filters. So, to make these two filtering operations manageable, they are performed in the frequency domain.

(41) In the frequency domain, there is no need to compute G.sub.x and G.sub.y explicitly. Instead, G.sub.x and G.sub.y can be computed directly from M(x,y).

(42) If Z(x) is an arbitrary function, FFT(Z(x)) is its Fourier Transform, and F(x)=dZ/dx is its derivative, then the Fourier Transform of Z(x) is
FFT(Z′(x))=if FFT(Z(x))

(43) Where i is the imaginary unit, f is the frequency. As a result,
FFT(G.sub.x)=if.sub.xFFT(M),FFT(G.sub.y)=if.sub.yFFT(M)
FFT(D.sub.x)=if.sub.xFFT(F),FFT(D.sub.y)=if.sub.yFFT(F)

(44) So the total vote sum, the SGM value, at field point (x,y), is

(45) $\begin{array}{c}V\left(x,y\right)=\underset{\left(x^{\prime },y^{\prime }\right)}{\overset{}{.Math.}}\left[\begin{array}{c}{G}_x\left(x^{\prime },y^{\prime }\right)D_x\left(x^{\prime }-x,y^{\prime }-y\right)+\\ G_y\left(x^{\prime },y^{\prime }\right)D_y\left(x^{\prime }-x,y^{\prime }-y\right)\end{array}\right]\\ =G_x\left(x,y\right).Math.D_x\left(-x,-y\right)-G_y\left(x,y\right).Math.D_y\left(-x,-y\right)\\ =-\mathrm{IFFT}\left(\mathrm{FFT}\left(G_x\right)*\mathrm{IFFT}\left(D_x\right)+\mathrm{FFT}\left(G_y\right)*\mathrm{IFFT}\left(D_y\right)\right)\\ =\mathrm{IFFT}\left(\left(f_x^2+f_y^2\right)\mathrm{FFT}\left(M\right)*\mathrm{IFFT}\left(F\right)\right)\end{array}$

(46) Where IFFT( ) represents the inverse Fast Fourier Transform, “” means convolution, and “*” is the regular multiplication. Since (f.sub.x, f.sub.y)=(f.sub.x.sup.2+f.sub.y.sup.2)IFFT(F) can be pre-computed because the optical model is the same for any mask, the real-time computation of the SGM value at each field point only involves two FFT computations: FFT(M) and one IFFT. In step 420, an FFT is applied to the pre-OPC mask layout to produce FFT(M). A TCC is typically decomposed into convolution kernels, using an eigen-series expansion for computation speed and storage. Therefore, in step 410, a decomposed version of TCC is loaded, and then in steps 412 and 414, FFT(F) is converted to IFFT(F). In step 416, .sub.3(f.sub.x, f.sub.y)=(f.sub.x.sup.2+f.sub.y.sup.2)IFFT(F) is computed. Then, in step 420, .sub.3(f.sub.x, f.sub.y) is multiplied by FFT(M) and in step 422, the IFFT is taken of the product to produce the SGM for the entire pre-OPC design layout.

(47) FIG. 5 is an exemplary flowchart of a second method for generating an SRAF guidance map (SGM). The FIG. 5 embodiment is a multi-kernel approach in which the optical path of the exposure tool is not assumed to be near coherent. For ease of discussion, the following equations are written as if there is only one spatial dimension.

(48) Mask transmittance M(x) is separated into a pre-OPC component (T), an SRAF component (A) and an OPC corrections component (C):
M(x)=M.sup.T(x)+M.sup.A(x)+M.sup.C(x)
If
M.sup.K(X)=M.sup.T(X)+M.sup.C(x)
represents the post-OPC layout transmittance, then the aerial image (AI) intensity is

(49) $I\left(x\right)=\int \left[M^K\left(x_1\right)+M^A\left(x_1\right)\right]\left[M^{K^{*}}\left(x_2\right)+M^{A^{*}}\left(x_2\right)\right]W\left(x-x_1,x-x_2\right)d{x}_{1}d{x}_2=\int \left[M^K\left(x_1\right)M^{K^{*}}\left(x_2\right)+M^A\left(x_1\right)M^{K^{*}}\left(x_2\right)+M^K\left(x_1\right)M^{A^{*}}\left(x_2\right)+M^A\left(x_1\right)M^{A^{*}}\left(x_2\right)\right]W\left(x-x_1,x-x_2\right)d{x}_{1}d{x}_2=I^T\left(x\right)+\int \left[M^A\left(x_1\right)M^{K^{*}}\left(x_2\right)+M^K\left(x_1\right)M^{A^{*}}\left(x_2\right)+M^A\left(x_1\right)M^{A^{*}}\left(x_2\right)\right]W\left(x-x_1,x-x_2\right)d{x}_{1}d{x}_2$
where W(x,y) is the space domain representation of TCC and I.sup.T(x) is the AI intensity without SRAF.

(50) To derive the SGM expression, a unit source at x′ in the SRAF portion of the mask layout is assumed, i.e., M.sup.A(x)=δ(x−x′). This unit source at x′ contributes the following amount to the image slope at x:

(51) $\frac{dI\left(x\right)}{dx}-\frac{d{I}^T\left(x\right)}{dx}=\frac{d}{dx}\int \left[M^A\left(x_1\right)M^{K^{*}}\left(x_2\right)+M^K\left(x_1\right)M^{A^{*}}\left(x_2\right)+M^A\left(x_1\right)M^{A^{*}}\left(x_2\right)\right]W\left(x-x_1,x-x_2\right)d{x}_{1}d{x}_2\frac{d}{dx}\int \left[\delta \left(x_1-x^{\prime }\right)M^{K^{*}}\left(x_2\right)+M^K\left(x_1\right)\delta \left(x-x_2\right)+\delta \left(x-x_1\right)\delta \left(x-x_2\right)\right]W\left(x-x_1,x-x_2\right)d{x}_{1}d{x}_2\frac{d}{dx}\int \left[W\left(x-x^{\prime },x-x_1\right)M^{K^{*}}\left(x_1\right)+M^K\left(x_1\right)W\left(x-x_1,x-x^{\prime }\right)\right]d{x}_{1}d{x}_2+\frac{d}{dx}W\left(x-x^{\prime },x-x^{\prime }\right)$

(52) The weighting of the vote from field point x to source point x′ is equal to the gradient of the pre-OPC image,

(53) $\frac{d{M}^R\left(x\right)}{dx}=\frac{1}{2}\frac{d}{dx}\left[M^T\left(x\right)+M^{T^{*}}\left(x\right)\right]$

(54) So the SGM value at x′ is equal to

(55) $V\left(x^{\prime }\right)=\int \frac{d{M}^R\left(x\right)}{dx}\frac{d\left(I\left(x\right)-I^T\left(x\right)\right)}{dx}dx=\int \frac{d{M}^R\left(x\right)}{dx}\frac{d}{dx}\left\{\int \left[W\left(x-x^{\prime },x-x_1\right)M^{K^{*}}\left(x_1\right)+M^K\left(x_1\right)W\left(x-x_1,x-x^{\prime }\right)\right]d{x}_1\right\}dx+\int \frac{d{M}^R\left(x\right)}{dx}\frac{d}{dx}W\left(x-x^{\prime },x-x^{\prime }\right)dx=-\int M^R\left(x\right)\frac{d^2}{d{x}^2}\left\{\int \left[W\left(x-x^{\prime },x-x_1\right)M^{K^{*}}\left(x_1\right)+M^K\left(x_1\right)W\left(x-x_1,x-x^{\prime }\right)\right]d{x}_1\right\}dx-\int M^R\left(x\right)\frac{d^2}{d{x}^2}W\left(x-x^{\prime },x-x^{\prime }\right)dx$

(56) The last step in the above makes use of integration by parts. This expression does not reduce to the single-kernel SGM expression above even in the limit of coherent illumination because the single-kernel SGM essentially looks at the contribution to the gradient of the amplitude instead of the intensity.

(57) Finally, with a change in variable names:

(58) 0$V\left(x\right)=-\int \left[M^R\left(x_1\right)M^K\left(x_2\right)\frac{d^2}{d{x}_1^2}W\left(x_1-x_2,x_1-x\right)+M^R\left(x_1\right)M^{K^{*}}\left(x_2\right)\frac{d^2}{d{x}_1^2}W\left(x_1-x,x_1-x_2\right)\right]d{x}_{1}d{x}_2-\int M^R\left(x_1\right)\frac{d^2}{d{x}_1^2}W\left(x_1-x,x_1-x\right)d{x}_1=-\int \left[M^R\left(x-x_1\right)M^K\left(x-x_2\right)\frac{d^2}{d{x}_1^2}W\left(x_2-x_1,x_1\right)+M^R\left(x-x_1\right)M^{K^{*}}\left(x-x_2\right)\frac{d^2}{d{x}_1^2}W\left(-x_1,x_2-x_1\right)\right]d{x}_{1}d{x}_2-\int M^R\left(x-x_1\right)\frac{d^2}{d{x}_1^2}W\left(-x_1,-x_1\right)d{x}_1$

(59) The Hermiticity of the SGM bilinear kernel is observed if x.sub.1 is replaced by x.sub.2 in the second term.

(60) When M.sup.T is real and the OPC correction component (M.sup.C) is ignored, then M.sup.R=M.sup.K=M.sup.K*=M.sup.T=M.sup.T* and the above formula resembles the Hopkins equation, which means the SGM may be computed using the standard kernel decomposition technique.

(61) If M.sup.K is real and the OPC correction component (M.sup.C) is not ignored, this is a bilinear integration involving two different input images (pre-OPC mask layout M.sup.R=M.sup.T and post-OPC mask layout without SRAF M.sup.K=M.sup.K*=M.sup.T+M.sup.C).

(62) The SGM bilinear kernel (SGK) can be related to the TCC in the frequency domain. When M.sup.T is real and the OPC correction component (M.sup.C) is ignored,

(63) $\mathrm{SGK}\left(k_1,k_2\right)=-\left[\frac{d^2}{d{\xi }_2}W\left({\xi }_2-{\xi }_1,-{\xi }_1\right)+\frac{d^2}{d{\xi }_2^2}W\left(-{\xi }_2,{\xi }_2-{\xi }_1\right)\right]=-\int \left[\frac{d^2}{d{\xi }_1^2}W\left({\xi }_2-{\xi }_1,-{\xi }_1\right)+\frac{d^2}{d{\xi }_2^2}W\left(-{\xi }_2,{\xi }_2-{\xi }_1\right)\right]\exp \left(-i{k}_1{\xi }_1+i{k}_2{\xi }_2\right)d{\xi }_{1}d{\xi }_2=k_1^2\int W\left({\xi }_2-{\xi }_1,-{\xi }_1\right)\exp \left(\mathrm{–i}{k}_1{\xi }_1+i{k}_2{\xi }_2\right)d{\xi }_{1}d{\xi }_2+k_2^2\int W\left(-{\xi }_2,{\xi }_2-{\xi }_1\right)\exp \left(-i{k}_1{\xi }_1+i{k}_2{\xi }_2\right)d{\xi }_{1}d{\xi }_2{k}_1^2\int W\left({\xi }_1^{\prime },{\xi }_2^{\prime }\right)\exp \left(i{k}_1{\xi }_2^{\prime }+i{k}_2\left({\xi }_1^{\prime }-{\xi }_2^{\prime }\right)\right)d{\xi }_1^{\prime }d{\xi }_2^{\prime }+k_2^2\int W\left({\xi }_1^{\prime },{\xi }_2^{\prime }\right)\exp \left(-i{k}_1\left({\xi }_2^{\prime }-{\xi }_1^{\prime }\right)-i{k}_2{\xi }_1^{\prime }\right)d{\xi }_1^{\prime }d{\xi }_2^{\prime }=k_1^2\mathrm{TCC}\left(-k_2,k_1-k_2\right)+k_2^2\mathrm{TCC}\left(-k_1+k_2,-k_1\right)$

(64) The Hermiticity of the above is readily confirmed.

(65) A practical difficulty is that if this formula is used directly, two raw TCCs appear simultaneously, which may be not feasible if the TCC is large (e.g., if each dimension of the TCC is 107 with float data type, then the total memory requirement exceeds 2G bytes). Therefore, it is desirable to make the computation “in-place.” To do so, the SGM bilinear kernel can be decomposed as
TCC.sub.1(k.sub.1,k.sub.2)=TCC(−k.sub.2,k.sub.1)
TCC.sub.2(k.sub.1,k.sub.2)=k.sub.1.sup.2TCC.sub.1(k.sub.1−k.sub.2,k.sub.2)=k.sub.1.sup.2TCC(−k.sub.2,k.sub.1−k.sub.2)
SGK(k.sub.1,k.sub.2)=TCC.sub.2(k.sub.1,k.sub.2)+TCC.sub.2*(k.sub.2,k.sub.1)
where each step is in-place.

(66) Another practical consideration is that TCC is typically decomposed into convolution kernels, using an eigen-series expansion for computation speed and storage. Therefore, in step 510, a decomposed version of TCC is loaded, and then in step 512 the decomposed version of TCC is re-composed into a raw format. In steps 514-518, the SGM bilinear kernel (SGK(k.sub.1, k.sub.2)) is computed in-place, and then in step 520 the SGM bilinear kernel is decomposed into eigenvalues and eigenvectors. In step 522, a partial SGM is computed using the mask layout, the decomposed SGM bilinear kernel, and existing fast bilinear operations. In the method of FIG. 5 it is assumed that M.sup.R=M.sup.K=M.sup.K*=M.sup.T=M.sup.T*.

(67) In steps 524 and 526, the SGM linear kernel is calculated. The spectrum of the SGM linear term kernel is expressed as:

(68) $\begin{array}{c}{\mathrm{SGK}}_{\mathrm{Linear}}\left(k\right)=-\\ =-\int \left[\frac{d^2}{d{\xi }^2}W\left(-\xi ,-\xi \right)\right]\exp \left(-ik\xi \right)d\xi \\ =k^2\int W\left(-\xi ,-\xi \right)\exp \left(-ik\xi \right)d\xi \\ =k^2\left(-k\right)\end{array}$
where (k) is the Fourier transform of W(ξ,ξ).

(69) W(ξ.sub.1,ξ.sub.2) is also the inverse Fourier transform of TCC(k.sub.1, k.sub.2). Thus,

(70) $\left(k\right)=\frac{1}{2\pi }\int \mathrm{TCC}\left(k_1,k-k_1\right)d{k}_1$

(71) This expression is for the continuous function analysis. However, when a DFT (Discrete Fourier Transform) is used in practice, the constant 2π should be replaced by the sequence length of the DFT. In step 528, another partial SGM is calculated by convolving the mask layout with the SGM linear kernel. In step 530, the partial SGMs are combined to produce the SGM. Note that steps 410-416 in FIG. 4 and steps 510-520 in FIG. 5 can be pre-executed for each optical model to improve run-time speed.

(72) For a new feature to optimize the process window, its placement should be optimized when the edge slope is the weakest. In general, edge slopes are lower at defocus, so the TCC at defocus and/or delta dose should be used to compute the SGM, so that the edge slope is maximized at those weakest PW points.

(73) Different weights can be assigned to different target edge locations in the SGM computation, since different edge points may have different importance. For example, a higher weight can be assigned to the votes by poly-gate edge points, and a lower weight assigned to votes from large patterns and line ends. This weighting approach enables differential treatment for patterns of different importance for process window behavior. An additional consideration in assigning a weight to edge points is the edge's existing slope, such that a higher weight is given to those edge locations that have low edge slope since they are hot spots (i.e., weak points in the layout over process window variation). For this, OPC corrections without SRAFs can be applied to a mask layout, the aerial image computed, and then the aerial image's edge slope at each edge location computed. The inverse of ILS (image log slope) for an edge location can be used as that edge location's weight. These two weighting approaches, i.e., a feature importance-based weight and an ILS-based weight, can also be combined to give a combined weight. Other possible weighting schemes are within the scope of the invention.

(74) To apply weighting in the SGM computation, the relative importance of each edge evaluation point is identified based on, e.g., gate vs. non-gate, line vs. corner, line width, etc. A non-negative weight is then assigned to each edge evaluation point. For example, a weight of 1 is nominal, any value above 1 is additional weight (so, weight 2.0 means the edge point's vote is twice important as nominal-weighted points), any value below 1 is lower weight (i.e., weight 0 means the edge point's vote should not be counted at all and weight 0.5 means the edge point's vote is counted as 50% of nominal-weighted points), and a weight never goes below 0.0. Next, a weight image Wm(x,y) is rendered at the same pixel grid of the pre-OPC layout M(x,y), assuming each weight is a delta function at the edge point location (x,y), and a low-pass filter is applied to the weight image to match the pass-band of the pre-OPC layout's sampling frequency. The final weight map image is multiplied with the gradient of the pre-OPC layout M(x,y) and the result is used as the weighted target image in computing the SGM.

(75) For the single-kernel SGM, the vote map is changed to

(76) $\begin{array}{c}V\left(x,y\right)=\underset{\left(x^{\prime },y^{\prime }\right)}{.Math.}\left[\begin{array}{c}\mathrm{Wm}\left(x^{\prime },y^{\prime }\right)G_x\left(x^{\prime },y^{\prime }\right)D_x\left(x^{\prime }-x,y^{\prime }-y\right)+\\ \mathrm{Wm}\left(x^{\prime },y^{\prime }\right)G_y\left(x^{\prime },y^{\prime }\right)D_y\left(x^{\prime }-x^{\prime },y^{\prime }-y\right)\end{array}\right]\\ =\left[\mathrm{Wm}\left(x,y\right)G_x\left(x,y\right)\right].Math.D_x\left(-x,-y\right)-\\ \left[\mathrm{Wm}\left(x,y\right)G_y\left(x,y\right)\right].Math.D_y\left(-x,-y\right)\\ =-\mathrm{IFFT}\left(\mathrm{FFT}\left({\mathrm{WmG}}_x\right)*\mathrm{IFFT}\left(D_x\right)+\mathrm{FFT}\left({\mathrm{WmG}}_y\right)*\mathrm{IFFT}\left(D_y\right)\right)\\ =-\mathrm{iIFFT}(\left(f_x\mathrm{FFT}\left({\mathrm{WmG}}_x\right)+f_y\mathrm{FFT}\left({\mathrm{WmG}}_y\right)*\mathrm{IFFT}\left(F\right)\right)\end{array}$

(77) For the multi-kernel SGM, the vote map is changed to

(78) $V\left(x^{\prime }\right)=\int \mathrm{Wm}\left(x\right)\frac{d{M}^R\left(x\right)}{dx}\frac{d\left(I\left(x\right)-I^T\left(x\right)\right)}{dx}dx=\int \mathrm{Wm}\left(x\right)\frac{d{M}^R\left(x\right)}{dx}\frac{d}{dx}\left\{\int \left[W\left(x-x^{\prime },x-x_1\right)M^{K^{*}}\left(x_1\right)+M^K\left(x_1\right)W\left(x-x_1,x-x^{\prime }\right)\right]d{x}_1\right\}dx+\int \mathrm{Wm}\left(x\right)\frac{d{M}^R\left(x\right)}{dx}\frac{d}{dx}W\left(x-x^{\prime },x-x^{\prime }\right)dx=-\int \mathrm{Wm}\left(x\right)M^R\left(x\right)\frac{d^2}{d{x}^2}\left\{\int \left[W\left(x-x^{\prime },x-x_1\right)M^{K^{*}}\left(x_1\right)+M^K\left(x_1\right)W\left(x-x_1,x-x^{\prime }\right)\right]d{x}_1\right\}dx-\int \mathrm{Wm}\left(x\right)M^R\left(x\right)\frac{d^2}{d{x}^2}W\left(x-x^{\prime },x-x^{\prime }\right)dx-\int {\mathrm{Wm}}^{\prime }\left(x\right)M^R\left(x\right)\frac{d}{dx}\left\{\int \left[W\left(x-x^{\prime },x-x_1\right)M^{K^{*}}\left(x_1\right)+M^K\left(x_1\right)W\left(x-x_1,x-x^{\prime }\right)\right]d{x}_1\right\}dx-\int {\mathrm{Wm}}^{\prime }\left(x\right)M^R\left(x\right)\frac{d}{dx}\left(x-x^{\prime },x-x^{\prime }\right)dx$

(79) Again, with a change in variables,

(80) $V\left(x\right)=-\int \left[\mathrm{Wm}\left(x_1\right)M^R\left(x_1\right)M^K\left(x_2\right)\frac{d^2}{d{x}_1^2}W\left(x_1-x_2,x_1-x\right)+\mathrm{Wm}\left(x_1\right)M^R\left(x_1\right)M^{K^{*}}\left(x_2\right)\frac{d^2}{d{x}_1^2}W\left(x_1-x,x_1-x_2\right)\right]d{x}_{1}d{x}_2-\int {\mathrm{Wm}}^{\prime }\left(x_1\right)M^R\left(x_1\right)\frac{d^2}{d{x}_1^2}W\left(x_1-x,x_1-x\right)d{x}_1-\int \left[{\mathrm{Wm}}^{\prime }\left(x_1\right)M^R\left(x_1\right)M^K\left(x_2\right)\frac{d}{d{x}_1}W\left(x_1-x_2,x_1-x\right)+{\mathrm{Wm}}^{\prime }\left(x_1\right)M^R\left(x_1\right)M^{K^{*}}\left(x_2\right)\frac{d}{d{x}_1}W\left(x_1-x,x_1-x_2\right)\right]d{x}_{1}d{x}_2-\int {\mathrm{Wm}}^{\prime }\left(x_1\right)M^R\left(x_1\right)\frac{d}{d{x}_1}W\left(x_1-x,x_1-x\right)d{x}_1=-\int \left[\mathrm{Wm}\left(x-x_1\right)M^R\left(x-x_1\right)M^K\left(x-x_2\right)\frac{d^2}{d{x}_1^2}W\left(x_2-x_1,-x_1\right)+\mathrm{Wm}\left(x-x_1\right)M^R\left(x-x_1\right)M^{K^{*}}\left(x-x_2\right)\frac{d^2}{d{x}_1^2}W\left(-x_1,x_2-x_1\right)\right]d{x}_{1}d{x}_2-\int \mathrm{Wm}\left(x-x_1\right)M^R\left(x-x_1\right)\frac{d^2}{d{x}_1^2}W\left(-x_1,-x_1\right)d{x}_1+\int \left[{\mathrm{Wm}}^{\prime }\left(x-x_1\right)M^R\left(x-x_1\right)M^K\left(x-x_2\right)\frac{d}{d{x}_1}W\left(x_2-x_1,-x_1\right)+{\mathrm{Wm}}^{\prime }\left(x-x_1\right)M^R\left(x-x_1\right)M^{K^{*}}\left(x-x_2\right)\frac{d}{d{x}_1}W\left(-x_1,x_2-x_1\right)\right]d{x}_{1}d{x}_2+\int {\mathrm{Wm}}^{\prime }\left(x-x_1\right)M^R\left(x-x_1\right)\frac{d}{d{x}_1}W\left(-x_1,-x_1\right)d{x}_1$

(81) The first three integrations resemble the unweighted SGM with the same kernels. The only difference is that the mask image M.sup.R is replaced by WmM.sup.R. When M.sup.T is real and the OPC correction (M.sup.C) is ignored, the kernel for the fourth and fifth integrations is

(82) ${\mathrm{SGK}}^W\left(k_1,k_2\right)=\left[\frac{d}{d{\xi }_1}W\left({\xi }_2-{\xi }_1,-{\xi }_1\right)+\frac{d^2}{d{\xi }_2}W\left(-{\xi }_2,{\xi }_1-{\xi }_2\right)\right]=\int \left[\frac{d}{d{\xi }_1}W\left({\xi }_2-{\xi }_1,-{\xi }_1\right)+\frac{d}{d{\xi }_2}W\left(-{\xi }_2,{\xi }_1-{\xi }_2\right)\right]\exp \left(-i{k}_1{\xi }_1+i{k}_2{\xi }_2\right)d{\xi }_{1}d{\xi }_2=i{k}_1\int W\left({\xi }_2-{\xi }_1,-{\xi }_1\right)\exp \left(\mathrm{–i}{k}_1{\xi }_1+i{k}_2{\xi }_2\right)d{\xi }_{1}d{\xi }_2-i{k}_2\int W\left(-{\xi }_2,{\xi }_1-{\xi }_2\right)\exp \left(-i{k}_1{\xi }_1+i{k}_2{\xi }_2\right)d{\xi }_{1}d{\xi }_2=i{k}_1\int W\left({\xi }_1^{\prime },{\xi }_2^{\prime }\right)\exp \left(i{k}_1{\xi }_2^{\prime }+i{k}_2\left({\xi }_2^{\prime }-{\xi }_1^{\prime }\right)-i{k}_2{\xi }_1^{\prime }\right)d{\xi }_1^{\prime }d{\xi }_2^{\prime }-i{k}_2\int W\left({\xi }_1^{\prime },{\xi }_2^{\prime }\right)\exp \left(-i{k}_1\left({\xi }_2^{\prime }-{\xi }_1^{\prime }\right)-i{k}_2{\xi }_1^{\prime }\right)d{\xi }_1^{\prime }d{\xi }_2^{\prime }=i{k}_1\mathrm{TCC}\left(-k_2,k_1-k_2\right)-i{k}_2\mathrm{TCC}\left(-k_1+k_2,-k_1\right)$

(83) The kernel for the last integration becomes

(84) $\begin{array}{c}{\mathrm{SGK}}_{\mathrm{Linear}}^W\left(k\right)=\left[\frac{d^2}{d{\xi }^2}W\left(-\xi ,-\xi \right)\right]\\ =\int \left[\frac{d^2}{d{\xi }^2}W\left(-\xi ,-\xi \right)\right]\exp \left(-ik\xi \right)d\xi \\ =-ik\int W\left(-\xi ,-\xi \right)\exp \left(-ik\xi \right)d\xi \\ =-ik\left(-k\right)\end{array}$
where (k) is defined previously.

(85) As discussed above, the SGM (also referred to as LGM herein) can be utilized as a basis for guidance of subsequent patterns to enhance the PW behavior of existing patterns on the layout.

(86) In particular, it is possible to guide the chip design in a sequential way. In each sequential step, a group of new patterns is added into the layout, as chosen by the routing software. The LGM is then computed for all the existing patterns in the layout, the new LGM is then utilized to guide the addition of subsequent features to the layout. In one embodiment, a threshold T is applied to the LGM so that all pixels with LGM values below the threshold are marked as forbidden or undesirable locations for next line or pattern. These forbidden or undesirable locations and Design Rule Checking (DRC) together dictate usable and unusable areas for the next line or pattern. For the usable areas, the bright areas in LGM (i.e., areas with clustered pixels of large LGM values) correspond to areas suitable to accommodate the next line or feature. It is also possible to define an object function, which includes the total LGM covered by the next line or figure, the length of line, and so on, and then maximize (or minimize, depending on the actual definition of the objection function) the object function to solve the optimal locations for the next line or feature to be placed in the mask layout.

(87) For example, if it is desirable to optimize the line placement between points A and B over line width w and path L(A,B), an exemplary cost function can be written as:
(w,(A,B))=αL(L(A,B))+βSUM_LGM(w,(A,B))
where L((A,B)) represents the path length of (A,B), SUM_LGM(w, (A,B)) represents the total LGM value covered by this line (A,B) with width w, α and β are user-specified Lagrange multipliers (weights) for the trade-off between line length and LGM optimization, and they should have different signs. It is assumed that α<0 and β>0. As a result, this line placement problem becomes the optimization problem:
max f(w,(A,B))
subject to the constraints that no point in this path has an LGM value below the threshold T or violates any DRC rules. These constraints can also be added to the object function with a very large negative weight on those points with big adversary impact on PW performance of existing patterns or violating DRC rules.

(88) Alternatively, the LGM may also be used as a (inverse) weight on the route length in line layout, then the problem can be converted to an optimal (weighted) route search problem. Examples of route search algorithms include, but are not limited to, breadth-first search, Dijkstra algorithm, Viterbi algorithm, and Floyd-Warshall algorithm.

(89) Then, as noted above, this process and including the LGM is continuously updated with new patterns until all the lines or features are added to the layout.

(90) Each step of this sequential placement strengthens the overall contrast of already placed patterns/features by employing the LGM as guidance for subsequent pattern placement. Thus, in the resulting layout, patterns are mutually constructive and the overall PW performance can be greatly improved with little extra cost, which is the ultimate goal of DFM methodology. This methodology also has the advantages of low computational cost and taking two-dimensional geometry into consideration.

(91) The LGM can be easily used for multiple layers which need to be considered together simultaneously during layout, for example, poly and diffusion, or metal and contact. For each individual circuit layer, the LGM is computed separately for the layer itself, because lithographical patterning occurs in different time for the different layers. The circuit-level association and dependency between the different layers are to be maintained by the layout software.

(92) Further, the LGM can be utilized to provide guidance to either automated place-and-route software, or to a human user performing manual layout, e.g., of standard cells. In addition to providing suggestions on where the next patterns should be placed, the method can also provide a score based on LGM indicating the level of robustness of the design for lithography.

(93) In addition, the LGL method disclosed herein can be used in combination with OPC and OPC verification software, to validate the robustness of the design.

(94) Further, the application of LGL can be used in either the placement or the routing stage of IC circuit layout, or both. Specifically, the LGL method can be applied to provide guidance to the placement of pre-defined standard cells, to enhance lithographic performance. In this application, the entire pre-defined standard cell is treated as a single fixed figure, and the LGM will give the score of the placement by summing up all the LGM pixel values covered by the standard cell. LGM can also evaluate whether there are any particular weak points in a placement by finding the lowest LGM values covered by the standard cell.

(95) For the design of a standard cell which is likely to be spatially repeated multiple times, the LGM can be used not only to guide the layout of the cell itself, but also to compute a favored pitch for the cell in the lithography sense. A design having a smaller favored pitch will be able to provide smaller circuit area, which can be significant if the cell is repeated many times.

(96) In one embodiment, an SGM can be used to create a set of SRAF placement rules. An example of a set of SRAF placement rules is shown below in Table 1. Column 1 identifies the type of pattern, where type 1 is an SRAF-favored pattern like a gate, and type 2 is an SRAF-non-favored pattern like a metal line. Column 2 identifies the space between the main features in the layout. There are three kinds of SRAF placement rules shown in Table 1. The first kind of rule (columns 3-6) is for placing SRAFs (i.e., scattering bars or SB) between the same type of patterns. The second kind of rule (columns 7-10) is for placing SRAFs between an SRAF-favored pattern and an SRAF-non-favored pattern. The third kind of rule (columns 11-14) is for placing SRAFs between an SRAF-favored or SRAF-disfavored pattern and a no-SRAF pattern (e.g., very large patterns). For contact layers, all three of kinds of rules may be the same. Each row of Table 1 specifies the number of SRAFs to be placed, the width of each SRAF, the space between the SRAF and the main feature, and the space between the SRAFs according to the space between the main features. For poly (metal) layer, the SRAF placement rules are created using the SGM and a series of one-dimensional test features.

(97) TABLE-US-00001 TABLE 1 SB Cp cpSB Cp2 Cp2AF Type Space # Width SP1 SP2 # width cpSP1 cpSP2 # width Cp2SP1 CpSP2 1 330 1 40 0 0 0 0 0 0 0 0 0 0 1 500 2 40 145 0 0 0 0 0 2 40 145 120 1 650 3 40 145 0 0 0 0 0 2 40 145 120 1 820 4 40 145 120 0 0 0 0 0 0 0 0 2 330 1 40 0 0 0 0 0 0 0 0 0 0 2 500 2 40 145 0 0 0 0 0 2 40 145 120 2 650 3 40 145 0 0 0 0 0 2 40 145 120 2 820 4 40 145 120 0 0 0 0 0 0 0 0

(98) FIG. 6A is a diagram of one embodiment of test features and a coordinate system for generating SRAF placement rules for poly (metal) layer using an SGM, according to the invention. For a specified space between main features, a test pattern composed of repetitive line test features is created, in which both the line test features and SRAFs are assumed to have infinite length as compared to their width. FIG. 6A shows two line test features 610a and 610b that are of the same type, e.g., both features are gates. Thus the following discussion describes generating the first kind of SRAF placement rules. The width of the line test features equals the most important line width of the layout and the space between any two neighboring line test features is the specified space value between main features. An SGM is then generated for this test pattern.

(99) As shown in FIG. 6A, a coordinate system is imposed on the test patterns, where the y-axis coincides with the boundary of an arbitrary line test feature and the x-axis is perpendicular to the line test features. In FIG. 6A, x=0 (612) and x=space (614) correspond to the boundaries of neighboring line test features 610a and 610b. For the one-dimensional rule, the SGM value between any two neighboring line patterns S(x) is equal to SGM (x,0) and x=[0, 1, . . . space]. The SRAF placement rule generation problem for these line test features is then transformed into the problem of partitioning the interval [0, space] into n smaller intervals [x.sub.1s, x.sub.1e], [x.sub.2s, x.sub.2e], . . . [x.sub.ns, x.sub.ne], where 0≦x.sub.1s<x.sub.1e<x.sub.2e<x.sub.ns . . . <x.sub.ns<x.sub.ne≦space. Each interval represents an SRAF such that the i-th SRAF (1≦i≦n) can be described as x.sub.is≦x≦x.sub.ie.

(100) Determining the optimal SRAF placement rule is equivalent to maximizing the total SGM value covered by SRAFs subject to MRC rules and SRAF printability constraints. Let S.sub.i be the SGM value covered by the i-th SRAF (1≦i≦n), then the total SGM value covered by SRAFs is

(101) $\underset{i=1}{\overset{n}{.Math.}}{S}_i=\underset{i=1}{\overset{n}{.Math.}}\underset{x=x_{\mathrm{is}}}{\overset{x_{\mathrm{ie}}}{.Math.}}S\left(x\right)$

(102) There are five constraints on placing SRAFs in a layout:

(103) 1. minimum SRAF width (W.sub.min), i.e., for any iε{1, 2, . . . , n}, x.sub.ie−x.sub.is≧W.sub.min

(104) 2. maximum SRAF width (W.sub.max), i.e., for any iε{1, 2, . . . , n}, x.sub.ie−x.sub.is≧W.sub.min

(105) 3. minimum spacing between SRAF and main feature (S.sub.main), i.e., x.sub.1s≧S.sub.main and x.sub.ne≦space−S.sub.main

(106) 4. minimum spacing between any two neighboring SRAFs (S.sub.SRAF), i.e., for any iε{2, . . . , n}, x.sub.is−x.sub.(i-1)e≧S.sub.SRAF

(107) 5. for any iε{1, 2, . . . , n}, S.sub.i≧0 (There is no need to place SRAFs with negative SGM value, even if its value is the largest possible).

(108) Assuming the global optimal solution (partition) for [0,space] with constraints W.sub.min, W.sub.max, S.sub.main, S.sub.SRAF) is Rule.sub.opt={[x.sub.1s, x.sub.1e], [x.sub.2s, x.sub.2e], . . . [x.sub.ns, x.sub.ne]}, then the i-th SRAF (1≦≦n) covers [x.sub.is, x.sub.ie]. What is more, for any iε{2, . . . , n}, {[x.sub.1s, x.sub.1e], [x.sub.2s, x.sub.2e], . . . [x.sub.(i-1)s, x.sub.(i-1)e]} is also the optimal partition for [0, x.sub.is−S.sub.SRAF], with the same constraints (otherwise, if there exists a better partition for [0, x.sub.is, −S.sub.SRAF], then it can be combined with the i, i+1, . . . , n-th SRAF placement in Rule.sub.opt and land at a rule that is better than Rule.sub.opt and still satisfies the constraints, which contradicts the optimality of Rule.sub.opt).

(109) Thus, the interval [0,space] is divided into smaller intervals and an algorithm is constructed based on dynamic programming. The summary of this algorithm follows, assuming space ≧2S.sub.main+W.sub.min:

(110) INPUT: space, S(X) for x=[0, 1, . . . , space], and constraints (W.sub.min, W.sub.max, S.sub.main, S.sub.SRAF)

(111) TABLE-US-00002 INTERMEDIATE RESULTS: NumSRAFArray[x] (x=[0, 1, . . . , space−S.sub.main]): an array which has a size of space−S.sub.main + 1 and NumSRAFArray[x] stores the number of SRAFs of the optimal partition for [0,x] SRAFSGMArray[x] (x=[0, 1, . . . , space−S.sub.main]): an array which has a size of space−S.sub.main + 1 and SRAFSGMArray[x] stores the total SGM covered by SRAFs of the optimal partition for [0,x] SRAFLeftEndArray[x] (x=[0, 1, . . . , space−S.sub.main]): an array which has a size of space−S.sub.main + 1 and SRAFLeftEndArray[x] stores the coordinate of the right most SRAF's left end of the optimal partition for [0,x] (corresponds to the largest x.sub.is such that x.sub.ie ≦ x) SRAFRightEndArray[x] (x[0, 1, . . . , space−S.sub.main]): an array which has a size of space−S.sub.main + 1 and SRAFLeftEndArray[x] stores the coordinate of the right most SRAF's right end of the optimal partition for [0,x] (corresponds to the largest x.sub.ie such that x.sub.ie ≦ x). INITIALIZATION: Set NumSRAFArray[x] and SRAFSGMArray[x] to zero for all x=[0,1, . . . , space−S.sub.main]. SRAF COMPUTATION: For I = S.sub.min+W.sub.min to space−S.sub.main STE P =1  //For Constraint 3  tempSGMValue←SRAFSGMArray[i−1]  tempNumSRAF←NumSRAFArray[i−1]  tempSRAFLeftEnd←SRAFLeftEndArray[i−1]  tempSRAFRightEnd←SRAFRightEndArray[i−1]  0$\mathrm{tempNewSRAFSGM}\leftarrow \underset{k=i-W_{\min }}{\overset{i}{.Math.}}S\left(k\right)//\mathrm{Candidate}{\mathrm{SRAF}}^{\text{'}}s\mathrm{SGM}$  value  for j = i−Wmin to max {i−W.sub.max, S.sub.main): STEP= −1  //j: Candidate SRAF's left end.  //The width of each SRAF is guaranteed to fall in [W.sub.min, W.sub.max]   if(tempNewSRAFSGM ≧ 0)    //For Constraint 5   h← j−S.sub.SRAF   if (h ≧ S.sub.main + W.sub.min)    PreviousSGMValue←SRAFSGMArray[h]    PreviousNumSRAF← NumSRAFArray[h]    //Optimal partition for [0, j−S.sub.SRAF]   else    PreviousSGMValue← 0    PreviousNumSRAF← 0   End   if(tempNewSRAFSGM+PreviousSGMValue>tempSGMValue)    tempSGMValue← tempNewSRAFSGM+PreviousSGMValue    tempNumSRAF← PreviousNumSRAF+ 1    tempSRAFLeftEnd← j    tempSRAFRightEnd← i   End  End  tempNewSRAFSGM ← tempNewSRAFSGM+S(j−1) End SRAFSGMArray[i] ← tempSGMValue NumSRAFArray[i] ← tempNumSRAF SRAFLeftEndArray[i] ← tempSRAFLeftEnd SRAFRightEndArray[i] ← tempSRAFRightEnd //Update all intermediate results End OUTPUT: NumSRAFArray[space−S.sub.SRAF], SRAFLeftEndArray[x] (x=[0, 1, . . . , space−SRAF]), and SRAFRightEndArray[x] (x=[0, 1, . . . , space−SRAF])

(112) FIG. 6B is a diagram of one embodiment of contact test features and a coordinate system for generating SRAF placement rules using an SGM, according to the invention. The contact test features 620a and 620b are repetitive square features. Since the significance of each contact test feature 620a, 620b is identical, the following discussion describes generating the first kind of SRAF placement rules. The space between any two neighboring contacts is the specified space between main features. An SGM is generated for this test pattern. A coordinate system is imposed on the contact test features, where the y-axis coincides with the boundary of an arbitrary contact test feature, the origin is located at the middle of that edge of the contact test feature. In FIG. 6B, x=0 (622) and x=space (624) correspond to the boundaries of neighboring contact test features 620a and 620b.

(113) For a contact layer, the length of a main feature is typically the same as the width, thus two-dimensional effects caused by the finite length of the feature are considered. For SRAFs placed in a contact layer, the SRAF length is specified by a parameter “sbEndExtension” 626. If the length of contact test features 620a, 620b is L, then the length of an SRAF 628 is L+2*sbEndExtension. Since only the SGM value covered by SRAFs is of interest, the SGM value function S(x) is redefined as:

(114) $S\left(x\right)=\underset{y=L/2-\mathrm{sbEndExtension}}{\overset{L/2+\mathrm{sbEndExtension}}{.Math.}}\mathrm{SGM}\left(x,y\right)\mathrm{for}x=\left[0,1,\mathrm{.Math.},\mathrm{space}\right]$

(115) Determining the first type of SRAF placement rules for contacts is the same as described above for line features, except for the different definition of S(x).

(116) Determining the second kind of SRAF placement rules (i.e., rules for placing SRAFs between SRAF-favored patterns and SRAF-non-favored patterns) is similar to determining the first kind of SRAF placement rules except that different weights are assigned to neighboring patterns. For example, an edge of an SRAF-favored pattern will be assigned a higher weight than an edge of an SRAF-non-favored pattern.

(117) FIG. 6C is a diagram of one embodiment of test features and a coordinate system for generating SRAF placement rules using an SGM, according to the invention. The test features of FIG. 6C are used to determine the third kind of SRAF placement rules (i.e., rules for placing SRAFs between an SRAF-favored feature or SRAF-non-favored feature and a no-SRAF feature). A central line test feature 632 has width of the most important line width in the design layout and line test features 630a and 630b (no-SRAF features) are assumed to be infinitely wide. The SRAF placement rules are determined as described above in conjunction with FIG. 6A, except that line test feature 632 is assigned a large weight, and line test features 630a, 630b are assigned a very small weight.

(118) After SRAFs are placed according to the placement rules, the placement, width, and length of each SRAF can be fine-tuned using the SGM to account for the 2D effects of the mask layout. For poly (metal) layer, the SRAF placement rule is generated with the assumption that the main features' length is much larger than their width. However, this assumption is not always valid. For example, for areas near line-ends, the SGM may indicate that a placed SRAF should be slightly wider than the width dictated by the rule. This SRAF may then be thickened. The SGM value covered by each SRAF can also be used as the SRAF's priority to resolve potential conflicts. For example, if SRAFs from different main feature segments overlap, the SRAF with lower priority is modified first to remove the overlap.

(119) FIG. 7 is a flowchart of method steps for rule-free placement of SRAFs using an SGM, according to one embodiment of the invention. In the FIG. 7 embodiment, SRAFs are derived directly from the SGM, instead of first generating SRAF placement rules. In this embodiment, regions of the SGM are converted into SRAF polygons. Each SRAF polygon is required to be a thin bar shape, to be oriented either horizontally or vertically, and to have a width within the range [W.sub.min, W.sub.max].

(120) In step 710, the SGM is thresholded to identify the positive regions, i.e., the regions where SRAFs are desired. The thresholding produces a binary image, SGMB. In step 712, standard image processing methods are used to identify connected positive regions within the SGMB. In step 714, the SBM is multiplied by the SGMB to produce SGMC, such that each positive pixel of the SGMB is assigned its corresponding value in the SGM. In step 716, one-dimensional x- and y-projections of the SGMC are computed for each connected region. In step 718, all of the SRAF coordinates (i.e., locations where all SRAFs should be placed) are extracted by applying the above-described dynamic programming approach for rule generation to the one-dimensional projections. In step 720, any conflicts between placing SRAFs are resolved using the total SGM value covered by each SRAF as its priority. Possible conflicts between placing SRAFs include the minimum allowed end-to-end distance between SRAFs and the minimum allowed corner-to-corner distance between SRAFs. In step 722, the SRAFs are placed in the layout.

(121) FIG. 8 is a flowchart of method steps for integrating model-based SRAF generation with applying OPC corrections, according to one embodiment of the invention. Typically, OPC correction image data (M.sup.C) is quite small compared to the pre-OPC mask image data (M.sup.T), so the post-OPC mask image M.sup.K(x)=M.sup.T(x)+M.sup.C (x)≈M.sup.T (x) and the SGM only depends on the pre-OPC layout. Thus the SGM can be generated and SRAFs placed in the layout before OPC corrections are applied. However, if the OPC corrections cannot be ignored, the SGM generation and SRAF placement can be integrated with the application of OPC corrections.

(122) In step 810, the SGM is first generated using the design (pre-OPC) layout and SRAFs are placed in the design layout using either placement rules generated using the SGM or directly from the SGM, as described above. In step 812, OPC, mask rule check (MRC), and SRAF printability corrections are applied to the design layout with the SRAFs. In step 814, a new SGM is generated using the post-OPC layout and/or the SRAFs are replaced in the post-OPC layout. Regenerating the SGM in step 814 is optional. In step 816, if the termination condition is satisfied, the method ends, but if the termination condition is not satisfied, the method returns to step 812 where another iteration of the OPC, MRC, and SRAF printability corrections is applied. The termination condition can be a maximum iteration number or a determination of whether a simulated resist image contour is sufficiently close to the design target.

(123) Adjusting the placement of SRAFs after each iteration of OPC and other corrections can be quite efficient. For example, after one iteration of OPC corrections, certain SRAFs may not be placed in accordance with the SGM because of MRC constraints such not being as wide as desired or not being able to be placed at all. However, after another iteration of OPC corrections, there may be room for these SRAFs to be placed.

(124) FIG. 9 is a diagram showing a design target layout with SRAFs that were placed according to prior art SRAF placement rules. FIG. 9 also shows simulated resist contours for the post-OPC layout. The critical dimension (i.e., line width) measured at hot spot 910 is 49.6 nm, at hot spot 912 the critical dimension is 40 nm, at hot spot 914 the critical dimension is 44 nm, at hot spot 916 the critical dimension is 29.3 nm, and at hot spot 918 the critical dimension is 35.5 nm. Hot spot 916 especially shows what is known as “necking,” where the simulated resist contour is much narrower than the designed-for line width.

(125) FIG. 10 is a diagram showing the same design target layout with SRAFs that were placed according to SRAF placement rules created using an SGM. FIG. 10 also shows simulated resist contours for this post-OPC layout. The critical dimension measured at hot spot 1010 is 49.77 nm, at hot spot 1012 the critical dimension is 47.44 nm, at hot spot 1014 the critical dimension is 44.75 nm, at hot spot 1016 the critical dimension is 41.24 nm, and at hot spot 1018 the critical dimension is 40.72 nm. As seen in comparing the measured critical dimensions in FIG. 9 and FIG. 10, the post-OPC layout having SRAFs placed using the SGM results in simulated resist contours that better match the layout and improved critical dimensions at hot spots.

(126) The SGM may be used in other applications other than placing SRAFs. The SGM may be used to identify hot spots in the pre-OPC (design target) layout. If a main feature resides in an area that has a very low SGM value computed without this feature, the feature will adversely affect the process window of the edges of neighboring patterns and the overall process window robustness of the design. The SGM may also be used to repair hot spots by shifting the hot spots to an area with a higher SGM value. The SGM may be used in a double exposure design, where the full chip design is separated into two groups of patterns that are exposed in sequence. In separating all the patterns into two groups, some patterns are ambiguous, i.e., the pattern does not violate any rule if it is placed in either group. For such patterns, the SGM may be used to decide in which group the pattern should be placed by selecting the layout with the higher SGM value. The SGM may also be used to determine overall bias rules for a layout, i.e., how much a pattern should enlarge or shrink.

ADDITIONAL DESCRIPTIONS OF CERTAIN ASPECTS OF THE INVENTION

(127) Certain embodiments of the invention provide systems and methods for placing sub-resolution assist features in a mask layout. Some of these embodiments comprise generating an SRAF guidance map for the mask layout, wherein the SRAF guidance map is an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature and placing sub-resolution assist features in the mask layout according to the SRAF guidance map. In some of these embodiments, generating an SRAF guidance map comprises computing an image gradient map of the mask layout, for each field point in the mask layout, computing a total vote sum for a unit source at the field point using the image gradient map and assigning values in the SRAF guidance map, wherein the value at a pixel in the SRAF guidance map is the total vote sum at a corresponding field point in the mask layout. In some of these embodiments, computing a total vote sum for a unit source at the field point is performed in the frequency domain and includes computing the inverse Fourier Transform of a most significant eigenvector of transmission cross-coefficients that represent the optical path of an exposure tool, computing the Fourier Transform of the mask layout, multiplying the inverse Fourier Transform by the sum square of frequency and the Fourier Transform of the mask layout to produce a product, and computing the inverse Fourier Transform of the product to produce the SRAF guidance map. In some of these embodiments, wherein generating an SRAF guidance map comprises computing a bilinear SRAF guidance map kernel using the transmission cross-coefficients that represent the optical path of an exposure tool, computing a linear SRAF guidance map kernel using the transmission cross-coefficients, computing a partial SRAF guidance map using the bilinear SRAF guidance map kernel and the mask layout, computing a second partial SRAF guidance map using the linear SRAF guidance map kernel and the mask layout, and combining the partial SRAF guidance map and the second partial SRAF guidance map. In some of these embodiments, the methods and systems may comprise generating SRAF placement rules using the SRAF guidance map. In some of these embodiments, the mask layout includes optical proximity corrections. In some of these embodiments, the methods may be stored on a computer-readable medium as instructions for execution on a computing device.

(128) Some of these embodiments further comprise or generate mask layout data including sub-resolution assist features, wherein the sub-resolution assist features were placed according to an SRAF guidance map, wherein the SRAF guidance map is an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature. In some of these embodiments, the SRAF guidance map was generated by computing the inverse Fourier Transform of a most significant eigenvector of transmission cross coefficients that represent the optical path of an exposure tool, computing the Fourier Transform of the mask layout, multiplying the inverse Fourier Transform by the sum square of frequency and the Fourier Transform of the mask layout to produce a product, and computing the inverse Fourier Transform of the product to produce the SRAF guidance map. In some of these embodiments, the initial mask layout includes optical proximity corrections. In some of these embodiments, the SRAF guidance map was generated by computing a bilinear SRAF guidance map kernel using the transmission cross-coefficients that represent the optical path of an exposure tool, computing a linear SRAF guidance map kernel using the transmission cross-coefficients, computing a partial SRAF guidance map using the bilinear SRAF guidance map kernel and the mask layout, computing a second partial SRAF guidance map using the linear SRAF guidance map kernel and the mask layout and combining the partial SRAF guidance map and the second partial SRAF guidance map. In some of these embodiments, the initial mask layout includes optical proximity corrections.

(129) Some of these embodiments further comprise or generate a mask having a mask layout that includes sub-resolution assist features, wherein the sub-resolution assist features were placed according to an SRAF guidance map, wherein the SRAF guidance map is an image in which each pixel value indicates whether the pixel would contribute positively to through-focus and through-dose edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature. In some of these embodiments, the SRAF guidance map was generated by computing the inverse Fourier Transform of a most significant eigenvector of transmission cross-coefficients that represent the optical path of an exposure tool, computing the Fourier Transform of the mask layout, multiplying the inverse Fourier Transform by the sum square of frequency and the Fourier Transform of the mask layout to produce a product, and computing the inverse Fourier Transform of the product to produce the SRAF guidance map. In some of these embodiments, the initial mask layout includes optical proximity corrections. In some of these embodiments, the SRAF guidance map was generated by computing a bilinear SRAF guidance map kernel using the transmission cross-coefficients that represent the optical path of an exposure tool, computing a linear SRAF guidance map kernel using the transmission cross-coefficients, computing a partial SRAF guidance map using the bilinear SRAF guidance map kernel and the mask layout, computing a second partial SRAF guidance map using the linear SRAF guidance map kernel and the mask layout, and combining the partial SRAF guidance map and the second partial SRAF guidance map. In some of these embodiments, the initial mask layout includes optical proximity corrections.

(130) Certain embodiments of the invention, including certain of the latter embodiments, provide systems and methods for determining location of one or more features within a mask layout, comprising placing a first feature in the mask layout, performing a mask simulation based on the placement of the first feature, wherein performing the mask simulation includes generating an SRAF guidance map and determining a location for placing a second feature in the mask layout based on results obtained from the simulation. Some of these embodiments further comprise placing the second feature at the determined location and iteratively repeating the steps of performing a mask simulation based on previously placed features, determining the location for placing another feature within the mask layout and placing the another feature until a desired number of features has been placed in the mask design. Some of these embodiments further comprise optimizing the mask layout using OPC. Some of these embodiments further comprise optimizing the mask layout using resolution enhancement techniques. Some of these embodiments further comprise a plurality of layout guidance maps, wherein each layout guidance map is representative of simulated imaging performance of a mask layout. In some of these embodiments, each LGM comprises a two-dimensional image including a plurality of pixel values, the placement of a feature is calculated based on one or more of the pixel values. In some of these embodiments, each of the pixel values is indicative of the effect on printability of one or more patterns in the mask layout of a portion of the feature placed on the pixel. In some of these embodiments, the effect on printability is a negative effect. In some of these embodiments, the portion of the feature placed on the pixel enhances printability of the one or more patterns.

(131) The invention has been described above with reference to specific embodiments. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit and scope of the invention as set forth in the appended claims. The foregoing description and drawings are, accordingly, to be regarded in an illustrative rather than a restrictive sense.