SUPERLATTICE ABSORBER FOR DETECTOR

Abstract

A superlattice absorber for a detector is provided. The superlattice absorber includes a plurality of material periods deposited successively. Each of the material periods includes a first layer of InAs, InGaAs, InAsSb or InGaAsSb; and a plurality of second layers of InGaAsSb. The second layers comprise at least two InGaAsSb layers with at least two different content combinations. The content of the second layers is different from that of the first layer.

Claims

1. A superlattice absorber for a detector, the superlattice absorber comprising a plurality of material periods deposited successively, each of the material periods comprising: a first layer of InAs, InGaAs, InAsSb or InGaAsSb; and a plurality of second layers of InGaAsSb, wherein the second layers comprise at least two InGaAsSb layers with at least two different content combinations, and the content of the second layers is different from that of the first layer.

2. The superlattice absorber according to claim 1, wherein the second layers with different content combinations comprise different Indium contents and/or Arsenic contents from each other.

3. The superlattice absorber according to claim 1, wherein the second layers have a flexible growth sequence to satisfy certain property requirements.

4. The superlattice absorber according to claim 3, wherein the second layers comprise a structure of InAs/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1 or InAs/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2.

5. The superlattice absorber according to claim 3, wherein the second layers comprise a structure of InAs/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2 with two content combinations and four layers.

6. The superlattice absorber according to claim 1, wherein a thickness of each of the first layer and the second layers is in a range of 0-20 nm so that the first layer and the second layers are coupled effectively to create miniband.

7. The superlattice absorber according to claim 1, wherein the second layers can be graded in a sub monolayer level so that the contents of the second layers are controlled at the sub monolayer level.

8. The superlattice absorber according to claim 1, wherein each of the material periods further comprises an interface between the first layer and the plurality of second layers, and the interface is configured to be InSb-like, GaAs-like or mixed to make strain compensation to the superlattice absorber.

9. The superlattice absorber according to claim 1, wherein each of the second layers has 1-70 In.sub.xGa.sub.1-xAs.sub.ySb.sub.1-y monolayers.

10. The superlattice absorber according to claim 1, wherein the superlattice absorber is doped to n-type conductivity, p-type conductivity, or partly n-type conductivity and partly p-type conductivity.

11. An infrared, PIN, or unipolar detector comprising the superlattice absorber according to claim 1.

12. The detector according to claim 11, further comprising a substrate of GaSb or InAs.

13. The detector according to claim 11, further comprising a barrier layer, an etch stop layer, and/or contact layers.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The benefits of this application will be further understood by various examples, results of calculation data, figures together with details of the application as following.

[0021] FIG. 1 illustrates a typical device structure of a Type II superlattice structure.

[0022] FIG. 2 illustrates the band alignment of one example of InAs/GaSb superlattice with InSb interface together with the envelope functions of electron and hole. FIG. 2 also illustrates the E(k∥) dispersion of electrons and holes (right).

[0023] FIG. 3 illustrates composition dependence of the band alignments for the alloy In.sub.xGa.sub.1-xAs.sub.ySb.sub.1-y lattice matched to GaSb with respect to the composition x and the composition y. The solid (thick) and dashed (thin) lines represent the calculated Valence Band Maximum (VBM) and Conduction Band Minimum (CBM) energy levels, respectively.

[0024] FIG. 4 illustrates the band alignment of one example InAs/InGaAsSb superlattice with InSb interface together with the envelope functions of electron and hole. FIG. 4 also illustrates the E(k∥) dispersion of electrons and holes (right). Herein, the InGaAsSb content is constant in one period of the superlattice.

[0025] FIG. 5 illustrates the band alignment of another InAs/InGaAsSb superlattice with InSb interface together with the envelope functions of electron and hole. FIG. 5 also illustrates the E(k∥) dispersion of electrons and holes (right). Herein, the InGaAsSb part has two layers with different bandgaps.

[0026] FIG. 6 illustrates the band alignment of still another InAs/InGaAsSb superlattice with InSb interface together with the envelope functions of electron and hole. FIG. 6 also illustrates the E(k∥) dispersion of electrons and holes (right). Herein, the InGaAsSb part has two layers with different bandgaps. The designed miniband targets middle wavelength (3-5 μm) detection.

[0027] FIG. 7 illustrates the band alignment of still another InAs/InGaAsSb superlattice with InSb interface together with the envelope functions of electron and hole. FIG. 7 also illustrates the E(k∥) dispersion of electrons and holes (right). Herein, the InGaAsSb part has three layers but two bandgaps. That is, one of the three layers has a content, and the other two layers have another content. The designed miniband targets long wavelength (8-14 μm) detection.

[0028] FIG. 8 illustrates the band alignment of still another InAs/InGaAsSb superlattice with InSb interface together with the envelope functions of electron and hole. FIG. 8 also illustrates the E(k∥) dispersion of electrons and holes (right). Herein, the InGaAsSb part has three layers but two bandgaps. The designed miniband targets long wavelength (8-14 μm) detection. It has the same period thickness as the structure illustrated in FIG. 7 but different content. The detection wavelength is longer than the structure illustrated FIG. 7.

[0029] FIG. 9 illustrates the band alignment of still another InAs/InGaAsSb superlattice with InSb interface together with the envelope functions of electron and hole. FIG. 9 also illustrates the E(k∥) dispersion of electrons and holes (right). Herein, the InGaAsSb part has three layers but two bandgaps. The designed miniband targets very long wavelength detection. It has the same period thickness as the structure illustrated in FIG. 8 but different content. The detection wavelength is longer than the structure illustrated FIG. 8.

[0030] FIG. 10 illustrates the band alignment of still another InAs/InGaAsSb superlattice with InSb interface together with the envelope functions of electron and hole. FIG. 10 also illustrates the E(k∥) dispersion of electrons and holes (right). Herein, the InGaAsSb part has three layers but two bandgaps. It has the same period thickness as the structure illustrated in FIG. 8 but different content. The bandgap of the miniband has disappeared, so it reaches the semimetal range.

[0031] FIG. 11 illustrates the band alignment of still another InAs/InGaAsSb superlattice with InSb interface together with the envelope functions of electron and hole. FIG. 11 also illustrates the E(k∥) dispersion of electrons and holes (right). Herein, the InGaAsSb part has three layers but two bandgaps. The designed miniband targets long wavelength (8-14 μm) detection. The alignment is different from the structure illustrated in FIG. 7 but has a similar detection bandgap of the miniband.

[0032] FIG. 12 illustrates an XRD rocking curve in a wide range of an InGaAsSb layer grown by MBE which shows there is no phase separation.

[0033] FIG. 13 illustrates an XRD rocking curve in a wide range of another InGaAsSb layer grown by MBE which shows there is no phase separation and different lattice constant from the layer illustrated in FIG. 12.

[0034] FIG. 14 illustrates an XRD rocking curve in a narrow range of the InGaAsSb layer same as the layer illustrated in FIG. 13. The high resolution scan shows fringes indicating a high quality of the epitaxy layer.

[0035] FIG. 15 illustrates an XRD rocking curve of a GaSb/InGaAsSb structure comprising 10 ML GaSb and 2 ML InGaAsSb. The clear satellite peak shows the high quality superlattice growth.

[0036] FIG. 16 illustrates an XRD rocking curve of an InAs/InGaAsSb structure comprising 13 ML GaSb and 7 ML InGaAsSb. The clear satellite peak shows the high quality superlattice growth.

[0037] FIG. 17 illustrates two photoluminescence spectrums measured at 77k. The one having a peak at 7.7 μm was taken with a sample with no graded InGaAsSb layer of a InAs/InGaAsSb superlattice. And, the one having a peak at 9 μm was taken with a sample with graded InGaAsSb layer of a InAs/InGaAsSb superlattice

[0038] The figures will be described in details in the following detailed of description of the invention.

DETAILED DESCRIPTION

[0039] Type II broken bandgap detector was predicted to have more superior performance than MCT and InSb detector. The Valence Band Maximum (VBM) energy level of GaSb is higher than the Conduction Band Minimum (CBM) energy level of InAs which is called ‘broken bandgap’ alignment. The band gap of miniband depends on the thickness of those two layers. In the case of InGaSb/InAs, it also depends on the indium content, while the indium content also changes the lattice constant. Additional effort needs to be made for the strain compensation. FIG. 1 illustrates a typical structure of a type II detector. The absorber material is InAs/GaSb superlattice. FIG. 2 shows the bandgap alignment of the InAs (13 ML)/GaSb (7 ML) superlattice with InSb interface and the envelope functions of electron and hole. The electron and hole are mainly separate in InAs layer and GaSb layer. The opto-eclectic transition is separated in space. FIG. 2 (right) shows the E(k∥) dispersion of this superlattice. The mini bandgap is about 0.12 eV which has a cut off wavelength of about 10 μm.

[0040] FIG. 3 shows that the In.sub.xGa.sub.1-xAs.sub.ySb.sub.1-y VBM and CBM change with respect to gallium content and Arsenic content but keep the lattice constant matching to GaSb. It can be seen that the InGaAsSb can have also broken bandgap alignment with InAs, InGaAs or InAsSb when the Gallium content is about higher than 20%. So, InGaAsSb/In(Ga)As superlattice can reach long wavelength detection with short superlattice period. A short superlattice period provides high quantum efficiency.

[0041] Due to the narrow bandgap nature of InGaAsSb, the Gallium content can be further reduced to reach a long wavelength range as indicated in FIG. 4. The Gallium related minority carrier lifetime problem is then reduced.

[0042] Due to the adjustable bandgap, a structure with graded bandgap InGaAsSb in the InGaAsSb part can be designed. For example, the InGaAsSb has two contents and then two bandgap layers in the structure illustrated in FIG. 5. Each layer has 3 monolayers (with the same content) and the bandgap is graded by about 0.2 eV. With a bandgap graded InGaAsSb layer in each period of the superlattice, the envelope function of electron penetrates much more to the InGaAsSb layer. Then, the envelope functions of electron and hole have more overlap so that this structure has higher quantum efficiency than the traditional InAs/GaSb structure.

[0043] In another embodiment illustrated in FIG. 6, the bandgap of the graded InGaAsSb part can be configurated so that the superlattice can reach middle wavelength infrared detection.

[0044] In the embodiments illustrated in FIG. 7 and FIG. 11, the InGaAsSb layer has three graded layers with two bandgaps. The detection wavelengths of these two structures are similar with the structure illustrate in FIG. 4 and FIG. 5, but the VBM and CBM position are different. Recent research shows the defect level in Type II superlattice absorber locates at a certain point in the forbidden miniband. With a graded InGaAsSb layer, it is possible to adjust the forbidden miniband position against the defect level to reduce the defect related recombination. Thus, the minority carrier lifetime is increased.

[0045] In traditional InAs/GaSb detector, the detection wavelength can be extended by changing the layer thickness of InAs and/or GaSb. Thus, the period thickness is also changed. Further effort needs to be paid to make strain balancing. Normally, the period thickness needs to be increased to get a longer detection wavelength so that the quantum efficiency is reduced. In the embodiment illustrated in FIGS. 8, 9 and 10 of this application, a longer detection wavelength and even semimetal range can be reached without changing the period thickness but the graded band alignment of the InGaAsSb layer.

[0046] The above embodiments illustrated in FIG. 4-FIG. 11 show some of the benefits this application could provide. Due to the very flexible material InGaAsSb, other properties of the superlattice such as electron effective mass and the like can be trimmed.

[0047] In an embodiment, the InGaAsSb layers have a flexible growth sequence to satisfy certain property requirements. For example, the InGaAsSb layers may include a structure of InAs/In.sub.x-1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1, which can be changed to InAs/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2. In another example, the InGaAsSb layers may include a structure of InAs/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2 with two content combinations and four layers.

[0048] In practice, high quality phase pure InGaAsSb has been got by MBE (FIGS. 12-14). An special designed MBE system was used to get accurate control of As and Sb flux so that the InGaAsSb layer can be graded in even sub monolayer level. The structure illustrated in FIG. 15 has only two monolayers of InGaAsSb and the content was controlled at sub-monolayer level. The structure has only 50 periods but good XRD satellite peak and FWHM value indicating a very high quality of the superlattice structure.

[0049] FIG. 16 shows an InAs/InGaAsSb superlattice in practice level for an infrared detector with 13 ML of InAs and 7 ML InGaAsSb. The content of InGaAsSb was controlled at sub-monolayer level. The strain still needs to be balanced but the XRD still indicates a high quality of the structure. The photoluminescence spectrums taken at 77k in FIG. 17 show two embodiments of the structure that can reach 7 μm-9 μm detection wavelength.

[0050] The absorber can be integrated in a standard PIN detector or a unipolar barrier detector. With enhanced quantum efficiency and longer carrier lifetime of the absorber, the detector can achieve higher performance.

[0051] From what mentioned above, the superlattice detector with multiple InGaAsSb layer may includes a superlattice structure having two parts and interfaces between the two parts in each period. One of the parts is InAs, InGaAs or InAsSb, and the other parts is InGaAsSb. The InGaAsSb parts comprises several layers. The InGaAsSb layers have at least two different content of Indium and/or Arsenic. The above mentioned each layer has one to a few monolayers of InGaAsSb.

[0052] The InGaAsSb part and the InAs, InGaAs or InAsSb part are thin enough (0-20 nm) so that they are coupled effectively to create miniband. The band gap of the miniband of the superlattice depend on the thickness of each part, the Indium and/or Arsenic contents of InGaAsSb and the growth sequence of these different content InGaAsSb layers. The band gap of the miniband also depend on the Indium content in InGaAs part or Arsenic content in the InAsSb part in the case another part beside InGaAsSb to form the superlattice is InGaAs or InAsSb.

[0053] Furthermore, the InGaAsSb part have several layers which have at least two different contents. Each part may have 1-70 monolayers.

[0054] Furthermore, the growth sequence of these layers can be flexible. For example, a embodiment that has InAs/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1 can be changed to InAs/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2/In.sub.x1Ga.sub.1-x1As.sub.y1Sb.sub.1-y1/In.sub.x2Ga.sub.1-x2As.sub.y2Sb.sub.1-y2.

[0055] Furthermore, the interface between the InGaAsSb layer and the InAs, InGaAs or InAsSb layer can be configurated to InSb-like, GaAs-like or mixed to make strain compensation to the whole structure.

[0056] Furthermore, the superlattice absorber can be p-doped, n-doped or partly p-doped and partly n-doped. The absorber then is integrated with other functional layers to make a PIN detector, PIN detector with barrier or a unipolar detector.

[0057] Limited embodiments of this application have been illustrated here, but it should be noticed that the present application is capable of use in various other environments.