A substrate processing method is provided, which includes: a sulfuric acid immersing step of immersing a plurality of substrates in a sulfuric acid-containing liquid within a sulfuric acid vessel; a transporting step of taking out the substrates from the sulfuric acid vessel and transporting the substrates to an ozone gas treatment unit; and an ozone exposing step of exposing the substrates transported to the ozone gas treatment unit to an ozone-containing gas. The ozone gas treatment unit may include a gas treatment chamber which accommodates the substrates. The ozone exposing step may include the step of placing the substrates taken out of the sulfuric acid vessel in a treatment space within the gas treatment chamber to expose the substrates to the ozone-containing gas.

A wafer carrier dry cleaner includes a receiver, a tool and a movable nozzle. The receiver includes a clean room. The clean room includes a port used to load a wafer carrier. The wafer carrier comprises a box and a door closing an opening of the box. The tool is located in the clean room and configured to separate the door from the box. The movable nozzle is located in the clean room. The movable nozzle is configured to purge clean gas towards the box and the door at a first position between the box and the door when the box and the door are separated.

A wafer carrier dry cleaner includes a receiver, a tool and a movable nozzle. The receiver includes a clean room. The clean room includes a port used to load a wafer carrier. The wafer carrier comprises a box and a door closing an opening of the box. The tool is located in the clean room and configured to separate the door from the box. The movable nozzle is located in the clean room. The movable nozzle is configured to purge clean gas towards the box and the door at a first position between the box and the door when the box and the door are separated.

A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.

A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.

A substrate processing system includes: a substrate processing apparatus configured to process a substrate with a processing fluid; and a processing fluid supply apparatus configured to supply the processing fluid to the substrate processing apparatus. The processing fluid supply apparatus includes: a circulation line, a gas supply line, a cooler, a pump, a branch line, a heating unit, and a pressure regulator.

A substrate processing system includes: a substrate processing apparatus configured to process a substrate with a processing fluid; and a processing fluid supply apparatus configured to supply the processing fluid to the substrate processing apparatus. The processing fluid supply apparatus includes: a circulation line, a gas supply line, a cooler, a pump, a branch line, a heating unit, and a pressure regulator.

Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.

By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO.sub.2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.

By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO.sub.2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

A device and method for protecting an optical sensor of a vehicle are disclosed, wherein the sensor is protected from environmental pollutants which may adhere to an optical surface of the sensor if the sensor is exposed to them, and wherein the environmental pollutants are kept away from the sensor by an ultrasonic cleaning of the sensor surface using an ultrasonic field. The ultrasonic field of the ultrasonic cleaning is emitted by a protection device into the air to provide a protection zone around the optical surface of the sensor such that a contact of the optical surface with the environmental pollutants is avoided, wherein the environmental pollutants are moved and/or destroyed in the air away from the sensor if they enter the protection zone), and wherein the protection zone provides a contactless cleaning of the sensor.