A dual-type solder ball placement system is capable of allowing solder balls of the same type or solder balls having two different types to be mounted simultaneously through two ball mounting lines, thereby efficiently mounting the solder balls arranged with various purposes and patterns. Specifically, the dual-type solder ball placement system allows solder balls serving as terminals and core balls serving as supports to be mounted simultaneously through an inline method, thereby preventing a wafer, a unit, a chipset, and the like that become lighter, thinner, shorter, and smaller from being bent.

A method for fabrication includes providing a donor sheet, including a donor substrate, which is transparent in a specified spectral range, a sacrificial layer, which absorbs optical radiation within the specified spectral range and is disposed over the donor substrate, and a donor film, which includes a paste and is disposed over the sacrificial layer. The donor sheet is positioned so that the donor film is in proximity to a target location on an acceptor substrate. A pulsed laser beam impinges on the sacrificial layer with a pulse energy and spot size selected so as to ablate the sacrificial layer, thus causing a viscoelastic jet of the paste to be ejected from the donor film and to deposit, at the target location on the acceptor substrate, a dot having a diameter less than the spot size of the laser beam.

A method for forming a component for a gas turbine engine may include forming a first portion of the component that includes a cast metal or metal alloy, forming a second portion of the component that includes presintered preform defining at least one support structure, positioning the second portion on the first portion to define an assembly such that the first portion and the second portion define at least one cooling channel therebetween, and heating the assembly to join the first portion and the second portion and form the component.

In a film formation step of a brazing method, a metal brush formed by bundling a plurality of metal wires is brought into contact with a film formation target portion of a workpiece. Here, the film formation target portion is a portion that includes a joining target portion and a brazing-material-allowed portion but does not include an avoidance portion. In this state, the film formation target portion and the metal brush are relatively moved to each other. Thus, the metal film is formed on the film formation target portion. In a brazing step, the joining target portions are joined in a state where a brazing material is arranged on the joining target portion and the brazing-material-allowed portion.

Provided a semiconductor chip bonding apparatus including a body, a heater disposed on a lower surface of the body, a collet disposed on a lower surface of the heater, and a head disposed on a lower surface of the collet, the head has a rectangular plate shape, a lower surface and side surfaces of the head are exposed, an upper surface of the head is in contact with the lower surface of the collet, an area of the upper surface of the head is smaller than an area of the lower surface of the collet, the head includes a central section including a recess, and an outer surface constituting a part of the side surfaces of the head, and a peripheral section connected to the recess and disposed on each corners of the head, and a thermal conductivity of the peripheral section is different from that of the central section.

A system for reflowing a semiconductor workpiece including a stage, a first vacuum module and a second vacuum module, and an energy source is provided. The stage includes a base and a protrusion connected to the base, the stage is movable along a height direction of the stage relative to the semiconductor workpiece, the protrusion operably holds and heats the semiconductor workpiece, and the protrusion includes a first portion and a second portion surrounded by and spatially separated from the first portion. The first vacuum module and the second vacuum module respectively coupled to the first portion and the second portion of the protrusion, and the first vacuum module and the second vacuum module are operable to respectively apply a pressure to the first portion and the second portion. The energy source is disposed over the stage to heat the semiconductor workpiece held by the protrusion of the stage.

A method of soldering elements together includes providing a substrate having a metal die attach surface, providing a semiconductor die that is configured as a power semiconductor device and having a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack having a front side metallization and a contaminant protection layer, arranging the semiconductor die on the substrate with a region of solder material between the die attach surface and the rear side metallization, and performing a soldering process that reflows the region of solder material to form a soldered joint between the metal die attach surface and the rear side metallization, wherein the soldering process comprises applying mechanical pressure to the front side metallization.

A flux composition includes an aromatic resin including one benzene ring and one or two hydroxyl (—OH) groups, an activator selected from a group consisting of a dicarboxylic acid and a dicarboxylic anhydride, and a solvent.

A brazing sheet may be used for brazing under an atmosphere of an inert gas without flux. The brazing sheet may include at least three layers. The at least three layers may include a core material, a brazing material layer, and an intermediate layer. The at least three layers may be cladded by an outermost layer of the brazing material layer. The intermediate layer may be disposed on a face of the core material. The core material may be composed of a first aluminum alloy including at least one of (i) 0.20 weight % to 1.0 weight % of Cu, (ii) 0.8 weight % to 1.8 weight % of Mn, and (iii) 0.25 weight % to 1.5 weight % of Mg. The intermediate layer may be composed of a second aluminum alloy including 0.20 weight % or less of each of Si and Fe and 0.10 weight % or less of each of Cu, Mn, and Cr.

A heat exchanger includes: a main body; and a tube sheet that is bonded to the main body with a brazing material and is used to fix the main body to a support by a fixing member. The tube sheet includes: a bonding surface to which the brazing material is applied; a rising portion that rises from the bonding surface; and a through-hole through which the fixing member is passed. The through-hole is opened at the rising portion, penetrates the tube sheet, and has an inner peripheral surface to which the brazing material is not applied. The main body includes heat transfer tubes through which refrigerant flows, and the tube sheet is bonded to surface of the heat transfer tube.