A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.

A method of forming a wavelength detector that includes forming a first transparent material layer having a uniform thickness on a first mirror structure, and forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer. A second transparent material layer is formed having a plurality of different thickness portions atop the active element layer, wherein each thickness portion correlates to at least one of the plurality of nanomaterials. A second mirror structure is formed on the second transparent material layer.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

A purpose of the present disclosure is to provide an optical unit that is capable of effectively sealing one or a plurality of optical devices even without a special material, a special structure, etc. In an optical unit of the present disclosure, the sealing section (50) includes: a circular seal section (51) surrounding one or a plurality of optical devices (40) on a wiring substrate from an in-plane direction of the wiring substrate; and an inside filling section (52) with which inside of the seal section (51) is filled and that seals the one or plurality of optical devices (40). The optical devices (40) are each a light emitting unit, a light receiving device, an image sensor, an X-ray sensor, or a power generating device. The seal section (51) and the inside filling section (52) are each configured of a cured thermosetting resin. The inside filling section (52) has light transmittance that is higher than light transmittance of the seal section (51). The inside filling section (52) has a modulus of elasticity that is smaller than a modulus of elasticity of the seal section (51).

At least some embodiments of the present disclosure relate to a lid for covering an optical device. The lid includes a metal member and a transparent encapsulant. The metal member includes a top surface, a first bottom surface, and a second bottom surface between the top surface and the first bottom surface. The transparent encapsulant is surrounded by the metal member and covers at least a portion of the second bottom surface.

Provided are an atomic layer junction oxide, a method of preparing the atomic layer junction oxide, and a photoelectric conversion device including the atomic layer junction oxide. The atomic layer junction oxide can include an n-type doped atomic layer oxide; an intrinsic atomic layer oxide; a p-type doped atomic layer oxide; and an intrinsic atomic layer oxide.

A cleaving system and method are described. The system can include a holding apparatus to retain a photovoltaic structure at a center section of a cleaving platform. The system can further include a contact apparatus to make contact with the photovoltaic structure and separate it into a plurality of strips. During operation, the system can activate an actuator to move the contact apparatus against the photovoltaic structure, thereby separating the photovoltaic structure into strips.

Reduction of solar wafer LID by exposure to continuous or intermittent High-Intensity full-spectrum Light Radiation, HILR, by an Enhanced Light Source, ELS, producing 3-10 Sols, optionally in the presence of forming gas or/and heating to within the range of from 100 C.-300 C. HILR is provided by ELS modules for stand-alone bulk/continuous processing, or integrated in wafer processing lines in a High-Intensity Light Zone, HILZ, downstream of a wafer firing furnace. A finger drive wafer transport provides continuous shadowless processing speeds of 200-400 inches/minute in the integrated furnace/HILZ. Wafer dwell time in the peak-firing zone is 1-2 seconds. Wafers are immediately cooled from peak firing temperature of 850 C.-1050 C. in a quench zone ahead of the HILZ-ELS modules. Dwell in the HILZ is from about 10 sec to 5 minutes, preferably 10-180 seconds. Intermittent HILR exposure is produced by electronic control, a mask, rotating slotted plate or moving belt.

A solar array with successive rows of photovoltaic modules angled in opposing directions forming peaks and valleys between the rows with the valleys (i.e.: lower sides of the photovoltaic module rows) being mounted close together and the peaks (i.e.: upper sides of the photovoltaic module rows) being mounted far apart to improve system aerodynamics and permit ease of access for installers. Included is a system for connecting the upper sides of the photovoltaic modules to connectors that slide on bars extending between upper and lower mounting bases and for pivot locking the lower sides of the photovoltaic modules to the lower mounting bases.

An improved method of doping a workpiece is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A patterned implant is performed on one surface of the workpiece. A self-aligned masking process is then performed, which is achieved by exploiting the changes in surface properties caused by the patterned implant. The masking process includes applying a coating that preferentially adheres to the previously implanted regions. A blanket implant is then performed, which serves to implant the portions of the workpiece that are not covered by the coating. Thus, the blanket implant is actually a complementary implant, doping the regions that were not implanted by the first patterned implant. The coating is then optionally removed from the workpiece.