An optical sensing device is provided. The optical sensing device includes an optical sensing element and a detection circuit. The optical sensing element senses an incident photon and generates a sensing signal. The detection circuit detects a pulse width of the sensing signal, and generates a reset signal when the pulse width is larger than a threshold value. Thereby, the optical sensing device is reset according to the reset signal and a dynamic range of the optical sensing device under strong ambient light will be further improved.

Solar cells, electrodes of solar cells, and methods of forming thereof are provided in this disclosure. In an implementation, an electrode includes a bus electrode and a collector electrode intersecting with each other, where a width of the collector electrode ranges from 5 m to 30 m. A resistivity of each of the collector electrode and the bus electrode is less than or equal to 310.sup.6 .Math.cm.

A multilayer photoelectric converter includes a first photoelectric converter, and a second photoelectric converter. The first photoelectric converter and the second photoelectric converter are stacked in this order from a side of the multilayer photoelectric converter where light is incident. The first photoelectric converter has a sensitivity characteristic with a sensitivity having a peak at a wavelength 1a. The second photoelectric converter has a sensitivity characteristic with a sensitivity having a peak at a wavelength 2a. For the multilayer photoelectric converter, the relationship 1a<2a is satisfied. The sensitivity of the second photoelectric converter at the wavelength 2a is less than the sensitivity of the first photoelectric converter at the wavelength 1a.

According to an aspect of the present disclosure, an avalanche diode, a detection unit configured to detect an avalanche current generated by avalanche multiplication in the avalanche diode, a switch disposed between the avalanche diode and the detection unit, and a reset unit configured to reset a node between the switch and the detection unit. The reset unit resets the node during a period in which the switch is in an off state.

An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.

Provided is a resin panel which, when applied as a protective cover of an infrared sensor, can inhibit an infrared sensor from being deteriorated in accuracy. A resin panel for an infrared sensor, the resin panel comprising a resin layer and a plastic film, as well as comprising a conductive layer and a pressure-sensitive adhesive layer between the resin layer and the plastic film, and satisfying at least one of the following expressions (1) and (2): 50 mthickness of the pressure-sensitive adhesive layer . . . (1); and 30TY.sup.3 . . . (2); wherein T represents a thickness (unit: m) of the plastic film, and Y represents a Young's modulus (unit: GPa) of the plastic film.

A sensor package structure includes a substrate, a sensor chip and a ring-shaped solder mask frame those are disposed on the substrate, a ring-shaped support disposed on a top side of the annular solder mask frame, and a light permeable member that is disposed on the ring-shaped support. The sensor chip is electrically coupled to the substrate. A top surface of the sensor chip has a sensing region, and the sensing region is spaced apart from an outer lateral side of the sensor chip by a distance less than 300 m. The ring-shaped solder mask frame surrounds and contacts the outer lateral side of the sensor chip. The light permeable member, the ring-shaped support, and the sensor chip jointly define an enclosed space.

Disclosed is a solar cell module. The module includes a solar cell including a plurality of unit battery cells electrically connected to each other via internal connection electrodes; an upper cover disposed on a front face of the solar cell; a light-conversion coating layer coated on an inner face of the upper cover, wherein the light-conversion coating layer includes upconversion nano-particles for absorbing near-infrared rays and emitting light having a wavelength in a visible region; a lower cover disposed on a rear face of the solar cell; a first filling material layer formed between the solar cell and the light-conversion coating layer; and a second filling material layer formed between the solar cell and the lower cover.

The present disclosure discloses a manufacturing method and a manufacturing device for an interconnection piece. The manufacturing method comprises providing a solder strip, and performing forming treatment on the solder strip to obtain a plurality of structural solder strips; and providing a flexible insulating substrate, and compounding the plurality of structural solder strips on the flexible insulating substrate at intervals to obtain the interconnection piece. Each structural solder strip is provided with two soldering portions and a connecting portion located between the two soldering portions, and the connecting portion is respectively connected to the two soldering portions; at least a part of the connecting portion is located on the flexible insulating substrate, and the two soldering portions extend out of the flexible insulating substrate.

Various implementations described herein are directed to determining an order of power devices connected in a serial string to a central power device. The physical order may be stored in a non-volatile computer-readable storage medium.