A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a fin isolation structure formed beside the nanostructures. The structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. The structure also includes a gate electrode layer covering the work function layer. The gate electrode layer has an extending portion surrounded by the work function layer.

A semiconductor structure includes a stack of semiconductor layers disposed over a substrate, a metal gate structure disposed over and interleaved with the stack of semiconductor layers, the metal gate structure including a gate electrode disposed over a gate dielectric layer, a first isolation structure disposed adjacent to a first sidewall of the stack of semiconductor layers, where the gate dielectric layer fills space between the first isolation structure and the first sidewall of the stack of semiconductor layers, and a second isolation structure disposed adjacent to a second sidewall of the stack of semiconductor layers, where the gate electrode fills the space between the second isolation structure and the second sidewall of the stack of semiconductor layers.

In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. The first semiconductor layers, the second semiconductor layer and an upper portion of the fin structure at a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, are etched. A dielectric layer is formed over the etched upper portion of the fin structure. A source/drain epitaxial layer is formed. The source/drain epitaxial layer is connected to ends of the second semiconductor wires, and a bottom of the source/drain epitaxial layer is separated from the fin structure by the dielectric layer.

A first trench having a first aspect ratio and a second trench having a second aspect ratio that is greater than the first trench are provided into a material stack of a semiconductor substrate and a dielectric material. An epitaxial semiconductor material having a different lattice constant than the substrate is then grown within each of the first and second trenches. The semiconductor material which is epitaxially formed in the first trench has an upper semiconductor material portion that is entirely defect free, while the semiconductor material which is epitaxially formed in the second trench has defects that randomly propagate to the topmost surface of the semiconductor material. At least one semiconductor device is then formed on each epitaxially grown semiconductor material. The at least one semiconductor device located on the epitaxially grown semiconductor material formed in the second trench is a physical unclonable function device.

In accordance with an embodiment, a semiconductor component includes a support and a plurality of leads. An insulated metal substrate having a first portion and a second portion bonded to the support. A semiconductor chip comprising a III-N semiconductor material is bonded to the first portion of the insulated metal substrate and a first electrical interconnect is coupled between a drain bond pad the first portion of the insulated metal substrate. A second semiconductor chip is bonded to the first electrical interconnect. A second electrical interconnect coupled between a lead of the plurality of leads and the second semiconductor chip. In accordance with another embodiment, a method of manufacturing a semiconductor component includes coupling a first semiconductor chip to a first electrically conductive layer and coupling a second semiconductor chip to a second electrically conductive layer.

A semiconductor structure includes a semiconductor substrate containing a shallow trench isolation structure that laterally surrounds a transistor active region, at least one line trench vertically extending into the semiconductor substrate, and a source region and a drain region located in the transistor active region. A contoured channel region continuously extends from the source region to the drain region underneath the at least one line trench. A gate dielectric contacts all surfaces of the at least one line trench and extends over an entirety of the contoured channel region. A gate electrode containing at least one fin portion overlies the gate dielectric.

A multi-gate hybrid-channel field-effect transistor (FET) structure of an integrated device like a nanosheet device or a forksheet device comprises a substrate layer, a first layer stack and a second layer stack arranged side by side on the substrate layer, a first and second additional semiconductor channel layer arranged respectively besides the second layer stack, and a dielectric wall arranged on the substrate layer between the first layer stack and the second layer stack. The first and second layer stack each comprise one or more semiconductor channel layers and gate layers stacked alternatingly with respective surfaces parallel to the surface of the substrate layer. Respective surfaces of the first and second additional semiconductor channel layer are parallel to each other and perpendicular to the surface of the substrate layer.

The invention relates to a device comprising a transistor (T1, T2) comprising: a source (42) and a drain (43), a plurality of channels (41a, 41b, 41c) based on a semi-metallic material, a gate-all-around (50) surrounding the channels (41a, 41b, 41c), a gate dielectric layer (30) separating each channel (41a, 41b, 41c) and the gate-all-around (50), source and drain contacts (40S, 40D) based on the semi-metallic material,

Advantageously, the gate-all-around (50) totally surrounds one or more of the channels (41a, 41b, 41c), according to a GAA architecture.

The invention also relates to a method for producing such a device.

The invention relates to a device comprising transistors (T1, T2, T3), each comprising: a channel (41) with the basis of a semiconductive material, a gate-all-around (50), totally surrounding said channel (41), a source (42) and a drain (43) on either side of the channel (41), and source and drain contacts (60S, 60, 60D), a gate dielectric layer (30) separating the channel (41) and the gate-all-around (50), spacers (70) on either side of the gate (50). Advantageously, the gate dielectric layer (30) and the spacers (70) are formed by at least one single and same continuous layer (73) surrounding the gate-all-around (50). The invention also relates to a method for producing such a device.

A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second FET, an integrated circuit (IC), a plurality of bond wires, and a molding encapsulation. The lead frame comprises a first die paddle and a second die paddle. The first FET is flipped and attached to the first die paddle. The second FET is flipped and attached to the second die paddle. A method comprises the steps of providing a lead frame comprising a first die paddle and a second die paddle; applying a first adhesive layer; mounting a first FET and a second FET; applying a second adhesive layer; mounting an IC; applying bonding wires; forming a molding encapsulation; and applying a singulation process so as to form a plurality of semiconductor packages.