An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

An image capturing element according to the present disclosure includes a pixel array formed by a plurality of pixels arranged in an array on a substrate, each of the plurality of pixels including a photoelectric conversion element, a transparent layer formed on the pixel array, and a spectroscopic element array formed by a plurality of spectroscopic elements arranged in an array, and each of the plurality of spectroscopic elements is at a position corresponding to one of the plurality of spectroscopic elements inside or on the transparent layer. Each of the plurality of spectroscopic elements includes a plurality of microstructures formed from a material having a refractive index higher than a refractive index of the transparent layer. The plurality of microstructures have a microstructure pattern. Each of the plurality of spectroscopic elements separates incident light into deflected light beams having different propagation directions according to the wavelength.

The present technology relates to an imaging element that can increase the degree of freedom of element arrangement. A photoelectric conversion unit, a through trench penetrating a semiconductor substrate in a depth direction and formed between pixels each including the photoelectric conversion unit, and a PN junction region in a side wall of the trench are included, and the through trench has an opening portion, and a P-type region is formed in the opening portion. A photoelectric conversion unit, a holding unit, a through trench formed between the photoelectric conversion unit and the holding unit, and a PN junction region in a side wall of the through trench are included, and the through trench has an opening portion and a readout gate for reading the charge from the photoelectric conversion unit is formed in the opening portion. The present technology can be applied to, for example, an imaging element.

An intermediate connection member includes a first insulating substrate portion, a second insulating substrate portion, an insulating layer portion provided between the first insulating substrate portion and the second insulating substrate portion and formed from a different material from the first insulating substrate portion and the second insulating substrate portion, a plurality of first wiring portions provided between the first insulating substrate portion and the insulating layer portion so as to extend in a first direction such that both end portions of the plurality of first wiring portions in the first direction are exposed to an outside, and a plurality of second wiring portions provided between the second insulating substrate portion and the insulating layer portion so as to extend in the first direction such that both end portions of the plurality of second wiring portions in the first direction are exposed to the outside.

An apparatus includes a plurality of pixels arranged in a substrate including a first surface provided with a transistor and a second surface opposed to the first surface, and a light shielding portion. The plurality of pixels includes first pixels shielded from light, and second pixels. Each of the plurality of pixels includes a first area of a first conductive type. Each of the first pixels includes a second area. Each of the second pixels includes a third area between the second surface and the first area, and includes a fourth area of a second conductive type between the first area and the first surface. In a cross-section along a first line, an impurity concentration of the first conductive type in the second area is higher than an impurity concentration of the first conductive type in the third area.

A method of manufacturing a transistor structure includes forming a plurality of trenches in a substrate, lining the plurality of trenches with a dielectric material, forming first and second substrate regions at opposite sides of the plurality of trenches, and filling the plurality of trenches with a conductive material. The plurality of trenches includes first and second trenches aligned between the first and second substrate regions, and filling the plurality of trenches with the conductive material includes the conductive material extending continuously between the first and second trenches.

The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

An image sensor including color filter groups and microlenses is provided. The color filter groups may include first, second and third color filter groups. The first color filter group includes a first first wavelength band filter and a second first wavelength band filter. The third color filter group includes a first third wavelength band filter. A first microlens on the first first wavelength band filter has a different size than a second microlens on the second first wavelength band filter. A diameter of the first microlens on the first first wavelength band filter is larger than a diameter of a third microlens on the first third wavelength band filter. The microlenses overlap at least four of the color filters.

Disclosed is an image sensor in which at least one pixel group including a plurality of pixels is arranged in a matrix form. The at least one pixel group includes at least one photoelectric conversion device, at least one floating diffusion area to which a charge of the photoelectric conversion device is transferred, at least one reset transistor that is connected to the floating diffusion area and that resets the floating diffusion area to a pixel voltage, a source follower transistor that is connected to the floating diffusion area and that outputs a pixel signal in response to a charge of the floating diffusion area, and a selection transistor that is connected to the source follower transistor and that outputs the pixel signal to an output node. A gate of the source follower transistor and the floating diffusion area are connected by a first connection line that integrally extends from the gate of the source follower transistor to the floating diffusion area as a single, unseparated body, and the first connection line makes contact with the gate of the source follower transistor and the floating diffusion area.

In an image sensor, if a pixel for focusing has a structure having a light-shielding layer for performing pupil division, between the micro lens and the photoelectric conversion unit, the pixel may be configured such that the focal position of the micro lens is positioned further on the micro lens side than the light-shielding layer, and the distance from the focal position of the micro lens to the light-shielding layer is greater than 0 and less than nF, where n is the refractive index at the focal position of the micro lens, F is the aperture value of the micro lens, and is the diffraction limit of the micro lens. This enables variation in the pupil intensity distribution of the pixel for focusing due to positional production tolerance of components to be suppressed.