A vertical solid state device comprising: a connection pad; and side walls comprising a metal-insulator-semiconductor (MIS) structure; wherein a gate of the MIS structure is shorted to at least one contact of the vertical solid state device and a threshold voltage (VT) of the MIS structure is adjusted to increase the efficiency of the device.

An optoelectronic device including an optoelectronic circuit including light-emitting diodes, thin-film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes, and the transistors stack further including conductive elements, between and through the insulating layers, the conductive elements connecting at least some of the transistors to the light-emitting diodes The device further includes a support having a surface, the support being flexible and/or the surface being curved and non-planar, the optoelectronic circuit being connected to the surface on the side of the thin-film transistors.

An optoelectronic device including an optoelectronic circuit including light-emitting diodes, thin-film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes, and the transistors stack further including conductive elements, between and through the insulating layers, the conductive elements connecting at least some of the transistors to the light-emitting diodes The device further includes a support having a surface, the support being flexible and/or the surface being curved and non-planar, the optoelectronic circuit being connected to the surface on the side of the thin-film transistors.

A display device in accordance with one or more embodiments may include: a substrate including a display area including a plurality of pixel areas, each of the plurality of pixel areas including an emission area, and a non-display area at at least one side of the display area; and a pixel in each of the plurality of pixel areas. The pixel may include: a first electrode and a second electrode spaced from each other on the substrate; a plurality of light emitting elements connected between the first and the second electrodes; and an optical pattern on the plurality of light emitting elements and overlapping at least some of the plurality of light emitting elements. The optical pattern is configured to extract light emitted from the plurality of light emitting elements.

An LED (e.g., a UV-LED) structure includes a substrate, a first cathode layer, a second cathode layer, a light emitting layer, an anode layer, an anode contact, and a cathode contact. The first cathode layer has a first aluminum composition. The second cathode layer is disposed on top of the first cathode layer and has a second aluminum composition greater than the first aluminum composition. A two-dimensional electron gas (2DEG) layer is formed at an interface between the first cathode layer and the second cathode layer during operation of the LED structure.

An optoelectronic device comprises a gapped graphene system (GGS) a top gate electrode, a bottom gate electrode and a controller configured for applying a voltage bias between the gate electrodes to effect a bandgap in the GGS, wherein the bandgap is selected to allow the GGS to receive or emit light having a terahertz frequency.

Disclosed herein is a semiconductor light emitting device including a semiconductor light emitting element and a conductive support component that supports the semiconductor light emitting element and that includes an electrically-conductive part and an insulating part. The electrically-conductive part includes a first electrically-conductive part and a second electrically-conductive part. The insulating part has an insulating main surface and an insulating back surface. The first electrically-conductive part includes a first main surface part exposed from the insulating main surface. The second electrically-conductive part includes a second back surface part exposed from the insulating back surface. The first main surface part includes a first main surface base part on which the semiconductor light emitting element is mounted and a first main surface extending part extending from the first main surface base part. The first main surface extending part overlaps with the second back surface part as viewed in the thickness direction.

Disclosed herein is a semiconductor light emitting device including a semiconductor light emitting element and a conductive support component that supports the semiconductor light emitting element and that includes an electrically-conductive part and an insulating part. The electrically-conductive part includes a first electrically-conductive part and a second electrically-conductive part. The insulating part has an insulating main surface and an insulating back surface. The first electrically-conductive part includes a first main surface part exposed from the insulating main surface. The second electrically-conductive part includes a second back surface part exposed from the insulating back surface. The first main surface part includes a first main surface base part on which the semiconductor light emitting element is mounted and a first main surface extending part extending from the first main surface base part. The first main surface extending part overlaps with the second back surface part as viewed in the thickness direction.

Provided are a semiconductor light source and a driver circuit thereof. The semiconductor light source includes an active layer, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, and a third electrode. The first semiconductor layer and the second semiconductor layer are located on two opposite sides of the active layer. The first electrode is in ohmic contact with the first semiconductor layer. The third electrode is in ohmic contact with the second semiconductor layer. A first dielectric layer is disposed between the first electrode and the second electrode. The first semiconductor layer is a p-type semiconductor layer, and the second semiconductor layer is an n-type semiconductor layer. Alternatively, the first semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer is a p-type semiconductor layer.

The invention relates to a component with a main part and a contact structure. The main part has an active zone which is designed to generate electromagnetic radiation at least in some regions during the operation of the component. The contact structure has a plurality of individually actuatable segments. The component has a connection surface and a lateral surface running transversely to the connection surface, and the lateral surface is designed as a radiation passage surface of the component. The connection surface is designed to be structured, wherein the connection surface is defined by common internal boundary surfaces between the main part and the contact structure, and each segment has a local common boundary surface with the main part and is designed for a pixelated current impression into the main part. The invention additionally relates to a method for operating such a component.