A polishing composition capable of suppressing surface defects and reducing haze is provided. The polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; a polyalcohol; and an alkali compound. Preferably, the polishing composition further includes a non-ionic surfactant.

A polishing composition capable of suppressing surface defects and reducing haze is provided. The polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; a polyalcohol; and an alkali compound. Preferably, the polishing composition further includes a non-ionic surfactant.

The present invention is a polishing agent for a synthetic quartz glass substrate, containing polishing abrasive grains, a polishing accelerator, and water, wherein the polishing abrasive grains are wet ceria particles, and the polishing accelerator is a polyphosphoric acid, a salt thereof, a metaphosphoric acid, a salt thereof, a tungstic acid, or a salt thereof. There can be provided a polishing agent for a synthetic quartz glass substrate that has high polishing rate and can sufficiently reduce generation of defects due to polishing.

The present invention is a polishing agent for a synthetic quartz glass substrate, containing polishing abrasive grains, a polishing accelerator, and water, wherein the polishing abrasive grains are wet ceria particles, and the polishing accelerator is a polyphosphoric acid, a salt thereof, a metaphosphoric acid, a salt thereof, a tungstic acid, or a salt thereof. There can be provided a polishing agent for a synthetic quartz glass substrate that has high polishing rate and can sufficiently reduce generation of defects due to polishing.

Provided is a method of polishing a substrate in which a surface with high flatness and few defects can be realized with high efficiency. The method of polishing a substrate provided according to the present invention includes a plurality of stock polishing sub-steps that are performed by supplying a first polishing solution, a second polishing solution, and a third polishing solution in this order in a stock polishing step of a substrate. The relationships between a content. COM.sub.P1 of aa water-soluble polymer P.sub.1 contained in the first polish ng solution, a content COM.sub.P2 of a water-soluble polymer P.sub.2 contained in the second polishing solution, and a content COM.sub.P3 of a water-soluble polymer P.sub.3 contained in the third polishing solution satisfy COM.sub.P1<COM.sub.P2<COM.sub.P3, and any one of the following conditions is satisfied (1) the average primary particle diameter D.sub.A3 of abrasive A.sub.3 contained in the third polishing solution is smaller than the average primary particle diameter D.sub.A1 of abrasive A.sub.1 contained in the first polishing solution and the average primary particle diameter D.sub.A2 of abrasive A.sub.2 contained in the second polishing solution; and (2) the third polishing solution does not contain abrasive A.sub.3.

Abrasives, a polishing composition, and a polishing method that can reduce undulation of an outer surface of a resin coating by polishing with reduced occurrence of polishing flaws. The polishing composition includes abrasives of aluminium oxide particles having a specific surface area of 5 m.sup.2/g or more and 50 m.sup.2/g or less and an average secondary particle diameter of 0.05 m or more and 4.8 m or less. This polishing composition can be used for polishing an outer surface of the resin coating.

Abrasives, a polishing composition, and a polishing method that can reduce undulation of an outer surface of a resin coating by polishing with reduced occurrence of polishing flaws. The polishing composition includes abrasives of aluminium oxide particles having a specific surface area of 5 m.sup.2/g or more and 50 m.sup.2/g or less and an average secondary particle diameter of 0.05 m or more and 4.8 m or less. This polishing composition can be used for polishing an outer surface of the resin coating.

Embodiments relate to a polishing pad, which comprises a window having a hardness similar to that of its polishing layer. Since the polishing pad comprises a window having a hardness and a polishing rate similar to those of its polishing layer, it can produce an effect of preventing scratches on a wafer during a CMP process. In addition, the polishing layer and the window of the polishing pad have a similar rate of change in hardness with respect to temperature, so that they can maintain a similar hardness despite a change in temperature during the CMP process.

A polishing method for polishing by sliding a semiconductor silicon wafer, held by a polishing head, against a polishing pad attached to a turn table while supplying a polishing agent, wherein the semiconductor silicon wafer is subjected to primary polishing, secondary polishing, and final polishing in turn, the secondary polishing comprises polishing by an alkaline based polishing agent which includes free abrasive grains and does not include a water-soluble polymer agent, and subsequent rinse polishing by a polishing agent which includes a water-soluble polymer agent and the rinse polishing includes two stages of polishing, wherein, after performing a first stage of the rinse polishing while supplying a polishing agent which includes a water-soluble polymer agent, a second stage of the rinse polishing is performed while supplying a switched polishing agent whose water-soluble polymer agent has an average molecular weight larger than the polishing agent of the first stage.

A foaming thermoplastic polyurethane resin is a reaction product of a polyisocyanate component containing a bis(isocyanatomethyl)cyclohexane and a polyol component. In a peak of chromatogram obtained by measurement of the foaming thermoplastic polyurethane resin with gel permeation chromatography, the area of a high molecular weight component having a weight average molecular weight of 400,000 or more with respect to the total area of the peak is 25% or more and 60% or less.