In one aspect, the present disclosure provides cerium oxide'abrasive grains that can improve the polishing rate.

One aspect of the present disclosure relates to cerium oxide abrasive grains for use in an abrasive, in which an amount of water production in a temperature range of 300 C. or less measured using temperature-programmed reaction is 8 mmol/m.sup.2 or more per unit surface area of the cerium oxide abrasive grains.

A slurry comprises abrasive grains, a glycol, and water, wherein an average particle diameter of the abrasive grains is 120 nm or smaller, and a pH is 4.0 or higher and lower than 8.0. A polishing method comprises a step of polishing a metal by use of the slurry.

A method for manufacturing a wafer product, including the steps of: chamfering a circumferential edge portion of a wafer; lapping or double-side grinding main surfaces thereof; etching; mirror-polishing the main surface; and mirror-polishing the chamfered portion. The chamfered portion has a cross-sectional shape including: a first inclined portion continuous from the first main surface; a first arc portion continuous from the first inclined portion and having a radius of curvature; a second inclined portion continuous from the second main surface; a second arc portion continuous from the second inclined portion and having a radius of curvature; and an end portion connecting the first arc portion to the second arc portion. This provides a method for manufacturing a wafer by which a variation in a chamfered cross-sectional shape in a circumferential direction caused by etching can be suppressed.

Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.

Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.

Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

To planarize a substrate having irregularities on its surface. Provided is a method of chemical mechanical polishing of a substrate. The method includes the step of polishing the substrate using a processing solution, and the step of changing concentration of an effective component in the processing solution, which contributes to the polishing of the substrate.

In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.

Provided is a polishing composition that enables polishing a resin object to be polished at a high polishing removal rate and enables polishing the surface of a resin object to be polished into a flat and smooth surface. The polishing composition includes abrasives, a surfactant, and water, and the surfactant includes an acetylene compound having a carbon-carbon triple bond and represented by Chemical Formula (1). In Chemical Formula (1), R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 or more and 20 or less carbon atoms; R.sup.5 and R.sup.6 are each independently a substituted or unsubstituted alkylene group having 1 or more and 5 or less carbon atoms; m is an integer of 1 or more; n is an integer of 0 or more; and m+n is 50 or less. The polishing composition is used to polish a resin object to be polished.

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The present invention relates to a surface property measuring apparatus for a polishing pad used for polishing a substrate, such as a semiconductor wafer, a surface property measuring method for a polishing pad, and a surface property judging mehod for a polishing pad. The surface property measuring apparatus (30) includes: a light-emitting structure (32) configured to irradiate the polishing pad (2) with light from a plurality of directions as viewed from a polishing surface (2a) of the polishing pad (2); and a light-receiving structure (32) configured to receive reflected light traveling in a plurality of directions from the surface of the polishing pad (2).