An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential E.sub.A of cobalt and the corrosion potential E.sub.B of the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference E.sub.AE.sub.B between the corrosion potential E.sub.A and the corrosion potential E.sub.B is 0300 mV.

An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential E.sub.A of cobalt and the corrosion potential E.sub.B of the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference E.sub.AE.sub.B between the corrosion potential E.sub.A and the corrosion potential E.sub.B is 0300 mV.

To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A=(D90D50)/(D50D10) and the polishing composition is used for final polishing in silicon wafer polishing.

To perform polishing while reducing an LPD and preventing contamination with metals, particularly nickel and copper, in final polishing of a silicon wafer. A polishing composition contains abrasives, a water-soluble polymer, a basic compound, a chelating agent, and water, in which, when the particle diameter equivalent to a particle diameter at a cumulative volume of 10% from a smaller particle diameter side is defined as D10, the particle diameter equivalent to a particle diameter at a cumulative volume of 50% from the smaller particle diameter side is defined as D50, and the particle diameter equivalent to a particle diameter at a cumulative volume of 90% from the smaller particle diameter side is defined as D90 in a particle size distribution of particles present in the polishing composition, a value of a coarse particle frequency parameter A defined by (Expression 1) illustrated below is less than 1.7, A=(D90D50)/(D50D10) and the polishing composition is used for final polishing in silicon wafer polishing.

A polishing agent for a synthetic quartz glass substrate, containing polishing particles and water includes ceria particles as base particles, and composite oxide particles of cerium and at least one rare earth element selected from trivalent rare earth elements other than cerium are supported on surfaces of the base particles. This provides a polishing agent for a synthetic quartz glass substrate, the polishing agent having high polishing rate and being capable of sufficiently reducing generation of defects due to polishing.

The present invention is a CMP polishing agent, including polishing particles, a protective film-forming agent, and water, wherein the protective film-forming agent is a copolymer of styrene and acrylonitrile, and an average molecular weight of the copolymer is 500 or more and 20000 or less. This provides a polishing agent which can polish an insulation film with few polishing scratches and has high polishing selectivity of an insulation film to a polishing stop film in a CMP step, a method for manufacturing the polishing agent, and a method for polishing a substrate by using the polishing agent.

The present invention is a CMP polishing agent, including polishing particles, a protective film-forming agent, and water, wherein the protective film-forming agent is a copolymer of styrene and acrylonitrile, and an average molecular weight of the copolymer is 500 or more and 20000 or less. This provides a polishing agent which can polish an insulation film with few polishing scratches and has high polishing selectivity of an insulation film to a polishing stop film in a CMP step, a method for manufacturing the polishing agent, and a method for polishing a substrate by using the polishing agent.

There is provided a method for producing a resin member used in a production process of electronic devices capable of suppressing the adhesion of adhering substances to the surface over a long period of term. The method for producing a resin member used in a production process of electronic devices includes: a processing step of applying abrasive processing to the surface of a raw member to set a surface roughness Ra to 100 nm or less and a contact angle of pure water with respect to the surface to 70? or more and less than 110?.

When a polishing liquid is supplied while moving a polishing liquid supply head including a plurality of polishing liquid supply ports above a polishing pad, a uniformity of a polishing liquid supply range is improved. A polishing apparatus 1 includes a polishing table for supporting a polishing pad 100, a polishing head 30 for holding an object, and a polishing liquid supply device 40 for supplying a polishing liquid between the polishing pad 100 and the object. The polishing liquid supply device 40 includes a polishing liquid supply head 41 including a plurality of polishing liquid supply ports 414, a link mechanism 60 configured to move the polishing liquid supply head 41 along a polishing surface of the polishing pad 100, and a drive mechanism 90 configured to drive the link mechanism 60. The drive mechanism 90 is configured to drive the link mechanism 60 such that the plurality of polishing liquid supply ports 414 are arranged along a radial direction of the polishing pad 100 in a first state 450 where the polishing liquid supply head 41 is disposed to be opposed to a center side of the polishing pad 100 and the plurality of polishing liquid supply ports 414 are arranged along a radial direction of the polishing pad 100 in a second state 460 where the polishing liquid supply head 41 is disposed to be opposed to an outer edge side of the polishing pad 100 compared with the first state 450.

The present invention provides a means for further improving a polishing speed in a polishing composition.

The polishing composition includes: an abrasive grain; hydrogen peroxide; and water, wherein the abrasive grain has an average secondary particle size of 20 nm or more to 150 nm or less, a molar concentration M (mmol/Kg) of the hydrogen peroxide and a total surface area of the abrasive grain satisfy a relationship of Formula 1 below and Formula 2 below, and a pH is 10 or more to 14 or less.

M<Log(S)100750(Formula 1)

M>0(Formula 2) (wherein S represents a total surface area (m.sup.2) of abrasive grains present in 1 Kg of the polishing composition, and Log(S) represents a natural logarithm of S).