The present invention provides a liquid supplying device that can determine whether a CLC can be used appropriately. A liquid supplying device for supplying a liquid from a liquid source to a cleaning device is provided. The liquid supplying device includes a flow rate control device that measures a flow rate of a liquid from the liquid source and controls the flow rate based on the measured value, an IN-side pressure gauge provided between the liquid source and the flow rate control device and an OUT-side pressure gauge provided between the flow rate control device and the cleaning device.

A substrate processing method which can clean a peripheral portion of a substrate after polishing and can check the cleaning effect of the peripheral portion of the substrate is disclosed. The substrate processing method includes polishing a peripheral portion of the substrate by pressing a polishing tape having abrasive grains against the peripheral portion of the substrate with a first head, cleaning the peripheral portion of the substrate by supplying a cleaning liquid to the peripheral portion of the substrate after polishing, bringing a tape having no abrasive grains into contact with the peripheral portion of the substrate after cleaning by a second head, applying light to the tape and receiving reflected light from the tape by a sensor, and judging that the peripheral portion of the substrate is contaminated when an intensity of the received reflected light is lower than a predetermined value.

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear etch-pit groups observed in the main surface is equal to or less than the diameter of the substrate.

An aspect of the present invention is a polishing liquid containing abrasive grains, a copolymer, and a liquid medium, in which the copolymer has a structure unit derived from at least one styrene compound selected from the group consisting of styrene and a styrene derivative and a structure unit derived from acrylic acid, a content of the copolymer is more than 0.01% by mass and 0.2% by mass or less based on the total amount of the polishing liquid, and a pH of the polishing liquid is more than 4.5.

The present invention provides a polishing liquid which reduces the occurrence of dishing and erosion on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, and includes a colloidal silica, an organic acid, a passivation film forming agent, an anionic surfactant; hydrogen peroxide; potassium; and sodium, in which a value of a difference obtained by subtracting the ClogP value of the passivation film forming agent from the ClogP value of the anionic surfactant is more than 2.00 and less than 8.00, a mass ratio of a content of potassium to a content of sodium is 1?10.sup.6 to 1?10.sup.9, and the pH is 8.0 to 10.5.

A method of training a neural network includes obtaining two ground truth thickness profiles a test substrate, obtaining two thickness profiles for the test substrate as measured by an in-situ monitoring system while the test substrate is on polishing pads of different thicknesses, generating an estimated thickness profile for another thickness value that is between the two thickness values by interpolating between the two profiles, and training a neural network using the estimated thickness profile.

In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.

A method for conditioning a polishing pad, which is configured to polish a wafer and attached to a rotatable discoid turntable, by using a conditioning head, the method being characterized by: moving the conditioning head in a radial direction of the turntable to perform the conditioning while rotating the polishing pad attached to the turntable by rotation of the turntable; and controlling a rotational speed of the turntable and a moving speed of the conditioning head in the radial direction of the turntable in correspondence with a distance of the conditioning head from a center of the turntable. Consequently, the method for conditioning a polishing pad which enables appropriately conditioning an entire polishing surface of the polishing pad can be provided.

The present invention provides a means allowing achievement of sufficient planarization of the surface of an object to be polished containing two or more types of materials.

The present invention is a polishing method for polishing an object to be polished containing two or more types of materials by using a polishing composition, the polishing method including equalization of the surface zeta potential of the object to be polished.

The purpose of the present invention is to provide a polishing composition which can polish an object to be polished containing oxygen atoms and silicon atoms at high polishing speed, and can reduce generation of scratches on a surface of the object to be polished.

A polishing composition used for polishing an object to be polished containing oxygen atoms and silicon atoms, the polishing composition including: abrasive grains A having an average primary particle size of 3 nm or more and 8 nm or less; abrasive grains B having an average primary particle size of more than 8 nm; and a dispersing medium, wherein a content of the abrasive grains B in the polishing composition is larger than a content of the abrasive grains A in the polishing composition, average silanol group density of the abrasive grains A and the abrasive grains B is 2.0 nm.sup.2 or less, and an aspect ratio of the abrasive grains B is more than 1.3 and 2.0 or less.